23 results about "Deposition pressure" patented technology

The invention relates to the technical field of surface coating preparation, and discloses a texture-based composite coating and a preparation method thereof.The method comprises the following steps that a TiN layer, an MT-TiCN layer, a bonding layer, a modified layer and an outermost TiN layer are sequentially deposited on the surface of a base body through a hot wall type chemical vapor deposition technology, the deposition process meets the following conditions: the deposition temperature is in a range of 900-1050 DEG C, and is gradually reduced in the deposition process; the deposition pressure is 50 to 200 mbar; the introduced mixed gas contains CO and the volume ratio of CO to CO is controlled to be 0.5-3; the volume ratio of the mixed gas is not higher than 92% and not lower than 80%; the modified layer comprises an Al purging modified layer and an oxidation modified layer and is used for controlling the texture and the grain size. According to the method, the particle size can be considered while the strong (006) texture coating is obtained, the particle size of the coating is smaller than or equal to 1 micron, and the excellent comprehensive performance is achieved.

The invention discloses a SiC-coated C nano whisker material as well as a preparation method and application thereof. The preparation method of the SiC-at-C nano whisker material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introducing the precursor and the carrier gas, stopping laser, then stopping introducing H2, vacuumizing the reaction chamber to be below 20Pa, and after the substrate material is cooled to room temperature, taking out the substrate material. The SiC-coated C nano whisker material prepared by the method has excellent electromagnetic shielding performance and flexibility, is simple in process, short in period and easy to scale, and has a wide application prospect in the field of electromagnetic shielding equipment.

The invention relates to the technical field of electro-deposition equipment, and provides a radioactive source auxiliary electro-deposition pressure stand and device.The pressure stand comprises a rack, a source table is arranged on the rack, and a supporting face used for supporting a radioactive source sheet is formed on the source table; the pressure mechanism is connected to the rack, and a pressing end facing the supporting surface is formed on the pressure mechanism; the pressure mechanism is slidably connected with the rack. The pressing end can get close to or get away from the supporting face along with sliding of the pressure mechanism. The pressure mechanism is connected with the driving mechanism through the transmission mechanism, and the transmission mechanism is used for converting driving of the driving mechanism into sliding of the pressure mechanism, so that the pressing end is close to or away from the supporting face. By means of the arrangement, a traditional connection mode of fastening through multiple screws is replaced, operation is easy and convenient, sealing reliability is high, operation efficiency can be further improved, in addition, the risk that workers make contact with electrolyte or an electro-deposition tank can be reduced, and safety is high.

The invention discloses a TOPCon photovoltaic cell and a preparation method thereof, and relates to the technical field of photovoltaic cells. The LPCVD furnace is a tubular diffusion furnace and is provided with a furnace mouth area, a furnace middle area and a furnace tail area; reaction gas outlets are respectively formed in the furnace mouth area, the furnace middle area and the furnace tail area; the method comprises the steps that in a deposition chamber of an LPCVD furnace, an n-step deposition process is adopted for preparing an amorphous silicon layer, n is larger than or equal to 2, and the deposition temperature of a furnace mouth area is not lower than the deposition temperature of a furnace middle area and the deposition temperature of a furnace tail area; the deposition temperature of the furnace mouth area in the ith step is not lower than the deposition temperature of the furnace mouth area in the (i + 1) th step, and i is an integer from 1 to n-1; the deposition pressure in the ith step is lower than that in the (i + 1) th step; the reaction gas flow of the furnace mouth area in the ith step is lower than the reaction gas flow of the furnace mouth area in the (i + 1) th step. According to the method, the amorphous silicon layer is deposited through multiple steps, and the deposition temperature, flow and pressure are cooperatively controlled, so that furnace mouth gas accumulation is effectively inhibited, the film thickness uniformity of the silicon wafer at the furnace mouth position is effectively improved, and the appearance white edge defect of the battery piece is eliminated.

