1703 results about "Quantum efficiency" patented technology

The invention relates to a backside illuminated image sensor and a preparation method thereof, and electronic equipment, and relates to the technical field of integrated circuits, the backside illuminated image sensor comprises a substrate, and photodiodes and laminated isolation structures which are located on the substrate, are alternately arranged along a first direction parallel to the surface of the substrate, and extend along the direction towards the substrate. The photodiode comprises an isolation layer, a first photosensitive layer, a second photosensitive layer and a third photosensitive layer which are sequentially stacked in the direction away from the substrate. The first photosensitive layer internally comprises a plurality of first SiP layers arranged at intervals in the first direction, and the first SiP layers penetrate through the first photosensitive layer in the second direction and extend to the isolation layer. And the third photosensitive layer internally comprises a plurality of second SiP layers which are arranged at intervals along the first direction, and the plurality of second SiP layers penetrate through the third photosensitive layer along the second direction and extend to the second photosensitive layer, so that the number of photon-generated carriers can be increased, and the quantum efficiency of the device can be improved.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and electronic equipment, and relates to the technical field of integrated circuits, the backside illuminated image sensor comprises a substrate, and photodiodes and laminated target isolation structures which are located on a first surface of the substrate, are alternately arranged along a first direction parallel to the first surface, and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the laminated target isolation structures right above the trench isolation structures are arranged in a one-to-one manner; the laminated target isolation structure comprises isolation parts and insulation parts which are sequentially and alternately laminated along a second direction deviating from the substrate; the photodiode comprises at least two photosensitive layers which are sequentially stacked in the second direction, the longitudinal sections of the photosensitive layers are T-shaped, one photosensitive layer makes contact with the first surface of the substrate, substrate damage caused by ion implantation can be avoided, and meanwhile the photoelectric conversion efficiency and the quantum efficiency are improved.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and an electronic device, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate which comprises an isolation layer and a plurality of first isolation structures which are arranged at intervals in a first direction parallel to the surface of the substrate; forming first isolation parts in the substrate, wherein the first isolation parts and the first isolation structures are arranged in a one-to-one manner and extend to the isolation layer through the back surface of the substrate; removing the substrate between the adjacent first isolation parts to obtain side wall semiconductor layers located on the side surfaces of the first isolation parts and first grooves between the adjacent side wall semiconductor layers; the size of the side wall semiconductor layer is gradually increased in the direction close to the isolation layer. And forming a bottom photosensitive layer in the first groove, and epitaxially growing a top photosensitive layer on the bottom photosensitive layer. And forming a second isolation part connected with the first isolation part in a gap between the adjacent top photosensitive layers, thereby improving the photoelectric conversion efficiency and the quantum efficiency.

The invention discloses a double-boron polycyclic compound for an organic electroluminescent device, and belongs to the technical field of organic electroluminescent materials. The double-boron polycyclic compound takes a spiro derivative as a center B atom to be directly bonded with N, O, S and Se, has relatively high singlet and triplet energy, proper HOMO and LUMO energy levels and relatively small singlet-triplet energy difference, and can be used as a luminescent material to be applied to an organic electroluminescent device to improve the luminous efficiency of the device and improve the color purity of the device. After the double-boron polycyclic compound is applied to an OLED as a luminescent material, the relative value of external quantum efficiency of a luminescent device is 105.6%-126.9%, the half-peak width is 22-29 nm, and compared with an OLED using BD01 as the luminescent material, the luminescent efficiency is obviously improved, the half-peak width of an emission spectrum is narrower, and the color purity is higher. The invention provides an MR-TADF material for improving the color purity of a blue light device.

The invention provides a medium-wave infrared detection chip and system, the chip is composed of a plurality of detection units arranged in the same plane, each detection unit is composed of a substrate, a buffer layer, a lower contact layer, an absorption layer, a barrier layer and an upper contact layer in sequence, the chip is arranged based on an nBp type structure, the buffer layer, the lower contact layer, the absorption layer, the barrier layer and the upper contact layer are all of a multi-period stacked superlattice structure, the thickness, the number of layers and the doping concentration of the InAs doped layers and the GaSb doped layers which are stacked in each period are controlled, dark current suppression in the mid-infrared detection process is achieved, and the quantum efficiency is effectively improved.

