1077 results about "Quantum efficiency" patented technology

The invention discloses a high-power intermediate infrared fiber laser. The fiber laser is composed of a first pumping source, a second pumping source, a pumping beam combiner, a high-reflectivity fiber grating, a low erbium-doped fluoride fiber, a low-reflectivity fiber grating, a cladding light filter, a fiber end cap, a collimating lens and a dichroscope. The mode of combining erbium ion ground state transition achieved through fiber core pumping and erbium ion excited state transition achieved through cladding pumping is adopted, mid-infrared laser upper energy level particle number accumulation is obtained, and meanwhile laser lower energy level particles are effectively consumed through the cladding pumping transition process. And the population inversion state of the laser system is kept, and the particle circulation rate and the quantum efficiency from the pump light to the intermediate infrared laser are improved, so that the generation of high-power and high-efficiency intermediate infrared fiber laser is realized.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention is suitable for the technical field of inorganic luminescent materials, and provides a fluorescent powder material based on a double-perovskite structure and a preparation method and application thereof. The general chemical formula of the fluorescent powder is Ca2AlNbO6: xEu < 3 + >, wherein x is a molar fraction of 0.06 to 0.30; the excitation spectrum coverage range of the fluorescent powder under the condition of monitoring the emission wavelength of 615 nm is 260-500 nm, and the emission main peak is located at 615 nm; when x is equal to 0.18, the quantum efficiency under the excitation of 396nm ultraviolet light is greater than or equal to 91%, and the red light emission ratio is greater than or equal to 85%. According to the invention, Ca2AlNbO6 double perovskite is taken as a substrate, and a red fluorescent powder material with wide-spectrum excitation and high quantum efficiency is designed through Eu < 3 + > high-concentration doping and local symmetry regulation and control design engineering, so that the characteristics of high quantum efficiency, efficient red light emission, wide-spectrum excitation and excellent concentration quenching resistance are realized.

The invention provides a preparation method of rare earth ion heavily-doped luminescent glass and application of a light source. The rare earth ion heavily-doped luminescent glass comprises the following components in percentage by mass: 50-68% of black talcum powder, 10-25% of LiF, 10-25% of NaF, 10-25% of CaF2, an externally-doped rare earth compound accounting for 15-25% of the total mass of other raw materials (black talcum powder + LiF + NaF + CaF2), and an externally-doped clarifying agent accounting for 0.5-2% of the total mass of other raw materials (black talcum powder + LiF + NaF + CaF2). The preparation raw materials of the luminescent glass are easy to obtain and low in price, the process is simple, and industrial production is easy; the emission peak of the obtained rare earth doped luminescent glass under the excitation of purple light / ultraviolet light is 450-750 nm, the internal quantum efficiency is greater than or equal to 85%, and the luminous intensity at 150 DEG C is more than 85% of the luminous intensity at room temperature. A light source packaged by the prepared luminescent glass has the characteristics of warm white light output, low color temperature (CCTlt, 4500K), high color rendering index (CRIGt, 90) and high lumen efficiency (LEgt, 851m / W).

The invention discloses an organic compound containing phenanthrene benzofuran, and an organic electroluminescent device, a display device and a lighting device comprising the same. The structural general formula of the organic compound is as shown in formula I; wherein L1 and L2 each independently represent any one of a single bond and an arylene group with a carbon atom number of C6-C12; ar1 represents a substituted or unsubstituted aryl group having a carbon atom number of C6-C60; ar2 represents a group represented by formula II, and ring A represents phenanthryl. By introducing a phenanthrene benzofuran substituent substituted by a specific site into the structure, the molecular high-energy linear state energy level can be adjusted while the molecular polarity is adjusted, and the carrier injection and energy level difference are improved, so that the internal quantum efficiency of the material is improved. And the phenanthrene benzofuran substituent at the specific site and anthryl present a rigid structure, which is beneficial for ordered arrangement of molecules according to a certain orientation, so that the light extraction efficiency is improved, and the device performance can be significantly improved. I; iI

The invention provides a sulfur-containing boron-nitrogen compound and application thereof, the sulfur-containing boron-nitrogen compound has a structure as shown in a formula I or a formula II, the boron-nitrogen compound has a narrow spectrum, and is used as a luminescent material for preparing a luminescent layer of an organic electroluminescent device, and the prepared organic electroluminescent device shows high efficiency and high stability, and can be used as a luminescent material for preparing a luminescent layer of the organic electroluminescent device. Meanwhile, the emission spectrum of the device is narrow, the electroluminescence belongs to emission from orange red light to near infrared light, and the highest external quantum efficiency of electroluminescence of the device is as high as 20% or above.