A method of epitaxial deposition is disclosed. The method includes plasma pre-cleaning a substrate having openings with an aspect ratio of greater than 5:1. The plasma pre-cleaning is performed at pre-clean pressure of less than 5 Torr. The method also includes, after the plasma pre-cleaning, depositing a material in the openings using epitaxial deposition at a deposition pressure of about 700 Torr to about 800 Torr. In another embodiment, a method of gap filling using epitaxial deposition includes patterning a substrate with openings having an aspect ratio of 5:1. The method also includes plasma pre-cleaning the substrate, the plasma pre-cleaning being performed at a pre- clean pressure of about 1 Torr to about 5 Torr. The method also includes, after the plasma pre-cleaning, depositing a gap fill material in the openings using epitaxial deposition at a deposition pressure of about 700 Torr to about 800 Torr.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

The application relates to the technical field of surface coating preparation, and discloses a composite coating based on texture and a preparation method thereof, which comprises the following steps: adopting a hot-wall chemical vapor deposition process to sequentially deposit a TiN layer, an MT-TiCN layer, a bonding layer, a modification layer, a layer and an outermost TiN layer on the surface of a substrate, wherein: the layer is composed of three sub-layers, and the deposition process satisfies the following conditions: the deposition temperature is in the range of 900-1050 DEG C, and is gradually reduced during the deposition process; the deposition pressure is 50-200 mbar; the mixed gas contains CO and H2, and the volume ratio of CO to H2 is controlled to be between 0.5 and 3; the volume ratio of the mixed gas is not higher than 92% and not lower than 80%; the modification layer comprises an Al purging modification layer and an oxidation modification layer, and is used for controlling the texture and the grain size of the layer. The application can obtain a strong (006) texture coating, and meanwhile, the particle size is less than or equal to 1 micrometer, so that the comprehensive performance is relatively optimal.

The present invention discloses a method for in-situ growth of a thermal shock-resistant tantalum carbide coating on a carbon-based substrate. The specific steps are as follows: 1) placing the substrate in a deposition chamber of a laser chemical vapor deposition device; 2) evacuating the deposition chamber to below the vacuum threshold, introducing H2, a carbon source, and a carrier gas containing a tantalum source, Ar, and adjusting the deposition pressure and stabilizing it for 1 to 5 minutes; 3) turning on the laser to irradiate the substrate, heating it to the deposition temperature for deposition, and then turning off the carrier gas Ar and the laser after deposition. When the substrate temperature reaches 150°C, turning off the H2 and carbon source, and then evacuating the substrate. Waiting for the substrate to cool to room temperature, a tantalum carbide coating material is obtained on the substrate surface. The bottom of the porous tantalum carbide coating material provided by the present invention, which contacts the substrate, has a porous structure that can buffer thermal shock stress. The surface is composed of dense tantalum carbide, which can provide good protection for the substrate, significantly alleviate the problem of thermal expansion coefficient mismatch between the coating and the substrate, and improve the thermal shock resistance of the coating.

The invention discloses a SiCnw / Ni composite material as well as a preparation method and application thereof. The preparation method of the SiCnw / Ni composite material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introduction of the precursor and the carrier gas, closing the laser, then stopping introduction of H2, vacuumizing the reaction chamber to 20 Pa or below, taking out the substrate material after the substrate material is cooled to the room temperature, and electroplating nickel on the surface of the substrate material. The shielding effectiveness of the prepared SiCnw / Ni composite material reaches 69 dB (8-12 GHz) when the thickness is 0.39 mm, and the SiCnw / Ni composite material is good in flexibility, high in stability and wide in application prospect.

