29 results about "Metal chalcogenides" patented technology

This application discloses a two-dimensional flexible biochemical sensor, its fabrication method, and its application, relating to the field of biochemical sensors. It comprises a substrate, a gate electrode layer, a dielectric layer, a mixed-phase transition metal chalcogenide (MTC) layer, and a MTC pn junction layer stacked sequentially. Electrode layers, both connected to the mixed-phase MTC layer and the MTC pn junction layer, are further disposed on the latter. Both the mixed-phase MTC layer and the MTC pn junction layer comprise the same MTC compound. The gate electrode layer is used to regulate the current in the mixed-phase MTC layer, and the MTC pn junction layer is used to sense biochemical signals and generate changing currents. This application is beneficial for improving the sensitivity and response speed of biochemical sensors.

The application belongs to the field of photocatalytic water decomposition, and relates to a hollow indium zinc sulfide composite catalyst material loaded with double cocatalysts and a preparation method and application thereof. The material is a composite material of double metal chalcogenide indium zinc sulfide and MnO2 and Ti3C2, the MnO2 has a hollow spherical structure, the indium zinc sulfide has a two-dimensional sheet structure, the indium zinc sulfide is coated on the outer surface of the MnO2 to form a composite spherical structure, and the Ti3C2 is attached to the surface of the composite spherical structure. The catalyst material not only has a higher specific surface area to provide more surface active sites, but also can enhance the refraction and reflection of light, thereby improving the utilization efficiency of light. The MnO2 and the Ti3C2 can be used as hole-type and electron-type cocatalysts respectively, and the unique carrier transport path thereof promotes the separation and transfer of photo-generated carriers, thereby enhancing the photocatalytic hydrogen production and benzyl alcohol oxidation performance of the material.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a stack of metal chalcogenide nanoribbons extending between a source and drain and contacted by a gate structure. The metal chalcogenide nanoribbons may be recrystallized using a local laser anneal treatment and / or a dopant may be applied, outside of a channel region of the metal chalcogenide nanoribbons, using a local laser treatment in the presence of a precursor including the dopant.

This invention relates to an oxidation-induced lattice softening etching method and patterning method for metal chalcogenide layers, and a method for fabricating transistor devices. The oxidation-induced lattice softening etching method of this invention includes: (A1) plasma treatment of the metal chalcogenide layer in an atmosphere containing O2 and / or O3, wherein the metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is sulfur, selenium, or tellurium, and n is 1 to 4; (A2) Plasma etching is performed on the oxidized metal chalcogenide layer in an inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for plasma etching of the exposed, unoxidized substrate in the same atmosphere. The patterning method and transistor device fabrication method of the present invention are based on this etching method.

Provided are a radiation-sensitive resist composition and a pattern formation method using the same, wherein the radiation-sensitive resist composition includes an ionic salt (A) including an organic cation (b) and an anion (a) which has a metal chalcogenide cluster structure, and a solvent (B), and a content of the ionic salt (A) in a total solid content of the radiation-sensitive resist composition is in a range of about 20 mass % to about 100 mass %.

To provide organometallic photoresist compositions and methods to form photoresist coatings and patterns using the compositions.SOLUTION: There is described patterning with UV and EUV light using organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. There are described corresponding precursor solutions, structures and methods.SELECTED DRAWING: None

A radiation-sensitive resist composition including an ionic salt (A); and a solvent (B). The ionic salt (A) including an ion (a) and a counter ion (b); the ion (a) having a metal chalcogenide cluster structure; and the counter ion (b) having a charge counter to a charge of the ion (a). The ion (a) including a halogen atom and at least one metal atom selected from Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.

The present disclosure provides a coated article comprising a substrate selected from a metal, a metal atom-containing material, or a ceramic material, wherein the substrate is at least partially coated with a polymeric carbon nitride (CN) layer. The coated article may comprise a metal chalcogenide, a chalcogen-doped metal oxide, or a chalcogen-containing ceramic material. The present disclosure also provides processes for the preparation of the coated articles and uses thereof.

