1546 results about "Spin coating" patented technology

The invention discloses a method for improving the micro LED mesa morphology by using multilayer masks and segmented etching, and belongs to the technical field of semiconductor processing technologies. The method comprises the following steps: firstly, depositing a SiO2 mask layer on the surface of an epitaxial layer, and then obtaining a photoresist through hole structure through spin coating, exposure and development; then, a chromium metal film layer is deposited and then lifted away from the photoresist, and a patterned chromium metal film layer is prepared; taking the patterned chromium metal film layer as a mask, and etching to prepare a patterned SiO2 mask layer; etching the patterned chromium metal film layer and the upper region of the epitaxial layer by using an etching gas with a high Cl2 / BCl3 flow ratio, and etching the patterned SiO2 mask layer and the lower region of the epitaxial layer by using an etching gas with a low Cl2 / BCl3 flow ratio; by adjusting the time of the two etching processes and the flow parameters of the etching gas, the time point when the chromium metal film layer is consumed can be controlled, and the effects of controlling the up-down diameter of the table top and controlling the etching angle are achieved.

The invention relates to a resistance-type porous flexible pressure sensor and a manufacturing method thereof, the whole sensor is of a sandwich structure, the bottom layer is a structural substrate, the surface layer is a contact layer, the middle layer is composed of a plurality of discrete sensing units, and each discrete sensing unit is composed of a porous structure and conductive fibers. The conductive fiber is embedded in the porous structure and is provided with a plurality of section crack structures, separated cutting grooves are formed between the adjacent discrete sensing units, and separation grooves corresponding to the cutting grooves are formed in the contact layer. The manufacturing method comprises the following steps: preparing the supporting structure by using a molding spin-coating process, performing coupling integration of the conductive fibers by using a 3D printing method, and finally completing integrated controllable and reliable manufacturing of the pressure sensor by using a high-temperature foaming stretching and laser cutting process. According to the resistive porous flexible pressure sensor, on one hand, the detection sensitivity and the detection range of the pressure sensor on pressure can be remarkably improved, and on the other hand, sensing decoupling of a contact interface can be achieved so as to be used for measuring distributed pressure.

The invention belongs to the technical field of spin-coating machines, and discloses a spin-coating chamber structure capable of stabilizing a chamber flow field and improving chamber cleanliness. The synchronous cover module, the air pressure adjusting module and the spin-coating turntable module which are arranged from top to bottom are of a concentric structure; a flow channel allowing spin-coating liquid to flow out is reserved between the spin-coating rotary table module and the air pressure adjusting module, and the spin-coating rotary table module and the synchronous cover module are synchronous in rotating speed during spin-coating. Before spin-coating, an air pump is connected to an air channel of the air pressure adjusting module, impurities in the spin-coating cavity are taken away from the surface of a substrate through airflow, and the cleanliness of the cavity is improved. And in the spin-coating process, supersaturated gas is introduced from the air inlet of the synchronous cover module, passes through the cylindrical cavity and is introduced into the spin-coating cavity from the air outlet, so that the atmosphere environment in the spin-coating cavity is improved, the evaporation uniformity is improved, and the film thickness uniformity is improved. In the spin-coating process, the synchronous cover module and the spin-coating module rotate synchronously, and the trapezoidal spoiler of the synchronous cover module can improve the air flow speed in the spin-coating chamber, so that the air flow speed in the spin-coating chamber is more uniform, and the film thickness uniformity is ensured.

The invention relates to the field of optical lens coatings, and particularly discloses a preparation method of an antifouling and antibacterial spectacle lens coating. The preparation method of the antifouling and antibacterial spectacle lens coating comprises the following steps: depositing a silicon dioxide substrate on the surface of a lens through plasma enhanced chemical vapor deposition treatment; the preparation method comprises the following steps: dispersing nano-graphene and nano-silver particles in an ethanol solvent, adding a silane coupling agent to form a homogeneous suspension, loading the suspension on the surface of a silicon dioxide substrate through a spin-coating method, and carrying out heat treatment curing to form an antibacterial layer, with the loading amount of nano-silver being less than or equal to 0.5 wt%; and etching the surface of the antibacterial layer by adopting a reactive ion etching method, and then grafting perfluorooctyltriethoxysilane on the etched surface at 80-100 DEG C by adopting a vapor deposition method to form the hydrophobic layer. The preparation method of the antifouling and antibacterial spectacle lens coating has the advantages of being antibacterial, antifouling and high in durability.