The invention discloses a high-power intermediate infrared fiber laser. The fiber laser is composed of a first pumping source, a second pumping source, a pumping beam combiner, a high-reflectivity fiber grating, a low erbium-doped fluoride fiber, a low-reflectivity fiber grating, a cladding light filter, a fiber end cap, a collimating lens and a dichroscope. The mode of combining erbium ion ground state transition achieved through fiber core pumping and erbium ion excited state transition achieved through cladding pumping is adopted, mid-infrared laser upper energy level particle number accumulation is obtained, and meanwhile laser lower energy level particles are effectively consumed through the cladding pumping transition process. And the population inversion state of the laser system is kept, and the particle circulation rate and the quantum efficiency from the pump light to the intermediate infrared laser are improved, so that the generation of high-power and high-efficiency intermediate infrared fiber laser is realized.

The invention belongs to the technical field of organic electroluminescent materials, and relates to a boron-containing seven-membered fused ring compound and application thereof. According to the boron-containing seven-membered fused ring compound provided by the invention, a double-naphthalene ring and a boron atom form a seven-membered ring, the seven-membered ring and an N or O atom form a ring at an adjacent position to form a large-conjugate rigid plane structure, an electron donating or electron withdrawing group is introduced at a specific position for modification, the distorted conformation at the periphery of a molecule is adjusted, and the compound has a large-conjugate rigid structure. According to the present invention, the organic light-emitting diode compound inhibits the close packing generated due to the pi-pi effect among molecules, obtains the high external quantum efficiency, has characteristics of high decomposition temperature, suitable energy level and color coordinate, and good color purity, can be used as the blue light doping in the organic light-emitting device, and can be used for the organic light-emitting device, such that the organic light-emitting device can be used for the organic light-emitting device. And the device performance of the organic light-emitting device can be obviously improved.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 mixed-dimensional heterojunction phototransistor detector and a preparation method thereof, the detector sequentially comprises a Si substrate, a SiO2 gate dielectric layer, a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 nano film from bottom to top, the quasi one-dimensional (TaSe4) 2I and MoTe2 nano film are respectively provided with a metal electrode, and a heterostructure of the (TaSe4) 2I, the MoTe2 and the metal electrodes is formed. The preparation method comprises the following steps: (1) transferring the (TaSe4) 2I nanowire to the Si substrate; (2) transferring the MoTe2 nano film to one side of the (TaSe4) 2I nanowire; (3) preparing a pattern of a bottom electrode; (4) positioning, exposing and developing the pattern of the bottom electrode to expose the electrode part needing to be evaporated; and (5) preparing a metal electrode. According to the invention, the composite effect of a (TaSe4) 2I / MoTe2 heterojunction is utilized, and dark current is inhibited through a vertical structure; moTe2 is utilized to increase light absorption, and meanwhile, grid voltage is applied, so that light current is improved, and high responsivity and external quantum efficiency are obtained.

The invention is suitable for the technical field of inorganic luminescent materials, and provides a fluorescent powder material based on a double-perovskite structure and a preparation method and application thereof. The general chemical formula of the fluorescent powder is Ca2AlNbO6: xEu < 3 + >, wherein x is a molar fraction of 0.06 to 0.30; the excitation spectrum coverage range of the fluorescent powder under the condition of monitoring the emission wavelength of 615 nm is 260-500 nm, and the emission main peak is located at 615 nm; when x is equal to 0.18, the quantum efficiency under the excitation of 396nm ultraviolet light is greater than or equal to 91%, and the red light emission ratio is greater than or equal to 85%. According to the invention, Ca2AlNbO6 double perovskite is taken as a substrate, and a red fluorescent powder material with wide-spectrum excitation and high quantum efficiency is designed through Eu < 3 + > high-concentration doping and local symmetry regulation and control design engineering, so that the characteristics of high quantum efficiency, efficient red light emission, wide-spectrum excitation and excellent concentration quenching resistance are realized.

