125 results about "Quantum efficiency" patented technology

The application discloses a kind of high level dipole orientation tetraphenyl benzene derivatives and its preparation method and application, the tetraphenyl benzene derivative has structure shown in formula (I):In formula (I), any two of R1, R2, R3, R4 Four groups are each independently selected from N-containing electron-donating group, and the other two are each independently selected from electron-withdrawing group.The tetraphenyl benzene derivative is prepared using two-step suzuki coupling reaction.The tetraphenyl benzene derivative of the application has excellent solid-state light emitting efficiency and high molecular level dipole orientation, and can be used as non-doped light-emitting layer to prepare non-doped blue light organic electroluminescent device with high efficiency, low degree of efficiency roll-off, low start voltage, with maximum external quantum efficiency reaching 8.32%, which is greatly improved compared with prior art, and has wide application prospect in the field of organic optoelectronics.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

This application belongs to the field of display technology and relates to an optoelectronic device and its fabrication method, as well as a display apparatus. The optoelectronic device includes an anode, a hole functional layer, an active layer, an electron functional layer, and a cathode. The electron functional layer is made of a first core-shell material, the core of which includes a first N-type semiconductor material, and the shell material includes a first carbon material; and / or, a first interface layer is provided between the active layer and the hole functional layer, the first interface layer including a second core-shell material, the core of which includes a first P-type semiconductor material, and the shell material includes a second carbon material; and / or, a second interface layer is provided between the active layer and the electron functional layer, the second interface layer including a third core-shell material, the core of which includes a second N-type semiconductor material, and the shell material includes a third carbon material. The above materials have high hole / electron transport performance and a small contact angle with water, enabling them to absorb water oxygen and preventing water oxygen from entering the light-emitting layer for hydrolysis or oxidation, thereby improving the lifetime and external quantum efficiency of the optoelectronic device.

The application discloses a micro-nano grating and photocathode collaborative design method. The method breaks the traditional isolated design, and considers the micro-nano grating and the photocathode as an organic whole, and takes the spectral response or integral quantum efficiency of the system as a whole as a target function. Specifically, the method comprises the following steps: establishing a system structure model and clearly defining an optimization target and process constraints; establishing a complex refractive index-wavelength correlation model of the photocathode to accurately obtain a complex refractive index distribution; determining a set of parameters to be optimized and setting initial values; calculating the system electric field distribution under the current parameters based on an electromagnetic simulation model; combining the electric field distribution and the photoelectric emission mechanism to calculate the spectral response of the system in the target waveband; and using a parameter optimization algorithm to iteratively search the parameter space, and outputting an optimal parameter combination. The application fully considers the electromagnetic and photoelectric coupling between the two and the actual process constraints, has the advantages of high design accuracy, strong pertinence, good implementability and the like, and can significantly improve the detection sensitivity of a weak light detection device.

This application belongs to the field of coherent diffraction imaging technology, specifically disclosing an ultra-low dose coherent diffraction imaging method and apparatus. Based on a blind source separation strategy, this application uses principal component analysis to process the acquired diffraction signals, performing noise separation and updating in reciprocal space. This effectively separates mixed noise energy into noise components, thus avoiding crosstalk to the reconstruction process and significantly improving the convergence stability and robustness of coherent diffraction imaging when reconstructing diffraction signals with extremely low signal-to-noise ratios under ultra-low exposure doses. Simultaneously, this application constructs noise components separately for each scanning position and correlates noise components at different positions through low-dimensional spatial projection, achieving non-stationary noise separation. This enables more effective handling of random noise caused by the low quantum efficiency of ultra-short band detectors, thus maintaining extremely high noise robustness and reconstruction accuracy even under ultra-low exposure doses, achieving an effective improvement in resolution.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

This application discloses a high quantum efficiency near-zero thermal quenching far-red light-emitting plant supplement phosphor and its application. It is prepared by a high-temperature solid-state method and has the composition A2CaBi. 2‑x La x (PO4)2(P2O7):20%Eu 3+ , 0≤ x ≤20%, A = Cs, Li, Na, K, or Rb. This series of phosphors uses Eu as the base. 3+ As the light-emitting center, through La 3+ Effective control of the matrix crystal field to optimize Cs2CaBi 2‑x La x (PO4)2(P2O7) crystal structure, enhancing Eu 3+ Far-red light emission performance.

