6953 results about "Lanthanum" patented technology

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX_Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

A ceramic material that can exhibit sufficient compactness and lithium (Li) conductivity to enable the use thereof as a solid electrolyte material for a lithium secondary battery and the like is provided. The ceramic material contains aluminum (Al) and has a garnet-type crystal structure or a garnet-like crystal structure containing lithium (Li), lanthanum (La), zirconium (Zr) and oxygen (O).

High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are fabricated by forming an ultra-thin catalytic metal layer, e.g., a monolayer thick layer of Pd or Pd, on a Si-based semiconductor substrate, electrolessly plating on the catalytic layer comprising at least one refractory or lanthanum series transition metal or metal-based dielectric precursor layer, such as of Zr and/or Hf, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one high-k metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.

A process for selective formation of ethanol from acetic acid by hydrogenating acetic acid in the presence of first metal, a silicaceous support, and at least one support modifier. Preferably, the first metal is selected from the group consisting of copper, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, titanium, zinc, chromium, rhenium, molybdenum, and tungsten. In addition the catalyst may comprise a second metal preferably selected from the group consisting of copper, molybdenum, tin, chromium, iron, cobalt, vanadium, tungsten, palladium, platinum, lanthanum, cerium, manganese, ruthenium, rhenium, gold, and nickel.

Polymer nanocomposite implants with nanofillers and additives are described. The nanofillers described can be any composition with the preferred composition being those composing barium, bismuth, cerium, dysprosium, europium, gadolinium, hafnium, indium, lanthanum, neodymium, niobium, praseodymium, strontium, tantalum, tin, tungsten, ytterbium, yttrium, zinc, and zirconium. The additives can be of any composition with the preferred form being inorganic nanopowders comprising aluminum, calcium, gallium, iron, lithium, magnesium, silicon, sodium, strontium, titanium. Such nanocomposites are particularly useful as materials for biological use in applications such as drug delivery, biomed devices, bone or dental implants.

The invention provides a high selectivity catalyst used for catalyzing and completely oxidizing formaldehyde with low concentration at room temperature. The catalyst can catalyze formaldehyde completely so as to lead the formaldehyde to be converted into carbon dioxide and water at room temperature. In addition, the conversion rate of formaldehyde remains 100% within a long period of time, without complex auxiliary facilities such as light source, a heating oven and the like, and external conditions. The catalyst comprises three parts which are inorganic oxide carrier, noble metal component and auxiliary ingredient. Porous inorganic oxide carrier is one of cerium dioxide, zirconium dioxide, titanium dioxide, aluminium sesquioxide, tin dioxide, silicon dioxide, lanthanum sesquioxide, magnesium oxide and zinc oxide or the mixture thereof or composite oxide thereof, zeolite, sepiolite and porous carbon materials. The noble metal component of the catalyst is at least one of platinum, rhodium, palladium, gold and silver. The auxiliary ingredient is at least one of the alkali metals of lithium, sodium, kalium, rubidium and cesium. The loading of the noble metal component used in the catalyst of the invention is 0.1 to 10% according to weight converter of metal elements and the selective preference is 0.3 to 2%. The loading of the auxiliary ingredient is 0.2 to 30% according to weight converter of metal elements and the selective preference is 1 to 10%. When the loading of the auxiliary ingredient is lower than 0.2% or higher than 30%, the activity of the catalyst for catalyzing and oxidizing formaldehyde at room temperature is decreased remarkably.

Amorphous lithium lanthanum zirconium oxide (LLZO) is formed as an ionically-conductive electrolyte medium. The LLZO comprises by percentage of total number of atoms from about 0.1% to about 50% lithium, from about 0.1% to about 25% lanthanum, from about 0.1% to about 25% zirconium, from about 30% to about 70% oxygen and from 0.0% to about 25% carbon. At least one layer of amorphous LLZO may be formed through a sol-gel process wherein quantities of lanthanum methoxyethoxide, lithium butoxide and zirconium butoxide are dissolved in an alcohol-based solvent to form a mixture which is dispensed into a substantially planar configuration, transitioned through a gel phase, dried and cured to a substantially dry phase.

