203 results about "Conventional transmission electron microscope" patented technology

Provided is a magnetic tape in which the total thickness of the non-magnetic layer and the magnetic layer is equal to or smaller than 0.60 μm, the magnetic layer includes ferromagnetic hexagonal ferrite powder and an abrasive, a percentage of a plan view maximum area of the abrasive confirmed in a region having a size of 4.3 μm×6.3 μm of the surface of the magnetic layer by plane observation using a scanning electron microscope, with respect to the total area of the region is equal to or greater than 0.02% and less than 0.06%, and a tilt cos 0 of the ferromagnetic hexagonal ferrite powder with respect to a surface of the magnetic layer acquired by cross section observation performed by using a scanning transmission electron microscope is 0.85 to 1.00.

The invention provides an ultra-fast transmission electron microscope system which comprises an ultra-fast laser system, an electronic gun, an illuminating system, an imaging system, a sample chamber, a detector and a vacuum device, the ultra-fast transmission electron microscope system can particularly test ultra-fast structure change processes of samples under different laser parameters and environmental temperature, the different laser parameters include different excitation wavelengths, pulse width, laser power, repetitive frequency, sample temperature and the like, acquired signals comprise diffraction, microscopic images, energy loss spectroscopy and the like, and the ultra-fast structure change processes are analyzed by analyzing position and strength of diffraction peaks, image contrast change and the like.

The invention provides a preparation method and failure analysis method for a transmission electron microscope (TEM) sample. The method comprises the following steps: performing rough positioning on a failure area on a substrate, cutting an initial sample comprising the failure area, accurately positioning a specific failure point in the initial sample by using the TEM, and thinning the initial sample to form a final sample, namely the TEM sample for TEM electronic penetration can be provided. Therefore, the technical problems that a focused ion beam (FIB) is insufficient in resolution ratio, a failure point on a specific layer with small enough thickness inside a semiconductor cannot be accurately positioned and a TEM sample cannot be manufactured in the traditional technology are solved.

There is provided an element mapping unit, scanning transmission electron microscope, and element mapping method that enable to acquire an element mapping image very easily. On the scanning transmission electron microscope, the electron beam transmitted through an object to be analyzed enters into the element mapping unit. The electron beam is analyzed of its energy into spectrum by an electron spectrometer and an electron energy loss spectrum is acquired. Because the acceleration voltage data for each element and window data for 2-window method, 3-window method or contrast tuning method are already stored in a database and accordingly the spectrum measurement is carried out immediately even when an element to be analyzed is changed to another, the operator can confirm a two-dimensional element distribution map immediately. Besides, because every electron beam that enters into an energy filter passes through the object point, aberration strain in the electron spectrometer can be minimized and higher energy stability can be achieved. As a result, drift of the electron energy loss spectrum acquired by analyzing the electron beam into spectrum can be minimized and element distribution with higher accuracy can be acquired.

The invention relates to a method for preparing a powdered test sample for a transmission electron microscope. The method comprises the following steps of: cutting a crystal with a flat and neat surface from a soluble monocrystalline material according to a cleavage surface of the soluble monocrystalline material; placing an electron microscope carrying net onto the cut crystal block; ultrasonically dispersing the powdered sample to be observed by using absolute ethanol, dropping a proper amount of dispersed liquid onto the carrying net and naturally drying in the air; sputtering and depositing a layer of metal thin film by adopting a magnetron sputtering technology, and wrapping and fixing particles to be analyzed onto the carrying net by using the deposited thin film; after sputtering, shearing off a sputtered thin film along the edge of the carrying net; placing the carrying net with the fixed particles to be analyzed into an ion milling for milling until leakage; and taking down the sample and placing into the electron microscope for observation after the center of the sample is punctured. By the method, the problems that a plurality of powdered samples which have large particle size and complicated structure and are hard to smash or grind are hard to prepare, and an observation area is limited and the sample is easy to pollute can be solved; and the method is a sample preparation method with high sample preparation success rate and high suitability.

