149 results about "Equipotential" patented technology

An electrostatic trap such as an orbitrap is disclosed, with an electrode structure. An electrostatic trapping field of the form U′(r,φ,z) is generated to trap ions within the trap so that they undergo isochronous oscillations. The trapping field U′(r, φ,z) is the result of a perturbation W to an ideal field U(r, φ,z) which, for example, is hyperlogarithmic in the case of an orbitrap. The perturbation W may be introduced in various ways, such as by distorting the geometry of the trap so that it no longer follows an equipotential of the ideal field U(r, φ,z), or by adding a distortion field (either electric or magnetic). The magnitude of the perturbation is such that at least some of the trapped ions have an absolute phase spread of more than zero but less than about 2π radians over an ion detection period Tm.

A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a lower mirror (106) formed of n-type material and disposed upon the upper surface of the substrate, an active region (108) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror (110) formed from isotropic material and disposed upon the active region, an equipotential layer (112) disposed upon the upper mirror portion, a first upper electrical contact (120) disposed upon the equipotential layer, a second upper electrical contact (122) disposed upon the equipotential layer at a particular distance (124) from the first upper electrical contact, a first isolation region (126) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region (128) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer (114, 116) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture (118) of smaller dimension than the particular distance between the first and second upper contacts.

A voltage sensor includes an insulator with mutually insulated electrodes embedded therein. The electrodes are coaxial and cylindrical and overlap axially along part of their lengths. They are mutually staggered and control the surfaces of electric equipotential such that there is a substantially homogeneous electric field outside the insulator and a substantially homogeneous but higher field within a sensing cavity within the insulator. A field sensor is arranged within the sensing cavity to measure the field. This design allows for the production of compact voltage sensors for high voltage applications.