161 results about "Synaptic device" patented technology

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention belongs to the technical field of integrated photoelectronics, and discloses a phase change photosynaptic device array and a preparation method thereof. The synaptic device array is of a cross array structure formed by a plurality of phase-change optical synaptic cells through directional couplers with the same number, an arc waveguide in each phase-change optical synaptic cell comprises a phase-change waveguide section, a heating layer is arranged above a phase-change material layer, and an isolating layer is arranged between a metal electrode and the waveguide. According to the synaptic device array, current joule heat generated by the heating layer under the action of electric pulses is transmitted to the phase-change material layer, so that the state of the phase-change material layer is changed, meanwhile, the isolation layer is used for shielding absorption and interference of the metal electrode on optical signals in the waveguide, and the optical loss of the array is reduced; therefore, the problem of heating structure integration of the phase-change photosynaptic device array can be effectively solved, and effective modulation of the phase-change photosynaptic device array is realized.

A three terminal neuromorphic synaptic device and a method for manufacturing the same are provided. The three terminal neuromorphic synaptic device includes a substrate, source / drain electrodes provided on the substrate, a channel region electrically connected between the source electrode and the drain electrode, an ion transfer layer provided on the channel region, a gate electrode provided on the ion transfer layer, and a voltage application unit to apply a gate voltage to the gate electrode. The ion transfer layer includes an electrolyte material to transfer an active ion of the gate electrode between the gate electrode and the channel region, in response to the gate voltage applied to the gate electrode. The voltage application unit adjusts a resistance and a conductance of the channel region by changing an amount of active ions accumulated in the channel region, depending on the number of times that the gate voltage is applied.

The invention discloses a photoelectric synapse device based on a floating gate structure and a preparation method. The photoelectric synapse device comprises a substrate; the Ta2NiSe5 nanosheet is prepared on the substrate, and the Ta2NiSe5 nanosheet is prepared on the substrate; the h-BN nanosheet is prepared on the substrate, and the h-BN nanosheet partially covers the Ta2NiSe5 nanosheet; the ReS2 nanosheet is prepared on the h-BN nanosheet; the control electrode is prepared on the part, not covered by the h-BN nanosheet, of the Ta2NiSe5 nanosheet, the source electrode and the drain electrode are prepared on the h-BN nanosheet, the ReS2 nanosheet is partially covered with the source electrode, the ReS2 nanosheet is partially covered with the drain electrode, and the part, covered with the ReS2 nanosheet, of the source electrode does not coincide with the part, covered with the ReS2 nanosheet, of the drain electrode. According to the photoelectric synapse device based on the floating gate structure, the number of carriers of the Ta2NiSe5 nanosheet layer and the number of carriers of the ReS2 nanosheet layer can be adjusted through a low gate voltage signal and a low-power optical signal so as to adjust the storage state, and the power consumption of the device is reduced on the premise that the data processing efficiency is guaranteed.

The invention discloses a multi-modal sensory artificial synaptic device based on a framework material and a preparation method and application thereof. The artificial synaptic device comprises a substrate and a channel, wherein the channel is arranged on the surface of the substrate; the channel is an amorphous organic metal framework film which responds to light and gas stimulation; the metal electrode is arranged on the surface of the channel; the metal electrode comprises a source electrode and a drain electrode. Compared with the prior art, the framework material with excellent photoelectric response performance is adopted, and a novel artificial synapse device with multi-mode sensing ability is constructed by fully utilizing the regular pore structure, large specific surface area and good photoresponse characteristic of the MOF material. The two electrodes of the device are connected into electrical test equipment, the conductivity of the amorphous MOF thin film can be changed under the stimulation of optical pulse signals, and finally simulation based on photoresponse synaptic plasticity is achieved. The device is placed in different gas environments, and the conductivity of the MOF film can be changed by capturing and releasing target gas molecules through the porous characteristic of the amorphous MOF material, so that simulation based on gas response synaptic plasticity is realized.

