709 results about "Electron energy" patented technology

The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential. The electron energy of the electron beam is variably controlled by adjusting an electrical potential across the variable energy electron extractor, which energizes the electrons through an extraction hole of the chamber and toward the extractor. The greater the difference in the electrical potential between the electron extractor and the electron source, the higher the energy imparted to the electrons in the electron beam. The excitation power applied to the electron source can be adjusted independently from the electron energy of the electron beam, thereby altering the electron density of the electron beam without changing the energy level of the electrons of the electron beam.

A bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.

A free electron laser is disclosed. The free electron laser separates pulse bunching at a first electron energy from light generation stage at a second electron energy. A first wiggler pulse bunches the electrons and a second wiggler generates light. The first wiggler may be an optical buncher with an injected seed wave, and the second wiggler can be a magnetic wiggler, optical wiggler, resonant transition radiator, parametric radiation radiator, Cerenkov radiation radiator or a Smith-Purcell radiation radiator. The disclosed free electron laser is particularly useful for lithography applications at an extreme ultraviolet wavelength range near 13.5 nm.

The ionization device of the present invention is intended for use in conjunction with an aerosol TOF MS operating in a continuous mode and is capable of ionizing particulated substances in a wide range of particle masses. In the illustrated embodiment, the ionization unit consists of three coaxial cylindrical bodies having a three aligned longitudinal slits for directing electron beams from externally located electron gun onto the axially arranged flow of droplets. The cylindrical bodies are connected to voltage sources so that the external cylindrical body functions as an anode that extracts electrons from the current-heated filament. The central cylindrical body, in combination with the aforementioned anode, serves as an electron-energy control member for precisely controlling and selecting the energy of electrons that reach the flow of particles, while the inner cylindrical body functions as a decelerating member that can be used for adjusting energy of electrons which reached the flow of particles. The heated filament of each electron gun, which is used as a source of electrons, is inclined with respect to the aforementioned longitudinal axis whereby modulation applied to the elongated outer electrode of the electron gun provides different ionization conditions for specific particles of predetermined masses for analysis of which the aerosol TOF MS is tuned.

VHF/UHF power having a frequency of about 40 MHz or higher is applied across generally radial elements of an antenna and the phase of a standing wave component of the voltage in the generally radial elements is adjusted to provide relatively uniform density of a high density plasma across an area of at least the size of a semiconductor wafer being processed. Capacitive coupling of power to the plasma enhances the hot tail distribution of electron energies which is associated with low levels of gas cracking and the production of radicals such as fluorine which are not material-selective in semiconductor processing operations such as oxide etching. Accordingly, material-selectivity of processes may be maintained while the high density plasma accelerates the process to significantly improve tool throughput.

A jetting device for a low-temperature plasma generated by the atmospheric dielectric barrier discharge relates to the technical field of the application of gas discharge plasma. Inert gas and air are used as working gas; the plasma generated in a discharge area is blown out in the form of jet; the problem of limited application range caused by the narrow parallel-plate dielectric barrier discharge area and a high plasma macroscopic temperature can be solved. The device has the structural characteristics that a hollow pipe-shaped connector is connected with a hollow dielectric pipe; an electrode coated with insulation dielectric is fixed at the center of the dielectric pipe; an annular electrode is closely attached to the outer wall of the dielectric pipe; the working gas enters the dielectric pipe from a flow meter and a retaining valve through the connector; the plasma is blown out to form the plasma jetting. The jetting device has the advantages of low plasma macroscopic temperature, large electron energy, wide expanded range, low cost, low energy consumption and high reliability; furthermore, the jetting device can used in the fields of sterilization and disinfection, the surface modification of complex-shaped material, waste gas treatment, ozone synthesis, as well as the physical and chemical fields of the discharge light source plasma.

Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.

