2456 results about "Indium" patented technology

The invention discloses an alkaline battery capable of improving low-temperature discharge performance and a preparation method thereof, and the preparation method comprises the following steps: S1, preparing a positive electrode ring: preparing a positive electrode material from metal-doped composite manganese dioxide, an adhesive and a potassium hydroxide solution; s2, preparing negative electrode zinc paste, mixing and ball-milling nano zinc powder, indium powder and gallium powder into alloyed zinc powder, adding a composite conductive additive, a composite binder and a low-temperature-resistant additive, and stirring and dispersing to form the negative electrode zinc paste; s3, sleeving the positive electrode ring into the steel shell, inserting a diaphragm and injecting electrolyte; and S4, injecting negative electrode zinc paste, and packaging to obtain a finished product. According to the negative electrode zinc paste, the zinc utilization rate can be increased through nano zinc powder alloying, meanwhile, the freezing point is reduced through the low-temperature-resistant additive, and the reaction efficiency and fluidity of the negative electrode zinc paste at the low temperature are improved; ethylene glycol in the electrolyte is combined with nano zirconium dioxide, so that the stability and the ion migration capability can be improved, the discharge performance of the alkaline battery under a low-temperature working condition is improved, and the service life of the alkaline battery under the low-temperature working condition is prolonged.

The invention discloses a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, a columnar or halfpace-shaped table surface is formed on the surface of a silicon substrate, and then an AlN buffer layer, an AlGaN stress modulation layer, an n-type GaN layer, an InGaN / GaN composite quantum well layer and a p-type conductive layer sequentially extend on the table surface of the silicon substrate to form a miniature light-emitting diode table surface; through stress release of the side wall of the mesa and stress modulation of the AlGaN layer, tensile stress distribution which is gradually reduced from the center of the mesa to the outer ring is formed in the n-type GaN layer, so that indium component distribution in the InGaN / GaN composite quantum well layer is regulated and controlled, and the micro light-emitting diode mesa covering three primary color wavebands of red, green and blue is formed. According to the chip structure disclosed by the invention, the red, green and blue three-primary-color sub-pixels are integrated, and the difficulty of a mass transfer process of the full-color micro light-emitting diode display chip is reduced. According to the invention, the preparation of the red, green and blue three-primary-color sub-pixels can be completed only by implementing an epitaxial process once, and the process flow is simplified.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention provides a surface-modified sulfide electrolyte and a preparation method thereof, and an all-solid-state battery, the surface-modified sulfide electrolyte comprises a sulfide electrolyte and a modification layer coated on the surface of the sulfide electrolyte, the chemical general formula of the modification layer is LiaMbNcXd, 0 < = a < = 3, 0 < = b < = 1, 0 < = c < = 1, 0 < = d < = 6, and 0 < = c < = 1. M is at least one element of magnesium, aluminum, calcium, iron, zirconium, niobium, tantalum, tungsten, gadolinium, yttrium, indium, hafnium, lanthanum and ytterbium, and X is at least one element of oxygen, sulfur, fluorine, chlorine, bromine and iodine. According to the surface-modified sulfide electrolyte, the modification layer with high ionic conductivity and high oxidation potential is coated outside the sulfide electrolyte, so that when the surface-modified sulfide electrolyte is applied to a positive electrode of an all-solid-state battery, the modification layer can improve the oxidation potential of the electrolyte on the premise of not reducing the ionic conductivity of the electrolyte; the effects of improving the interface stability between the positive electrode active material and the sulfide electrolyte and further improving the cycle performance of the battery are achieved.

The invention provides an optimized II-type superlattice infrared detector chip bottom filling method, a preparation method and an infrared detector, and belongs to the field of infrared detectors. The problem that the performance of an infrared detector is affected due to the fact that the filling glue filled in an existing bottom filling process is prone to generating holes and finally causes defects during imaging of an infrared focal plane detector chip is solved. The method comprises the following steps that a dielectric layer is deposited on the surface of an epitaxial material after table top etching is completed, and the height of the dielectric layer is larger than the table top etching depth; after the dielectric layer is deposited, the surface of the dielectric layer is polished to be flat; opening holes in the dielectric layer on the surface of the table board; preparing an indium column in the opening of the dielectric layer, and then performing flip-chip bonding interconnection on the indium column at the epitaxial material end and the indium column on the readout circuit; filling bottom filling glue between the dielectric layer and the reading circuit after the reverse welding interconnection, and then curing the filling glue at high temperature; the invention is applied to the type-II superlattice infrared detector.

