3results about How to "Solve insulation problems" patented technology

This application relates to the field of cable protection pipe technology, and in particular to a low-temperature impact-resistant CPVC cable protection pipe, which includes a protection pipe body, an insulation layer, and a circulation mechanism. An impact-resistant mechanism is fixedly connected to the inner side of the protection pipe body. A cable body is inserted through the insulation pipe body inside the impact-resistant mechanism. A heat exchange mechanism is fixedly connected to the outer surface of the insulation pipe body. The circulation mechanism is located at the top of the protection pipe. This technical solution, through its heat exchange, circulation, impact resistance, and heat recovery structure, combined with a composite insulation layer and a suitable heat exchange medium, efficiently absorbs solar energy and recovers waste heat from the cable, continuously insulating the protection pipe body day and night, resisting external impacts, preventing low-temperature embrittlement and cable overheating, adapting to different low-temperature environments, reducing heat loss and energy consumption, and solving the problems of existing CPVC cable protection pipes such as poor resistance to low temperatures, weak impact resistance, and limited adaptability.

This invention belongs to the field of semiconductor device fabrication technology and discloses a method for fabricating high-temperature, high-power-density SiC power semiconductor devices. The invention has low equipment requirements: due to the short sintering time, few sintering cycles, and all planar sintering, a common hot press and heating table can be used for sintering in air, eliminating the need for expensive nitrogen-filled pressurized silver sintering furnaces. The process is simple and fast: only two sintering cycles, two welding cycles, one bonding cycle, and one potting cycle are needed to complete the fabrication of a double-sided cooled 250°C high-temperature SiC power semiconductor device, including a heat dissipation base plate and insulating potting. A low-cost solution for 250°C high-temperature applications: expensive materials such as nano-silver are used only in some key locations. Utilizing thermal diffusion characteristics, high-temperature solder is used instead of nano-silver at the heat dissipation base plate-substrate welding interface where heat flow is fully diffused. This avoids the problems of high difficulty and high material cost associated with large-area silver sintering without significantly reducing heat dissipation performance.

This invention provides an ultra-high temperature insulation device and a long-life operation method for a solid waste-based high-temperature thermal storage system. The device comprises, from the inside out: a core rod, a thermal storage insulation layer, a gradient insulation layer, a solid isolation layer, and a shell. The core rod has a vacuum suction port inside and spiral fins on its outside. The gradient insulation layer has gradient-distributed insulation properties, and the thermal storage insulation layer comprises a high thermal conductivity ceramic fiber reinforced composite material. Through the solid waste-based gradient insulation layer design and a thermal-electric synergistic management mechanism, the insulation performance and thermal breakdown problems of the high-temperature thermal storage device under extreme operating conditions are solved, achieving long-life operation of the device.