19 results about "Synaptic device" patented technology

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The application discloses a kind of based on laminated CrOCl auxiliary storage's floating gate structure optoelectronic synapse device and preparation method, belong to semiconductor device technical field.Device includes by lower to upper sequentially arranged substrate, Gr nanosheet, CrOCl nanosheet, h-BN nanosheet and MoS2 Nanosheet, wherein, MoS2 Nanosheet two ends are connected with active electrode and drain electrode, Gr nanosheet, CrOCl nanosheet, h-BN nanosheet and MoS2 Nanosheet are combined by Van der Waals interaction;MoS2 / h-BN / CrOCl / Gr floating gate optoelectronic synapse device of the application can effectively increase double scanning storage window by the secondary adsorption electron capacity of CrOCl, widen multi-level storage capacity, can realize multi-level storage under the joint modulation of electric pulse and light pulse, show excellent electrical writing and optical erasing technology in photoelectric hybrid storage, in addition, under the common modulation of photoelectricity, show good synapse characteristics, including long-term plasticity, short-term plasticity, the recognition accuracy of neural network constructed by MoS2 / h-BN / CrOCl / Gr floating gate device of the application can reach 97% on direction identification data set.

This invention discloses a design and operation method for a multimodal optoelectronic synaptic device based on the synergy of asymmetric structure and defects. The method includes constructing a device with a two-terminal asymmetric structure, consisting of a metal layer / functional layer 1 / functional layer 2 / electrode. The core lies in forming a two-terminal asymmetric functional junction (Schottky junction / heterojunction) on both sides of functional layer 1. This invention utilizes the unified yet differentiated response dynamics (migration and recombination) of defects such as oxygen vacancies in the functional layer to light and electrical signals, achieving a response within an order of magnitude of specific encoded light and electrical signals in a single device. This enables weighted fusion of multimodal signals, non-volatile storage, and selective decoupling. This method is independent of specific material systems (including oxide types, electrode types, doping, etc.) and fabrication processes, providing core operational logic for constructing general-purpose neuromorphic hardware capable of performing in-situ sensing and computation.

This invention discloses a fully optically modulated photoelectric synaptic device, its fabrication method, and its applications. This device successfully simulates the synaptic behavior of nerve cells within the ultraviolet to visible light spectrum. Furthermore, the device exhibits positive responses to both ultraviolet and visible light, with an increase in photocurrent. However, when irradiated with ultraviolet light first and then with visible light, the visible light inhibits the photocurrent generated by the ultraviolet light, causing a rapid decrease in photocurrent.

This application belongs to the interdisciplinary fields of semiconductor optoelectronic devices, multiferroic materials, and neuromorphic computing. Specifically, it discloses an in-situ differential optoelectronic synaptic device and its in-memory computing method. The method involves grounding the first and second electrodes, applying a voltage to the bottom electrode to change the polarization direction of the ferroelectric domains in the bismuth ferrite thin film, and using the polarization direction of the ferroelectric domains as the weight symbol in the neural weights to set the non-volatile synaptic weights. The voltage on the bottom electrode is then removed or reduced, and a light spot is used to illuminate the bismuth ferrite thin film. By adjusting the position of the light spot, the differential current between the first and second electrodes is read and used as the weight value in the neural weights, thus realizing the read operation. This application achieves integrated storage and computing.

The application relates to a preparation method of a bismuth selenide film with adjustable defect concentration and application of the bismuth selenide film to a photoelectric synaptic device, and belongs to the technical field of two-dimensional photoelectric materials and photoelectric synaptic device preparation. The specific scheme is as follows: a Bi2Se3 film is prepared by adopting chemical vapor deposition, secondary treatment is conducted on the prepared Bi2Se3 film by in-situ heat treatment for avoiding air contact and keeping the original atmosphere to obtain a bismuth selenide film with adjustable defect concentration. The photoelectric synaptic device of the prepared bismuth selenide film is of an MSM structure, is simple in structure and has integration potential; the photoelectric response of the Bi2Se3 film photoelectric synaptic device has obvious basic synaptic behaviors of long-term potentiation, short-term potentiation and pulse enhancement, and can be applied to the field of artificial intelligence.

The application discloses a method for neural network online training and reasoning based on a CMOS transistor hybrid memory circuit, which adopts a CMOS transistor synapse device and a CMOS capacitor to form a synapse unit, replaces a traditional memristor and a ferroelectric capacitor, the writing durability of the CMOS transistor synapse device is far superior to that of the traditional memristor, the reading operation of the CMOS capacitor is non-destructive, the life loss caused by data rewriting is avoided, the whole process is realized based on a standard CMOS process, is fully compatible with an existing integrated circuit manufacturing process, and the hardware production cost is reduced, only analog weights are called in the reasoning stage to perform operation, and there is no additional data transmission; in the weight transmission stage, an external DAC is not needed, digital-to-analog conversion is realized by using a circuit parasitic parameter, and the energy consumption of an edge device is greatly reduced.

