2356 results about "Photodiode" patented technology

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, a grating, photodiodes and target isolation structures, wherein the photodiodes and the target isolation structures are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the target isolation structures over the trench isolation structures are arranged in a one-to-one manner; the photodiode comprises a SiAs laminated layer and a SiAs cover layer which are arranged along a direction away from the substrate, and a SiP layer which penetrates through the SiAs laminated layer along a first direction and a direction towards the substrate; the target isolation structure comprises a protruding part higher than the top surface of the photodiode; the grating and the protruding parts are prepared in the same process step at the same period. Signal crosstalk of the BSI image sensor and unnecessary damage caused by IMP can be avoided, and photoelectric conversion efficiency can be improved.

The invention discloses a self-isolation type image sensing structure, a sensor and a preparation method, and belongs to the field of semiconductors, the self-isolation type image sensing structure is characterized in that a shallow trench isolation structure is exposed after the back surface of a substrate is thinned, then a first semiconductor layer is extended on the back surface of the substrate, and a first isolation structure is prepared in the first semiconductor layer; sequentially depositing a second semiconductor material layer and a metal grating material layer on the first semiconductor layer; sequentially etching the metal grating material layer and the second semiconductor material layer to form a plurality of metal grating structures distributed at intervals and corresponding self-isolation structures; extending a plurality of photosensitive layers in the photosensitive region groove between the adjacent self-isolation structures to form a photosensitive region; and then activating, preparing a filter layer and the like are carried out to obtain a complete back-illuminated image sensor. The self-isolation photodiode is obtained by changing the structural distribution of the photodiode, unexpectedly, the problem that the substrate is damaged by doping is solved, meanwhile, the crosstalk effect is greatly reduced, and the performance of the image sensor is improved.

A pixel array includes photodiodes and a color filter array. A first fraction of the photodiodes is included in CIS pixels and a second fraction of the photodiodes is included in hybrid CIS / EVS pixels. The photodiodes are arranged into groupings. The color filter array includes first, second, and third color filters arranged in a mosaic pattern over the photodiodes. Each grouping includes a plurality of subgroupings including a first subgrouping disposed under at least one of the first color filters, a second subgrouping disposed under at least one of the second color filters, and a third subgrouping disposed under at least one of the third color filters. Each of the first, second, and third subgroupings includes at least one CIS pixel, and at least one of the first subgrouping of photodiodes further includes at least one hybrid CIS / EVS pixel disposed under at least one of the first color filters.

Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and / or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g., a reflection loss, an absorption loss, a scattering loss, and / or a mode mismatch loss) relative to another transmissive region that is adjacent to the photodiode structure.

The invention discloses a laser channel atmospheric turbulence fading real-time compensation device and method based on a galvanometer system, and the method comprises the steps: enabling an incident light beam to irradiate a transparent PCB integrated with a photodiode array after the incident light beam is focused through a convex lens, obtaining the light intensity distribution of a current light spot through the photodiode array, and transmitting the light intensity distribution to a signal processing unit; the signal processing unit coarsely adjusts the deviation direction of the light spots according to the received light intensity distribution data, and aligns the part with the strongest light intensity in the light spots to the end face of the optical fiber; and based on the roughly adjusted light spot deviation direction, the signal processing unit dynamically adjusts the deflection angle of the galvanometer by using a gradient descent method according to the power measurement value of the receiving coupling module, so that the fine adjustment of the light spot deviation direction is realized, and the receiving coupling power is maximized. The objective of receiving optical power maximization is achieved, optical design, electronic control and algorithm optimization are combined, and atmospheric turbulence compensation with high cost performance is achieved.

A pixel circuit includes a pixel array and a color filter. The pixel array includes pixels arranged in rows and columns, and each pixel includes a photodiode configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photodiode to transfer the image charge out from the photodiode. The color filter array includes color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the pixels is coupled to a first readout circuit, and the plurality of pixels includes a first subset of the pixels not coupled to a second readout circuit and a second subset of the pixels coupled to the second readout circuit. Two diagonally arranged pixels are coupled together to share a floating diffusion, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a third semiconductor layer covering a first semiconductor layer and a second semiconductor layer, the third semiconductor layer comprising an embedded part penetrating through the second semiconductor layer; forming a plurality of isolation parts penetrating through the third semiconductor layer, wherein the plurality of isolation parts are located right above the plurality of first semiconductor layers; forming a plurality of target semiconductor columns arranged at intervals along the first direction in the third semiconductor layer; target doping ions are injected into the remaining third semiconductor layer, so that the target semiconductor columns, the second semiconductor layer and the third semiconductor layer jointly form a plurality of photodiodes. The electron concentration of the photosensitive area is at least increased, and the photosensitive performance of the BSI image sensor is improved.

