45 results about "Metal chalcogenides" patented technology

A grease composition that includes at least an oil-based medium, a thickener, and a fullerene-like nano-structure. The fullerene-like nano-structure includes a plurality of layers each comprised of a metal chalcogenide composition has a molecular formula of MX2, where M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.

This application discloses a two-dimensional flexible biochemical sensor, its fabrication method, and its application, relating to the field of biochemical sensors. It comprises a substrate, a gate electrode layer, a dielectric layer, a mixed-phase transition metal chalcogenide (MTC) layer, and a MTC pn junction layer stacked sequentially. Electrode layers, both connected to the mixed-phase MTC layer and the MTC pn junction layer, are further disposed on the latter. Both the mixed-phase MTC layer and the MTC pn junction layer comprise the same MTC compound. The gate electrode layer is used to regulate the current in the mixed-phase MTC layer, and the MTC pn junction layer is used to sense biochemical signals and generate changing currents. This application is beneficial for improving the sensitivity and response speed of biochemical sensors.

The present invention belongs to the field of nanomaterial technology, and provides a bimetallic chalcogenide composite material, and a preparation method and application thereof. The composite material of the present invention includes a two-dimensional layered carrier, and a first metal chalcogenide and a second metal chalcogenide loaded on the two-dimensional layered carrier; the two-dimensional layered carrier is a MXene material, and the MXene material is an M metallized carbon material; the first metal chalcogenide is MX2; the second metal chalcogenide is AX2; wherein M is a first metal, A is a second metal, and X is a chalcogen element. The present invention uses a two-dimensional layered carrier as a carrier to load the bimetallic chalcogenide, which can make the structure of the bimetallic chalcogenide complete; and the two-dimensional layered carrier can form a stable heterogeneous interface with the bimetallic chalcogenide, which is beneficial to the charge transfer between different components and the rapid storage of lithium ions, so that the composite material can be better applied to the field of lithium storage negative electrodes.

The application belongs to the field of photocatalytic water decomposition, and relates to a hollow indium zinc sulfide composite catalyst material loaded with double cocatalysts and a preparation method and application thereof. The material is a composite material of double metal chalcogenide indium zinc sulfide and MnO2 and Ti3C2, the MnO2 has a hollow spherical structure, the indium zinc sulfide has a two-dimensional sheet structure, the indium zinc sulfide is coated on the outer surface of the MnO2 to form a composite spherical structure, and the Ti3C2 is attached to the surface of the composite spherical structure. The catalyst material not only has a higher specific surface area to provide more surface active sites, but also can enhance the refraction and reflection of light, thereby improving the utilization efficiency of light. The MnO2 and the Ti3C2 can be used as hole-type and electron-type cocatalysts respectively, and the unique carrier transport path thereof promotes the separation and transfer of photo-generated carriers, thereby enhancing the photocatalytic hydrogen production and benzyl alcohol oxidation performance of the material.

The application belongs to the technical field of solar cells, and relates to a CdTe thin film cell with a window layer of a multilayer cyclic composite structure and a preparation method thereof. The CdTe thin film cell comprises a glass substrate, a transparent conductive layer, a buffer layer, a window layer, an absorption layer, a back contact layer and a metal electrode layer which are arranged in layers. The window layer is of a multilayer cyclic composite structure, and the material of a cyclic unit comprises a metal chalcogenide compound. The window layer with the multilayer cyclic composite structure optimizes a photon transmission path, avoids the generation of pinhole phenomenon of the window layer, prevents short circuit and current shunt of the cell, and significantly improves the conversion efficiency of the solar cell.

The present invention relates to a quantum dot population comprising metal chalcogenide quantum dots, wherein the metal chalcogenide quantum dots comprise metal thiolate ligands. The present invention also relates to a method for obtaining the quantum dot population of the invention, and to an optoelectronic device comprising the quantum dot population.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a stack of metal chalcogenide nanoribbons extending between a source and drain and contacted by a gate structure. The metal chalcogenide nanoribbons may be recrystallized using a local laser anneal treatment and / or a dopant may be applied, outside of a channel region of the metal chalcogenide nanoribbons, using a local laser treatment in the presence of a precursor including the dopant.