The invention discloses a method for testing short-circuit current of a solar cell. The method comprises the following steps: acquiring a first corresponding relation between the photoluminescence intensity of a standard cell under standard illumination intensity and the electroluminescence intensity of the standard cell under open-circuit voltage; providing a battery piece to be tested; irradiating partial areas of the first surface of the to-be-measured battery piece through a plurality of light sources with different wavelengths, and measuring to obtain bright area luminous intensity of a light receiving area and dark area luminous intensity of a non-light receiving area under the irradiation of the light sources with different wavelengths; according to the first corresponding relation and the luminous intensity of each bright area, obtaining basic electroluminescence intensity corresponding to the luminous intensity of each bright area; obtaining the equivalent external quantum efficiency under the irradiation of each wavelength light source according to the basic electroluminescence intensity and the dark space luminescence intensity corresponding to each wavelength light source; constructing a wavelength-equivalent external quantum efficiency curve; carrying out integral calculation on the wavelength-equivalent external quantum efficiency curve to obtain short-circuit current density, and calculating the short-circuit current of the battery piece to be measured according to the area of the first surface.

The invention discloses a near-infrared two-region activatable probe as well as a preparation method and application thereof. The near-infrared second-region activatable probe comprises a near-infrared second-region fluorescent light-emitting unit and an analyte specific response unit; the near-infrared second-region light-emitting unit comprises a hemicyanine fluorophore structure; when the analyte specific response unit is chemically coupled with the near-infrared second-region light-emitting unit, the intramolecular charge transfer process of the light-emitting unit can be inhibited, and fluorescence quenching is caused; the analyte specific response unit is separated from the light-emitting unit after being subjected to specific reaction with an analyte, so that fluorescence is activated. The near-infrared two-region hemicyanine fluorophore selected by the near-infrared two-region activatable probe has higher fluorescence quantum efficiency, and the near-infrared two-region probe which can be activated by a specific analyte and has a high on-off ratio can be constructed by introducing an analyte specific response unit, so that high-temporal-spatial-resolution fluorescence detection of deep tissues can be realized; the method has a wide application prospect in the field of biomedical detection.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention discloses a light conversion film based on a benzotriazole compound as well as a preparation method and application of the light conversion film. The benzotriazole compound is a compound as shown in a formula I, and the definition of each group in the formula I is described in the specification. According to the invention, cyano modification is carried out on the benzotriazole compound used as the light conversion agent, so that the transmission of ultraviolet light is further reduced, the external quantum efficiency response of the heterojunction cell is improved, and the power of the assembly is improved.

A light source a backplane including drive circuits formed thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane, and an array of micro-lenses on the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a mesa structure that includes a p-doped semiconductor layer, an n-doped semiconductor layer, an active region between the p-doped semiconductor layer and the n-doped semiconductor layer, and a dielectric layer underneath the p-doped semiconductor layer or the n-doped semiconductor layer and surrounding the active region. In some embodiments, the center of the active region of a micro-LED of the array of micro-LEDs is horizontally offset from the center of the mesa structure of the micro-LED and the center of a corresponding micro-lens of the array of micro-lenses.

The invention belongs to the technical field of photocatalytic oxidation of gaseous alkanes, and particularly relates to a method and system for photocatalytic oxidation of gaseous alkanes, and the method comprises the following steps: under illumination, enabling a photocatalyst, bubbles containing gaseous alkanes and chlorine-containing active substances to react at an interface of a two-phase system containing an organic phase and a water phase to generate an oxidation product, the oxidation product comprises one or more of acid, alcohol and aldehyde, and the organic phase can dissolve the chlorine-containing active substance. The method provided by the invention is beneficial to improving the generation rate of oxidation products and the apparent light quantum efficiency of photocatalytic reaction.