The invention relates to an orderly self-assembled monomolecular layer, a semitransparent solar cell and a preparation method of the semitransparent solar cell. The preparation method comprises the following steps: uniformly mixing carbazole phosphoric acid MeO-2PACz with an isopropanol solvent to obtain a mixed solution, spin-coating the mixed solution on an ITO transparent conductive substrate, and annealing to obtain a uniform and compact self-assembled monomolecular layer. And sequentially preparing a perovskite light absorption layer, a C60 electron transport layer, a SnO2 buffer layer and an ITO transparent electrode layer on the surface of the self-assembled monomolecular layer by adopting spin coating, vacuum evaporation, atomic deposition, magnetron sputtering and the like, and finally obtaining the semitransparent perovskite solar cell. The uniform and compact high-quality self-assembled monomolecular layer can be prepared by using the isopropanol and MeO-2PACz spin coating liquid formula, so that the nucleation activation energy of perovskite can be reduced, the perovskite buried layer is more compact, the charge recombination reaction of the buried interface is reduced, and the photoelectric conversion efficiency is improved. And the efficiency and the stability of the semitransparent perovskite solar cell device are obviously improved.

The invention provides a perovskite thin film and a preparation method thereof, and belongs to the technical field of perovskite thin films, and the preparation method comprises the following steps: S1, preparing modified octa (aminophenyl trioxosilane); s2, preparing a precursor solution; and S3, spin-coating the pretreated substrate with the precursor solution, dropwise adding ethyl acetate at the same time, performing illumination treatment under ultraviolet light, and then immediately performing micro-vibration and curing annealing on the substrate to obtain the perovskite thin film. According to the perovskite thin film obtained by the invention, the purposes of synchronously increasing the open-circuit voltage and the filling factor of a solar cell, improving the photoelectric conversion efficiency and enhancing the long-term stability can be achieved.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention discloses a photoresist micro-lens array preparation method and system, and relates to the field of micro-nano optical device manufacturing. The preparation method of the photoresist micro-lens array comprises the following steps: carrying out chemical mechanical polishing treatment on a silicon wafer, spin-coating photoresist on a substrate to form a cylindrical array, and eliminating solvent gradient through pre-drying; forming a fluorocarbon nano film on the surface of the photoresist through plasma deposition so as to reduce the surface energy of the photoresist; realizing hot reflux of the photoresist based on gradient annealing, wherein the gradient annealing comprises a preheating section, a main reflux section and a stable section; on the basis of the preheating section, glass transition stress is avoided, fluorine-containing gas and inert gas are synchronously introduced into the main backflow section to act on a plasma sheath layer, so that the flowing direction of photoresist is regulated and controlled, and the edge coffee ring effect is inhibited; the stable section synchronously performs plasma assistance to lock the shape; and the precision and the consistency of the micro-lens array are improved through segmented temperature regulation and control and a plasma auxiliary technology.

The invention discloses a preparation method and application of a three-dimensional star-shaped polyhedral polymer bulk phase modified efficient and stable perovskite solar cell, and relates to the technical field of solar photovoltaics. The method comprises the following steps: coating a perovskite precursor solution on a substrate for spin-coating operation, dropwise adding an anti-solvent containing a three-dimensional star-shaped polyhedral polymer in the spin-coating process, then continuing spin-coating for 10-20 seconds, and annealing at 100-120 DEG C for 15-30 minutes to obtain the three-dimensional star-shaped polyhedral polymer bulk phase modified efficient and stable perovskite thin film. According to the invention, the perovskite solar cell is prepared based on the bulk phase modification of the three-dimensional star-shaped polyhedral polymer, and the efficiency and stability of the perovskite cell are improved by regulating the modification concentration of the polymer.