The present disclosure provides a back-end-of-line (BEOL) compatible ferroelectric capacitive synaptic device comprising a first metal electrode, a ferroelectric layer disposed on the first metal electrode, a semiconductor layer disposed on the ferroelectric layer, and a second metal electrode disposed on the semiconductor layer. The semiconductor layer comprises a material compatible with a back-end-of-line fabrication thermal budget temperature. The first metal electrode and the second metal electrode completely overlap with the ferroelectric layer and the semiconductor layer sandwiched therebetween. The BEOL compatible ferroelectric capacitive synaptic device is configured to switch between a high capacitance state and a low capacitance state by applying voltage pulses between the first metal electrode and the second metal electrode to flip dipole orientation in the ferroelectric layer. The device enables multi-tier three-dimensional stacking for in-memory computing applications.

Disclosed is a synaptic device, a reservoir computing device using the synaptic device, and a reservoir computing method using the reservoir computing device. The synaptic device includes a substrate and a plurality of units cells on the substrate, wherein the unit cells each include a channel layer and a first electrode and second electrode intersecting the channel layer, wherein the first electrode and the second electrode are spaced apart from each other, and define a gap region exposing a portion of the channel layer, and the channel layer includes a 2-dimensional semiconductor material or a 2-dimensional ferroelectric material.

This paper discloses a synaptic device based on a ferroelectrically modulated two-dimensional material field-effect transistor (FET) and its application in recurrent neural networks (RNNs), relating to the fields of artificial optoelectronic synaptic devices and neural network algorithms. The method uses the ferroelectrically modulated two-dimensional material FET synaptic device as a hidden layer unit in a RNN. First, a ferroelectrically modulated two-dimensional material (preferably α-In₂Se₃ / WSe₂ heterojunction) synaptic device is fabricated, and the electrical and synaptic behaviors of the FET are verified. The implementation mechanism of the two weight parameters Wx and Wh of the RNN in the device is determined, and their plasticity is achieved. The device output curve satisfying the RNN activation function is obtained through fitting, and the weight parameters are extracted to enable image processing tasks at the device end. This provides a device foundation for constructing an efficient, low-power integrated sensing and computing vision processing system.

The application belongs to the technical field of neuromorphic computing and artificial intelligence hardware, and discloses a high-linearity organic all-optical synapse thin film, a preparation method thereof, a synapse device and an optical dose sensing system. The thin film is formed by doping triphenylphosphine (TPP) as a host and N,N-dimethyl-1,1-binnaphthyl diamine (BINN) as a guest in a polymethyl methacrylate (PMMA) matrix, and then performing heat treatment to form a glassy blend thin film. Under the excitation of an ultraviolet light pulse, the light emission intensity of the thin film has a high-linearity growth relationship with the cumulative dose of the input light pulse, thereby forming a high-linearity organic all-optical synapse device. The application further provides an optical dose sensing system integrated with the device, which can linearly map the incident light dose to the light emission response of the device, and after photoelectric conversion and signal processing, realizes quantitative sensing and display of the optical dose. The application has excellent linearity, low energy consumption, simple preparation and high system integration.

This invention belongs to the field of semiconductor device technology, specifically relating to a method for fabricating amorphous gallium oxide photoelectric synaptic devices at room temperature and their applications. Amorphous gallium oxide channels are formed on a gate insulating dielectric layer using room temperature sputtering. By controlling the magnetron sputtering power, the amorphous gallium oxide layer is given an oxygen vacancy concentration suitable for generating continuous photoconductivity and synaptic response. The device generates postsynaptic currents under 254nm ultraviolet pulse irradiation, which can be used for simulating ultraviolet irradiation skin damage perception and pain sensitization. It can also convert sound data into cochlear images and further into postsynaptic current characteristics for snoring recognition. This solution combines room temperature fabrication, low power consumption, complete photoelectric synaptic functionality, and information processing capabilities for medical and health monitoring.

This application belongs to the field of biomimetic synaptic device control, specifically disclosing a multi-level state control method for all-optical synaptic devices based on PAWM modulation. This application uses a crystallization threshold light pulse as the control reference, and then constructs a real-time feedback closed loop: after each control pulse is applied, the change in optical response is immediately detected and compared with a preset range; if it deviates, the energy of subsequent pulses is adaptively adjusted based on PAWM technology. This closed-loop mechanism can correct the nonlinearity and randomness in the phase transition process in real time, ensuring that the step size of each state change is controllable and uniform. By cyclically executing this process, the optical state can gradually and stably transform through a large number of controlled fine-tunings. Compared with static or open-loop adjustment, high-precision linear control of the crystallization process is achieved, thereby significantly increasing the number of intermediate states, fundamentally improving the state resolution of the device, and realizing a leap from finite states to multi-level, approximately continuously adjustable states.