The present application discloses a compound, a display panel and a display device. The compound has the structure shown in Formula 1. The compound of the present application can improve the light extraction efficiency and luminous efficiency, especially the external quantum efficiency of a device, and can also effectively reduce the color shift of the device at multi-angle display.

This invention relates to the field of photocatalyst technology, specifically to a Ni single-atom / phosphorus / g-C3N4 composite material, its preparation method, and its applications. The Ni single-atom / phosphorus / g-C3N4 composite material provided by this invention uses hollow tubular g-C3N4 as a matrix, simultaneously doped with phosphorus and Ni single atoms. Results show that simultaneous doping with phosphorus and Ni single atoms can effectively regulate the electronic configuration of g-C3N4, expand visible light absorption, and promote charge separation and transfer. The hydrogen production rate of the Ni single-atom / phosphorus / g-C3N4 composite material can reach 2707.7 μmol / h. ‑1 g ‑1 The concentrations were approximately 615.4 μmol / h of pure g-C3N4. ‑1 g ‑1 ), phosphorus-doped g-C3N4 composite material (1602.2 μmol h) ‑1 g ‑1 The apparent quantum efficiency of the composite material is 4.4, 1.7, and 1.5 times that of the Ni single-atom doped g-C3N4 composite material; it has an apparent quantum efficiency of 8.8% at 400 nm and exhibits excellent stability in 6 photocatalytic hydrogen production cycles.

The application discloses a method for non-contact testing of quantum efficiency (EQE) and short-circuit current (ISC) of a solar cell, relates to the technical field of photovoltaic device testing, and aims to solve the problems that the existing quantum efficiency and short-circuit current measurement must contact electrodes, is slow and cannot cover new gateless or process pieces; a non-contact testing method of "multi-wavelength LED excitation + local shielding + carrier lateral diffusion" is provided; the method blocks the excitation light by using a shielding filter, and only transmits the electroluminescence signal of the shielding area; the EL power of each wavelength is extracted through phase-locked amplification and deep learning denoising, the continuous EQE curve is calculated by using the calibrated incident photon flux ratio, and the ISC is obtained by convolution of the AM1.5 spectrum.

The application discloses a kind of high fluorescent quantum efficiency and high stable molecular sieve confined CsPbBr3 quantum dot composite material and preparation method thereof, and relates to the technical field of optoelectronic materials.Adopt high-temperature solid-phase reaction and in-situ encapsulation strategy to restrict CsPbBr3 quantum dot in Mg-doped pure-silicon zeolite molecular sieve inside, and obtain molecular sieve confined CsPbBr3 quantum dot composite material.The molecular sieve confined CsPbBr3 quantum dot composite material provided by the application shows excellent optical stability and extremely high fluorescent quantum efficiency, and the fluorescent quantum efficiency can reach 97.4%, and the preparation method is suitable for mass production.

The application provides an electronic-integrable double-sided architecture silicon carbide thin film device and a preparation method, and belongs to the technical field of semiconductor devices. By adopting the electronic-integrable double-sided architecture silicon carbide thin film device and the preparation method provided in the embodiment of the application, through innovative technologies such as double-sided architecture design, multi-layer epitaxial structure optimization, ultra-thin substrate thinning and front vertical interconnection, excellent performances such as low leakage current, high quantum efficiency, high frequency response, high integration degree and small packaging volume are achieved. Compared with traditional silicon carbide devices, the application has significant advantages, provides an innovative solution for the application of high-performance silicon carbide devices in the fields of ultraviolet detection, high-speed optical communication, quantum precision measurement and sensors, and has important technical value and broad application prospect.

The present application is to provide a novel organic compound and an organic light emitting device comprising the same. The organic light emitting device comprising the compound represented by Chemical Formula 1 of the present application has excellent characteristics such as driving voltage, luminous efficiency, external quantum efficiency (EQE), long lifespan, and stability.

