61 results about "Metal chalcogenides" patented technology

A grease composition that includes at least an oil-based medium, a thickener, and a fullerene-like nano-structure. The fullerene-like nano-structure includes a plurality of layers each comprised of a metal chalcogenide composition has a molecular formula of MX2, where M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.

The invention discloses a preparation method of a metal chalcogenide crystal film, and belongs to the field of semiconductors. According to the preparation method of the metal chalcogenide crystal thin film, the liquid metal is placed in the reaction tank, so that trace metal atoms generated by the surrounding liquid metal can be additionally introduced into the reaction tank where the metal chalcogenide amorphous thin film is located during annealing; the metal-rich liquid interface can be formed on the metal chalcogenide amorphous film, the metal chalcogenide amorphous film can be promoted to be recrystallized into a crystal structure with high crystallinity on the metal-rich liquid interface by reducing surface energy and enhancing atomic diffusion, and then under the driving of solid-liquid-solid growth, the metal chalcogenide amorphous film can be formed into a crystal structure with high crystallinity. And finally, the wafer-level, pure-phase and thickness-controllable metal chalcogenide crystal film is obtained.

Systems and methods that utilize a separator coated by particles for Li dendrite detection in an ordinary two-electrode battery system. The particles can be red phosphorus (RP) particles and / or other particles that are poor electronic conductors, are able to react with Li, and will form an insoluble product with Li, such as silicon, germanium, arsenic, metal oxides, metal halides, metal chalcogenides, chalcogenides, and LiMxEyOz (M=metal, E=nonmetal, O=oxygen, x≥0, y≥0, z≥0). These other particles can be used by themselves or in combination with one another. No additional electrode is needed, and the presence of Li dendrites can be detected simply based on the voltage profile during the charging step.

The invention discloses a method for growing graphene on the surface of a metal chalcogenide and application, and belongs to the technical field of low-dimensional material growth. The invention aims to solve the problems that the preparation of a large-area, atomic-scale, flat and defect-free continuous heterojunction thin film cannot be realized by the existing method, and the application of the heterojunction thin film in an actual device is limited. According to the method for growing the graphene on the surface of the metal chalcogenide, the high-quality graphene can be directly grown on the surface of the metal chalcogenide by optimizing interface engineering and a carbon source supply strategy, so that an atomic-scale flat and defect-free continuous film is obtained; the graphene can be directly integrated into a device without an additional transfer step, and pollution and damage to the graphene and the substrate in the transfer process are effectively reduced or avoided. Besides, the method has the capability of simultaneously growing on a plurality of substrates, is high in process expandability, provides feasibility for large-scale production, and has a good industrial application prospect.

This application discloses a two-dimensional flexible biochemical sensor, its fabrication method, and its application, relating to the field of biochemical sensors. It comprises a substrate, a gate electrode layer, a dielectric layer, a mixed-phase transition metal chalcogenide (MTC) layer, and a MTC pn junction layer stacked sequentially. Electrode layers, both connected to the mixed-phase MTC layer and the MTC pn junction layer, are further disposed on the latter. Both the mixed-phase MTC layer and the MTC pn junction layer comprise the same MTC compound. The gate electrode layer is used to regulate the current in the mixed-phase MTC layer, and the MTC pn junction layer is used to sense biochemical signals and generate changing currents. This application is beneficial for improving the sensitivity and response speed of biochemical sensors.

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid film, the method comprising: forming a metal chalcogenide quantum dot solid film; performing an n-type doping process on a plurality of metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid film to make them exhibit intraband absorption, the process including partially replacing chalcogen element atoms with halogen atoms in the plurality of metal chalcogenide quantum dots, and disposing a substance on the plurality of metal chalcogenide quantum dots to avoid oxygen p-type doping of the metal chalcogenide quantum dots. The present invention also relates to an optoelectronic device, the optoelectronic device comprising: an n-type doped metal chalcogenide quantum dot solid film (A) obtained according to the method; and a first electrode (E1) and a second electrode (E2) physically contacting two corresponding spaced-apart regions of the film (A).