The invention provides a wafer thinning equipment control method and device, electronic equipment and a storage medium, and relates to the technical field of wafer thinning. The method comprises the following steps: monitoring spreading and thinning behaviors of a spin-coating liquid film in real time and generating a residual layer distribution diagram; according to an area indicated by the residual layer distribution map, obtaining local thickness information by analyzing a fluorescence signal received from the area; after a laser beam is used for scanning the surface of the wafer, micro-vibration signals are recognized and extracted by analyzing reflected light signals; dividing the surface of the wafer into a plurality of grid areas; and the risk of generating cracks in each grid area is evaluated, and a wafer surface risk thermodynamic diagram used for controlling the grinding head and the grinding fluid is generated. The method aims at solving a series of problems caused by a microcosmic residual layer on the surface of the wafer or surface energy difference in the wafer thinning process, early and accurate sensing of microcosmic abnormity on the surface of the wafer is achieved, and a control system is guided to conduct regional and self-adaptive grinding parameter adjustment.

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention discloses a graphene heat dissipation film and a preparation method thereof, and relates to the technical field of heat dissipation materials.The method comprises the steps that graphene powder and doped particles are mixed according to the mass fraction of 5-20%, deionized water is added to serve as a dispersion medium, 0.5-5% of a stripping auxiliary agent is added, treatment is conducted through high-speed shear dispersion and ultrasonic dispersion, and the graphene heat dissipation film is obtained. Uniform and stable modified graphene slurry is formed; coating the modified graphene slurry on a base material layer by layer according to a sequence from low thermal conductivity to high thermal conductivity, controlling the coating thickness by adopting a scraper or a spin coating process, and performing pre-drying treatment after coating each layer; the coated film is dried at the temperature of 80-200 DEG C, and the interlayer bonding strength is enhanced through chemical curing or thermocuring. Through innovative design of a modified graphene material and optimization of a multi-layer gradient structure, comprehensive improvement of thermal conductivity, mechanical properties and stability of the graphene heat dissipation film is realized.

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

The invention provides a PACl modified perovskite light absorption layer, a PACl modified perovskite solar cell and a method, the PACl modified perovskite light absorption layer comprises a perovskite precursor solution composed of a (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs0 < 0.05 > Pb < I < 0.95 > Br < 0.05 >) < 3 > perovskite material and a PACl passivation material, and the PACl modified perovskite light absorption layer is obtained through spin coating and annealing of the perovskite precursor solution. According to the invention, n-propyl ammonium chloride PACl is added into the perovskite precursor solution to modify perovskite, so that the defects in the perovskite material are significantly reduced, and the efficiency of the perovskite solar cell is improved.

The invention provides a seed layer for preparing a preferred orientation crystal film and the crystal film, lanthanide series metal salt is selected as an initial raw material of the seed layer, the initial raw material is adopted to prepare a solution, the prepared solution is filtered to obtain a seed layer solution, the seed layer solution is subjected to spin coating or ink jet printing on a substrate, and heat treatment is performed to obtain the seed layer. According to the seed layer for preparing the preferred orientation crystal film and the preferred orientation crystal film, the high-quality single crystal film is prepared under simple and convenient conditions, and the seed layer and the preferred orientation crystal film have wide application prospects in the fields of information storage, intelligent sensing, biomedical treatment, energy and the like.

The invention relates to a diffusion-resistant layer enhanced high-temperature oxidation-resistant composite ceramic coating for a niobium surface and a preparation process thereof. The coating system is composed of a diffusion layer, an anti-diffusion layer and a composite ceramic coating in sequence. In the preparation process, the Al2O3 diffusion-resistant layer is accurately constructed by adopting a slurry spin-coating method, and the method can realize accurate regulation and control of the thickness of the diffusion-resistant layer, so that uniform distribution of the Al2O3 layer is ensured. The introduction of the diffusion-resistant layer significantly improves the high-temperature stability and oxidation resistance of the coating, effectively delays the oxidation process of the material under an extreme high-temperature condition, and greatly prolongs the service life of the material.