A time-of-flight pixel circuit includes a photodiode configured to generate charge in response to modulated light reflected from an object. First and second transfer transistors are coupled to the photodiode. The first transfer transistor transfers a first portion of charge from the photodiode in response to a first modulation signal and the second transfer transistor transfers a second portion of charge from the photodiode in response to a second modulation signal. The second modulation signal is an inverted first modulation signal. A first floating diffusion is coupled to the first transfer transistor to receive the first portion of charge in response to a first modulation signal. Each one of a first plurality of sample and hold transistors is coupled between a respective one of a first plurality of memory nodes and the first transfer transistor.

Various structures for a hybrid pixel array are disclosed. The hybrid pixel array includes a combination of square photodiode (PD) pixel structures and split PD pixel structures. Square PD pixel structures include one photodiode per pixel unit while split PD pixel structures include two photodiodes per pixel unit. In certain instances, square PD pixel structures are used for green light pixels and split PD pixel structures are used for blue and red light pixels in the hybrid pixel array. The combination of square PD pixel structures and split PD pixel structures provides autofocus capability with higher signal strengths. Various techniques for row addressing and readout from the hybrid pixel array are also disclosed.

A transimpedance amplifier device for an optical receiver disclosed by the present invention comprises a bias circuit, a transimpedance amplifier and an amplification driving circuit which are connected in sequence, the bias circuit comprises an upper bias structure and a lower bias structure, and the upper bias structure and the lower bias structure are both connected with the transimpedance amplifier to generate different bias currents. It is ensured that the photodiode PD1 can be conducted and generate light current when light passes through the photodiode PD1, the transimpedance amplifier is used for converting the current into voltage to be output, and the amplification driving circuit is used for amplifying the voltage. According to the optical receiver circuit, micro current generated by the photodiode can be converted into output voltage in a relatively high output range through the transimpedance amplifier, and compared with a traditional optical receiver circuit, the optical receiver circuit is relatively low in cost in circuit structure and has the advantages of low power consumption and high reliability. The driving capability of the circuit can be improved under the condition that a complex amplifier loop and a photoelectric conversion module are not needed, the output voltage in a high range is output, and the performance and the stability are further enhanced.

The invention relates to a data acquisition and analysis system and method for laser interference measurement, and aims to solve the problem of limited measurement precision caused by asynchronous signal acquisition, imperfect environmental interference compensation and algorithm errors of the existing system. The system comprises a photoelectric conversion unit, a signal conditioning unit, a high-speed synchronous acquisition unit, a real-time processing unit and an error compensation module. The photoelectric conversion unit adopts a four-quadrant PIN photodiode array to receive interference light signals and convert the interference light signals into analog electric signals; the signal conditioning unit performs gain adjustment and bandwidth limitation on the signal; the high-speed synchronous acquisition unit realizes femtosecond-level synchronous acquisition of signals; the real-time processing unit performs phase solution and eliminates harmonic errors based on an improved arc tangent algorithm; and the error compensation module fuses temperature sensor data and accelerometer data to realize thermal drift and vibration compensation.

A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels each comprising two photodiodes, a floating diffusion coupled between the two photodiodes, and two transfer transistor coupled between the two photodiodes and the floating diffusion. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each pixel is coupled to a first readout circuit. The pixels include a second subset of the pixels coupled to a second readout circuit and a first subset of the pixels not coupled to the second readout circuit. Each pair of pixels arranged in two adjacent rows includes a first pixel included in the second subset of the pixels and a second pixel included in the first subset of the pixels and disposed underneath one of the color filters.

