The invention belongs to the field of
semiconductor materials, and discloses a method for preferentially growing an epsilon-phase
gallium oxide epitaxial film through
oxygen flow regulation and control. The preparation method comprises the following steps: cleaning a
sapphire substrate, and putting the
sapphire substrate into a cavity of a
metal organic
chemical vapor deposition system; setting air pressure in the reaction cavity, introducing carrier gas, raising the temperature to a first preset temperature, introducing first preset high-flow
oxygen, and entering a substrate high-
oxygen preheating stage; raising the temperature to a second preset temperature, opening the
gallium source, introducing second preset low-flow oxygen, and entering an epitaxial low-oxygen growth stage; closing the
gallium source, introducing third preset high-flow oxygen, and entering an in-situ high-
oxygen annealing stage; and after annealing is finished, recovering normal pressure, cooling to
room temperature, and taking out to obtain the epsilon-phase
gallium oxide epitaxial film. The pure phase property and the
crystal quality of the epsilon-phase
gallium oxide epitaxial film are improved in an oxygen flow regulation and
control mode, and a way is laid for subsequent preparation of electronic and power devices.