The invention provides an epitaxial structure, a manufacturing method and a chip structure. The epitaxial structure comprises a plurality of sub-active layers, wherein each sub active layer is doped with doping elements with different concentrations. As and / or Sb trace elements are doped into the active layer, so that the disorder degree of the active layer is improved, and the internal quantum efficiency and the luminous efficiency are improved. By adopting a segmented doping mode, the forbidden bandwidth difference caused by strain accumulation of quantum well layer materials at different positions is corrected, so that the light-emitting wavelength is more consistent, and the light-emitting efficiency is further improved.

The invention discloses a micro display module and a preparation method thereof, and relates to the technical field of display. The at least two stacked pixel layers are bonded on the same side of the driving substrate, and a flat interface is arranged between every two adjacent pixel layers; each pixel layer comprises a micro LED array and a passivation layer located between micro LEDs, and the micro LEDs are electrically connected with the driving substrate; wherein the surface of the side, away from the driving substrate, of the pixel layer farthest from the driving substrate comprises a plurality of grooves, and color conversion layers used for converting part of light emitted by the micro LEDs into red light are arranged in the grooves. According to the technical scheme provided by the invention, the production yield of the micro display module is improved, and the problems that the preparation difficulty of a red micro LED is large and the external quantum efficiency is low are solved.

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, photodiodes and isolation columns, wherein the photodiodes and the isolation columns are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the photodiode comprises a bottom light sensing area, a middle light sensing area and a top light sensing area which are sequentially stacked in the second direction away from the substrate. The bottom light sensing area comprises at least two light sensing layers which are made of different materials and stacked in the second direction. The middle light sensing area comprises at least two light sensing layers which are arranged along the first direction and are made of different materials; the top light sensing area comprises at least two light sensing layers which are made of different materials and stacked in the second direction. The photoelectric conversion efficiency and the quantum efficiency are improved while substrate damage caused by ion implantation is avoided.

The embodiment of the invention provides a light-emitting diode chip set, a backlight module of a display and an illumination module, and relates to the technical field of semiconductors, the light-emitting diode chip set generates white light and comprises at least one multi-wavelength chip, the multi-wavelength chip comprises an N-type semiconductor layer, a P-type semiconductor layer, a first light-emitting layer and a second light-emitting layer, wherein the first light-emitting layer and the second light-emitting layer are arranged between the N-type semiconductor layer and the P-type semiconductor layer and are stacked. The first light-emitting layer generates light of a first wave band through electroluminescence and excites the second light-emitting layer to generate light of a second wave band, the number of wavelengths contained in the light of the first wave band and the number of wavelengths contained in the light of the second wave band are both larger than or equal to 1 and smaller than or equal to 10, and a hole isolation area exists between the first light-emitting layer and the second light-emitting layer. The multi-wavelength chip has higher external quantum efficiency, the limitation of a traditional white light scheme (blue chip + yellow fluorescent powder or blue chip + green fluorescent powder + red fluorescent powder) can be broken through, the reliability is improved, and the service life is prolonged.

The invention discloses a microstructure silicon carbide ultraviolet photoelectric detector with high quantum efficiency and a preparation method thereof, and belongs to the technical field of ultraviolet photoelectric detection. The detector adopts a bottom-to-top structural design and comprises a silicon carbide highly-doped n + type substrate, an n type buffer layer, a low-doped n-type absorption layer, a low-doped p-type absorption layer (containing a microstructure), an annular highly-doped p + type ohmic contact layer and a passivation isolation layer. Reverse bias voltage is applied to the p + type ohmic contact electrode to form a depletion electric field, and the microstructure promotes the p-i-n structure electric fields to be mutually connected and coupled, so that the photon-generated carrier depletion efficiency is improved, and the responsivity of the device and the external quantum efficiency are enhanced. And meanwhile, the microstructure enables a short-wave ultraviolet signal to directly penetrate through the p-type absorption layer to enter the internal absorption layer, so that photon-generated carrier recombination caused by surface defects of the p + type ohmic contact layer is avoided, the collection efficiency of photon-generated carriers is improved, and ultraviolet full-band detection is realized.