This invention belongs to the field of organic electroluminescence technology, specifically relating to a luminescent crystal material, its preparation method and application, and laser-prefabricated luminescent devices. The preparation method of the luminescent crystal material includes the following steps: a first reaction is carried out with an amino-containing spirodifluorene monomer, a halogenated nitrogen heterocyclic compound, and a fluorinated organic acid to obtain a first intermediate; the first intermediate undergoes a second reaction with a gallium halide to obtain a second intermediate; a third reaction is carried out with a carbazole derivative, a naphthenic acid derivative, a luminescent bandgap modulating organic compound, and the second intermediate to obtain a third intermediate; the third intermediate is dissolved in an organic solvent for a fourth reaction, followed by multi-directional condensation separation; the material is collected in a pre-designed receiving dish in a 90-110°C condensation zone, and then subjected to a fourth post-processing to obtain the luminescent crystal material. The prepared luminescent crystal material exhibits high quantum efficiency, excellent thermal stability, and achieves balanced red, green, and blue performance.

The present invention relates to a vertically-charge-transferring pixel sensor (VPS) and methods of manufacture and operation thereof. In the VPS, deep trench isolation (DTI) structures and shallow trench isolation (STI) structures in a substrate contain deep trench electrodes and shallow trench electrodes, respectively. In a light sensing operation, a positive bias voltage can be applied between the substrate and the deep and shallow trench electrodes to raise a potential barrier at boundaries of the DTI and STI structures and the substrate. This reduces the likelihood of photoelectrons being captured at the boundaries, thus reducing loss of photoelectrons and contributing to enhanced quantum efficiency. In addition, in the STI structures, the shallow trench electrodes may be offset toward light sensing regions beside the STI structures. In this way, a voltage applied to the shallow trench electrodes has a greater impact on potentials in the light sensing regions than on potentials in charge readout regions, thus additionally reducing loss of photoelectrons and minimizing the influence on MOS transistors in the charge readout regions.

The application relates to the technical field of LED lamp bead detection, and discloses an LED lamp bead light decay prediction method and system, which comprises the following steps: collecting the luminous flux, junction temperature and forward voltage of an LED lamp bead to obtain LED operation parameter data; performing first-order derivative and second-order derivative calculation on the LED operation parameter data to obtain parameter change rate data; performing composite threshold value detection on luminous flux drop events, temperature jump events and thermal resistance mutation events based on the parameter change rate data to obtain light decay event detection results; and generating lamp bead identification results including a thermal attenuation mode, an electromigration attenuation mode or a photochemical attenuation mode according to the light decay event detection results, in combination with carrier injection efficiency values, fluorescent powder quantum efficiency values and chip defect density values, the application drives physical parameter calculation and mode identification based on event detection results, realizes a technical transformation from passive response to active identification, and significantly improves the real-time performance and accuracy of LED light decay prediction.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.

The application provides a short-wave infrared fluorescent ceramic and a preparation method and application thereof. The short-wave infrared fluorescent ceramic has a chemical composition of Y 2‑z (Ca 1‑x M x )Al 4‑y SiO 12 :yCr 3+ ,zEr 3+ ; wherein M is one or more of Mg, Sr and Ba elements. The preparation method comprises the following steps: S1, taking oxides, nitrates, halides or carbonates containing Y, Ca, M, Al, Si, Cr and Er elements as raw materials according to the chemical composition and the metering ratio, wherein M is one or more of Mg, Sr and Ba, and then mixing the raw materials to obtain a uniform mixture; S2, subjecting the uniform mixture to a melting treatment, and then cooling to obtain a transparent glass sample; and S3, placing the transparent glass sample into a tube furnace with an atmosphere, and subjecting the transparent glass sample to a heat treatment at 900-1300 DEG C under normal pressure, and then sequentially cooling and polishing to obtain the short-wave infrared fluorescent ceramic. The short-wave infrared fluorescent ceramic prepared by the application has high transmittance, a wide emission spectrum coverage range, high luminescent quantum efficiency and excellent thermal stability.

