3119 results about "Photodiode" patented technology

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, a grating, photodiodes and target isolation structures, wherein the photodiodes and the target isolation structures are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the target isolation structures over the trench isolation structures are arranged in a one-to-one manner; the photodiode comprises a SiAs laminated layer and a SiAs cover layer which are arranged along a direction away from the substrate, and a SiP layer which penetrates through the SiAs laminated layer along a first direction and a direction towards the substrate; the target isolation structure comprises a protruding part higher than the top surface of the photodiode; the grating and the protruding parts are prepared in the same process step at the same period. Signal crosstalk of the BSI image sensor and unnecessary damage caused by IMP can be avoided, and photoelectric conversion efficiency can be improved.

The invention discloses a self-isolation type image sensing structure, a sensor and a preparation method, and belongs to the field of semiconductors, the self-isolation type image sensing structure is characterized in that a shallow trench isolation structure is exposed after the back surface of a substrate is thinned, then a first semiconductor layer is extended on the back surface of the substrate, and a first isolation structure is prepared in the first semiconductor layer; sequentially depositing a second semiconductor material layer and a metal grating material layer on the first semiconductor layer; sequentially etching the metal grating material layer and the second semiconductor material layer to form a plurality of metal grating structures distributed at intervals and corresponding self-isolation structures; extending a plurality of photosensitive layers in the photosensitive region groove between the adjacent self-isolation structures to form a photosensitive region; and then activating, preparing a filter layer and the like are carried out to obtain a complete back-illuminated image sensor. The self-isolation photodiode is obtained by changing the structural distribution of the photodiode, unexpectedly, the problem that the substrate is damaged by doping is solved, meanwhile, the crosstalk effect is greatly reduced, and the performance of the image sensor is improved.

The invention discloses an external bias pixel structure of a light receiving stage circuit in a dynamic vision sensor pixel. The external bias pixel structure comprises a photodiode, a logarithmic tube, an amplifier tube, a switch tube and a bias tube, the bias tube, the switch tube and the amplifier tube are sequentially connected in series, a source electrode of the bias tube is connected with a power supply, a drain electrode of the bias tube is connected with a drain electrode of the switch tube, a source electrode of the switch tube is connected with a drain electrode of the amplifier tube, and a source electrode of the amplifier tube is grounded; the grid electrode of the bias tube is in signal connection with Vbias, the grid electrode of the switch tube is in signal connection with Vcpr, the source electrode of the switch tube and the drain electrode of the amplifier tube are connected with the grid electrode of the logarithmic tube, the drain electrode of the logarithmic tube is connected with a power supply, the source electrode of the logarithmic tube is connected with the negative electrode of the photodiode, and the positive electrode of the photodiode is grounded. And a grid electrode of the amplifier tube is also connected between the source electrode of the logarithmic tube and the negative electrode of the photodiode.

To provide an image sensor in which the conversion gain (CG) is improved, the arrangement efficiency and size of pixel transistors are increased, and a metal wiring layer is reduced.SOLUTION: An image sensor of the present invention includes a pixel including two photodiodes (PDs) disposed on both sides in a first direction, a deep trench isolation (DTI) structure including an internal DTI structure that separates the two PDs in the pixel from each other and extends in a second direction that is orthogonal to the first direction and an external DTI structure that separates the pixels from each other and extends in the first direction or the second direction, a floating diffusion (FD) region that is disposed between a central part of the external DTI structure extending in the first direction and an edge of the internal DTI structure, and a transmission gate (TG) disposed adjacent to the FD region and disposed at least one by one in the PD. The two PDs in the pixel share the FD region.SELECTED DRAWING: Figure 2

According to an aspect, a detection device includes: an annular housing; a first flexible substrate provided along a shape of the annular housing; a battery provided on the first flexible substrate; a light source provided on the first flexible substrate; a coil to charge the battery provided on the first flexible substrate; and an optical sensor including a second flexible substrate and a plurality of photodiodes provided in a detection area of the second flexible substrate. One end of the second flexible substrate of the optical sensor overlaps one end of the first flexible substrate, and the second flexible substrate is electrically coupled to the first flexible substrate. The coil is disposed in a position that is different from those of the one end of the first flexible substrate and the light source and is between the one end of the first flexible substrate and the light source.

