This invention relates to an oxidation-induced lattice
softening etching method and patterning method for
metal chalcogenide layers, and a method for fabricating
transistor devices. The oxidation-induced lattice
softening etching method of this invention includes: (A1)
plasma treatment of the
metal chalcogenide layer in an
atmosphere containing O2 and / or O3, wherein the
metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile
etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is
sulfur,
selenium, or
tellurium, and n is 1 to 4; (A2)
Plasma etching is performed on the oxidized metal chalcogenide layer in an
inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for
plasma etching of the exposed, unoxidized substrate in the same
atmosphere. The patterning method and
transistor device fabrication method of the present invention are based on this etching method.