14 results about "Chalcogen" patented technology

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

The application provides a metal-loaded transition metal oxide-transition metal chalcogenide composite material and a preparation method and application thereof, a transition metal chalcogenide nanoshell is wrapped on the surface of a transition metal oxide nanoparticle to form a core-shell structure, and metal microparticles are loaded on the surface of the transition metal chalcogenide nanoshell, the metal microparticles are single atoms, nanoclusters or nanocrystals. The composite material has double active sites of metal and chalcogen vacancies, and the nanoshell and the metal microparticles are closely combined at a molecular scale, so that the core-shell structure composite material has lower overpotential, smaller Tafel slope and impedance, larger surface active area and better durability when used as an electrocatalyst for electrocatalytic HER. The application solves the problem that pH restricts electrocatalytic HER of a transition metal chalcogenide, provides an atomic-level design strategy for preparing a high-efficiency full-pH electrocatalyst, and has important significance for promoting sustainable hydrogen production by water electrolysis.

Methods of assessing an energy storage device include providing material for a metal-chalcogen battery, washing the metal anode in a first organic solvent to form a polychalcogenide free metal anode upon which gas chromatography is performed on the polychalcogenide free metal anode to quantify the amount of M0, soaking the chalcogen cathode and the remainder of the metal- chalcogen battery in the organic solvent used to wash the metal anode to form a first solution comprising methylated polychalcogenide and any soluble chalcogen, removing any remaining chalcogen cathode from the first solution, dissolving the remaining chalcogen cathode in a second organic solvent to form a chalcogen containing second solution, performing high performance liquid chromatography -ultraviolet on the first solution and the second solution, separately, and performing battery failure analysis based thereon. The battery failure analysis may be completed using a high-performance liquid chromatography -ultraviolet spectroscopy and gas chromatography sequential characterization (HUGS) computer implemented method.

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes a inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

The application provides a novel chalcogenide compound and a preparation method and application thereof, and the chemical general formula is M 3Bi4 Q 9, wherein M one or two selected from metals Pd and Pt, Q one or two or more combinations of chalcogen elements S, Se and Te. The series of materials belong to the trigonal system, R -3 space group, with a three-dimensional extended crystal structure, and are a novel thermoelectric material. In the structure, M 6 Q 12 ] 12‑ The "hard clusters" are dispersed in Bi- Q The "soft lattice" forms a unique crystal structure of "soft in hard", which has good thermoelectric performance on the basis of ensuring unobstructed electric transport characteristics. Through proper carrier doping, excellent thermoelectric performance can be achieved, and the material is expected to be used in waste heat recovery, thermoelectric refrigeration, thermoelectric power generation and other thermoelectric conversion related fields.

A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.

The surfaces of epitaxial source and drain regions of NMOS (n-type metal-oxide-semiconductor) transistors are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization-energy n-type dopants (e.g., phosphorus, arsenic, antimony) on free electron concentrations due to Fermi-level pinning. The chalcogen can be introduced into the source and drain regions by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition (CVD) processes in which a chalcogen precursor flows over the source and drain regions after its formation. In some embodiments, the CVD process may involve silicon and chalcogen precursors flowing over the surface of the source and drain regions to form a thin layer of silicon heavily doped with a chalcogen.

The surfaces of NMOS (n-type metal-oxide-semiconductor) transistor epitaxial source and drain regions are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization energy n-type dopants (e.g., phosphorous, arsenic, antimony) to free-electron concentrations due to Fermi-level pinning. The chalcogen can be introduced to the source or drain region surfaces by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition processes in which a chalcogen precursor flows over the source and drain regions after they are formed. In some embodiments, the chemical vapor deposition process can comprise silicon and chalcogen precursors flowing over the source and drain region surfaces to form a thin layer of silicon highly doped with a chalcogen.

The present application relates to a semiconductor nanoparticle containing an AgCu chalcogenide represented by the following formula composed of Ag, Cu, and a chalcogen element (Ch). In the present application, it is necessary to contain Te as the chalcogen element. By applying Te, which is larger in mass among chalcogen elements, the photoresponsivity shifts to the long wavelength side. The semiconductor nanoparticle according to the present application contains 90 atomic% or more of the AgCu chalcogenide, and the absorption edge wavelength on the long wavelength side of the absorption spectrum becomes 1200 nm or more. In the formula, Ch is a chalcogen element. x, y, z are the atomic numbers of Ag, Cu, and the chalcogen element, and 0.2 ≤ z / (x+y) ≤ 1. In addition, 1.0 ≤ x / y ≤ 10.0.

The application discloses a synthesis method of a chalcogen hetero-bowl-shaped molecule graphene, which comprises the following steps: taking cheap and easily obtained 2-bromo-5-chloroacetophenone as raw material, obtaining a trimer product thereof under the catalysis of trifluoromethanesulfonic acid, then introducing sulfur or selenium atoms through Suzuki coupling, Friedel-Crafts acylation and Scholl reaction, and finally obtaining the chalcogen hetero-bowl-shaped molecule graphene. The method has the advantages of short synthesis steps, mild reaction conditions, simple operation and the like, and most importantly, the sulfur or selenium atoms are introduced without the previous palladium catalysis, but in the case of metal-free catalysis, and the yield is high. The compound shows excellent electrical properties and has great application value in organic light-emitting diodes and semiconductor materials.

This invention provides a high-entropy alloy composite that matches the d-p energy levels of chalcogenide selenium-based cathode materials, wherein the high-entropy alloy in the high-entropy alloy composite is Fe. a Co b Ni c Cu d Cr e Where 0.9≤a≤1.1, 0.9≤b≤1.1, 0.9≤c≤1.1, 0.9≤d≤1.1, and 0.9≤e≤1.1, the chalcogenide selenium-based cathode material is Se. x S y Where x is 0 < x ≤ 8 and y is 0 ≤ y ≤ 8; the d-p energy level difference t between the high-entropy alloy and the chalcogenide selenium-based cathode material is 0.1 ≤ t ≤ 0.5. This invention effectively accelerates the charge transfer process at the conductive agent / cathode / electrolyte interface and significantly improves the cathode reaction kinetics by introducing the high-entropy alloy composite. It provides a universal design strategy for improving the performance of next-generation all-solid-state batteries.

A vapor-deposition system is provided including one or more precursor chambers configured to deliver precursor material to a plurality of crucibles under vacuum conditions. Each crucible is independently heated to a controlled temperature to generate a vaporized precursor stream that is conveyed through a corresponding transfer tube and manifold to a nozzle array positioned above a substrate. Certain embodiments employ a single precursor chamber and multiple crucibles connected through a distribution assembly, while other embodiments include multiple manifolds arranged in parallel above the substrate. The system enables coordinated co-deposition of metallic, chalcogen, and dopant materials to form composition-controlled thin films with high spatial uniformity.