The invention relates to the technical field of aerogel preparation methods, in particular to a method for synthesizing metal chalcogenide cluster-based aerogel, which is prepared according to the following steps: at room temperature, uniformly mixing a metal acetylacetonate formamide solution with a metal chalcogenide nanocluster solution, reacting, and aging to obtain the metal chalcogenide cluster-based aerogel. The preparation method comprises the following steps: rapidly freezing with liquid nitrogen, heating, unfreezing and melting to obtain metal chalcogenide cluster-based wet gel, carrying out solvent exchange, and carrying out vacuum freeze-drying treatment to obtain the metal chalcogenide cluster-based aerogel based on the main group metal chalcogenide nanocluster and the transition metal TM. The method disclosed by the invention is relatively rapid, simple and convenient, time and equipment cost are greatly saved, large-scale industrial production is facilitated, and the method has wide application prospects in the fields of catalysis, adsorption, construction of Li ion batteries and sensing devices and the like.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

The invention discloses a symmetric and asymmetric supercapacitor. The symmetric supercapacitor includes: a first electrode; an electrolyte; and a second electrode. The first and second electrodes include a nanostructure of a carbon-based material and a metal chalcogen compound, where the metal is selected from the group consisting of Cu, Va, Ni, Fe, Ag, Co, Mn, Sn, and any combination thereof, and the chalcogen is selected from the group consisting of Te, Se, and S. The asymmetric supercapacitor includes: a substrate; a first electrode comprising a first carbon-based material and a first nanostructure of a metal chalcogen compound wherein the metal is selected from Cu and Sn and the chalcogen is selected from Te, Se and S; an electrolyte; and a second electrode comprising a second carbon-based material.

Integrated circuit interconnect structures including an interconnect line metallization feature subjected to one or more chalcogenation techniques to form a cap may reduce line resistance. A top portion of a bulk line material may be advantageously crystallized into a metal chalcogenide cap with exceptionally large crystal structure. Accordingly, chalcogenation of a top portion of a bulk material can lower scattering resistance of an interconnect line relative to alternatives where the bulk material is capped with an alternative material, such as an amorphous dielectric or a fine grained metallic or graphitic material.

A vapor deposition system is described. A vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to hold a substrate therein. The reactant delivery subsystem includes an inlet, a pre-reaction zone, and an outlet. The inlet receives a precursor and chalcogen precursor (s). The pre-reaction zone is configured to receive a precursor from a portion of the inlet and to react at least a portion of the precursor to form modified precursor (s). The modified precursor (s) are more thermally stable than the metal-containing precursor (s) used as the precursor (s) to form the modified precursor (s). The outlet is coupled with the reaction chamber and the pre-reaction zone. The outlet separately provides the modified precursor (s) and the chalcogen precursor (s) to the reaction chamber. The modification precursor (s) and the chalcogen precursor (s) react in the reaction chamber and form a chalcogen film on the substrate.

The subject invention provides a novel class of mixed-metal chalcogenide compounds exhibiting POD-like catalytic activity, efficient photothermal conversion under NIR irradiation, and broad-spectrum antimicrobial properties. The invention further provides hydrogel formulations incorporating these compounds in a polymeric matrix, as well as their use in a range of biomedical applications, such as treating infected wounds, preventing surgical site infections, and delivering localized, non-antibiotic antimicrobial therapy.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.

The invention provides a lithium-rich manganese-based positive electrode active material as well as a preparation method and application thereof. The lithium-rich manganese-based positive electrode active material comprises a lithium-rich manganese-based core, a first coating layer and a second coating layer, wherein the first coating layer is positioned on at least part of the surface of the lithium-rich manganese-based core and between primary particle crystal boundaries on the surface of the lithium-rich manganese-based core; the second coating layer coats at least part of the surface of the first coating layer; wherein the chemical formula of the lithium-rich manganese-based inner core is xLi2MnO3. (1-x) LiTMO2, TM is one or more of Ni, Co, Mn, W, Mo, Ta, Zr and Y, and x is more than 0 and less than 1; the first coating layer comprises lithium cobalt oxide; and the second coating layer comprises a variable valence metal chalcogenide. The lithium-rich manganese-based positive electrode active material with relatively high crystal boundary interface stability, low interface side reaction, high electron conduction capability and high ion transmission capability is obtained, and the electrochemical performance of the battery is comprehensively improved.