The invention discloses a method for preparing a deep sub-micron device sample for an in-situ transmission electron microscope. Ion beams are focused into ion beams with a small size for performing microdissection or grinding by utilizing an electromagnetic lens by adopting a focused ion beam system, accurate positioning sample preparation can be performed, and a deep sub-micron device is obtained. The method comprises the following steps: cutting and thinning the sample by adopting the focused ion beams so as to obtain a thinned sample, inclining a sample stage at 52+ / -(0.5-1.5) degrees relative to the finally thinned sample through conventional focused ion beams, and innovatively inclining the sample stage at 52+ / -7 degrees. The invention also provides a deep sub-micron device sample for the in-situ transmission electron microscope. The sample comprises multiple discrete nano devices which are regular in shape and have the width of less than 20nm and the thickness of less than 100nm. The sample is suitable for research on the in-situ transmission electron microscope and has the high significance in research on the performance of the deep sub-micron device.

The problem of the present invention is to provide a TEM sample equipped with an identifying function for easily specifying a detailed TEM sample and to provide a system for handling the management of information relating to the TEM sample using the TEM when making observations that is constructed with the FIB device manufacturing the sample. The TEM sample of the present invention is written with a mark encoding information specifying the sample at a specified location of a peripheral part. Information relating to the sample filed taking sample specifying information as an index is supplied to a TEM as associated matter. The sample working FIB device and observation TEM device of the present invention are provided with a function enabling writing of information relating to the sample and images to the file during operation which is then read out and utilized on a display.

The present invention relates to double-tilt specimen holders of the side-entry type for transmission electron microscopy (TEM). The invention uses Micro Electro Mechanical Systems (MEMS) and Piezoelectric Transducer (PZT) technology to create a digitally programmable dynamically tilting specimen holder integrated into a standard transmission electron microscope stage.In this invention, specimens can be tilted using a MEMS / PZT-actuated specimen holder to between 10 and 25° for stereo pairs and at higher angles (up to 90°) for tomography applications. In one embodiment, the specimen cradle may be effectively rotated 360° about the Y axis, enabling virtually the complete three-dimensional mapping of a specimen. By incorporating closed-loop capacitive feedback sensors for sub-nanometer positional control, the specimen holder allows rapid movement and full digital control of specimen tilt, enabling a number of novel techniques including real-time stereo imaging, auto crystal plane alignment and zero loss imaging.

The invention discloses a preparation method of a sample with a rust layer for in-situ observation of a transmission electron microscope. The method comprises the following steps of: (1), integrally packaging an obtained sample with a rust layer by a cold embedding method; 2), cutting the sample according to the sample size facilitating observation of the transmission electron microscope; 3), thinning the sample primarily; 4), forming a thin sample area which can be observed by the transmission electron microscope; and 5), bonding the prepared sample to a phi3mm round copper mesh, so as to obtain the sample with the rust layer for the in-situ observation of the transmission electron microscope. By adopting the preparation method, the initial shape of the rust layer is remained completely, and the method is very suitable for preparing of the sample with the rust layer for observation of the transmission electron microscope; and the prepared sample is representative, can truly indicate the whole characteristics of the analyzed material, and has great significant in the corrosion resistance research of steel and iron materials.

The invention relates to a micro grid of a transmission electron microscope, which comprises a grid and a graphene sheet-carbon nano tube film composite structure covering the grid, wherein the graphene sheet-carbon nano tube film composite structure is suspended by the grid part; and the graphene sheet-carbon nano tube film composite structure comprises at least one carbon nano tube film structure and a plurality of graphene sheets, the carbon nano tube film structure comprises a plurality of micro pores, and at least one micro pore is covered by one graphene sheet. The invention also relates to a preparation method of the micro grid of a transmission electron microscope.