A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

A quantum cascade source, such as a QC laser, is provided comprising a plurality of repeat units each including an active region and an injector region. The active region includes at least two quantum wells that, in response to an applied electrical bias, provide a first, second, and third electron energy level, each resulting from a respective quantum well excited state. The first and second energy levels are configured so that an electron transition from the first energy level to the second energy level emits a photon of a selected wavelength. The second and third energy levels are configured so that an electron transition from the second energy level to the third energy level comprises a nonradiative transition to empty the second energy level sufficiently quickly to promote a population inversion between the first and second energy levels.

There is provided an element mapping unit, scanning transmission electron microscope, and element mapping method that enable to acquire an element mapping image very easily. On the scanning transmission electron microscope, the electron beam transmitted through an object to be analyzed enters into the element mapping unit. The electron beam is analyzed of its energy into spectrum by an electron spectrometer and an electron energy loss spectrum is acquired. Because the acceleration voltage data for each element and window data for 2-window method, 3-window method or contrast tuning method are already stored in a database and accordingly the spectrum measurement is carried out immediately even when an element to be analyzed is changed to another, the operator can confirm a two-dimensional element distribution map immediately. Besides, because every electron beam that enters into an energy filter passes through the object point, aberration strain in the electron spectrometer can be minimized and higher energy stability can be achieved. As a result, drift of the electron energy loss spectrum acquired by analyzing the electron beam into spectrum can be minimized and element distribution with higher accuracy can be acquired.

A method of navigating or endpointing a microscopic structure by subsurface imaging using a beam of electrons having sufficient energy to penetrate the surface and produce a subsurface image. For endpointing, when the subsurface image become relatively clear at a known electron energy, a user knows that he is approaching the buried feature. For navigating, a subsurface image can be formed of fiducials or other features to determine the position of the beam on the device.

A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (T_e). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

A cellular electron cooled storage ring system and method for achieving particle-fusion based energy, including a vacuum chamber to allow electron beam and ion beam merging and separation, cathodes to generate the electron beams, collectors to collect the electron beams, and magnetic field generation devices to guide the electrons and ions on their desired trajectories as well as contain neutralizing particles. By overlapping the electron and ion beams, thermal energy is transferred from the ion beams to the electron beams, which allows the invention to overcome particle losses due to resonances, scattering and heating of the ion beams. Advantageously, ions are accelerated to an energy that is near optimum for fusion reactions to occur, and uses electron energies that maintain this advantageous situation. Advantageously, the recirculation of ions that do not fuse or scatter at too large of an angle is allowed, giving such ions additional chances to participate in a desired fusion reaction. Advantageously, the invention allows for a continual addition of new ions to be added to the circulating ions already in the system. This combination of advantages results in a significant improvement in the predicted output power to input power ratio over previous particle fusion technologies. The invention will also enable improved yields of fast neutrons for materials testing.

A detector system for a transmission electron microscope includes a first detector for recording a pattern and a second detector for recording a position of a feature of the pattern. The second detector is preferably a position sensitive detector that provides accurate, rapid position information that can be used as feedback to stabilize the position of the pattern on the first detector. In one embodiment, the first detector detects an electron energy loss electron spectrum, and the second detector, positioned behind the first detector and detecting electrons that pass through the first detector, detects the position of the zero-loss peak and adjusts the electron path to stabilize the position of the spectrum on the first detector.

A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

The inventive device for obtaining the electron energy loss image and/or spectra includes an image sensor, a control for at least two deflectors for alternately exposing at least two photosensitive parts of the image sensor, sensor reading means for generating the representative signal of an image captured by each photosensitive part of the image sensor, means for synchronizing the deflector and the reading means for successively controlling the exposition of the photosensitive part and the reading of the other photosensitive part for each photosensitive part and means for combining the two image parts in such a way that a spectrum is formed.

The present invention provides charged particle energy deflectors, analyzers, devices, device components and methods for terminating charged particle systems and electrically isolating device components. One embodiment of the present invention provides a transparent field termination system for a cylindrical charged particle deflector that is capable of providing an electric field that closely approximates the substantially logarithmically varying electric field of the deflector. The present invention also provides multichannel charged particle analyzers and multichannel EEL spectrometers capable of measuring charged particle energy distributions, including electron energy distributions, with enhanced resolution and sensitivity compared to conventional analyzers.