The invention discloses an image sensor and a manufacturing method thereof, the image sensor comprises a substrate, a photodiode, a storage node and a floating diffusion region which are arranged in the substrate at intervals, the storage node is arranged between the photodiode and the floating diffusion region, and one side, close to the storage node, of the photodiode is in a step shape; the first transmission grid electrode comprises a vertical grid electrode and a plane grid electrode, the vertical grid electrode is arranged in the substrate between the photodiode and the storage node, and the plane grid electrode is arranged on the vertical grid electrode and part of the substrate; a second transfer gate disposed on the substrate between the storage node and the floating diffusion region; the shallow trench isolation structure is arranged around the first transmission grid electrode, the storage node, the second transmission grid electrode and the floating diffusion region in a surrounding manner; and the shading structure is arranged on the first transmission grid electrode, the storage node and part of the second transmission grid electrode. According to the invention, the pixel transmission sensitivity can be improved, the parasitic light response of the storage node is reduced, and the imaging quality of the image sensor is improved.

A Rydberg atom television receiver is disclosed. The receiver comprises a probe laser, a source polarizing beam displacer, a Rydberg atom receiver cell, receiver atoms, a detector polarizing beam displacer, a detector polarizing beam cube, a first photodiode, a second photodiode, a differential amplifier, a display, and a coupling laser. The receiver receives a modulated waveform imprinted on a radiofrequency carrier a displays a graphical representation corresponding to a modulation source.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

An image sensor includes a substrate the substrate including a plurality of unit pixels arranged in a direction parallel to a first direction; a first and second photodiode inside of the substrate in each of the plurality of unit pixels and separated from each other in a second direction, perpendicular to the first direction; and a device isolation film between the plurality of unit pixels. A pair of pixels side-by-side in a third direction, perpendicular to the first and second direction, among the plurality of unit pixels, share a microlens, and at least one of the plurality of unit pixels includes a light shielding film on the substrate. Accordingly, in the image sensor, while maintaining the existing photodiode forming process, the autofocusing function in a vertical direction may be supplemented, and further, performance of the image sensor may be improved.

An image sensor may include an array of imaging pixels arranged in rows and columns. Each imaging pixel may include a photodiode, an overflow capacitor, an overflow transistor that is interposed between the photodiode and the overflow capacitor, a floating diffusion region, a transfer transistor that is interposed between the photodiode and the floating diffusion region, a voltage supply, and a reset transistor that is interposed between the floating diffusion region and the voltage supply. The voltage supply may provide a voltage at a first magnitude that is less than the pinning voltage for a first portion of a reset period and may provide the voltage at a second magnitude that is greater than the pinning voltage for a second portion of the reset period.

The invention relates to a back-illuminated image sensor and a preparation method thereof, and relates to the technical field of integrated circuits, in which a plurality of photodiode structures are distributed at intervals along a first direction parallel to a back surface and penetrate through a P-type epitaxial layer along a second direction close to a substrate; the bottom photosensitive part comprises a first horizontal part extending along a first direction and a first longitudinal protruding part extending to the back surface of the substrate; the middle photosensitive part comprises a second horizontal part extending in the first direction and a second longitudinal protruding part extending to the top face of the first horizontal part. The second longitudinal protruding part is located on the side, away from the first longitudinal protruding part, of the first horizontal part in the first direction. The top photosensitive part comprises a third horizontal part extending in the first direction and a third longitudinal protruding part extending to the top face of the second horizontal part. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance and the integration density of the BSI image sensor are improved.

Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

The embodiment of the invention provides a method and device for detecting the flicker frequency of an ambient light source and electronic equipment, relates to the field of terminals, can detect the flicker frequency of the ambient light source, and is high in detection precision and low in cost. The electronic equipment comprises a light intensity sensing module, an analog-to-digital conversion module and a data processing module, the light intensity sensing module is connected with the analog-to-digital conversion module, and the analog-to-digital conversion module is connected with the data processing module; the light intensity sensing module comprises a photodiode and is used for detecting a light intensity signal of an ambient light source and converting the light intensity signal into an analog voltage signal; the analog-to-digital conversion module is used for converting the analog voltage signal into a digital voltage signal; the analog-to-digital conversion module is an audio chip, and the audio chip is connected with a microphone and / or a loudspeaker; the data processing module is used for calculating the flicker frequency of the ambient light source according to the digital voltage signal.

