222 results about "High resistivity" patented technology

The invention discloses an AlGaInP red light LED chip structure with a polarization-induced tunnel junction and a preparation method thereof. The chip structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type etching barrier layer, an n-type GaAs ohmic contact layer, an n-type limiting layer, a non-doped InGaP / quantum well structure, a p-type spacer layer, a p-type AlGaInP polarization-induced doping layer, an insertion layer and an n-type ohmic contact layer from bottom to top. Wherein the p-type AlGaInP polarization induction doping layer introduces a piezoelectric polarization electric field through an Al component gradual change design, high-density two-dimensional hole gas is formed through induction, and the high-Al component insertion layer and the n-type ohmic contact layer form a tunnel junction; according to the invention, the problems of low p-type doping efficiency and high resistivity of the AlGaInP material with high Al component are fundamentally solved, the epitaxial structure and the chip process are simplified, the series resistance of the chip is reduced, the luminous efficiency is improved, the yield is improved, and the method has remarkable technical and commercial values.

The invention provides a hot-pressing preparation method and application of a magnetic powder core. The hot-pressing preparation method comprises the following steps: carrying out insulation coating on glassy state soft magnetic amorphous alloy powder to obtain an intermediate powder material with a coating structure; the coating structure comprises a first coating layer or comprises a first coating layer and a second coating layer which are arranged in sequence; the first coating layer comprises nano inorganic particles and phosphate, and the second coating layer comprises an organic coating material; carrying out hot pressing treatment on the material containing the intermediate powder material to obtain a magnetic powder core; the adopted glassy soft magnetic amorphous alloy powder has a supercooled liquid phase region, the lowest temperature and the highest temperature of the supercooled liquid phase region are Tg and Tx respectively, the temperature of the hot pressing treatment is (Tg-20 DEG C)-(Tx-20 DEG C), the pressure of the hot pressing treatment is 100-500 MPa, and the holding time is 2 s-120 min. According to the magnetic powder core provided by the invention, the coating layer can be kept complete in the hot pressing process, and the magnetic powder core has relatively high density, high resistivity, high magnetic conductivity and low loss.

This invention proposes a metal soft magnetic powder core with excellent low-frequency magnetic properties and its preparation method, belonging to the field of magnetic materials. Using at least nano-boron powder and iron-silicon soft magnetic alloy powder as raw materials, high-temperature diffusion and high-temperature nitriding treatments are employed. Part of the nano-boron powder forms a high-resistivity iron-silicon-boron permeation layer on the surface of the iron-silicon soft magnetic alloy powder, while some nano-boron powder forms a boron nitride insulating layer with both high resistivity and high thermal stability between the iron-silicon soft magnetic alloy powders, effectively controlling eddy currents. Hot pressing further increases the density of the metal soft magnetic powder core, reduces the demagnetizing field, thereby improving permeability and reducing hysteresis loss. Thus, excellent low-frequency magnetic properties of high density, high permeability, and low loss are simultaneously obtained in the metal soft magnetic powder core.

The invention provides an SOT-MTJ device, and the device comprises two bottom metal layers which are formed on a substrate; the two bottom through holes are opposite to the two bottom metal layers one by one; the SOT track layer is positioned on the two bottom through holes and is in contact with the two bottom through holes; an MTJ film stack on the SOT track layer; wherein the bottom through hole comprises two conducting layers, the first conducting layer located on the lower layer is made of a low-resistivity conducting material, and the second conducting layer located on the upper layer and in direct contact with the SOT track layer is made of a high-resistivity conducting material. According to the invention, the overturning efficiency of the SOT-MTJ device can be improved.