The invention relates to a backside illuminated image sensor and a manufacturing method thereof, and relates to the technical field of integrated circuits. The manufacturing method comprises the steps that a substrate is provided, the substrate comprises a first surface and a second surface which are opposite, a first isolation structure is formed in the substrate, and the first isolation structure extends from the first surface to the second surface; second isolation structures and metal grids are formed, the second isolation structures correspond to the first isolation structures and are arranged on the first surface, the second isolation structures are arranged on the first surface at intervals, and the second isolation structures and the metal grids are sequentially arranged in the direction away from the first surface; forming photodiodes between the second isolation structures, wherein the photodiodes and the second isolation structures are alternately arranged on the first surface; forming a light filtering element on one side, far away from the substrate, of the photodiode, wherein the light filtering element is located between the adjacent metal grids; according to the invention, the crosstalk problem of the backside illuminated image sensor is reduced.

According to an aspect, a detection device includes: an annular housing; a first flexible substrate provided along a shape of the annular housing; a battery provided on the first flexible substrate; a light source provided on the first flexible substrate; and an optical sensor including a second flexible substrate and a plurality of photodiodes provided in a detection area of the second flexible substrate. One end of the second flexible substrate of the optical sensor overlaps one end of the first flexible substrate, and the second flexible substrate is electrically coupled to the first flexible substrate.

A pixel array includes photodiodes and a color filter array. A first fraction of the photodiodes is included in CIS pixels and a second fraction of the photodiodes is included in hybrid CIS / EVS pixels. The photodiodes are arranged into groupings. The color filter array includes first, second, and third color filters arranged in a mosaic pattern over the photodiodes. Each grouping includes a plurality of subgroupings including a first subgrouping disposed under at least one of the first color filters, a second subgrouping disposed under at least one of the second color filters, and a third subgrouping disposed under at least one of the third color filters. Each of the first, second, and third subgroupings includes at least one CIS pixel, and at least one of the first subgrouping of photodiodes further includes at least one hybrid CIS / EVS pixel disposed under at least one of the first color filters.

Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and / or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g., a reflection loss, an absorption loss, a scattering loss, and / or a mode mismatch loss) relative to another transmissive region that is adjacent to the photodiode structure.

The invention discloses a laser channel atmospheric turbulence fading real-time compensation device and method based on a galvanometer system, and the method comprises the steps: enabling an incident light beam to irradiate a transparent PCB integrated with a photodiode array after the incident light beam is focused through a convex lens, obtaining the light intensity distribution of a current light spot through the photodiode array, and transmitting the light intensity distribution to a signal processing unit; the signal processing unit coarsely adjusts the deviation direction of the light spots according to the received light intensity distribution data, and aligns the part with the strongest light intensity in the light spots to the end face of the optical fiber; and based on the roughly adjusted light spot deviation direction, the signal processing unit dynamically adjusts the deflection angle of the galvanometer by using a gradient descent method according to the power measurement value of the receiving coupling module, so that the fine adjustment of the light spot deviation direction is realized, and the receiving coupling power is maximized. The objective of receiving optical power maximization is achieved, optical design, electronic control and algorithm optimization are combined, and atmospheric turbulence compensation with high cost performance is achieved.

The invention discloses a manufacturing method of an image sensor and the image sensor, and relates to the technical field of semiconductor manufacturing, and the manufacturing method comprises the steps: forming a first stacked structure on the surface of a substrate; forming a deep trench isolation structure in the first laminated structure to isolate the first laminated structure to form a plurality of photodiode regions; forming a plurality of doped regions in the photodiode region; wherein the doping elements are diffused from the surface of the photodiode region to the interior of the photodiode region to form a plurality of doping regions, the plurality of doping regions extend from the surface of the photodiode region to the interior of the photodiode region, and the extension depths of different doping regions are different, so that the doping regions with different layer structures are formed.

A pixel circuit includes: a photodiode configured to operate in a photovoltaic mode and to accumulate charges corresponding to an incident light amount; a reset transistor configured to reset the accumulated charges of the photodiode; and a peak hold circuit configured to hold an output corresponding to the accumulated charges of the photodiode, the peak hold circuit including a peak hold transistor connected to an output end of the photodiode, a switching transistor configured to turn on / off an output of the peak hold transistor, and a holding capacitor configured to hold an output of the switching transistor. The peak hold transistor operates in a state where no carrier charge or only one carrier charge is present on a channel.