This invention provides a method for preparing an AlScN piezoelectric coating material with high mechanical properties and high temperature resistance. The method includes: using an alloy target composed of Al and Sc, forming an AlScN piezoelectric functional layer on a substrate surface via magnetron sputtering; and controlling the volume ratio of argon to nitrogen, temperature, sputtering power, deposition pressure, and target-substrate distance during magnetron sputtering to allow the AlScN piezoelectric functional layer to grow in multiple orientations during deposition. The AlScN piezoelectric coating material obtained by this invention exhibits excellent mechanical properties, temperature resistance, and corrosion resistance. When deposited on a substrate, this coating material can simultaneously generate longitudinal waves, longitudinal and transverse waves, and transverse waves to achieve defect detection and stress measurement in steel plates, welds, and steel pipes in various media. Furthermore, it exhibits long-term stable service capability under high temperature and harsh operating conditions without the need for a protective layer, meeting long-term usage requirements, facilitating mass production, and possessing promising prospects for promotion and application.

The utility model discloses a CVD (Chemical Vapor Deposition) tail gas outlet device which comprises a first chamber and a second chamber, the first chamber is positioned above the second chamber, the first chamber and the second chamber are separated by a thermal insulation layer, the thermal insulation layer is provided with a gas guide channel, and the gas guide channel is communicated with the first chamber and the second chamber; an air inlet is formed in a top plate of the first chamber, and an air outlet guide pipe is arranged on a bottom plate of the second chamber; a plurality of graphite plates are arranged in the first chamber and the second chamber, and a plurality of through holes are formed in the graphite plates; the plurality of graphite plates in the first chamber are arranged at intervals in the vertical direction, and the plurality of graphite plates in the second chamber are arranged at intervals in the vertical direction. The device can slow down the flow velocity of tail gas, improve the stability of deposition pressure in the reaction cavity, improve the deposition efficiency of byproducts in the device, and reduce the deposition of the byproducts in a vacuum pipeline, a filtering device and a vacuum pump.

The invention provides a single epitaxial filling method for a high-aspect-ratio groove, which comprises the following steps of: determining corresponding epitaxial deposition pressure according to the size relationship between epitaxial deposition temperature and groove deformation temperature, if the epitaxial deposition temperature is higher than the groove deformation temperature, the epitaxial deposition pressure is 150-400Torr, and if the epitaxial deposition temperature is lower than the groove deformation temperature, the epitaxial deposition pressure is 5-50Torr, the epitaxial deposition pressure is lower than the groove deformation temperature, and the epitaxial deposition pressure is lower than the groove deformation temperature. According to the method, the problems of cavity defects and groove deformation of the high-aspect-ratio groove in the epitaxial growth process can be solved, a single epitaxial filling method is adopted, the process is simple, and the growth efficiency is high.

The utility model relates to the technical field of plate heat exchanger inlet water filtering devices, and discloses an anti-deposition pressure-isolating heat exchange station plate heat exchanger inlet water filtering device which comprises a water inlet pipeline, a filter screen is detachably connected to the interior of the water inlet pipeline, and a slag discharging opening is formed in the bottom face of the water inlet pipeline. The bottom of the slag discharging opening is fixedly connected with a discharging pipe, the bottom of the discharging pipe is in threaded connection with a storage barrel, the interior of the storage barrel is fixedly connected with a drainage pipe, the interior of the storage barrel is provided with a filtering unit, and the bottom of the drainage pipe is detachably connected with a three-way connecting pipe. According to the utility model, through the cooperation of the slag discharge port, the discharge pipe, the storage barrel, the drain pipe, the filter unit, the three-way connecting pipe, the fixed plate and the water pump, impurities intercepted by the filter screen can be collected, and the phenomenon that the impurities are deposited at the bottom of the water inlet pipeline to affect the filtering effect of the filter screen and the passing rate of water flow is avoided.

A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

An apparatus and method for a continuous supply of feedstock for a friction stir additive manufacturing method has a rod supply system that transports feedstock segments to a shuttle. The rod supply system has actuators that are coupled to allow movement of the delivery point of the feedstock. The shuttle indexes the feedstock to be on axis with the spindle and rotates it to match the speed and orientation of the spindle before it makes contact with other feedstock currently being deposited. An upper thrust mechanism moves the feedstock from the shuttle to a one-way collet and applies deposition pressure through the collet while the collet raises. Once raised, the collet then applies deposition pressure to the feedstock and the upper thrust mechanism retracts so the shuttle can index again and present additional feedstock. The process can repeat to continuously supply feedstock until the workpiece is complete.

