1077results about How to "Avoid charging" patented technology

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

A contactless power transmitting device is provided including a power transmitting device functioning as a charger, a power transmitting-receiving sharing device functioning as a charger and including a secondary battery, and a power receiving device including a secondary battery. The power transmitting-receiving sharing device is used as a power supply for portable computers. The power receiving device is used as a power supply for cellular phones. The power transmitting device forms a contactless power transmitting device respectively by electromagnetically coupling to either the power transmitting-receiving sharing device or the power receiving device to charge the secondary battery or the secondary battery. The power transmitting-receiving sharing device forms the contactless power transmitting device by electromagnetically coupling to the power receiving device. In this case, the power transmitting-receiving sharing device charges the secondary battery included in the power receiving device.

A battery charger may include a charger connector to be coupled to a corresponding device connector of a portable device including a rechargeable battery. The battery charger may also include a charging circuit connected to the charger connector, and a controller connected to the charger connector and the charging circuit. The controller may be for causing a portable device connected to the charger connector to identify its corresponding portable device type and its corresponding rechargeable battery type from among a plurality of different portable device types and different battery types, and for causing the charging circuit to charge the rechargeable battery based thereon.

A charge pump is configured to receive an external voltage level and generate a high voltage level, wherein the high voltage level is higher than the external voltage level. A memory control circuit is configured to receive the external voltage level and the high voltage level, and to select one of the voltage levels. A memory array, with a word line and a bit line, is configured to receive the external and high voltage levels at the word line and the high voltage levels at the bit line. A word line driver is configured to provide the external and high voltage levels to the word line. A bit line selector is configured to select the bit line and receive the high, external, and regulated voltage levels. A bit line driver is configured to provide the external voltage levels to the bit line selector.

An object is to provide a semiconductor device including an RFID which can transmit / receive individual information without a change of a battery accompanied by deterioration over time of the battery as a drive power source, and to which driving power can be supplied to keep a favorable transmission / reception state of the individual information even when an external electromagnetic wave is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit and a second antenna circuit operationally connected to the signal processing circuit, and a battery operationally connected to the signal processing circuit, in which the first antenna circuit transmits / receives a signal for transmitting data stored in the signal processing circuit; the second antenna circuit receives a signal for charging the battery; and a signal received by the first antenna circuit and a signal received by the second antenna circuit have different wavelengths.

A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.