691 results about "Quantum efficiency" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses an organic compound containing phenanthrene benzofuran, and an organic electroluminescent device, a display device and a lighting device comprising the same. The structural general formula of the organic compound is as shown in formula I; wherein L1 and L2 each independently represent any one of a single bond and an arylene group with a carbon atom number of C6-C12; ar1 represents a substituted or unsubstituted aryl group having a carbon atom number of C6-C60; ar2 represents a group represented by formula II, and ring A represents phenanthryl. By introducing a phenanthrene benzofuran substituent substituted by a specific site into the structure, the molecular high-energy linear state energy level can be adjusted while the molecular polarity is adjusted, and the carrier injection and energy level difference are improved, so that the internal quantum efficiency of the material is improved. And the phenanthrene benzofuran substituent at the specific site and anthryl present a rigid structure, which is beneficial for ordered arrangement of molecules according to a certain orientation, so that the light extraction efficiency is improved, and the device performance can be significantly improved. I; iI

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention discloses a light conversion film based on a benzotriazole compound as well as a preparation method and application of the light conversion film. The benzotriazole compound is a compound as shown in a formula I, and the definition of each group in the formula I is described in the specification. According to the invention, cyano modification is carried out on the benzotriazole compound used as the light conversion agent, so that the transmission of ultraviolet light is further reduced, the external quantum efficiency response of the heterojunction cell is improved, and the power of the assembly is improved.

A light source a backplane including drive circuits formed thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane, and an array of micro-lenses on the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a mesa structure that includes a p-doped semiconductor layer, an n-doped semiconductor layer, an active region between the p-doped semiconductor layer and the n-doped semiconductor layer, and a dielectric layer underneath the p-doped semiconductor layer or the n-doped semiconductor layer and surrounding the active region. In some embodiments, the center of the active region of a micro-LED of the array of micro-LEDs is horizontally offset from the center of the mesa structure of the micro-LED and the center of a corresponding micro-lens of the array of micro-lenses.

The invention belongs to the technical field of photocatalytic oxidation of gaseous alkanes, and particularly relates to a method and system for photocatalytic oxidation of gaseous alkanes, and the method comprises the following steps: under illumination, enabling a photocatalyst, bubbles containing gaseous alkanes and chlorine-containing active substances to react at an interface of a two-phase system containing an organic phase and a water phase to generate an oxidation product, the oxidation product comprises one or more of acid, alcohol and aldehyde, and the organic phase can dissolve the chlorine-containing active substance. The method provided by the invention is beneficial to improving the generation rate of oxidation products and the apparent light quantum efficiency of photocatalytic reaction.

The application belongs to the technical field of fluorescent material synthesis, and particularly relates to a blue fluorescent powder with self-activation effect and a preparation method thereof, the chemical formula of the blue fluorescent powder is Li2Mg2W2O9 or Li2Zn2W2O9; the preparation comprises the following steps: 1) according to the chemical proportion of the fluorescent powder, magnesium / zinc source, lithium source and tungsten source are weighed and uniformly ground; 2) the uniformly ground mixed powder is placed into an alumina crucible, sintering is carried out, and the product is fully reacted after heat preservation for a period of time; 3) the product is uniformly ground again after cooling, and the blue fluorescent powder with self-activation effect is obtained. The application utilizes the special lattice structure of the substrate, and obtains the blue fluorescent powder with self-activation effect under an air atmosphere; the generated product has high purity, simple synthesis conditions, low cost and is easy to be prepared on a large scale; the prepared fluorescent powder has a high internal quantum efficiency of 68.7%, high luminous intensity and unique blue light emission characteristics.

Provides a type of gold(III) complex supported by tetradentate ligand having a structure of formula (I). The light-emitting device prepared by using the complex as a light-emitting layer material or dopant in the light-emitting device has a high external quantum efficiency, and a low efficiency roll-off. In addition, the preparation process of the tetradentate ligand provided in the present disclosure is simple and the yield is satisfactory. More importantly, the preparation reaction of the material is controllable and stable, and has a good reproducibility, and is suitable for industrial application.