The invention discloses a cellulose derivative doped perovskite active layer, a preparation method thereof and a perovskite solar cell, and relates to the technical field of solar cells, and the preparation method comprises the steps: dissolving PbI2, PbBr2, CsI, MABr, FAI and MACl in a solvent to obtain a mixed solution; adding HPMCP into the mixed solution to obtain a perovskite precursor solution; and in a protective gas atmosphere, spin-coating the perovskite precursor solution on a substrate, dropwise adding chlorobenzene in the spin-coating process, and heating the substrate after spin-coating to obtain the perovskite active layer. The method has the beneficial effects that the leakage of lead in perovskite is effectively inhibited by utilizing the physical wrapping effect of HPMCP and the strong coordinate bond effect and hydrogen bond effect of perovskite, the quality of a perovskite active layer thin film can be improved, grain boundary defects are effectively passivated, ion migration is inhibited, and good optical performance is achieved; the photoelectric conversion efficiency and the environmental stability of the halogen hybrid perovskite solar cell device are effectively improved.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention belongs to the technical field of construction of super-hydrophobic surfaces, and particularly relates to a preparation method of a super-hydrophobic coating with a multistage micro-nano structure. Comprising the following steps: pretreating a substrate; slowly adding the F-SiO2 nanoparticle dispersion liquid into the fluorine-containing glue solution under the synergistic treatment of ultrasonic and magnetic stirring to obtain an F-SiO2 / fluorine-containing glue composite solution; the method comprises the following steps: determining the actual glue coating amount based on the theoretical glue demand amount of a PDMS template, and coating the F-SiO2 / fluorine-containing glue composite solution on the surface of a substrate through spin coating to form a wet film; coining the wet film by using a PDMS template, and stripping the template after ultraviolet curing to obtain the super-hydrophobic coating with the multistage micro-nano structure. Based on an imprint method with insufficient glue amount, synchronous construction of a micro / nano dual-scale structure is achieved by accurately controlling the ratio of the volume of the coating liquid to the volume of the pore of the template and combining the curing shrinkage characteristic of the polymer, and the method has application potential in the fields of anti-icing, microfluid devices, marine antifouling and the like.

The invention discloses a method for preparing nitrogen-containing graphene by taking chitosan as a raw material, and belongs to the technical field of nitrogen-containing graphene. The preparation method comprises the following steps: uniformly coating a mixed solution of chitosan and acetic acid on the surface of a quartz base material by adopting a spin coating technology, then slowly heating and annealing the base material coated with the mixed solution in a nitrogen protection environment, after the temperature is naturally reduced to room temperature, lightly scraping off a chitosan film from the base material, placing the base material in a nitrogen atmosphere again, and carrying out two-step carbonization to obtain the chitosan / acetic acid composite material. After carbonization is completed, naturally cooling to room temperature to obtain a pre-carbonized product; and uniformly mixing the obtained pre-carbonized product with a regulating agglomeration agent according to a mass ratio of 1: 1. Then, two-step activation treatment is carried out, after activation is completed, after the system is cooled to the room temperature, a product is subjected to aftertreatment and drying, and a nitrogen-containing graphene product is obtained. Chitosan is spin-coated to prepare a film before high-temperature carbonization, and then an annealing reaction is carried out for a period of time. The conformation of the polymer fiber treated by the step is loose, and formation of a graphene layer is facilitated.

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The invention provides a memristor based on a quasi 2D / 3D heterojunction perovskite and a preparation method and application of the memristor. The invention belongs to the technical field of memristors. In the memristor, a three-dimensional (3D) (FAPbI3) 0.95 (MAPbBr3) 0.05 perovskite thin film and a CF3-PEAI quasi-two-dimensional perovskite thin film are prepared by adopting a spin coating method and are used as functional layers of the memristor. The device has a stable I-V cycle characteristic, not only can realize a stable conductivity adjustable characteristic under positive and negative voltages, but also can accurately simulate a recognition task of a handwritten data set by utilizing the device and linear updating for enhancing and inhibiting a conductivity weight, and the accuracy rate can reach 94%. The invention aims to provide the perovskite memristor with a novel structure so as to meet the requirements of efficient neural synaptic bionic and brain-like computing system construction.