A pixel circuit includes a pixel array and a color filter. The pixel array includes pixels arranged in rows and columns, and each pixel includes a photodiode configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photodiode to transfer the image charge out from the photodiode. The color filter array includes color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the pixels is coupled to a first readout circuit, and the plurality of pixels includes a first subset of the pixels not coupled to a second readout circuit and a second subset of the pixels coupled to the second readout circuit. Two diagonally arranged pixels are coupled together to share a floating diffusion, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a third semiconductor layer covering a first semiconductor layer and a second semiconductor layer, the third semiconductor layer comprising an embedded part penetrating through the second semiconductor layer; forming a plurality of isolation parts penetrating through the third semiconductor layer, wherein the plurality of isolation parts are located right above the plurality of first semiconductor layers; forming a plurality of target semiconductor columns arranged at intervals along the first direction in the third semiconductor layer; target doping ions are injected into the remaining third semiconductor layer, so that the target semiconductor columns, the second semiconductor layer and the third semiconductor layer jointly form a plurality of photodiodes. The electron concentration of the photosensitive area is at least increased, and the photosensitive performance of the BSI image sensor is improved.

A time-of-flight pixel circuit includes a photodiode configured to generate charge in response to modulated light reflected from an object. First and second transfer transistors are coupled to the photodiode. The first transfer transistor transfers a first portion of charge from the photodiode in response to a first modulation signal and the second transfer transistor transfers a second portion of charge from the photodiode in response to a second modulation signal. The second modulation signal is an inverted first modulation signal. A first floating diffusion is coupled to the first transfer transistor to receive the first portion of charge in response to a first modulation signal. Each one of a first plurality of sample and hold transistors is coupled between a respective one of a first plurality of memory nodes and the first transfer transistor.

According to an aspect, a detection device includes: an annular housing; a first flexible substrate provided along a shape of the annular housing; a battery provided on a first surface of the first flexible substrate; a light source provided in a first area of a second surface of the first flexible substrate opposite the first surface; and an optical sensor that is provided in a second area different from the first area of the second surface of the first flexible substrate and includes a plurality of photodiodes.

The invention discloses an AWG chip automatic test system based on a photodiode array, and the system comprises a light source transmitting module which is used for transmitting laser and finally coupling the laser to an input waveguide of an AWG chip; the six-axis control platform controls the single-mode optical fiber FA to be accurately coupled to the AWG chip by adjusting the position of the single-mode optical fiber FA; the light source detection module comprises a PD array composed of a plurality of photodiodes, and the PD array obtains information of an output waveguide of the AWG chip; data acquired by the upper computer and the data acquisition system are transmitted to the upper computer to be processed and displayed, and by taking a CWDM chip as an example, insertion loss, central wavelength, bandwidth, crosstalk and the like of the chip can be calculated by respectively acquiring optical power of four channels in the chip, so that whether the chip reaches the standard or not is judged. In the process, as the AWG chip is a passive device, input and output waveguides at the two ends of the chip carry out optical transmission in an alignment mode, and if alignment is wrong, large loss is likely to be generated.

The invention relates to the field of optical detection, in particular to a spectrum confocal displacement measuring system and method based on wavelength modulation, and the measuring system comprises a tunable laser, a dichroscope, a dispersion lens, a pinhole, a photodiode and a modulator. The tunable laser is used for outputting laser; the modulator is used for calculating a wavelength modulation function of the tunable laser according to a nonlinear relationship between the wavelength of the dispersion lens and the axial focusing position, and performing nonlinear modulation on the output wavelength of the tunable laser through the wavelength modulation function; the change rate of the output wavelength of the tunable laser adapts to the axial resolution of the dispersion lens; the dichroscope is used for reflecting and transmitting the light beam; the dispersion lens is used for dispersing the light beam and focusing the light beam to different positions of the sample; the photodiode is used for receiving each beam of reflected light reflected by the sample and converting an optical signal into an electric signal; the pinhole is used for suppressing defocused light. According to the invention, the measurement precision and the stability of measurement results can be improved.