The invention belongs to the technical field of luminescence and display, and particularly relates to a D-A type green light TADF material and application thereof in OLEDs. The luminescent material comprises an oxygen bridge triphenylboron acceptor unit and oxygen bridge triphenylamine which are used as donor units, and a green light TADF material is constructed through simple coupling. The rigid large plane structure of the material limits rotation of a benzene ring, vibration relaxation of a condensed ring structure is reduced, and the photoluminescence efficiency as high as 90% is obtained. Research results show that the maximum emission peak of the device is 518 nm and the maximum external quantum efficiency (EQE) of the device is 37.8% under different doping concentrations when the OLEDs are processed by the solution, especially under the doping concentration of 5-100%, the electrogenerated emission peak change of the device is small, the EQE of 30% or above is kept, the excellent concentration quenching inhibition performance is shown, and the application prospect is attractive.

The present invention relates to an organic light-emitting device employing, as a host of a light emission layer, an anthracene derivative compound having a characteristic structure by introduction of a benzofuran structure into the anthracene backbone, and as a dopant of the light emission layer, a polycyclic compound having a characteristic structure. The organic light-emitting device according to the present invention is an organic light-emitting device with significantly improved external quantum efficiency and can be advantageously utilized not only for lighting devices but also for various display devices, such as flat, flexible, and wearable displays.

The invention provides a preparation method of a red light perovskite quantum dot with a core-shell structure, and belongs to the technical field of quantum dot preparation. According to the method, a CsPbI3 quantum dot coarse solution and a cadmium sulfide precursor solution are mixed, stirred and heated to a certain temperature, cadmium sulfide grows on the surface of the quantum dot in an epitaxial mode, the red light CsPbI3 / CdS core-shell quantum dot is prepared, the formation of a core-shell structure is beneficial to passivation of defects on the surface of the quantum dot, and meanwhile ion migration and Auger recombination of the quantum dot are inhibited. The invention provides a solution for preparing the red light perovskite quantum dot light-emitting diode with high external quantum efficiency, long service life and low efficiency roll-off.

The invention provides an image sensor pixel unit with a polarization response characteristic light trapping structure and a preparation method of the image sensor pixel unit. The image sensor pixel unit comprises a semiconductor substrate, a multi-layer structure arranged on the substrate and a polarization response unit. The multi-layer structure comprises an anti-reflection layer, a filling and leveling layer and a micro-lens layer. The polarization response unit adopts an all-dielectric sub-wavelength grating based on a backscattering technology, and the polarization response unit and the deep trench isolation structure are synchronously formed by adopting the same process, so that photoelectric isolation between pixels is realized, and a polarization selection function is also realized. The anti-reflection layer is a multi-layer dielectric film stack, and interface reflection is effectively restrained. By optimizing the design of a polarization selection-transmission-convergence cooperative structure, polarization selection and light enhancement functions are integrated, an all-dielectric material system is adopted to be completely compatible with a CMOS (complementary metal oxide semiconductor) process, and quantum efficiency is remarkably improved while high-efficiency polarization detection is realized.

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

The invention relates to the technical field of semiconductors, and provides a boron-nitrogen-containing organic compound and an organic electroluminescent device containing the same. The compound serving as a doping material has high fluorescence quantum efficiency, the rigidity of a mother nucleus structure is enhanced after a five-membered heterocycle is fused at a central benzene ring, vibration coupling is effectively inhibited, FWHM is narrowed, and the luminous efficiency of a device is improved; in addition, the rigidity of the material is enhanced, so that the evaporation decomposition temperature is increased, evaporation decomposition of the material is inhibited, and the service life of the device is effectively prolonged.

The invention discloses a blue-light perovskite light-emitting diode based on a hydrogen bond network and a preparation method thereof, 3-(5-fluoropyridine-2-yl) acrylic acid hydrochloride molecules are added into a perovskite precursor solution, non-radiative recombination is reduced by passivating defects, and the molecules cooperate with ligands and octahedrons to construct the hydrogen bond network in the crystallization process, so that the blue-light perovskite light-emitting diode based on the hydrogen bond network is obtained. The stability of the octahedral framework is enhanced, ion migration is effectively inhibited, the high-efficiency and high-stability blue-light PeLED is finally obtained, and the external quantum efficiency and the operation stability of the blue-light PeLED are remarkably improved.