The invention relates to the technical field of semiconductor light-emitting devices, and particularly discloses an epitaxial structure for improving the internal quantum efficiency of a green Micro LED. The epitaxial structure comprises a substrate, and a buffer layer, an undoped GaN layer, an n-type GaN layer, a stress release layer, an active layer, a low-temperature Mg heavily-doped GaN layer, an electron barrier layer, a p-type GaN layer and a p-type GaN contact layer which are sequentially arranged on the substrate. The active layer comprises a plurality of periods of InGaN quantum well layers and an InAlGaN / GaN superlattice quantum barrier layer alternating structure, and a CAP layer formed by an AlGaN / GaN superlattice is arranged behind each quantum well layer. By adopting a wide-well narrow-barrier structure, a superlattice CAP layer for neutralizing a polarization electric field and a quaternary InAlGaN barrier structure for lattice matching and hole injection enhancement, multiple regulation and control of a polarization field, dislocation density and hole transport are realized, the internal quantum efficiency of a green-light Micro LED is remarkably improved, and the green-light Micro LED epitaxial structure is suitable for epitaxial preparation of a high-performance Micro LED chip.

The application belongs to the technical field of fluorescent material synthesis, and particularly relates to a blue fluorescent powder with self-activation effect and a preparation method thereof, the chemical formula of the blue fluorescent powder is Li2Mg2W2O9 or Li2Zn2W2O9; the preparation comprises the following steps: 1) according to the chemical proportion of the fluorescent powder, magnesium / zinc source, lithium source and tungsten source are weighed and uniformly ground; 2) the uniformly ground mixed powder is placed into an alumina crucible, sintering is carried out, and the product is fully reacted after heat preservation for a period of time; 3) the product is uniformly ground again after cooling, and the blue fluorescent powder with self-activation effect is obtained. The application utilizes the special lattice structure of the substrate, and obtains the blue fluorescent powder with self-activation effect under an air atmosphere; the generated product has high purity, simple synthesis conditions, low cost and is easy to be prepared on a large scale; the prepared fluorescent powder has a high internal quantum efficiency of 68.7%, high luminous intensity and unique blue light emission characteristics.

Provides a type of gold(III) complex supported by tetradentate ligand having a structure of formula (I). The light-emitting device prepared by using the complex as a light-emitting layer material or dopant in the light-emitting device has a high external quantum efficiency, and a low efficiency roll-off. In addition, the preparation process of the tetradentate ligand provided in the present disclosure is simple and the yield is satisfactory. More importantly, the preparation reaction of the material is controllable and stable, and has a good reproducibility, and is suitable for industrial application.

The invention discloses a multilayer composite patterned substrate and a preparation method and application thereof, and relates to the technical field of substrate material preparation. The invention provides a multi-layer composite patterned substrate which comprises a sapphire bottom layer, a periodic pattern layer and a reflecting material layer. The periodic pattern layer is arranged on the surface of the sapphire bottom layer; the periodic pattern layer is provided with a window area, and the window area is a non-coverage area of the periodic pattern layer on the sapphire bottom layer; a reflecting material layer is arranged on the surface of a non-window area of the periodic pattern layer; and an epitaxial layer can be additionally arranged between the sapphire bottom layer and the periodic pattern layer. According to the invention, the surface emergent light of the LED device is obviously increased, so that the external quantum efficiency is improved, and meanwhile, the problem that the GaN growth is influenced by a reflecting layer material (mainly a metal reflecting mirror material) is solved.

The invention discloses an on-chip integrated light field encoding device and a design method and application thereof. The light field encoding device comprises a substrate layer, an induction layer and an encoding layer. The substrate layer has a first surface and a second surface opposite to each other, the sensing layer is arranged on the first surface, and the coding layer is arranged on the second surface; the coding layer comprises a plurality of coding areas, and when the target light penetrates through the coding layer, modulation responses of the coding areas to the target light are different; the sensing layer has a patterning sensing function and can sense the modulation state of transmission light which transmits the coding layer and the substrate layer in different areas. Displacement errors caused by system-level integration alignment can be reduced, the preparation process difficulty and the preparation cost are reduced, a large amount of optical loss in a traditional optical system can be avoided, the light utilization efficiency of an imaging chip is greatly improved, particularly, the working stability of the imaging chip is improved, and the optical system is suitable for large-scale popularization and application. And the imaging influence caused by insufficient quantum efficiency of a partial wave band detector can be reduced.