The invention provides a preparation method of rare earth ion heavily-doped luminescent glass and application of a light source. The rare earth ion heavily-doped luminescent glass comprises the following components in percentage by mass: 50-68% of black talcum powder, 10-25% of LiF, 10-25% of NaF, 10-25% of CaF2, an externally-doped rare earth compound accounting for 15-25% of the total mass of other raw materials (black talcum powder + LiF + NaF + CaF2), and an externally-doped clarifying agent accounting for 0.5-2% of the total mass of other raw materials (black talcum powder + LiF + NaF + CaF2). The preparation raw materials of the luminescent glass are easy to obtain and low in price, the process is simple, and industrial production is easy; the emission peak of the obtained rare earth doped luminescent glass under the excitation of purple light / ultraviolet light is 450-750 nm, the internal quantum efficiency is greater than or equal to 85%, and the luminous intensity at 150 DEG C is more than 85% of the luminous intensity at room temperature. A light source packaged by the prepared luminescent glass has the characteristics of warm white light output, low color temperature (CCTlt, 4500K), high color rendering index (CRIGt, 90) and high lumen efficiency (LEgt, 851m / W).

The invention relates to a high-efficiency near-ultraviolet heat exciton compound with circular polarization property and application of the high-efficiency near-ultraviolet heat exciton compound in preparation of a circular polarization organic electroluminescent device, and belongs to the technical field of organic photoelectric materials. The organic electroluminescent material is a high-efficiency near-ultraviolet heat exciton compound with circular polarization property, nine pairs of near-ultraviolet enantiomers are successfully designed and synthesized by combining chiral group binaphthol with fluorene with high luminous efficiency, and the nine pairs of near-ultraviolet enantiomers all show obvious circular polarization luminous property and high fluorescence quantum yield. The electroluminescent devices prepared based on the nine pairs of near ultraviolet enantiomers all show near ultraviolet emission, and the external quantum efficiency is 3.9%, 3.1%, 4.5%, 7.5%, 6.3%, 5.0%, 10.3%, 9.2% and 11.6% respectively. A new visual angle is provided for developing a near ultraviolet heat exciton material with circular polarization luminescence and high efficiency at the same time, and 3D and wide color gamut display can be directly achieved in the future.

The invention belongs to the technical field of semiconductor material synthesis, and particularly relates to a high-quantum-efficiency and high-stability cadmium selenide quantum sheet and a preparation method thereof.The high-quantum-efficiency and high-stability cadmium selenide quantum sheet is obtained after the cadmium selenide quantum sheet is dispersed in a solvent and a Z-type ligand is added into the solvent; the cadmium selenide quantum sheet is a purified cadmium selenide quantum sheet; the Z-type ligand is cadmium caprylate; the quantum chip has the characteristic of high luminescence, the quantum efficiency of the synthesized quantum chip reaches up to 95%, and compared with the prior art, the quantum efficiency of the prepared quantum chip is higher; the quantum chip has the characteristic of long-term stability, and after the synthesized quantum chip is added into the cadmium caprylate ligand, the luminous intensity can be basically kept unchanged for several months; according to the preparation method, synthesis preparation in air can be achieved, and compared with the operation that synthesis preparation needs to be carried out under nitrogen or argon, the preparation method is simpler, and the cost is saved.

The invention relates to a high-speed low-dark-current three-step structure avalanche photodetector and a preparation method thereof, and belongs to the technical field of semiconductor devices. Comprising an intrinsic InP substrate, an N-type InAlAs ohmic contact layer, an intrinsic InAlAs transition layer, an N-type InAlAs charge layer, an intrinsic InAlAs multiplication layer, a P-type InAlAs charge layer, an intrinsic InAlGaAs transition layer, an intrinsic InGaAs absorption layer, a gradient-doped P-type InGaAs absorption layer and a P-type InAlAs ohmic contact layer which are stacked from bottom to top. The intrinsic InGaAs absorption layer 8 and the N-type InAlAs ohmic contact layer 2 are both of a step structure so as to form a three-stage step structure of the photoelectric detector. According to the invention, through growing the SiNx antireflection film with the refractive index of 1.85 and the thickness of 210 nm on the light incident surface, the reflectivity of incident light can be less than 1%. For an optical signal with the wavelength of 1550 nm, the single light absorption quantum efficiency can reach 0.45.