The invention belongs to the field of functional nano materials and optical imaging, and particularly relates to a gold nanocluster and a preparation method and application thereof. The surface of the gold nanocluster contains a sulfydryl ligand A and a sulfydryl ligand B, the sulfydryl ligand A is ATT, and the sulfydryl ligand B is a sulfydryl ligand containing arginine; fluorescence quantum efficiency and electron transfer efficiency are synergistically enhanced on the basis of interaction of hydrogen bonds in the gold nanoclusters, the ultra-small luminous gold nanoclusters protected by double ligands are synthesized, the electrochemical luminescence quantum efficiency of the ultra-small luminous gold nanoclusters is up to 13.0% and is 4.2 times of that of a standard compound terpyridyl ruthenium in the field of electrochemical luminescence, and the ultra-small luminous gold nanoclusters are high in electrochemical luminescence quantum efficiency. An electrochemical luminescence transition area can be narrowed by 10 times compared with a terpyridyl ruthenium imaging system, and zero-thickness ECL luminescent layer cell high-resolution imaging can be realized; good application prospects are realized in the fields of fluorescence detection, electrochemical luminescence detection, fluorescence imaging, electrochemical luminescence imaging and the like.

The invention discloses a passivation contact cell with a selective Poly structure, a preparation method of the passivation contact cell and a photovoltaic module. The passivation contact cell comprises an N-type silicon wafer substrate, a metal contact area and a non-metal contact area, wherein the metal contact area is sequentially provided with a phosphorus diffusion layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a back surface passivation anti-reflection film from inside to outside; the non-metal contact region comprises a third region with phosphorus diffusion and a fourth region with a recess on the silicon substrate, the third region is sequentially provided with a phosphorus diffusion layer and a back surface passivation anti-reflection film from inside to outside, and the fourth region is provided with a back surface passivation anti-reflection film on the surface of the recess structure. According to the passivation contact battery, the transverse transmission of back current can be improved, the filling factor of the battery is improved, and the Voc of the battery can be prevented from being greatly reduced. And the optical performance of the cell can be remarkably improved, and the long-wave quantum efficiency is improved, so that the current and double-sided rate of the cell are improved.

The invention relates to the technical field of micro-nano processing of semiconductor devices, in particular to an InAs / GaSb class-II superlattice mesa wet etching solution and a using method thereof, the etching solution is an aqueous solution comprising citric acid, phosphoric acid and hydrogen peroxide, the citric acid is citric acid monohydrate, the mass concentration of the phosphoric acid is 85%, and the mass concentration of the hydrogen peroxide is 30%. By optimizing the proportion of the components of the corrosive liquid and introducing an adjustable corrosion time sequence and a post-treatment technique, high repeatability and high uniformity of the corrosion process can be realized on the premise of keeping the intrinsic electrical properties of the material, the morphology quality of the mesa structure can be remarkably improved, and the smooth and low-damage mesa side wall and surface can be obtained. The method lays a reliable process foundation for preparing a high-performance InAs / GaSb class-II super-crystal-based infrared detector, is particularly beneficial to suppressing electric leakage of the side wall of a device, reduces dark current, and finally improves the quantum efficiency and imaging performance of the device.

A plurality of vertically arranged layers of diffusion structures are included above a photodiode of a pixel sensor. Each layer of diffusion structures distributes incident light by refraction to provide a greater amount of distribution of the incident light than a single layer of diffusion structures. For example, a top layer of diffusion structures may distribute incident light by refraction, and a bottom layer of diffusion structures may further distribute the distributed incident light from the top layer of diffusion structures before the incident light enters the photodiode of the pixel sensor. This increases the length of the path of travel of photons of the incident light, thereby increasing the likelihood that the photons will be absorbed in the photodiode. Thus, the plurality of vertically arranged layers of diffusion structures may further increase the quantum efficiency (QE) of the pixel sensor.