The invention belongs to the technical field of luminescence and display, and particularly relates to a D-A type green light TADF material and application thereof in OLEDs. The luminescent material comprises an oxygen bridge triphenylboron acceptor unit and oxygen bridge triphenylamine which are used as donor units, and a green light TADF material is constructed through simple coupling. The rigid large plane structure of the material limits rotation of a benzene ring, vibration relaxation of a condensed ring structure is reduced, and the photoluminescence efficiency as high as 90% is obtained. Research results show that the maximum emission peak of the device is 518 nm and the maximum external quantum efficiency (EQE) of the device is 37.8% under different doping concentrations when the OLEDs are processed by the solution, especially under the doping concentration of 5-100%, the electrogenerated emission peak change of the device is small, the EQE of 30% or above is kept, the excellent concentration quenching inhibition performance is shown, and the application prospect is attractive.

The invention discloses a high-power organic light emitting diode. The organic light-emitting material suitable for a high-power organic light-emitting diode is obtained by testing the triplet exciton lifetime of the organic light-emitting material. The high-power organic light-emitting diode comprises an optical radiation layer, the optical radiation layer comprises an organic light-emitting material, and the triplet exciton lifetime of the organic light-emitting material is smaller than or equal to 1 microsecond. The high-power organic light-emitting diode provided by the invention has an extremely low efficiency roll-off effect, and when the external quantum efficiency is reduced to half of the maximum value, the driving current density of the device is greater than 3 amperes / cm < 2 >; the laser has the characteristics of high radiation exitance (greater than 15 milliwatts / cm < 2 >), continuously adjustable spectrum, simple structure, long service life, capability of solution processing, capability of large-area processing and the like.

The present invention relates to an organic light-emitting device employing, as a host of a light emission layer, an anthracene derivative compound having a characteristic structure by introduction of a benzofuran structure into the anthracene backbone, and as a dopant of the light emission layer, a polycyclic compound having a characteristic structure. The organic light-emitting device according to the present invention is an organic light-emitting device with significantly improved external quantum efficiency and can be advantageously utilized not only for lighting devices but also for various display devices, such as flat, flexible, and wearable displays.

The invention provides a preparation method of a red light perovskite quantum dot with a core-shell structure, and belongs to the technical field of quantum dot preparation. According to the method, a CsPbI3 quantum dot coarse solution and a cadmium sulfide precursor solution are mixed, stirred and heated to a certain temperature, cadmium sulfide grows on the surface of the quantum dot in an epitaxial mode, the red light CsPbI3 / CdS core-shell quantum dot is prepared, the formation of a core-shell structure is beneficial to passivation of defects on the surface of the quantum dot, and meanwhile ion migration and Auger recombination of the quantum dot are inhibited. The invention provides a solution for preparing the red light perovskite quantum dot light-emitting diode with high external quantum efficiency, long service life and low efficiency roll-off.

The invention provides a light conversion agent, an adhesive film composition, a wavelength conversion adhesive film and a photovoltaic module. The chemical structural formula of the light conversion agent is at least one of formulas I-IV. The imidazole derivative with the specific structure is used as the light conversion agent, has good absorption in an ultraviolet region, is wide in range, almost has no absorption in a visible region, has good visible light permeability, and can better meet the difference requirements of different types of photovoltaic devices on wavelength conversion adhesive films, and the main absorption part is more than 350nm. Furthermore, the light conversion agent has very high absolute light-emitting quantum efficiency, the emission wavelength is basically larger than 430 nm, and the wavelength converted by the light conversion agent can be better utilized by a photovoltaic device.

The present application discloses a white phosphorescent perovskite green fluorescent powder with high quantum efficiency and anti-thermal quenching of luminescence and a preparation method thereof. The chemical general formula is: M9Tb(PO4)7, where M is any one of Ca, Sr, Ba, and Mg; the fluorescent powder is synthesized by a high-temperature solid-phase method. The M9Tb(PO4)7 fluorescent powder exhibits the characteristics of anti-thermal quenching and high luminescence efficiency. At 200 °C, it can still maintain 125% of the emission intensity at room temperature (25 °C), effectively solving the problem of poor thermal stability existing in the prior art, and at the same time solving the problem of low luminescence efficiency caused by low doping concentration of Tb 3+ ​

The invention provides an image sensor pixel unit with a polarization response characteristic light trapping structure and a preparation method of the image sensor pixel unit. The image sensor pixel unit comprises a semiconductor substrate, a multi-layer structure arranged on the substrate and a polarization response unit. The multi-layer structure comprises an anti-reflection layer, a filling and leveling layer and a micro-lens layer. The polarization response unit adopts an all-dielectric sub-wavelength grating based on a backscattering technology, and the polarization response unit and the deep trench isolation structure are synchronously formed by adopting the same process, so that photoelectric isolation between pixels is realized, and a polarization selection function is also realized. The anti-reflection layer is a multi-layer dielectric film stack, and interface reflection is effectively restrained. By optimizing the design of a polarization selection-transmission-convergence cooperative structure, polarization selection and light enhancement functions are integrated, an all-dielectric material system is adopted to be completely compatible with a CMOS (complementary metal oxide semiconductor) process, and quantum efficiency is remarkably improved while high-efficiency polarization detection is realized.