The present invention belongs to the field of nanomaterial technology, and provides a bimetallic chalcogenide composite material, and a preparation method and application thereof. The composite material of the present invention includes a two-dimensional layered carrier, and a first metal chalcogenide and a second metal chalcogenide loaded on the two-dimensional layered carrier; the two-dimensional layered carrier is a MXene material, and the MXene material is an M metallized carbon material; the first metal chalcogenide is MX2; the second metal chalcogenide is AX2; wherein M is a first metal, A is a second metal, and X is a chalcogen element. The present invention uses a two-dimensional layered carrier as a carrier to load the bimetallic chalcogenide, which can make the structure of the bimetallic chalcogenide complete; and the two-dimensional layered carrier can form a stable heterogeneous interface with the bimetallic chalcogenide, which is beneficial to the charge transfer between different components and the rapid storage of lithium ions, so that the composite material can be better applied to the field of lithium storage negative electrodes.

The application belongs to the field of photocatalytic water decomposition, and relates to a hollow indium zinc sulfide composite catalyst material loaded with double cocatalysts and a preparation method and application thereof. The material is a composite material of double metal chalcogenide indium zinc sulfide and MnO2 and Ti3C2, the MnO2 has a hollow spherical structure, the indium zinc sulfide has a two-dimensional sheet structure, the indium zinc sulfide is coated on the outer surface of the MnO2 to form a composite spherical structure, and the Ti3C2 is attached to the surface of the composite spherical structure. The catalyst material not only has a higher specific surface area to provide more surface active sites, but also can enhance the refraction and reflection of light, thereby improving the utilization efficiency of light. The MnO2 and the Ti3C2 can be used as hole-type and electron-type cocatalysts respectively, and the unique carrier transport path thereof promotes the separation and transfer of photo-generated carriers, thereby enhancing the photocatalytic hydrogen production and benzyl alcohol oxidation performance of the material.

The application belongs to the technical field of solar cells, and relates to a CdTe thin film cell with a window layer of a multilayer cyclic composite structure and a preparation method thereof. The CdTe thin film cell comprises a glass substrate, a transparent conductive layer, a buffer layer, a window layer, an absorption layer, a back contact layer and a metal electrode layer which are arranged in layers. The window layer is of a multilayer cyclic composite structure, and the material of a cyclic unit comprises a metal chalcogenide compound. The window layer with the multilayer cyclic composite structure optimizes a photon transmission path, avoids the generation of pinhole phenomenon of the window layer, prevents short circuit and current shunt of the cell, and significantly improves the conversion efficiency of the solar cell.

The invention relates to the technical field of preparation of inorganic nano materials, and discloses a preparation method of a single-layer 1T-phase transition metal chalcogenide quantum sheet material, which mainly comprises the following steps: preparing a transition metal chalcogenide nano powder material by adopting a common hydrothermal or solvothermal method; the preparation method comprises the following steps: preparing a suspension of 1T-phase chalcogenide by a method of combining ion intercalation with liquid phase stripping; and carrying out centrifugal purification on the dispersion liquid obtained by stripping to obtain a suspension of the single-layer 1T-phase chalcogenide quantum sheet material, and further, carrying out cleaning, drying and other steps to obtain the single-layer 1T-phase chalcogenide quantum sheet powder material. The process is simple, the cost is low, the single-layer 1T-phase chalcogenide quantum sheet material can be efficiently prepared, the specific surface area of the product is high, the electrochemical activity is high, and a two-dimensional quantum sheet material with the characteristics of high activity, high specific surface area and the like can be provided for application of various energy storage and energy conversion devices such as supercapacitors, ion batteries, catalysis and the like.

