The invention relates to a novel high-speed
gallium oxide solar-blind
ultraviolet photoelectric
detector and a preparation method thereof, and the
detector comprises an amorphous
gallium oxide thin film layer which is provided with a vertically layered
crystal structure. The vertically layered
crystal structure comprises a top layer, a middle layer and a bottom layer, the thickness of the top layer is 3-5nm, and the
crystallinity index is 70-80%; the thickness of the middle layer is 0.1-0.3 nm, and the
crystallinity index of the middle layer is 50-60%; the thickness of the bottom layer is 95-97 nm, and the
crystallinity index of the bottom layer is 20-25%. The
detector is a device with
spatial isolation carrier generation and transmission channels, and solves the "Response Speed (RS)" difficulty. According to the detector, the rising time is smaller than or equal to 2.2 ms, the
decay time is smaller than or equal to 40 microseconds, the
spectral response rate is larger than or equal to 312.6 A.W <-1 >, and the
detection rate is larger than or equal to 1.7 * 10 < 14 > Jones.