The invention provides a coaxial packaging laser structure, and belongs to the technical field of lasers. Comprising a tube base, a tube cap is arranged at the upper end of the tube base, pins are arranged on the inner side of the lower end of the tube base, a heat sink is arranged on the rear side of the upper end of the tube base, a laser chip is arranged in the middle of the front end of the heat sink, hold-down modules are arranged on the left side and the right side of the front end of the laser chip, and a photodiode is arranged in the middle of the upper end of the tube base. According to the laser chip clamping device, the laser chip is clamped under the action of the stress of the spring piece through the arranged pressing module, the front end of the pressing module is attached to the chamfer of the laser chip due to the fact that the spring pull rod at the front end is telescopic, clamping acting force is generated while pulling force is generated, and fixing is conducted in front of and on the side faces of the laser chip, the thermistor and the heat sink; under the condition that an existing installation structure is not changed, compared with a traditional mode of only depending on attachment for reinforcement, separation caused by thermal expansion mismatch is not prone to occurring, and using is more reliable.

Various embodiments of the utility model relate to a semiconductor device, the semiconductor device comprises a plurality of photodiode doped regions formed in a substrate and a deep trench isolation (DTI) structure formed in the substrate, the DTI structure separates the photodiode doped regions, and the DTI structure comprises a first filling material defining an air gap therein. The first filling material comprises a top, a side wall and a bottom. The semiconductor device also includes a first isolation layer surrounding and contacting the top, sidewalls, and bottom of the first fill material.

The invention discloses an all-solid-state snapshot full-Stokes parameter measurement and imaging enhancement sensor device. The all-solid-state snapshot full-Stokes parameter measurement and imaging enhancement sensor device comprises a micro-lens array module, a liquid crystal phase modulation module, a polarization wire grating array module and an image sensor module. The micro lens array module is composed of a plurality of micro lenses which are arranged in a two-dimensional mode, and incident light is focused on the photodiode of each pixel. The liquid crystal phase modulation module is composed of two high-speed liquid crystal variable phase delayers, and active phase modulation is carried out on the polarization state of incident light. Polarized light information in four polarization directions can be obtained only through single shooting in the polarization wire grating array module. The image sensor module calculates the full Stokes parametric polarization characteristics of the incident light. According to the invention, full-polarization information measurement of incident light can be realized only through single exposure, and a polarization enhancement mode is switched after measurement is completed, so that the imaging efficiency of the sensor in dark light scenes such as weak contrast target detection is greatly improved.

The invention provides a control system for locking a bias working point of a silicon-based chip of an MZM structure, which comprises the silicon-based chip, two sampling circuits, an MCU control unit, a multi-channel operational amplifier and an upper computer, and is characterized in that the silicon-based chip comprises an MZM modulator, the MZM modulator comprises a modulation arm A, a modulation arm B, a heater, an A-arm photodiode and a B-arm photodiode, a sampling circuit collects voltage and current signals on a driving arm on the MZM modulator for feedback, the voltage and current signals are transmitted to a peripheral MCU control unit and uploaded to an upper computer, and the MCU control unit regulates and controls the voltage or current of a modulation arm A through a multi-channel operational amplifier. The invention further provides a control method of the control system for locking the bias working point of the silicon-based chip of the MZM structure. The occupied space in the high-speed optical module is small, so that the layout of other electric chips is facilitated, and higher circuit reliability is realized; a brand-new and accurate control method is designed.

The invention discloses a non-invasive wearable vascular arteriosclerosis assessment system and method based on multi-mode pulse wave signal fusion, and belongs to the field of vascular function assessment. The system comprises a distributed acquisition front end, a butterfly-shaped flexible substrate, an integrated double-accelerometer, a four-wavelength LED (530nm / 660nm superficial blood vessel measurement), a 810nm / 940nm deep artery measurement device, a double-photodiode, a double-impedance electrode and a pressure sensor. The central integrated control end processes a multi-mode signal and realizes pressure-LED current closed-loop control; the upper computer terminal extracts the multi-modal pulse wave time difference of the limbs and the neck, the local and regional pulse wave conduction velocity and the blood oxygen hemoglobin change parameters induced by the standardized posture, the dimension is reduced to 30 through principal component analysis, then the parameters are input into the random forest regression model, and the vascular elasticity index is output. Signal stability is improved through flexible fitting, single-source limitation is solved through multi-modal fusion, signal quality is guaranteed through closed-loop control, sensitivity is enhanced through dynamic physiological excitation, and accuracy and universality of arteriosclerosis assessment are improved.