The invention discloses an organic phosphorescent material intermediate for an OLED (Organic Light Emitting Diode) as well as a preparation method and application of the organic phosphorescent material intermediate, and relates to the field of organic phosphorescent materials. The intermediate is prepared through a Diels-Alder cycloaddition reaction between trans-cyclooctene and 3, 6-diphenyltetrazine, the reaction is carried out under the conditions that the temperature is 20-30 DEG C and the time is 10-30 minutes, and the mass ratio of the trans-cyclooctene to the 3, 6-diphenyltetrazine is 1: (1.0-2.5). Trans-cyclooctene is prepared by isomerizing cis-cyclooctene under the irradiation of 254nm ultraviolet light in the presence of a photosensitizer; the 2, 3, 6-diphenyl tetrazine is prepared by condensation, cyclization and purification of benzaldehyde and benzoyl hydrazine. The purity of the prepared intermediate reaches up to 99.2%, the yield reaches 82.4%, the intermediate serving as an OLED luminescent material has excellent thermal stability, and the quantum efficiency is still kept at 90.1% after HTHH treatment is conducted for 1000 h. The invention provides a new intermediate choice for developing a high-performance OLED (Organic Light Emitting Diode) material.

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

The invention provides a semiconductor laser element with a spin polarization sub-layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the spin polarization sub-layers of a multi-layer structure are arranged between the upper limiting layer and the upper waveguide layer in the semiconductor laser element, and the electron mobility distribution characteristic and the piezoelectric polarization coefficient distribution characteristic of each spin polarization sub-layer are limited. Specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin polarization sub-layer form an asymmetric discrete potential barrier, lattice distortion structure polarization is modulated, charge dipole momentum net accumulation is increased, the piezoelectric polarization effect of the active layer is regulated and controlled, the quantum restriction effect is suppressed, energy band inclination of the active layer is reduced, and hole injection band order is reduced. The overlapping probability of the electron hole wave function is improved, and the internal quantum efficiency is improved.

The invention relates to a backside illuminated image sensor preparation method, a backside illuminated image sensor and electronic equipment, and the method comprises the steps: providing a substrate which comprises a plurality of first isolation structures which extend towards the interior of the substrate through a first surface of the substrate and are arranged at intervals in a first direction parallel to the first surface; forming a first SiP layer on the first surface and a second isolation structure which penetrates through the first SiP layer along a second direction facing the substrate and is connected with the first isolation structure; forming a groove located between the adjacent second isolation structures, and a SiAs material layer which fills the groove and covers the first SiP layer and the top surfaces of the second isolation structures; forming third isolation structures connected with the second isolation structures in the SiAs material layer, and a plurality of second SiP layers located between the third isolation structures and distributed at intervals in the first direction; the residual SiAs material layer is used for forming the SiAs layer. According to the method, the technological process can be simplified, the number of photon-generated carriers in the device is increased, and the quantum efficiency is improved.

The invention discloses a rare earth based halide scintillator and a preparation method and application thereof, and belongs to the technical field of functional materials. The chemical formula of the rare earth based halide scintillator provided by the invention is RE (DMSO) 8 [Bi < 1-x > Sb < x > Cl6], wherein 0 < x < = 1; rE is a rare earth element; dMSO is a dimethyl sulfoxide ligand. By introducing the DMSO ligand and combining antimony doping, the formed rare earth based halide scintillator has intrinsic high atomic number, no self-absorption rare earth emission, no toxic element and outstanding comprehensive optical performance, so that the antimony-doped rare earth based halide scintillator has good luminescence performance and can be applied to the field of luminescent devices. Particularly, the compound has good fluorescence quantum efficiency and light yield, and has a good application prospect in the fields of detection, imaging or luminescence.