The invention discloses an organic compound containing phenanthrene benzofuran, and an organic electroluminescent device, a display device and a lighting device comprising the same. The structural general formula of the organic compound is as shown in formula I; wherein L1 and L2 each independently represent any one of a single bond and an arylene group with a carbon atom number of C6-C12; ar1 represents a substituted or unsubstituted aryl group having a carbon atom number of C6-C60; ar2 represents a group represented by formula II, and ring A represents phenanthryl. By introducing a phenanthrene benzofuran substituent substituted by a specific site into the structure, the molecular high-energy linear state energy level can be adjusted while the molecular polarity is adjusted, and the carrier injection and energy level difference are improved, so that the internal quantum efficiency of the material is improved. And the phenanthrene benzofuran substituent at the specific site and anthryl present a rigid structure, which is beneficial for ordered arrangement of molecules according to a certain orientation, so that the light extraction efficiency is improved, and the device performance can be significantly improved. I; iI

The invention provides a sulfur-containing boron-nitrogen compound and application thereof, the sulfur-containing boron-nitrogen compound has a structure as shown in a formula I or a formula II, the boron-nitrogen compound has a narrow spectrum, and is used as a luminescent material for preparing a luminescent layer of an organic electroluminescent device, and the prepared organic electroluminescent device shows high efficiency and high stability, and can be used as a luminescent material for preparing a luminescent layer of the organic electroluminescent device. Meanwhile, the emission spectrum of the device is narrow, the electroluminescence belongs to emission from orange red light to near infrared light, and the highest external quantum efficiency of electroluminescence of the device is as high as 20% or above.

The invention discloses a method for testing short-circuit current of a solar cell. The method comprises the following steps: acquiring a first corresponding relation between the photoluminescence intensity of a standard cell under standard illumination intensity and the electroluminescence intensity of the standard cell under open-circuit voltage; providing a battery piece to be tested; irradiating partial areas of the first surface of the to-be-measured battery piece through a plurality of light sources with different wavelengths, and measuring to obtain bright area luminous intensity of a light receiving area and dark area luminous intensity of a non-light receiving area under the irradiation of the light sources with different wavelengths; according to the first corresponding relation and the luminous intensity of each bright area, obtaining basic electroluminescence intensity corresponding to the luminous intensity of each bright area; obtaining the equivalent external quantum efficiency under the irradiation of each wavelength light source according to the basic electroluminescence intensity and the dark space luminescence intensity corresponding to each wavelength light source; constructing a wavelength-equivalent external quantum efficiency curve; carrying out integral calculation on the wavelength-equivalent external quantum efficiency curve to obtain short-circuit current density, and calculating the short-circuit current of the battery piece to be measured according to the area of the first surface.

The invention is suitable for the technical field of light source temperature control, and provides a semiconductor light source control system and method and computer equipment, and the system comprises a semiconductor light source which comprises at least one light-emitting diode chip; the temperature sensor is used for monitoring the junction temperature of each light emitting diode chip in real time; and the control unit is used for predicting the junction temperature change of the light-emitting diode chip in a future period of time according to the signal of the temperature sensor, and adjusting the working current of the light-emitting diode chip according to the junction temperature change in the future period of time and the quantum efficiency of the light-emitting diode chip. And keeping the junction temperature of the light-emitting diode chip within a preset temperature range. According to the semiconductor light source, the working current of the semiconductor chip can be dynamically controlled, the light efficiency of the light emitting diode is improved to the greatest extent while overheating is prevented, and the overall performance of the semiconductor light source is improved.

