766 results about "Spin coating" patented technology

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

The invention discloses a low-temperature curing photoresist applied to a flexible display panel and a preparation method of the low-temperature curing photoresist, and belongs to the technical field of energy conservation and environmental protection. The photoresist is prepared by compounding a reactive organic-inorganic mixed nano filler, a photosensitive resin matrix, a benzocyclobutenyl silicone oligomer (BSA resin) and an additive. The preparation method comprises the following steps: preparation and surface modification of the nanofiller; synthesizing a photosensitive resin matrix; compounding the oligomer with an additive; dispersing the slurry and adding a nano corrugated template; spin coating, ultraviolet pre-curing, low-temperature baking and heat post-curing are carried out. The curing temperature of the photoresist is lower than 120 DEG C, the resolution ratio is superior to 3 microns, and the bending tolerance frequency is gt; the adhesion strength is gt after 20000 times; 15 Kgf / cm < 2 >, and the water vapor permeability is lt; 10 <-6 >, heat resistance gt; the temperature is 150 DEG C, and the dielectric constant is lt; 3.5, VOC (Volatile Organic Compounds) emission lt; the organic light-emitting material has excellent flexibility, thermal stability and environmental protection performance, is suitable for a pixel definition layer of an OLED flexible display panel, and improves the light extraction efficiency and the anti-fatigue performance.

The invention relates to the technical field of solar cells, in particular to a CZTSSe absorption layer film and a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing a CZTS precursor solution of a DMF solution system; s2, preparing a CZTS precursor film by adopting a sol-gel method; and S3, coating the CZTS precursor thin film with a NaF solution with the concentration of 0-0.2 mol / L, and then carrying out drying and selenylation treatment to obtain the CZTSSe absorption layer thin film. According to the invention, the CZTS precursor film prepared by using the green and environment-friendly solvent DMF is used for carrying out a NaF solution spin-coating annealing process, so that the improvement of the battery efficiency is successfully realized. The change of CZTSSe film element redistribution, defect chemical environment and grain boundary potential difference after the Na element is doped is avoided.

The invention discloses a method for preparing a solar cell by inhibiting perovskite iodine migration and modifying a thin film through a piperazine derivative, and belongs to the technical field of perovskite solar cells. According to the method, a piperazine derivative is used between a perovskite layer and an electron transport layer, so that the piperazine derivative has the functions of modifying a perovskite thin film and inhibiting iodine migration. A modified perovskite light absorption layer is obtained by spin-coating a piperazine derivative solution on the surface of perovskite. The piperazine derivative can act with the iodine simple substance generated after the perovskite material is degraded, and decomposes the iodine simple substance to generate iodide ions, so that further degradation of the perovskite film is prevented, contact between the iodine simple substance and a silver electrode is reduced, and the stability of perovskite is improved. Meanwhile, the material can effectively passivate lead site defects on the surface of the perovskite thin film, and non-radiative recombination generated at the defects is reduced. According to the method, perovskite degradation and silver electrode damage caused by iodine elementary substance volatilization can be effectively inhibited, and an efficient and stable perovskite solar cell device is finally obtained.

The invention relates to the technical field of photovoltaic solar cells, and discloses a perovskite thin film, a preparation method and application, the perovskite thin film is prepared from a perovskite precursor solution by adopting a one-step spin-coating method or a two-step deposition method, and the perovskite precursor solution comprises 2, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5- The perovskite material is prepared from 2, 4-oxazolidinedione, a raw material for synthesizing the perovskite material with the ABX3 crystal structure, and a solvent. According to the invention, 2, 4-oxazolidinedione (OD) molecules are simply introduced into a perovskite precursor solution, especially into an inorganic precursor solution (such as a lead iodide precursor solution), and the porous PbI2 can be obtained by utilizing the interaction between electron-donating groups in the OD molecules and lead iodide, so that when the organic ammonium salt is spin-coated in the second step, the porous PbI2 can be obtained. The organic ammonium salt solution can rapidly diffuse and fully react, so that the perovskite thin film with larger and more uniform crystal grains is obtained, and the residual amount of harmful PbI2 is remarkably reduced.

