1420 results about "Photodiode" patented technology

The invention discloses a laser channel atmospheric turbulence fading real-time compensation device and method based on a galvanometer system, and the method comprises the steps: enabling an incident light beam to irradiate a transparent PCB integrated with a photodiode array after the incident light beam is focused through a convex lens, obtaining the light intensity distribution of a current light spot through the photodiode array, and transmitting the light intensity distribution to a signal processing unit; the signal processing unit coarsely adjusts the deviation direction of the light spots according to the received light intensity distribution data, and aligns the part with the strongest light intensity in the light spots to the end face of the optical fiber; and based on the roughly adjusted light spot deviation direction, the signal processing unit dynamically adjusts the deflection angle of the galvanometer by using a gradient descent method according to the power measurement value of the receiving coupling module, so that the fine adjustment of the light spot deviation direction is realized, and the receiving coupling power is maximized. The objective of receiving optical power maximization is achieved, optical design, electronic control and algorithm optimization are combined, and atmospheric turbulence compensation with high cost performance is achieved.

Various structures for a hybrid pixel array are disclosed. The hybrid pixel array includes a combination of square photodiode (PD) pixel structures and split PD pixel structures. Square PD pixel structures include one photodiode per pixel unit while split PD pixel structures include two photodiodes per pixel unit. In certain instances, square PD pixel structures are used for green light pixels and split PD pixel structures are used for blue and red light pixels in the hybrid pixel array. The combination of square PD pixel structures and split PD pixel structures provides autofocus capability with higher signal strengths. Various techniques for row addressing and readout from the hybrid pixel array are also disclosed.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

An image sensor includes a substrate the substrate including a plurality of unit pixels arranged in a direction parallel to a first direction; a first and second photodiode inside of the substrate in each of the plurality of unit pixels and separated from each other in a second direction, perpendicular to the first direction; and a device isolation film between the plurality of unit pixels. A pair of pixels side-by-side in a third direction, perpendicular to the first and second direction, among the plurality of unit pixels, share a microlens, and at least one of the plurality of unit pixels includes a light shielding film on the substrate. Accordingly, in the image sensor, while maintaining the existing photodiode forming process, the autofocusing function in a vertical direction may be supplemented, and further, performance of the image sensor may be improved.

The invention relates to a back-illuminated image sensor and a preparation method thereof, and relates to the technical field of integrated circuits, in which a plurality of photodiode structures are distributed at intervals along a first direction parallel to a back surface and penetrate through a P-type epitaxial layer along a second direction close to a substrate; the bottom photosensitive part comprises a first horizontal part extending along a first direction and a first longitudinal protruding part extending to the back surface of the substrate; the middle photosensitive part comprises a second horizontal part extending in the first direction and a second longitudinal protruding part extending to the top face of the first horizontal part. The second longitudinal protruding part is located on the side, away from the first longitudinal protruding part, of the first horizontal part in the first direction. The top photosensitive part comprises a third horizontal part extending in the first direction and a third longitudinal protruding part extending to the top face of the second horizontal part. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance and the integration density of the BSI image sensor are improved.

The invention discloses a non-invasive wearable vascular arteriosclerosis assessment system and method based on multi-mode pulse wave signal fusion, and belongs to the field of vascular function assessment. The system comprises a distributed acquisition front end, a butterfly-shaped flexible substrate, an integrated double-accelerometer, a four-wavelength LED (530nm / 660nm superficial blood vessel measurement), a 810nm / 940nm deep artery measurement device, a double-photodiode, a double-impedance electrode and a pressure sensor. The central integrated control end processes a multi-mode signal and realizes pressure-LED current closed-loop control; the upper computer terminal extracts the multi-modal pulse wave time difference of the limbs and the neck, the local and regional pulse wave conduction velocity and the blood oxygen hemoglobin change parameters induced by the standardized posture, the dimension is reduced to 30 through principal component analysis, then the parameters are input into the random forest regression model, and the vascular elasticity index is output. Signal stability is improved through flexible fitting, single-source limitation is solved through multi-modal fusion, signal quality is guaranteed through closed-loop control, sensitivity is enhanced through dynamic physiological excitation, and accuracy and universality of arteriosclerosis assessment are improved.

