182 results about "Transition metal nitrides" patented technology

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In_XGa_1-x)Se₂) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

A use of an amine-containing silane for forming a transition metal nitride is provided. In this use, the amine of the amine-containing silane is the source of at least some, preferably most and most preferably all of the nitrogen present in the transition metal nitride.

The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

Described is an anode material which is a transition metal nitride or carbide in form of nanoparticles, preferably a nitride or carbide with one nitrogen or carbon per metal, and especially a nitride or carbide having rock salt structure. A preferred anode material is vanadium nitride, in particular carbon coated vanadium nitride having a mean particle size of <500 nm. Embedded in an electrically conducting environment, such nanoparticulate material, in particular the vanadium nitride shows exceptional good charging-discharging cycle stability.

This invention relates to the field of fuel cell catalysts, and more particularly to fuel cell catalysts including carbon supports having compositions which comprise one or more transition metals in combination with nitrogen (e.g., a transition metal nitride) formed on or over the surface of a carbon support. The present invention also relates to methods for preparation of fuel cell catalysts. The present invention further relates to the use of fuel cell catalysts described herein in processes for the generation of electric power.

A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

It discloses a hybrid supercapacitor including a carbon aerogel cathode and a surface-oxidized transition metal nitride aerogel anode which is able to increase energy density and power density with increase of overall cell potential and at the same time lower internal resistance of the electrode and equivalent series resistance by using a monolithic electrode with no use of current collector and binder.

The invention provides a transition metal nitride/nitrogen-doped graphene nanometer composite material and a preparation method and application thereof. In the composite material, transition metal nitride nanoparticles with sizes being 5-20 nanometers are embedded into a nitrogen-doped graphene framework, and the composite material is relatively large in specific area, contains mesopores uniformlydistributed and has favorable electrical conductivity. The preparation method of the composite material comprises the steps of (1) mixing a template precursor, a carbon source and a metal source to obtain a mixed material; and (2) placing the mixed material of the step (1) in an atmosphere furnace, and performing calcination in a non-oxidization atmosphere to obtain the transition metal nitride/nitrogen-doped graphene nanometer composite material. The composite material is used for the supercapacitor, a fuel cell or a lithium ion battery and has excellent application prospect. Compared with the prior art, the preparation method of the composite material is simple in process, low in equipment requirement and low in energy consumption, the raw material is low in cost, and mass production iseasy.

The invention relates to a cathode active material of a lithium ion battery. The cathode active material comprises a core body, an interface layer cladding on an external surface of the core body and an outmost layer cladding on an external surface of the interface layer. The core body comprises carbon materials; the interface layer consists of a first material, which is one or more selected from elements capable of forming an alloy with lithium; the outmost layer consists of a second material, which is one or more selected from transition metal oxide, transition metal nitride and transition metal sulfide. The invention also relates to a preparation method of the cathode active material and a lithium ion battery prepared from the cathode active material. The cathode active material of the present invention contains the first material, which can increase capacity of the battery, and also contains the second material, which clads the first material and can effectively inhibit volume expansion of the first material caused by multiple charge and discharge. Therefore, cycle performance of the battery is improved.

A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.

The preparation method for super-capacitance material comprises: with meta-dihydroxybenzene and formaldehyde as the reacting material, with sodium acetate or sodium propionate or the mixture as additive, adding transition metal oxide during the gelling to obtain the uniform distributed RF aqueous gel with rich transition metal salt; then, with N2 or H2, drying on common pressure, and charring to obtain the final product with 400F/g-870F/g capacity.

The invention relates to a cathode material used for a lithium-sulfur secondary battery. The cathode material is characterized in that transition metal nitrides are contained in the cathode material. The transition metal nitrides are anchored on the surface of a carbon substrate well to form a conductive network together by using higher conductivity of the transition metal nitrides and affinity with the carbon substrate; moreover, the redox liquid phase conversion reaction speed of a polysulfide intermediate product is strengthened in the cathode reaction process of the lithium-sulfur battery by using the polarity characteristics of the metal nitrides, the utilization rate of the sulfur active material in the lithium-sulfur battery is improved, and the cathode material is beneficial for promoting the practicability of sulfur in the lithium-sulfur secondary battery.

Existing catalysts are noble metals generally, which are costly and easy poisoning. Active component of the disclosed catalyst is transition metal nitride. Carrier is activated carbon powder Vulcan XC-72. Percentage content of mass of transition metal nitride in active component is 1-6%. The preparation method includes steps: dissolving macrocyclic compound of transition metal, Vulcan XC-72 into organic solvent, and carrying out ultrasonic action for 30-60 minutes; stirring up and drying out the said solution under normal temperature, and obtaining powder after drying; loading the powder to closed container and letting ammonia into the container; controlling temperature of heat treatment at 600-1000 deg.C, and time as 0.5-10h so as to obtain the catalyst after natural cooling. Area ratio activity of carbon carried platinum catalyst is 1.5mA/cm2, and the disclosed carbon carried nitride catalyst reaches to 3.1 mA/cm2. Features are: simple flow and easy controlled procedure.

A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.1) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

The invention relates to electrochemical power sources and the field of electrochemical catalysis, and particularly relates to a transition metal nitride/carbon electrocatalyst. The transition metal nitride/carbon electrocatalyst comprises a substrate and a shell, the substrate is coated by the shell, and the shell comprises copper nitride and further comprises a carbon material or a nitrogen doped carbon material. The invention further provides a preparation method of the electrocatalyst, and the electrocatalyst is prepared by forming MOF of copper in advance, then further aminating and calcining through one step, and preparing the electrocatalyst. The processes of oxygen precipitation and hydrogen precipitation show the low overpotential in the alkaline environment, and the electrocatalyst can be used as a catalyst material of alkaline efficient electrolysed water.

The invention discloses a transition metal-nitrogen doped carbon composite material and a preparation method thereof. Transition metal chlorine salt and nitrogenous small organic molecules serve as atransition metal source and carbon and nitrogen sources, and transition metal coordinated macro-cyclic mixture is directly obtained by a one-step method and then carbonized to obtain the transition metal-nitrogen doped carbon composite material. The preparation method is simple, convenient, rapid and suitable for large-scale production and preparation, the synthesized transition metal-nitrogen doped carbon composite material structures a nano-sheet, transition metal on the nano-sheet exists in two forms, one form is transition metal nanoparticles, and the other form is transition metal nitridenanoparticle. The synthesized transition metal-nitrogen doped carbon composite material has nitrogen doped carbon, transition metal and nitrogen atom coordinated active sites with more defects, has large specific surface area and can be applied to the field of catalysis and energy storage.

The invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention, transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.

An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack comprising, from bottom to top, a low-oxygen-reactivity metal layer, a bottom transition metal layer, a bottom transition metal nitride layer, an aluminum-copper layer, an optional top transition metal layer, and a top transition metal nitride layer. The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen-reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.