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69results about How to "High characteristic" patented technology
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Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS8148779B2Improve featuresAvoid chargingSolid-state devicesSemiconductor/solid-state device manufacturingTrappingEngineering
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS7994500B2Improve featuresAvoid chargingSemiconductor/solid-state device detailsSolid-state devicesTrappingOxide thin-film transistor
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS20090321731A1Improve featuresAvoid chargingSemiconductor/solid-state device manufacturingNon-linear opticsTrappingEngineering
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS20090321732A1Improve featuresAvoid chargingSemiconductor/solid-state device manufacturingNon-linear opticsTrappingEngineering
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Method and apparatus for forming capping film
InactiveUS20050009340A1Suppress excess corrosionHigh characteristicSemiconductor/solid-state device detailsSolid-state devicesMetal catalystSemiconductor
A capping film serving as an interconnect protective film formed on a surface of interconnect metal on a semiconductor substrate is formed after forming a catalyst layer for electroless plating under low oxygen concentration condition. A method for forming a capping film for protecting a surface of interconnect metal includes preparing a metal catalyst solution containing a metal element nobler than interconnect metal and having dissolved oxygen concentration of 7 ppm or less, bringing said metal catalyst solution into contact with a surface of interconnect metal to form a metal catalyst layer on the surface of the interconnect metal, and performing electroless plating to form a capping film on the surface of the interconnect metal.
Owner:EBARA CORP
Nitride semiconductor device, method for manufacturing the same and nitride semiconductor power device
Disclosed herein are a nitride semiconductor device, a method for manufacturing the same, and a nitride semiconductor power device. According to an exemplary embodiment of the present invention, a nitride semiconductor device includes: a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas (2DEG) channel formed therein; a D-mode FET that includes a gate electrode Schottky-contacting with the nitride semiconductor layer to form a normally-on operating depletion-mode (D-mode) HEMT structure; and a Schottky diode part that includes an anode electrode Schottky-contacting with the nitride semiconductor layer and increases a gate driving voltage of the D-mode FET, the anode electrode being connected to the gate electrode of the D-mode FET. In addition, the nitride semiconductor power device and the method for manufacturing a nitride semiconductor device are proposed.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD
Combination of lithium ion batteries
InactiveUS20060197496A1Increase energy densityLess charge timePrimary cell to battery groupingBatteries circuit arrangementsLithium-ion batteryLithium electrode
A combination of lithium ion batteries comprises first and second lithium ion secondary batteries connected in parallel, the first lithium ion secondary battery including an anode active material layer with a thickness in the range of 10 to 40 μm and a cathode active material layer with a thickness in the range of 10 to 40 μm, the second lithium ion secondary battery having a volumetric energy density of 250 Wh / l or more. Therefore, the combination of lithium ion batteries can be charged with less charging time than conventional batteries, and can also ensure a high cycle characteristic and safety.
Owner:TDK CORPARATION
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS20120153278A1Improve featuresAvoid chargingSemiconductor/solid-state device manufacturingNon-linear opticsThin membraneEngineering
Owner:SAMSUNG DISPLAY CO LTD
Valve train for internal combustion engine
InactiveUS20050056241A1Excellent low friction propertiesHigh wear resistanceValve drivesLiquid carbonaceous fuelsCarbon filmHydrogen
A valve train for an internal combustion engine is comprised of a lubricating oil, and a camshaft which is made of an iron-based material and comprises a cam lobe and a camshaft journal. The camshaft slidingly moves on a counterpart thereof through the lubricating oil. A hard carbon film is formed on at least one of a sliding portion of the camshaft and the counterpart made of an iron-based material. A hydrogen amount of the hard carbon film is 10 atomic percent or less.
Owner:NISSAN MOTOR CO LTD
Control device for vehicle
ActiveUS20120179342A1Guaranteed uptimeHigh characteristicDigital data processing detailsPlural diverse prime-mover propulsion mountingVariatorGear ratio
In a control device for a vehicle that controls a revolution speed of a drive power source or a gear ratio of a transmission coupled to an output side of the drive power source in the vehicle equipped with the drive power source and the transmission, the control device is configured to determine an index that is based on a running state of the vehicle, and to control a required revolution speed of the drive power source or a required gear ratio for the transmission on the basis of the index.
