85 results about "Chalcogen" patented technology

Described herein is a chalcogen-halide solid electrolyte material represented by the following chemical formula: LiAxEyGz, or NaAxEyGz. In embodiments, A denotes one or more elements selected from the group consisting of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), Lanthanum (La), cerium (Ce), samarium (Sm), and boron (B). In embodiments, E denotes one or more chalcogen elements. In embodiments, G denotes one or more halide elements. In embodiments, the following mathematical formula is satisfied: 0<x<10, 0<y<10, z=nx−2y+1, wherein n=3 when A denotes at least one element selected from the group consisting of La, Ce, Sm, and B, and n=2 when A denotes at least one element selected from the group consisting of Mg, Ca, Sr, and Ba. In embodiments, A is a single element selected from the group consisting of Mg, Ca, Sr, Ba, La, Ce, Sm, or B.

The application provides an inverse perovskite material, a preparation method thereof, a positive electrode material and a sodium ion battery, and belongs to the technical field of electrode materials. The inverse perovskite material has an inverse perovskite structure phase, and a chemical expression formula of the inverse perovskite material is Na x Li y TM z Ch m O n ; wherein 1.5 >= x >= 0.4, 1.6 >= y >= 0.5, 0.8 <= z <= 1.2, 0.8 <= m <= 1.2, and 0.8 <= n <= 1.2; TM is selected from transition metal elements, and Ch is selected from chalcogen elements. The application can improve the first circle discharge specific capacity and the cycle performance of a sodium ion battery prepared by using the inverse perovskite material as a positive electrode material by selecting Na elements, Li elements, transition metal elements, chalcogen elements and oxygen elements and regulating the ratio of the elements.

The application belongs to the technical field of chemical synthetic materials, and relates to an alkali metal ion intercalated transition metal chalcogenide compound as well as a preparation method and application thereof. x M m X n wherein A is one or more of alkali metal elements, and 0 < x < 1; M is one or more of transition metal elements, and m is 1-2; X is one or more of chalcogen elements, and n is 1-3; and the alkali metal ion intercalated transition metal chalcogenide compound is obtained by mixing and reacting an intercalation host transition metal chalcogenide compound, an intercalation guest alkali metal element-containing compound and an auxiliary metal intercalation agent.

This invention provides a method for preparing two-dimensional TMDs alloys using non-metallic chalcogenides. It is a modified CVD method in which a non-metallic chalcogenide containing two chalcogen elements replaces the elemental chalcogenides as the non-metallic growth source. The ratio of the two chalcogen elements in the TMDs alloy can be changed by adjusting the weight ratio of the non-metallic growth source to the metallic growth source. Adding 40 mg of WO3 and 55, 38, 26, and 15 mg of SeS2 respectively yielded WS... 0.96 Se 0.04 WS 0.65 Se 0.35 WS 0.5 Se 0.5 WS 0.27 Se 0.73 Four types of TMD alloy single crystals can be fabricated. Large-size single crystals and large-area thin films of two-dimensional TMD alloys with tunable chemical composition and uniform layer number can be prepared. This provides more options for optoelectronic devices with specific spectral responses, field-effect transistors, and flexible electronic devices.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

The application relates to a surface enhanced Raman scattering (SERS) substrate, a preparation method and application thereof, and belongs to the technical field of Raman spectrum detection. The substrate comprises, from bottom to top, a substrate layer, a distributed Bragg reflector, a chalcogen phase change material functional layer and a nanoscale metal structure layer. The distributed Bragg reflector is composed of a periodic structure stack of medium materials with different refractive indexes. The distributed Bragg reflector is coupled with the nanoscale metal structure layer to excite a Tamm state. The chalcogen phase change material functional layer can realize reversible regulation of amorphous state and crystalline state under external light excitation, changes the Tamm state resonance wavelength to regulate the SERS enhancement effect. The application realizes high-sensitivity detection through double enhancement of the Tamm state and localized surface plasmon resonance, has the characteristics of non-volatility, reconfigurability, high reproducibility and design flexibility, is convenient to operate, stable in performance, and is suitable for fields of chemical biological sensing, laboratory chip systems and optical encryption.