The invention discloses a FeNi soft magnetic composite material based on tetrabutyl orthosilicate hydrolysis coating and a preparation method of the FeNi soft magnetic composite material. According to the method, through a controllable sol-gel process, tetrabutyl orthosilicate is hydrolyzed to generate SiO2 gel, then a uniform and ultrathin SiO2 gel layer is generated on the surface of FeNi powder in situ, and then heat treatment densification is performed to obtain the FeNi soft magnetic composite material coated with SiO2 in an insulation mode. The SiO2 insulating layer is firmly combined with the matrix metal powder, the thermal stability is good, high frequency and high resistivity are achieved, and meanwhile dilution of non-magnetic relative magnetic performance is reduced to a great extent. The final magnetic core is obtained through compression molding and annealing heat treatment, has the excellent characteristics of high effective magnetic conductivity and low high-frequency magnetic core loss, and is particularly suitable for various efficient and miniaturized power electronic devices in the MHz frequency band.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The invention provides a nickel-based precise high-resistance alloy wire, and relates to the technical field of resistance alloys, and the alloy wire comprises the following chemical components in percentage by mass: 18%-22% of chromium, 1.5%-2.5% of aluminum, 1.0%-2.0% of iron, 1.2%-2.2% of copper, 0.5%-1.2% of manganese, 0.3%-0.8% of titanium, 0.05%-0.15% of zirconium, 0.01%-0.08% of cerium and the balance of nickel. The resistivity of the alloy wire at the temperature of 20 DEG C is larger than or equal to 1.35 mu omega.m, the average resistance temperature coefficient of the alloy wire at the temperature of 20-155 DEG C is-12 ppm / DEG C-15 ppm / DEG C, the Vickers hardness of the alloy wire is 180-240, and the oxidation weight increment at the temperature of 800 DEG C per 100 h is smaller than or equal to 0.90 mg / cm. By improving the composition proportion and the preparation method of the alloy wire, perfect balance of high resistivity, low resistance temperature coefficient, excellent heat resistance and processability can be realized.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

The utility model provides an insulating shockproof foot, include: including shockproof foot body, shockproof foot body has opposite first end and second end, the first end surface has insulating material and is used for installing in equipment ground pin to prevent the first end with the equipment ground pin interval forms the conductive path, the second end is used for installing fixedly to shockproof foot body. The utility model discloses through using insulating material on the first end surface, and insulating material has high resistivity, can effectively prevent the current through, namely effectively blocked the current conduction between equipment ground pin and shockproof foot, reached the effect of electrical isolation, make the current unable to flow through shockproof foot to the ground, avoided equipment secondary grounding phenomenon, thereby avoided the influence equipment's work performance.

The application discloses application of high-thermal-stability hydrofluoroether, and the high-thermal-stability hydrofluoroether has a structural formula of HCF2CF2CF2CF2CH2OCF2CF2H, and is used as a coolant for a cooler of a temperature control device in a semiconductor product processing process, and has the advantages that the high-thermal-stability hydrofluoroether with the specific molecular structure is used as the coolant for the cooler of the temperature control device in the semiconductor product processing process, the substance is compatible with most materials in a wide temperature range, has good thermal stability, chemical inertia and non-corrosiveness, is non-toxic in the use process, has good environmental and safety characteristics, has an ODP value of 0 and a very low GWP value, and the substance has excellent dielectric properties, low viscosity and high resistivity, and is especially suitable for a heat transfer fluid in a semiconductor wafer etching process.

The application belongs to the technical field of testing, and discloses an integrated mobile object electric quantity detection sensor, which comprises a center probe, a hard interlayer, a filler or a primary circuit, a split shell and a lead wire, can detect the electric quantity of a charged object passing through the sensor, and the obtained response signal amplitude is positively correlated with the electric quantity. The center probe is made of a high-conductivity material and is connected with the lead wire; the center probe is wrapped with a high-resistivity hard interlayer; the hard interlayer is provided with a split shell, the lead wire is led out from the split shell, the lead wire is provided with a shielding shell and is connected with the split shell, the space part in the hard interlayer and the split shell is filled with the filler, and the primary circuit can also be placed in the space to convert and amplify the signal. The application realizes the detection of the electric quantity of a mobile object, and improves the reliability, temperature resistance and shielding property of the connection between the sensor and the cable.

The application provides an ink cartridge chip, an ink cartridge and an inkjet printing device. The ink cartridge chip comprises a substrate and an electronic module. The electronic module comprises a plurality of functional pins. A plurality of connection terminals are arranged on a first surface of the substrate. Each of the plurality of connection terminals comprises a contact area which is electrically contacted by a stylus on the printing device. At least one of the connection terminals comprises a low-resistivity component and a high-resistivity component. The low-resistivity component comprises or is electrically connected to the contact area. The low-resistivity component is electrically connected to the functional pin. The high-resistivity component has a resistance between an edge of the high-resistivity component and the low-resistivity component which is greater than a resistance between the contact area and the functional pin. The ink cartridge provided by the application has the ink cartridge chip described above. The application can avoid signal interference between different connection terminals when foreign matter such as ink drops.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The invention relates to a thin-film resistor modification method, which comprises the following steps of: sputtering a thin-film resistor on a rough surface of a copper foil in vacuum, and then carrying out plasma nitriding or carburizing treatment on the thin-film resistor to obtain a resistor-embedded copper foil. The modified thin-film resistor has low TCR (temperature coefficient of resistance) and small resistance fluctuation along with temperature change; the resistivity of the thin-film resistor can be controlled according to the carburizing or nitriding content, the high-resistivity buried copper foil is prepared, and the method has a good application prospect.