A carbonation device for beverages includes a carbonation tank to receive a beverage to be carbonated and carbon dioxide so as to generate a carbonated beverage, carbonated with the carbon dioxide, and a dispensing device in fluid communication with the carbonation tank to dispense, through a duct, the carbonated beverage to a container for carbonated beverages, the carbonated beverage flowing along the duct in a flow direction.The carbonation device further includes a carbonation sensor associated with the duct and having a radiation source to generate a radiation which strikes the duct along an irradiation direction incident to the flow direction.The carbonation sensor also includes a first photodiode placed on the irradiation direction from a side opposite to the radiation source with respect to the duct, or as an alternative, a second photodiode placed along a diffusion direction substantially orthogonal to the irradiation direction.

Technology is disclosed for an optical receiver. The optical receiver may include an optical and digital signal processing (ODSP) device. The ODSP device may include a photodiode operable to convert an optical signal to an electrical signal; a digital signal processor operable to generate a digital signal based on the electrical signal; a quantization component operable to generate a quantized output signal based on the digital signal; and a processing device. The processing device may be operable to measure one or more signal statistics of the digital signal; and identify one or more quantization thresholds, wherein the one or more quantization thresholds are computed based on the one or more signal statistics.

A display screen, a display module, and an electronic device are disclosed. The display screen includes a display pixel circuit and a controller. The display pixel circuit includes a first display pixel circuit and a second display pixel circuit. During each frame scan time of the display screen, when any one of the multiple current scan lines is located in a non-display area, the controller controls the input voltage parameter of the first display pixel circuit corresponding to the current scan line located in the display area to a first voltage, and the reset current of the photodiode in the first display pixel circuit to a first current value. When all the multiple current scan lines are located in the display area, the controller controls the input voltage parameter of the second display pixel circuit corresponding to the multiple current scan lines to a second voltage, and the reset current of the photodiode in the second display pixel circuit to a second current value. The deviation between the second current value and the first current value is less than a preset threshold. By using this application, the problem of uneven brightness display can be avoided.

An electro-optical integrated circuit comprising an optical transmitter and an optical receiver is disclosed in which a monolithically integrated electro-absorption modulated laser (EML) can operate bi-directionally in both transmitter and receiver modes. Vertically stacked waveguides for lasers and electro-absorption modulators (EAMs) are provided. The laser and the EAM are optically coupled through a transverse conical vertical optical coupler. The EML includes monolithically integrated electronic circuitry, such as drivers and control electronics for driving the laser as the EML and the EAM in the transmitter mode. The control circuit includes a transimpedance amplifier (TIA). The EAM has a first portion and a second portion that may be independently biased. In receiver mode, the laser current is reduced near a threshold, a first portion of the EAM is biased to absorb residual laser light, while a second portion of the EAM provides photocurrent to the TIA as a photodiode receiver.

The invention relates to an integrated component group comprising: a carrier, in particular a submount, with a first main surface and an opposing second main surface; a laser arranged on the carrier on the first main surface and having a first light-emitting surface and an opposing second light-emitting surface, wherein the laser is configured to emit more laser light via the first light-emitting surface than via the second light-emitting surface during its intended use; and a photodiode integrated into the carrier and configured to detect laser light emitted by the laser from the second light-emitting surface.

Provided is a ranging device capable of suppressing an electric power loss and a decrease in an SNR at low cost.A ranging device of the present disclosure includes a photonic circuit and an electric circuit on the same semiconductor chip, the photonic circuit including: a light source; a waveguide that guides light from the light source; an optical switch distribution network that distributes first light split from the light; a grating array that outputs the first light distributed by the optical switch distribution network to an external target and receives the first light reflected from the target as reflected light; a first coupler that combines the reflected light with second light split from the light; and a first photodiode that photoelectrically converts light combined by the first coupler into a first electric signal, and the electric circuit including: a power supply that supplies electric power to the light source and the optical switch distribution network; and a controller that controls the power supply.

An image sensor may include an array of imaging pixels arranged in rows and columns. A method of operating an imaging pixel is provided that includes accumulating charge in a photosensitive element, allowing the accumulated charge in the photodiode to overflow into a capacitor that is coupled to a reset transistor having a gate terminal configured to receive a reset control signal during an integration phase, and extending the dynamic range of the imaging pixel by dynamically adjusting the reset control signal from a first voltage level to a second voltage level during the integration phase. The reset control signal can be lowered from the first voltage level to the second voltage level in a discrete or continuous fashion such that a portion of the overflow charge in the capacitor represents a linear signal and a portion of the overflow charge in the capacitor represents a non-linear signal.

