13 results about "Deposition pressure" patented technology

The invention discloses a SiC-coated C nano whisker material as well as a preparation method and application thereof. The preparation method of the SiC-at-C nano whisker material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introducing the precursor and the carrier gas, stopping laser, then stopping introducing H2, vacuumizing the reaction chamber to be below 20Pa, and after the substrate material is cooled to room temperature, taking out the substrate material. The SiC-coated C nano whisker material prepared by the method has excellent electromagnetic shielding performance and flexibility, is simple in process, short in period and easy to scale, and has a wide application prospect in the field of electromagnetic shielding equipment.

The invention relates to the technical field of electro-deposition equipment, and provides a radioactive source auxiliary electro-deposition pressure stand and device.The pressure stand comprises a rack, a source table is arranged on the rack, and a supporting face used for supporting a radioactive source sheet is formed on the source table; the pressure mechanism is connected to the rack, and a pressing end facing the supporting surface is formed on the pressure mechanism; the pressure mechanism is slidably connected with the rack. The pressing end can get close to or get away from the supporting face along with sliding of the pressure mechanism. The pressure mechanism is connected with the driving mechanism through the transmission mechanism, and the transmission mechanism is used for converting driving of the driving mechanism into sliding of the pressure mechanism, so that the pressing end is close to or away from the supporting face. By means of the arrangement, a traditional connection mode of fastening through multiple screws is replaced, operation is easy and convenient, sealing reliability is high, operation efficiency can be further improved, in addition, the risk that workers make contact with electrolyte or an electro-deposition tank can be reduced, and safety is high.

The invention discloses a TOPCon photovoltaic cell and a preparation method thereof, and relates to the technical field of photovoltaic cells. The LPCVD furnace is a tubular diffusion furnace and is provided with a furnace mouth area, a furnace middle area and a furnace tail area; reaction gas outlets are respectively formed in the furnace mouth area, the furnace middle area and the furnace tail area; the method comprises the steps that in a deposition chamber of an LPCVD furnace, an n-step deposition process is adopted for preparing an amorphous silicon layer, n is larger than or equal to 2, and the deposition temperature of a furnace mouth area is not lower than the deposition temperature of a furnace middle area and the deposition temperature of a furnace tail area; the deposition temperature of the furnace mouth area in the ith step is not lower than the deposition temperature of the furnace mouth area in the (i + 1) th step, and i is an integer from 1 to n-1; the deposition pressure in the ith step is lower than that in the (i + 1) th step; the reaction gas flow of the furnace mouth area in the ith step is lower than the reaction gas flow of the furnace mouth area in the (i + 1) th step. According to the method, the amorphous silicon layer is deposited through multiple steps, and the deposition temperature, flow and pressure are cooperatively controlled, so that furnace mouth gas accumulation is effectively inhibited, the film thickness uniformity of the silicon wafer at the furnace mouth position is effectively improved, and the appearance white edge defect of the battery piece is eliminated.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

The application relates to the technical field of surface coating preparation, and discloses a composite coating based on texture and a preparation method thereof, which comprises the following steps: adopting a hot-wall chemical vapor deposition process to sequentially deposit a TiN layer, an MT-TiCN layer, a bonding layer, a modification layer, a layer and an outermost TiN layer on the surface of a substrate, wherein: the layer is composed of three sub-layers, and the deposition process satisfies the following conditions: the deposition temperature is in the range of 900-1050 DEG C, and is gradually reduced during the deposition process; the deposition pressure is 50-200 mbar; the mixed gas contains CO and H2, and the volume ratio of CO to H2 is controlled to be between 0.5 and 3; the volume ratio of the mixed gas is not higher than 92% and not lower than 80%; the modification layer comprises an Al purging modification layer and an oxidation modification layer, and is used for controlling the texture and the grain size of the layer. The application can obtain a strong (006) texture coating, and meanwhile, the particle size is less than or equal to 1 micrometer, so that the comprehensive performance is relatively optimal.

The invention discloses a SiCnw / Ni composite material as well as a preparation method and application thereof. The preparation method of the SiCnw / Ni composite material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introduction of the precursor and the carrier gas, closing the laser, then stopping introduction of H2, vacuumizing the reaction chamber to 20 Pa or below, taking out the substrate material after the substrate material is cooled to the room temperature, and electroplating nickel on the surface of the substrate material. The shielding effectiveness of the prepared SiCnw / Ni composite material reaches 69 dB (8-12 GHz) when the thickness is 0.39 mm, and the SiCnw / Ni composite material is good in flexibility, high in stability and wide in application prospect.

This invention provides a method for preparing an AlScN piezoelectric coating material with high mechanical properties and high temperature resistance. The method includes: using an alloy target composed of Al and Sc, forming an AlScN piezoelectric functional layer on a substrate surface via magnetron sputtering; and controlling the volume ratio of argon to nitrogen, temperature, sputtering power, deposition pressure, and target-substrate distance during magnetron sputtering to allow the AlScN piezoelectric functional layer to grow in multiple orientations during deposition. The AlScN piezoelectric coating material obtained by this invention exhibits excellent mechanical properties, temperature resistance, and corrosion resistance. When deposited on a substrate, this coating material can simultaneously generate longitudinal waves, longitudinal and transverse waves, and transverse waves to achieve defect detection and stress measurement in steel plates, welds, and steel pipes in various media. Furthermore, it exhibits long-term stable service capability under high temperature and harsh operating conditions without the need for a protective layer, meeting long-term usage requirements, facilitating mass production, and possessing promising prospects for promotion and application.

