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45results about How to "Improve the success rate of sample preparation" patented technology

Method for preparing powdered test sample for transmission electron microscope

The invention relates to a method for preparing a powdered test sample for a transmission electron microscope. The method comprises the following steps of: cutting a crystal with a flat and neat surface from a soluble monocrystalline material according to a cleavage surface of the soluble monocrystalline material; placing an electron microscope carrying net onto the cut crystal block; ultrasonically dispersing the powdered sample to be observed by using absolute ethanol, dropping a proper amount of dispersed liquid onto the carrying net and naturally drying in the air; sputtering and depositing a layer of metal thin film by adopting a magnetron sputtering technology, and wrapping and fixing particles to be analyzed onto the carrying net by using the deposited thin film; after sputtering, shearing off a sputtered thin film along the edge of the carrying net; placing the carrying net with the fixed particles to be analyzed into an ion milling for milling until leakage; and taking down the sample and placing into the electron microscope for observation after the center of the sample is punctured. By the method, the problems that a plurality of powdered samples which have large particle size and complicated structure and are hard to smash or grind are hard to prepare, and an observation area is limited and the sample is easy to pollute can be solved; and the method is a sample preparation method with high sample preparation success rate and high suitability.
Owner:CHINA NAT ACAD NANOTECH & ENG

Method for preparing transmission microscope samples on basis of non-precision positioning

The invention discloses a method for preparing transmission microscope samples on the basis of non-precision positioning, and belongs to the technical field of semiconductors. The method includes providing failure analysis chips and positioning and labeling failure points in the failure analysis chips to obtain labeled zones; cutting a side of each labeled zone to form first wedge-shaped cavitiesand thinning the sections, which are close to the labeled zones, of the first wedge-shaped cavities until the failure points can be observed; forming protective layers on the sections where the failure points are observed; cutting the other side of each labeled zone to form second wedge-shaped cavities and thinning the sections, which are close to the labeled zones, of the second wedge-shaped cavities until primary samples with preset thicknesses are obtained; carrying out U-shaped cutting-off on the bottoms of the primary samples and then thinning the primary samples to obtain the transmission microscope samples. The method has the advantages that the failure points can be effectively prevented from being cut by mistake, each cut surface with the corresponding failure points can be prevented from being damaged or stained by splashing in follow-up processes, accordingly, the sample preparation success rate can be increased, and observation results can be improved.
Owner:YANGTZE MEMORY TECH CO LTD

GaAs chip failure analysis sample and preparation method thereof

The invention relates to a GaAs chip failure analysis sample and a preparation method thereof. The preparation method comprises the steps of: grinding a substrate of a GaAs chip to expose the crystal back of the GaAs chip; carrying out hot spot positioning on the GaAs chip with the exposed crystal back, and confirming a failure position; physically thinning the crystal back of the GaAs chip to enable the thickness after thinning to meet the cutting operation thickness; scanning the thinned GaAs chip by using an infrared microscope, and confirming the failure position again; and cutting the thinned GaAs chip according to the failure position and forming a failure analysis sample. According to the method, a traditional chemical method for unpackaging a plastic package body is canceled, damage to metal wires of the GaAs chip is avoided, the sample preparation success rate is increased, and the subsequent failure analysis effect is guaranteed.
Owner:INTEGRA TED SERVICE TECH SHANGHAI CO LTD

Test method for interfacial bonding strength of ceramic fiber reinforced resin matrix composites

ActiveCN104122202BImplement statistical measurementsSolve the fragileUsing mechanical meansMaterial analysisAdhesiveResin matrix
The invention discloses a method for testing the interfacial bonding strength of a ceramic fiber-reinforced resin matrix composite material and relates to ceramic fibers. The method comprises the following steps: bonding the ceramic fibers to a hard paper frame by virtue of an instant adhesive, for straightening and solidifying the ceramic fibers; preparing an embedding mold, putting the ceramic fibers and the hard paper frame into the embedding mold, and introducing resin into the embedding mold; after the resin is solidified, cutting an embedded end together with the embedding mold so as to obtain a sample, and polishing; when the embedding depth of the sample is lower than 1mm, bonding the embedded end with a primary cut part by virtue of quick-dry resin after the polishing process; burning out two sides of the paper frame at an un-embedded end by virtue of naked flame, averagely cutting the upper end of the paper frame according to the quantity of the ceramic fibers, and bonding and reinforcing the paper frame by virtue of a hard paperboard with area equal to that of the cut paper frame; firstly fixing the embedded end at a lower clamp of a testing machine, and then fixing a reinforcing section to an upper clamp of the testing machine; carrying out a single-filament draw-out experiment; recording each withdrawal force value given by a testing machine; observing the shape of an withdrawn end, and measuring the maximal withdrawing length of the single fiber; and calculating the interfacial bonding strength between the fiber and the resin.
Owner:XIAMEN UNIV

