392 results about "High resistivity" patented technology

To provide a high resistivity polycrystalline substrate, and a method for manufacturing the high resistivity polycrystalline substrate.SOLUTION: A method contains steps of: forming a polycrystalline substrate having a high resistibility (e.g., 1×10^5 or 1E+5 ohmic centimeter or more); forming a single crystal substrate by fusing a semiconductor grade silicon with a high grade, and thereafter, using a seed crystal, and starting a formation of the single crystal; bonding a second surface of the polycrystalline substrate when the polycrystalline substrate and the single crystal substrate are formed to a third surface of the single crystal substrate by using a surface active bonding (SAB) technique; and removing one part of the single crystal substrate.SELECTED DRAWING: Figure 4A

According to the preparation method and application of the metal soft magnetic composite material, the surface of the metal soft magnetic powder is coated with the metal oxide insulating layer through the ALD technology, then the characteristics that the ferrite phase layer is high in resistivity, low in loss and good in high-frequency characteristic are utilized, insulating coating is conducted on the surface through the ALD technology, and the metal soft magnetic composite material is obtained. And a ferrite coating layer is formed on the surface of the metal soft magnetic powder during high-temperature annealing, so that electric contact among particles is blocked, the resistivity of the soft magnetic material is improved, and the eddy-current loss at high frequency is reduced, thereby improving the high-frequency performance.

The invention relates to the technical field of semiconductor etching materials, and provides a method for preparing a high-resistivity silicon carbide material and the silicon carbide material. The method comprises the following steps that a substrate is placed in chemical vapor deposition equipment, the chemical vapor deposition equipment is vacuumized, and then inert gas is introduced; silicon carbon source gas and carrier gas are injected into the chemical vapor deposition equipment through a first gas inlet channel, boron source gas is injected into the chemical vapor deposition equipment through a second gas inlet channel, and silicon carbide is deposited on the surface of the substrate through a chemical vapor deposition process; after gradient annealing is carried out, the substrate is removed; wherein in the step 2, the distance between the air inlet of the first air inlet channel and the air inlet of the second air inlet channel is larger than or equal to 20 cm. According to the method, the doping amount of boron in silicon carbide can be obviously improved, so that the resistivity of silicon carbide is improved, and the etching resistance of silicon carbide is improved.

The invention provides a silicon-carbon negative electrode material, a preparation method thereof and a battery. The method for preparing the silicon-carbon negative electrode material comprises the following steps: carrying out first carbonization treatment on thermoplastic resin to obtain resin carbon; uniformly mixing the resin carbon with an activating agent, and performing activated pore-forming to obtain resin-based porous carbon; performing second carbonization treatment on the resin-based porous carbon to obtain a porous carbon precursor; performing silicon vapor deposition on the porous carbon precursor to obtain silicon deposition porous carbon; and forming a carbon coating material on the surface of the silicon deposition porous carbon to obtain the silicon-carbon negative electrode material. Therefore, through the preparation method, the porous carbon precursor with high specific surface area, high pore volume and low resistivity can be prepared, so that the silicon-carbon negative electrode material with relatively high specific capacity and relatively low resistivity can be obtained.

The present invention discloses a low-power metal soft magnetic composite material and a preparation method thereof. The main components of the material are Si and Fe, and the preparation process is ingot casting, coating diffusion, crushing and screening, pressing and forming, and annealing. The advantage is that by coating and diffusing a low-melting point, high-resistivity, and easily oxidizable substance to the FeSi alloy grain boundary, not only the overall resistivity of the material is improved, but also the coating layer is evenly and stably coated on the surface of the grain, tightly combined, not easy to fall off, and can effectively avoid the problem of the insulating layer easily falling off and decomposing and failing in the subsequent pressing and annealing process. Finally, a low-power metal soft magnetic composite material is obtained by this method.

The invention discloses an AlGaInP red light LED chip structure with a polarization-induced tunnel junction and a preparation method thereof. The chip structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type etching barrier layer, an n-type GaAs ohmic contact layer, an n-type limiting layer, a non-doped InGaP / quantum well structure, a p-type spacer layer, a p-type AlGaInP polarization-induced doping layer, an insertion layer and an n-type ohmic contact layer from bottom to top. Wherein the p-type AlGaInP polarization induction doping layer introduces a piezoelectric polarization electric field through an Al component gradual change design, high-density two-dimensional hole gas is formed through induction, and the high-Al component insertion layer and the n-type ohmic contact layer form a tunnel junction; according to the invention, the problems of low p-type doping efficiency and high resistivity of the AlGaInP material with high Al component are fundamentally solved, the epitaxial structure and the chip process are simplified, the series resistance of the chip is reduced, the luminous efficiency is improved, the yield is improved, and the method has remarkable technical and commercial values.