The utility model relates to the technical field of plate heat exchanger inlet water filtering devices, and discloses an anti-deposition pressure-isolating heat exchange station plate heat exchanger inlet water filtering device which comprises a water inlet pipeline, a filter screen is detachably connected to the interior of the water inlet pipeline, and a slag discharging opening is formed in the bottom face of the water inlet pipeline. The bottom of the slag discharging opening is fixedly connected with a discharging pipe, the bottom of the discharging pipe is in threaded connection with a storage barrel, the interior of the storage barrel is fixedly connected with a drainage pipe, the interior of the storage barrel is provided with a filtering unit, and the bottom of the drainage pipe is detachably connected with a three-way connecting pipe. According to the utility model, through the cooperation of the slag discharge port, the discharge pipe, the storage barrel, the drain pipe, the filter unit, the three-way connecting pipe, the fixed plate and the water pump, impurities intercepted by the filter screen can be collected, and the phenomenon that the impurities are deposited at the bottom of the water inlet pipeline to affect the filtering effect of the filter screen and the passing rate of water flow is avoided.

A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

An apparatus and method for a continuous supply of feedstock for a friction stir additive manufacturing method has a rod supply system that transports feedstock segments to a shuttle. The rod supply system has actuators that are coupled to allow movement of the delivery point of the feedstock. The shuttle indexes the feedstock to be on axis with the spindle and rotates it to match the speed and orientation of the spindle before it makes contact with other feedstock currently being deposited. An upper thrust mechanism moves the feedstock from the shuttle to a one-way collet and applies deposition pressure through the collet while the collet raises. Once raised, the collet then applies deposition pressure to the feedstock and the upper thrust mechanism retracts so the shuttle can index again and present additional feedstock. The process can repeat to continuously supply feedstock until the workpiece is complete.

The application provides a preparation method of a high-temperature-resistant AlN piezoelectric coating material capable of exciting multiple ultrasonic waves, and comprises the following steps: forming an AlN piezoelectric functional layer on the surface of a substrate by using an Al target through magnetron sputtering; and controlling the volume ratio of argon and nitrogen, the temperature, the sputtering power, the deposition pressure and the target-substrate distance in the magnetron sputtering so that the AlN piezoelectric functional layer grows in multiple orientations during the deposition process. The AlN piezoelectric coating material prepared by the application has good mechanical properties, temperature resistance and corrosion resistance, and can ensure the long-term stable service ability of the AlN piezoelectric coating under high temperature and harsh working conditions without a protective layer, reduce the failure possibility caused by corrosion and other factors, and realize the accurate nondestructive measurement of the bolt pretightening force, or realize the steel substrate defect detection and stress measurement. The sputtering technology adopted by the application is a general technology in the industry, and the industrial production batch is easy to realize, the processing efficiency is high, and the production cost of the manufacturer can be greatly reduced.

The invention discloses a low-stress PECVD (Plasma Enhanced Chemical Vapor Deposition) thin film preparation method based on stepwise deposition. The method comprises the following steps: preheating a to-be-deposited substrate placed in a deposition cavity at a preset temperature; depositing a film with a first predetermined thickness on the substrate to be deposited at a first deposition pressure, a first reaction gas flow ratio, a first radio frequency power and a first deposition rate; depositing a thin film with a second predetermined thickness on the thin film with the first predetermined thickness at a second deposition pressure, a second reaction gas flow ratio, a second radio frequency power and a second deposition rate; depositing a film with a third predetermined thickness on the film with the second predetermined thickness at a second deposition pressure, a third reaction gas flow ratio, a third radio frequency power and a third deposition rate; and depositing a thin film of a fourth predetermined thickness on the thin film of the third predetermined thickness at a first deposition pressure, a first reaction gas flow ratio, a fourth radio frequency power and a fourth deposition rate. According to the invention, dynamic balance and uniform distribution of stress are realized in the film growth process.

The invention provides a manufacturing method of a doped microcrystalline silicon layer, a heterojunction solar cell and a preparation method of the heterojunction solar cell. The manufacturing method of the doped microcrystalline silicon layer comprises the following steps: firstly, providing PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and placing a silicon wafer in a reaction cavity of the PECVD Then the pressure of the reaction cavity is adjusted to be first deposition pressure, a PECVD doping process is carried out in the reaction cavity so as to deposit a microcrystalline silicon seed layer on the silicon wafer, and the first deposition pressure ranges from 1 mbar to 2.9 mbar; finally, the pressure of the reaction cavity is adjusted to be second deposition pressure, the PECVD doping process is carried out in the reaction cavity so as to deposit a microcrystalline silicon main layer on the microcrystalline silicon seed layer, and the second deposition pressure ranges from 3 mbar to 10 mbar. According to the invention, the quality of the doped microcrystalline silicon layer can be improved, the stability of the heterojunction solar cell is improved, and the dark attenuation of the heterojunction solar cell is reduced.