The invention relates to the technical field of semiconductor light emitting diodes, and discloses a composite patterned substrate and a preparation method thereof. The preparation method comprises the following steps: preparing a SiO2 film layer on a substrate; coining glue is prepared on the SiO2 film layer; transferring the pattern of the soft template to the SiO2 film layer by using a nanoimprint technology; performing etching treatment on the SiO2 film layer to form a graphic structure with a preset morphology, and etching to remove part of the substrate material to form a pit to obtain a patterned substrate; preparing an AlN layer on the substrate, filling the pit with the AlN layer, and covering the surface of the graphic structure; carrying out photoetching treatment and etching treatment on the AlN layer, so that the AlN layer is filled in the pit and covers the side surface of a part of the pattern structure; and carrying out annealing treatment, and removing the residual photoresist to obtain the composite patterned substrate. By implementing the preparation method provided by the invention, the obtained composite patterned substrate can improve the crystal quality of the epitaxial layer, thereby improving the internal quantum efficiency and final brightness of the chip.

The invention aims to provide a preparation method and application of a blue-light CsPbBr3 perovskite quantum dot, and belongs to the technical field of quantum dot preparation. According to the method, 1-ethyl-3-methylimidazolium hexafluorophosphate molecules are introduced to the surfaces of the quantum dots by using a heterogeneous ligand exchange strategy, and passivation of surface defects of the quantum dots and inhibition of Auger recombination are realized at the same time, so that the optical performance and stability of the quantum dots are improved, and the photoluminescence quantum yield is increased from 78% to 92%; according to a blue light emitting diode prepared based on the CsPbBr3 quantum dot, the maximum external quantum efficiency of 20.02% is achieved under the brightness of 6441 cd / m < 2 >, and the external quantum efficiency of nearly 19% is still achieved under the high brightness of nearly 10000 cd / m < 2 >; under the initial brightness of 106 cd / m < 2 >, the running half-life period of about 700 minutes is obtained; the preparation of the blue-light perovskite quantum dot light-emitting diode with high external quantum efficiency, high brightness, long service life and low efficiency roll-off is realized.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

The application discloses a vertical cavity surface emitting semiconductor laser based on a lateral epitaxial technology and a preparation method. The core of the structure is to solve the problem of presetting a lower DBR through the lateral epitaxial technology, to preset the DBR first, to open a window on the DBR, to grow the functional area of the laser on the upper side of the DBR through the lateral epitaxial technology, to complete the preparation of the lower DBR, and then to prepare the upper DBR and the metal electrodes on the two sides through common processes, so that the vertical cavity surface emitting laser is formed. The direction of the electric injection is perpendicular to the direction of the laser emission, and the influence of the current spreading layer of the ultraviolet band VCSEL on the light field absorption can be avoided. The application is favorable for reducing the damage to the device, improving the yield and the device performance, well utilizing the high-quality material area grown through the lateral epitaxial technology, improving the crystal quality, improving the light emitting efficiency and the service life, and the electric field direction is the non-polarized direction of the material, so that the quantum confinement Stark effect can be effectively reduced, and the reduction of the quantum efficiency and the wavelength drift of the device under a large voltage can be inhibited.

The invention discloses a high-quantum-efficiency medium wave-very long wave double-color infrared detector and a preparation method thereof, and relates to the technical field of semiconductors. A substrate layer, a buffer layer, a medium-wave highly-doped layer, a medium-wave absorption layer, a very-long-wave absorption layer, a very-long-wave barrier layer and a very-long-wave highly-doped layer are sequentially stacked from bottom to top through a molecular beam epitaxial growth process; and the multi-layer structure is further partially etched to form a mesa structure and an exposed medium-wave highly-doped layer, an upper electrode is arranged on one side, close to the exposed medium-wave highly-doped layer, of the very-long-wave highly-doped layer, and a lower electrode is arranged on the exposed medium-wave highly-doped layer, so that the medium-wave-very-long-wave two-color infrared detector with high quantum efficiency is manufactured. The dual-band quantum efficiency and the anti-interference capability of the infrared detector are obviously improved, the preparation process parameters are accurate and controllable, and the infrared detector is suitable for high-precision infrared detection scenes such as security and protection, remote sensing and medical treatment.

