93 results about "Deposition pressure" patented technology

A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

A method and apparatus for forming an epitaxial titanium silicide film is described. According to the present invention, a monocrystalline silicon substrate is placed in a deposition chamber and heated to a temperature between 710-770 DEG C. A silicon source gas and titanium tetrachloride are then provided into the deposition chamber. The deposition pressure is maintained between 5-10 torr. An epitaxial titanium silicide film is then formed on the substrate from the silicon source gas and the titanium tetrachloride.

A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.

The invention discloses a method for preparing a slow-release type skeleton-type TiN/Cu-Zu metal layer antibacterial film and relates to a preparation method of an antibacterial film, which solves the problem that an antibacterial film prepared by the conventional method has poor durability of antibacterial effect. The method has the following steps of: 1. putting a matrix on a target platform of a vacuum room; and then heating to 200 DEG C and sputter cleaning for 20 min; 2. rotating the target platform of the vacuum room under the condition that argon flow is 6sccm, nitrogen flow is 2sccm, deposition pressure is 0.56Pa, and the deposition bias of the matrix is compound bias; and alternately depositing TiN layers and metal layers on the surface of the matrix till the total thickness of film layers is 0.1 micrometer-10 micrometers to obtain the slow-release type skeleton-type TiN/Cu-Zu metal layer antibacterial film. After the slow-release type skeleton-type TiN/Cu-Zu metal layer antibacterial film is soaked for three months, the ion dissolving speed is not reduced, and the antibiosis rate against colibacillus can still reach above 97%.

This invention relates to a method for manufacturing SiC nanowires on the surface of C/C composite, which comprises the steps of: (1) polishing the C/C composite, washing with distilled water, and drying; (2) binding the treated C/C composite with carbon fibers, and suspending in a vertical chemical vapor deposition furnace; (3) evacuating the furnace, pumping Ar into the furnace to normal pressure, and repeating for three times; (4) applying electricity, heating, and pumping H2 for pretreatment; (5) adjusting the flow rates of Ar, H2 and methyl trichlorosilane when the furnace temperature reaches the predetermined deposition temperature, keeping the temperature for deposition, the turning off the power and cooling naturally to obtain a layer of SiC nanowires on the surface of the material. The method has such advantages as simple process, no additive, low deposition pressure and temperature. The morphology and purity of the synthesized SiC nanowires can be effectively controlled by adjusting the deposition factors.

A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.

A present method of manufacturing a silicon-based thin-film photoelectric conversion device is characterized in that a double pin structure stack body is formed by successively forming, in an identical plasma CVD film deposition chamber, a first p-type semiconductor layer, an i-type amorphous silicon-based photoelectric conversion layer, a first n-type semiconductor layer, a second p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer, and a second n-type semiconductor layer on a transparent conductive film formed on a substrate, and the first p-type semiconductor layer, the i-type amorphous silicon-based photoelectric conversion layer and the first n-type semiconductor layer are formed under such conditions that a film deposition pressure in the plasma CVD film deposition chamber is not lower than 200 Pa and not higher than 3000 Pa and power density per unit electrode area is not lower than 0.01 W/cm² and not higher than 0.3 W/cm². Thus, the silicon-based thin-film photoelectric conversion device attaining excellent quality and high photoelectric conversion efficiency can be manufactured at low cost and high efficiency using a simplified manufacturing apparatus.

The invention relates to a semi-solid deposition pressure welding device for dissimilar metals. The device comprises a pressure control device, a temperature control device, a gas protection device and a die assembly, wherein the pressure control device is connected with the die assembly and transfers pressure to the die assembly; a heating coil in the temperature control device is arranged outside the die assembly; a temperature control signal is used for regulating and inducing the magnitude and on/off of the current of the heating coil so as to control the heating process of the die assembly; and the gas protection device is connected with the die assembly and inputs protection gas into the die device. The semi-solid deposition pressure welding device for dissimilar metals provided by the invention is easy to operate and has the advantages of simple structure, excellent welding effect and good market prospect.