A quantifiable electromagnetic relay includes a housing, a PCB board, and two leading-out pieces extending from an inside to a first side of the housing and connected to a contact assembly inside the housing; one leading-out piece includes a plate-like sampling resistor piece made of high resistivity materials and conductive pieces connected at two ends of the sampling resistor piece, two sampling pins extending in the same direction are arranged at the two ends of the sampling resistor piece; the PCB board is connected to two sampling pins; a through-hole is provided in the sampling resistor piece. An induced current generated by a first closed loop formed by the through-hole offsets an induced current generated by a second closed loop formed by the sampling resistor piece, the sampling pins, and the PCB board in the external alternating magnetic field, thereby enhancing the relay's ability to resist interference.

The invention relates to the technical field of high-voltage direct-current power transmission equipment, and discloses a direct-current composite insulator umbrella cover with a double-gradient structure, a preparation process and a composite insulator, the umbrella cover is of a three-layer composite structure, and the umbrella cover sequentially comprises a high-resistivity inner layer, a high-dielectric middle layer and a micro-conductive outer layer from inside to outside; the volume resistivity of the high-resistivity inner layer is larger than 1 * 10 < 13 > omega.m, and the thickness of the high-resistivity inner layer is 10%-20% of the total thickness of The volume resistivity of the high-dielectric middle layer is 1 * 10 < 10 >-1 * 10 < 12 > omega.m, the relative dielectric constant is 15-25, and the thickness of the high-dielectric middle layer is 60%-80% of the total thickness of the umbrella cover; the volume resistivity of the micro-conductive outer layer is 1 * 10 < 8 >-1 * 10 < 10 > omega.m, the relative dielectric constant is 5-8, and the thickness is 5%-20% of the total thickness of the umbrella cover. The technical problems that an existing epoxy hard composite insulator umbrella cover is uneven in electric field distribution and surface charges are prone to accumulation can be solved, and automatic regulation and control of the electric field in the insulator body and rapid discharge of the surface charges are achieved.

The invention provides a wide-temperature high-frequency high-impedance manganese zinc ferrite material and a preparation method thereof, and relates to the technical field of magnetic materials. The manganese zinc ferrite material comprises main components and auxiliary components, the main components comprise Fe2O3, ZnO, Mn3O4 and MgO, and the auxiliary components comprise Na2O, Co2O3, Li2O and K2O; the high-frequency high-impedance manganese-zinc ferrite material with the wide-temperature characteristic provided by the invention has the characteristics of high magnetic conductivity and high resistivity, is good in high-frequency impedance characteristic, relatively stable in magnetic conductivity and high-frequency impedance at the temperature of-40 to 120 DEG C, small in temperature influence change, and capable of stably working in an environment with sudden temperature change; and stable and safe operation of instruments and equipment is ensured.

The invention discloses a vertical JFET (Junction Field Effect Transistor) power device for enhancing gate end driving capability by ohmic contact and a manufacturing method thereof, and belongs to the technical field of semiconductor power devices. In order to solve the problem of poor switching performance caused by high electrical resistivity of a grid active region and serious attenuation of a driving signal in the existing vertical JFET, the invention provides a metal ohmic contact layer (such as nickel) formed on the surface of the grid active region. And the low-resistance metal layer is connected in parallel with the grid electrode P region, and an efficient current path from the grid electrode contact end to each grid junction in the chip is constructed, so that the grid electrode resistance is greatly reduced, and the grid end driving capability is enhanced. According to the manufacturing method, an ohmic contact preparation step in the prior art is utilized, introduction of non-compatible materials such as polycrystalline silicon and complex procedures is not needed, and gate source short circuit is reliably prevented through the design of selectively reserving an insulating layer above a gate region. According to the invention, the switching speed and reliability of the device are improved, and excellent process compatibility and cost advantages are maintained.

