The invention relates to the field of semiconductors, in particular to a preparation method and a value fixing method of a
wafer dielectric film
doping concentration standard sample
wafer. Comprising the following steps: S1, preparing two
silicon substrates, and performing a deposition step through PECVD (
Plasma Enhanced
Chemical Vapor Deposition) so as to deposit buffer
layers on the
silicon substrates; s2, executing a deposition step on one
silicon substrate through PECVD (
Plasma Enhanced
Chemical Vapor Deposition) so as to deposit the
dielectric film layer on the buffer layer; according to the preparation method, impurities such as
boron and
phosphorus in the standard sample can be effectively prevented from reacting with internal or external
moisture, and the problem that the
impurity concentration changes along with time is solved, so that the stability is kept; the defects related to
phosphorus and
boron in the
dielectric film during annealing and the phenomenon that the
dopant diffuses towards the silicon substrate and the outside can be effectively improved; according to the valuing method disclosed by the invention, precise valuing of the contents of the dopants B and P of the dielectric film layer can be realized through ICP / MS based on the developed standard sample
wafer and the auxiliary sample wafer.