The invention provides a method for preparing a carbon-silicon carbide composite material by using a chemical gas-phase permeation method. The method is characterized in steps that: a carbon fiber weaved body is placed in a deposition chamber, and deposed carbon particles are adopted as a dividing surface, wherein methane is adopted as a reaction gas, argon is adopted as a diluting gas, a deposition pressure in the deposition chamber is 6 to 7kPa, a deposition temperature is 900 to 1000 DEG C, and a deposition time is 3 to 12 hours; then silicon carbide crystal whiskers are deposed, wherein methyl trichloro silane is adopted as a reaction gas, hydrogen is adopted as a carrier gas, methyl trichloro silane is positioned in a evaporation vessel for water bath heating, a water bath temperature is 35 to 40 DEG C, a pressure in the evaporation vessel is controlled at 0.2 to 0.3MPa, a total flow of hydrogen and methyl trichloro silane is controlled at 200 to 300ml/min, methyl trichloro silane is delivered into the deposition chamber by hydrogen through a bubbling method, argon is used as a diluting gas, a deposition pressure in the deposition chamber is 6 to 7kPa, a deposition temperature is 1100 to 1150 DEG C, and a deposition time is 1 to 7 days, such that the carbon-silicon carbide composite material is obtained. The composite material provided by the invention has good toughness and high anti-interlaminar shear strength.

The invention discloses a double-layer silicon nitride antireflection film and a manufacture method thereof. The double-layer silicon nitride antireflection film is composed of an upper-layer silicon nitride film and a lower-layer silicon nitride film, wherein the thickness of the lower-layer silicon nitride film is 10nm-15nm, the refractive index of the lower-layer silicon nitride film is 2.2-2.5, the thickness of the upper-layer silicon nitride film is 70nm-75nm, and the refractive index of the upper-layer silicon nitride film is 2.0-2.05. In manufacture, a polished mono-crystalline silicon piece is obtained, deposition temperature, deposition pressure intensity and deposition power are consistent, and a plasma enhanced chemical vapor deposition (PEVCD) process is adopted to set two group of ammonia and silane gas flow ratio parameters ordered from small to big and deposition time in the advancing direction of silicon wafers so as to manufacture the double-layer silicon nitride antireflection film. Under the condition that existing resources and other devices and materials are not added, the antireflection film identical in texture layers and different in performance parameter is manufactured in the same device through two process steps, accordingly crystalline silicon surface passivation effect is improved, sunlight reflecting effect of the crystalline silicon surface is reduced, absorption on long waves and short waves of the silicon wafers is increased, and the efficiency is improved.

The invention discloses a preparation method for a transition metal nitride super-capacitor coating material, and relates to a super-capacitor. The transition metal nitride super-capacitor coating material is obtained by performing reactive magnetron sputtering at different deposition pressures. The different deposition pressures are between 1.0 and 5.0 Pa; the transition metal nitride is ZrN, HfN and NbN. By regulating and controlling the deposition pressure during a thin film depositing process, the maximum specific capacitance values of the transition metal nitrides can be respectively 12.0, 13.5, and 10.2 mF/cm<2>; after 20,000 times of recycling, the capacity retention rates are all up to 90 percent.

The invention discloses a high-throughput chemical vapor infiltration process based on parameter regional control, application thereof and a device adopting the same. The high-throughput chemical vapor infiltration process based on parameter region control comprises the following steps: folded carbon paper is utilized to divide a deposition area into deposition zones with different specific areas, fiber preforms of same types and dimensions are placed in each of the deposition zones at preset deposition temperature, deposition pressure and gas flow, so that region control within the retention time is realized, and high-throughput composite materials with different parameter systems are prepared in single experiment; the deposition rate and the microstructure of the carbon paper and the fiber preforms in the deposition zones are tested and characterized, quick and efficient parameter optimization of the retention time and the specific areas is realized, deposition parameters and deposition areas with better deposition characteristic and better densification characteristic are sought out, and a series of technological parameters are selected in an optimized manner. According to the high-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting the same, optimized deposition parameters and deposition areas in combination with area movement of large-dimension fiber preforms are utilized, and finally rapid and uniform densification of large-dimension composite material components is realized.

When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula In_xGa_yAl_zN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.