The application belongs to the technical field of two-dimensional material devices, and discloses a strain-enhanced multi-sensory fusion optoelectronic synapse device and a preparation method and application thereof. The optoelectronic synapse device comprises, from bottom to top, an insulating layer, an electrode and a functional layer. The material of the functional layer is an in-plane polarization two-dimensional ferroelectric material, and the functional layer is applied with a tensile strain along the direction of its own polar axis. The optoelectronic synapse device simulates the perception of visual information through the photoconductivity effect of the functional layer and simulates the sense of touch through the tensile strain. The synergistic effect of the photoconductivity effect and the tensile strain significantly enhances the persistent photoconductivity (PPC) of the synapse device, and the enhancement processing of a fingerprint image is realized through the characteristics of the device. At the same time, by applying the tensile strain along a specific direction, the in-plane polarization intensity is significantly improved, the constraint of the depolarization field is avoided, the stability and performance of the ferroelectric device are improved, and a new way for improving the performance of the optoelectronic synapse device is provided.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention provides a gallium oxide ultraviolet synaptic device and a preparation method thereof, and relates to the technical field of microelectronics, and the gallium oxide ultraviolet synaptic device comprises a substrate layer, a gallium oxide light absorption layer and a patterned electrode which are sequentially arranged from bottom to top; the gallium oxide light absorption layer is used for generating photon-generated carriers under excitation of an ultraviolet light signal, and the gallium oxide light absorption layer has a ferroelectric characteristic, so that integration of an ultraviolet photosensitive characteristic and the ferroelectric characteristic is realized. The invention aims to provide a novel gallium oxide ultraviolet synapse device, the device not only has excellent sensitivity to ultraviolet light and can effectively simulate key functions of biological synapses, but also the gallium oxide light absorption layer has ferroelectric characteristics and can realize integration of ultraviolet photosensitive characteristics and ferroelectric characteristics, so that the device has good application prospects. And the method has important significance for further expanding the performance of the nerve synapse.

The embodiment of the invention discloses a photoelectric synapse device, the photoelectric synapse device has an optical synapse characteristic in a spectral response range of 520 nm to 2000 nm from visible light to infrared light, the photoelectric synapse device comprises a Van der Waals heterojunction formed by upper graphene / CrOCl / lower graphene, and the Van der Waals heterojunction is formed by the upper graphene / CrOCl / lower graphene. The CrOCl serves as a middle layer and is clamped between the upper-layer graphene and the lower-layer graphene, the number of the upper-layer graphene used for receiving light is 5-10, and the thickness of the CrOCl is set to enable the photoelectric synapse device to be capable of being tunneled when the photoelectric synapse device is irradiated by visible light or infrared light. The photoelectric synaptic device disclosed by the invention efficiently simulates optical synaptic behaviors in a wide spectral range of 520-2000 nm, and has adjustable pulse time sequence dependence plasticity, pulse number dependence plasticity, pulse frequency dependence plasticity and paired pulse promotion. The invention also discloses a preparation method and application of the photoelectric synaptic device.

The invention discloses a photon convolutional neural network system, which belongs to the technical field of optical neural networks and comprises dynamic convolution kernel modules in one-to-one correspondence with convolution layers in a pre-trained convolutional neural network model. The dynamic convolution kernel module comprises a photon synaptic device based on a phase change material, and convolution kernel weights corresponding to convolution layers are stored in the photon synaptic device in a non-volatile manner; before the dynamic convolution kernel module performs convolution operation, according to a dynamic coefficient generated by a coefficient generation model according to the content of input data, the weight of a corresponding photon synaptic device in the dynamic convolution kernel module is dynamically adjusted in a maladjustment-prone mode, so that the dynamic convolution kernel module can flexibly adapt to the change of the input data; according to the invention, coding is carried out not only depending on a non-volatile phase state of a phase change material, and volatile modulation coding is further introduced on the basis, so that the coding expression capability of a dynamic convolution kernel module is greatly enriched; on the basis, the feature extraction capability of the convolution kernel in the photon convolutional neural network system provided by the invention is relatively high.