Provided is a flux that can suppress the generation of voids when an indium alloy sheet is used to perform a continuous reflow under different temperature conditions. The present invention employs a flux that contains a rosin ester, an organic acid (A), and a solvent (S). The organic acid (A) includes a dimer acid (A1) that demonstrates a weight reduction rate of not more than 1 mass % in a thermogravimetric analysis in which the dimer acid is heated up to 260° C. at a temperature rising rate of 10° C. / min. The solvent (S) includes a solvent (S1) that demonstrates the weight reduction rate of at least 99 mass % in a thermogravimetric analysis in which the solvent (S1) is heated up to 150° C. at a temperature rising rate of 6° C. / min.

The invention discloses a layered ternary selenide, a layered ternary selenide single crystal material and a preparation method of the layered ternary selenide single crystal material, and belongs to the technical field of crystal materials. The chemical formula of the layered ternary selenide is In2Ge2Se6, indium powder, germanium powder and selenium powder in a specific ratio are adopted as raw materials, synthesis of the layered ternary selenide In2Ge2Se6 single-phase material is achieved through the processes of high-temperature melting, heat preservation in a specific temperature interval and quenching, and the material has a narrow band gap and low heat conductivity and can be used for preparing the high-temperature-resistant layered ternary selenide In2Ge2Se6 single-phase material. And the thin-layer nanosheet single crystal material with the millimeter-level area can be prepared by a mechanical stripping method, and can be applied to the fields of semiconductor photoelectric devices, solar cells, thermoelectric devices and the like.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention belongs to the field of resource regeneration, and particularly relates to a method for separating and recycling copper, indium, gallium and selenium from a waste solar thin film battery. According to the method, the waste solar thin film cells are subjected to oxidizing roasting, deep eutectic leaching and extraction and reverse extraction, and high-quality conversion and purification of all valuable elements in the waste solar thin film cells to oxides of the valuable elements are achieved. According to the method, the process route is simple, high-selectivity extraction of indium is achieved through the synergistic effect of the deep eutectic solvent and P204, and meanwhile effective recovery of valuable elements such as copper and selenium is achieved. The recovered and prepared oxide can be widely applied to strategic emerging industries such as semiconductors, photovoltaics, aerospace, military and the like.

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The invention provides an automatic indium removal device and method for a target material. The automatic indium removal device for the target material comprises a rack, a target material clamping module, an indium removal liquid supply module, an ultrasonic cleaning module, a mechanical scrubbing module, a flushing module, a drying module and a control module. The target material clamping module, the ultrasonic cleaning module, the mechanical scrubbing module, the flushing module and the drying module are all arranged on the rack; the indium removal liquid supply module is connected with the ultrasonic cleaning module; the target clamping module, the indium removal liquid supply module, the ultrasonic cleaning module, the mechanical scrubbing module, the flushing module and the drying module are all connected with the control module. According to the method, automatic and efficient removal of indium residues on the surface of the target material is achieved, cleaning dead corners are avoided, damage to the surface of the target material is avoided, and the method has wide market application prospects.

The invention provides a flexible electromagnetic shielding film and a preparation method thereof. The preparation method comprises the following steps: mixing metal gallium and metal indium in a preset proportion to prepare a gallium-indium alloy; the preparation method comprises the following steps: putting a preset mass of gallium-indium alloy into an isopropanol solution, and treating through an ultrasonic cell disruption system to obtain a liquid metal particle suspension; stirring magnetic functional nanoparticles, an electrostatic spinning high-molecular elastomer and a solvent at normal temperature for a preset time to obtain an electrostatic spinning homogeneous solution; treating the electrostatic spinning homogeneous solution by adopting an electrostatic spinning process to obtain a magnetic nanofiber membrane; and spraying the liquid metal particle suspension onto the magnetic nanofiber membrane by adopting an electrostatic spraying process to obtain the flexible electromagnetic shielding film. According to the flexible electromagnetic shielding film and the preparation method thereof, the problem that the stability of an existing shielding material is reduced under the stretching effect can be solved.

