2465 results about "Vapor pressure" patented technology

Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (700, 700′, 700″) and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source (722) within a source space comprising: sensing the accumulation of the chemical on a sensing surface (711); and controlling the temperature of the chemical source depending on said sensed accumulation.

Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low etch selectivity to silicon nitride is achieved in a condensation regime where the partial pressure of the etchant is higher than its vapor pressure. By controlling partial pressure of the etchant, very high etch selectivity to silicon nitride may be achieved.

Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation.

An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.

An improved ALD system usable for low vapor pressure liquid and sold precursors. The ALD system includes a precursor container and inert gas delivery elements configured to increase precursor vapor pressure within a precursor container by injecting an inert gas pulse into the precursor container while a precursor pulse is being removed to the reaction chamber. A controllable inert gas flow valve and a flow restrictor are disposed along an inert gas input line leading into the precursor container below its fill level. A vapor space is provided above the fill level. An ALD pulse valve is disposed along a precursor vapor line extending between the vapor space and the reaction chamber. Both valves are pulsed simultaneously to synchronously remove precursor vapor from the vapor space and inject inert gas into the precursor container below the fill level.

An implant for use in a human or animal body can include a flexible housing with an outer wall and having a chamber therein. The implant can have at least one high vapor pressure medium within the chamber. The at one high vapor pressure medium can have a combined vapor pressure equal to or greater than about the average value of the hydrostatic pressure of the implantation site plus the skin tension of the housing minus the gas tension of the dissolved gasses present at the implantation site.

High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about -4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and / or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

Various techniques are disclosed for improving airtight two-phase heat-transfer systems employing a fluid to transfer heat from a heat source to a heat sink while circulating around a fluid circuit, the maximum temperature of the heat sink not exceeding the maximum temperature of the heat source. The properties of those improved systems include (a) maintaining, while the systems are inactive, their internal pressure at a pressure above the saturated-vapor pressure of their heat-transfer fluid; and (b) cooling their internal evaporator surfaces with liquid jets. FIG. 43 illustrates the particular case where a heat-transfer system of the invention is used to cool a piston engine (500) by rejecting, with a condenser (508), heat to the ambient air; and where the system includes a heat-transfer fluid pump (10) and means (401-407) for achieving the former property.

A capillary wick for use in capillary evaporators has properties that prevent nucleation inside the body of the wick, resulting in suppression of back-conduction of heat from vapor channels to the liquid reservoir. Use of a central liquid flow channel in the wick is eliminated, and pore size in the wick is chosen to maximize available pressure for fluid pumping, while preventing nucleation in the wick body. The wick is embodied with different geometries, including cylindrical and flat. A flat capillary evaporator has substantially planar heat input surfaces for convenient mating to planar heat sources. The flat capillary evaporator is capable of being used with working fluids having high vapor pressures (i.e., greater that 10 psia). To contain the pressure of the vaporized working fluid, the opposed planar plates of the evaporator are brazed or sintered to opposing sides of a metal wick. Additionally, a terrestrial loop heat pipe and a loop heat pipe having overall flat geometry are disclosed.

The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: (a) heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; (b) mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and (c) heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor, wherein, in the step (c), in order for liquefied selenium not to be condensed on the specimen which is loaded at the room temperature and is not yet heated, the temperature of the element selenium and the specimen loaded in the chamber are individually controlled, so that the selenium vapor pressure of an inner space of the chamber does not exceed a saturation vapor pressure corresponding to the temperature of the specimen.

The present invention relates to an apparatus and method for rapid flash-like volatilization of high and low vapor pressure components from liquid or solid emanators which is in contact with a point or localized heat source. Vaporization is promoted by a geometrically small electrically resistive heating element with variable activation for pulsed or cyclic heating of an emanating surface containing the volatile components. The apparatus is primarily directed towards the treatment of residential air for fragrancing, odor elimination, treatment of insects or pests, air sanitization, air and surface antibacterial or antimicrobial treatment, or other ambient air or surface modification by way of gas or vapor distribution.

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and / or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

A rechargeable lithium cell comprising a cathode having a cathode active material, an anode having an anode active material, a porous separator electronically separating the anode and the cathode, a non-flammable quasi-solid electrolyte in contact with the cathode and the anode, wherein the electrolyte contains a lithium salt dissolved in a first organic liquid solvent with a concentration sufficiently high so that the electrolyte exhibits a vapor pressure less than 0.01 kPa when measured at 20° C., a flash point at least 20 degrees Celsius higher than the flash point of the first organic liquid solvent alone, a flash point higher than 150° C., or no flash point. This battery cell is non-flammable and safe, has a long cycle life, high capacity, and high energy density.