The invention discloses a micro reagent total phosphorus analyzer and an analysis method, and belongs to the technical field of water quality monitoring. A liquid metering assembly comprises an injection pump, a liquid storage ring and a multi-channel valve; the digestion colorimetric assembly comprises a digestion tube, a heating element, a temperature sensor, a fan, a light source and a photodiode; the liquid discharge assembly comprises a peristaltic pump; a liquid outlet of the injection pump is connected with a first port of the liquid storage ring through the first electromagnetic pinch valve and the second electromagnetic pinch valve in sequence, a second port of the liquid storage ring is connected with a public port of the multi-channel valve, and a sample inlet of the digestion pipe is connected with a first channel of the multi-channel valve and the peristaltic pump through the first high-pressure two-way valve. The other channels of the multi-channel valve are respectively connected with the water sample to be detected, and a total phosphorus detection reagent and a total phosphorus standard solution which are used for carrying out total phosphorus analysis on the water sample to be detected. The micro-reagent total phosphorus analyzer provided by the invention can eliminate cross contamination of reagents, reduce reagent consumption and waste liquid amount, and improve metering precision and detection stability of micro-reagents.

A detection device includes: a plurality of photodiodes arranged on a substrate; a front light including a light guide plate disposed so as to overlap the photodiodes, a light source configured to emit light to a first side surface of the light guide plate, and a plurality of scattering portions provided on the light guide plate and configured to scatter light from the light source; and an optical filter layer provided between the photodiodes and the light guide plate of the front light. The optical filter layer includes a plurality of light guide paths that at least partially overlap the photodiodes, and a light-blocking portion having higher absorbance of the light than the light guide paths. The scattering portions are provided in an area overlapping the light-blocking portion of the optical filter layer on a surface of the light guide plate facing the optical filter layer.

The invention relates to the technical field of optoelectronic devices, and discloses a monolithic integrated full Stokes polarization detector and a preparation method thereof. The full Stokes polarization detector comprises a plurality of PIN photodiodes, a transparent conductive layer formed on the PIN photodiodes, a titanium oxide metasurface structure formed on the transparent conductive layer, a top electrode formed on the transparent conductive layer and a bottom electrode formed at the bottom of the PIN photodiodes. The titanium oxide metasurface structure comprises six metasurface pixels, and the six metasurface pixels are in one-to-one correspondence with the PIN photodiodes. According to the invention, the characteristic of high refractive index of titanium oxide from visible light to near-infrared band is utilized, and six titanium oxide metasurface units are designed and are integrated with the silicon-based PIN photodiode monolithic, so that full Stokes parameter detection of incident light in any polarization state is realized.

The invention discloses an image sensor and a manufacturing method thereof, and belongs to the technical field of semiconductors. The photodiode is arranged in the substrate, and a first concave part is arranged in the photodiode; the deep trench isolation structure is arranged in the substrate, the deep trench isolation structure is located between the adjacent photodiodes, the deep trench isolation structure comprises a light-transmitting graphene layer, and the light-transmitting graphene layer is attached to the photodiodes; the first concave part is filled with a graphene layer to form the photoelectric response region, and the depth of the photoelectric response region is firstly increased and then decreased in the width direction of the photoelectric response region. According to the image sensor and the manufacturing method thereof provided by the invention, the light response range and efficiency of the image sensor can be improved.

An image sensor includes a substrate the substrate including a plurality of unit pixels arranged in a direction parallel to a first direction; a first and second photodiode inside of the substrate in each of the plurality of unit pixels and separated from each other in a second direction, perpendicular to the first direction; and a device isolation film between the plurality of unit pixels. A pair of pixels side-by-side in a third direction, perpendicular to the first and second direction, among the plurality of unit pixels, share a microlens, and at least one of the plurality of unit pixels includes a light shielding film on the substrate. Accordingly, in the image sensor, while maintaining the existing photodiode forming process, the autofocusing function in a vertical direction may be supplemented, and further, performance of the image sensor may be improved.