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

The invention discloses a method for maskless growth of a transition metal chalcogenide array. The method comprises the following steps: dissolving transition metal salt and alkali in water to form a precursor solution; hydrophobic modification is carried out on a substrate through OTS, and then a hydrophilic array is formed through etching of a laser marking machine; spin-coating the precursor solution on a substrate to realize region limited distribution of a precursor; placing the precursor in a tubular furnace constant-temperature area, placing chalcogenide powder in the gas inlet end of the tubular furnace, vacuumizing the tubular furnace, introducing protective gas, starting heating, sublimating the chalcogenide powder, enabling the chalcogenide powder to enter the tubular furnace constant-temperature area, and carrying out reaction annealing on the chalcogenide powder and the precursor in the hydrophilic array area to obtain the transition metal chalcogenide array. According to the method, a maskless growth method is adopted, oriented growth of the TMDs array is achieved by regulating and controlling the hydrophilic and hydrophobic properties of the surface of the substrate and the synergistic effect of CVD parameters, the defects in the prior art can be effectively overcome, and the method is high in crystallinity, few in defect, high in position control precision, high in device compatibility, simple and convenient in process and low in cost.

The present disclosure discloses a luminescent N-heterocyclic chalcogenone complex having light-emitting properties and exhibiting air stability. The complex emits green emission at a wavelength in the range of 520 – 550 nm. The present disclosure also reveals a process for preparing the N-heterocyclic chalcogenone with ease of bulk synthesis and short reaction time. Ref. Figure 1

A photoelectric conversion element (10) has a photoelectric conversion layer (26) containing a chalcogen compound semiconductor. When the thickness at a point corresponding to 1 / 4 of the thickness of the photoelectric conversion layer (26) from one interface of the photoelectric conversion layer (26) in the thickness direction is defined as a first depth (D1) and the thickness at a point corresponding to 3 / 4 of the thickness of the photoelectric conversion layer (26) from the interface is defined as a third depth (D3), the content ratio of one element among alkali metal elements in the photoelectric conversion layer (26) at the first depth (D1) is 2.5 times or more than the content ratio of said element at the third depth (D3).

Methods for depositing group 5 chalcogenides on a substrate are disclosed. The methods include cyclical deposition techniques, such as atomic layer deposition. The group 5 chalcogenides can be two-dimensional films having desirable electrical properties.

Described herein is a chalcogen-halide solid electrolyte material represented by the following chemical formula: LiA x E y G z , or NaA x E y G z . In embodiments, A denotes one or more elements selected from the group consisting of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), Lanthanum (La), cerium (Ce), samarium (Sm), and boron (B). In embodiments, E denotes one or more chalcogen elements. In embodiments, G denotes one or more halide elements. In embodiments, the following mathematical formula is satisfied: 0<x<10, 0<y<10, z=nx-2y+1, wherein n=3 when A denotes at least one element selected from the group consisting of La, Ce, Sm, and B, and n=2 when A denotes at least one element selected from the group consisting of Mg, Ca, Sr, and Ba. In embodiments, A is a single element selected from the group consisting of Mg, Ca, Sr, Ba, La, Ce, Sm, or B.

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

The application provides a metal-loaded transition metal oxide-transition metal chalcogenide composite material and a preparation method and application thereof, a transition metal chalcogenide nanoshell is wrapped on the surface of a transition metal oxide nanoparticle to form a core-shell structure, and metal microparticles are loaded on the surface of the transition metal chalcogenide nanoshell, the metal microparticles are single atoms, nanoclusters or nanocrystals. The composite material has double active sites of metal and chalcogen vacancies, and the nanoshell and the metal microparticles are closely combined at a molecular scale, so that the core-shell structure composite material has lower overpotential, smaller Tafel slope and impedance, larger surface active area and better durability when used as an electrocatalyst for electrocatalytic HER. The application solves the problem that pH restricts electrocatalytic HER of a transition metal chalcogenide, provides an atomic-level design strategy for preparing a high-efficiency full-pH electrocatalyst, and has important significance for promoting sustainable hydrogen production by water electrolysis.