A cold field emission (CFE) electron source for a focused electron beam system such as a transmission electron microscope (TEM), scanning transmission electron microscope (STEM), or scanning electron microscope (SEM) is disclosed. The source employs an emitter enclosure electrode behind the CFE tip which, in conjunction with the extractor electrode, defines a closed volume that can be thoroughly cleaned by electron impact desorption (EID) and radiative heating from a heated filament located between the emitter enclosure electrode and extractor electrode. The extractor electrode may have a counterbore which restricts backscattered electrons generated at the extractor from reaching portions of the source and gun which have not been cleaned by EID. Pre-cleaning of the emitter enclosure electrode and extractor electrode prior to cold field emission substantially improves both source emission stability and frequency noise characteristics, enabling source operation over time intervals adequate for application to TEMs, STEMs, and SEMs.

A confocal method in which a sample is disposed in the center, a collective lens and a front objective lens are disposed on the incident side, and a back objective lens and a projection lens are disposed symmetrically on the outgoing side is so configured that a spatial filter can be inserted in front of the sample and behind it. As a result, the advantage of the confocal method, which is in the possibility of disposing a spatial filter in front of the sample, is realized and the disadvantages of the conventional transmission phase contrast electron microscope (halo, electron beam loss) are eliminated, thereby providing a phase contrast electron microscope device that enables the establishment of an electron microscopy technology that makes it possible to view of a wide range of materials from material science to life science in a non-dyed state with a high contrast and a high resolution.

The invention discloses a planar transmission electron microscope (TEM) sample preparation method. The planar TEM sample preparation method comprises the following steps of preparing a wafer cut block containing a layer needing to be observed, labeling the layer needing to be observed, pasting glass on the layer needing to be observed, simultaneously grinding the wafer cut block and the glass, and cutting the wafer cut block to obtain a planar TEM sample. The planar TEM sample obtained by the planar TEM sample preparation method has the advantage that when the planar TEM sample is sucked by a suction needle, even if the suction needle enables the planar TEM sample to fall off from wafer and cannot suck the planar TEM sample, the planar TEM sample falling off can be found soon without repreparation of a new planar TEM sample, and thus preparation time is saved and a preparation cost is reduced.

The invention provides a preparation method of an observation sample for a transmission electron microscope, which comprises the following steps: the preparation of a testing structure, comprising: firstly, forming two rows of mark holes mutually in parallel in the course of manufacturing wafers, wherein the distance between the opposite edges of the two rows of the mark holes is the thickness of the observation sample finally obtained, and the graphic region to be observed is in parallel to the two rows of the mark holes and is arranged in the region between the two roles of the mark holes; and secondly, the deposition of the metal with obvious secondary electron image contrast and the preparation of the observation sample, comprising: eliminating the surface in parallel to the graphic region to be observed on the testing structure layer by layer and stopping the elimination action until after completely eliminating the tow rows of the mark holes, thereby obtaining the final observation sample. The preparation method of the observation sample for the transmission electron microscope can accurately judge the cutting stopping point through the mark holes and cannot cause the excessive cutting.

A uniaxial tension sample holder capable of testing in-situ stress and electrical property for a transmission electron microscope belongs to the researching fields of transmission electron microscope fitting and nano-material in-situ measurement. A prior art can realize stress signal reading during material deformation, but has strict requirements on a sample and only suits for a none-dimensionalnano-material like a nano wire or a nanotube, or a sample prepared by focused ion beam cutting; besides the prior art can not realize electrical property measurement under a stress state. The sample holder comprises a self-design transmission electron microscope sample holder, a deformation microscope slide, a sample head and compressing tablets. The deformation microscope slide is fixed on the sample head through the compressing tablets; a circuit used for measuring cantilever beam minimal deformation and a circuit used for measuring sample electrical signals of the deformation microscope slide are connected to electrodes on two sides of the sample head and connected to external testing equipment through a lead in the sample holder, so as to realize real time monitoring on the stress and the electrical signals.

A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is / are produced and displayed on a display device.

Chirality distribution in the molecular structure of protein or the like and magnetic domain structure are analyzed with high resolution less than 10 nm. A transmission electron microscope equipped with a spin-polarized electron source is used for holography observation. The phase of transmission spin-polarized electrons changes due to the existence of chirality structure or magnetization in a sample, which is observed as an interference pattern phase shift in holography measurement.