Owner:TOYOTA JIDOSHA KK
Prism sheet and optical sheet
InactiveUS20100039704A1Increase brightnessWide viewing angle characteristicPolarising elementsOptical light guidesTransmittanceLight beam
Owner:SEKISUI CHEM CO LTD
Snowmobile track belt
InactiveUS6494548B2High characteristicIncreased durabilityDriving beltsEndless track vehiclesGround contactLeather belt
The invention relates to a snowmobile endless track belt of the type having a body made of an elastomeric material, an outer surface for contact with the ground and an inner surface provided with lugs for engagement with the snowmobile driving system and with at least one endless pathway that contacts a corresponding slide rail of the snowmobile suspension. The elastomeric material, in at least the area which is contacted by the slide rail, is composed of rubber and of a lubricating material so that friction generated between the slide rail and a driven belt is greatly reduced by the presence of such lubricating material in the elastomeric material.
Owner:CAMOPLASY INC
Optical recording medium
InactiveUS6908655B2High characteristicHigh stiffnessLayered productsMechanical record carriersResin-Based CompositeOptical recording
Owner:TEIJIN KASEK KK +1
Winding assembly type lithium ion secondary power batteries
ActiveUS20060110658A1High characteristicExcellent high discharge rateCell electrodesFinal product manufactureFastenerCurrent collector
A type of winding assembly type lithium ion secondary power battery includes: winding assembly type electrode cores wound with positive electrodes, negative electrodes and a separation membrane, electrolyte, and a battery shell. Its characteristics are: the interior of the battery shell carries at least one electrode units formed by electrode holders holding many stacked electrode cores. The terminal leads of the current collector for all positive and negative electrode cores are led from the upper and lower ends of the electrode unit respectively. The positive and negative terminals on cover boards and the outer side of the cover boards are connected to terminal leads of the current collector by built-in fasteners. There is a separation ring between the electrode core body of the battery and the cover boards of the battery. The present invention simplifies the manufacturing technology, increases the energy density of the battery, the mechanical property and safety property of the battery, and has an excellent high discharge property.
Owner:BYD CO LTD
Nickel composite hydroxide and method for producing the same, positive electrode active material and method for producing the same as well as nonaqueous electrolytic secondary cell
ActiveUS20140186710A1Increase cell capacityHigh characteristicPolycrystalline material growthFrom normal temperature solutionsLiquid temperatureManganese
A nickel composite hydroxide represented by Ni1-x-y-zCoxMnyMz(OH)2+A (where 0≦x≦0.35, 0≦y≦0.35, 0≦z≦0.1, 0<x+y, 0<x+y+z≦0.7, 0≦A≦0.5, with M being at least one of V, Mg, Al, Ti, Mo, Nb, Zr and W), a plate-shaped crystal core is generated by allowing a crystal core generating aqueous solution containing cobalt and / or manganese to have a pH value of 7.5 to 11.1 at a standard liquid temperature of 25° C., and slurry for the particle growth containing the plate-shaped crystal core is adjusted to a pH value of 10.5 to 12.5 at a standard liquid temperature of 25° C., while a mixed aqueous solution containing a metal compound containing at least nickel is being supplied thereto, so that the crystal core is grown as particles.
Owner:SUMITOMO METAL MINING CO LTD
Semiconductor device and method for manufacturing the same
InactiveUS20130161621A1High characteristicHigh yieldTransistorSolid-state devicesPhysicsOxide semiconductor
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.
Owner:SEMICON ENERGY LAB CO LTD
Valve train for internal combustion engine
InactiveUS7146956B2Improve featuresHigh characteristicValve drivesLiquid carbonaceous fuelsCarbon filmHydrogen
A valve train for an internal combustion engine is comprised of a lubricating oil, and a camshaft which is made of an iron-based material and comprises a cam lobe and a camshaft journal. The camshaft slidingly moves on a counterpart thereof through the lubricating oil. A hard carbon film is formed on at least one of a sliding portion of the camshaft and the counterpart made of an iron-based material. A hydrogen amount of the hard carbon film is 10 atomic percent or less.
Owner:NISSAN MOTOR CO LTD
Coherent light source and optical device
InactiveUS20070053388A1Small sizeHigh characteristicOptical resonator shape and constructionActive medium shape and constructionCoupling efficiencyLight source
It is easy to increase output with a wide stripe laser, but the lateral mode is a multimode, and the coupling efficiency is low with a single-mode fiber or a single-mode waveguide, creating problems in terms of increasing output. To solve these problems, the light emitted from a wide stripe semiconductor laser is passed through a mode converter and a wavelength selecting filter, then fed back to the active layer of the semiconductor laser, which fixes the oscillation mode of the semiconductor laser to single mode.
