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8 results about "Metal chalcogenides" patented technology

A metal chalcogenide is a compound made from a metallic element and a member of the chalcogenide family, namely the elements under oxygen–sulfur, selenium, and tellurium.

A two-dimensional flexible biochemical sensor and a preparation method and application thereof

PendingCN122330229AMetal chalcogenidesBiology
This application discloses a two-dimensional flexible biochemical sensor, its fabrication method, and its application, relating to the field of biochemical sensors. It comprises a substrate, a gate electrode layer, a dielectric layer, a mixed-phase transition metal chalcogenide (MTC) layer, and a MTC pn junction layer stacked sequentially. Electrode layers, both connected to the mixed-phase MTC layer and the MTC pn junction layer, are further disposed on the latter. Both the mixed-phase MTC layer and the MTC pn junction layer comprise the same MTC compound. The gate electrode layer is used to regulate the current in the mixed-phase MTC layer, and the MTC pn junction layer is used to sense biochemical signals and generate changing currents. This application is beneficial for improving the sensitivity and response speed of biochemical sensors.
Owner:WUHAN UNIV OF SCI & TECH

Oxidation-induced lattice softening etching method and patterning method of metal chalcogenide layer and method for constructing transistor device

PendingCN122294850AMetal chalcogenidesMaterials science
This invention relates to an oxidation-induced lattice softening etching method and patterning method for metal chalcogenide layers, and a method for fabricating transistor devices. The oxidation-induced lattice softening etching method of this invention includes: (A1) plasma treatment of the metal chalcogenide layer in an atmosphere containing O2 and / or O3, wherein the metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is sulfur, selenium, or tellurium, and n is 1 to 4; (A2) Plasma etching is performed on the oxidized metal chalcogenide layer in an inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for plasma etching of the exposed, unoxidized substrate in the same atmosphere. The patterning method and transistor device fabrication method of the present invention are based on this etching method.
Owner:TSINGHUA UNIVERSITY

Photothermal-responsive injectable hydrogel for wound healing, healing, antibacterial and other biomedical applications

ActiveUS12678456B1Surgical site infectionMetal chalcogenides
The subject invention provides a novel class of mixed-metal chalcogenide compounds exhibiting POD-like catalytic activity, efficient photothermal conversion under NIR irradiation, and broad-spectrum antimicrobial properties. The invention further provides hydrogel formulations incorporating these compounds in a polymeric matrix, as well as their use in a range of biomedical applications, such as treating infected wounds, preventing surgical site infections, and delivering localized, non-antibiotic antimicrobial therapy.
Owner:FLORIDA INTERNATIONAL UNIVERSITY

Self-powered broadband optical detection element and its manufacturing method

PendingCN122318324ANanopillarMetal chalcogenides
A self-powered broadband optical detection element and its manufacturing method are disclosed. The self-powered broadband optical detection element of the present invention comprises a substrate, multiple nanopillars, and multiple nanosheet clusters. The multiple nanopillars are formed on the upper surface of the substrate. The multiple nanopillars are formed of a metal oxide compound. Each nanosheet cluster is formed at the tip of one of the multiple nanopillars. The multiple nanosheet clusters are formed of a metal chalcogenide compound.
Owner:MING CHI UNIVERSITY OF TECHNOLOGY

Light-emitting device, method for manufacturing the same, and display apparatus

PendingCN122294714AMetal chalcogenidesDisplay device
This application belongs to the field of display technology and relates to a light-emitting device and its fabrication method, as well as a display device. The light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially. The first interface layer is made of a composite material, which includes transition metal sulfides and metal chalcogenide complexes. By providing a first interface layer, this application can improve the electron transport efficiency of the light-emitting device, thereby increasing its luminous efficiency and lifespan.
Owner:GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD

Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a doping layer on metal chalcogenide nanoribbons outside of the channel region. The doping layer is a metal oxide that shifts the electrical characteristics of the nanoribbons and is formed by depositing a metal and oxidizing the metal by exposure to ozone and ultraviolet light.
Owner:INTEL CORP

Silicon-based negative electrode material for sulfide all-solid-state battery, preparation method and application thereof

The present application relates to the technical field of all-solid-state batteries, and particularly relates to a silicon-based composite negative electrode of an all-solid-state battery, a preparation method and application. The present application mainly solves the problem of kinetic retardation in the cycle process of the existing silicon negative electrode. The composite silicon-based material is mainly based on in-situ mechanical solid-phase conversion reaction of silver metal chalcogenide (or halide) compound and silicon. By adding Ag2S or AgF in the ball milling process, the construction of Ag metal nanodomains can be realized, the ion / electron conductor network is constructed, and the ion / electron transmission kinetics of Si is greatly enhanced.
Owner:HARBIN INST OF TECH

Method for producing semiconductor quantum dots

ActiveUS12668740B2Bio moleculesMetal chalcogenides
Biomineralization—the synthesis of inorganic materials using proteins—has recently gained interest as a low cost, green route for the production of metal chalcogenide semiconductor nanocrystals. Typical biomineralization approaches rely on proteins or biomolecules identified from organisms which possess a native biomineralization response. Disclosed herein is an alternative biomineralization approach for synthesizing metal chalcogenide nanocrystals which uses an artificially designed de novo protein. De novo proteins are non-natural proteins, allowing for facile modification of the protein through the tuning of amino acids within the sequence. This de novo protein was employed to produce size-controlled populations of semiconductor nanocrystals, with properties consistent with those produced using traditional routes.
Owner:THE TRUSTEES OF PRINCETON UNIV