The invention provides a preparation method of an observation sample of a device insulated isolation region for a transmission electron microscope. A sample which comprises a substrate and the device insulated isolation region is provided. The method comprises the following steps of: A, depositing a silicon nitride layer on the device insulated isolation region; B, depositing a silicon dioxide layer on the deposited silicon nitride layer; and C, cutting the sample by using focusing ion beams so as to form a transmission electron microscope observation slice which is exposed out of the cross section of the device insulated isolation region. In the observation sample of the device insulated isolation region for the transmission electron microscope prepared by the method, the silicon nitride layer and the silicon dioxide layer are deposited on the device insulated isolation region to protect the loose device insulated isolation region, so that high-energy ion beams are prevented from contracting and deforming an oxide layer on the top of the device insulated isolation region when the focusing ion beams are used for cutting the sample.

A transmission electron microscope is capable of correcting, with high efficiency and high accuracy, an electron energy loss spectrum extracted from each of measured portions included in an electron energy loss spectral image with two axes representing the amount of an energy loss and positional information on a measured portion. The transmission electron microscope has an electron spectroscope and a spectrum correction system. The spectrum correction system corrects a spectrum extracted from each measured portion included in an electron energy loss spectral image acquired from a sample based on a difference between a spectrum extracted from a standard portion of a standard spectral image and a spectrum extracted from a portion different from the standard portion.

In order to correct measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis; a method for correcting magnification and position and a system for correcting magnification and position, both of which are capable of correcting measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis, are provided.

A scanning transmission electron microscope operated with the sample in a high pressure environment. A preferred detector uses gas amplification by converting either scattered or unscattered transmitted electrons to secondary electrons for efficient gas amplification.

The invention provides a method for preparing a transmission electron microscope (TEM) detecting sample wafer to improve the quality of the TEM detecting sample wafer and further reducing the error of TEM detecting. The method comprises the following steps: providing an initial TEM detecting sample wafer; depositing a barrier layer on the TEM detecting sample wafer; depositing an electron-beam auxiliary layer on the barrier layer; and depositing an ion-beam auxiliary layer on the electron-beam auxiliary layer.

A scanning transmission electron microscope which enhances correction accuracy of a de-scanning coil for canceling a transmitted-electron-beam position change on an electron detector. Here, this transmitted-electron-beam position change appears in accompaniment with a primary-electron-beam position change on a specimen caused by a scanning coil. First, control over the scanning coil is digitized. Moreover, while being synchronized with a digital control signal resulting from this digitization, values in a de-scanning table registered in a FM (2) are outputted to the de-scanning coil. Here, the de-scanning table is created as follows: Diffraction images before and after activating the scanning coil and the de-scanning coil are photographed using a camera. Then, based on a result acquired by analyzing a resultant displacement quantity of the diffraction images by the image processing, the de-scanning table is created.

The invention discloses a preparation method for a flexible high-atomic-number material TEM (transmission electron microscope) sample. The preparation method comprises the following steps: placing a sheet sample taken down from a preparation region in a flexible high-atomic-number material block sample on a copper mesh column for TEM experiment with an H-bar Lift-out process; performing rough thinning on the sheet sample by a focused ion beam to obtain a roughly thinned sheet sample; performing transverse regional selective fine thinning on the sheet sample by the focused ion beam to obtain afine thinned sheet sample with alternative fine thinned regions and non-thinned interval regions; performing transverse and longitudinal regional selective final thinning on the sheet sample by the focused ion beam to obtain the flexible high-atomic-number material TEM sample with alternative fine thinned regions and non-thinned interval regions finally. Deformation of the flexible material sampledue to thinning to thickness of 100 nanometers or smaller is effectively prevented by self-supporting effect of the sample, and characterization analysis is facilitated.

A calibration standard includes a silicon substrate having a plurality of defined regions and a plurality of calibration marks placed on respective defined regions of the silicon substrate. Each calibration mark comprises a different calibration dimension indicator and a corresponding dimension identifier. A method for calibrating a transmission electron microscope using the standard comprises positioning the calibration standard in a viewing area of the transmission electron microscope and sequentially viewing the marks and adjusting the calibration of the microscope for each mark viewed.

