1271 results about "Spin coating" patented technology

The invention provides a perovskite thin film and a preparation method thereof, and belongs to the technical field of perovskite thin films, and the preparation method comprises the following steps: S1, preparing modified octa (aminophenyl trioxosilane); s2, preparing a precursor solution; and S3, spin-coating the pretreated substrate with the precursor solution, dropwise adding ethyl acetate at the same time, performing illumination treatment under ultraviolet light, and then immediately performing micro-vibration and curing annealing on the substrate to obtain the perovskite thin film. According to the perovskite thin film obtained by the invention, the purposes of synchronously increasing the open-circuit voltage and the filling factor of a solar cell, improving the photoelectric conversion efficiency and enhancing the long-term stability can be achieved.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention discloses a photoresist micro-lens array preparation method and system, and relates to the field of micro-nano optical device manufacturing. The preparation method of the photoresist micro-lens array comprises the following steps: carrying out chemical mechanical polishing treatment on a silicon wafer, spin-coating photoresist on a substrate to form a cylindrical array, and eliminating solvent gradient through pre-drying; forming a fluorocarbon nano film on the surface of the photoresist through plasma deposition so as to reduce the surface energy of the photoresist; realizing hot reflux of the photoresist based on gradient annealing, wherein the gradient annealing comprises a preheating section, a main reflux section and a stable section; on the basis of the preheating section, glass transition stress is avoided, fluorine-containing gas and inert gas are synchronously introduced into the main backflow section to act on a plasma sheath layer, so that the flowing direction of photoresist is regulated and controlled, and the edge coffee ring effect is inhibited; the stable section synchronously performs plasma assistance to lock the shape; and the precision and the consistency of the micro-lens array are improved through segmented temperature regulation and control and a plasma auxiliary technology.

The invention discloses a preparation method and application of a three-dimensional star-shaped polyhedral polymer bulk phase modified efficient and stable perovskite solar cell, and relates to the technical field of solar photovoltaics. The method comprises the following steps: coating a perovskite precursor solution on a substrate for spin-coating operation, dropwise adding an anti-solvent containing a three-dimensional star-shaped polyhedral polymer in the spin-coating process, then continuing spin-coating for 10-20 seconds, and annealing at 100-120 DEG C for 15-30 minutes to obtain the three-dimensional star-shaped polyhedral polymer bulk phase modified efficient and stable perovskite thin film. According to the invention, the perovskite solar cell is prepared based on the bulk phase modification of the three-dimensional star-shaped polyhedral polymer, and the efficiency and stability of the perovskite cell are improved by regulating the modification concentration of the polymer.

The invention provides a wafer thinning equipment control method and device, electronic equipment and a storage medium, and relates to the technical field of wafer thinning. The method comprises the following steps: monitoring spreading and thinning behaviors of a spin-coating liquid film in real time and generating a residual layer distribution diagram; according to an area indicated by the residual layer distribution map, obtaining local thickness information by analyzing a fluorescence signal received from the area; after a laser beam is used for scanning the surface of the wafer, micro-vibration signals are recognized and extracted by analyzing reflected light signals; dividing the surface of the wafer into a plurality of grid areas; and the risk of generating cracks in each grid area is evaluated, and a wafer surface risk thermodynamic diagram used for controlling the grinding head and the grinding fluid is generated. The method aims at solving a series of problems caused by a microcosmic residual layer on the surface of the wafer or surface energy difference in the wafer thinning process, early and accurate sensing of microcosmic abnormity on the surface of the wafer is achieved, and a control system is guided to conduct regional and self-adaptive grinding parameter adjustment.

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

The invention relates to a diffusion-resistant layer enhanced high-temperature oxidation-resistant composite ceramic coating for a niobium surface and a preparation process thereof. The coating system is composed of a diffusion layer, an anti-diffusion layer and a composite ceramic coating in sequence. In the preparation process, the Al2O3 diffusion-resistant layer is accurately constructed by adopting a slurry spin-coating method, and the method can realize accurate regulation and control of the thickness of the diffusion-resistant layer, so that uniform distribution of the Al2O3 layer is ensured. The introduction of the diffusion-resistant layer significantly improves the high-temperature stability and oxidation resistance of the coating, effectively delays the oxidation process of the material under an extreme high-temperature condition, and greatly prolongs the service life of the material.