A metal chalcogenide monocrystalline thin film and a preparation method therefor, belonging to the field of materials. The metal chalcogenide single-crystal thin film comprises multiple layers of rhombohedral or hexagonal metal chalcogenide monocrystalline grains stacked sequentially, the metal chalcogenide single-crystal grains in each layer being unidirectionally oriented, and the unidirectional orientation directions of any two adjacent layers of metal chalcogenide single-crystal grains being parallel. By means of cooperation of the described multiple layers of unidirectional phase-structured metal chalcogenide single-crystal grains stacked in parallel, the metal chalcogenide monocrystalline thin film combines advantages such as high uniformity, high quality, wafer scale, phase purity and controllable thickness.

The application discloses a ternary metal telluride bifunctional water hydrogen production catalyst and a preparation method. x (CoNi)‑MOF; and then the Fe x (CoNi)Te x is loaded on the foam nickel to obtain a catalyst material Fe x (CoNi)Te x (CoNi)Te x (CoNi)Te x@ NF, wherein Fe2(CoNi)Te @ NF has excellent HER and OER catalytic activity, has rich active sites, and has excellent characteristics such as low overpotential, excellent kinetics, small impedance and good cycle stability. The application provides a high-efficiency non-noble metal catalyst with low cost and excellent catalytic activity for water electrolysis hydrogen production, and can effectively promote the commercialization process of hydrogen production technology.

This invention relates to an oxidation-induced lattice softening etching method and patterning method for metal chalcogenide layers, and a method for fabricating transistor devices. The oxidation-induced lattice softening etching method of this invention includes: (A1) plasma treatment of the metal chalcogenide layer in an atmosphere containing O2 and / or O3, wherein the metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is sulfur, selenium, or tellurium, and n is 1 to 4; (A2) Plasma etching is performed on the oxidized metal chalcogenide layer in an inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for plasma etching of the exposed, unoxidized substrate in the same atmosphere. The patterning method and transistor device fabrication method of the present invention are based on this etching method.

Provided are a radiation-sensitive resist composition and a pattern formation method using the same, wherein the radiation-sensitive resist composition includes an ionic salt (A) including an organic cation (b) and an anion (a) which has a metal chalcogenide cluster structure, and a solvent (B), and a content of the ionic salt (A) in a total solid content of the radiation-sensitive resist composition is in a range of about 20 mass % to about 100 mass %.

To provide organometallic photoresist compositions and methods to form photoresist coatings and patterns using the compositions.SOLUTION: There is described patterning with UV and EUV light using organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. There are described corresponding precursor solutions, structures and methods.SELECTED DRAWING: None

A radiation-sensitive resist composition including an ionic salt (A); and a solvent (B). The ionic salt (A) including an ion (a) and a counter ion (b); the ion (a) having a metal chalcogenide cluster structure; and the counter ion (b) having a charge counter to a charge of the ion (a). The ion (a) including a halogen atom and at least one metal atom selected from Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.

Cathode active material layers and methods are disclosed. The cathode active material layer includes a metal chalcogen, an electroactive sulfur conversion cathode material, and an electroactive selenium conversion cathode material. The cathode active material layer includes the metal chalcogen in a weight ratio (w / w) of between 5% and 75%, the electroactive sulfur conversion cathode material in a weight ratio (w / w) of between 15% and 75%, and the electroactive selenium conversion cathode material in a weight ratio (w / w) of between 2% and 25%.

The present disclosure provides a coated article comprising a substrate selected from a metal, a metal atom-containing material, or a ceramic material, wherein the substrate is at least partially coated with a polymeric carbon nitride (CN) layer. The coated article may comprise a metal chalcogenide, a chalcogen-doped metal oxide, or a chalcogen-containing ceramic material. The present disclosure also provides processes for the preparation of the coated articles and uses thereof.