Methods of assessing an energy storage device include providing material for a metal-chalcogen battery, washing the metal anode in a first organic solvent to form a polychalcogenide free metal anode upon which gas chromatography is performed on the polychalcogenide free metal anode to quantify the amount of M0, soaking the chalcogen cathode and the remainder of the metal- chalcogen battery in the organic solvent used to wash the metal anode to form a first solution comprising methylated polychalcogenide and any soluble chalcogen, removing any remaining chalcogen cathode from the first solution, dissolving the remaining chalcogen cathode in a second organic solvent to form a chalcogen containing second solution, performing high performance liquid chromatography -ultraviolet on the first solution and the second solution, separately, and performing battery failure analysis based thereon. The battery failure analysis may be completed using a high-performance liquid chromatography -ultraviolet spectroscopy and gas chromatography sequential characterization (HUGS) computer implemented method.

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes a inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

Provided are a radiation-sensitive resist composition and a pattern formation method using the same, wherein the radiation-sensitive resist composition includes an ionic salt (A) including an organic cation (b) and an anion (a) which has a metal chalcogenide cluster structure, and a solvent (B), and a content of the ionic salt (A) in a total solid content of the radiation-sensitive resist composition is in a range of about 20 mass % to about 100 mass %.

The application provides a negative electrode active material and a preparation method thereof, a pole piece and a battery, and relates to the field of batteries. x TM y ChD b , wherein A is lithium and / or sodium, TM is a transition metal, Ch is a chalcogen element, D is O or B a C 1‑a , B is selected from at least one of a negative monovalent anion and a negative monovalent anion cluster, C is selected from at least one of a negative trivalent anion and a negative trivalent anion cluster, 0.5<=x<=8, 0.8<=y<=1.1, 0.25<=a<=0.75, 0.8<=b<=1.2; the negative electrode active material has an amorphous phase, and the mass ratio of the amorphous phase in the negative electrode active material is not less than 10%. The application can improve the technical problem that the existing negative electrode active material cannot simultaneously have high capacity, low expansion and high safety.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, Tl, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.

The invention discloses a transition metal sulfide single crystal with a macro-size asymmetric structure as well as a preparation method and application thereof. The preparation method comprises the following steps: providing a macro-size single-layer transition metal sulfide as a precursor; placing the substrate bearing the precursor in a reaction chamber in a non-horizontal orientation manner, so that a non-zero included angle is formed between the surface of the precursor and the dominant transmission direction of reactant flow in the reaction chamber; hydrogen plasma and a heterogeneous chalcogenide element source are introduced into the reaction chamber at the same time, an atomic layer replacement reaction is carried out under the room temperature condition, chalcogenide atoms on the top layer of the precursor are replaced by heterogeneous chalcogenide atoms, and after the replacement reaction is completely carried out, the transition metal sulfide single-layer material of the Janus structure is obtained. According to the method, the preparation of the high-quality Janus TMDC single crystal with the transverse size reaching the millimeter scale is realized, the prepared Janus single crystal has high spatial uniformity on the millimeter scale, and the process is simple, controllable and large-scale.

The invention discloses a transition metal chalcogenide nanodisk array and a preparation method and application thereof.The preparation method comprises the following steps that S1, polymer microspheres are deposited on a substrate, etching is conducted to reduce the diameter of the polymer microspheres, and a polymer microsphere array is obtained; s2, depositing substrate metal on the surface of the polymer microsphere array, and then removing the polymer microspheres and the substrate metal on the surfaces of the polymer microspheres to obtain a substrate metal nanopore array; s3, depositing transition metal on the surface of the substrate metal nanopore array by using an electron beam evaporation method, and then removing the substrate metal through acid corrosion to obtain a transition metal nanodisk array; and S4, performing chalcogenide annealing on the transition metal nano-disk array to obtain the transition metal chalcogenide nano-disk array. According to the method, the large-area transition metal chalcogenide nano-disk array is efficiently prepared, and the prepared transition metal chalcogenide nano-disk array has high absorption capacity on visible light and near-infrared light.

