1324 results about "Indium" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention provides a surface-modified sulfide electrolyte and a preparation method thereof, and an all-solid-state battery, the surface-modified sulfide electrolyte comprises a sulfide electrolyte and a modification layer coated on the surface of the sulfide electrolyte, the chemical general formula of the modification layer is LiaMbNcXd, 0 < = a < = 3, 0 < = b < = 1, 0 < = c < = 1, 0 < = d < = 6, and 0 < = c < = 1. M is at least one element of magnesium, aluminum, calcium, iron, zirconium, niobium, tantalum, tungsten, gadolinium, yttrium, indium, hafnium, lanthanum and ytterbium, and X is at least one element of oxygen, sulfur, fluorine, chlorine, bromine and iodine. According to the surface-modified sulfide electrolyte, the modification layer with high ionic conductivity and high oxidation potential is coated outside the sulfide electrolyte, so that when the surface-modified sulfide electrolyte is applied to a positive electrode of an all-solid-state battery, the modification layer can improve the oxidation potential of the electrolyte on the premise of not reducing the ionic conductivity of the electrolyte; the effects of improving the interface stability between the positive electrode active material and the sulfide electrolyte and further improving the cycle performance of the battery are achieved.

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The invention discloses a manufacturing method of 925 silver jewelry, which comprises the following steps: S1, preparing alloy components, S2, designing a cast tree structure, S3, casting, and S4, densifying a casting, the alloy components comprise 92.5-93.0% of silver, 1.0-3.0% of platinum, 0.05-0.5% of copper, 1.5-3.5% of zinc, 1.5-3.5% of indium, 0.03-0.3% of tin, 0.05-0.5% of germanium, 0.03-0.3% of rare earth, and 0.003-0.02% of boron. According to the manufacturing method, alloy components are optimized, the casting performance of the alloy components is improved, the casting process is optimized, the feeding capacity of molten metal is improved, shrinkage porosity and air holes are reduced, the initial density of the casting is improved, and subsequent composite treatment is carried out, so that the density from the surface to the shallow surface of the casting is further improved, grains are refined, and the surface roughness is further reduced; and the requirement of high brightness of the jewelry surface is met.

A quantum dot composite configured to emit green light or red light. The quantum dot composite including a polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, the plurality of quantum dots include a semiconductor nanocrystal core comprising indium and phosphorus. As determined by differential scanning calorimetry, the quantum dot composite exhibits an intensity of a peak between about 350° C. to about 450° C. that is about 8 times or more and about 13 times or less relative to an intensity of a peak between about 200° C. and about 300° C. in a thermogravimetric analysis graph.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) manufacturing process etching processes, in particular to a silver etching solution for an OLED manufacturing process as well as a preparation method and application of the silver etching solution. The silver etching liquid comprises nitric acid, phosphoric acid, a buffer agent, a metal ion chelating agent and an ionic liquid inhibitor, the ionic liquid inhibitor comprises 1-butyl-3-methylimidazole phosphate, the metal ion chelating agent is selected from at least one of pyromellitic acid, diethylenetriamine pentaacetic acid and ethylenediamine tetramethylene phosphoric acid, and the buffer agent is selected from at least one of sodium chloride, sodium chloride and sodium chloride. The buffering agent comprises acetic acid, and all the components are prepared according to a specific mass ratio. The etching solution can balance the etching rate of silver and indium tin oxide, avoid silver residues and black spot defects, prolong the service life of the solution, reduce the use of a volatile buffer agent, adapt to the OLED fine manufacturing process, improve the product yield and reduce the production cost, and is suitable for etching of a metal substrate in the OLED manufacturing process.