Scintillator materials based on certain types of halide-lanthanide matrix materials are described. In one embodiment, the matrix material contains a mixture of lanthanide halides, i.e., a solid solution of at least two of the halides, such as lanthanum chloride and lanthanum bromide. In another embodiment, the matrix material is based on lanthanum iodide alone, which must be substantially free of lanthanum oxyiodide. The scintillator materials, which can be in monocrystalline or polycrystalline form, also include an activator for the matrix material, e.g., cerium. Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolytically plating a metal or metal-based dielectric precursor layer comprising at least one refractory or lanthanum series transition metal, on a semiconductor substrate, typically a silicon-based substrate, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one refractory or lanthanum series transition metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.

A stabilized catalyst support having improved hydrothermal stability, catalyst made therefrom, and method for producing hydrocarbons from synthesis gas using said catalyst. The stabilized support is made by a method comprising treating a crystalline hydrous alumina precursor in contact with at least one structural stabilizer or compound thereof. The crystalline hydrous alumina precursor preferably includes an average crystallite size selected from an optimum range delimited by desired hydrothermal resistance and desired porosity. The crystalline hydrous alumina precursor preferably includes an alumina hydroxide, such as crystalline boehmite, crystalline bayerite, or a plurality thereof differing in average crystallite sizes by at least about 1 nm. The crystalline hydrous alumina precursor may be shaped before or after contact with the structural stabilizer or compound thereof. The treating includes calcining at 450° C. or more. Preferred structural stabilizers can include cobalt, magnesium, manganese, manganese, zirconium, boron, aluminum, barium, silicon, lanthanum, oxides thereof, or combinations thereof.

This invention discloses materials for positive electrodes of secondary batteries and their methods of fabrication. Said materials comprise of granules of an active material for positive electrodes coated with an oxide layer. The active material is one or more of the following: oxides of lithium cobalt, oxides of lithium nickel cobalt, oxides of lithium nickel cobalt manganese, oxides of lithium manganese, LiCoO₂, LiNi_1-xCo_xO₂, LiNi_1/3Co_1/3Mn_1/3O₂, and LiMn₂O₄. The non-oxygen component in the oxide layer is one or more of the following: aluminum, magnesium, zinc, calcium, barium, strontium, lanthanum, cerium, vanadium, titanium, tin, silicon, boron, Al, Mg, Zn, Ca, Ba, Sr, La, Ce, V, Ti, Sn, Si, and B. Said non-oxygen component of the granules is between 0.01 wt. % to 10 wt. % of said granules of active material. The methods of fabrication for said materials includes the steps of mixing an additive and an active material for positive electrodes uniformly in water or solvent, evaporating said solvent or water, and heat treating the remaining mixture at 300° C. to 900° C. for between 1 hour to 20 hours. The additive is a compound of one or more of the following elements: aluminum, magnesium, zinc, calcium, barium, strontium, lanthanum, cerium, vanadium, titanium, tin, silicon, boron, Al, Mg, Zn, Ca, Ba, Sr, La, Ce, V, Ti, Sn, Si, and B where the element is between 0.01 wt. % to 10 wt. % of said active material. Using the materials of positive electrodes disclosed above or materials for positive electrodes fabricated in the methods disclosed above in batteries produces batteries with excellent cycling and high temperature properties.

A coating applied as a two layer system. The outer layer is an oxide of a group IV metal selected from the group consisting of zirconium oxide, hafnium oxide and combinations thereof, which are doped with an effective amount of a lanthanum series oxide. These metal oxides doped with a lanthanum series addition comprises a high weight percentage of the outer coating. As used herein, lanthanum series means an element selected from the group consisting of lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and combinations thereof, and lanthanum series oxides are oxides of these elements. When the zirconium oxide is doped with an effective amount of a lanthanum series oxide, a dense reaction layer is formed at the interface of the outer layer of TBC and the CMAS. This dense reaction layer prevents CMAS infiltration below it. The second layer, or inner layer underlying the outer layer, comprises a layer of partially stabilized zirconium oxide.