According to the dissimilar metal material melt-brazing optimization method and device, a Ti2AlNb plate and a titanium alloy plate are sequentially arranged between an electrode and a controllable magnetic field, welding current is applied to the Ti2AlNb plate through the electrode so as to generate Joule heat, and by means of the blocking effect of a high-resistivity oxidation film between the plates, the welding temperature of the Ti2AlNb plate and the welding temperature of the titanium alloy plate can be controlled. The upper surface of the titanium alloy plate is uniformly heated to be molten to form a molten material, the molten material flows and is stirred at a high speed under the action of a controllable magnetic field below the titanium alloy plate and a Lorentz force generated by welding current, aggregation of oxide film defects near an interface is inhibited, and heterogeneous materials on the two sides of the interface form a thin and uniform intermetallic compound. The high-melting-point metal is adopted for heating, the controllable magnetic field is arranged in cooperation with staged matching of the welding current, local melting of the low-melting-point metal is achieved through uniform temperature rising and heat transfer of the high-melting-point metal, the nugget growth process and the low-melting-point metal oxide film breaking process are accurately regulated and controlled, and finally the brazing interface is formed.

The invention provides an apparent resistance correction method and system based on a resistivity method, a medium and equipment, and relates to the technical field of electric field detection. According to the technical scheme provided by the invention, the intra-group control scheme is generated by matching the preset optimization target corresponding to the attribute tag, adjustment is performed according to the inter-group influence factors to form the target control scheme, and the measurement strategy can be adaptively adjusted according to the geologic features. After the vector receiving voltage is acquired, vector synthesis is performed on the initial apparent resistance according to the horizontal included angle to obtain the target apparent resistance, so that the problem that a single component signal is weak and is easily interfered by noise in a traditional resistivity method is effectively solved. When component signals in a certain direction are particularly weak or abnormal, negative apparent resistivity can be avoided by adopting a vector synthesis mechanism, and the data stability is improved. The convergence of the inversion algorithm and the stability of the solution are obviously improved by improving the quality of the final input data and fully utilizing the vector information, vector synthesis can be carried out on component signals, and the inversion effect of the resistivity method is improved.

The invention relates to an IZO target material and a preparation method thereof, the method adopts a new raw material formula to prepare the IZO target material, and the raw material formula is that zinc scandium oxide coated indium oxide (IZSO) powder is mixed with nano zirconium oxide (ZrO) powder and nano non-stoichiometric indium oxide (In2O3-X (x = 0.02-0.05)) powder in proportion. Compared with a traditional IZO target material, when the thickness of an IZO thin film prepared from the IZO target material is 100 nm, the mobility is 55-60 cm / V.s, and the resistivity is (7.2-15) * 10 <-5 > omega.cm, that is, the mobility of the IZO thin film prepared from the IZO target material is higher, and the resistivity is lower.

The application provides a resistivity-based apparent resistivity correction method, system, medium and equipment, and relates to the technical field of electric field detection. The technical scheme provided by the application generates an in-group control scheme by matching a preset optimization target corresponding to an attribute label, adjusts a target control scheme according to inter-group influencing factors, and can adaptively adjust a measurement strategy according to geological characteristics. After collecting a vector receiving voltage, the initial apparent resistivity is vector synthesized according to a horizontal angle to obtain a target apparent resistivity, effectively solving the problem that a single component signal is weak and susceptible to noise interference in the traditional resistivity method. When a certain direction component signal is particularly weak or abnormal, the vector synthesis mechanism can avoid the appearance of negative apparent resistivity, improving data stability. The improvement of the final input data quality and the full use of vector information significantly improve the convergence of the inversion algorithm and the stability of the solution, can perform vector synthesis on the component signal, and improve the inversion effect of the resistivity method.

The present disclosure provides a bulk acoustic wave resonator and a preparation method thereof, and an electronic device, and belongs to the technical field of communication. The bulk acoustic wave resonator comprises a substrate substrate (10), a first electrode (11), a piezoelectric layer (12) and a second electrode (13). The bulk acoustic wave filter further comprises a first biasing resistance layer (17) arranged on the side of the first electrode (11) close to the substrate substrate (10), and a first electrical isolation layer (18) arranged between the first biasing resistance layer (17) and the first electrode (11). The material of the first biasing resistance layer (17) is a high resistivity material. And / or, a second biasing resistance layer (110) arranged on the side of the second electrode (12) away from the substrate substrate (10), and a second electrical isolation layer (19) arranged between the second biasing resistance layer (110) and the second electrode (13). The material of the second biasing resistance layer (19) is a high resistivity material.

