6results about How to "Non-destructive" patented technology

The invention relates to a method for producing a pedal device (10) for a drive-by-wire system of a vehicle, in which a pedal part (50) is mounted on a support structure (20) in such a way that first a bearing section (LA) of the pedal part (50) is brought into contact with a bearing region (LB) of a first support part (22) of the support structure (20), and second support part (22) of the support structure (20) is brought into contact with a bearing region (LB) of a second support part (22) of the support structure (20). And subsequently mounting a second support part (24) of the support structure (24) on the first support part (22) in such a way that the bearing section (LA) of the pedal part (50) is loaded towards the bearing region (LB) of the first support part (22). The invention further relates to a pedal device for the drive-by-wire system.

The invention belongs to the technical field of non-destructive detection of refractory material products, and discloses a non-destructive detection method for internal structure defects of a refractory material based on radar scanning, which aims at special refractory material products such as cast products with higher density, sintered products with higher volume density and the like, and detects the internal structure defects of the refractory material through linear scanning or regional scanning. The method comprises the following steps: forming a time slice view of which the observation thickness can be randomly adjusted by combining a linear waveform, a two-dimensional map and a migration view, and identifying and judging the types, sizes and positions of defects in the refractory material product by integrating all imaging characteristics and data to form a multi-dimensional data analysis system; quantitative analysis on internal defects such as shrinkage porosity and closed pores of the refractory material is realized; the method is non-destructive, compared with conventional detection means such as infrared rays and X-rays, the method is simpler, more convenient and safer, the accuracy and comprehensiveness of internal structure defect recognition are improved, a reliable non-destructive detection means is provided for quality control of refractory material products, and the method has definite industrial application value.

The invention discloses a method for applying a hybrid memory circuit based on a CMOS transistor to online training and reasoning of a neural network, according to the method, a CMOS transistor synaptic device and a CMOS capacitor are adopted to form a synaptic unit to replace a traditional memristor and a ferroelectric capacitor, the writing durability of the CMOS transistor synaptic device is far better than that of the traditional memristor, the reading operation of the CMOS capacitor is non-destructive, and the reliability of the memory circuit is improved. Meanwhile, the whole process is realized based on a standard CMOS (Complementary Metal Oxide Semiconductor) process and is completely compatible with the existing integrated circuit manufacturing process, the hardware mass production cost is reduced, and only the simulation weight is called for operation in the reasoning stage without additional data transmission; an external DAC is not needed in the weight transmission stage, digital-to-analog conversion is achieved through circuit parasitic parameters, and the energy expenditure of edge equipment is greatly reduced.

The invention discloses a method for characterizing a trap time constant causing long-term degradation of a gate oxide layer of a silicon carbide MOSFET, and belongs to the field of electronic device testing. Firstly, a specific grid voltage is applied in a high-temperature environment, so that an interface state trap and a near-interface state trap are fully filled; and then the temperature is kept unchanged, and meanwhile, the grid voltage is increased, so that a deep-energy-level oxide layer trap starts to capture charges. In the process, drain-source voltage is applied at the same time, trapping of electrons by traps can cause change of threshold voltage, and transient drain-source current is gradually reduced. By recording the change curve of the drain-source current along with time, it can be observed that the current drops due to trap filling in the initial stage, and finally the current is gradually stable along with the trap tending to be saturated. According to the invention, the time constant of the device oxide trap is accurately measured, and the influence of other traps of the device on the measurement result is avoided. The method has the advantages of simplicity in operation, high repeatability and high reliability. And the oxide layer trap of the device can be accurately represented in actual work.

The application provides a stress detection-based fiber ring cracking defect detection method, which utilizes distributed Brillouin sensing technology to obtain the strain distribution of the fiber ring along the length direction, compares the stress difference between the healthy state and the current state, identifies the local stress anomaly caused by micro-cracks or structural damage, and realizes early discovery, accurate positioning and risk assessment of the cracking defect. The method has the advantages of non-destructive, high sensitivity, full distribution, quantification and the like, is suitable for quality control and reliability guarantee of high-precision fiber devices, and has important engineering application value.