This invention relates to a photoelectrochemical synaptic device based on halogen-passivated quantum dots and its construction method, belonging to the field of artificial neuromorphic visual system technology. The method includes the following steps: synthesizing copper indium selenide sulfide (CISS) quantum dots; synthesizing CISS / zinc sulfide quantum dots; synthesizing a series of surface ligand-exchanged CISS / zinc sulfide quantum dots; preparing a series of novel quantum dot-sensitized photoanodes and assembling them into a photoelectrochemical synaptic device; this invention also includes CISS / zinc sulfide-halogen bromine ligand-passivated quantum dot materials, and photoelectrochemical synaptic devices using these materials as photoanodes. The beneficial effects of this invention are: inspired by the chemical regulation mechanism of transmembrane receptors in biological synapses, by introducing surface ligand exchange strategies such as halogen bromine ligands as a biomimetic strategy, the surface of quantum dots is chemically modified, and the separation / transfer efficiency of photogenerated excitons within the quantum dots is rationally regulated, effectively solving the problems of rapid recombination of electrons and holes and low photoelectric conversion efficiency in traditional quantum dots, thereby endowing photoelectrochemical synaptic devices with receptor-like regulatory capabilities.

This invention belongs to the field of optoelectronic light-emitting and display device technology, specifically relating to a light-emitting synaptic device based on a chiral heterojunction and its fabrication method. The light-emitting synaptic device based on a chiral heterojunction includes a substrate, an anode layer, a carrier modulation layer, a chiral selection layer, a light-emitting layer, and a cathode layer. The chiral selection layer is disposed between the light-emitting layer and at least one carrier modulation layer. The chiral selection layer is a chiral heterojunction, and the interlayer arrangement order of the light-emitting synaptic device is unrestricted. By introducing a chiral heterojunction as the chiral selection layer, the light-emitting synaptic device simultaneously achieves spin-selective detection and circularly polarized light emission functions within a single device structure, providing a new approach for fabricating integrated devices that combine circularly polarized light sensing, information processing and storage, and circularly polarized light emission functions.

Provided is a 3D stackable synapse string. The 3D stackable synapse string includes: a channel hole having a pillar shape extending in a vertical direction and filled with an insulating material; a first synapse string provided on a first surface of an outer peripheral surface of the channel hole, the first synapse string including a plurality of first synapse devices stacked along a vertical direction of the channel hole; a second synapse string provided on a second surface of the outer peripheral surface of the channel hole, the second synapse string including a plurality of second synapse devices stacked along the vertical direction of the channel hole; and a device isolation portion provided on the outer peripheral surface of the channel hole between the first and second synapse strings. The two synapse strings are electrically separated from each other by the device isolation portion.

This invention discloses a multi-physical quantity collaborative sensing neuromorphic synaptic device and its dynamic environment adaptive method, relating to the fields of neuromorphic synaptic devices and multi-physical quantity sensing technology. It includes: a multi-physical quantity sensing layer, comprising a temperature-sensitive unit, a humidity-sensitive unit, and a gas-sensitive unit; a memristor synaptic modulation layer; a collaborative control unit; a read / write control module; and an interface and integration module. All of the above structures are integrated onto a wearable carrier, achieving hardware-level collaboration between multi-physical quantity sensing and memristor synaptic weight control. This invention achieves accurate identification of interference types and differentiated anti-interference processing through dynamically updated interference source features combined with a lightweight machine learning classifier, overcoming the shortcomings of existing technologies such as fixed filtering thresholds, lack of dynamic interference feature libraries, and difficulty in coping with various interferences in complex environments. Simultaneously, by dynamically adjusting the feature matching threshold and the minimum threshold, the probability of clutter misjudgment is reduced.

This invention discloses an artificial neuromorphic device with short-term and long-term coupled memory modes. The device comprises, from bottom to top, a silicon substrate, an HfO2 layer, a SiO2 layer, and a C8-BTBT organic semiconductor layer; two Au electrodes are disposed on the C8-BTBT organic semiconductor layer. Based on a back-to-back Schottky diode synaptic device and incorporating the tunneling behavior of electrons in the SiO2 / HfO2 heterodielectric layer, this invention develops an artificial neuromorphic device coupling short-term and long-term memory modes, providing insights for further creating artificial neural systems that mimic human memory characteristics. This invention couples short-term and long-term memory modes, utilizing tunneling characteristics to adaptively modulate the capture mode. The resulting dual-mode coupled capture achieves long-term memory through the blocking effect of the tunnel layer. The feasibility of this strategy has been fully demonstrated in theory and experiments. Clear mode changes can be produced in tests with different pulse modes.

This invention discloses a synaptic device array and its fabrication method. The synaptic device array comprises a photodetector and an electrochromic device disposed on the photodetector. The photodetector includes a substrate, an arrayed electrode, and a photosensitive layer. The arrayed electrode is located on the substrate and includes several interdigital electrodes and a metal electrode pad. The photosensitive layer is composed of several perovskite thin films, with any one perovskite thin film completely covering the interdigital electrode. The electrochromic device comprises, from bottom to top, an Al2O3 insulating layer, an ITO electrode, a NiO electrode, an electrochromic layer, and an encapsulation layer. The electrochromic layer is composed of several electrochromic thin films, with the vertical projection surface of any one electrochromic film completely covering the vertical projection surface of the interdigital electrode. This invention achieves the coexistence of detection, storage, and computing capabilities within a single unit.