The invention relates to a compound selenium-indium-cesium and a selenium-indium-cesium infrared nonlinear optical crystal as well as a preparation method and application thereof. The molecular formula of the compound is CsIn5Se8, the molecular weight is 1338.69, the molecular formula of the crystal is CsIn5Se8, the molecular weight is 1338.69, the structure has an asymmetric center and belongs to a triclinic system, the space group is P1, and the cell parameters are as follows: a is 9.1506 (3), b is 9.1793 (3), c is 11.2778 (3), alpha is 89.9560 (10) degrees, beta is 72.0140 (10) degrees, gamma is 72.0340 (10) degrees, Z is 2, and the volume is 852.38 (5) 3. The crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method, a Bridgman-Stockbarger method or a fluxing agent method. The obtained selenium-indium-cesium infrared nonlinear optical crystal has the advantages of large nonlinear optical response, good crystal growth habit, good mechanical property, difficulty in fragmentation and deliquescence, easiness in processing and storage and the like, and can be used for manufacturing infrared nonlinear optical devices; the method has important application in the fields of photoelectric countermeasure, spectrum technology, laser communication, remote sensing distance measurement and the like.

The invention belongs to the technical field of new materials, and discloses a method for preparing indium cerium oxide powder based on an electrochemical method, which comprises the following steps: by taking indium cerium alloy as an anode and an inert electrode as a cathode, carrying out electrolytic reaction in an alkaline electrolyte to generate an indium cerium hydroxide precipitate; the hydroxide precipitate is pyrolyzed after being washed, and indium cerium oxide powder is generated. According to the method, an electrolytic method is adopted for preparing mud of indium cerium hydroxide, the grain size of the mud is very small, in the precipitation reaction, the indium cerium hydroxide is evenly mixed, then pyrolysis is conducted, and the indium cerium oxide powder with good uniformity can be obtained. Meanwhile, the invention further provides the cerium indium oxide powder, the target material and the transparent conductive oxide film which are prepared on the basis of the method.

The invention provides an electrochemical device and an electronic device, the electrochemical device comprises a positive pole piece, a negative pole piece and a diaphragm, a functional layer is arranged between the positive pole piece and the diaphragm, the functional layer comprises porous aerogel and a phase change heat absorption material, and the heat conductivity coefficient of the porous aerogel is 0.01 W / (m.k)-0.05 W / (m.k). The porous aerogel comprises at least one of silica aerogel, metal oxide aerogel, polymer aerogel and carbon aerogel; the phase change heat absorption material comprises at least one of gallium alloy, indium tin alloy, paraffin, salt hydrate or fatty acid; the thickness of the functional layer is 1-5 [mu] m. Based on the total mass of the functional layer, the total mass percentage of the phase change heat absorption material and the porous aerogel is 80%-98%. The characteristics are met by regulating and controlling the types of the functional layer and the content of each component, and the design of the functional layer can reduce the temperature rise rate of the positive pole piece while improving the heat dissipation performance of the functional layer, so that the thermal stability safety performance and the crushing-resistant safety performance of the electrochemical device are improved.

The invention discloses a method for adjusting a TS-1 molecular sieve through a plasma treatment technology and application, and relates to the technical field of TS-1 molecular sieve treatment. The method comprises the following steps: S1, preprocessing a TS-1 sample; s2, selecting treatment gas, and presetting treatment conditions; s3, plasma treatment equipment is selected, and the pretreated TS-1 sample is laid according to a certain thickness; s4, processing according to a preset processing condition; and S5, post-processing and testing. The invention discloses a method for adjusting a TS-1 molecular sieve by a plasma treatment technology and application of the TS-1 molecular sieve, and the treated modified TS-1 molecular sieve has advantages in a Beckmann rearrangement reaction compared with a parent conversion rate and selectivity; loaded metals such as copper, cobalt and iron are used for a carbon dioxide and hydrogen reduction reaction, and compared with a matrix, the conversion rate and methanol selectivity are higher; the supported metals such as copper, cobalt, indium, platinum and palladium are used for photocatalytic reaction of carbon dioxide and water, and compared with a parent, the conversion rate and alcohol selectivity are higher.