The invention discloses a preparation method of an ultra-infiltration nano coating, and relates to the field of ultra-infiltration nano coatings, and the preparation method comprises the following steps: S1, base material pretreatment, S2, nano material dispersion liquid preparation, S3, coating: adopting an impregnation method, a spraying method or a spin-coating method to attach the nano material dispersion liquid prepared in the step S2 to the surface of the base material pretreated in the step S1, and S4, low-temperature curing to obtain the ultra-infiltration nano coating. And S5, surface modification: carrying out hydrophobic modification or hydrophilic modification on the base material subjected to low-temperature curing in the step S4 according to the type of the base material. The effect of enhancing the adhesive force of the base material and the coating is achieved through the means of pretreating the base material, it is ensured that nano particles of the dispersion liquid are always uniformly dispersed through preparation of the nano material dispersion liquid and the coating, coating is conducted through proper methods such as dipping, spraying and spin coating, and then low-temperature curing is conducted; the effect of constructing a stable porous nano-structure coating with excellent performance is achieved, and meanwhile, different requirements are met through multiple coating modes.

The present invention generally relates to a process for fabricating a reduced graphene oxide (rGO)-based antifouling marine coating is disclosed. The process begins with preparing a dispersed graphene oxide solution, followed by chemical reduction using hydrazine hydrate at 90-95° C. for 3 hours to form a dispersed rGO solution. This solution is then washed, filtered, and sonicated for 6 hours to ensure stability. A polymer solution is prepared by dissolving 40-50 wt % epoxy resin in acetone at 50° C. The antifouling composite is then formed by combining the rGO solution, 10-15 wt % zinc oxide nanoparticles, and 1-5 wt % carbon nanotubes with the polymer solution, followed by 6 hours of sonication at room temperature. Finally, the resulting composite material is applied to a substrate as a coating using spraying, brushing, dipping, or spin coating. This coating offers a promising solution for preventing biofouling on marine structures.

The invention belongs to the technical field of memristors, and particularly relates to a preparation method of a high-stability heterojunction material memristor, and the method comprises the following steps: S1, making a sample, and employing a conductive material as a substrate and a bottom electrode; s2, preparing a Cs3Bi2Br9 solution, and preparing the Cs3Bi2Br9 solution by mixing CsBr powder, BiBr3 powder, DMSO (Dimethylsulfoxide) and DMF (Dimethyl Formamide); s3, mixing and stirring the Cs3Bi2Br9 solution in the S2, adding HBr after 1 hour, and then continuously stirring and mixing; s4, performing plasma treatment on the sample in the S1, and spin-coating the sample with a Cs3Bi2Br9 solution; s5, sputtering a ZnO thin film on the sample subjected to spin coating in the step S4 for end sealing; s6, plating a top electrode on the sample subjected to ZnO film end sealing; by using the ZnO thin film to seal the end, the challenge brought by the traditional solution method for constructing the active layer of the perovskite memristor at present can be overcome, the preparation repetition rate of the memristor is effectively improved, the stability of the perovskite and the reliability of the device are effectively improved, and the problem that the stability of the existing preparation method of the perovskite thin film memristor is relatively poor is solved.

The invention discloses a solid-state electrolyte and a solid-state lithium metal battery. A preparation method of the solid-state electrolyte comprises the following steps: preparing a Li1. 3Al0. 3Ti1. 7( PO4) (LATP) solid-state electrolyte by adopting a solid-phase sintering method; the preparation method comprises the following steps: dissolving InCl3 and polyacrylic acid (PAA) in isopropanol to form a colorless precursor solution; dripping the solution on the surface of the LATP solid electrolyte and coating by using a spin coater; and the coated and dried LATP is put into a tubular furnace to be sintered, and the In2O3 coated LATP is obtained. Through in-situ electrochemical reaction of indium oxide and lithium metal, an interface layer composed of a Li2O phase and a LixIn alloy is constructed. Wherein the Li2O phase has relatively low lithium ion migration energy barrier and electronic insulation capability; the LixIn alloy can improve the ion diffusion coefficient of the lithium side, and has very high affinity to lithium metal and LATP. According to the Li2O / LixIn interface layer prepared by the preparation method disclosed by the invention, tight contact between lithium metal and LATP is maintained, side reaction is avoided, interface ion transmission kinetics is improved, and uniform dendrite-free lithium deposition is realized.

