Metal precursor solutions for chemical vapor deposition

A technology of chemical vapor deposition and precursor solution, which is applied in organic chemistry, gaseous chemical plating, metal material coating technology, etc., and can solve problems such as inappropriate stoichiometric ratio of deposited film

Inactive Publication Date: 2009-01-14
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If, during the manufacturing process, reactions convert metal sources, including precursors, into insoluble or non-volatile products, or into materials of di

Method used

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  • Metal precursor solutions for chemical vapor deposition
  • Metal precursor solutions for chemical vapor deposition
  • Metal precursor solutions for chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Prepare 1.0M solution of titanium isopropoxide in N-methyl-2-pyrrolidone

[0068] In a 2 mL vial, a pale orange solution of titanium isopropoxide (0.10 g, 0.35 mmol) and 0.35 mL of N-methyl-2-pyrrolidone (NMP) was prepared. The solution was kept at room temperature overnight and did not show any noticeable changes. figure 1 is the TGA of a 1.M solution of titanium isopropoxide in N-methyl-2-pyrrolidone, which suggests a smooth gasification process in the temperature range of 20-400°C. This vaporization behavior suggests that this solution can be applied to chemical vapor deposition or atomic vapor deposition by bubbling or direct liquid injection.

Embodiment 2

[0070] Prepare 0.1M tris(2,2,6,6-tetramethyl-3,5-heptanedionylated)lanthanum in N-methyl-2-pyrrolidone

[0071] In a 2mL vial, prepare La(thd) 3 (0.05 g, 0.07 mmol) and 0.78 mL of a clear solution of NMP. figure 2 is the TGA of a 0.1M solution of tris(2,2,6,6-tetramethyl-3,5-heptanedionylated)lanthanum in N-methyl-2-pyrrolidone, which shows that there are two gasification processes , the first is mainly of NMP and the second is of tris(2,2,6,6-tetramethyl-3,5-heptanedionylated)lanthanum. This vaporization behavior indicates that this solution can only be used for chemical vapor deposition or atomic vapor deposition by direct liquid injection.

Embodiment 3

[0073] Preparation of tetra(ethylmethylamino)zirconium solution in N-methyl-2-pyrrolidone

[0074] Three NMP solutions of tetrakis(ethylmethylamino)zirconium (TEMAZ) were prepared according to Table 1. Both are clear yellow solutions.

[0075] Table 1

[0076] sample

[0077] image 3 TGA graphs of the solutions are shown, suggesting that direct liquid injection with lower concentrations is preferred.

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Abstract

The present invention describes a metal precursor solution and metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from -diketonates, -ketoiminates, -diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

Description

[0001] Cross References to Related Applications [0002] This patent application claims the benefit of US Provisional Patent Application Serial No. 60 / 911,970, filed April 16, 2007. technical field [0003] The present invention relates to metal precursor solutions for chemical vapor deposition. Background technique [0004] The semiconductor manufacturing industry has long used metal-containing source precursors for chemical vapor deposition processes, including atomic layer deposition, to produce conformal metal-containing films on substrates, such as silicon, using these metal sources containing precursors. , silicon oxide, metal nitride, metal oxide and other metal-containing layers. In this fabrication method, a particularly beneficial method of delivering precursors containing multiple sources is to take either a neat liquid source containing a liquid metal precursor or a solution of a metal source precursor dissolved in a solvent, flashed to vapor The mixture is co...

Claims

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Application Information

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IPC IPC(8): C23C16/18C07F1/08C07F19/00
Inventor 雷新建L·J·奎恩J·A·T·诺曼W·F·小伯戈恩G·S·拉尔M·厄尔曼D·P·斯彭斯
Owner AIR PROD & CHEM INC
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