The application provides a preparation method of a high-temperature-resistant AlN piezoelectric coating material capable of exciting multiple ultrasonic waves, and comprises the following steps: forming an AlN piezoelectric functional layer on the surface of a substrate by using an Al target through magnetron sputtering; and controlling the volume ratio of argon and nitrogen, the temperature, the sputtering power, the deposition pressure and the target-substrate distance in the magnetron sputtering so that the AlN piezoelectric functional layer grows in multiple orientations during the deposition process. The AlN piezoelectric coating material prepared by the application has good mechanical properties, temperature resistance and corrosion resistance, and can ensure the long-term stable service ability of the AlN piezoelectric coating under high temperature and harsh working conditions without a protective layer, reduce the failure possibility caused by corrosion and other factors, and realize the accurate nondestructive measurement of the bolt pretightening force, or realize the steel substrate defect detection and stress measurement. The sputtering technology adopted by the application is a general technology in the industry, and the industrial production batch is easy to realize, the processing efficiency is high, and the production cost of the manufacturer can be greatly reduced.

The application discloses a kind of silicon-doped hafnium dioxide thin films and preparation method thereof, belong to the field of thin film material preparation.It is prepared: the powder precursor weighed is placed in precursor tank;Single crystal silicon substrate is placed in chemical vapor deposition device, vacuum and heating;Wherein: the target temperature of raw material tank is 200-250 DEG C, and the target temperature of substrate is 810-1100 DEG C, and both reach target temperature with same time;When reaching target temperature, precursor vapor is transported to the surface of single crystal silicon substrate with carrier gas, and reaction gas and dilution gas are input, and deposition pressure is adjusted, and reaction starts;Reaction is finished, and silicon-doped hafnium dioxide thin film is obtained, and contains tetragonal hafnium dioxide.The method can stably control the silicon doping amount of hafnium dioxide thin film, so as to control the content of tetragonal phase, and the obtained thin film structure is continuous and uniform, and the thickness is controllable, which provides a simple and efficient means for preparing tetragonal hafnium dioxide thin film by chemical vapor deposition method.

The embodiment of the invention provides a deposition method and a semiconductor structure, the method is applied to a TEL machine table with a chimney type rising gas inlet mode, the TEL machine table comprises a preset number of gas injection channels, and the method comprises the following steps: providing a wafer; under preset parameters, a silicon application layer with a preset thickness is deposited for the wafer, and the preset parameters include that the deposition pressure intensity ranges from 0.1 torr to 0.2 torr; the gas flow of the silicon source is 0.2 sml to 0.4 sml; the gas flow of the nitrogen is 40 sccm to 60 sccm; the thickness range of the preset thickness is 900 angstroms to 1200 angstroms; and after the silicon application layer is formed, taking out the wafer. According to the embodiment of the invention, the quality of the wafer is improved.

A method of epitaxial deposition is disclosed. The method includes plasma pre-cleaning a substrate having openings with an aspect ratio of greater than 5:1. The plasma pre-cleaning is performed at pre-clean pressure of less than 5 Torr. The method also includes, after the plasma pre-cleaning, depositing a material in the openings using epitaxial deposition at a deposition pressure of about 700 Torr to about 800 Torr. In another embodiment, a method of gap filling using epitaxial deposition includes patterning a substrate with openings having an aspect ratio of 5:1. The method also includes plasma pre-cleaning the substrate, the plasma pre-cleaning being performed at a pre-clean pressure of about 1 Torr to about 5 Torr. The method also includes, after the plasma pre-cleaning, depositing a gap fill material in the openings using epitaxial deposition at a deposition pressure of about 700 Torr to about 800 Torr.