The invention discloses a double-end photoelectric synapse element based on two-dimensional intrinsic ferroelectricity and TMDs Van der Waals heterojunction as well as a preparation method and application of the double-end photoelectric synapse element, and belongs to the technical field of photoelectric synapses. The element comprises a substrate layer, a channel layer and a packaging layer which are stacked in sequence, the channel layer is formed by stacking a single layer of two-dimensional TMDs and a two-dimensional intrinsic ferroelectric alpha-indium selenide layer; a source electrode is deposited on the TMDs, and a drain electrode is deposited on the alpha-indium selenide layer. The preparation method of the element comprises the following steps: cleaning the substrate layer, growing the single-layer two-dimensional TMDs through a CVD (chemical vapor deposition) method, and stacking the two-dimensional intrinsic ferroelectric alpha-indium selenide layer on the single-layer two-dimensional TMDs to obtain a precursor; the precursor is sequentially subjected to primary annealing, etching and electrode evaporation, and then is subjected to secondary annealing, so that the electrode is obtained. The element adopts photoelectric signal hybrid regulation and control, is used for preparing an artificial brain-like synapse device, and can effectively solve the problems of high power consumption and low dipulse dissimilation index in the prior art.

The invention relates to a flexible weak ultraviolet photoelectric synapse device and a manufacturing method thereof. The flexible weak ultraviolet photoelectric synapse device is composed of a flexible electrode substrate, a GO thin film, a ZnO nanowire and an electrode. Wherein the GO thin film and the ZnO nanowire of the device form a ZnO / GO heterostructure, and the ZnO / GO heterostructure can capture electrons by utilizing rich oxygen-containing functional groups in the two-dimensional material graphene oxide, so that the recombination of electron holes is inhibited. The advantages of low defect density, high radiation resistance, environment friendliness and the like of the ZnO-based material are combined, so that dark current and noise current are effectively reduced, weak light identification is realized, and continuous photoconduction is enhanced. According to the method, a ZnO / GO heterostructure is independently designed, and the ZnO / GO heterostructure is transferred to the surface of the flexible electrode substrate by using a wet transfer process, so that the flexible weak ultraviolet photoelectric synapse device is prepared at a relatively low temperature. The preparation method is simple and economical, raw materials are easy to obtain, and large-area preparation can be achieved.

The invention discloses an optical synaptic device based on molybdenum disulfide and chiral perovskite and a preparation method of the optical synaptic device, and relates to the technical field of synaptic devices, the optical synaptic device comprises a substrate, a chiral perovskite layer, a MoS2 layer and a metal electrode which are arranged in sequence, the MoS2 layer completely covers the chiral perovskite layer, and the metal electrode covers the MoS2 layer. A non-contact region which is not in contact with the chiral perovskite layer is remained, and the metal electrode is positioned in the non-contact region of the MoS2 layer. According to the invention, the processing capability of the optical synapse device on the circularly polarized light signal is improved.

The embodiment of the invention discloses a ferroelectric domain wall neuronal synaptic device, a regulation and control method thereof and a neural network device. The ferroelectric domain wall nerve synapse device comprises a ferroelectric domain wall unit and an electric field forming unit; each ferroelectric domain wall unit comprises a single crystal substrate layer, a bottom electrode layer and a ferroelectric material layer which are stacked in sequence; and the electric field forming unit is used for forming an equivalent electric field according to the received pulse signal and loading the equivalent electric field on the ferroelectric domain wall unit so as to regulate and control the conductivity value of the ferroelectric domain wall unit. According to the embodiment, the electric field forming unit in the ferroelectric domain wall neural synapse device receives the pulse signal to form the equivalent electric field, and the equivalent electric field is loaded on the ferroelectric domain wall unit to regulate and control the conductivity value of the ferroelectric domain wall unit, so that integration of information storage and neural morphology calculation can be realized; the method has the advantages of being low in environmental influence degree, stable in resistance state, low in energy consumption, high in calculation speed and the like, and has wide application prospects.