The invention provides a hot-pressing preparation method and application of a magnetic powder core. The hot-pressing preparation method comprises the following steps: carrying out insulation coating on glassy state soft magnetic amorphous alloy powder to obtain an intermediate powder material with a coating structure; the coating structure comprises a first coating layer or comprises a first coating layer and a second coating layer which are arranged in sequence; the first coating layer comprises nano inorganic particles and phosphate, and the second coating layer comprises an organic coating material; carrying out hot pressing treatment on the material containing the intermediate powder material to obtain a magnetic powder core; the adopted glassy soft magnetic amorphous alloy powder has a supercooled liquid phase region, the lowest temperature and the highest temperature of the supercooled liquid phase region are Tg and Tx respectively, the temperature of the hot pressing treatment is (Tg-20 DEG C)-(Tx-20 DEG C), the pressure of the hot pressing treatment is 100-500 MPa, and the holding time is 2 s-120 min. According to the magnetic powder core provided by the invention, the coating layer can be kept complete in the hot pressing process, and the magnetic powder core has relatively high density, high resistivity, high magnetic conductivity and low loss.

A Floquet mode traveling wave parametric amplifier (TWPA) is disclosed. The Floquet mode TWPA comprises a plurality of stages, where each stage is made up of a nonlinear element and a shunt capacitor. The nonlinear elements may be Josephson junctions, or a combination of series and / or parallel Josephson junctions. The Floquet mode TWPA is designed such that the critical current of the nonlinear elements in each stage is not constant. In some embodiments, the ratio of the largest critical current to the smallest critical current in the Floquet mode TWPA is at least 2:1. In some embodiments, the nonlinear elements with the largest critical current are disposed at or near the input or output of the amplifier. In this way, reflections and backward amplification may be minimized. Further, the TWPA is formed using planar capacitors on a high resistivity substrate, or using low loss parallel plate capacitors.

Provided is an epitaxial wafer having a silicon epitaxial film on a silicon single crystal substrate having a resistivity of 10 [Omega] * cm or more and 5000 [Omega] * cm or less, the epitaxial wafer being characterized in that the concentration of carbon atoms in the silicon epitaxial film is 5 * 1017 atoms / cm < 3 > or more and less than 2 * 1019 atoms / cm < 3 >, and carbon defects are formed in the silicon epitaxial film. As a result, provided are: an epitaxial wafer and an SOI wafer which can be manufactured with a small number of steps without using a high-resistivity substrate, are easy to process, and more reliably reduce harmonics; and a method for manufacturing the epitaxial wafer and the SOI wafer.

To prevent solder wetting on a resistor formed of a high specific resistance material, that can be used in the applications for large current detection.SOLUTION: A multilayer resistor includes a resistor having a plate shape and including a first flat surface and a second flat surface in a thickness direction, and a first electrode formed on the first flat surface and a second electrode formed on the second flat surface. The resistor includes a metal body formed of an electroconductive metal material, and an insulating particle formed of an insulating material. The insulating particle includes a first insulating particle with a particle diameter of 5 μm or more. At the implementation on a printed board, an end surface of the resistor is exposed and the second electrode is connected through the solder.SELECTED DRAWING: Figure 1

The invention discloses a platinum-iridium series electric contact material, and belongs to the technical field of platinum-iridium series electric contact materials. According to the platinum-iridium alloy, alloy elements of Nb, Ru and Re are added into the platinum-iridium alloy, expensive precious metal raw materials of Pt and Ir can be saved, a platinum-iridium alloy ingot blank is prepared through the high-flux electric arc melting technology, and then the platinum-iridium alloy ingot blank is subjected to the machining processes of rolling, drawing, heat treatment and the like to finally form finished products of sheets, wires and the like. The prepared platinum-iridium electric contact material has the characteristics of high melting point, high density, high hardness, wear resistance, high resistivity, stable contact resistance, fusion welding resistance, arc ablation resistance and the like, and can be applied to materials of components such as igniters, spark plugs, relay contacts, transmitting tube filaments and the like.