The invention discloses a manufacturing method of 925 silver jewelry, which comprises the following steps: S1, preparing alloy components, S2, designing a cast tree structure, S3, casting, and S4, densifying a casting, the alloy components comprise 92.5-93.0% of silver, 1.0-3.0% of platinum, 0.05-0.5% of copper, 1.5-3.5% of zinc, 1.5-3.5% of indium, 0.03-0.3% of tin, 0.05-0.5% of germanium, 0.03-0.3% of rare earth, and 0.003-0.02% of boron. According to the manufacturing method, alloy components are optimized, the casting performance of the alloy components is improved, the casting process is optimized, the feeding capacity of molten metal is improved, shrinkage porosity and air holes are reduced, the initial density of the casting is improved, and subsequent composite treatment is carried out, so that the density from the surface to the shallow surface of the casting is further improved, grains are refined, and the surface roughness is further reduced; and the requirement of high brightness of the jewelry surface is met.

A quantum dot composite configured to emit green light or red light. The quantum dot composite including a polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, the plurality of quantum dots include a semiconductor nanocrystal core comprising indium and phosphorus. As determined by differential scanning calorimetry, the quantum dot composite exhibits an intensity of a peak between about 350° C. to about 450° C. that is about 8 times or more and about 13 times or less relative to an intensity of a peak between about 200° C. and about 300° C. in a thermogravimetric analysis graph.

A beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride layer, a u-type gallium nitride layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, the p-type electrode is arranged on the p-type gallium nitride layer, and the n-type electrode is arranged on the edge of the n-type gallium nitride layer. A nitride material on a silicon substrate is used for preparing a micro-beam stress sensitive area LD by utilizing photoetching and ICP (Inductively Coupled Plasma) etching processes for emitting light, and after electrification, the laser LD is obtained in the stress sensitive area of the beam. Under the power-on condition, before and after acceleration loading, due to the fact that quantum limits the stark effect, the frequency wavelength of laser changes, and the magnitude of the acceleration can be sensed through difference frequency.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The invention discloses a sulfide solid electrolyte, a preparation method thereof and an all-solid-state battery. The sulfide solid electrolyte comprises Li, P, S, halogen and a soft acid element, and further comprises a sulfydryl group; the soft acid element comprises at least one of titanium, erbium, bismuth, tin, cadmium, iridium, osmium, indium or antimony. The sulfide solid electrolyte provided by the invention has high ionic conductivity, low sensitivity to water and good air stability.

The invention discloses a solid-state electrolyte and a solid-state lithium metal battery. A preparation method of the solid-state electrolyte comprises the following steps: preparing a Li1. 3Al0. 3Ti1. 7( PO4) (LATP) solid-state electrolyte by adopting a solid-phase sintering method; the preparation method comprises the following steps: dissolving InCl3 and polyacrylic acid (PAA) in isopropanol to form a colorless precursor solution; dripping the solution on the surface of the LATP solid electrolyte and coating by using a spin coater; and the coated and dried LATP is put into a tubular furnace to be sintered, and the In2O3 coated LATP is obtained. Through in-situ electrochemical reaction of indium oxide and lithium metal, an interface layer composed of a Li2O phase and a LixIn alloy is constructed. Wherein the Li2O phase has relatively low lithium ion migration energy barrier and electronic insulation capability; the LixIn alloy can improve the ion diffusion coefficient of the lithium side, and has very high affinity to lithium metal and LATP. According to the Li2O / LixIn interface layer prepared by the preparation method disclosed by the invention, tight contact between lithium metal and LATP is maintained, side reaction is avoided, interface ion transmission kinetics is improved, and uniform dendrite-free lithium deposition is realized.