The invention discloses a cellulose derivative doped perovskite active layer, a preparation method thereof and a perovskite solar cell, and relates to the technical field of solar cells, and the preparation method comprises the steps: dissolving PbI2, PbBr2, CsI, MABr, FAI and MACl in a solvent to obtain a mixed solution; adding HPMCP into the mixed solution to obtain a perovskite precursor solution; and in a protective gas atmosphere, spin-coating the perovskite precursor solution on a substrate, dropwise adding chlorobenzene in the spin-coating process, and heating the substrate after spin-coating to obtain the perovskite active layer. The method has the beneficial effects that the leakage of lead in perovskite is effectively inhibited by utilizing the physical wrapping effect of HPMCP and the strong coordinate bond effect and hydrogen bond effect of perovskite, the quality of a perovskite active layer thin film can be improved, grain boundary defects are effectively passivated, ion migration is inhibited, and good optical performance is achieved; the photoelectric conversion efficiency and the environmental stability of the halogen hybrid perovskite solar cell device are effectively improved.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention belongs to the technical field of construction of super-hydrophobic surfaces, and particularly relates to a preparation method of a super-hydrophobic coating with a multistage micro-nano structure. Comprising the following steps: pretreating a substrate; slowly adding the F-SiO2 nanoparticle dispersion liquid into the fluorine-containing glue solution under the synergistic treatment of ultrasonic and magnetic stirring to obtain an F-SiO2 / fluorine-containing glue composite solution; the method comprises the following steps: determining the actual glue coating amount based on the theoretical glue demand amount of a PDMS template, and coating the F-SiO2 / fluorine-containing glue composite solution on the surface of a substrate through spin coating to form a wet film; coining the wet film by using a PDMS template, and stripping the template after ultraviolet curing to obtain the super-hydrophobic coating with the multistage micro-nano structure. Based on an imprint method with insufficient glue amount, synchronous construction of a micro / nano dual-scale structure is achieved by accurately controlling the ratio of the volume of the coating liquid to the volume of the pore of the template and combining the curing shrinkage characteristic of the polymer, and the method has application potential in the fields of anti-icing, microfluid devices, marine antifouling and the like.

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The present invention generally relates to a process for fabricating a reduced graphene oxide (rGO)-based antifouling marine coating is disclosed. The process begins with preparing a dispersed graphene oxide solution, followed by chemical reduction using hydrazine hydrate at 90-95° C. for 3 hours to form a dispersed rGO solution. This solution is then washed, filtered, and sonicated for 6 hours to ensure stability. A polymer solution is prepared by dissolving 40-50 wt % epoxy resin in acetone at 50° C. The antifouling composite is then formed by combining the rGO solution, 10-15 wt % zinc oxide nanoparticles, and 1-5 wt % carbon nanotubes with the polymer solution, followed by 6 hours of sonication at room temperature. Finally, the resulting composite material is applied to a substrate as a coating using spraying, brushing, dipping, or spin coating. This coating offers a promising solution for preventing biofouling on marine structures.

The invention provides a preparation method of a nano super-hydrophobic material. The preparation method comprises the following steps: firstly, selecting nano silicon dioxide particles with the particle size of 20-50 nanometers, and matching the nano silicon dioxide particles with heptadecafluorodecyl trimethoxysilane and other raw materials; the nano silicon dioxide particles are subjected to surface modification for 3-5 hours at 40-60 DEG C by controlling the volume ratio of absolute ethyl alcohol to deionized water to be (3-5): 1 and the mass ratio of the long-chain alkyl silane coupling agent to the nano silicon dioxide particles to be (0.5-1.5): 1. Adding 0.1-0.5% hydrochloric acid or sulfuric acid for catalysis, and stirring at room temperature for 2-4 hours to form a sol-gel system; ultrasonically cleaning the substrate, activating with a sodium hydroxide solution, coating by a spraying, dip-coating or spin-coating method, and drying and curing at 60-80 DEG C for 2-3 hours to obtain a finished product. The water contact angle of the prepared material is not lower than 150 degrees, the rolling angle is not higher than 5 degrees, the performance is stable in the environment with the temperature ranging from-20 DEG C to 80 DEG C and the humidity ranging from 20% to 90%, and the water contact angle is still not lower than 140 degrees after more than 500 times of abrasive paper friction tests.