The invention provides a photoelectric synapse device and a modulation method and application thereof, and belongs to the technical field of artificial synapses. The photoelectric synaptic device comprises a substrate; a floating gate layer; a tunneling layer; the channel layer is located on the tunneling layer, the channel layer comprises a rhenium disulfide two-dimensional material layer, the channel layer generates photo-generated electron-hole pairs under the action of light pulses, and meanwhile, the floating gate layer is suitable for receiving photo-generated holes to regulate and control conductivity of the channel layer; the source electrode and the drain electrode are respectively positioned on the channel layer; wherein the initial state of the channel layer presents the write-in state of the first conductance, and the photoelectric synapse device presents a plurality of erase states respectively corresponding to the plurality of erase conductance by regulating and controlling the parameters of the optical pulse incident to the channel layer; after the channel layer is in the erasing state of the second conductance, forward electric pulses are applied to the substrate, so that the photoelectric synapse device recovers the writing state of the first conductance; wherein the first conductance is smaller than the second conductance, and the second conductance is the largest erasing conductance in the multiple erasing conductance.

This invention discloses an organic synaptic device with high polarization sensitivity and a method for its preparation, belonging to the fields of optoelectronic materials and neuromorphic computing. The device comprises, from bottom to top, a first solid-phase substrate, a capture layer, and an active layer. The active layer comprises a first and second two-dimensional organic molecular crystal films, both in contact with the capture layer. The second two-dimensional organic molecular crystal film partially overlies the first two-dimensional organic molecular crystal film to form a type II bandgap heterojunction. A first electrode is disposed on the surface of the first two-dimensional organic molecular crystal film, and a second electrode is disposed on the second two-dimensional organic molecular crystal film. This device successfully overcomes the intrinsic anisotropy limitations of two-dimensional semiconductor materials, significantly reducing device noise while significantly enhancing both light response intensity and polarization detection capabilities.

The present application belongs to the technical field of nanoelectronic devices, and provides an integrated gas sensing-computing synaptic device and a preparation method therefor. The device comprises: a first functional layer, a barrier layer, a second functional layer, a first metal electrode, and a second metal electrode; the first functional layer is heavily doped silicon; the second functional layer uses CuOx material, such that defect energy levels are formed by interstitial oxygen and copper vacancies; the barrier layer increases contact area between the second functional layer and a test gas; a direct current voltage scan is applied between the first metal electrode and the second metal electrode, to simulate resistive switching behavior of a memristor; the second functional layer reacts with the test gas, to implement a gas sensing function; a constant voltage signal is applied between the first metal electrode and the second metal electrode, and in a gas pulse environment, a current response state exhibits a synaptic response. The present application can implement in-situ sensing and processing of gas information, improving information processing efficiency, and the gas information inference method of the integrated gas sensing-computing device is simpler.

The application discloses an ultra-compact non-volatile photonic neural synapse device and belongs to the field of optical computing. The device comprises a substrate, a ridge waveguide, a phase change film and a metal film. The ridge waveguide is arranged above the substrate and covers the whole substrate area. The phase change film is distributed above the ridge type area of the ridge waveguide. The metal film covers the phase change film and has the same geometric parameters as the phase change film. The base mode in the ridge waveguide and the surface plasmon polariton (SPPs) mode of the interface between the phase change film and the metal film form a superimposed light field. The geometric structure of the ridge waveguide will affect the effective mode refractive index of the superimposed mode. The length of the modulation area is further optimized to realize different normalized intensity outputs. By changing the phase state (crystalline state and amorphous state) of the phase change film, the photonic neural synapse has a large output intensity difference under the condition that the phase change film has different phase states.

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The application discloses a kind of based on laminated CrOCl auxiliary storage's floating gate structure optoelectronic synapse device and preparation method, belong to semiconductor device technical field.Device includes by lower to upper sequentially arranged substrate, Gr nanosheet, CrOCl nanosheet, h-BN nanosheet and MoS2 Nanosheet, wherein, MoS2 Nanosheet two ends are connected with active electrode and drain electrode, Gr nanosheet, CrOCl nanosheet, h-BN nanosheet and MoS2 Nanosheet are combined by Van der Waals interaction;MoS2 / h-BN / CrOCl / Gr floating gate optoelectronic synapse device of the application can effectively increase double scanning storage window by the secondary adsorption electron capacity of CrOCl, widen multi-level storage capacity, can realize multi-level storage under the joint modulation of electric pulse and light pulse, show excellent electrical writing and optical erasing technology in photoelectric hybrid storage, in addition, under the common modulation of photoelectricity, show good synapse characteristics, including long-term plasticity, short-term plasticity, the recognition accuracy of neural network constructed by MoS2 / h-BN / CrOCl / Gr floating gate device of the application can reach 97% on direction identification data set.