Various structures for a hybrid pixel array are disclosed. The hybrid pixel array includes a combination of square photodiode (PD) pixel structures and split PD pixel structures. Square PD pixel structures include one photodiode per pixel unit while split PD pixel structures include two photodiodes per pixel unit. In certain instances, square PD pixel structures are used for green light pixels and split PD pixel structures are used for blue and red light pixels in the hybrid pixel array. The combination of square PD pixel structures and split PD pixel structures provides autofocus capability with higher signal strengths. Various techniques for row addressing and readout from the hybrid pixel array are also disclosed.

A transimpedance amplifier device for an optical receiver disclosed by the present invention comprises a bias circuit, a transimpedance amplifier and an amplification driving circuit which are connected in sequence, the bias circuit comprises an upper bias structure and a lower bias structure, and the upper bias structure and the lower bias structure are both connected with the transimpedance amplifier to generate different bias currents. It is ensured that the photodiode PD1 can be conducted and generate light current when light passes through the photodiode PD1, the transimpedance amplifier is used for converting the current into voltage to be output, and the amplification driving circuit is used for amplifying the voltage. According to the optical receiver circuit, micro current generated by the photodiode can be converted into output voltage in a relatively high output range through the transimpedance amplifier, and compared with a traditional optical receiver circuit, the optical receiver circuit is relatively low in cost in circuit structure and has the advantages of low power consumption and high reliability. The driving capability of the circuit can be improved under the condition that a complex amplifier loop and a photoelectric conversion module are not needed, the output voltage in a high range is output, and the performance and the stability are further enhanced.

The invention relates to the technical field of semiconductor image sensors, in particular to a high-speed TDI image sensor pixel unit and an image sensor, the pixel unit is composed of a polysilicon gate, a buried channel and a photodiode, the active region of the photodiode is trapezoidal, the long bottom edge of the trapezoidal active region is connected with the buried channel, the active region comprises multiple stages of n-type injection regions, and the n-type injection regions are connected with the buried channel. And built-in potentials are sequentially decreased from the buried channel injection region to the short bottom edge of the trapezoidal active region. According to the TDI image sensor pixel unit, the clamping photodiode is additionally arranged on a traditional TDI image sensor pixel unit, and the photodiode adopts a combined design of a trapezoid and a multi-stage n-type injection region, so that the potential is gradually increased towards a polysilicon gate in a stepped manner, the flowing speed of charges to the polysilicon gate is increased, the flowing time is shortened, and on the premise that power consumption is not increased, the photoelectric conversion efficiency is improved. The method can be applied to high-speed scenes. The image sensor is designed based on the pixel units, so that the power consumption can be effectively reduced, the information acquisition speed is improved, and the image aliasing problem is avoided.

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, photodiodes and isolation columns, wherein the photodiodes and the isolation columns are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the photodiode comprises a bottom light sensing area, a middle light sensing area and a top light sensing area which are sequentially stacked in the second direction away from the substrate. The bottom light sensing area comprises at least two light sensing layers which are made of different materials and stacked in the second direction. The middle light sensing area comprises at least two light sensing layers which are arranged along the first direction and are made of different materials; the top light sensing area comprises at least two light sensing layers which are made of different materials and stacked in the second direction. The photoelectric conversion efficiency and the quantum efficiency are improved while substrate damage caused by ion implantation is avoided.

According to an aspect, a detection device includes: a ring-shaped housing; a light source provided in the housing; a first optical sensor provided in the housing so as to be adjacent to one end of the light source in a circumferential direction of the housing; and a second optical sensor provided in the housing so as to be adjacent to the other end of the light source in the circumferential direction of the housing. At least the first optical sensor is an organic photodiode including a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.

The invention relates to a data acquisition and analysis system and method for laser interference measurement, and aims to solve the problem of limited measurement precision caused by asynchronous signal acquisition, imperfect environmental interference compensation and algorithm errors of the existing system. The system comprises a photoelectric conversion unit, a signal conditioning unit, a high-speed synchronous acquisition unit, a real-time processing unit and an error compensation module. The photoelectric conversion unit adopts a four-quadrant PIN photodiode array to receive interference light signals and convert the interference light signals into analog electric signals; the signal conditioning unit performs gain adjustment and bandwidth limitation on the signal; the high-speed synchronous acquisition unit realizes femtosecond-level synchronous acquisition of signals; the real-time processing unit performs phase solution and eliminates harmonic errors based on an improved arc tangent algorithm; and the error compensation module fuses temperature sensor data and accelerometer data to realize thermal drift and vibration compensation.