The invention discloses high-flexibility low-reflection flexible photovoltaic glass and a preparation method thereof, and belongs to the technical field of photovoltaic glass preparation. The preparation method comprises the following steps: carrying out cleaning and plasma activation treatment on a flexible glass substrate in an argon atmosphere at the power of 100W for 5 minutes; spin-coating a perovskite precursor solution and annealing to form an active layer, and depositing a transparent conductive layer and a back electrode; carrying out vacuum lamination packaging by adopting an EVA material; coating an acrylic acid adhesive transition layer; spin-coating ultraviolet cured SiO2 sol to form an inorganic coating; a PVDF / Ag / PVDF sandwich structure is constructed, the coverage rate of the nano-silver is 40-50%, and the PVDF layer contains 0.5% of antioxidant. After the flexible photovoltaic glass is circularly bent for 1000 times under the curvature radius of 5mm, the recovery rate is greater than 95%, the PAR transmittance is greater than 92.5%, the NIR reflectivity is greater than 89.3%, the reflectivity retention rate is greater than 96% after the flexible photovoltaic glass is aged for 100 hours at 85 DEG C / 85% RH, and the flexible photovoltaic glass has excellent flexibility, optical performance and environmental stability.

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

The invention belongs to the technical field of mobile phone periscope processing, and particularly relates to a mobile phone periscope prism processing technique. Comprising the following steps: S1, performing screen printing on a D surface, baking a finished product after screen printing, performing ultrasonic cleaning after baking, and inspecting a semi-finished product after cleaning; s2, plating an HR film on a B / C surface, removing and trimming by laser after plating the B / C surface, and performing ultrasonic cleaning after laser removal; s3, water-soluble ink screen printing is conducted on the face A, the face A is baked after screen printing, a groove and seven faces ABCJGEF are subjected to spin coating after baking, a finished product is baked after spin coating, the water-soluble ink on the face A is removed after baking, and then ultrasonic cleaning and cleaning inspection are conducted; and S4, plating an AR film on the surface A, performing silk-screen printing on the surface A, baking a finished product after silk-screen printing, cleaning the baked finished product, and inspecting the finished product. According to the method, the problem that the HR film is scrapped after the HR film is plated due to the fact that the optical window area is dirty and polluted after silk-screen printing and the cleaning is not thorough is solved, and meanwhile, the problem that the HR film at the non-optical window position is overlaid on the silk-screen printing ink surface after the HR film is plated by a traditional process and the surface quality is caused is avoided.

The invention provides a mixed halogen perovskite photovoltaic device based on mesophase regulation and a preparation method thereof. The device structure sequentially comprises a substrate, a bottom electrode layer, a hole transport layer, a self-assembly molecular layer, a perovskite layer, an interface modification layer, an electron transport layer, a buffer layer and a top electrode layer from bottom to top, when the perovskite layer is prepared, the used perovskite solution is formed by partially replacing DMSO with DMI in the perovskite solution. According to the method, the problem of non-uniform crystallization of halogen is solved through solvent engineering, and in the spin-coating stage, volatilization of DMF and DMSO can stably form a uniform DMI-PbX2 copolymerized intermediate phase. And in the annealing stage, the high-boiling-point DMI is slowly volatilized to promote the synchronous phase change of the DMI-PbX2 adduct. Due to slow crystallization speed and synchronous phase change, a halide phase WBG perovskite thin film with large crystal grains, low defects and uniformity is obtained.

The invention discloses a flexible gas flow velocity sensor based on ionic conductive gel, and a preparation method and application thereof. The flexible gas flow velocity sensor specifically comprises a semiconductor active layer and a pore-forming agent which are blended, performing spin coating and etching on the interdigital electrode substrate to prepare a semiconductor film with a porous structure; blending an ionic gel precursor solution; and spin-coating or drop-casting the precursor solution, and preparing the gel film with the ionic conduction characteristic through photo-crosslinking. The sensor provided by the invention can realize sensing response to different inert gases and different gas flow rates under low power consumption, and realizes detection application to human respiration through the Bluetooth test module. Air flow is introduced to regulate and control ion mobility, and the sensing performance of the device is improved by means of the porous organic semiconductor film. The flexible sensor can be attached to other objects or the surface of the inner wall of an airflow pipeline, the device is simple in structure and easy to miniaturize, and a millimeter-level micro sensor can be achieved. And the method is suitable for batch preparation of low-power-consumption miniaturized devices.