The invention discloses a film quality optimization method based on perovskite precursor solution deprotonation inhibition, and relates to the field of perovskite solar cells, and the method comprises the steps: preparing a perovskite precursor solution; adding a carboxylic ester-containing compound into the perovskite precursor solution as a deprotonation inhibitor to obtain a mixed solution; and preparing the mixed solution into a thin film through a spin-coating process, and then carrying out annealing treatment to form the perovskite thin film. The compound containing carboxylic ester is adopted as the deprotonation inhibitor, the deprotonation inhibitor can effectively inhibit the deprotonation reaction of the precursor solution, meanwhile, competitive proton exchange caused by excessive carboxyl deprotonation inhibitor can be avoided, the halogen defect in the film can be passivated, and the quality of the perovskite film is remarkably improved. The perovskite solar cell prepared based on the technology shows excellent photoelectric conversion efficiency and stability, and a new technical path is provided for industrialization of perovskite photovoltaic devices.

The invention discloses a glue uniformizing method for reducing chip damage, and belongs to the technical field of chip preparation. The method specifically comprises the following steps: S1, preprocessing a chip; s2, adding a solvent, a surfactant and a curing accelerator into the basic photoresist, and uniformly mixing to obtain a modified photoresist; s3, loading the modified photoresist into a spin coater, and spin-coating and spin-coating the chip until the thickness of the photoresist layer is 6-10 [mu] m; and after spin coating is completed, curing is carried out to obtain a photoresist layer. According to the glue uniformizing method for the glue with the thickness of 6-10 microns, spreading is carried out at a low-speed stage, so that the photoresist can uniformly cover the surface of a chip, and uneven distribution of the photoresist caused by high-speed rotation is avoided; then adjusting to a high rotating speed, further uniformly distributing the photoresist by utilizing strong centrifugal force, and reaching a previously set target thickness; and finally, after the rotating speed is reduced, the condition that the photoresist is excessively thrown out of the chip is reduced, and the leveling treatment of the surface of the photoresist layer is improved.

The invention provides a GMR magnetic sensor array and a preparation method thereof, and relates to the technical field of magnetic sensors. Compared with the prior art, the preparation method provided by the invention has the advantages that the GMR multilayer film is adopted in the aspect of materials, so that the GMR magnetic sensor array still has an excellent magnetoresistance effect under a large strain condition; the structural integrity, uniformity and chemical stability are ensured by optimizing a spin-coating process, an accurate patterning process and a lossless transfer process of the water-soluble sacrificial layer in the process aspect; the flexible packaging layer in the GMR magnetic sensor array isolates the interference of the external environment and reduces the influence of stress on the magnetic layer at the same time; the excellent performance of GMR performance and the stability of sensitivity, resistance and giant magnetoresistance of the GMR magnetic sensor array under the omnidirectional large strain tensile condition are finally achieved through collaborative optimization of the three aspects of material, process and structure. The problems that an existing magnetic sensor array is poor in GMR performance and insufficient in stability under the omni-directional large strain condition are solved.

The invention discloses a spin-coating acceleration self-adaptive control method based on liquid level disturbance feedback. The method comprises the following steps: collecting a liquid level disturbance signal; extracting liquid level parameters and obtaining a disturbance energy spectrum; establishing a disturbance-film thickness correlation function; designing an adaptive control algorithm; and performing closed-loop execution and optimization. According to the method, the liquid level morphology change data is obtained by using a high-speed camera and a laser reflection method, and the disturbance amplitude, frequency and phase characteristics can be extracted in real time, so that the liquid level stability is quantitatively represented. According to the method, a correlation model between liquid level disturbance parameters and film thickness evolution is established. By coupling the disturbance amplitude and hydrodynamic characteristic parameters (such as Reynolds number, Marangoni number, viscosity and volatilization rate), the corresponding relation between the disturbance intensity and the film thickness deviation is constructed, and the film forming trend of different spin coating stages can be dynamically predicted. According to the invention, a self-adaptive acceleration control algorithm based on disturbance feedback is adopted, and closed-loop optimization control of the spin-coating process is realized.