The invention discloses a non-contact handwriting device based on an ultraviolet specific image sensor and a preparation method, and relates to the technical field of image sensing and human-computer interaction. Comprising a glass substrate 1, a transparent thin film transistor array 2 formed on the substrate, a photosensitive material layer 3 formed on the thin film transistor array, and an ultraviolet curing adhesive packaging layer 4 covering the photosensitive material layer. A light-sensitive material is a Bi2S3 material with a wavelength selective light current memory characteristic, generates long-time light current maintenance based on a photo-thermal electric effect in an ultraviolet band, rapidly attenuates in visible to near-infrared bands, and has ultraviolet input selectivity and ambient light anti-interference capability. According to the system, an ultraviolet laser pen is used as an input tool, handwriting patterns which can be kept for a long time are formed on an image sensor array, and image erasing based on a background normalization mechanism is supported. The image sensor array is composed of synaptic-like devices, has a long-term optical memory characteristic, and realizes integration of perception and storage.

The invention discloses a sensing and storage calculation integration method of an electrophysiological sensing device and an artificial synaptic storage calculation device, relates to the technical field of neuromorphic calculation, and aims to solve the problem of separation of wearable health monitoring sensing and storage calculation. The method comprises the following steps: S1, precisely preparing two-dimensional MXene by a liquid phase etching method; s2, constructing an MXene electrophysiological sensing device; s3, constructing an MXene artificial synaptic device; s4, the MXene electrophysiological sensing device in the step S2 and the MXene artificial synapse device in the step S3 are integrated; wherein the step S4 specifically comprises the following steps: S4-1, leading out a source electrode, a grid electrode and a drain electrode of the MXene artificial synapse device through a bonding machine instrument, connecting the grid electrode with the MXene electrophysiological sensor, applying a voltage of 100mV to the source electrode of the MXene artificial synapse device, testing a current change value of a channel material of the MXene artificial synapse device by the drain electrode, and presenting a curve through a mobile terminal, therefore, the human body electrophysiology compression signal can be presented.

This invention discloses a design and operation method for a multimodal optoelectronic synaptic device based on the synergy of asymmetric structure and defects. The method includes constructing a device with a two-terminal asymmetric structure, consisting of a metal layer / functional layer 1 / functional layer 2 / electrode. The core lies in forming a two-terminal asymmetric functional junction (Schottky junction / heterojunction) on both sides of functional layer 1. This invention utilizes the unified yet differentiated response dynamics (migration and recombination) of defects such as oxygen vacancies in the functional layer to light and electrical signals, achieving a response within an order of magnitude of specific encoded light and electrical signals in a single device. This enables weighted fusion of multimodal signals, non-volatile storage, and selective decoupling. This method is independent of specific material systems (including oxide types, electrode types, doping, etc.) and fabrication processes, providing core operational logic for constructing general-purpose neuromorphic hardware capable of performing in-situ sensing and computation.

This invention discloses a fully optically modulated photoelectric synaptic device, its fabrication method, and its applications. This device successfully simulates the synaptic behavior of nerve cells within the ultraviolet to visible light spectrum. Furthermore, the device exhibits positive responses to both ultraviolet and visible light, with an increase in photocurrent. However, when irradiated with ultraviolet light first and then with visible light, the visible light inhibits the photocurrent generated by the ultraviolet light, causing a rapid decrease in photocurrent.