The application provides a novel chalcogenide compound and a preparation method and application thereof, and the chemical general formula is M 3Bi4 Q 9, wherein M one or two selected from metals Pd and Pt, Q one or two or more combinations of chalcogen elements S, Se and Te. The series of materials belong to the trigonal system, R -3 space group, with a three-dimensional extended crystal structure, and are a novel thermoelectric material. In the structure, M 6 Q 12 ] 12‑ The "hard clusters" are dispersed in Bi- Q The "soft lattice" forms a unique crystal structure of "soft in hard", which has good thermoelectric performance on the basis of ensuring unobstructed electric transport characteristics. Through proper carrier doping, excellent thermoelectric performance can be achieved, and the material is expected to be used in waste heat recovery, thermoelectric refrigeration, thermoelectric power generation and other thermoelectric conversion related fields.

A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.

A chalcogenide perovskite having an average particle size of less than 1 μm and a composition other than BaZrS3.

The invention relates to a two-dimensional chalcogenide nanocrystalline film, an M source growth substrate, a preparation method and application. And the domain size of the two-dimensional chalcogenide nanocrystalline film is less than or equal to 70nm. The preparation method comprises the following steps: selecting ammonium salt of M acid radical as an M source, and preparing an M source solution; coating an aluminum oxide substrate with the M source solution, and heating to obtain an M source precursor; and placing the M source precursor in an inert atmosphere, raising the temperature to a growth temperature, introducing an X-carrying gas source, and maintaining the growth temperature to grow the two-dimensional chalcogenide nanocrystalline film. The crystal domain of the two-dimensional chalcogenide nanocrystalline film can be controlled below 70nm, so that the two-dimensional chalcogenide nanocrystalline film becomes an ideal carrier for constructing a high-safety physical unclonable function; the preparation method of the two-dimensional chalcogenide nanocrystalline thin film comprises the following steps: firstly, obtaining a MOy nanocluster thin film anchored by a local interface, and carrying out reverse epitaxial vulcanization on an MXn two-dimensional chalcogenide nanocrystalline thin film prepared by taking the MOy nanocluster thin film as a precursor to obtain the two-dimensional chalcogenide nanocrystalline thin film of which the crystal domain size is less than or equal to 70nm.

The present invention relates to a method for manufacturing a chalcogenide-based compound thin film. According to an embodiment of the present invention, provided is a method for manufacturing a chalcogenide-based compound thin film, the method comprising: a deposition step of obtaining a chalcogenide-based compound thin film having a preset composition by simultaneously depositing an electropositive material and a chalcogen material on a deposition substrate through a simultaneous deposition process using a simultaneous deposition device.

The invention relates to an S-region metal two-dimensional material and a preparation method thereof, and belongs to the field of low-dimensional materials. The preparation method comprises the following steps: (1) mixing a metal precursor and S-zone metal salt according to a set proportion, uniformly grinding, then placing between two substrates in a central reaction zone of heating equipment, and controlling the reaction temperature to be 500-1100 DEG C; (2) putting a chalcogen precursor in an upstream area of heating equipment, keeping the distance between the chalcogen precursor and the central reaction area at 0-20cm, introducing inert gas into the heating equipment as carrier gas, and mixing reducing gas according to the type of the chalcogen; and (3) chalcogen steam generated in the upstream area is conveyed to a central reaction area through carrier gas, the chalcogen steam reacts with a mixture of a metal precursor and S-area metal salt at the high temperature of 500-1100 DEG C, and finally the S-area metal two-dimensional material is prepared. The S-region metal two-dimensional material prepared by the method has high crystal quality.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.