The invention relates to the technical field of ceramic substrates, and provides a high-resistivity aluminum nitride ceramic substrate and a preparation method thereof. The high-resistivity aluminum nitride ceramic substrate comprises the following raw materials in parts by weight: 75-85 parts of aluminum nitride powder, 4-8 parts of a sintering aid, 3-6 parts of a functional aid, 8-12 parts of a binder, 1-5 parts of a plasticizer, 1-3 parts of a dispersant and 65-75 parts of a solvent, the functional additive comprises carbide, tungsten oxide and yttria-stabilized zirconia in a mass ratio of (1-9): 2: 1. According to the technical scheme, the problem of insufficient strength of the aluminum nitride ceramic substrate in the prior art is solved.

In order to solve the problems of insufficient bonding force and high resistivity of the existing conductive silver paste, the invention provides the conductive silver paste, which comprises silver powder, a first solvent and acrylic acid modified epoxy resin, and the mass content of free acryloyloxy in the acrylic acid modified epoxy resin is 1-10%. Meanwhile, the invention also discloses a preparation method of the conductive silver paste and a chip polymer laminated aluminum capacitor comprising the conductive silver paste. The conductive silver paste provided by the invention has relatively low resistivity, relatively high bonding strength and high temperature resistance.

The invention relates to the technical field of ceramic materials, in particular to aluminum nitride ceramic with high resistivity at high temperature and a preparation method of the aluminum nitride ceramic. The aluminum nitride ceramic comprises the following components in parts by weight: 94-98 parts of aluminum nitride, 2-6 parts of yttrium oxide, 0.5-1 part of a dispersant, 1-2 parts of a binder, 70-90 parts of a solvent and 0.5-2 parts of a grinding medium. Yttrium oxide is selected as a sintering aid, so that the resistivity can be improved, and the effect of reducing the sintering temperature can also be achieved; according to the invention, hot pressing sintering is firstly adopted, and then a hot isostatic pressing technology is adopted, so that the density of the aluminum nitride ceramic is greater than 3.30 g / cm < 3 >, and the volume resistivity is greater than 1E + 09 omega.cm at a high temperature of 650 DEG C.

The invention discloses a silicon rod electrical performance detection device and method, and the device comprises a visual collection module which determines the diameter and the central point position of the end face of a silicon rod; the end face detection module performs multi-point detection according to the end face point position information to obtain the end face state of the silicon rod; and the electrical performance detection module adjusts the detection posture according to the end face state of the silicon rod so as to fit the end face of the silicon rod and complete detection. The application main body of the detection method is the detection equipment, and the method comprises the following steps: A, the visual acquisition module acquires a silicon rod image to determine the position of an end surface point of a silicon rod; b, an end face detection module performs multi-point detection on the end face of the silicon rod according to the end face point positions to obtain end face inclination; c, the detection end of the electrical performance detection module can be attached to the end face of the silicon rod, and the resistivity of the silicon single crystal rod is determined by obtaining the service life information of minority carriers of the silicon single crystal in the silicon rod. The equipment provided by the invention is suitable for detecting various silicon rods, and is high in universality and high in resistivity detection precision of the silicon single crystal rod.

The invention discloses a magnetic powder core and a preparation method thereof. The preparation method of the magnetic powder core comprises the four steps of preparation of gas atomization iron-silicon soft magnetic powder, insulation coating, compression molding and annealing heat treatment. The iron-silicon soft magnetic powder is prepared through a gas atomization process, so that the iron-silicon soft magnetic powder has very good soft magnetic performance and has the advantages of low price, high magnetic conductivity, high resistivity, low coercive force, low loss, stable direct current bias characteristic and good temperature stability. Then, the iron-silicon soft magnetic powder is subjected to insulation coating; due to the fact that the aerosolized iron-silicon magnetic powder base body is subjected to preheating activation, ball milling through the insulation modifier and the heat treatment process, the magnetic conductivity and the insulation performance of the obtained iron-silicon powder product are improved in a coordinated mode; and after compression molding and annealing heat treatment, a high-temperature-resistant and corrosion-resistant magnetic powder core product is finally obtained.

A quantifiable electromagnetic relay includes a housing, a PCB board, and two leading-out pieces extending from an inside to a first side of the housing and connected to a contact assembly inside the housing; one leading-out piece includes a plate-like sampling resistor piece made of high resistivity materials and conductive pieces connected at two ends of the sampling resistor piece, two sampling pins extending in the same direction are arranged at the two ends of the sampling resistor piece; the PCB board is connected to two sampling pins; a through-hole is provided in the sampling resistor piece. An induced current generated by a first closed loop formed by the through-hole offsets an induced current generated by a second closed loop formed by the sampling resistor piece, the sampling pins, and the PCB board in the external alternating magnetic field, thereby enhancing the relay's ability to resist interference.