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

The invention discloses a chromium-doped indium oxide-based high-temperature heat flux sensor and a preparation method thereof, a screen printing technology is adopted, a slurry formula and printing process parameters are optimized, a thermopile structure is accurately formed on a high-temperature-resistant ceramic substrate, and then a thermopile and a thermal resistance layer are subjected to step-by-step high-temperature sintering treatment, so that the chromium-doped indium oxide-based high-temperature heat flux sensor is obtained. And firm combination between the thin film and the substrate and densification of a microstructure are ensured. The finally prepared sensor has excellent high-temperature oxidation resistance and long-term working stability, is stable and reliable in thermoelectric output signal, meets the strict requirements of aerospace, energy power and other fields on high-temperature heat flow measurement, is suitable for heat flow monitoring in high-temperature combustion environments, high-speed pneumatic heating and other scenes, and has wide application prospects. And a reliable test means is provided for design and performance evaluation of the thermal protection system in an extreme environment.

The invention provides a performance prediction method and system for a full-flow process of a copper-indium-gallium-selenium solar cell, and the method comprises the steps: obtaining experimental data covering a complete device structure and a preparation process, removing redundant features through data cleaning, standardization and feature correlation analysis, introducing an SHAP game theory method to analyze a model, and carrying out the optimization of the performance of the whole-flow process of the copper-indium-gallium-selenium solar cell. Quantifying the marginal contribution degree of the process parameters to the photovoltaic performance; and finally, determining a parameter convergence interval of the high-efficiency device by using a parallel coordinate technology, and outputting a performance prediction value. According to the method, the modeling problem of the copper-indium-gallium-selenium solar hybrid heterogeneous data is effectively solved, the prediction result is ensured to conform to the physical law of a device through physical constraint, the trade-off effect among complex process parameters is revealed, clear parameter guidance is provided for efficient battery preparation, and the trial and error cost is greatly reduced.

The present application relates to a kind of phosphine oxy group covalent modification composite adsorption material and its preparation method and purposes, the preparation method includes the following steps: (1) mixing dopamine hydrochloride, phosphine-containing substrate, tris-hydroxymethyl aminomethane hydrochloride and sodium hydroxide in solvent, to obtain mixed solution;(2) the mixed solution obtained in step (1) and solid phase material are mixed, then oscillation reaction is carried out, to obtain solid-liquid mixture;(3) the solid-liquid mixture obtained in step (2) is carried out solid-liquid separation, and the solid phase part obtained is sequentially washed and dried, to obtain phosphine oxy group covalent modification composite adsorption material.The phosphine oxy group covalent modification composite adsorption material provided by the present application has excellent adsorption selectivity and material stability, and can be used for the high-selectivity separation and recovery of rare metals indium and gallium.

The invention relates to a lead-free and halogen-free soldering paste and a preparation process thereof, and belongs to the technical field of soldering paste production, through the combination of nano-silver-loaded carbon nanotubes, organically coated solder alloy powder and soldering flux, the surface tension of the lead-free and halogen-free soldering paste can be reduced by carbon nanotube surface carboxyl in the nano-silver-loaded carbon nanotubes, so that the lead-free and halogen-free soldering paste is obtained. Nano-silver and tin form an Ag3Sn strengthening phase which synergistically promotes wetting and spreading of the solder on a substrate, meanwhile, the carbon nanotubes loaded with the nano-silver are uniformly dispersed in the soldering paste to play a dispersion strengthening role, and the brittleness caused by bismuth segregation is effectively inhibited in cooperation with the grain refinement effect of copper and indium in the solder alloy powder; and the organic coating layer hydrogenated rosin-terpene resin and the soldering flux alcohol ether solvent form a slight dissolution-fusion effect, so that the welding flux alloy powder is prevented from being oxidized, an organic acid active agent can be released to remove a substrate oxidation film, the metallurgical bonding quality of a welding interface is further guaranteed, and the defects of pseudo soldering, cavities and the like are reduced.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