The invention relates to the technical field of aerogel preparation methods, in particular to a method for synthesizing metal chalcogenide cluster-based aerogel, which is prepared according to the following steps: at room temperature, uniformly mixing a metal acetylacetonate formamide solution with a metal chalcogenide nanocluster solution, reacting, and aging to obtain the metal chalcogenide cluster-based aerogel. The preparation method comprises the following steps: rapidly freezing with liquid nitrogen, heating, unfreezing and melting to obtain metal chalcogenide cluster-based wet gel, carrying out solvent exchange, and carrying out vacuum freeze-drying treatment to obtain the metal chalcogenide cluster-based aerogel based on the main group metal chalcogenide nanocluster and the transition metal TM. The method disclosed by the invention is relatively rapid, simple and convenient, time and equipment cost are greatly saved, large-scale industrial production is facilitated, and the method has wide application prospects in the fields of catalysis, adsorption, construction of Li ion batteries and sensing devices and the like.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

The invention discloses a symmetric and asymmetric supercapacitor. The symmetric supercapacitor includes: a first electrode; an electrolyte; and a second electrode. The first and second electrodes include a nanostructure of a carbon-based material and a metal chalcogen compound, where the metal is selected from the group consisting of Cu, Va, Ni, Fe, Ag, Co, Mn, Sn, and any combination thereof, and the chalcogen is selected from the group consisting of Te, Se, and S. The asymmetric supercapacitor includes: a substrate; a first electrode comprising a first carbon-based material and a first nanostructure of a metal chalcogen compound wherein the metal is selected from Cu and Sn and the chalcogen is selected from Te, Se and S; an electrolyte; and a second electrode comprising a second carbon-based material.

The invention belongs to the technical field of solar cells, and relates to a CdTe thin film cell with a window layer of a multi-layer cyclic composite structure and a preparation method of the CdTe thin film cell, the CdTe thin film cell comprises a glass substrate, a transparent conductive layer, a buffer layer, a window layer, an absorption layer, a back contact layer and a metal electrode layer which are stacked; wherein the window layer is of a multi-layer cyclic composite structure, and the material of a cyclic unit comprises a metal chalcogenide. By adopting the window layer with the multi-layer cyclic composite structure, a photon transmission path is optimized, a pinhole phenomenon of the window layer is avoided, short circuit and current shunting of the cell are prevented, and the conversion efficiency of the solar cell is remarkably improved.

Integrated circuit interconnect structures including an interconnect line metallization feature subjected to one or more chalcogenation techniques to form a cap may reduce line resistance. A top portion of a bulk line material may be advantageously crystallized into a metal chalcogenide cap with exceptionally large crystal structure. Accordingly, chalcogenation of a top portion of a bulk material can lower scattering resistance of an interconnect line relative to alternatives where the bulk material is capped with an alternative material, such as an amorphous dielectric or a fine grained metallic or graphitic material.

A vapor deposition system is described. A vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to hold a substrate therein. The reactant delivery subsystem includes an inlet, a pre-reaction zone, and an outlet. The inlet receives a precursor and chalcogen precursor (s). The pre-reaction zone is configured to receive a precursor from a portion of the inlet and to react at least a portion of the precursor to form modified precursor (s). The modified precursor (s) are more thermally stable than the metal-containing precursor (s) used as the precursor (s) to form the modified precursor (s). The outlet is coupled with the reaction chamber and the pre-reaction zone. The outlet separately provides the modified precursor (s) and the chalcogen precursor (s) to the reaction chamber. The modification precursor (s) and the chalcogen precursor (s) react in the reaction chamber and form a chalcogen film on the substrate.

The subject invention provides a novel class of mixed-metal chalcogenide compounds exhibiting POD-like catalytic activity, efficient photothermal conversion under NIR irradiation, and broad-spectrum antimicrobial properties. The invention further provides hydrogel formulations incorporating these compounds in a polymeric matrix, as well as their use in a range of biomedical applications, such as treating infected wounds, preventing surgical site infections, and delivering localized, non-antibiotic antimicrobial therapy.

The invention relates to a method for producing a layer system (10) for the manufacture of thin-film solar cells, which comprises the following steps: - providing a chalcogen-containing absorber layer (3), - applying a post-treatment layer to the absorber layer (3), wherein the post-treatment layer contains at least one post-treatment material selected from the group consisting of a metal chalcogenide, an oxygen compound of a metal chalcogenide and a hydrogen-oxygen compound of a metal chalcogenide; - thermally diffusing the at least one post-treatment substance into the absorber layer (3), - applying an intermediate layer (4) to the absorber layer (3) with the at least one thermally diffused post-treatment substance, wherein the intermediate layer contains InS: XCl, wherein X is an alkali metal, in particular sodium, - applying at least one buffer layer (5) to the intermediate layer (4), wherein the buffer layer (5) contains at least one sulphide. The invention also relates to an apparatus (100) for carrying out the method.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.

