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Ferroelectric polarization regulated artificial synaptic device and preparation method thereof

A synaptic device and ferroelectric technology, applied in the field of artificial synaptic devices based on organic ferroelectric polarization regulation and their preparation, can solve the problems of poor repeatability and uniformity of memristors, limiting the development of memristors, etc. Achieve good fatigue characteristics, long life, improved stability and repeatability

Inactive Publication Date: 2020-04-28
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the movement of ions driven by the inhomogeneous electric field further increases the inhomogeneity of the electric field, the performance of this type of memristor has very poor repeatability and poor uniformity between different devices.
This greatly limits the development of memristors in circuit integration, so it is very important to explore new memristor devices with high speed, high stability and high repeatability

Method used

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  • Ferroelectric polarization regulated artificial synaptic device and preparation method thereof
  • Ferroelectric polarization regulated artificial synaptic device and preparation method thereof
  • Ferroelectric polarization regulated artificial synaptic device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Prepare artificial synaptic devices based on organic ferroelectrics according to the following steps:

[0032] 1) Substrate selection: select heavily doped p-type silicon with a thickness of 0.5mm as substrate 1, and perform single-sided polishing

[0033] Light processing.

[0034] 2) Preparation of oxide dielectric layer: thermally oxidize 285nm silicon dioxide to SiO on the surface of p-type silicon 2 / Si's oxide layer 2.

[0035] 3) Two-dimensional semiconductor transfer preparation: use tape to transfer the MoS of transition metal chalcogenide 2 The crystal is removed mechanically and transferred to SiO 2 / Si on the oxide layer 2, its MoS 2 The thickness is three molecular layers.

[0036] 4) Preparation of metal source and drain electrodes: the electrode pattern is prepared by the ultraviolet lithography method, and then the metal electrode with 5nm chromium and 30nm gold as the source / drain electrode is prepared by thermal evaporation technology. 4, combined with the lift-...

Embodiment 2

[0046] Prepare artificial synaptic devices based on organic ferroelectrics according to the following steps:

[0047] 1) Substrate selection: Use heavily doped p-type silicon with a thickness of 0.5 mm as substrate 1, and perform single-sided polishing.

[0048] 2) Preparation of oxide dielectric layer: thermally oxidize 285nm silicon dioxide to SiO on the surface of p-type silicon 2 / Si's oxide layer 2.

[0049] 3) Two-dimensional semiconductor transfer preparation: tape the WSe of the transition metal chalcogenide 2 The crystal is removed mechanically and transferred to SiO 2 / Si on the oxide layer 2, its MoS 2 The thickness is five molecular layers.

[0050] 4) Preparation of metal source and drain electrodes: the electrode pattern is prepared by ultraviolet lithography, and then the metal electrode with 5nm chromium and 30nm gold is prepared by thermal evaporation technology, combined with the lift-off method, the source / drain electrode is stripped off the metal film 4 , A back ga...

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Abstract

The invention relates to a ferroelectric polarization regulated artificial synaptic device and a preparation method thereof. The method is characterized in that a two-dimensional semiconductor layer,a source / drain electrode, a ferroelectric functional layer and a gate electrode are sequentially prepared on a substrate to form a ferroelectric polarization regulated artificial synaptic structure, and the two-dimensional semiconductor is a MoS2 or WSe2 transition metal chalcogenide coating; the ferroelectric functional layer is a polyvinylidene fluoride-based ferroelectric polymer film; the preparation of the synaptic device comprises the preparation of an SiO2 / Si layer, the transition metal chalcogenide layer, a back gate structure, a polyvinylidene fluoride layer and a metal top gate electrode. Compared with the prior art, the artificial synaptic device has the advantages of ultra-low power consumption, long service life and the like, the organic ferroelectric transistor synapse has avery good prospect due to the characteristics, a large-scale neural structure network can be promoted to simulate a human brain, and large-scale parallelism and low-power-consumption operation in a human brain algorithm network can be enlightened.

Description

Technical field [0001] The invention relates to the field of field-effect transistor electronics technology, in particular to an artificial synapse device based on the regulation of organic iron electric polarization and a preparation method thereof. Background technique [0002] Traditional digital computers have insufficient performance in the fields of automatic control, pattern recognition, associative memory, and signal processing. Therefore, it is urgent to find a technology that breaks through the original system to achieve fast, light, and low-power hardware that mimics the human brain and develops Neuromorphic computers are the direction for scientists to seek breakthroughs. Each neuron in the human brain is connected to thousands of neurons through synapses, and conducts signals in a distributed and concurrent manner, which makes up for the lack of single neuron processing speed. The connection strength between neuronal synapses can be adjusted by the relative pulse ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/12H10K85/141H10K10/471
Inventor 田博博段纯刚朱秋香闫梦阁
Owner EAST CHINA NORMAL UNIV
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