A method may include contacting a hydrocarbon-containing feed with a catalyst in a reactor to form an olefin-containing effluent, then at least partially separating the olefin-containing effluent from the catalyst. Passing the catalyst to a combustor and heating the catalyst by combusting a supplemental fuel. The supplemental fuel includes methane in an amount greater than or equal to 1 mol. %. Passing the catalyst from the combustor to the reactor, such that at least a portion of the catalyst continuously cycles between the reactor and the combustor. The catalyst includes from 0.1 wt. % to 10 wt. % of one or more metals chosen from gallium, indium, thallium or combinations thereof, from 5 ppmw to 1000 ppmw of one or more metals chosen from platinum, palladium, rhodium, iridium, ruthenium, osmium, or combinations thereof, from 100 ppmw to 30000 ppmw of chromium, and at least 85 wt. % support.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The invention relates to the technical field of PVB heat-insulating films, in particular to a PVB heat-insulating film based on indium tin oxide and bronze cesium tungsten compounding and a preparation method thereof.The PVB heat-insulating film is prepared from, by weight, 80-120 parts of PVB resin, 20-50 parts of oily plasticizer, 0.1-2.0 parts of silane coupling agent, 0.1-1.0 part of antioxidant, 0.1-1.0 part of ultraviolet light absorber, 1-5 parts of polyethylene glycol derivative and 1-5 parts of compound dispersion slurry, the weight ratio of the indium tin oxide powder to the bronze cesium tungsten powder in the compound dispersed slurry is (5: 5)-(7: 3). According to the PVB heat-insulating film based on indium tin oxide and cesium tungsten bronze compounding and the preparation method, the prepared PVB heat-insulating film has high visible light transmittance and excellent near-infrared light rejection rate, meanwhile, the Faraday cage effect can be effectively avoided, and the signal shielding problem is avoided.

The invention discloses a silver-gold-palladium-chromium-indium-yttrium alloy and a preparation method and application thereof, and belongs to the technical field of precise materials for semiconductor detection. The alloy comprises the following components in percentage by mass: 15%-20% of Au, 15%-18% of Pd, 8%-12% of Cr, 0.1%-0.3% of In, 0.2%-0.4% of Y and the balance of Ag. According to the preparation method, alloy component design is optimized, and an optimized preparation method is combined, so that a nano-to-micron Pd-Cr dispersed phase and Y element grain boundary segregation composite strengthened structure is formed through a multi-element synergistic strengthening mechanism, and the problems of In low-melting-point volatilization, columnar crystal length-diameter ratio control, high processing wire breakage rate and the like are solved; the alloy material with excellent comprehensive performance such as hardness, resistivity and machinability is obtained, meanwhile, the preparation cost of the alloy material is reduced, and the alloy material has better adaptability to a test probe subsequently matched with a process chip below 5nm.

A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.

The invention discloses a metallurgical solid waste all-component collaborative recovery and high-value utilization method, and belongs to the technical field of metallurgical resource recycling and green metallurgy. According to the method, blast furnace gas sludge, iron-manganese slag and vanadium extraction converter sludge are synergistically blended, and after briquetting and drying, reduction smelting is carried out in an inert atmosphere. Reducing the iron into molten iron; volatile metals such as zinc, indium and gallium are evaporated and enter flue gas, and gallium-indium alloy, crude zinc and residual ash are recovered in a graded manner through a multi-stage condensation system; the slag is subjected to acid leaching to enrich scandium, the leaching liquid is separated to extract vanadium, manganese and scandium, and the leaching slag is used for preparing low-carbon cement. According to the method, all-component collaborative recovery of valuable metals in various metallurgical solid wastes and building material utilization of residual solid wastes are realized, and the method has the advantages of high resource efficiency and environmental friendliness.

The invention belongs to the field of high-purity indium preparation, and provides a method for preparing high-purity indium based on ultrasonic vacuum distillation-electromagnetic pulse zone melting purification, the method combines vacuum distillation and zone melting purification technologies, ultrasonic waves are applied in the vacuum distillation process to assist in removing low-boiling-point impurities such as Cd, Zn and the like, and the purity of the high-purity indium is improved. In the zone melting process, pulse current is applied through an induction coil to assist in removing impurities mainly including Sn, Pb and Fe, and stable preparation of a high-purity indium product with the purity larger than or equal to 99.9995% and the oxygen content smaller than or equal to 2 ppm is achieved by screening and controlling technological conditions. According to the method, the requirement for the purity of the raw material indium is low, and the preparation cost of a high-purity indium product can be reduced.

