755results about How to "Reduce oxygen concentration" patented technology

A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

A capping film serving as an interconnect protective film formed on a surface of interconnect metal on a semiconductor substrate is formed after forming a catalyst layer for electroless plating under low oxygen concentration condition. A method for forming a capping film for protecting a surface of interconnect metal includes preparing a metal catalyst solution containing a metal element nobler than interconnect metal and having dissolved oxygen concentration of 7 ppm or less, bringing said metal catalyst solution into contact with a surface of interconnect metal to form a metal catalyst layer on the surface of the interconnect metal, and performing electroless plating to form a capping film on the surface of the interconnect metal.

An inert gas generating system for generating inert gas on a vehicle having a fuel tank and a fuel tank vent. The system includes an inlet for receiving a flow of gas having a nitrogen component and an oxygen component from a gas source, a heat exchanger downstream from the inlet and in fluid communication with the inlet for cooling gas received from the inlet, and a gas separation module downstream from the heat exchanger and in fluid communication with the heat exchanger for separating gas received from the heat exchanger into a nitrogen-enriched gas flow and an oxygen-enriched gas flow. The gas separation module is adapted to deliver nitrogen-enriched gas from the nitrogen-enriched gas flow to the fuel tank without delivering the nitrogen-enriched gas through the fuel tank vent. The gas separation module is also adapted to deliver nitrogen-enriched gas from the nitrogen-enriched gas flow to the fuel tank vent.

A fire suppression system includes a high pressure inert gas source that is configured to provide a first inert gas output and a low pressure inert gas source that is configured to provide a second inert gas output. A distribution network is connected with the high and low pressure inert gas sources to distribute the first and second inert gas outputs. A controller is operatively connected with at least the distribution network to control how the respective first and second inert gas outputs are distributed.

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

A method of forming a semiconductor-on-insulator (SOI) substrate using a thermal annealing process to provide a semiconductor base wafer having a thin high resistivity surface layer that is positioned at the interface with the buried insulating layer is provided. Specifically, the inventive method fabricates an a semiconductor-on-insulator (SOI) substrate having an SOI layer and a semiconductor base wafer that are separated, at least in part, by a buried insulating layer, wherein the semiconductor base wafer includes a high resistivity (HR) surface layer located on a lower resistivity semiconductor portion of the semiconductor base wafer, and the HR surface layer forms an interface with the buried insulating layer.

A system for suppressing fire in an enclosed space, e.g. an aircraft cabin or freight compartment, includes nitrogen tanks and/or generators to rapidly supply a limited quantity of nitrogen with a high flow rate, and a membrane system to supply an essentially unlimited quantity of nitrogen at a lower supply rate for a long duration. The membrane system includes a selectively permeable membrane that separates nitrogen gas from ambient environmental air that is supplied into the membrane system. Once a fire is detected, nitrogen is supplied from the nitrogen gas tanks and/or generators at a high rate to rapidly increase the nitrogen concentration and establish a reduced oxygen concentration (e.g. 12 vol. %) in the enclosed space. Then, nitrogen is supplied from the membrane system at a reduced rate for a long duration to maintain the reduced oxygen concentration in the enclosed space until the fire is extinguished by oxygen starvation.

System, methods, and strategies for regulating charge air temperature in an intake manifold of an internal combustion engine (50) by controlling the flow rate and temperature of liquid engine coolant flowing through a liquid flow path of a charge air cooler (72) that is in heat exchange relationship with charge air entering the intake manifold over a range that provides for the charge air to be selectively heated and cooled by liquid engine coolant. The invention provides flexible control that is useful in controlling exhaust gas temperature for regeneration and/or efficiency restoration of exhaust after-treatment devices (66) as well as improved engine performance.

A system for a diesel engine having an intake manifold and an exhaust manifold, comprising a turbocharger coupled between the intake and exhaust manifolds of the engine; a low pressure exhaust gas recirculation system with a first end coupled to the exhaust manifold downstream of the turbocharger and a second end coupled to the intake manifold upstream of the turbocharger, said low pressure exhaust gas recirculation having a first valve coupled thereto for regulating flow; a high pressure exhaust gas recirculation system with a first end coupled to the exhaust manifold upstream of the turbocharger and a second end coupled to the intake manifold downstream of the turbocharger, said high pressure exhaust gas recirculation having a second valve coupled thereto for regulating flow; a first mass airflow sensor coupled in the engine intake manifold upstream of said second end of said low pressure exhaust gas recirculation system; a second mass airflow sensor coupled in the engine intake manifold downstream of said second end of said low pressure exhaust gas recirculation system and upstream of said second end of said high pressure exhaust gas recirculation system.

The invention discloses a municipal sludge drying and incineration system. The system comprises an incinerator, wherein a smoke outlet of the incinerator is communicated with a sludge dryer; a tail gas outlet of the sludge dryer is connected with a heat exchanger and the incinerator respectively; the heat exchanger is communicated with a tail gas treatment system; one path of a discharge port of the sludge dryer is communicated with the incinerator, while the other path is communicated with a pyrolyzing furnace; and a discharge port of the pyrolyzing furnace is respectively communicated with an activated carbon tail gas treatment system and the incinerator. The invention also discloses a process for treating the municipal sludge drying and incineration system. The system has the advantages of simple system formation, small energy consumption in sludge treatment process, no secondary pollution, concise whole processing procedure, low failure rate and the like.