The present invention relates to a quantum dot population comprising metal chalcogenide quantum dots, wherein the metal chalcogenide quantum dots comprise metal thiolate ligands. The present invention also relates to a method for obtaining the quantum dot population of the invention, and to an optoelectronic device comprising the quantum dot population.

Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a stack of metal chalcogenide nanoribbons extending between a source and drain and contacted by a gate structure. The metal chalcogenide nanoribbons may be recrystallized using a local laser anneal treatment and / or a dopant may be applied, outside of a channel region of the metal chalcogenide nanoribbons, using a local laser treatment in the presence of a precursor including the dopant.

A metal chalcogenide monocrystalline thin film and a preparation method therefor, belonging to the field of materials. The metal chalcogenide single-crystal thin film comprises multiple layers of rhombohedral or hexagonal metal chalcogenide monocrystalline grains stacked sequentially, the metal chalcogenide single-crystal grains in each layer being unidirectionally oriented, and the unidirectional orientation directions of any two adjacent layers of metal chalcogenide single-crystal grains being parallel. By means of cooperation of the described multiple layers of unidirectional phase-structured metal chalcogenide single-crystal grains stacked in parallel, the metal chalcogenide monocrystalline thin film combines advantages such as high uniformity, high quality, wafer scale, phase purity and controllable thickness.

The application discloses a ternary metal telluride bifunctional water hydrogen production catalyst and a preparation method. x (CoNi)‑MOF; and then the Fe x (CoNi)Te x is loaded on the foam nickel to obtain a catalyst material Fe x (CoNi)Te x (CoNi)Te x (CoNi)Te x@ NF, wherein Fe2(CoNi)Te @ NF has excellent HER and OER catalytic activity, has rich active sites, and has excellent characteristics such as low overpotential, excellent kinetics, small impedance and good cycle stability. The application provides a high-efficiency non-noble metal catalyst with low cost and excellent catalytic activity for water electrolysis hydrogen production, and can effectively promote the commercialization process of hydrogen production technology.

This invention relates to an oxidation-induced lattice softening etching method and patterning method for metal chalcogenide layers, and a method for fabricating transistor devices. The oxidation-induced lattice softening etching method of this invention includes: (A1) plasma treatment of the metal chalcogenide layer in an atmosphere containing O2 and / or O3, wherein the metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is sulfur, selenium, or tellurium, and n is 1 to 4; (A2) Plasma etching is performed on the oxidized metal chalcogenide layer in an inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for plasma etching of the exposed, unoxidized substrate in the same atmosphere. The patterning method and transistor device fabrication method of the present invention are based on this etching method.

Provided are a radiation-sensitive resist composition and a pattern formation method using the same, wherein the radiation-sensitive resist composition includes an ionic salt (A) including an organic cation (b) and an anion (a) which has a metal chalcogenide cluster structure, and a solvent (B), and a content of the ionic salt (A) in a total solid content of the radiation-sensitive resist composition is in a range of about 20 mass % to about 100 mass %.

To provide organometallic photoresist compositions and methods to form photoresist coatings and patterns using the compositions.SOLUTION: There is described patterning with UV and EUV light using organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. There are described corresponding precursor solutions, structures and methods.SELECTED DRAWING: None

A radiation-sensitive resist composition including an ionic salt (A); and a solvent (B). The ionic salt (A) including an ion (a) and a counter ion (b); the ion (a) having a metal chalcogenide cluster structure; and the counter ion (b) having a charge counter to a charge of the ion (a). The ion (a) including a halogen atom and at least one metal atom selected from Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.

Cathode active material layers and methods are disclosed. The cathode active material layer includes a metal chalcogen, an electroactive sulfur conversion cathode material, and an electroactive selenium conversion cathode material. The cathode active material layer includes the metal chalcogen in a weight ratio (w / w) of between 5% and 75%, the electroactive sulfur conversion cathode material in a weight ratio (w / w) of between 15% and 75%, and the electroactive selenium conversion cathode material in a weight ratio (w / w) of between 2% and 25%.

