159 results about "Metal carbonyl" patented technology

A method and apparatus is described for reducing CO poisoning of a thin metal film formed on a substrate using a metal carbonyl precursor. The thin metal film is formed on the substrate resting on a substrate holder in a thin film deposition system. The substrate holder comprises a shield ring positioned on a peripheral edge of the substrate holder and configured to surround the peripheral edge of the substrate, whereby the shield ring reduces the production of CO by-products at the peripheral edge of the substrate.

A process of preparing individually-isolated, carbon-coated nanoscale metal particles is disclosed. The process is effected by sonicating a mixture of a metal carbonyl and a hydrocarbon solvent that is selected so as to polymerize during sonication. Air-stable and aqueous solution-stable, carbon-coated nanoscale metal particles and a process of preparing same are also disclosed.

A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

A method of plasma etching comprises using a primary etchant of carbon monoxide gas to etch a transition metal or transition metal compound and to form a volatile by-product of metal carbonyl.

A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber, and exposing the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process. The deposition system contains a substrate holder configured for supporting and heating a substrate in a process chamber having a vapor distribution system, a precursor delivery system configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system, a dilution gas source configured for adding a dilution gas to the process gas in the process chamber, and a controller configured for controlling the deposition system during exposure of the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.

A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

The methods of the present invention comprise the steps of: providing a feedstock stream comprising an epoxide and carbon monoxide; contacting the feedstock stream with a metal carbonyl in a first reaction zone to effect conversion of at least a portion of the provided epoxide to a beta lactone; directing the effluent from the first reaction zone to a second reaction zone where the beta lactone is subjected to conditions that convert it to a compound selected from the group consisting of: an alpha beta unsaturated acid, an alpha beta unsaturated ester, an alpha beta unsaturated amide, and an optionally substituted polypropiolactone polymer; and isolating a final product comprising the alpha-beta unsaturated carboxylic acid, the alpha-beta unsaturated ester, the alpha-beta unsaturated amide or the polypropiolactone.

The present invention provides a process for obtaining fullerene-like metal chalcogenide nanoparticles, comprising feeding a metal precursor (INi) selected from metal halide, metal carbonyl, organo-metallic compound and metal oxyhalide vapor into a reaction chamber (12) towards a reaction zone to interact with a flow of at least one chalcogen material (IN2) in gas phase, the temperature conditions in said reaction zone being such to enable the formation of the fullerene-like metal chalcogenide nanoparticles product. The present invention further provides novel IF metal chalcogenides nanoparticles with spherical shape and optionally having a very small or no hollow core and also exhibiting excellent tribological behavior. The present invention further provides an apparatus for preparing various IF nanostructures.

The methods of the present invention comprise the steps of: providing a feedstock stream comprising an epoxide and carbon monoxide; contacting the feedstock stream with a metal carbonyl in a first reaction zone to effect conversion of at least a portion of the provided epoxide to a beta lactone; directing the effluent from the first reaction zone to a second reaction zone where the beta lactone is subjected to conditions that convert it to a compound selected from the group consisting of: an alpha beta unsaturated acid, an alpha beta unsaturated ester, an alpha beta unsaturated amide, and an optionally substituted polypropiolactone polymer; and isolating a final product comprising the alpha-beta unsaturated carboxylic acid, the alpha-beta unsaturated ester, the alpha-beta unsaturated amide or the polypropiolactone.

The present invention encompasses catalysts for the carbonylation of heterocycles such as ethylene oxide, as well as methods for their use. The catalysts feature Lewis acidic metal complexes having one or more tethered metal-coordinating groups in combination with at least one metal carbonyl species. In preferred embodiments, the inventive catalysts have improved stability when subjected to product separation conditions in continuous ethylene oxide carbonylation processes.

Disclosed are polymerization systems and methods for the formation of polyesters from epoxides and carbon monoxide. The inventive polymerization systems feature the combination of metal carbonyl compounds and polymerization initiators and are characterized in that the molar ratios of metal carbonyl compound, polymerization initiators and provided epoxides are present in certain ratios.

The present disclosure provides novel methods of making aluminum complexes with utility for promoting epoxide carbonylation reactions. Methods include reacting neutral metal carbonyl compounds with alkylaluminum complexes.

A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.

A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber, and exposing the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process. The deposition system contains a substrate holder configured for supporting and heating a substrate in a process chamber having a vapor distribution system, a precursor delivery system configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system, a dilution gas source configured for adding a dilution gas to the process gas in the process chamber, and a controller configured for controlling the deposition system during exposure of the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

The present invention is directed to processes from producing beta-lactone and beta-lactone derivatives using heterogenous catalysts. In preferred embodiments of the present invention, the processes comprise the steps: passing a feed stream comprising an epoxide reagent and a carbon monoxide reagent to a reaction zone; contacting the epoxide reagent and the carbon monoxide reagent with a heterogenous catalyst to produce a beta-lactone product in the reaction zone; and removing the beta-lactone product from the reaction zone. In preferred embodiments, the heterogenous catalyst comprises a solid support containing a cationic Lewis acid functional group and a metal carbonyl compound comprising at least one of anionic metal carbonyl compound or a neutral metal carbonyl compound. In certain preferred embodiments, the epoxide reagent and carbon monoxide reagent have a biobased content.

Metal carbonyls are used in combination with at least one guanylate cyclase stimulant / stabilizer to deliver CO having biological activity, for example vasodilatation and inhibition of platelet aggregation. The two components may be administered simultaneously or sequentially. A particular described combination is tricarbonylchloro(glycinato)ruthenium(II) and the drug YC-1.