An assembly of electronic components for reception of data using an optical fibre wherein said assembly comprises: a photodiode; a first amplifier coupled to said photodiode; a second amplifier, whose electrical behaviour is substantially identical to an electrical behaviour of said first amplifier; an impedance network comprising at least two electronic components coupled between an input of said second amplifier and a reference terminal, wherein those at least two electronic components comprise at least two impedance elements, one impedance element being capacitive and another being resistive or inductive, and wherein said at least two electronic components are adjustable under electronic control to adjust the impedance presented by said impedance network; and circuitry for creating a signal formed from a subtraction of outputs of the first and second amplifiers.

An image sensor comprising a first die, a second die, and a plurality of pixel cells arranged in rows and columns to form a pixel cell array is described. The first die and the second die are stacked to form a bonding interface disposed therebetween. A first pixel cell included in the plurality of pixel cells includes a photodiode, disposed within the first die, configured to photogenerate image charge in response to incident light, a flighting diffusion, disposed within the first die, coupled to receive the image charge, and a lateral overflow integration capacitor, disposed within the second die, selectively coupled to the floating diffusion through a first bonding connection formed at the bonding interface.

A pixel includes a photodiode, a supply input, an output and a reading node. A system for reading a charge contained in the photodiode of the pixel includes a biasing circuit configured to bias the output of the pixel. The output of the pixel is connected through a first switch to the biasing circuit. The supply input of the pixel is connected to an energy storage capacitor and to a first end of a second switch. A second end of the second switch is intended to be connected to a DC voltage source. A control circuit controls operation of the first and second switches whereby the pixel is disconnected by the second switch during digitization and powered from the energy storage capacitor.

The utility model discloses a photodiode dark current testing device, comprising an LED lamp, a light shield, a dual-channel power supply, a desk type universal meter, a one-chip microcomputer control board and a multi-channel test board, the light shield is covered on the multi-channel test board, the multi-channel test board is provided with PD sockets having the same number as the channels of the multi-channel test board, and the PD sockets are connected with the desk type universal meter. The PD socket is composed of a 4P socket and Y-shaped sockets arranged side by side. After the scheme is adopted, the efficiency is greatly improved through multi-channel testing, and the vertical pins can be automatically tested through the design of the Y-shaped socket.

The invention provides a signal processing method of an image sensor, which comprises the following steps of: starting a transfer transistor by using a relatively low first starting voltage during LCG to read an image signal of the LCG, and starting the transfer transistor by using a relatively high second starting voltage during HCG to read an image signal of the HCG. Wherein the first turn-on voltage is smaller than the voltage for completely transferring the full well charge of the photodiode to the floating diffusion region under the LCG, so as to ensure that the charge in the photodiode is not completely emptied when the image signal of the LCG is read; the second turn-on voltage is greater than or equal to the voltage for completely transferring the residual charge of the photodiode to the floating diffusion region under the HCG, so that the charge in the photodiode can be completely transferred under low illumination. Compared with the prior art, the method can ensure that charges in the FD cannot exceed a readable range during LCG and HCG, read data distortion cannot be caused, the storage area does not need to be increased, the FD potential change amplitude is not too large during two times of charge transfer, noise can be reduced, the problem of transverse stripes of a lamp tube can be minimized, and the HDR image quality can be improved.

The present disclosure relates to the technical field of optoelectronics, and provides a chip for laser detection, a LiDAR, a vehicle, and a photodiode. The chip for laser detection comprises a substrate, an epitaxial layer, an operating circuit, and a protection circuit. The epitaxial layer is formed over the substrate. The operating circuit is formed on the epitaxial layer. The operating circuit comprises a first photodiode and is configured to detect incident laser at an operating voltage. The protection circuit is formed on the epitaxial layer. The protection circuit is connected in parallel to the operating circuit and comprises a second photodiode. The turn-on voltage of the protection circuit is greater than the operating voltage, and the impedance of the protection circuit when it is turned on is less than the impedance of the operating circuit when it is turned on. The present disclosure can reduce the degree of damage caused by electrostatic discharge to operating circuits in chips.

