386 results about "Chalcogen" patented technology

Method of producing one or more transition metal dichalcogenide (MX₂) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX₂ on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H₂X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX₂ layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase. The method may also include making a film of group IB-IIIA-chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.

Copper indium diselenide, copper indium gallium diselenide, and other IB-IIIA-VIA compounds are produced by the liquid deposition on a substrate of a precursor-containing ink, followed by heating to produce the desired material. The precursor containing ink is a mixture of three parts. The first part is plurality of particulates of metal compounds of IB, IIIA. The second part is chalcogen source of selenium, sulfur, or organic chalcogen compounds dissolved in a liquid organic solvent. The third part solution function as viscosity adjustment, as introduction of dopant of sodium ion and/or as ink stabilizer. The precursor ink can be coated on substrate at room temperature and it can be transferred into copper indium (gallium) chalcogenide semiconductor thin film upon baking and a chalcogenization process. The resulting thin film semiconducting material can be incorporated into photovoltaic and other electronic devices.

Methods for depositing group 5 chalcogenides on a substrate are disclosed. The methods include cyclical deposition techniques, such as atomic layer deposition. The group 5 chalcogenides can be two-dimensional films having desirable electrical properties.

A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound. The method may also include making a film of group IB-IIIA-chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.

A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA-chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.

A rechargeable battery or cell is disclosed in which the electrode active material consists of at least one nonmetallic compound or salt of the electropositive species on which the cell is based, and the electrolyte or electrolyte solvent consists predominantly of a halogen-bearing or chalcogen-bearing covalent compound such as SOCl2 or SO2Cl2. Also disclosed are cell component materials which include electrodes that consist primarily of salts of the cell electropositive species and chemically compatible electrolytes. These latter electrolytes include several newly discovered ambient temperature molten salt systems based on the AlCl3-PCl5 binary and the AlCl3-PCl5-PCl3 ternaries.

To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.

The invention discloses a method for preparing a metal chalcogenide film. The method is used for growing the metal chalcogenide film on a substrate with the vapor deposition process by using a chalcogen source and a metal element source and comprises the following steps of: providing three temperature zones, wherein the temperature of the three temperature zones can be controlled independently, and the chalcogen source, the metal element source and the substrate are put in the three temperature zones respectively; controlling the three temperature zones, evaporating the chalcogen source to generate the chalcogen source steam, evaporating the metal element source to generate the metal element source steam, and heating the substrate to the predetermined deposition temperature; providing a carrier gas, and enabling the carrier gas to flow through the three temperature zones in sequence to deliver the metal element source steam to the substrate to deposit and grow so as to form the metal chalcogenide film. The method disclosed by the invention is simple, dispenses with the original complex step of introducing a nucleation site and effectively ensures the purity and the surface cleanness of a sample. The metal chalcogenide film prepared by adopting the method has high quality.

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method includes forming a first layer of a first precursor material over a surface of a substrate, wherein the precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles. The method may include forming at least a second layer of a second precursor material over the first layer, wherein the second precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles and wherein the second precursor material has a chalcogen content greater than that of the first material. The method may also include heating the first layer and the second layer in a suitable atmosphere to a temperature sufficient to react the particles and to release at least the surplus amount of chalcogen from the chalcogenide particles, wherein the surplus amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio

Methanol tolerant catalyst material and method of its preparation are provided. These novel catalyst materials are based on organometallic clusters containing (i) a carbonyl group or a cyclic unsaturated hydrocarbon ligand group, and (ii) a chalcogen containing group selected from M_nFe_pX_m, M_nX_m, M_nCl_pX_m, or mixtures thereof wherein M=Pt, Ru or Re, X=S, Se or Te, and m, n and p=1 or 2. The catalyst materials are obtained by mixing together organometallic clusters of definite composition with an electrically conductive component in an organic solvent, subsequent removing of the solvent, and in a non-oxidizing environment, heat-treating the clusters adsorbed on the electrically conductive component at the temperature of at least 175° C.

A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.

A particle having a core of elemental chalcogen elements, such as sulfur, selenium and tellurium, and a coating of at least one polymeric layer on the core. A functionalized conductive carbon material is dispersed in the core. A cathode containing the particles and a battery constructed with the cathode are also provided.

A method of preparing metal chalcogenides from elemental metal or metal compounds has the following steps: providing at least one elemental metal or metal compound; providing at least one element from periodic table groups 13-15; providing at least one chalcogen; and combining and heating the chalcogen, the group 13-15 element and the metal at sufficient time and temperature to form a metal chalcogenide. A method of functionalizing the surface of semiconducting nanoparticles has the following steps: providing at least one metad compound; providing one chalcogenide having a cation selected from the group 13-15 (B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb and Bi); dissolving the chalcogenide in a first solution; dissolving the metal compound in a second solution; providing and dissolving a functional capping agent in at least one of the solutions of the metal compounds and chalcogenide; combining all solutions; and maintaining the combined solution at a proper temperature for an appropriate time.

A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.