The invention relates to a polyimide composite film for realizing high-dispersion carbon nanotubes through chemical anchoring and a preparation method of the polyimide composite film, which are used for solving the problems that carbon nanotubes in the existing carbon nanotube / polyimide composite material are easy to agglomerate, poor in interfacial compatibility and low in grafting efficiency. The preparation method comprises the following steps: S1, ultrasonically dispersing aminated carbon nanotubes in anhydrous dimethylacetamide to obtain a stable dispersion liquid; s2, slowly dropwise adding pyromellitic dianhydride into the stable dispersion liquid under an ice bath condition, and enabling the pyromellitic dianhydride to react with the aminated carbon nanotubes under the assistance of triethylamine to form anchor points; s3, adding a diamine monomer 4, 4 '-diaminodiphenyl ether, and gradually adding the residual pyromellitic dianhydride to carry out in-situ polymerization; and S4, preparing a wet film by adopting a curtain coating or spin coating method, and carrying out step-by-step thermal imidization at 80-300 DEG C to obtain the covalent composite film. Controllable covalent connection of the carbon nanotubes and pure polyimide chain segments can be achieved on the molecular level, and therefore the composite film with excellent heat conductivity, electromagnetic shielding performance and mechanical performance is obtained.

The invention discloses temperature-sensitive fluorescent coating ink based on quantum dots as well as a preparation method and application of the temperature-sensitive fluorescent coating ink. The ink is prepared from quantum dots, a polymer substrate material and a solvent, a temperature-sensitive fluorescent coating is formed on the surfaces of electronic components including an electronic chip, a micro-fluidic chip, an energy storage battery, a sensor and a micro-electro-mechanical system through a dispensing method, a spin-coating method, a blade coating method or a spraying method, and a uniform fluorescent film is prepared on the surface of the chip; exciting the fluorescent film by using laser; and according to a pre-calibrated temperature-spectrum relation curve, reconstructing a micro-scale two-dimensional or three-dimensional temperature distribution diagram of the chip in a working state. According to the invention, non-contact and high-resolution real-time temperature imaging of a chip working state microcell is realized, and a key technology is provided for temperature anomaly detection, thermal management optimization and failure analysis of a miniature electronic component.

The application discloses an aluminum phosphate hierarchical structure and a preparation method thereof, and relates to the technical field of aluminum phosphate materials, and comprises the following steps: S1, a glass substrate is cleaned to remove surface impurities; S2, aluminum lactate and phosphoric acid are used as raw materials, deionized water is used as a solvent, and citric acid, oxalic acid, ethylene glycol and polyethylene glycol are added as complexing agents to prepare an aluminum phosphate plating solution; S3, the plating solution is placed on the glass substrate by using a spin coating method; S4, self-assembly drying is performed; and S5, high-temperature heat treatment is performed. The application provides an aluminum phosphate hierarchical structure, and enriches the aluminum phosphate microstructure and a control method thereof. The method is used for preparing the aluminum phosphate material with the hierarchical structure through coordination chemistry and a special plating process, and the morphology of the micro-nano structure can be controlled through a formula and a process.

The invention provides a volume 3D printing optical element manufacturing method based on multi-dimensional spin-coating surface modification, which comprises the following steps: preparing a photosensitive resin precursor solution containing a low-concentration photoinitiator, and performing exposure molding through a volume 3D printing technology to obtain a semi-cured initial blank; preparing a spin-coating liquid containing a high-concentration photoinitiator and an optional functional additive, and coating the surface of the primary blank with the spin-coating liquid through a precise spin-coating process; and finally, light curing is performed in a vacuum environment, so that the liquid film is completely crosslinked and chemically bonded with the surface of the initial blank. The high-concentration initiator spin-coating layer is used for overcoming the oxygen inhibition effect, a traditional solvent cleaning process is replaced, and the Ralt is obtained; the high-smoothness optical surface with the thickness of 5 nm is obtained, the original geometric accuracy of printing is kept, meanwhile, spin coating liquid is used as a universal carrier, full-color coloring, gradient color and multi-layer function superposition of the surface of an optical element are achieved, and the application range of volume printing in the optical field is greatly expanded.