The application discloses a kind of high level dipole orientation tetraphenyl benzene derivatives and its preparation method and application, the tetraphenyl benzene derivative has structure shown in formula (I):In formula (I), any two of R1, R2, R3, R4 Four groups are each independently selected from N-containing electron-donating group, and the other two are each independently selected from electron-withdrawing group.The tetraphenyl benzene derivative is prepared using two-step suzuki coupling reaction.The tetraphenyl benzene derivative of the application has excellent solid-state light emitting efficiency and high molecular level dipole orientation, and can be used as non-doped light-emitting layer to prepare non-doped blue light organic electroluminescent device with high efficiency, low degree of efficiency roll-off, low start voltage, with maximum external quantum efficiency reaching 8.32%, which is greatly improved compared with prior art, and has wide application prospect in the field of organic optoelectronics.

The application belongs to the technical field of luminescent materials, and particularly relates to a nickel ion doped fluoride near-infrared two-region long-wave luminescent nano probe and a preparation method thereof, wherein the nano probe comprises a fluoride nanocrystal matrix and transition metal nickel ions as a luminescent center, or a core-shell structure nano probe formed by taking the above-mentioned substances as a shell layer and being externally coated with an inert shell layer or a homogenous epitaxial layer. The probe realizes wide-range regulation of an emission peak in a 1300nm to 2150nm near-infrared two-region long-wave band; through core-shell structure design and inert shell layer coating, surface defects are effectively passivated, luminescent quantum efficiency is significantly improved, and particle size is precisely controlled. Through nickel ion doping and crystal field regulation strategies, the application develops a new type of non-lanthanide near-infrared two-region long-wave luminescent material; the application has unique dual-wavelength excitation characteristics and wideband emission characteristics, and has wide application prospects in multi-channel biological detection and imaging analysis.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

The data processing device is a signal processing device that processes outputs of photomultiplier tubes configuring a flow cytometer system and includes a processor, in which the processor is configured to acquire intensity signals of the photomultiplier tubes based on signal light generated by flow cytometry using the flow cytometer system, calculate a virtual photon quantity of the signal light incident on the photomultiplier tubes by dividing a digital value of the intensity signal by a gain of the photomultiplier tubes and signal light quantum efficiency, and execute data analysis based on the virtual photon quantity of the signal light.

The application discloses an ITO surface roughening treatment method, comprising the following steps: preparing a GaN wafer, wherein the surface of the GaN wafer is covered with an ITO film layer; performing ion beam bombardment on the ITO film layer by using a preset ion dose of a low-energy ion beam, and meanwhile, the GaN wafer is self-rotated at a preset speed, so that a regularly arranged point structure of nanometer size is formed on the surface of the ITO film layer, and an ITO film layer after surface roughening is obtained. The application has the advantages of simple operation, low cost, high production efficiency, and the like, and can effectively improve the external quantum efficiency of an LED chip and improve the light-emitting brightness of the LED.

The invention belongs to the technical field of microcrystalline glass materials, and particularly discloses rare earth doped silicate system high-crystallinity transparent microcrystalline glass and a preparation method thereof. The microcrystalline glass is prepared from the following raw materials: black talcum powder, CaO, AlF3, YF3, rare earth ions, graphite powder, Si3N4, a clarifying agent, micron-sized seed crystals and the like through a high-temperature melting process and controllable nucleation-crystallization. The preparation method is simple, the used raw materials are rich, the preparation process is simple, and the prepared high-crystallinity transparent microcrystalline glass can be effectively excited by 420 nm purple light and has the characteristics of high crystallinity, high transmittance, high luminous efficiency, excellent thermal quenching resistance and the like. A main crystal phase is CaAl2Si2O8 and a small amount of YF3, the crystallinity is larger than or equal to 70 vol.%, the transmittance of a 1 mm sample is larger than or equal to 80%, the emission peak value is adjustable between 480 nm and 520 nm, the internal quantum efficiency is larger than or equal to 80%, the luminous intensity at the temperature of 150 DEG C is 85% or above of the luminous intensity at the room temperature, and the material can be widely applied to the fields of white light illumination, screen display and the like.