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291results about How to "Increase vapor pressure" patented technology

Method and means for capture and long-term sequestration of carbon dioxide

InactiveUS20090081096A1High heat of reactionHigh regeneration energyCombination devicesGas treatmentSolubilityAmbient pressure
The invention teaches a practical method of recovering CO2 from a mixture of gases, and sequestering the captured CO2 from the atmosphere for geologic time as calcium carbonate and provides a CO2 scrubber for carbon capture and sequestration. CO2 from the production of calcium oxide is geologically sequestered. A calcium hydroxide solution is produced from the environmentally responsibly-produced calcium oxide. The CO2 scrubber incorporates an aqueous froth to maximize liquid-to-gas surface area and time-of-contact between gaseous CO2 and the calcium hydroxide solution. The CO2 scrubber decreases the temperature of the liquid and the mixed gases, increases ambient pressure on the bubbles and vapor pressure inside the bubbles, diffuses the gas through intercellular walls from relative smaller bubbles with relative high vapor pressure into relative larger bubbles with relative low vapor pressure, and decreases the mean-free-paths of the CO2 molecules inside the bubbles, in order to increase solubility of CO2 and the rate of dissolution of gaseous CO2 from a mixture of gases into the calcium hydroxide solution.
The CO2 scrubber recovers gaseous CO2 directly from the atmosphere, from post-combustion flue gas, or from industrial processes that release CO2 as a result of process. CO2 reacts with calcium ions and hydroxide ions in solution forming insoluble calcium carbonate precipitates. The calcium carbonate precipitates are separated from solution, and sold to recover at least a portion of the cost of CCS.
Owner:WESTEC ENVIRONMENTAL SOLUTIONS

Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors

A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber, and exposing the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process. The deposition system contains a substrate holder configured for supporting and heating a substrate in a process chamber having a vapor distribution system, a precursor delivery system configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system, a dilution gas source configured for adding a dilution gas to the process gas in the process chamber, and a controller configured for controlling the deposition system during exposure of the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
Owner:TOKYO ELECTRON LTD
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