The invention relates to the field of photoelectric detection preparation, in particular to a large-area platinum selenide film preparation method based on a two-step method. The preparation method comprises the following steps: firstly, preparing platinum film units on a substrate in an array arrangement manner; an aluminum oxide isolation layer is deposited on the periphery of each platinum film unit to form a micron-sized aluminum oxide isolation wall, gas-phase side reaction is inhibited by utilizing an array area formed by the aluminum oxide isolation layers, the utilization rate of a reaction source is improved, and directional transmission of a source material is driven by adjusting the reaction temperature and air pressure and the inclination angle of a substrate, so that the reaction efficiency is improved. Therefore, large-scale, high-uniformity and high-quality auxiliary growth of the platinum selenide film is realized. And the method can be further used for preparing a large-area integrated platinum selenide heterojunction array device, and the process is compatible with a CMOS (Complementary Metal Oxide Semiconductor). The method is suitable for preparing similar silicon metal chalcogenide, and a new thought is broadened for large-scale preparation of uniform heterojunction devices.

The invention provides a lithium-rich manganese-based positive electrode active material as well as a preparation method and application thereof. The lithium-rich manganese-based positive electrode active material comprises a lithium-rich manganese-based core, a first coating layer and a second coating layer, wherein the first coating layer is positioned on at least part of the surface of the lithium-rich manganese-based core and between primary particle crystal boundaries on the surface of the lithium-rich manganese-based core; the second coating layer coats at least part of the surface of the first coating layer; wherein the chemical formula of the lithium-rich manganese-based inner core is xLi2MnO3. (1-x) LiTMO2, TM is one or more of Ni, Co, Mn, W, Mo, Ta, Zr and Y, and x is more than 0 and less than 1; the first coating layer comprises lithium cobalt oxide; and the second coating layer comprises a variable valence metal chalcogenide. The lithium-rich manganese-based positive electrode active material with relatively high crystal boundary interface stability, low interface side reaction, high electron conduction capability and high ion transmission capability is obtained, and the electrochemical performance of the battery is comprehensively improved.

A method of manufacturing an electrochemical cell, the method comprising: Providing a porous or non-porous metal substrate; Exposing a surface of the metal substrate to a chalcogen in the gas phase so that a conformal metal chalcogenide layer forms on the surface of the metal substrate; Providing a lithium metal foil having a first surface and an opposite second surface; and Laminating the lithium metal foil onto the metal chalcogenide layer on the surface of the metal substrate, so that the first surface of the lithium metal foil physically and chemically bonds to the metal chalcogenide layer on the surface of the metal substrate, wherein the surface of the metal substrate and the metal chalcogenide layer are heated to a temperature above a melting point of lithium, so that when the lithium metal foil is laminated to the metal chalcogenide layer on the surface of the metal substrate, the first surface of the lithium metal foil melts locally and actively wets the metal chalcogenide layer on the surface of the metal substrate without melting the second surface of the lithium metal foil, wherein the surface of the metal substrate and the metal chalcogenide layer are heated to a temperature in the range of 250 °C to 450 °C before the lithium metal foil is laminated to the metal chalcogenide layer on the surface of the metal substrate, and wherein the second surface of the lithium metal foil is maintained at a temperature below 180 °C before the lithium metal foil is laminated to the metal chalcogenide layer on the surface of the metal substrate.

A self-powered broadband optical detection element and its manufacturing method are disclosed. The self-powered broadband optical detection element of the present invention comprises a substrate, multiple nanopillars, and multiple nanosheet clusters. The multiple nanopillars are formed on the upper surface of the substrate. The multiple nanopillars are formed of a metal oxide compound. Each nanosheet cluster is formed at the tip of one of the multiple nanopillars. The multiple nanosheet clusters are formed of a metal chalcogenide compound.

This application belongs to the field of display technology and relates to a light-emitting device and its fabrication method, as well as a display device. The light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially. The first interface layer is made of a composite material, which includes transition metal sulfides and metal chalcogenide complexes. By providing a first interface layer, this application can improve the electron transport efficiency of the light-emitting device, thereby increasing its luminous efficiency and lifespan.