The invention relates to a method for regulating and controlling the performance of PeLEDs by waiting time before spin-coating, which comprises the following steps: step 1, dropwise adding a perovskite precursor solution to a zinc-magnesium-oxygen electron transport layer which is prepared in advance and has acetate on the surface, standing and waiting for 8-15 seconds on the electron transport layer, the perovskite precursor solution and the electron transport layer are subjected to a pre-reaction; 2, carrying out spin-coating film formation on the perovskite precursor solution subjected to the pre-reaction treatment, and then carrying out annealing treatment on the perovskite film; the perovskite thin film is an FAPbBr3 thin film; the perovskite precursor comprises FABr and PbBr2, and the molar ratio of the FABr to the PbBr2 is greater than 2: 1. According to the method, the perovskite thin film with a smooth surface is prepared by using specific waiting time before spin coating, so that local electric injection nonuniformity is inhibited, the efficiency roll-off of the device is reduced, and the brightness of about 590000 cd m <-2 > is finally realized.

The invention discloses a low-temperature curing photoresist applied to a flexible display panel and a preparation method of the low-temperature curing photoresist, and belongs to the technical field of energy conservation and environmental protection. The photoresist is prepared by compounding a reactive organic-inorganic mixed nano filler, a photosensitive resin matrix, a benzocyclobutenyl silicone oligomer (BSA resin) and an additive. The preparation method comprises the following steps: preparation and surface modification of the nanofiller; synthesizing a photosensitive resin matrix; compounding the oligomer with an additive; dispersing the slurry and adding a nano corrugated template; spin coating, ultraviolet pre-curing, low-temperature baking and heat post-curing are carried out. The curing temperature of the photoresist is lower than 120 DEG C, the resolution ratio is superior to 3 microns, and the bending tolerance frequency is gt; the adhesion strength is gt after 20000 times; 15 Kgf / cm < 2 >, and the water vapor permeability is lt; 10 <-6 >, heat resistance gt; the temperature is 150 DEG C, and the dielectric constant is lt; 3.5, VOC (Volatile Organic Compounds) emission lt; the organic light-emitting material has excellent flexibility, thermal stability and environmental protection performance, is suitable for a pixel definition layer of an OLED flexible display panel, and improves the light extraction efficiency and the anti-fatigue performance.

The invention discloses a strontium-doped bismuth titanate-based ferroelectric film and a preparation method thereof, and belongs to the technical field of dielectric energy storage materials. The chemical composition of the film is Ba < 1-x > Sr < x > Bi < 4 > Ti < 4 > O < 15 >, wherein x ranges from 0.025 to 0.1. The preparation method comprises the following steps: mixing ethylene glycol monomethyl ether and ethylene glycol, adding bismuth nitrate, barium acetate, strontium acetate and butyl titanate, fully stirring and filtering to obtain a precursor solution, aging, dripping to the center of a substrate for spin coating, heating a spin-coated sample to obtain a dry film, and annealing to obtain the ferroelectric film. The method is low in technological condition requirement, and the thin film obtains the optimal energy storage density by changing the doping proportion of Sr. According to the ferroelectric film, when x is equal to 0.075, the leakage current density of Ba0. 925Sr0. 075Bi4Ti4O15 (BBST75) is only 1.59 * 10 <-7 > A / cm < 2 >, the breakdown field strength is as high as 3.22 MV / cm, and at the moment, the film has the energy storage density of 28.2 J / cm < 3 > and the energy storage efficiency of 80.36%.

The invention relates to the technical field of solar cells, in particular to a CZTSSe absorption layer film and a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing a CZTS precursor solution of a DMF solution system; s2, preparing a CZTS precursor film by adopting a sol-gel method; and S3, coating the CZTS precursor thin film with a NaF solution with the concentration of 0-0.2 mol / L, and then carrying out drying and selenylation treatment to obtain the CZTSSe absorption layer thin film. According to the invention, the CZTS precursor film prepared by using the green and environment-friendly solvent DMF is used for carrying out a NaF solution spin-coating annealing process, so that the improvement of the battery efficiency is successfully realized. The change of CZTSSe film element redistribution, defect chemical environment and grain boundary potential difference after the Na element is doped is avoided.