A sensor comprising one or more metal oxides as sensor material is used to detect pathogen-derived VOCs, such as those released from an infected wound. The metal oxides can comprise one or more metal elements selected from aluminum, antimony, bismuth, boron, cerium, chromium, cobalt, copper, gold, indium, iridium, iron, lanthanum, lead, manganese, molybdenum, nickel, niobium, osmium, palladium, platinum, rhodium, ruthenium, selenium, silicon, silver, tantalum, tellurium, terbium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium. The sensor device can have one or more sensors that detect and record various VOCs indicative of the presence of pathogens, which are associated with mortality and / or infection.

The transparent conducting film comprises a base material layer, a first resin layer, a base layer and a composite conducting layer which are sequentially arranged in a stacked mode, and the composite conducting layer comprises a first ITO conducting layer and a second ITO conducting layer arranged on the face, away from the base layer, of the first ITO conducting layer. The mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the first ITO conducting layer is 90: 10, and the mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the second ITO conducting layer is 93: 7; the first ITO conducting layer and the second ITO conducting layer are both prepared through a magnetron sputtering process, the bombardment gas during magnetron sputtering is krypton, and the direct-current sputtering voltage is 350-400 v. The transparent conductive film provided by the invention has good conductivity and light transmission, and is low in cost.

To provide a Hall element and a current sensor in each of which high accuracy and high sensitivity can be made compatible with each other even when a high magnetic field is applied to the Hall element and the current sensor, the Hall element and the current sensor consuming low power and being suppressed in reliability variation.SOLUTION: The Hall element comprises a substrate 11 including gallium arsenide, an active layer 12 including indium arsenide, formed on the substrate, having a film thickness of 0.63 μm or more and less than 1.45 μm, and an inactive layer 13 formed on the active layer, having a film thickness of 3 nm or more and less than 100 nm. The film thickness ratio of the inactive layer to the active layer is 0.005 or more and less than 0.067. This enables the provision of the Hall element and a current sensor which can achieve both high precision and high sensitivity even under high magnetic fields, have low power consumption, and suppress reliability variations.SELECTED DRAWING: Figure 1

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

To provide a lustrous coating composition by which a coating film having excellent lustrous appearance and high millimeter wave transmittance can be formed.SOLUTION: A lustrous coating composition is provided, which contains (A) indium particles, (B) a surface conditioning agent, (C) a pigment dispersing agent, (D) a viscosity adjusting agent, and (E) water, and has a solid content of 0.1 to 15 mass%, wherein the surface conditioning agent (B) includes a silicone-based surface conditioning agent, and wherein the pigment dispersing agent (C) includes a compound containing a phosphate group.SELECTED DRAWING: None

An indium phosphide polycrystal high-pressure synthetic furnace relates to the technical field of semiconductor materials and comprises a furnace body, a quartz tube is arranged in the furnace body, a first quartz boat for containing red phosphorus is arranged at one end in the quartz tube, and a second quartz boat for containing indium is arranged at the other end in the quartz tube. A reaction transition device is arranged in the quartz tube between the first quartz boat and the second quartz boat, the reaction transition device comprises an outer tube, the outer tube is in close fit with the quartz tube, small-caliber passing openings are reserved in the two ends of the outer tube, separation blades which are uniformly distributed at intervals are arranged on the inner side of the outer tube, and a notch is reserved between each separation blade and the outer tube; and the phase angles of the gaps of the adjacent separation blades differ by 180 degrees. The reaction transition device provided by the utility model can effectively control the pressure change in the quartz tube and the synthesis process, and prevents furnace explosion and the conditions of rich indium, holes and the like caused by insufficient reaction in the synthesis process. Compared with a Bridgman method, the synthesis quality of the indium phosphide polycrystal is greatly improved, and a reliable foundation is laid for subsequent single crystal growth.

The invention provides a composite sensing skin material suitable for an automobile collision dummy. The composite sensing skin material comprises the following components: a dummy skin material, graphene and a gallium-indium alloy. By adding the graphene and the gallium-indium alloy, the resistance value of the dummy skin material is greatly reduced, and the composite sensing skin material has a piezoresistive effect. When the material is prepared into a dummy, in the process of automobile collision performance testing, effective detection of dummy damage is achieved through the piezoresistive effect, and more reliable data support is provided for automobile safety assessment.