The invention provides an artificial synaptic device based on skyrmion. The artificial synaptic device comprises a bottom electrode layer, a heavy metal layer, a skyrmion layer, a tunneling barrier layer, a reference layer and a top electrode layer which are sequentially arranged from bottom to top, wherein the bottom surfaces of the bottom electrode layer, the heavy metal layer and the skyrmion layer are all circular, the diameter of the bottom surfaces is a first diameter, the bottom surfaces of the tunneling barrier layer, the reference layer and the top electrode layer are all circular, the diameter of the bottom surfaces is a second diameter, and the first diameter is greater than the second diameter. As the skyrmion has topological discontinuity in energy, the skyrmion has higher stability and lower system power consumption and area, and the skyrmion has the characteristics of being easy to move and not influenced by lattice pinning, so the artificial synaptic device based on theskyrmion is higher in speed, low in energy consumption and high in density.