The invention discloses a near-infrared two-region activatable probe as well as a preparation method and application thereof. The near-infrared second-region activatable probe comprises a near-infrared second-region fluorescent light-emitting unit and an analyte specific response unit; the near-infrared second-region light-emitting unit comprises a hemicyanine fluorophore structure; when the analyte specific response unit is chemically coupled with the near-infrared second-region light-emitting unit, the intramolecular charge transfer process of the light-emitting unit can be inhibited, and fluorescence quenching is caused; the analyte specific response unit is separated from the light-emitting unit after being subjected to specific reaction with an analyte, so that fluorescence is activated. The near-infrared two-region hemicyanine fluorophore selected by the near-infrared two-region activatable probe has higher fluorescence quantum efficiency, and the near-infrared two-region probe which can be activated by a specific analyte and has a high on-off ratio can be constructed by introducing an analyte specific response unit, so that high-temporal-spatial-resolution fluorescence detection of deep tissues can be realized; the method has a wide application prospect in the field of biomedical detection.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention relates to the technical field of organic electroluminescence, in particular to an organic compound, application of the organic compound and an organic electroluminescence device containing the compound, in particular to a novel thermal activation delayed fluorescent material and an organic electroluminescence device adopting the compound as a luminescent layer luminescent dye and a sensitizer. The compound disclosed by the invention has structures shown as a formula (1), a formula (2), a formula (3), a formula (4), a formula (5) and a formula (6). The compound disclosed by the invention has the advantages that the compound has higher photoluminescence quantum efficiency and faster reverse intersystem crossing rate when being used as a luminescent dye in an OLED (Organic Light Emitting Diode) device, and can show excellent device efficiency and device service life when being used as a luminescent layer sensitizer. The invention also protects the organic light-emitting device adopting the compound with the general formula. # imgabs0 #

The invention discloses a high-color-purity near ultraviolet heat exciton compound with circular polarization property and application thereof in preparation of a circular polarization organic electroluminescent device, and belongs to the technical field of organic photoelectric materials. The electroluminescent material disclosed by the invention is a high-color-purity near ultraviolet heat exciton compound with circular polarization property, and two pairs of near ultraviolet enantiomers are successfully designed and synthesized by combining a chiral group binaphthol, a weak donor dibenzothiophene, dibenzofuran and an acceptor cyanophenyl; the compounds show obvious circular polarization luminescence property and high fluorescence quantum yield. The electroluminescent devices prepared based on the enantiomers all show near ultraviolet emission, CIE coordinates are respectively (0.168, 0.040) and (0.166, 0.040), and the external quantum efficiencies are respectively 4.3% and 3.4%. According to the near ultraviolet heat exciton material, a new visual angle is provided for developing the near ultraviolet heat exciton material with circular polarization luminescence and high color purity at the same time, and 3D and wide color gamut display can be directly achieved in the future.

The invention provides a gallium nitride-based light emitting diode epitaxial structure, a preparation method thereof and an LED chip. In the epitaxial structure, a multi-stage electron-phonon scattering structure is designed for the situations of electron acceleration and hot electron transition caused by electron ballistic transport and a quantum stark effect structure in a quantum well, the forbidden band width of a quantum well layer in a multi-quantum well barrier layer is gradually increased, and an InGaN step structure is used for inhibiting electron leakage under different situations, so that the quantum efficiency is improved. And the external quantum efficiency under large current is effectively improved.

The invention discloses cyan borosilicate glass and a preparation method thereof, and belongs to the field of optical materials. The borosilicate glass comprises the following components in percentage by weight: 20-45 mol% of SiO2; b2O3: 25 to 55 mol%; 20 to 35 mol% of SrO; eu < 2 > O < 3 >: 0.05 to 2.5 mol%; wherein the sum of the three components of SiO2, B2O3 and SrO is 100 mol%; wherein the external doping concentration or the internal doping concentration of the rare earth ions is 0.05-2.5 mol% of the sum of the three components of SiO2, B2O3 and SrO. The invention also discloses a method for preparing the borosilicate glass, the preparation temperature of the green borosilicate glass does not exceed 1460 DEG C, and Eu < 3 + > ions are reduced into Eu < 2 + > ions in an air atmosphere. The excitation wavelength of the cyan borosilicate glass is in the range of 230-420 nm, the cyan borosilicate glass is well matched with the characteristic wavelength of an existing commercial semiconductor chip, the quantum efficiency reaches up to 88.57% under excitation of 300 nm, the emission wavelength ranges from 470 nm to 500 nm under excitation of 410 nm, the defect of the cyan color in the full spectrum is well overcome, and the blue borosilicate glass can be applied to the field of semiconductor chips. And the method can be widely applied to the field of full-spectrum white-light LED illumination.