Metal carbonyls are used to deliver CO to organs to limit post-ischaemic damage. The organ may be extracorporeal, e.g. for use in a transplant, or may be an isolated organ inside or attached to the body but isolated from the blood flow. The carbonyl preferably has one or more other ligands other than CO, such as amino acids, to modulate the CO release property and solubility.

The present invention describes a metal precursor solution and metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from -diketonates, -ketoiminates, -diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

The invention discloses a catalyst for treating organic wastewater and a preparation method thereof. The catalyst is a metal carbonyl loaded catalyst, a precursor of the catalyst is one or a combination of ruthenium carbonyl and cobalt carbonyl, a second component Ce or Fe is added at the same time, and a carrier of the catalyst is selected from one or a compound oxide of active carbon, gamma-Al2O3 and TiO2. The catalyst can be used for oxidizing and degrading different organic matters with various concentrations in water under a milder condition so as to greatly reduce COD (Chemical Oxygen Demand) in wastewater and improve the removal efficiency of the COD in the wastewater.

A catalyst for the conversion of carbon monoxide comprising a support having a predetermined pore size and a metal capable of forming a metal carbonyl species is described. In one embodiment, the catalyst of the present invention comprises a mordenite, beta, or faujasite support and ruthenium metal.

A method and integrated system are provided for purifying and delivering a metal carbonyl precursor utilized to process a substrate. The method includes providing the metal carbonyl precursor containing un-reacted metal carbonyl precursor and metal-containing impurities in a metal precursor vaporization chamber containing a precursor collection plate, evacuating the metal precursor vaporization chamber, pressurizing the metal precursor vaporization chamber with a CO-containing gas, vaporizing the un-reacted metal carbonyl precursor, and condensing the vaporized un-reacted metal carbonyl precursor as a purified metal carbonyl precursor on the precursor collection plate. The method may further include vaporizing the purified metal carbonyl precursor, and delivering a process gas containing the vapor of the purified metal carbonyl precursor by flowing a gas containing CO through the metal precursor vaporization chamber to a deposition system configured to expose a substrate to the process gas.

A method of purifying a metal carbonyl precursor in a metal precursor vaporization system where the metal carbonyl precursor comprises a metal particulate impurity. The method includes flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to separate the metal carbonyl precursor from the metal particulate impurity and to transfer the metal carbonyl precursor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system, where an amount of the metal particulate impurity is lower in the precursor collection system than in the precursor vaporization system and the precursor collection system is maintained at a lower temperature than the metal precursor vaporization system. A metal carbonyl precursor parameter may be monitored to determine a status of the metal carbonyl precursor and the need for purifying the metal carbonyl precursor.

The invention discloses a method for preparing a quantum dot of a transitional metal chalcogenide compound and belongs to the field of preparing functional nanomaterials by colloidal chemical methods. The method disclosed by the invention comprises the following steps: mixing a metal carbonyl compound and trioctylphosphine oxide, heating and dissolving the mixture as a metal source precusor, by taking octadecene as a reaction solvent, heating the mixture under inert gas protection to reaction temperature, and preparing a metal source reaction system; by taking organic phosphorus as a coorinating solvent, preparing non-metal source sulfur powder, selenium powder or tellurium powder into a precusor solution; injecting the non-metal source solution into the metal source reaction system under inert gas protection and maintaining the reaction temperature and carrying out a heating reaction; and carrying out high speed centrifugal separation, and adding a mixed solution of n-butylamine / n-hexane into the obtained solid product to obtain a quantum dot material of the transitional metal chalcogenide compound in a collide dispersing state. The preparation method for the quantum dot material of the transitional metal chalcogenide compound disclosed by the invention is good in universality, fast in reaction speed, high in reaction yield, simple to operate, mild in reaction condition and easy for large-scaled production.

The invention discloses an environmental-friendly type polyurethane non particle spraying material used in stadium ground layer, which is formed by the mixing of component A and component B; wherein, the weight proportion of component A and component B is 1:3; the component A is obtained by mixing diphenylmethane diisocyanate and polyether glycol according to certain proportion; the component B is obtained by mixing polyether-tribasic alcohol, polyether glycol, dry process montmorillonite clay, 3, 5-methyl-sulfide base tolylene diamine, trimethylolpropane, epoxy resin, two-octyl, silica dioxide powder, calcium bicarbonate, organobentonite, iron oxide red or tartrazine-phthalo green mixture and metal carbonyl carboxylate according to certain proportion. The invention also discloses a preparation method of the material, which includes the steps: first preparing the component A and the component B respectively in specific condition, and mixing and stirring the component A and the component B to obtain the material of the invention. As the material of the invention contains no TDI and MOCA, the polyurethane non particle spraying material has no toxicity and safety hidden danger, and is an environmental-friendly material.

The present invention relates to a catalyst for removing a metal carbonyl which comprises a nickel-containing catalyst component and copper, said copper being present in an amount of 0.001 to 250% by weight in terms of metallic copper on the basis of a weight of the nickel contained in the catalyst component. The catalyst may further contain, if required, zinc oxide, a clay mineral, or a clay mineral supporting at least one element having an average particle diameter of not more than 50 nm which is selected from the group consisting of ruthenium, rhodium, iridium, platinum, gold, silver, palladium, nickel, cobalt, copper, iron, zinc, vanadium and manganese. When using the catalyst, it is possible to produce a mixed reformed gas from hydrocarbons, and remove a metal carbonyl in a reforming reaction field.