The invention provides an image sensor and a manufacturing method thereof, and relates to semiconductor manufacturing. The photoelectric sensing area in the image sensor can be formed by a plurality of doped deposition layers. Therefore, ion implantation does not need to be carried out in the preparation process of the photoelectric sensing area, and damage of ion implantation to the substrate is avoided. In addition, the atomic mass of the doping ions of the bottom doped deposition layer in the multiple doped deposition layers is large, a groove is formed in the bottom doped deposition layer, the atomic mass of the doping ions of the top doped deposition layer is relatively small, and the groove formed in the bottom doped deposition layer is filled with the doping ions of the top doped deposition layer. Therefore, the stability of the photoelectric sensing area can be ensured by arranging the doped ions with relatively high atomic mass at the bottom, and meanwhile, the doped deposition layer can be filled with a large amount of doped ions with relatively low atomic mass through the grooves, so that more free electrons are provided, the light current of the photodiode during light sensing is improved, and the photoelectric sensing efficiency is improved. Therefore, the light sensing capability of the image sensor is improved.

A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels each comprising two photodiodes, a floating diffusion coupled between the two photodiodes, and two transfer transistor coupled between the two photodiodes and the floating diffusion. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each pixel is coupled to a first readout circuit. The pixels include a second subset of the pixels coupled to a second readout circuit and a first subset of the pixels not coupled to the second readout circuit. Each pair of pixels arranged in two adjacent rows includes a first pixel included in the second subset of the pixels and a second pixel included in the first subset of the pixels and disposed underneath one of the color filters.

An image sensor includes a first semiconductor chip which extends in first and second directions that intersect each other, and having a pixel part including a plurality of pixel regions; and a second semiconductor chip including a circuit part electrically connected to the pixel part, on the first semiconductor chip. The pixel part includes a photodiode, a floating diffusion node which accumulates photocharges generated by the photodiode, and a first source follower which amplifies and outputs a signal corresponding to a change in potential of the floating diffusion node. The circuit part includes a first pre-charge selection transistor connected between a first node and a second node, a second pre-charge selection transistor connected to the first pre-charge selection transistor, and a pre-charge transistor which pre-charges the second node connected to the first source follower. The plurality of pixel regions share the pre-charge transistor.

The embodiment of the utility model discloses a three-dimensional array of integrated biological photoelectrodes, which comprises a plurality of electrode array layers, and the electrode array layers are laminated and connected along the longitudinal direction; and the electrode array layer is formed by arranging a plurality of integrated biological photoelectrodes in parallel. Integrated biological photoelectrodes with different lengths, LED wavelengths and other characteristics are arranged in multiple dimensions, each integrated biological photoelectrode can be provided with an independent bonding pad set, and during working, the device is inserted into biological brain tissue and immersed in a biological solution, so that the device is formed. And a photodiode is lightened, and a bioelectric signal is collected through a microelectrode array, so that the nerve cells are accurately controlled, and meanwhile, the collection range and the collection density of the nerve signals are effectively improved.

An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance CPIN. The TIA capacitance CTIA may be matched to CPIN. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance CPIN+CTIA; and feedback resistance RF of the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.

The invention discloses an image sensor and a manufacturing method thereof, the image sensor comprises a substrate, a photodiode, a storage node and a floating diffusion region which are arranged in the substrate at intervals, the storage node is arranged between the photodiode and the floating diffusion region, and one side, close to the storage node, of the photodiode is in a step shape; the first transmission grid electrode comprises a vertical grid electrode and a plane grid electrode, the vertical grid electrode is arranged in the substrate between the photodiode and the storage node, and the plane grid electrode is arranged on the vertical grid electrode and part of the substrate; a second transfer gate disposed on the substrate between the storage node and the floating diffusion region; the shallow trench isolation structure is arranged around the first transmission grid electrode, the storage node, the second transmission grid electrode and the floating diffusion region in a surrounding manner; and the shading structure is arranged on the first transmission grid electrode, the storage node and part of the second transmission grid electrode. According to the invention, the pixel transmission sensitivity can be improved, the parasitic light response of the storage node is reduced, and the imaging quality of the image sensor is improved.