5results about How to "Excellent etch resistance" patented technology

The invention relates to opaque quartz glass with high absorption in the near-infrared range and a production method thereof. The invention also relates to the use of the opaque quartz glass according to the invention or of the opaque quartz glass obtained from the method according to the invention in a processing chamber in which semiconductor wafers are processed.

Provided are a resist underlayer film forming method and a pattern forming method with which it is possible to form a resist underlayer film exhibiting excellent dry etching resistance. The resist underlayer film forming method is a method for forming a resist underlayer film on a substrate, and comprises the following steps: (i) applying a resist underlayer film forming composition containing (A) a polymer and an organic solvent on the substrate to obtain a coating film, and subjecting the coating film to a temperature of 100 DEG C to 800 DEG C for 10 seconds to 7,000 seconds; a step for forming an underlayer film precursor film by curing the underlayer film by heat treatment for 200 seconds; and (ii) curing the underlayer film precursor film by plasma irradiation to form a resist underlayer film. An aromatic ring-containing resin that does not contain a hydroxyl group or an organic group represented by general formula (1) in a repeating unit constituting the polymer is used as the polymer (A). (In general formula (1), p is 0 or 1, and * is a bonding part. > # imgabs0 #

This invention provides a composition for forming a photoresist underlayer using a diarylmethane derivative, which can form a film exhibiting high etch resistance, good dry etch rate ratio and optical constants, good coverage even for so-called uneven substrates, small thickness variation after embedding, and flatness. Furthermore, it provides a method for manufacturing a polymer suitable for the photoresist underlayer forming composition, a photoresist underlayer using the photoresist underlayer forming composition, and a method for manufacturing a semiconductor device. The photoresist underlayer forming composition comprises an aromatic compound (A) having 6 to 120 carbon atoms, a reaction product of a compound represented by the following formula (1), and a solvent. In formula (1), Z represents -(C=O)- or -C(-OH)-, Ar1 and Ar2 each independently represent a substituted phenyl, naphthyl, anthraceneyl, or pyrene group, and ring Y represents a substituted aliphatic ring, a substituted aromatic ring, or a fused ring of substituted aliphatic and aromatic rings.

The present invention provides a method for improving a photoresist process window for etching back. The method comprises providing a substrate, forming an active area on the surface of the substrate, forming a plurality of first structures, a plurality of second structures and a thin film layer in the active area, wherein the first structure is higher than the second structure, and the first structure has an upper structure and a lower structure; forming a carbon filling material layer with a first thickness and covering the plurality of first structures, the plurality of second structures and the thin film layer on the substrate; performing a first etching to remove the carbon filling material layer, so that the remaining thickness on the top surface of the first structure is a second thickness; performing a second etching to etch the upper structure and expose the lower structure, wherein the carbon filling material layer with the second thickness prevents the thin film layer from being etched. The present invention can simultaneously realize nickel silicide protection and defect-free, and form a process window.

The application relates to a resistance conductive material and a preparation method and application thereof, wherein the resistance conductive material comprises, from bottom to top, a copper foil layer, a transition layer and a resistance layer; the resistance layer comprises a dispersion reinforcing phase and a homogeneous phase; the dispersion reinforcing phase is subjected to surface pretreatment before being added into an electroplating solution. Through the introduction of the transition layer and the dispersion reinforcing phase, the diffusion of copper into the resistance layer is inhibited, the high resistivity of the resistance layer is maintained, and the application prospect is good.