Owner:PANASONIC CORP
Electrophoretic display module and electrophoretic display device
ActiveUS20070103429A1High display quality and electrical characteristicReliable sealStatic indicating devicesNon-linear opticsDisplay deviceElectrophoresis
An electrophoretic display (EPD) module includes an EPD laminate, conductive portions made of ITO layers which are located at both ends of the EPD laminate, a casing that encloses the EPD laminate, and retentive portions that are provided in the casing and retain the EPD laminate, in which the retentive portions contact and retain at least a part of the conductive portions to position the EPD laminate with respect to the casing.
Owner:E INK CORPORATION
Speaker enclosure with a liquid chamber for mounting a speaker driver
InactiveUS20060045301A1High characteristicEnhanced low frequencyFrequency/directions obtaining arrangementsTransducer casings/cabinets/supportsEngineeringLoudspeaker enclosure
Disclosed is a speaker including a speaker enclosure having a liquid chamber to mount and enclose a speaker driver. The speaker enclosure includes a front mounting portion and a body portion. The front mounting portion has an opening to mount the speaker driver and the body portion extends rearwardly from the mounting portion and the speaker driver is enclosed by the front mounting portion and the body portion within an interior of the speaker enclosure. Particularly, the body portion includes a liquid chamber that may be filled with a liquid to affect the tuning of the speaker enclosure to enhance lower frequencies.
Owner:JAKUBAITIS FR J
Positive Electrode Material, Positive Electrode, and Lithium Secondary Battery Which Include Spinel-Structured Lithium Manganese-Based Positive Electrode Active Material
ActiveUS20200083524A1Improve rolling densityImprove high temperature stabilityPositive electrodesCobalt compoundsElectrical batteryManganese
The present disclosure relates to a positive electrode material including a spinel-structured lithium manganese-based first positive electrode active material and a lithium nickel-manganese-cobalt-based second positive electrode active material, wherein the first positive electrode active material includes a lithium manganese oxide represented by Formula 1 and a coating layer which is disposed on a surface of the lithium manganese oxide, the second positive electrode active material is represented by Formula 2, and an average particle diameter of the second positive electrode active material is greater than an average particle diameter of the first positive electrode active material, and a positive electrode and a lithium secondary battery which include the positive electrode material:Li1+aMn2-bM1bO4-cAc [Formula 1]Li1+x[NiyCozMnwM2v]O2-pBp [Formula 2]
Owner:LG ENERGY SOLUTION LTD
Composite magnetic sealing material and electronic circuit package using the same
ActiveUS9972579B1Higher magnetic characteristicHigh characteristicSemiconductor/solid-state device detailsSolid-state devicesCrystalliteElectronic circuit
Disclosed herein is a composite magnetic sealing material includes a resin material and a filler blended in the resin material in a blend ratio of 50 vol. % or more and 85 vol. % or less. The filler includes a first magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni, the first magnetic filler having a first grain size distribution, and a second magnetic filler having a second grain size distribution different from the first grain size distribution.
Owner:TDK CORPARATION
Lubricant composition and use thereof
InactiveUS20120021253A1Improve stabilityHigh characteristicOrganic chemistryLayered productsHydrogen atomSingle bond
[Problem] Provided is a novel lubricant composition that is useful as a material of a lubricating layer of a magnetic recording medium.[Means for Resolution] The lubricant composition contains at least one kind of compound represented by the following Formula (1). In the formula, X represents a cyclic group that may be substituted, and Y represents a single bond or a linking group having a valency of 2 or more. Here, at least one of X and Y includes 1 or more polar groups such as a hydroxyl group; Z represents a linking group having a valency of 2 or more and constituted with a carbon atom (C), a fluorine atom (F), and 1 or 2 kinds of arbitrary atoms (here, a hydrogen atom is excluded); n represents a real number of 1 to 10; m represents a real number of 0 to 1; and s and t independently represent a real number of 1 or greater.XYZ—CnF2n+1-mHm]s]t (1)
Owner:FUJIFILM CORP
Nitrided niobium powders and niobium electrolytic capacitors
InactiveUS6896715B2High characteristicHigh surface areaSolid electrolytic capacitorsLiquid electrolytic capacitorsNitrogenNiobium
Owner:GLOBAL ADVANCED METALS USA
Piezoelectric device, liquid droplet ejecting head using the same, and process for producing the same
InactiveUS20090066188A1High piezoelectric characteristic and durabilityAvoid it happening againPiezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostriction/magnetostriction machinesGas phaseEngineering
The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0<x≦1, 0<y≦1, and 2.5<z≦3. A first value of x / y in a first area of the film 100 nm apart from a surface of contact with the second electrode toward the first electrode ranges from 0.8 to 1.6 or is 0.7 times or more but not greater than 1.5 times a second value of x / y in a center area of the film, or the first area has a ratio of perovskite peaks to pyrochlore peaks as measured by XRD of 0.2 or more.