The invention discloses a method for preventing a TOPCon solar cell boron diffusion furnace door flange from rusting. The problem of silicon wafer pollution caused by flange rusting is solved through environment control, hardware adjustment and technological parameter optimization. The method comprises the following specific steps: controlling the temperature and humidity of a workshop to be 23 + / -3 DEG C, 40-50%, and ensuring that no process cooling water leaks from a machine; the flow of flange cooling water is reduced from 7 L / min to 5 L / min, and a short air inlet pipe in a 1.8 m furnace is adopted to replace a long air inlet pipe; when the source is introduced, the nitrogen at the furnace mouth is adjusted to 700 sccm, the source-carrying nitrogen is adjusted to 5500 sccm, the boron chloride is adjusted to 120 sccm, the deposition pressure is increased to 220 mbar, and the post-oxygen temperature is reduced to 1020 DEG C. According to the method, the concentration of boron chloride is reduced from 4.88% to 1.76%, and a low-concentration shallow PN junction is formed. Through optimization, the service life of the flange is prolonged to more than 100 days, the yellowing abnormity of a silicon wafer is reduced, the maintenance period of a diaphragm pump is prolonged from 30 days to 50 days, the conversion efficiency of the battery is improved by more than 0.04%, and the method is suitable for a TOPCon battery boron diffusion process.

The invention discloses a low-stress PECVD (Plasma Enhanced Chemical Vapor Deposition) thin film preparation method based on stepwise deposition. The method comprises the following steps: preheating a to-be-deposited substrate placed in a deposition cavity at a preset temperature; depositing a film with a first predetermined thickness on the substrate to be deposited at a first deposition pressure, a first reaction gas flow ratio, a first radio frequency power and a first deposition rate; depositing a thin film with a second predetermined thickness on the thin film with the first predetermined thickness at a second deposition pressure, a second reaction gas flow ratio, a second radio frequency power and a second deposition rate; depositing a film with a third predetermined thickness on the film with the second predetermined thickness at a second deposition pressure, a third reaction gas flow ratio, a third radio frequency power and a third deposition rate; and depositing a thin film of a fourth predetermined thickness on the thin film of the third predetermined thickness at a first deposition pressure, a first reaction gas flow ratio, a fourth radio frequency power and a fourth deposition rate. According to the invention, dynamic balance and uniform distribution of stress are realized in the film growth process.

The invention provides a manufacturing method of a doped microcrystalline silicon layer, a heterojunction solar cell and a preparation method of the heterojunction solar cell. The manufacturing method of the doped microcrystalline silicon layer comprises the following steps: firstly, providing PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and placing a silicon wafer in a reaction cavity of the PECVD Then the pressure of the reaction cavity is adjusted to be first deposition pressure, a PECVD doping process is carried out in the reaction cavity so as to deposit a microcrystalline silicon seed layer on the silicon wafer, and the first deposition pressure ranges from 1 mbar to 2.9 mbar; finally, the pressure of the reaction cavity is adjusted to be second deposition pressure, the PECVD doping process is carried out in the reaction cavity so as to deposit a microcrystalline silicon main layer on the microcrystalline silicon seed layer, and the second deposition pressure ranges from 3 mbar to 10 mbar. According to the invention, the quality of the doped microcrystalline silicon layer can be improved, the stability of the heterojunction solar cell is improved, and the dark attenuation of the heterojunction solar cell is reduced.

The invention provides a simulation method for optimizing the performance of an MPCVD reaction cavity under different working conditions, which is characterized by comprising the following steps of: S1, constructing a geometric model of the cylindrical MPCVD reaction cavity according to set geometric parameters through multi-physical simulation software; s2, setting a plurality of physical fields for the geometric model, and performing network division on each region; s3, setting a plurality of microwave input powers; s4, setting a plurality of deposition pressures; s5, for each deposition pressure, according to the geometric model and the physical field equation, calculating to obtain corresponding electric field data and electronic data under each microwave input power; and S6, the deposition pressure corresponding to the optimal electric field data and electronic data is selected as the optimized deposition pressure. In a word, the method can be used for calculating the deposition pressure beneficial to relieving the secondary electric field and the secondary plasma, so that the damage to the MPCVD reaction cavity is reduced.