The application discloses a method for preparing a heterojunction perovskite photodetector, comprising the following steps: preparing an electron transport layer; dissolving lead iodide and lead chloride in a mixed solution of dimethylformamide, N-methylformamide and N-methylpyrrolidone to obtain a precursor solution; in an air atmosphere, spin-coating the precursor solution onto the electron transport layer, immediately immersing into an anti-solvent after uniform spreading, and obtaining a PbI2-PbCl2 film after crystallization; spin-coating a methylammonium iodide solution onto the PbI2-PbCl2 film, and obtaining a perovskite film after vacuum annealing; spin-coating a long-chain ligand solution onto the three-dimensional perovskite film, vacuum annealing, and obtaining a perovskite heterojunction film; sequentially preparing a hole transport layer, a hole blocking layer and an anode on the perovskite heterojunction film to obtain the heterojunction perovskite photodetector. The method has the advantages that the prepared photodetector has high external quantum efficiency and high detection rate, and the preparation is simple.

An image sensor consists of backlit pixels (110) formed in and on a semiconductor substrate (101). Near-infrared radiation reaches the backlit photodetector (112) of the pixels via an upper illuminated surface (102) of the photodetector. A hybrid structure combining a diffraction grating (114) at this upper surface and an interferometric filter with non-regular layers (115) deposited on the diffraction grating traps the photons in the silicon of the photodetector. The radiation is diffracted in the photodetector at a sufficient angle so that, after reflection from trenches (113) isolating adjacent photodetectors and from the metallic layer (111) deposited on the opposite surface of the backlit photodetector, it is reflected by the interferometric filter. The photons are trapped in the substrate; their absorption, and therefore the quantum efficiency of the backlit pixel, is improved.Figure for the abbreviation: Figure 2.

This invention provides an organic compound and its applications. The organic compound has the structure shown in Formula I, containing a double boron core structure and introducing boron-containing polar bonds. Through molecular structure design, the organic compound exhibits good stability and spatial configuration, a low HOMO energy level, high luminescence quantum efficiency, excellent carrier transport efficiency, and a narrowed full width at half maximum (FWHM), resulting in superior photoelectric performance. When used in organic electroluminescent devices, this organic compound can balance hole and electron transport, effectively extending device lifetime, improving luminescence efficiency, and enhancing color purity, thus giving the device superior overall performance.

The application discloses a manganese-activated fluoride red fluorescent ceramic and a preparation method and application thereof. The manganese-activated fluoride red fluorescent ceramic is prepared by uniformly mixing manganese-activated fluoride red fluorescent powder (or a manganese-activated fluoride matrix and a fluoromanganate) and an additive, then cold-pressing and sintering, and cooling; or the manganese-activated fluoride red fluorescent ceramic is prepared by cold-pressing and sintering manganese-activated fluoride red fluorescent powder (or a manganese-activated fluoride matrix and a fluoromanganate), and cooling. The manganese-activated fluoride red fluorescent ceramic prepared by the application has high light transmittance, can be effectively excited by ultraviolet light, near-ultraviolet light and blue light, emits narrow-band red light of about 630 nm, has an absorption efficiency of blue light greater than 70%, and has an external quantum efficiency greater than 60%. The preparation process of the red fluorescent ceramic is simple, the conditions are mild, the universality is wide, the cost is low, and the red fluorescent ceramic can be applied to the fields of white light LED and high-power laser devices.

This invention proposes a semiconductor laser device with a spin-polarized sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention establishes a multi-layered spin-polarized sublayer structure between the upper confinement layer and the upper waveguide layer in the semiconductor laser device, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, controlling the piezoelectric polarization effect of the active layer, suppressing the quantum confinement Stark effect, reducing the band tilt of the active layer, reducing the hole injection band order, increasing the overlap probability of electron-hole wave functions, and improving the internal quantum efficiency.

This invention discloses a circularly polarized luminescent material, its preparation method, and its applications. The circularly polarized luminescent material comprises a polymer matrix, quantum dots, and a hand-shaped liquid crystal; the quantum dots are uniformly physically distributed within the hand-shaped liquid crystal, forming a quantum dot-liquid crystal composite structure, which is uniformly solidified within the polymer matrix. Alternatively, the circularly polarized luminescent material has a layered structure, including a liquid crystal layer and a polymer matrix layer encapsulating quantum dots; or, the circularly polarized luminescent material has a layered structure, including a quantum dot layer and a polymer matrix layer containing liquid crystal. The three structures of the circularly polarized luminescent materials provided by this invention all possess both high luminous quantum efficiency and a large luminous asymmetry factor, with a luminous quantum efficiency greater than 60% and an absolute value of the luminous asymmetry factor greater than 1, and can be widely used in three-dimensional display, information encryption, and anti-counterfeiting fields.