An image sensor comprising a photodiode, an inter-layer dielectric layer, and a deep trench isolation structure is described. The photodiode is disposed within a semiconductor substrate having a front side and a backside opposite the front side. The inter-layer dielectric layer is disposed over the front side of the semiconductor substrate such that the front side is disposed between the inter-layer dielectric layer and the backside. The deep trench isolation structure is configured to isolate the photodiode from adjacent photodiodes included in the image sensor. The deep trench isolation structure includes a trench disposed within the inter-layer dielectric layer and the semiconductor substrate and a fill material disposed within the trench. The trench extends through the inter-layer dielectric layer and the front side of the semiconductor substrate towards the backside of the semiconductor substrate.

The present disclosure provides an image sensor and a high dynamic range adaptive imaging method wherein the image sensor comprises: a pixel array comprising a photodiode acquisition circuit arranged in an array and photogenerating an image charge signal in response to incident light, the photodiode acquisition circuit comprising a dual conversion gain transistor and a row selection transistor; the pre-reading module is used for receiving initial sampling of the pixel photoelectric response signal before the reading stage and comparing the initial sampling with a threshold signal to generate a control signal; the reading module is used for driving the photodiode acquisition circuit according to the control signal and only reading the pixel electric signal under the selected path for output; and the synthesis module is used for generating a path label corresponding to the pixel electric signal and synthesizing a picture. According to the invention, the method can achieve the quick pre-reading judgment before the reading stage, thereby determining the optimal signal gain mode for output, effectively improving the frame rate, reducing the power consumption, and achieving the optimization of a dynamic range.

The utility model discloses a background suppression photoelectric sensor realized based on double PD. The background suppression photoelectric sensor comprises an MCU control circuit, an LED drive circuit, an acquisition module, a target object, a differential amplification circuit, a voltage comparison circuit and a self-adaptive output circuit. The acquisition module is used for receiving reflected light signals of a target object and converting the reflected light signals, then the differential amplification circuit amplifies and converts PD signals received by the acquired signals, and then analog quantity signals are converted into pulse signals through the voltage comparison circuit, so that the MCU control circuit can be used for processing logic signals and modulating PWM signals. The LED driving circuit is arranged to drive the LED diode D6 to work; the background suppression photoelectric sensor realized by a photodiode PD1, a photodiode PD2, a differential amplification circuit, a voltage comparison circuit and an MCU control circuit adopts an automatic frequency conversion technology to solve the problem of optical crosstalk among multiple sensors, and is suitable for background suppression photoelectric sensing.

A carbonation device for beverages includes a carbonation tank to receive a beverage to be carbonated and carbon dioxide so as to generate a carbonated beverage, carbonated with the carbon dioxide, and a dispensing device in fluid communication with the carbonation tank to dispense, through a duct, the carbonated beverage to a container for carbonated beverages, the carbonated beverage flowing along the duct in a flow direction.The carbonation device further includes a carbonation sensor associated with the duct and having a radiation source to generate a radiation which strikes the duct along an irradiation direction incident to the flow direction.The carbonation sensor also includes a first photodiode placed on the irradiation direction from a side opposite to the radiation source with respect to the duct, or as an alternative, a second photodiode placed along a diffusion direction substantially orthogonal to the irradiation direction.

The invention discloses a displacement sensor, a galvanometer motor system, an assembling method and a signal processing method, the displacement sensor is connected with a motor shaft and adopts a transmission-type grating sandwich structure, and the transmission-type grating sandwich structure comprises a light source module which is arranged on the upper layer and comprises an aspheric collimating lens capable of generating uniform parallel light beams; the grating code disc is arranged on the middle layer and made of an optical glass substrate, and the grating code disc is fixed on the motor shaft through a code disc tray; the photoelectric receiving module is arranged on the lower layer, the photoelectric receiving module comprises a plurality of groups of orthogonally arranged photodiodes and photoelectric converters, the photodiodes are used for receiving light and shade changes of light stripes and forming optical signals, and the photoelectric converters are used for receiving the optical signals and converting the optical signals into electric signals. According to the invention, the size of the structure can be reduced, the position subdivision precision is improved, the signal processing speed and the anti-interference capability are improved, and thus the use effect of the galvanometer motor system is improved.