A system and process is provided to deplete or remove oxygen in the ullage of a fuel tank to reduce the oxygen/fuel vapor ratio below a lower explosion limit by exposing the ullage compounds to an oxygen removal catalyst active at a relatively low temperature. The oxygen removal catalyst may be a non-precious metal catalyst. A selective reaction of the oxygen by the catalyst forms primarily alcohols, aldehydes, and/or ketones and produces less than about 5% water by volume. The selective reaction, occurring at the relatively low temperature, reduces the risk of flammability of the fuel.

The invention provides a starting and shutdown control method for a proton exchange membrane fuel cell. According to the method, a whole fuel cell stack is divided into a plurality of cell modules; each cell module is connected with a modularized discharging circuit which is composed of a control switch, an auxiliary load and a crystal diode in mutual series connection; each modularized discharging circuit and a main load circuit are in series connection and are respectively connected with the cathode end and the anode end of the fuel cell; an air source is connected with the anode end of the fuel cell through an air blow-down valve; and air is used to purge residual hydrogen at the anode. During starting control, hydrogen is used to purge the anode, and the auxiliary load is used to control the voltage of the cell; and during shutdown control, introduction of air and introduction of hydrogen are successively stopped, a closed system of the auxiliary load is used for discharging, and introduction of air is cooperatively used for purging of the anode. The invention has the following advantages: consumption of time during shutdown of the fuel cell is reduced; the concentration of residual oxygen at the cathode is lowered down; reversal of poles of a single cell in the modules is prevented, and the phenomenon of reversal of poles of the fuel cell in the processes of shutdown discharging and air purging is prevented; and the system of the fuel cell is more simplified and is convenient to operate.

The present invention relates to an improved exhaust gas cleaning system and method for a combustion source comprising a hydrogen generation system, a sulfur oxides trap, and a nitrogen storage reduction (NSR) catalyst trap. The improved exhaust gas cleaning system and method of the present invention also provides for a water-gas-shift catalyst between the sulfur oxides trap and the NSR catalyst trap, and a clean-up catalyst downstream of the NSR catalyst trap. The invention provides also a sulfur trap regenerable at moderate temperatures with rich pulses, rather than at high temperatures. The improved exhaust gas cleaning system of the present invention provides for the sulfur released from the sulfur trap to pass through the nitrogen oxide trap with no or little poisoning of NO_x storage and reduction sites, which significantly improves NSR catalyst trap lifetime and performance to meet future emissions standards. The disclosed exhaust gas cleaning systems are suitable for use in internal combustion engines (e.g., diesel, gasoline, CNG) which operate with lean air/fuel ratios over most of the operating period.

An air separation system and method wherein the outlet of a primary air separation module (one or more modules or bundles of fiber membranes) is split into two flow paths, a low flow path and a high flow path. The outlet of a secondary air separation module (one or more modules or bundles of fiber membranes) is split into two flow paths, a mid flow path and a high flow path, the latter being joined with the high flow of the primary air separation module. Flow along the primary low flow passes through a low-flow orifice, flow along the secondary mid-flow path passes through a mid-flow orifice, and flow along the high flow paths of both the primary and secondary air separation modules is joined together for passage through a shutoff valve and a high flow orifice. This configuration allows for three different flow modes of operation.

The invention relates to a heater composite sanitary napkin and a preparation and packaging method thereof. The heater composite sanitary napkin is composed of a conventional sanitary napkin and a heater combined layer, the heater combined layer is composed of upper and lower surface layers of air-permeable layers with the same structures and materials and a middle heating substance sheet layer, the middle sheet of the air-permeable layers is melt blowing nonwoven fabric, the upper and lower layers are nonwoven fabric which is made by the composite technology; and the heating substance sheet layer is formed by mixing and pressing metal signal substance, sodium chloride and activated carbon according to the proportion. The heating sheet layer is firstly arranged in the heater combined layer which is provided with seven layers and is formed between the two pre-made air-permeable layers by hot rolling and then is fixed between an absorption layer and a mesh surface layer of the sanitary napkin by binding or hot rolling, the vacuum pumping is carried out or protective gas is introduced, the exterior thereof is packaged by an oxygen isolating thin film, and the formed package body can be stored for a long time. The reaction is activated by tearing the thin film. The product has the effects of waterproof, anti-leakage, convenient and long-term stable heating, warming uterus and reducing dysmenorrheal. The preparation method is simple and the packaging effect is good.

A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100° C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 Ωcm or more and a carbon concentration is 5×10¹⁵ to 5×10¹⁷ atoms/cm³ so that a remaining oxygen concentration becomes 6.5×10¹⁷ atoms/cm³ or more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.

This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×10¹⁷ to 20×10¹⁷ atoms/cm³ (ASTM F-121, 1979), and either one of a nitrogen concentration of 1.0×10¹³ to 10×10¹³ atoms/cm³ (ASTM F-121, 1979) and a carbon concentration of 0.5×10¹⁶ to 10×10¹⁶ atoms/cm³ or 0.5×10¹⁶ to 50×10¹⁶ atoms/cm³ (ASTM F-123, 1981) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere. A peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration or the carbon concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from the wafer surface.

A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×10¹⁷ atoms/cm³ (ASTM F-121, 1979) or more and a carbon concentration is 0.5×10¹⁶ atoms/cm³ or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×10¹⁷ atoms/cm³ (ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×10⁴/cm² or more.