5results about How to "Improve communication distance" patented technology

This invention relates to the field of radio frequency communication technology and discloses a communication frequency selection method and apparatus based on RSSI. The method includes: sweeping a target frequency band using step units to obtain a set of sweep points; performing peak detection on the sweep point set to obtain the peak received signal strength and interference frequencies; calculating at least one third-order intermodulation point within the target frequency band based on each interference frequency; fitting the sweep point set, each interference frequency, and each third-order intermodulation point to obtain a target sweep point set; performing weighted calculations on each target sweep point in the target sweep point set based on antenna weighting coefficients and the center frequency to obtain a received signal strength weighted value; and selecting the optimal frequency point based on each received signal strength weighted value. Therefore, implementing this invention can improve the accuracy and reliability of communication frequency selection, extend communication distance, and ensure the comprehensiveness and accuracy of frequency selection, thereby improving the stability and anti-interference capability of wireless audio communication.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The utility model belongs to full duplex communication technical field, concretely relates to a kind of conversion circuit, conversion module and data transmission device.Conversion circuit is used to realize TTL full duplex communication based on RS-485 interface, including first 485 chip, second 485 chip, first filter unit, second filter unit, first matching resistance, second matching resistance, data transmission interface;First 485 chip is used to electrically connected the RX end of TTL serial port, and with the receiving output end electrically connected of first filter unit, first matching resistance, data transmission interface;Second 485 chip is used to electrically connected the TX end of TTL serial port, and with the sending input end electrically connected of second filter unit, second matching resistance, data transmission interface, to this realizes a kind of communication technical scheme with the advantage of serial port TTL communication and RS-485 communication.

This disclosure provides a metasurface antenna element, comprising a first metal layer, a first dielectric substrate, a second metal layer, a second dielectric substrate, and a third metal layer stacked sequentially; the second metal layer has various shaped cutouts; the orthographic projections of the first dielectric substrate, the second dielectric substrate, and the second metal layer on a preset surface coincide, and their orthographic projection outlines are all first regular polygons; the orthographic projections of the first metal layer and the third metal layer on the preset surface coincide, and their orthographic projection outlines are all second regular polygons; the side length of the first regular polygon is a first preset multiple of the incident wave wavelength at the center frequency, and the side length of the second regular polygon is a second preset multiple of the incident wave wavelength at the center frequency, wherein both the first preset multiple and the second preset multiple are less than 1. This disclosure also provides an antenna structure.

This application discloses a power distribution component and a power grid system. The power distribution component includes a main control box, sub-control boxes, and a first line. The main control box is used for electrical connection to the mains power grid and for electrical connection to loads and / or household distribution boxes. The sub-control boxes are separately installed from the main control box and are used for electrical connection to energy storage devices. The first line electrically connects the sub-control boxes and the main control box, and power is transmitted between the sub-control boxes and the main control box through the first line. The sub-control boxes and the main control box communicate via power line carrier communication through the first line, eliminating the need for additional communication lines. The power distribution component integrates power supply and communication, and the main control box and sub-control boxes can be arranged separately without distance requirements, increasing the installation flexibility of the power distribution component and expanding the application scenarios and scope of use for the power distribution component and energy storage devices.