The invention relates to the technical field of low-resistance conductive materials, and particularly discloses a base particle vortex mediated near-room-temperature ultralow-resistance material which comprises a main body material and a regulating medium, the main body material is a doped transition metal oxide or a carbon-based composite material; the regulation and control medium is a low-atomic-weight doping agent; the doped transition metal oxide is La-doped SrTiO3 or Nb-doped TiO. Compared with a traditional copper conductor, the material has the advantages that the resistance is obviously reduced, the energy loss in the electron transmission process can be greatly reduced, the energy efficiency of electronic equipment and new energy equipment can be obviously improved, the material can adapt to the environment temperature change of most indoor and outdoor engineering application scenes, and the application prospect is wide. The problem that part of low-resistance materials are poor in temperature stability is solved, the reliability of long-term operation of devices is guaranteed, conventional processes and equipment such as magnetron sputtering, spin coating and pyrolysis, tube furnace doping and mechanical bending are adopted in the whole process, the operation process is clear and easy to understand, and large-scale production can be achieved in common material laboratories or small and medium-sized production workshops.

The invention discloses a preparation method of a metal surface micro-pattern texture, and belongs to the technical field of metal materials and machining thereof. The method comprises the following steps: S1, depositing a metal shading layer on a monocrystalline silicon wafer and patterning, spin-coating a polysiloxane precursor, curing and stripping to prepare a flexible transparent photoetching template; s2, conformally attaching a template to the cleaned bent metal surface, and performing ultraviolet exposure and development to form a cured photoresist mask; and S3, the metal workpiece with the mask serves as an anode, the metal workpiece with the mask is placed in HF-HCl mixed electrolyte for electrochemical etching, the voltage is controlled to be 2.0-5.0 V, the time is 2-8 min, and the micron-sized surface texture of 0.5-2.5 microns is obtained. And the thickness of the template is 0.3-3.0 mm, so that the template can adapt to metal surfaces with different curvature radiuses. According to the method, the photoetching-electrochemical etching process is successfully extended to the curved metal surface for the first time, the pattern fidelity is high, the texture depth is controllable, and the method can be widely applied to key parts, needing mechanical sealing and lubricating, of a carrier vehicle body.

The invention discloses a preparation method of an easy-to-demold concrete test mold with super-hydrophobic and super-smooth inner wall, and belongs to the field of concrete test molds. The method comprises the following steps of: a, spin-coating negative photoresist, and obtaining a substrate with an inverted trapezoidal micron structure on the inner wall in an ultraviolet lithography manner; b, depositing a metal layer through vacuum evaporation; c, removing the metal layer on the upper surface of the inverted trapezoidal micron structure on the inner wall of the substrate; d, obtaining a micro-nano hierarchical structure on the metal layer; e, spin-coating molten wax, and after cooling, filling the micron-sized pores with solid wax; f, depositing aluminum through vacuum evaporation, and performing anodic oxidation to obtain a porous metal aluminum surface; g, solid wax is discharged, lubricating oil is injected, the whole pores are filled with the lubricating oil, and the super-hydrophobic and super-smooth surface is obtained; and h, splicing the base to obtain the easy-to-demould concrete test mould with super-hydrophobic and super-smooth performance. The cohesiveness of the concrete and the inner wall of the test mold is reduced, so that the concrete is easily separated from the inner wall of the concrete test mold.

The invention belongs to the related technical field of two-dimensional materials, and discloses a two-dimensional degenerate semiconductor film material and a preparation method and application thereof, and the preparation method comprises the following steps: S1, uniformly spin-coating a niobium salt compound solution on a substrate; and S2, based on the obtained substrate, preparing the two-dimensional degenerate semiconductor film material by adopting a chemical vapor deposition method, specifically, in a tubular furnace with an argon atmosphere, placing a sulfur source or a selenium source at the reaction upstream, placing a molybdenum foil in a sleeve in the tubular furnace and in the reaction midstream, and placing the substrate at the reaction downstream, so as to obtain the two-dimensional degenerate semiconductor film material. And introducing oxygen midway, and heating to a reaction temperature to generate the two-dimensional degenerate semiconductor film material. According to the method, the uniformly-covered precursor substance is formed on the surface (substrate) of the two-dimensional material through the spin-coating process, a high-temperature vacuum environment and complex equipment are not needed, modification and polarity regulation and control of the material can be completed only by regulating and controlling the concentration of the precursor solution, the spin-coating rotating speed and the spin-coating time, and low-cost batch processing can be achieved.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The present application belongs to the technical field of high polymer materials, and relates to a resin with a thermal crosslinking structure, a preparation method thereof, an optical glue composition, a microlens and a preparation method thereof. The resin is synthesized by mixing a hydroxyl-containing acrylate monomer A, an epoxy acrylate monomer B and a carboxyl-containing acrylate monomer C according to a specific molar ratio, dropping into a reaction solvent, performing a copolymerization reaction at a specific temperature and adding a free radical initiator. The resin gives the photoresist good reflow characteristics, can maintain a stable form at high temperature, and further prepares an optical glue composition with excellent optical performance and durability. The optical glue composition not only has excellent optical performance, but also performs well in terms of thermal stability, chemical resistance and aging resistance. After spin coating, pre-baking, exposure, development and then heating and reflow, a microlens with a good shape can be formed.