The invention provides a preparation method of a nano super-hydrophobic material. The preparation method comprises the following steps: firstly, selecting nano silicon dioxide particles with the particle size of 20-50 nanometers, and matching the nano silicon dioxide particles with heptadecafluorodecyl trimethoxysilane and other raw materials; the nano silicon dioxide particles are subjected to surface modification for 3-5 hours at 40-60 DEG C by controlling the volume ratio of absolute ethyl alcohol to deionized water to be (3-5): 1 and the mass ratio of the long-chain alkyl silane coupling agent to the nano silicon dioxide particles to be (0.5-1.5): 1. Adding 0.1-0.5% hydrochloric acid or sulfuric acid for catalysis, and stirring at room temperature for 2-4 hours to form a sol-gel system; ultrasonically cleaning the substrate, activating with a sodium hydroxide solution, coating by a spraying, dip-coating or spin-coating method, and drying and curing at 60-80 DEG C for 2-3 hours to obtain a finished product. The water contact angle of the prepared material is not lower than 150 degrees, the rolling angle is not higher than 5 degrees, the performance is stable in the environment with the temperature ranging from-20 DEG C to 80 DEG C and the humidity ranging from 20% to 90%, and the water contact angle is still not lower than 140 degrees after more than 500 times of abrasive paper friction tests.

The invention discloses a multi-channel optical power divider based on an MMI structure and a preparation method thereof, and belongs to the technical field of planar optical waveguide devices and preparation thereof. The polymer optical waveguide is composed of a silicon wafer substrate, a polymer lower cladding, a polymer optical waveguide core layer of a strip-shaped structure and a polymer upper cladding in sequence from bottom to top, and the polymer optical waveguide core layer of the strip-shaped structure is based on an MMI structure and is wrapped in the polymer upper cladding. According to the waveguide type power divider, the characteristics of large process tolerance and small size of an MMI optical waveguide structure are combined, and the advantage of various types of organic polymer materials is also utilized, so that the purpose of performing same power distribution on input of a plurality of different ports is realized; besides, the process for preparing the device by adopting the polymer material is relatively simple, only conventional processes such as spin coating and photoetching are needed, the process with relatively high difficulty is not needed, the production cost is low, the efficiency is high, large-scale batch production can be realized, and the power divider can be applied to practice.

The invention provides a method and equipment for detecting ion migration of a perovskite solar cell, and relates to the technical field of perovskite solar cells, and the method comprises the steps: obtaining a fluorine-doped tin oxide coating glass substrate, and carrying out the spin coating of a SnO2 colloidal solution on the glass substrate, so as to obtain an electron transport layer; preparing perovskite solutions of different components according to a preset precursor solution formula, spin-coating the electron transport layer with the perovskite solutions, and performing annealing treatment to obtain perovskite thin films of different components; coating a Spiro-OMeTAD solution on the perovskite thin film so as to obtain a hole transport layer; depositing a gold electrode on the hole transport layer to obtain a solar cell device; different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the relation between the interface ion cumulant and the load is evaluated. The problems of unstable performance, current and voltage lagging and the like caused by ion migration of the existing titanium ore solar cell under the actual working condition are solved.

The invention discloses high-flexibility low-reflection flexible photovoltaic glass and a preparation method thereof, and belongs to the technical field of photovoltaic glass preparation. The preparation method comprises the following steps: carrying out cleaning and plasma activation treatment on a flexible glass substrate in an argon atmosphere at the power of 100W for 5 minutes; spin-coating a perovskite precursor solution and annealing to form an active layer, and depositing a transparent conductive layer and a back electrode; carrying out vacuum lamination packaging by adopting an EVA material; coating an acrylic acid adhesive transition layer; spin-coating ultraviolet cured SiO2 sol to form an inorganic coating; a PVDF / Ag / PVDF sandwich structure is constructed, the coverage rate of the nano-silver is 40-50%, and the PVDF layer contains 0.5% of antioxidant. After the flexible photovoltaic glass is circularly bent for 1000 times under the curvature radius of 5mm, the recovery rate is greater than 95%, the PAR transmittance is greater than 92.5%, the NIR reflectivity is greater than 89.3%, the reflectivity retention rate is greater than 96% after the flexible photovoltaic glass is aged for 100 hours at 85 DEG C / 85% RH, and the flexible photovoltaic glass has excellent flexibility, optical performance and environmental stability.