The embodiment of the invention provides wafer glue uniformizing equipment, a wafer double-sided glue uniformizing method and a wafer glue uniformizing system. The wafer glue uniformizing equipment comprises a glue uniformizing suction cup, a vacuum adsorption pipeline, an air supply pipeline and a carrying table. The glue uniformizing sucker is provided with a plurality of air holes and is used for bearing a wafer to be uniformized; the vacuum adsorption pipeline is connected with the glue uniformizing suction cup, and is used for performing vacuum adsorption on the second surface of the wafer through the air hole when the first surface of the wafer is uniformized, and releasing the second surface after the first surface is uniformized, so that the wafer can be overturned until the second surface deviates from the glue uniformizing suction cup; the air supply pipeline is connected with the glue uniformizing suction cup and is used for providing airflow for the first surface through the air holes when the second surface is uniformized, so that an air layer is formed between the glue uniformizing suction cup and the first surface, and the air layer can support the wafer to be in a suspended state, so that the first surface and the glue uniformizing suction cup are kept in a non-contact state; the carrying table is used for carrying the glue uniformizing suction cup, and the glue uniformizing suction cup is configured to rotate relative to the carrying table.

The invention discloses a method for preparing a solar cell by inhibiting perovskite iodine migration and modifying a thin film through a piperazine derivative, and belongs to the technical field of perovskite solar cells. According to the method, a piperazine derivative is used between a perovskite layer and an electron transport layer, so that the piperazine derivative has the functions of modifying a perovskite thin film and inhibiting iodine migration. A modified perovskite light absorption layer is obtained by spin-coating a piperazine derivative solution on the surface of perovskite. The piperazine derivative can act with the iodine simple substance generated after the perovskite material is degraded, and decomposes the iodine simple substance to generate iodide ions, so that further degradation of the perovskite film is prevented, contact between the iodine simple substance and a silver electrode is reduced, and the stability of perovskite is improved. Meanwhile, the material can effectively passivate lead site defects on the surface of the perovskite thin film, and non-radiative recombination generated at the defects is reduced. According to the method, perovskite degradation and silver electrode damage caused by iodine elementary substance volatilization can be effectively inhibited, and an efficient and stable perovskite solar cell device is finally obtained.

The invention relates to the technical field of photovoltaic solar cells, and discloses a perovskite thin film, a preparation method and application, the perovskite thin film is prepared from a perovskite precursor solution by adopting a one-step spin-coating method or a two-step deposition method, and the perovskite precursor solution comprises 2, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5- The perovskite material is prepared from 2, 4-oxazolidinedione, a raw material for synthesizing the perovskite material with the ABX3 crystal structure, and a solvent. According to the invention, 2, 4-oxazolidinedione (OD) molecules are simply introduced into a perovskite precursor solution, especially into an inorganic precursor solution (such as a lead iodide precursor solution), and the porous PbI2 can be obtained by utilizing the interaction between electron-donating groups in the OD molecules and lead iodide, so that when the organic ammonium salt is spin-coated in the second step, the porous PbI2 can be obtained. The organic ammonium salt solution can rapidly diffuse and fully react, so that the perovskite thin film with larger and more uniform crystal grains is obtained, and the residual amount of harmful PbI2 is remarkably reduced.

The utility model provides an automatic spin-coating film preparation machine, which comprises a substrate table, a reagent bottle table, a gun head table, a reagent bottle positioning device, a spin coater, a glue baking machine, a liquid adding carrier, a slide rail assembly and a controller, the substrate table, the reagent bottle table and the gun head table are respectively used for placing one or more substrates, reagent bottles and pipette heads, the reagent bottle positioning device, the spin coater, the glue baking machine, the liquid adding carrier and the sliding rail assembly are electrically connected with the controller, and the liquid adding carrier is connected with the sliding rail assembly. The liquid adding carrier is used for carrying the substrate to the spin coater, carrying the reagent bottle to the reagent bottle positioning device, opening a bottle cap, assembling the pipette tip, sucking a reagent in the reagent bottle and dropwise adding the reagent to the substrate, and the spin coater is used for spin-coating the substrate after the reagent is dropwise added. The liquid adding carrier is further used for carrying the substrate subjected to spin coating to the glue baking machine, and the glue baking machine is used for heating the substrate subjected to spin coating so that the reagent can be cured to form a thin film.

