36results about How to "Extend deposition time" patented technology

A method is provided for treating a magnesium-containing article to form a cathodic protective coating on such article. This is done by electrochemically treating the article, acting as a cathode, in an alkaline solution, preferably at a temperature of between 40 and 80° C., with a cathodic current density of 5-200 mA / cm2. The treatment produces a magnesium-containing article having a protective coating of magnesium hydride of predetermined thickness with a high count of hydrogen particles.

An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S / N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

A thin-film forming method, which includes the steps of: (1) holding at least one object in a chamber; (2) depositing a film-forming material on the object; (3) etching the forming material while depositing is conducted. In the present invention, the depositing and etching are controlled to simultaneously conduct. The invention also disclose a system for performing the method.

An optical colorful film and a manufacturing method thereof, the method comprising: S1, depositing a TiO2 layer on the surface of a base material as a first layer; S2, depositing a SiO2 layer on the first layer as a second layer; S3, depositing a SiO2 layer on the first layer; Depositing a TiO layer on the second layer as the third layer; S4, depositing a SiO layer on the third layer as the fourth layer; S5, depositing a TiO layer on the fourth layer as the fifth layer; S6, depositing the TiO layer on the fourth layer as the fifth layer; Depositing a SiO2 layer on the fifth layer as the sixth layer; S7, depositing a TiO2 layer on the sixth layer as the seventh layer; wherein, controlling the deposition process of the multilayer film makes the multilayer film produce dazzling color, and continuously deposit the seventh layer, that is, the outermost layer, for 40 to 50 minutes while maintaining the dazzling color. The invention greatly improves the wear resistance of the optical film, and at the same time ensures the colorful effect of the optical film.

The invention discloses a safe and environment-friendly piling method for a valley-type phosphogypsum warehouse. According to the safe and environment-friendly piling method, a minimum dry beach separation dam (8) is arranged around the interior of the valley-type phosphogypsum warehouse in a circle at the preset spacing away from the front of a phosphogypsum dam (2) and a mountain slope (10); a flood regulation dry beach separation dam (8') is arranged around the interior of the valley-type phosphogypsum warehouse in 0.45 to 0.55 of a circle at the preset spacing away from the minimum dry beach separation dam (8), and starts from the end of the minimum dry beach separation dam (8); after being discharged from a slurry discharging pipe (3), phosphogypsum slurry is guided by a spiral linearseparation dam to form a spiral alluvial beach surface; water in the phosphogypsum slurry finally gathers in a clarification area (5) inside the valley-type phosphogypsum warehouse; and the average slope of a minimum dry beach (6) and a flood regulation dry beach (7) reaches 0.26% to 0.42%. The safe and environment-friendly piling method disclosed by the invention has the beneficial effects thatthrough the guide by the spiral linear separation dam, the alluviation of phosphogypsum around a filling warehouse and the spiral rise can be achieved, thereby greatly prolonging the deposition time,guaranteeing the high clarity of water in the clarification area (5) inside the valley-type phosphogypsum warehouse, and reducing the running cost of the valley-type phosphogypsum warehouse.

The invention provides a method for manufacturing a semiconductor device and relates to the technical field of a semiconductor. The method comprises steps that a semiconductor substrate is provided, and a first polysilicon layer is formed on the surface of the semiconductor substrate; metal silicide is formed on the first polysilicon layer through deposition, the metal silicide is deposited in an chemical vapor deposition method, and deposition temperature is made to be greater than 440 DEG C; a second doped polysilicon layer is formed on the metal silicide through deposition. According to the manufacturing method, through enhancing the deposition temperature of the metal silicide and prolonging the deposition time non-doped polysilicon in the polysilicon layer on the metal silicide, stress of corresponding material layers is reduced, a problem of peeling of the metal silicide and the upper-layer polysilicon layer caused by change of stress generated in a later annealing process can be avoided, and thereby the yield and performance of devices are improved.

The invention relates to the field of fabrication of new materials and coatings and may be used in plants designed for electron-beam heating, melting and evaporating of materials in vacuum or reactive gas atmosphere. The disclosed axial electron gun that comprises, in particular, the primary and secondary cathodes and features the figure-shaped holder used for maintaining a stable position of the secondary cathode relative to the electron-beam axis of the axial gun and the pulsed voltage that is applied between the cathodes for electron bombardment of the secondary cathode. The invention ensures an improved stability of process parameters and operation of the electron gun.

The invention discloses a method and a device for preparing a coating by using nanosecond pulse laser cladding, belonging to the technical field of the preparation of coatings on material surfaces through laser cladding, and aiming to solve the problems existing in the present nanosecond pulse laser cladding. According to the method and the device, a metal is deposited on the surface of a workpiece through MOCVD (metal organic chemical vapor deposition), and the surface of the workpiece is scanned by nanosecond laser light at the same time, so that the metal is cladded on the surface of the workpiece, and a coating with a micron or submicron level thickness is formed on the surface of the workpiece. The method and the device disclosed by the invention do not have special requirements for a substrate material, are wide in application range, and can meet the needs of the preparation of the coatings of plane workpieces and special-shaped workpieces; a prepared thin film coating has the advantages of densification, controllable thickness (micron or submicron) and firm film-substrate adhesion; meanwhile, the surface roughness of the workpiece subjected to processing is not less than that of the workpiece before cladding; the secondary processing such as grinding and polishing is not needed, so that the production cost is reduced; meanwhile, after being processed by the method and the device, the workpiece can not be deformed and can meet the processing requirements for precision workpieces.