A nitrogen oxide storage material is disclosed which contains at least one storage component for nitrogen oxides in the form of an oxide, mixed oxide, carbonate or hydroxide of the alkaline earth metals magnesium, calcium, strontium and barium and the alkali metals potassium and caesium on a high surface area support material. The support material can be doped cerium oxide, cerium/zirconium mixed oxide, calcium titanate, strontium titanate, barium titanate, barium stannate, barium zirconate, magnesium oxide, lanthanum oxide, praseodymium oxide, samarium oxide, neodymium oxide, yttrium oxide, zirconium silicate, yttrium barium cuprate, lead titanate, tin titanate, bismuth titanate, lanthanum cobaltate, lanthanum manganate and barium cuprate or mixtures thereof.

The invention provides a high performance lithium ion battery anode material lithium manganate and a preparation method of the material. The lithium manganate is a doped lithium manganate LiMn2-yXy04 which is doped with one kind or a plurality of other metal elements X, wherein X element is at least one kind selected form the group of aluminium, lithium, fluorine, silver, copper, chromium, zinc, titanium, bismuth, germanium, gallium, zirconium, stannum, silicon, cobalt, nickel, vanadium, magnesium, calcium, strontium, barium and rare earth elements lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium, and y is larger than 0 but less than or equal to 0.11. The lithium ion battery anode material lithium manganate provided in the invention has extraordinary charge and discharge cycle performance both in the environments of normal temperature and high temperature. According to the invention, the preparation method of the material is a solid phase method, the operation is simple and controllable and the cost is low so that it is easy to realize large-scale productions.

The invention relates to a catalyst for preparing aromatic hydrocarbons by methanol conversion and a preparation method thereof, and mainly solves problems of complex technical route flow and low object product selectivity of a prior art. The catalyst comprises a) 20-80 parts of molecular sieve carrier, b) 0.1-20 parts of gallium element or oxide thereof carried by the molecular sieve carrier, c) 0.1-12 parts of lanthanum or phosphor element or oxide thereof, d) 20-80 parts of binder; and the molecular sieve comprises HZSM-5 and HMCM-22 in a mass ratio of 0.1-10:1. The invention also provides a preparation method of the catalyst. The above technical scheme well solves the problems and can be applied to industrial production of aromatic hydrocarbons by methanol conversion.

The invention relates to a catalyst for preparing aromatic hydrocarbon through methanol conversion and a preparation method thereof, and mainly solves the problems of complex technological process and low selectivity of the target product in the prior art. According to the invention, the catalyst comprises the following components of: by weight, a) 20-80 parts of a molecular sieve carrier; b) 0.5-12 parts of lanthanum element or its oxide which is carried on a); c) 0.5-10 parts of phosphor element or its oxide; d) 20-80 parts of a binder, wherein the molecular sieve comprises a mixture of HZSM-5 and at least one component selected from HZSM-11 or Hbeta molecular sieves; and the weight ratio of HZSM-5 to the at least one component selected from HZSM-11 or Hbeta is 0.1-10: 1. The technical scheme provided by the invention greatly solves the problems and can be used in the industrial production of aromatic hydrocarbon through methanol conversion.

The invention discloses a hydroisomerization catalyst, a preparation method and an application thereof. The preparation method comprises the following steps: a) providing a catalyst precursor containing a carrier, and a compound containing noble metals in the VIII group and a compound containing a second metal which are both supported on the carrier, wherein the two compounds hereinabove are both non-oxides, the second metal is one or more than two selected from the metal in the VB group, the metal in the VIB group, non-noble metal in the VIII group and lanthanum-series metals, the carrier containing mesoporous molecular sieve; and b) roasting the catalyst precursor in an atmosphere formed by a gas containing an oxidizing gas and a halogen-containing compound. The invention also discloses a hydroisomerization method for hydrocracked tail oil with the hydroisomerization catalyst. The hydroisomerization catalyst, when being used in the hydroisomerization for the hydrocracked tail oil, can be used for producing an isomerized product having high viscosity index and low pour point, which is suitable for being used as lubricant basic oil.

A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.

There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.