The invention belongs to the technical field of optical glass. The invention relates to an electrochromic glass device, in particular to a preparation method of the electrochromic glass device. The preparation method comprises the following specific preparation steps: cleaning the surface of a glass substrate, and depositing an indium tin oxide transparent conductive layer on the surface of the glass substrate by adopting magnetron sputtering; the preparation method comprises the following steps: by taking nano spherical silicon dioxide as a template, dispersing the nano spherical silicon dioxide in an ethanol solution, then adding a sodium tungstate solution, then adjusting the pH value to 2-3, carrying out a stirring reaction, and then cleaning with a sodium hydroxide solution to remove the template so as to obtain a hollow spherical precursor dispersion liquid; coating the hollow spherical precursor dispersion liquid on the surface of the transparent conductive layer in a spin coating mode, drying and annealing; preparing a liquid electrolyte: taking propylene carbonate as a solvent, and taking lithium perchlorate as an electrolyte lithium salt; niO is deposited on the surface of the WO3 electrochromic layer to serve as a counter electrode through magnetron sputtering; epoxy resin is adopted to package the edge, after liquid electrolyte is injected, internal residual bubbles are removed through hot pressing, and the product is obtained.

The invention discloses a film quality optimization method based on perovskite precursor solution deprotonation inhibition, and relates to the field of perovskite solar cells, and the method comprises the steps: preparing a perovskite precursor solution; adding a carboxylic ester-containing compound into the perovskite precursor solution as a deprotonation inhibitor to obtain a mixed solution; and preparing the mixed solution into a thin film through a spin-coating process, and then carrying out annealing treatment to form the perovskite thin film. The compound containing carboxylic ester is adopted as the deprotonation inhibitor, the deprotonation inhibitor can effectively inhibit the deprotonation reaction of the precursor solution, meanwhile, competitive proton exchange caused by excessive carboxyl deprotonation inhibitor can be avoided, the halogen defect in the film can be passivated, and the quality of the perovskite film is remarkably improved. The perovskite solar cell prepared based on the technology shows excellent photoelectric conversion efficiency and stability, and a new technical path is provided for industrialization of perovskite photovoltaic devices.

The invention discloses a glue uniformizing method for reducing chip damage, and belongs to the technical field of chip preparation. The method specifically comprises the following steps: S1, preprocessing a chip; s2, adding a solvent, a surfactant and a curing accelerator into the basic photoresist, and uniformly mixing to obtain a modified photoresist; s3, loading the modified photoresist into a spin coater, and spin-coating and spin-coating the chip until the thickness of the photoresist layer is 6-10 [mu] m; and after spin coating is completed, curing is carried out to obtain a photoresist layer. According to the glue uniformizing method for the glue with the thickness of 6-10 microns, spreading is carried out at a low-speed stage, so that the photoresist can uniformly cover the surface of a chip, and uneven distribution of the photoresist caused by high-speed rotation is avoided; then adjusting to a high rotating speed, further uniformly distributing the photoresist by utilizing strong centrifugal force, and reaching a previously set target thickness; and finally, after the rotating speed is reduced, the condition that the photoresist is excessively thrown out of the chip is reduced, and the leveling treatment of the surface of the photoresist layer is improved.

The invention discloses a vertical plasmon waveguide device structure capable of being coupled by an optical fiber and a preparation method of the vertical plasmon waveguide device structure, and belongs to the technical field of integrated optoelectronics, and the structure is composed of a pair of metal gratings and a vertical metal-medium-metal plasmon waveguide. The structure comprises a silicon substrate layer, a lower metal layer, a dielectric layer and an upper metal layer which are arranged from bottom to top and is divided into a grating area and a waveguide area, the grating area comprises a dielectric grating area and a metal grating layer, and the waveguide structure comprises the lower metal layer, the dielectric layer and the upper metal layer. According to the design of the invention, the limitation of mass production caused by an overlay process of a mode converter between heterogeneous integrated waveguides is avoided, and the preparation robustness of the device is improved. The optical insertion loss caused by the roughness of the side wall of the waveguide is improved in a metal deposition-dielectric spin coating-metal deposition mode, and the dielectric layer can be replaced to realize multiple device functions.