The invention discloses an X7R barium titanate-based dielectric ceramic material with high bias stability and reduction resistance, the chemical composition expression of the material is BaTiO3-aMnO2-bCaZrO3-cSiO2-xmol% Yb2O3, in the formula, a is 0.005 to 0.01, b is 0.02 to 0.06, c is 0.005 to 0.02, and 0.5 lt; xlt; 3. The particle size of the X7R barium titanate-based dielectric ceramic material after sintering can be as small as 200nm, the X7R barium titanate-based dielectric ceramic material is very beneficial to the demand of miniaturized MLCC, not only has high bias stability and reduction resistance, but also has high resistivity and low loss, the ceramic resistivity reaches 1011 omega.cm, the dielectric constant is up to 1400 or above, the temperature stability TCC is less than or equal to 15% in the range of-55 DEG C to 125 DEG C, the X7R standard is met, and the dielectric ceramic material has good application prospects. The loss is lower than 1%, and the direct-current bias stability is lower than 7%. A solid phase method is used for preparation, and the method is simple in process, environmentally friendly, good in repeatability, moderate in cost and suitable for industrial production.

This invention proposes a metal soft magnetic powder core with excellent low-frequency magnetic properties and its preparation method, belonging to the field of magnetic materials. Using at least nano-boron powder and iron-silicon soft magnetic alloy powder as raw materials, high-temperature diffusion and high-temperature nitriding treatments are employed. Part of the nano-boron powder forms a high-resistivity iron-silicon-boron permeation layer on the surface of the iron-silicon soft magnetic alloy powder, while some nano-boron powder forms a boron nitride insulating layer with both high resistivity and high thermal stability between the iron-silicon soft magnetic alloy powders, effectively controlling eddy currents. Hot pressing further increases the density of the metal soft magnetic powder core, reduces the demagnetizing field, thereby improving permeability and reducing hysteresis loss. Thus, excellent low-frequency magnetic properties of high density, high permeability, and low loss are simultaneously obtained in the metal soft magnetic powder core.

The invention provides an SOT-MTJ device, and the device comprises two bottom metal layers which are formed on a substrate; the two bottom through holes are opposite to the two bottom metal layers one by one; the SOT track layer is positioned on the two bottom through holes and is in contact with the two bottom through holes; an MTJ film stack on the SOT track layer; wherein the bottom through hole comprises two conducting layers, the first conducting layer located on the lower layer is made of a low-resistivity conducting material, and the second conducting layer located on the upper layer and in direct contact with the SOT track layer is made of a high-resistivity conducting material. According to the invention, the overturning efficiency of the SOT-MTJ device can be improved.

The invention discloses a FeNi soft magnetic composite material based on tetrabutyl orthosilicate hydrolysis coating and a preparation method of the FeNi soft magnetic composite material. According to the method, through a controllable sol-gel process, tetrabutyl orthosilicate is hydrolyzed to generate SiO2 gel, then a uniform and ultrathin SiO2 gel layer is generated on the surface of FeNi powder in situ, and then heat treatment densification is performed to obtain the FeNi soft magnetic composite material coated with SiO2 in an insulation mode. The SiO2 insulating layer is firmly combined with the matrix metal powder, the thermal stability is good, high frequency and high resistivity are achieved, and meanwhile dilution of non-magnetic relative magnetic performance is reduced to a great extent. The final magnetic core is obtained through compression molding and annealing heat treatment, has the excellent characteristics of high effective magnetic conductivity and low high-frequency magnetic core loss, and is particularly suitable for various efficient and miniaturized power electronic devices in the MHz frequency band.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

Provided is a thermoelectric element which has high thermoelectric conversion efficiency, can obtain a high ZT value, and can be surface-mounted and reduced in size. A thermoelectric element according to the present invention is provided with: a first thermoelectric material part (1) having one end part (1a) and the other end part (1b); a second thermoelectric material part (2) that is directly bonded to the first thermoelectric material part or is bonded to the first thermoelectric material part via a conductor (2a); and a pair of electrodes (3) connected to the first thermoelectric material part, the first thermoelectric material part having an absolute value of a Seebeck coefficient higher than that of the second thermoelectric material part and a resistivity higher than that of the second thermoelectric material part, and an assembly (4) of the first thermoelectric material part and the second thermoelectric material part having end surfaces on one end side and the other end side. The pair of electrodes is in contact with the first thermoelectric material portion without being in contact with the second thermoelectric material portion, and is formed on an end surface on the one end portion side and an end surface on the other end portion side of the joined body.