Disclosed in the present invention are a low-dielectric-absorption, low-mismatch, precision, linear MIM capacitor and integration technology. The integration technology comprises the integration steps of: 1) forming an active region and an isolation field oxide region; 2) forming a thick gate oxide layer and a thin gate oxide layer; 3) depositing a polysilicon layer and constructing a polysilicon gate of an MOS transistor; 4) completing photolithography and implantation of a source and a drain for a multi-gate oxide high-low voltage BiCMOS / CMOS; 5) improving the flatness of the lower surface region of a metal thin film resistor by means of chemical mechanical planarization; 6) sputtering a high-resistivity microcrystalline titanium thin film on a lower electrode of a metal MIM capacitor by means of a PVD method; 7) depositing a silicon nitride SixNyHz as a dielectric layer of the metal MIM capacitor by means of PECVD; 8) sputtering the high-resistivity microcrystalline titanium thin film on an upper electrode of the metal MIM capacitor by means of a PVD method; and 9) sputtering an aluminum-copper film layer and completing etching processing of a metal connection line. The present invention optimizes the problem of precision matching of metal MIM capacitors, improves the packaging function density and the device density of integrated circuits, and promotes the miniaturization and reduced form of high-performance integrated circuits.

The utility model provides a battery capable of reducing internal resistance and a battery pack, which belong to the technical field of batteries, and comprise: a housing comprising a main housing and a cover plate, the cover plate is covered on the main housing, and the cover plate is provided with a first opening; the battery cell is arranged in the main shell, the battery cell is provided with a first tab, and the first tab is a negative tab; the first pole guide assembly is arranged in the main shell, one end of the first pole guide assembly is electrically connected with the first pole lug, the other end of the first pole guide assembly extends out of the shell from the first opening, and the surface, extending out of the shell, of the first pole guide assembly is a first pole connecting surface. The battery has the beneficial effects that one end of the first pole diversion assembly is electrically connected with the negative tab, and the other end of the first pole diversion assembly extends out of the shell from the first opening and extends out of the surface to serve as a first pole connecting surface, so that the winding core current can be directly guided out through the first pole diversion assembly, and the main shell and the cover plate with relatively high resistivity are prevented from participating in the diversion process; the ohmic internal resistance of the whole battery cell is reduced, so that the fast charging performance of the battery is improved.

A thin film transistor includes an active layer comprising: a first region; a second region on one side of the first region; and a third region on another side of the first region, wherein when a direction connecting source and drain electrodes is a first direction, the first, second, and third regions are along a second direction, and the first region comprises: a channel portion overlapping with the gate electrode; a first connecting portion on one side of the channel portion; And a second connecting portion on the other side of the channel portion, wherein the second region includes first and second dopant reduction portions, the third region includes third and fourth dopant reduction portions, and in a plane view, the gate electrode is inside the active layer, and the first, second, third, and fourth dopant reduction portions each have a higher resistivity than the first and second connecting portions.

In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher resistivity than the conductive pattern before the converting through the opening, and the mask pattern is removed.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The invention discloses an air-magnetic overhanging type micro-low gravity test air-floating workbench capable of inhibiting residual magnetism and eddy current interference. The air-magnetic overhanging type micro-low gravity test air-floating workbench comprises a rigid bearing framework and a functional composite material layer. The rigid bearing framework is made of non-magnetic high-specific-stiffness aluminum alloy, and mechanical supporting and magnetic field isolation are achieved. And the functional composite material layer is compounded by uniformly dispersing and consolidating corrosion-resistant nickel-based soft magnetic particles in a non-magnetic matrix, and is used as a gas-magnetic coupling working interface. The adopted nickel-based soft magnetic particles have high saturation flux density, low coercive force, high resistivity and good chemical stability, it is ensured that the functional composite material layer formed by the nickel-based soft magnetic particles has lasting and reliable working surface performance, and residual magnetism interference force and eddy current damping force are fundamentally eliminated on the premise that needed vertical adsorption force is maintained. According to the design, the unexpected horizontal disturbing force generated by the air floatation working table is reduced to one thousandth of the rated vertical bearing force of the gas magnetic bearing, and the precision of dynamic simulation in a micro-low gravity ground experiment is remarkably improved.