A self-powered broadband optical detection element and its manufacturing method are disclosed. The self-powered broadband optical detection element of the present invention comprises a substrate, multiple nanopillars, and multiple nanosheet clusters. The multiple nanopillars are formed on the upper surface of the substrate. The multiple nanopillars are formed of a metal oxide compound. Each nanosheet cluster is formed at the tip of one of the multiple nanopillars. The multiple nanosheet clusters are formed of a metal chalcogenide compound.

This application belongs to the field of display technology and relates to a light-emitting device and its fabrication method, as well as a display device. The light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially. The first interface layer is made of a composite material, which includes transition metal sulfides and metal chalcogenide complexes. By providing a first interface layer, this application can improve the electron transport efficiency of the light-emitting device, thereby increasing its luminous efficiency and lifespan.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a doping layer on metal chalcogenide nanoribbons outside of the channel region. The doping layer is a metal oxide that shifts the electrical characteristics of the nanoribbons and is formed by depositing a metal and oxidizing the metal by exposure to ozone and ultraviolet light.

The invention relates to the technical field of composite materials, in particular to a 1T'phase intercalation material and a preparation method and application thereof. Comprising a two-dimensional layered material and an embedded material, the two-dimensional layered material comprises a 1T'phase transition metal chalcogenide compound with the chemical formula of MX2, M in MX2 comprises a transition metal element, and X comprises a first chalcogenide element; the embedded material is embedded in the interlayer of the 1T'phase transition metal chalcogenide, the chemical formula of the embedded material is D2Z, D in the D2Z comprises an alkali metal element, and Z comprises a second chalcogenide element. The preparation method comprises the following steps: in a reducing atmosphere, carrying out 1T'phase heat treatment on H2X and DaMbOc to generate a 1T 'phase intercalation material. The 1T'phase intercalation material is good in stability and not prone to phase change, the purity of the material prepared through the preparation method is high, and the material can be used for electrochemical catalysts, energy storage devices, superconducting materials and synaptic transistors.

The application provides a metal chalcogenide alloy compound magic size cluster and a preparation method thereof, and belongs to the technical field of semiconductor materials. The application improves the reaction activity of chalcogenide anions through the activation of an amino phosphine, realizes the synthesis of different types of multi-element alloy magic size clusters (MSCs) by means of a single anion ligand and control of a reaction temperature, and provides a simple and convenient preparation method of metal chalcogenide alloy MSCs, which has important significance for the synthesis of metal chalcogenide alloy semiconductor quantum dots and the subsequent application of quantum dot photoelectric devices based on metal chalcogenide alloy compounds.

An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.

The invention provides a lithium metal negative electrode loaded with a lithium-philic phase, a preparation method of the lithium metal negative electrode and a lithium metal battery, and belongs to the technical field of lithium batteries. The preparation method of the lithium metal negative electrode loaded with the lithium-loving phase comprises the following steps: in an oxygen-free and water-free environment, heating a metal lithium source to a molten state to obtain liquid metal lithium; adding a lithium-loving metal chalcogenide into the liquid metal lithium, stirring and mixing to obtain a composite material, and reacting the liquid metal lithium with the metal chalcogenide in the stirring and mixing process to form a lithium-loving phase; and cooling the composite material to a solid state, coating a lubricant, rolling, and standing in an oxygen-free and water-free environment to obtain the lithium metal negative electrode loaded with the lithium-loving phase.