The invention relates to the technical field of smoke sensors, in particular to a smoke sensor detection device and a detection method thereof.The smoke sensor detection device comprises a mounting base, a mounting frame is fixedly connected to the top of the mounting base, a first mounting plate and a control module are fixedly connected into the mounting base, and an audible and visual alarm is fixedly connected to the exterior of the mounting base; a temperature sensor, a humidity sensor, an air pressure sensor, an airflow velocity sensor, a laser diode, a photodiode and a dual-electrode ion sensor are fixedly connected outside the first mounting plate; the temperature sensor, the humidity sensor, the air pressure sensor, the airflow velocity sensor, the laser diode, the photodiode and the dual-electrode ion sensor are electrically coupled with the control module; according to the system, temperature, humidity, pressure and airflow parameters are collected through multiple types of high-precision sensors, and then the false alarm probability can be reduced through control analysis of the control module.

A detection device includes a light source, and an optical sensor comprising a plurality of photodiodes configured to output pixel data corresponding to a light intensity irradiating the photodiodes. The optical sensor is configured to capture a first image containing a plurality of pieces of first pixel data and a second image that contains a plurality of pieces of second pixel data and is more sensitive than the first image, the second pixel data having a gradation equal to or smaller than a predetermined threshold is selected in the second image, the first pixel data in an area corresponding to a deselected second pixel data is selected in the first image, and a composite image is generated based on the selected second pixel data and the selected first pixel data.

The invention provides a circuit for laser detection, a laser radar and a carrier, and relates to the technical field of photoelectricity. The circuit for laser detection comprises a working circuit and a protection circuit connected in parallel with the working circuit. The working circuit comprises a first photodiode and is configured to detect echoes under working voltage, the protection circuit comprises a second photodiode, doped ions of the second photodiode and doped ions of the first photodiode are distributed in the longitudinal direction, and the break-over voltage of the protection circuit is larger than the working voltage. And the impedance of the switched-on protection circuit is smaller than that of the switched-on working circuit. According to the invention, the degree of damage to the working circuit caused by electrostatic discharge can be reduced.

The invention relates to the technical field of optical communication, in particular to a silicon optical chip monitoring method and device, electronic equipment and a computer readable storage medium, and the method comprises the steps: obtaining an input monitoring value and an output monitoring value integrated by a silicon optical chip, the input monitoring value is an input optical power value collected by an input monitoring photodiode integrated with the silicon optical chip, the output monitoring value is an output optical power value collected by an output monitoring photodiode integrated with the silicon optical chip, and a power ratio parameter is calculated according to the input monitoring value and the output monitoring value; the power ratio parameter is compared with a preset ratio range, and when it is detected that the power ratio parameter is not in the preset ratio range, it is determined that the silicon optical chip has an optical extinction ratio abnormal risk; and outputting a detection result containing the risk that the optical extinction ratio is abnormal, so that the real-time performance of abnormal detection of the optical extinction ratio of the silicon optical chip is improved.

A plurality of vertically arranged layers of diffusion structures are included above a photodiode of a pixel sensor. Each layer of diffusion structures distributes incident light by refraction to provide a greater amount of distribution of the incident light than a single layer of diffusion structures. For example, a top layer of diffusion structures may distribute incident light by refraction, and a bottom layer of diffusion structures may further distribute the distributed incident light from the top layer of diffusion structures before the incident light enters the photodiode of the pixel sensor. This increases the length of the path of travel of photons of the incident light, thereby increasing the likelihood that the photons will be absorbed in the photodiode. Thus, the plurality of vertically arranged layers of diffusion structures may further increase the quantum efficiency (QE) of the pixel sensor.

The invention relates to a back-illuminated image sensor and a preparation method thereof. The back-illuminated image sensor comprises a substrate, and photodiodes and target isolation laminations which are located on a first surface of the substrate, are alternately arranged along a first direction parallel to the first surface and extend towards the substrate, the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures are located right below the target isolation laminations which are arranged in a one-to-one manner; the photodiode comprises a first photosensitive area and a second photosensitive area which are stacked in the second direction away from the substrate. The second photosensitive area is formed in the first photosensitive area through solid phase diffusion; the first photosensitive area comprises at least three photosensitive layers made of different materials; the conductive type of the target isolation lamination layer is opposite to that of the first photosensitive area, and the side wall of the target isolation lamination layer is zigzag. The number of Quantum <-> can be increased through the Photo diodes of different layer structures.