The invention provides a nickel-based precise high-resistance alloy wire, and relates to the technical field of resistance alloys, and the alloy wire comprises the following chemical components in percentage by mass: 18%-22% of chromium, 1.5%-2.5% of aluminum, 1.0%-2.0% of iron, 1.2%-2.2% of copper, 0.5%-1.2% of manganese, 0.3%-0.8% of titanium, 0.05%-0.15% of zirconium, 0.01%-0.08% of cerium and the balance of nickel. The resistivity of the alloy wire at the temperature of 20 DEG C is larger than or equal to 1.35 mu omega.m, the average resistance temperature coefficient of the alloy wire at the temperature of 20-155 DEG C is-12 ppm / DEG C-15 ppm / DEG C, the Vickers hardness of the alloy wire is 180-240, and the oxidation weight increment at the temperature of 800 DEG C per 100 h is smaller than or equal to 0.90 mg / cm. By improving the composition proportion and the preparation method of the alloy wire, perfect balance of high resistivity, low resistance temperature coefficient, excellent heat resistance and processability can be realized.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

The present disclosure relates to a polycrystalline silicon carbide (SiC) substrate having high resistivity and a method for manufacturing the same. A polycrystalline SiC wafer or substrate with high resistivity facilitates the functionality of a high power electronic device or system in which the polycrystalline SiC wafer or substrate is present, or the polycrystalline SiC wafer or substrate is used to fabricate the high power electronic device or system. At least one embodiment of the wafer includes a polycrystalline SiC wafer or substrate having a high resistivity (e.g., equal to or greater than 1 * 105 or 1E + 5 ohm-cm) and a low warpage. Electronic devices or components made using or from wafers including high resistivity polycrystalline SiC wafers or substrates are further optimized at the time of use and have fewer to none crystal defects. The wafers formed according to the embodiments of the present disclosure have high or very high resistivity compared to existing polycrystalline SiC wafers or substrates.

The utility model provides an insulating shockproof foot, include: including shockproof foot body, shockproof foot body has opposite first end and second end, the first end surface has insulating material and is used for installing in equipment ground pin to prevent the first end with the equipment ground pin interval forms the conductive path, the second end is used for installing fixedly to shockproof foot body. The utility model discloses through using insulating material on the first end surface, and insulating material has high resistivity, can effectively prevent the current through, namely effectively blocked the current conduction between equipment ground pin and shockproof foot, reached the effect of electrical isolation, make the current unable to flow through shockproof foot to the ground, avoided equipment secondary grounding phenomenon, thereby avoided the influence equipment's work performance.

The application discloses application of high-thermal-stability hydrofluoroether, and the high-thermal-stability hydrofluoroether has a structural formula of HCF2CF2CF2CF2CH2OCF2CF2H, and is used as a coolant for a cooler of a temperature control device in a semiconductor product processing process, and has the advantages that the high-thermal-stability hydrofluoroether with the specific molecular structure is used as the coolant for the cooler of the temperature control device in the semiconductor product processing process, the substance is compatible with most materials in a wide temperature range, has good thermal stability, chemical inertia and non-corrosiveness, is non-toxic in the use process, has good environmental and safety characteristics, has an ODP value of 0 and a very low GWP value, and the substance has excellent dielectric properties, low viscosity and high resistivity, and is especially suitable for a heat transfer fluid in a semiconductor wafer etching process.

The application belongs to the technical field of testing, and discloses an integrated mobile object electric quantity detection sensor, which comprises a center probe, a hard interlayer, a filler or a primary circuit, a split shell and a lead wire, can detect the electric quantity of a charged object passing through the sensor, and the obtained response signal amplitude is positively correlated with the electric quantity. The center probe is made of a high-conductivity material and is connected with the lead wire; the center probe is wrapped with a high-resistivity hard interlayer; the hard interlayer is provided with a split shell, the lead wire is led out from the split shell, the lead wire is provided with a shielding shell and is connected with the split shell, the space part in the hard interlayer and the split shell is filled with the filler, and the primary circuit can also be placed in the space to convert and amplify the signal. The application realizes the detection of the electric quantity of a mobile object, and improves the reliability, temperature resistance and shielding property of the connection between the sensor and the cable.