This invention provides a class of short-wavelength light-converting materials based on benzoxazole, with the structure shown in Formula I, where R1 and R2 are each independently hydrogen atoms, C1-C18 straight-chain or branched alkyl groups; and R3 is an aryl group or a substituted aryl group. The short-wavelength light-converting material of this invention possesses advantages such as excellent short-wavelength ultraviolet light absorption, high luminous quantum efficiency, good photostability, low cost, and ease of mass production. When doped at a certain concentration into the encapsulating film of solar cells, it can efficiently absorb short-wavelength ultraviolet light to avoid UVID (ultraviolet-induced power degradation), and convert the absorbed short-wavelength ultraviolet light into long-wavelength ultraviolet or blue-violet light that can be efficiently utilized by solar cells, thereby increasing power generation. This is of great significance for improving the overall performance and economic benefits of photovoltaic modules.

The application belongs to the technical field of organic electroluminescent materials, and particularly relates to a polycyclic double-boron-nitrogen compound and an organic electroluminescent device thereof. The multiple resonance skeleton of the compound is annelated with a tetramethyl-containing ring to form a three-dimensional structure, which increases the intermolecular distance and prevents the intermolecular close packing, so that the compound can inhibit the fluorescence concentration quenching and the triplet exciton annihilation. Based on the above effects, when the compound is applied in the electroluminescent device, the maximum external quantum efficiency of the device can be improved, and the attenuation of the device efficiency under high brightness caused by the triplet exciton annihilation can be reduced. In addition, the anti-aggregation feature can improve the service life of the device.

Provided in the embodiments of the present application are a display panel and a preparation method therefor, and a display device. The display panel comprises a substrate, a plurality of light-emitting units arranged at intervals, and a first encapsulation layer, wherein the light-emitting units are located on the same side of the substrate, and each light-emitting unit comprises a first electrode, a light-emitting material layer and a second electrode, which are stacked in sequence on the substrate; every two adjacent second electrodes are spaced apart from each other; the first encapsulation layer is located on the side of the second electrodes away from the substrate, the first encapsulation layer comprises a plurality of encapsulation structures arranged at intervals, and each encapsulation structure covers one second electrode; and each encapsulation structure comprises an inorganic encapsulation layer, the inorganic encapsulation layer covers the surface of a corresponding second electrode away from the substrate, the material of the inorganic encapsulation layer is SiNx-H, and the atomic percentage of hydrogen in the inorganic encapsulation layer is less than or equal to 20%. Moisture can be prevented from entering the display panel and causing same to fail, thereby improving the external quantum efficiency of the display panel.

The present application relates to a kind of compound and its application, and organic electroluminescent device comprising the compound, the compound has the following structure, wherein, Z1 and Z2 are not connected, connected by single bond or connected by chemical bond to form ring A, Z3 and Z4 are not connected, connected by single bond or connected by chemical bond to form ring B, the ring A, ring B each independently selected from one of unsubstituted or R' substituted C6-C60 aryl, unsubstituted or R' substituted C3-C60 heteroaryl, R 11 Single substituent represents the maximum allowable number of substituent groups. The device prepared by using the compound of the present application can achieve higher external quantum efficiency, lower turn-on voltage, narrower half-peak width of red light emission and stable device performance. The present application will continue to promote the development of future high light efficiency, high stability, full light color multiple resonance materials and devices.

The application relates to the technical field of fluorescent material synthesis, and discloses a high-efficiency blue light complex as well as a preparation method and application thereof. The complex has a molecular formula of [(Cu) d (X) e (M) f (N) g ]; d, e, f and g are each 1 or 2; X is halogen, M is an organic phosphorus ligand, and N is 2-methyl imidazole. The high-efficiency blue light complex provided by the application has high luminous efficiency, long service life, strong stability, and the highest quantum efficiency is 71.86%, the CIE coordinate of the complex at room temperature is (0.1602, 0.136), and the complex is close to pure blue light. The high-efficiency blue light complex provided by the application is simple in preparation and purification, has high luminous efficiency, long service life and strong stability.