This invention discloses a photonic neural synapse device with a dual-micro-ring structure and a convolutional computation network model. The device includes a front resonant ring, a rear resonant ring, and two coupled phase-change material (PCM) films. The two PCM films are matched and correspond to the front and rear resonant rings, respectively. Synaptic weighting is achieved by controlling the coupled PCM films. The front and rear resonant rings are used to split the input optical signal in the bus waveguide into a 50:50 ratio, and output the difference signal current through a balanced photodetector. The photonic neural synapse of this invention has the advantages of high bandwidth and high speed. Once the synaptic weights are determined, it is a passive device with theoretically zero power consumption. Furthermore, this invention designs a dual-micro-ring structure, which ensures that the modulation of light does not affect the resonant wavelength, improving modulation accuracy, reducing optical transmission loss, and broadening the range of synaptic weights. This invention can be widely applied in the field of micro-nano optoelectronics.

The present invention discloses a neural network testing system based on an electronic synapse array. The system comprises a control system, an array test circuit board, and an electronic synapse array. The control system is a SoC development board containing an ARM module and an FPGA module, capable of reconfigurably writing array test and in-memory calculation programs. The array test circuit board includes an analog-to-digital / digital-to-analog conversion module and a multiplexer module, which is connected to the electronic synapse array via pin headers. The electronic synapse array is composed of multiple non-volatile, polymorphic artificial electronic synapse devices, arranged in an m-row, n-column array structure using a crossover process. The array is connected to the word line (WL) and bit line (BL) drivers of the array test circuit board via pin headers. The synapses receive input signals from the array test circuit board, and the readout signals reflect the storage state of the corresponding unit synapse devices. The system has high read and write accuracy, improving the flexibility of testing the electronic synapse array.

The invention relates to the technical field of optical equipment, and provides a spectrum detection device and a spectrum detection method.The spectrum detection device comprises an artificial synaptic assembly and a signal processing assembly, and the artificial synaptic assembly comprises a plurality of artificial synaptic devices and is used for responding according to different wavelengths of incident light and outputting corresponding induced currents; the signal processing assembly is connected with the plurality of artificial synaptic devices and is used for receiving the induced current and carrying out amplification, analog-to-digital conversion and analysis so as to reconstruct spectral information of the incident light, the artificial synaptic assemblies are directly irradiated by light to be detected, and the corresponding induced current is output by utilizing the artificial synaptic assemblies; the induced current is transmitted to the signal processing assembly, and spectral information of the light to be detected can be output after processing, so that a complex scanning part is not needed, the detection architecture is simplified, the power consumption is reduced, and integrated application is facilitated.

The present application provides a gas sensing and computing integrated synaptic device and its preparation method, which belongs to the technical field of nanoelectronic devices. The device includes: a first functional layer, a barrier layer, a second functional layer, a first metal electrode and a second metal electrode; the first functional layer is heavily doped silicon; the second functional layer is CuO x The material is provided with defect energy levels formed by interstitial oxygen and copper vacancies; the barrier layer increases the contact area between the second functional layer and the test gas; a DC voltage sweep is applied between the first metal electrode and the second metal electrode to simulate the resistive switching behavior of the memristor; the second functional layer reacts with the test gas to realize the sensing function of the test gas; a constant voltage signal is applied between the first metal electrode and the second metal electrode, and in a gas pulse environment, the current response state presents a synaptic response; the present application can realize in-situ sensing and processing of gas information, improve information processing efficiency, and the gas information inference method of the gas sensing and computing integrated device is simpler.

The invention provides a polymorphic synaptic device based on probability flipping and a modulation method thereof, and relates to the technical field of semiconductor devices. The polymorphic neurosynaptic device comprises a plurality of probability devices which are connected in series; wherein the resistance state of each probabilistic device presents a probabilistic high resistance state or low resistance state according to different input pulse current densities; and simulating the weight of the neuronal synapse by using the total voltage of series connection of a plurality of probability devices or the total output voltage of multiple pulse currents of the same probability device, thereby realizing the artificial synapse device for neuromorphic calculation. The polymorphic neuronal synaptic device can enable neuromorphic calculation to be transformed from deterministic simulation to random bionic simulation, and has unique advantages in scenes such as adaptive learning and uncertain reasoning.

A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.