The invention relates to the technical field of optical functional film manufacturing, in particular to a multi-layer structure of a high-light-transmittance composite brightness enhancement film and a processing method of the multi-layer structure, and the multi-layer structure sequentially comprises a surface hardening layer, a high-refractive-index composite layer, a light diffusion layer, a conductive functional layer, a microstructure layer and a bonding layer from a light incident side to a light emergent side; the surface hardening layer is composed of fluorine-containing modified polyethylene glycol terephthalate (PET), the high-refractive-index composite layer comprises a composite layer of rutile type nano titanium oxide particles and methyl phenyl silicone resin, and the light diffusion layer is a cross-linked layer formed by mixing bisphenol A type epoxy acrylate and trimethylolpropane triacrylate according to the mass ratio of 4.2: 1. The conductive functional layer is an indium tin oxide (ITO) thin film, the microstructure layer is a prism array layer formed by nickel template imprinting, the optical performance of the film is remarkably improved, and the light transmittance of the wavelength of 550 nm reaches 93.5%-93.8% through the optical matching design of the composite structure and is improved by 3-5% compared with similar products.

The invention discloses a double-end photoelectric synapse element based on two-dimensional intrinsic ferroelectricity and TMDs Van der Waals heterojunction as well as a preparation method and application of the double-end photoelectric synapse element, and belongs to the technical field of photoelectric synapses. The element comprises a substrate layer, a channel layer and a packaging layer which are stacked in sequence, the channel layer is formed by stacking a single layer of two-dimensional TMDs and a two-dimensional intrinsic ferroelectric alpha-indium selenide layer; a source electrode is deposited on the TMDs, and a drain electrode is deposited on the alpha-indium selenide layer. The preparation method of the element comprises the following steps: cleaning the substrate layer, growing the single-layer two-dimensional TMDs through a CVD (chemical vapor deposition) method, and stacking the two-dimensional intrinsic ferroelectric alpha-indium selenide layer on the single-layer two-dimensional TMDs to obtain a precursor; the precursor is sequentially subjected to primary annealing, etching and electrode evaporation, and then is subjected to secondary annealing, so that the electrode is obtained. The element adopts photoelectric signal hybrid regulation and control, is used for preparing an artificial brain-like synapse device, and can effectively solve the problems of high power consumption and low dipulse dissimilation index in the prior art.

The invention discloses a method for treating indium raffinate, which comprises the following steps: mixing the indium raffinate with ammonium sulfate, and reacting to obtain a mixed solution; wherein the indium raffinate comprises aluminum ions; cooling the mixed solution to obtain an aluminum ammonium sulfate crystal; adding the aluminum ammonium sulfate crystal into water, and carrying out heating treatment to obtain an aluminum ammonium sulfate solution; adjusting the pH value of the aluminum ammonium sulfate solution to 4.5-5.5 to obtain an aluminum hydroxide precipitate; and calcining the aluminum hydroxide precipitate to obtain aluminum oxide. Therefore, according to the method, the aluminum element in the zinc hydrometallurgy system can be removed, the aluminum element is converted into an aluminum oxide product to be recycled, and good environmental protection benefits and economic benefits are achieved.

The invention relates to the field of photoelectrochemistry, in particular to a photo-anode based on phosphonic acid chelation and photoelectrochemistry activation and a preparation method of the photo-anode. The invention aims to provide a deep-energy-level defect dynamic passivation method based on phosphonic acid chelation and photoelectrochemical synergistic activation, which comprises the following steps: introducing 1-hydroxyethylidene-1, 1-diphosphonic acid (HEDP) molecules (ZISH) on the surface of a zinc-indium-sulfur (ZIS) photo-anode in a low-temperature water bath manner, and carrying out chelation reaction on the molecules and Zn sites on the surface in a photoelectrochemical activation manner, so as to obtain the deep-energy-level defect dynamic passivation method based on phosphonic acid chelation and photoelectrochemical synergistic activation. And a stable Zn-O-P coordination structure is formed. Under the action of photoelectric bias, the structure can reconstruct a Zn-S frame in situ, adjust the coordination number of Zn and convert a deep trap into a shallow energy level state (ZISA), so that interface recombination is effectively inhibited while a high hole injection rate is maintained.