The invention provides a photomask manufacturing method based on guided self-assembly. Advanced node high-end photomasks with high graphic quality can be prepared with high production flux. Comprising the following steps of: preparing a guide template, namely sequentially laminating and spin-coating a carbon film and an antireflection layer on a photomask substrate, forming a specified pattern in the antireflection layer, and preparing the guide template by coating a neutral layer or a molecular brush and annealing; a block copolymer guiding self-assembly step: coating a neutral layer or a molecular brush on the guiding template, annealing, coating a block copolymer, annealing, guiding the block copolymer to carry out self-assembly, forming a first block pattern and a second block pattern, and selectively removing the first block pattern; and a pattern transfer step: transferring the second block pattern to the spin-coated carbon film, and further transferring the pattern transferred to the spin-coated carbon film to the photomask substrate by taking the pattern of the spin-coated carbon film as a hard mask layer, thereby forming a specified pattern in the photomask substrate.

A two-dimensional LiInP2Se6 photoelectric detector and a preparation method, the photoelectric detector uses two-dimensional material LiInP2Se6 as channel material, and uses silicon as a substrate, SiO2 as a dielectric layer, and performs photoelectric performance test by applying bias voltage on two side metal electrodes; the preparation method comprises the following steps: (1) transferring LiInP2Se6 nanometer film onto a silicon substrate; (2) uniformly spin coating photoresist on the surface of the silicon substrate to prepare a bottom electrode pattern; (3) positioning exposure is performed on the bottom electrode pattern, and then development is performed to expose the part needing to be evaporated electrode; (4) preparing a metal electrode. The photoelectric detector is prepared by using LiInP2Se6 as the channel material, and the photoelectric detector with high detection rate and wide band response is realized.

The utility model relates to spin-coating glue-uniformizing equipment with heating and temperature control functions, which comprises a main machine and an electrical control system, the main machine comprises a shell, a glue-uniformizing cavity is arranged at the upper part of the shell, a vacuum adsorption carrying disc is rotatably arranged in the glue-uniformizing cavity through a main shaft, an electromagnetic induction heating coil is arranged on the shell below the carrying disc, and the electromagnetic induction heating coil is arranged on the shell below the carrying disc. The object carrying disc is heated; an infrared temperature measuring probe is mounted on the shell above the glue uniformizing cavity; and the electromagnetic induction heating coil and the infrared temperature measurement probe are electrically connected with the electrical control system and are controlled by the electrical control system to operate. The vacuum adsorption device is simple in structure and high in reliability, can perform vacuum adsorption on the substrate to ensure high-speed stable rotation of the substrate, and simultaneously heats the substrate and accurately controls the temperature.

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

The application discloses a kind of multistage nano-reactor array base nano-channel and preparation method thereof;The application first prepares periodic mesoporous organosilicon Au-PMO loaded with gold nanoparticles, then adopts multi-element assembly strategy, constructs nano-reactor array layer on the surface of porous anodic aluminum oxide AAO by spin coating method, and finally obtains Au-PMO / AAO hetero thin film with rich mesoporous structure and adjustable thickness.The gold nanoparticles loaded thereon are uniform in size and uniformly distributed, so that the thin film exhibits peroxidase-like activity.In addition, PMO / AAO thin film with different metal nanoparticles loaded can also be constructed using this method, paving the way for subsequent sensing, gating and catalytic applications.