High-resolution hard X-ray tungsten/gold Fresnel zone plate and preparation method thereof

Belonging to the technical field of X-ray imaging, the invention particularly relates to a high-resolution hard X-ray tungsten/gold Fresnel zone plate and a preparation method thereof. The method includes the steps of: growing a chromium/gold electroplated seed layer on a silicon nitride substrate; growing metal tungsten on the electroplated seed layer; conducting spin-coating of a PMMA positive photoresist on the substrate, and performing baking and curing; utilizing an electron beam lithography machine to perform exposure; conducting developing, and then performing rinsing with IPA to obtaina photoresist zone plate structure; taking the photoresist as a mask, and carrying out nano gold electroplating on the upper layer to obtain an upper-layer gold zone plate; and putting the upper-layer gold zone plate into a reactive ion etching machine, taking the gold zone plate as a mask to etch metal tungsten, and transferring the pattern to obtain the tungsten/gold Fresnel zone plate. The zone plate has a high resolution with large aspect ratio (greater than 20/1). The method can also be used for preparation of a Fresnel zone plate lens for soft X-ray to hard X-ray detection, the obtainednano-pattern structure is controllable in morphology, and the method is compatible with the existing semiconductor process.
Owner:FUDAN UNIV

In-situ EBSD observation method for microscopic orientation evolution of recrystallized grains of magnesium alloy

The invention belongs to the field of metal material structure analysis sample preparation and structure observation characterization, and particularly relates to an in-situ EBSD observation method for microcosmic orientation evolution of recrystallized grains of magnesium alloy. The method comprises the steps of firstly, carrying out mechanical polishing on a magnesium alloy sample, then preparing indentation mark points on the surface to be detected, and conducting EBSD observation for the first time on a target area after ion etching; and taking out the sample, carrying out recrystallization annealing heat treatment and ion etching, finding the same area according to the indentation mark points, carrying out EBSD observation for the second time, and similarly, completing subsequent required in-situ EBSD observation. According to the method, in-situ tracking characterization of recrystallization nucleation, grain growth and microscopic orientation evolution in the same area in the recrystallization annealing process of the magnesium alloy is achieved, and the problems that the magnesium alloy is low in calibration rate due to a surface stress layer, an oxide layer and pollutants,accurate positioning cannot be achieved, and in-situ EBSD observation is difficult to achieve are solved. The process is simple and controllable, the technical requirements on sample preparation of experimenters are low, and the experiment success rate is high.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Sample preparation toolkit for determining curing temperature of high-solid-content propellant powder and use method of sample preparation toolkit

The invention discloses a sample preparation toolkit for determining the curing temperature of a high-solid-content propellant powder and a use method of the sample preparation toolkit. The high-solid-content propellant powder is cylindrical propellant powder with the solid filler mass fraction of 54%, the diameter of 14 mm and the height of 15 mm, and the sample preparation tool kit comprises a sample preparation knife, a sample preparation cover, a sample preparation disc and a hammer. Each propellant grain is split into two halves along the axis by using a sample preparation toolkit, the two halves are cured for 0-5 days at 80 DEG C, 90 DEG C and 100 DEG C respectively, an elastic modulus average value E and a standard deviation delta are calculated through multi-point detection by using a nanoindentor, and alpha = E * 4 + delta * 6; recording corresponding time tmin when alpha reaches the minimum value at the same temperature, and enabling delta to be equal to tmin-3; delta at the three temperatures of 80 DEG C, 90 DEG C and 100 DEG C is compared, and the temperature corresponding to the minimum value of delta is the optimal curing temperature. When the sample preparation toolkit is used for sample preparation, the loss is small, the potential safety hazard is small, the sample preparation time is short, the sample preparation repeatability is good, and the influence on a detection result is small.
Owner:XIAN MODERN CHEM RES INST

Preparation method of source and drain electrodes of high-electron-mobility transistor