A water transport assembly, is provided including a housing having a first chamber therein, which is accessible through an opening in the housing. The housing additionally includes a sample inlet port and a sample outlet port, both of which are in fluid communication with the first chamber. A flat ion exchange membrane is attached to the housing in a plane over the opening in the housing, to seal the opening in a vapor tight seal. Water will pass through the membrane based upon the vapor pressure on each side of the membrane, to either dry or humidify sample passing through the first chamber. When the flat ion exchange membrane is a flat, thin ion exchange membrane it is preferable that the thin ion exchange membrane have a thickness of between about 0.1 and about 3.0 mils.

A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

A method of manufacturing a dye-sensitized photoelectric conversion device is provided by which a dye-sensitized photoelectric conversion device being excellent in strength and durability and free of any projection, as a result of the absence of need for an end seal, can be fabricated through simple manufacturing steps. In manufacturing a dye-sensitized photoelectric conversion device which has an electrolyte between a dye-sensitized semiconductor layer and a counter electrode and which also has a first armor member provided on the outside of the dye-sensitized semiconductor layer and a second armor member provided on the outside of the counter electrode, a sealing material and the electrolyte are formed at predetermined locations of one or both of the first armor member and the second armor member, thereafter the first armor member and the second armor member, with the sealing material and the electrolyte sandwiched therebetween, are adhered to each other with the sealing material under a gas pressure of not higher than the atmospheric air pressure and not lower than the vapor pressure of the electrolyte.

Disclosed is a structure made of a trench patterned substrate having a pre-determined trench period and a pre-determined mesa to trench width ratio, and a block copolymer on top of the trench patterned substrate. The block copolymer has at least an organic block and a silicon-containing block, wherein the block copolymer can have either perpendicular or parallel cylinders. The structure is annealed under a pre-determined vapor pressure for a predetermined annealing time period, wherein the pre-determined trench period, the pre-determined mesa to trench width ratio, the predetermined vapor pressure and the predetermined annealing time period are chosen such that cylinders formed in the block copolymer are either perpendicular or parallel with respect to the trench-patterned substrate. A method is also described to form the above-mentioned structure.

A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

The use of high flash point low vapor pressure compositions for removal of crude oil deposits from tar sands by injection of products in situ or by removal of tar sands and batch processing. Processing equipment is designed for use on these compositions to maximize recovery of deposits and producing clean sand clays or other base materials for re-deposition without further treatment. The compositions consist of solvent based cleaners, solvent emulsion cleaners, and / or water based alkaline cleaners.

This pressure regulator is specifically designed to operate with a portable compressed gas cartridge thus reducing the high vapor pressure found in compressed gas cartridges down to a substantially consistent outlet pressure. Due to the nature of the crowded regulator art, the soon to be embodied pressure regulator has been specifically embodied for use in the portable compressed gas cartridge harnessing art and this specific use is carried into the claims. Exemplified in the pressure regulator embodiments is a reduced amount of components over existing designs. Additionally, safety and reliability features have been integrated into the design and will shortly be taught in the following paragraphs. A burp-off feature in all embodiments will be exemplified that vents back-pressure spikes as well as a method of adjusting the burp-off back-pressure spikes independent of regulated pressure in some embodiments.

A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and / or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and / or DUV light and / or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

A rechargeable lithium-selenium cell comprising a cathode having a cathode active material selected from Se or SexSy (x / y ratio=0.01 to 100), an anode having an anode active material, a porous separator electronically separating the anode and the cathode, a non-flammable quasi-solid electrolyte in contact with the cathode and the anode, wherein the electrolyte contains a lithium salt dissolved in a first organic liquid solvent with a lithium salt concentration sufficiently high (at least 2.0 M, more preferably >3.0 M) so that the electrolyte exhibits a vapor pressure less than 0.01 kPa when measured at 20° C., a flash point at least 20 degrees Celsius higher than the flash point of the first organic liquid solvent alone, a flash point higher than 150° C., or no flash point. This battery cell is non-flammable and safe, has a long cycle life, high capacity, and high energy density.

A process for crystallizing a polyester polymer by introducing a molten polyester polymer, such as a polyethylene terephthalate polymer, into a liquid medium at a liquid medium temperature greater than the Tg of the polyester polymer, such as at a temperature ranging from 100° C. to 190° C., and allowing the molten polyester polymer to reside in the liquid medium for a time sufficient to crystallize the polymer under a pressure equal to or greater than the vapor pressure of the liquid medium. A process flow, underwater cutting process, crystallization in a pipe, and a separator are also described.