To provide an active metal brazing material which can suppress variation in joining.SOLUTION: An active metal brazing material contains one or two kinds of Ti component particles, CuSn alloy particles and CuIn alloy particles, wherein the Ti component particles are composed of one or more kinds of Ti particles and Ti hydride particles, the CuSn alloy particles are composed of Cu and Sn, when the total of Cu and Sn is 100 pts.mass, Cu is 30 pts.mass or more and 80 pts.mass or less, and Sn is 20 pts.mass or more and 70 pts.mass or less, the CuIn alloy particles are composed of Cu and In, and when the total of Cu and In is 100 pts.mass, Cu is 30 pts.mass or more and 80 pts.mass or less, and In is 20 pts.mass or more and 70 pts.mass or less.SELECTED DRAWING: Figure 1

The invention relates to the technical field of semiconductors, in particular to an InGaAs / InP heterogeneous material epitaxial growth method, which comprises the following steps of: opening a phosphorane source and a trimethyl indium source to grow a first InP epitaxial layer on a preset substrate; turning off the trimethyl indium source, starting timing, and turning off the phosphine source if the timing duration reaches a first preset duration; opening an arsine source, a trimethyl indium source and a trimethyl gallium source to grow an InGaAs epitaxial layer on the first InP epitaxial layer at a growth rate as a first rate; the flow of the arsine source, the flow of the trimethyl indium source and the flow of the trimethyl gallium source are reduced, the InGaAs epitaxial layer continues to grow, the growth rate is a second rate, and the first rate is larger than the second rate; according to the method, the growth of the InGaAs epitaxial layer can be well realized on the first InP epitaxial layer.

The utility model discloses a pressing device for a powder sample and a high-purity indium sheet of a glow discharge mass spectrometer, and belongs to the field of glow discharge mass spectrometry in chemical component analysis. The device comprises an external supporting and protecting system, an internal tabletting system and upper and lower pressing dies. The external supporting and protecting system comprises a touch screen, a protective cover, a safety grating, a control box and the like. The internal tabletting system is composed of an equipment base, a fixed stand column, a movable table, an electric push cylinder, a pressure sensor and the like, and the movable table is driven by the electric push cylinder to drive a lower pressing die to move upwards to be matched with a fixed upper pressing die to complete pressing. The device adopts replaceable upper and lower pressing dies and a sample pressing ring, and meets the preparation requirements of samples with different sizes. The device solves the problems that a powder sample is difficult to compact and the thickness of the prepared indium sheet is not uniform, the pressing parameters are controlled in a programmed manner, the prepared sample can be directly tested without demolding, the integrity of the sample and the test accuracy are effectively ensured, the operation is safe, the efficiency is high, and the economical efficiency is good.

The invention discloses an APD epitaxial wafer breakdown voltage testing method, which comprises the following steps of: (1) selectively corroding an APD epitaxial wafer, and ensuring that an uncorroded layer is a to-be-tested epitaxial layer (the upper surface is a P-type semiconductor region) and a corroded layer is a residual layer (the upper surface is an N-type semiconductor region); (2) dotting indium in the P-type semiconductor region to form an upper electrode, and dotting indium in the N-type semiconductor region to form a lower electrode; (3) connecting a positive electrode probe of a parameter analyzer with a lower electrode, connecting a negative electrode probe with an upper electrode, gradually applying reverse bias voltage from zero, and monitoring and recording a reverse bias voltage value, namely breakdown voltage Vbr, in real time when the current is subjected to avalanche increase; and (4) carrying out statistical analysis on all the breakdown voltage values on the same APD epitaxial wafer to obtain a final breakdown voltage value. The method effectively overcomes the problems of large test result deviation, low accuracy, long period and high cost in the traditional technology, can quickly evaluate the quality of the epitaxial wafer material, and is mainly used for process monitoring and material screening.