The present disclosure provides a coated article comprising a substrate selected from a metal, a metal atom-containing material, or a ceramic material, wherein the substrate is at least partially coated with a polymeric carbon nitride (CN) layer. The coated article may comprise a metal chalcogenide, a chalcogen-doped metal oxide, or a chalcogen-containing ceramic material. The present disclosure also provides processes for the preparation of the coated articles and uses thereof.

Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.

The invention relates to the technical field of aerogel preparation methods, in particular to a method for synthesizing metal chalcogenide cluster-based aerogel, which is prepared according to the following steps: at room temperature, uniformly mixing a metal acetylacetonate formamide solution with a metal chalcogenide nanocluster solution, reacting, and aging to obtain the metal chalcogenide cluster-based aerogel. The preparation method comprises the following steps: rapidly freezing with liquid nitrogen, heating, unfreezing and melting to obtain metal chalcogenide cluster-based wet gel, carrying out solvent exchange, and carrying out vacuum freeze-drying treatment to obtain the metal chalcogenide cluster-based aerogel based on the main group metal chalcogenide nanocluster and the transition metal TM. The method disclosed by the invention is relatively rapid, simple and convenient, time and equipment cost are greatly saved, large-scale industrial production is facilitated, and the method has wide application prospects in the fields of catalysis, adsorption, construction of Li ion batteries and sensing devices and the like.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm / sq.

Disclosed are a metal chalcogenide nanostructure comprising a nanowire and a branch shape, a method for manufacturing same, and an electrochemical device comprising same. The method for manufacturing a metal chalcogenide nanostructure comprising a nanowire and a branch shape may comprise: a first step of growing a WO2.9 nanowire on a substrate by vapor deposition of a WO3 precursor; a branch growth step of selectively growing a MoO3-x branch on the WO2.9 nanowire by vapor deposition of a MoO3 precursor; and a second step of substituting at least a portion of the oxygen in the nanowire and the branch with chalcogen by exposing the nanowire and the branch to a chalcogen environment.

The invention discloses a symmetric and asymmetric supercapacitor. The symmetric supercapacitor includes: a first electrode; an electrolyte; and a second electrode. The first and second electrodes include a nanostructure of a carbon-based material and a metal chalcogen compound, where the metal is selected from the group consisting of Cu, Va, Ni, Fe, Ag, Co, Mn, Sn, and any combination thereof, and the chalcogen is selected from the group consisting of Te, Se, and S. The asymmetric supercapacitor includes: a substrate; a first electrode comprising a first carbon-based material and a first nanostructure of a metal chalcogen compound wherein the metal is selected from Cu and Sn and the chalcogen is selected from Te, Se and S; an electrolyte; and a second electrode comprising a second carbon-based material.

Presented herein is a cathode material for a carbon-free (including relatively carbon-free) cathode, the cathode material comprising (i) sulfur and / or a lithium sulfide and (ii) a different, non-carbon electroactive material such as a metal chalcogenide. In certain embodiments, it is found that the carbon-free cathode material facilitates improved ion transport while maintaining satisfactory mechanical stability and electrical connection of the cathode without use of conductive carbon additives.

The invention belongs to the technical field of solar cells, and relates to a CdTe thin film cell with a window layer of a multi-layer cyclic composite structure and a preparation method of the CdTe thin film cell, the CdTe thin film cell comprises a glass substrate, a transparent conductive layer, a buffer layer, a window layer, an absorption layer, a back contact layer and a metal electrode layer which are stacked; wherein the window layer is of a multi-layer cyclic composite structure, and the material of a cyclic unit comprises a metal chalcogenide. By adopting the window layer with the multi-layer cyclic composite structure, a photon transmission path is optimized, a pinhole phenomenon of the window layer is avoided, short circuit and current shunting of the cell are prevented, and the conversion efficiency of the solar cell is remarkably improved.

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and / or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.