The invention relates to a preparation method of a metal chalcogenide flexible thermoelectric film and the flexible thermoelectric film. The preparation method comprises the following steps: synthesizing metal chalcogenide thermoelectric material powder; polishing the substrate material with abrasive paper to roughen the surface of the substrate material; cleaning and drying the substrate and the screen printing plate; weighing a certain amount of metal chalcogenide powder, fully grinding the metal chalcogenide powder in a mortar, adding terpilenol and a dispersing agent into the mortar, and fully grinding and uniformly mixing to obtain ink; fixing a screen printing plate, placing a substrate, and scraping printing ink to carry out screen printing operation; the printed film is placed in a vacuum drying box to be dried; transferring the membrane into a tubular furnace for annealing treatment; and then carrying out hot pressing treatment to finally obtain the metal chalcogenide thermoelectric film. According to the invention, the preparation of the flexible thermoelectric film combined with the substrate with the rough surface is realized by adopting silk-screen printing and hot pressing, and the simplification of the preparation of the metal chalcogenide thermoelectric film and the improvement of various properties are realized.

The application discloses a medium-entropy metal telluride and a preparation method and application thereof, specifically, metal salt and fumaric acid are used in an N,N-dimethylformamide solvent environment, so that metal ions and carboxyl groups are fully contacted and coordinated to construct a metal-organic complex precursor solution; the precursor solution is reacted at a specific temperature to make the metal-organic complex molecules undergo a complex chemical rearrangement and bonding process to form an ordered crystal structure, namely Fe2(CoNi)-MOF; the Fe2(CoNi)-MOF and tellurium powder are calcined at a high temperature in a H2 / Ar mixed gas to generate a series of synergistic reactions to generate the medium-entropy metal telluride. The medium-entropy metal telluride prepared by the application has high efficient catalytic hydrogen evolution and oxygen evolution potential in a water electrolysis hydrogen production reaction, can greatly improve the catalytic efficiency and reaction kinetic characteristics, and is used for preparing a water electrolysis hydrogen production catalyst.

Visible and infrared radiation photothermoelectric effect photodetectors are provided. The photodetectors are formed on substrates having a low thermal diffusivity of less than 0.05 mm2 / sec. A thermoelectric metal chalcogenide film is formed on the low thermal diffusivity substrate. At least two symmetric electrodes are formed on the thermoelectric metal chalcogenide film such that the thermoelectric metal chalcogenide film forms a channel between the electrodes. The photodetector has a responsivity of at least approximately 65 V W−1 for 1550 nm illumination and a response time less than approximately ˜60 ms. The photodetector photoresponse is tunable via manipulation of local illumination. Examples of photodetectors use Bi2Se3, Bi2Te3, and SnSe2 on flexible polymeric substrates. By using large-area thermoelectric films with a photothermal detection mechanism, and modulating responsivity via thermal coupling, photodetector arrays for wearable electronics and integrated optoelectronic circuits may be created.

The present application relates to the technical field of all-solid-state batteries, and particularly relates to a silicon-based composite negative electrode of an all-solid-state battery, a preparation method and application. The present application mainly solves the problem of kinetic retardation in the cycle process of the existing silicon negative electrode. The composite silicon-based material is mainly based on in-situ mechanical solid-phase conversion reaction of silver metal chalcogenide (or halide) compound and silicon. By adding Ag2S or AgF in the ball milling process, the construction of Ag metal nanodomains can be realized, the ion / electron conductor network is constructed, and the ion / electron transmission kinetics of Si is greatly enhanced.

Biomineralization—the synthesis of inorganic materials using proteins—has recently gained interest as a low cost, green route for the production of metal chalcogenide semiconductor nanocrystals. Typical biomineralization approaches rely on proteins or biomolecules identified from organisms which possess a native biomineralization response. Disclosed herein is an alternative biomineralization approach for synthesizing metal chalcogenide nanocrystals which uses an artificially designed de novo protein. De novo proteins are non-natural proteins, allowing for facile modification of the protein through the tuning of amino acids within the sequence. This de novo protein was employed to produce size-controlled populations of semiconductor nanocrystals, with properties consistent with those produced using traditional routes.