Owner:FUJIFILM CORP
Non-aqueous electrolyte secondary battery and production method thereof
InactiveUS20080311471A1Increase capacityHigh characteristicNon-aqueous electrolyte accumulatorsFinal product manufactureMetalMaterials science
A method for producing a non-aqueous electrolyte secondary battery comprising the steps of: (i) mixing a positive electrode active material, a first binder A and a dispersion medium to prepare a paste A, the active material comprising a lithium-containing transition metal oxide; (ii) mixing a conductive agent, a second binder B and a dispersion medium to prepare a paste B, the conductive agent comprising carbon black; (iii) mixing the paste A and the paste B to prepare a positive electrode material paste C; (iv) applying the positive electrode material paste C onto a positive electrode core member and rolling and drying the resultant member to prepare a positive electrode; and (v) fabricating a battery using the positive electrode, a negative electrode and a non-aqueous electrolyte, wherein contact angle θA between the non-aqueous electrolyte and the binder A and contact angle θB between the non-aqueous electrolyte and the binder B satisfy the formula (1): θB−θA≧15°.
Owner:PANASONIC CORP
RFID tag
InactiveUS20060208095A1Efficient processHigh characteristicSolid-state devicesSensing record carriersTag antennaAntenna gain
With the RFID comprising a transmitting and receiving antenna, a detecting block formed in the circumference of the antenna, and an electronic component connected to the antenna and detecting block to detect breakdown of the detecting block, illegal use can be prevented, matching between the tag antenna and IC chip can also be attained with inclusion of the detecting means, and higher radiation and receiving characteristics of antenna can also be obtained without deterioration of antenna gain. Moreover, the RFID is very effective for keeping security because illegal use of the RFID tag through re-adhesion thereof to an item can be prevented.
Owner:FUJITSU LTD
Snowmobile track belt
InactiveUS20010030467A1High characteristicIncreased durabilityDriving beltsEndless track vehiclesGround contactLeather belt
The invention relates to an improvement in a snowmobile endless track belt of the type comprising a body made of an elastomeric material, an outer surface for contact with the ground and an inner surface provided with lugs for engagement with the snowmobile driving system and with at least one endless pathway that contacts a corresponding slide rail of the snowmobile suspension. The improvement is characterized in that the elastomeric material, in at least the area which is contacted by the slide rail, is composed of rubber and of a lubricating material so that friction generated between the slide rail and a driven belt is greatly reduced by the presence of such lubricating material in the elastomeric material.
Owner:CAMOPLASY INC
Bicycle wheel particularly for racing and mountain bicycle
A bicycle wheel, particularly for racing and mountain bicycle, comprising a hub (3) that has two flanges (4,5) connected to a rim (2) by way of wire spokes, said wire spokes forming a first plurality of radial elements (6), which are mutually angularly equidistant by a preset angle and connect said rim (2) to the first flange (4) of said hub (3), and a second plurality of radial elements (6), which are mutually angularly equidistant by said angle, are offset by half of said angle with respect to said first plurality and connect said rim (2) to the second flange (5) of said hub (3), each one of said radial elements (6) being constituted by a first wire spoke (7) and a second wire spoke (8) which are substantially parallel.
Owner:VUELTA INT
Adaptive power amplifier and radio frequency transmitter thereof
ActiveUS20170294885A1High output powerHigh characteristicAmplifier modifications to reduce non-linear distortionHigh frequency amplifiersCommunications systemAudio power amplifier
An adaptive power amplifier and a radio frequency transmitter thereof are described. The radio frequency transmitter is a transmitter to transmit a transmission signal for a wireless communication system. The radio frequency transmitter includes at least one direct-current (DC) to direct-current (DC) converter coupled to an external power supply device for operation, a digital-to-analog converter configured to convert a digital signal into an analog signal, a filter configured to filter a harmonic component of the analog signal to generate an input signal, a RF up-converter configured to up-convert the input signal according to a desired channel frequency for generating a modulated signal, and a power amplifying circuit coupled to the DC-to-DC converter and the external power supply device, for selectively receiving one of different supply voltages for operation, and amplifying the modulated signal to generate a RF output signal.
Owner:DIALOG SEMICON KOREA INC
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