An inline electron holograph method for observing a specimen with a transmission electron microscope having an electron gun, a collimating lens system, two spaced objective lenses, a biprism, and an imaging means comprises the steps of: with the first objective lens forming a virtual image of a portion of the specimen; with the second objective lens focussing the virtual image at an intermediate image plane to form an intermediate image; and projecting the intermediate image onto the imaging means.

The invention discloses a whole-temperature-range thermoelectric-field transmission electron microscope in-situ sample rod which comprises a DEWAR fixing ring, a DEWAR outer tank upper portion, a DEWAR outer tank lower portion, guide pins, a sample rod shell, sealing rings, a fixing piece and a sample rod head, a DEWAR inner tank upper portion, a DEWAR inner tank lower portion, a heating module, a fixing plate, a vacuum electrical connector, a wire hole, a sample rod inner rod body, a PCB adapter plate and an in-situ test chip. Based on big-temperature-range design, electric signals can be directly added to a sample for conducting thermoelectric performance research in the sample material. The low-temperature and high-temperature cooling functions are achieved with liquid nitrogen, and refrigerating and cooling are achieved rapidly; a detachable mode is adopted for the sample rod head, the function of replacement and expansion is achieved, and single low temperature or high temperature is achieved or the whole-temperature-range is achieved at the same time; a chip microcell heating mode is adopted for a heating module, heat contact is lowered, and heat drift is reduced; design of enlarging the work microcell is utilized, a temperature measurement element is detected through resistance signal change, and real-time and accurate temperature detection can be achieved.

There is provided an element mapping unit, scanning transmission electron microscope, and element mapping method that enable to acquire an element mapping image very easily. On the scanning transmission electron microscope, the electron beam transmitted through an object to be analyzed enters into the element mapping unit. The electron beam is analyzed of its energy into spectrum by an electron spectrometer and an electron energy loss spectrum is acquired. Because the acceleration voltage data for each element and window data for 2-window method, 3-window method or contrast tuning method are already stored in a database and accordingly the spectrum measurement is carried out immediately even when an element to be analyzed is changed to another, the operator can confirm a two-dimensional element distribution map immediately. Besides, because every electron beam that enters into an energy filter passes through the object point, aberration strain in the electron spectrometer can be minimized and higher energy stability can be achieved. As a result, drift of the electron energy loss spectrum acquired by analyzing the electron beam into spectrum can be minimized and element distribution with higher accuracy can be acquired.

The invention provides a method for preparing an observation sample of a transmission electron microscope. The method comprises the following steps: selecting an electron microscope observation area on the surface of a pattern layer; removing a pattern layer and a substrate adjacent to one side of the electron microscope observation area to expose an image layer section and a substrate layer section on the side of the electron microscope observation area; removing a large part of the substrate of a semiconductor device, and maintaining a small part of the substrate; cutting the substrate in the electron microscope observation area to form a through groove; cutting the exposed pattern layer section on the side of the electron microscope observation area, which is adjacent to the through groove, so that different image layers on the pattern layer section have specific parts without other image layers or substrate in front of and behind the image layers and covering the image layers, wherein the specific parts of the image layers form a pattern layer observation area; and cutting the semiconductor device so that the size of the device containing the pattern layer observation area is in accordance with the size requirement to the sample of the transmission electron microscope.

The invention relates to a method for electron diffraction tomography in a Transmission Electron Microscope. Known methods involve using Scanning Transmission Electron Microscope, and use the scanned beam for STEM diffraction. The invention proposes to form the diffraction patterns with a stationary beam with a diameter slightly larger than the crystal, as a result of which a TEM without STEM unit can be used. Finding the crystal is done in TEM mode. Advantages of the method according to the invention are: a TEM without scanning unit can be used, and the diffraction volume is not depending on the orientation of the crystal, as the whole crystal is illuminated while obtaining the diffraction pattern.