The invention belongs to the technical field of transistor preparation, and particularly relates to a preparation method of source and drain electrodes of a high-electron-mobility transistor. The preparation method provided by the invention adopts an angular evaporation self-alignment process, and basically comprises the following steps: on the basis of a T-shaped gate growth process, accurately controlling the distance between a source electrode and a gate electrode and the distance between a drain electrode and the gate electrode of a high-electron-mobility transistor device in an angular evaporation manner by utilizing a unique T-shaped structure of the gate electrode of the high-electron-mobility transistor; therefore, the positions of the source electrode, the drain electrode and the T-shaped gate of the high-electron-mobility transistor device achieve the purpose of position-controllable self-alignment, and finally, a new adjustable geometrical parameter freedom degree is provided for improving the performance of the device. The method provided by the invention can be used for preparing a high-electron-mobility transistor device with a T-shaped gate structure to obtain a symmetrical or asymmetrical distance between a source and a gate and a distance between a drain and the gate, and is compatible with the existing semiconductor process at the same time.
Owner:FUDAN UNIV

Nano-film transmission electron microscope in-situ heating chip sample preparation method

The invention discloses a nano-film transmission electron microscope in-situ heating chip sample preparation method. The method comprises the following steps: (1) selecting a liquid injection device;(2) cleaning and fixing the liquid injection device; (3) bending one end of a copper wire into a copper ring; (4) moving the copper ring to a position near the thin film sample, and fishing up the thin film sample to the copper ring; (5) extruding a liquid drop from the liquid in the microsyringe; (6) moving the copper ring to a position near the liquid drop at the tip of the microsyringe, so thatthe film sample is adsorbed on the liquid drop; (7) accurately adsorbing the liquid drops in a sample observation area, and then moving away the microsyringe; (8) naturally drying the chip; and (9) heating and baking the naturally dried chip. Accurate titration of the nano-film in the Si3N4 film observation area in the transmission electron microscope in-situ heating chip can be realized, hydrophilic treatment on the Si substrate is not needed, the cost is reduced, the influence of surface tension on the film is avoided, the sample preparation success rate is improved, and the risk of damageto a chip electrode is reduced.
Owner:GUANGXI UNIV

Preparation method of transmission electron microscope sample

The invention discloses a preparation method of a transmission electron microscope sample. The method comprises the following steps: fixing the sample to a carrying net of a sample table; rotating the sample table along a rotating shaft, wherein the extending direction of the rotating shaft is parallel to the normal direction of the to-be-thinned surface of the sample; in the rotating process of the sample table, the sample is cut in the cutting direction, and the cutting direction is parallel to the plane where the surface to be thinned is located. According to the technical scheme, in the sample cutting process, the cutting direction is always parallel to the plane where the to-be-thinned surface is located, by changing the rotating angle of the sample table, the cutting light beam can directly cut part of the area behind the component difficult to cut at a certain angle, drawing marks are reduced, and the cutting efficiency is improved. The cutting thickness of the surface to be thinned is more uniform, the thickness of the prepared transmission electron microscope sample is more uniform, and the success rate of sample preparation is improved; and the thickness of the prepared transmission electron microscope sample is relatively uniform, so that convenience can be provided for subsequent observation and analysis.
Owner:GIGA FORCE ELECTRONICS CO LTD

A sample preparation process of undisturbed triaxial sample of spin-down type soil

ActiveCN108593389BPrevent tilting deformationAvoid huge disturbancesPreparing sample for investigationSoil scienceStructural engineering
The application relates to a sample preparation process of a spin-down type undisturbed soil triaxial sample, which belongs to the technical field of indoor geotechnical testing of the civil engineering discipline. The rotary cutting method is used for sample preparation. First, calculate the liquid index of the soil according to the soil data, and then select the corresponding cutting blade speed, and then place the soil sample on the nail plate, and control the lifting switch and cutting speed. switch to make the cutting blade complete lifting and rotating. When the cutting blade rotates, a circle with a larger diameter is formed at the cutting edge, and the original soil sample is cut through the self-rotation and lifting of the cutting blade to complete the production of the sample; The invention greatly simplifies the operation steps, does not disturb the undisturbed soil during the cutting process, avoids the influence of uncertain factors and human factors in the cutting process, and completes the sample preparation accurately and efficiently; compared with the existing laboratory The undisturbed soil cutter, its sample preparation efficiency is increased by 2 times, and the sample preparation time is about 15 minutes.
Owner:SHAOXING UNIVERSITY +1
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