The invention provides a lube oil which exhibits low vapor pressure despite having low viscosity, is non-flammable, exhibits excellent heat resistance, has tribological characteristics equivalent to those of conventional hydrocarbon-based lube oils, and can be used for a long time under very severe conditions such as high temperature and vacuum. The lube oil contains, as a base oil, an ionic liquid formed of a cation and an anion and having an ion concentration of 1 mol / dm3 or more.

The apparatus is a hybrid cooler which includes one loop within which a heated evaporator forms vapor that moves to a condenser because of the vapor pressure which also drives the liquid condensate from the condenser to a liquid reservoir. A second loop is powered by a mechanical pump that supplies liquid from the reservoir to the evaporator and the second loop also returns excess liquid not vaporized to the reservoir. An optional reservoir cooler can be used to assure that the reservoir temperature and vapor pressure are always lower that the temperatures and pressures of the evaporator and condenser.

The invention teaches a practical method of recovering CO2 from a mixture of gases, and sequestering the captured CO2 from the atmosphere for geologic time as calcium carbonate and provides a CO2 scrubber for carbon capture and sequestration. CO2 from the production of calcium oxide is geologically sequestered. A calcium hydroxide solution is produced from the environmentally responsibly-produced calcium oxide. The CO2 scrubber incorporates an aqueous froth to maximize liquid-to-gas surface area and time-of-contact between gaseous CO2 and the calcium hydroxide solution. The CO2 scrubber decreases the temperature of the liquid and the mixed gases, increases ambient pressure on the bubbles and vapor pressure inside the bubbles, diffuses the gas through intercellular walls from relative smaller bubbles with relative high vapor pressure into relative larger bubbles with relative low vapor pressure, and decreases the mean-free-paths of the CO2 molecules inside the bubbles, in order to increase solubility of CO2 and the rate of dissolution of gaseous CO2 from a mixture of gases into the calcium hydroxide solution.The CO2 scrubber recovers gaseous CO2 directly from the atmosphere, from post-combustion flue gas, or from industrial processes that release CO2 as a result of process. CO2 reacts with calcium ions and hydroxide ions in solution forming insoluble calcium carbonate precipitates. The calcium carbonate precipitates are separated from solution, and sold to recover at least a portion of the cost of CCS.

A pipette dispensing block has an improved piston seal and lift plate engagement / disengagement means. In a pipette dispensing block where a piston is used to create a pressure differential to aspirate or extract and dispense or eject fluid material, the maintenance of a vacuum or increased pressure is enhanced by a pair of O-ring seals engaging the piston. A reservoir separates the O-rings and is filled with a low vapor pressure lubricant such as silicone oil or grease. The lubricant is maintained in the reservoir by the O-rings and serves to enhance the vacuum seal while maintaining the O-rings in a pliable and resilient manner. The heads of the pistons are engraved or grooved to leave a circular central pillar surrounded above and below by the piston head and a lower intermediate piston pillar section. The individual pistons are arranged in straight rows so that a slat may slip through opposite pairs of opposing piston pillars thereby entrapping the pistons and preventing them from sliding past the lift plate as the lift plate is lifted upwardly. Shoulders present on the pistons below the lift plate serve to allow the lift plate to push the pistons into the cylindrical chambers of the head block so that a pipette dispenser is provided. The lift plate or portions thereof are then trapped between the slats and the piston shoulders, coupling the pistons to the lift plate. Upward and downward control is thereby established and maintained by the lift plate on the pistons.

Devices and methods having a cooling material and reduced pressures to treat biological external tissue using at least one energy source are disclosed. The cooling material may be water, ethyl alcohol, and / or any other material having a vapor pressure below atmospheric pressure. The energy source may be incoherent light, coherent light, a radio frequency, ultrasound, a laser, and / or any other type of energy that can be applied through the device. The features of various embodiments of the device include the generation of positive pressure and / or negative pressure through one or more pressure conduits, the application of an object within a recess of the device, and measurements through various sensors on the device. These sensors may be monitored and / or controlled through a display element having rows and columns of pixels on the device. The device may be a handheld device or an add-on to existing devices in some embodiments, and may include skin color sensors, temperature sensors, motion sensors, vapor pressure sensors, material sensors, and / or capacitance sensors.