A liquid polymer is deposited onto the end face of an optical fiber and cured to form a matching layer having an outer surface that faces away from the end face. During the curing process, the optical fiber may be oriented so the end face faces downward to produce a matching layer having a curved outer surface, or oriented so the end face faces upward to produce a matching layer having a flat outer surface. The end face may include a peripheral area formed from an easy-to-clean coating that confines the liquid polymer to the core and cladding areas of the end face. The easy-to-clean coating also prevents spillover of the liquid polymer onto the cladding of the optical fiber. Matching layer thickness may be tuned using a spin coating process.

The invention relates to the technical field of semiconductor material preparation, and discloses a preparation and passivation process of a carrier decay time standard sample wafer, which comprises the following steps: preparing a passivation precursor solution; carrying out pretreatment on the semiconductor substrate; applying the passivation precursor solution to the surface of the semiconductor substrate in a spin-coating deposition mode to form a wet film; performing low-temperature gelation treatment on the wet film to form a solid gel film; two-stage annealing treatment is carried out on the semiconductor substrate with the solid gel film, the first-stage annealing is carried out in a high-purity nitrogen atmosphere carrying heavy water vapor, and the second-stage annealing is carried out in a high-purity dry nitrogen atmosphere; and cooling the semiconductor substrate subjected to the two-stage annealing treatment. The passivation layer with high stability, long service life and low cost is prepared through heavy water vapor passivation and two-stage annealing processes.

The invention belongs to the technical field of energy materials, and discloses a preparation method of a zinc-based porous organic polymer coating and application of the zinc-based porous organic polymer coating to protection of a zinc negative electrode. Reaction raw materials of the zinc-based porous organic polymer provided by the invention are cheap soluble zinc salt and pyromellitic acid, and the zinc-based porous organic polymer is obtained through a one-step solvothermal reaction. Polyvinylidene fluoride (PVDF) is adopted as a binder, and Zn-POPs is loaded on the surface of the zinc negative electrode in the modes of spin coating, blade coating, spray coating and the like. According to the Zn-POPs protective coating provided by the invention, the concentration distribution of zinc ions on an interface can be dynamically regulated and controlled by an unsaturated coordinate bond, and a dendrite-free zinc negative electrode is realized. Meanwhile, the coating can isolate direct contact between the electrolyte and the negative electrode, so that corrosion of the zinc negative electrode and generation of byproducts are reduced; when the coating is applied to a symmetric battery and a total battery, the battery can show low polarization voltage and stable cycle performance, the advantages of the coating are further highlighted, and subsequent large-scale industrial production can be expected.

A method of forming a semiconductor package is provided. The method includes forming a micro lens recessed from the top surface of a substrate. A concave area is formed between the surface of the micro lens and the top surface of the substrate. The method includes depositing a first dielectric material that fills a portion of the concave area using a spin coating process. The method includes depositing a second dielectric material that fills the remainder of the concave area and covers the top surface of the substrate using a chemical vapor deposition process. The method includes planarizing the second dielectric material. The method includes forming a bonding layer on the planarized second dielectric material and over the top surface of the substrate. The method includes bonding a semiconductor wafer to the substrate via the bonding layer.

The invention belongs to the technical field of optical detectors. The invention provides a preparation method of a broadband optical detector for dynamic encryption communication. The preparation method comprises the following steps: S1, providing a SiO2 / Si substrate; s2, sequentially transferring a first transition metal sulfide and a second transition metal sulfide on the SiO2 / Si substrate in a directional transfer manner to form a transition metal sulfide layer; s3, spin-coating a PbSe QDs solution or a PbS QDs solution on the transition metal sulfide layer to form a quantum dot film with uniform quantum dots; s4, an EDT acetonitrile solution is dropwise added to the surface of the quantum dot thin film, standing reaction is conducted for preset time, and then spin coating is conducted to remove redundant ligands and reaction by-products; and S5, placing the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector on a heating table for annealing treatment to complete the preparation of the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector. Wherein the energy barrier at the quantum dot / transition metal sulfide heterostructure can be independently and cooperatively regulated and controlled through the drain-source voltage and the gate-source voltage, and the confidentiality of the photoelectric detector can be improved.