99 results about "Transition metal nitrides" patented technology

The invention discloses a modified nickel-cobalt-aluminum ternary positive electrode material, a preparation method thereof and a lithium battery, the modified nickel-cobalt-aluminum ternary positive electrode material provided by the invention comprises a bulk phase material and a coating layer coating the surface of the bulk phase material, the coating layer is composed of boric acid and at least one of transition metal nitride containing effective metal and aluminum-containing metal oxide. According to the invention, at least one of the binary compound containing the effective metal or the aluminum-containing metal oxide and the boric acid are used as the composite coating source for composite coating, so that the coating effect of the nickel-cobalt-aluminum ternary positive electrode material is optimized, and the ultrahigh nickel-nickel-cobalt-aluminum ternary positive electrode material with better physical and chemical properties is prepared. Meanwhile, the problems that the material is poor in structural stability, high in residual alkali content, relatively low in capacity and poor in rate and cycle performance exertion are solved.

The present invention discloses a CrN-supported Pt single-atom site catalyst, its preparation and application. In the present invention, a novel Pt single-atom site catalyst is prepared with CrN as the support and single-atom Pt as the active component. Among them, CrN has excellent electrical conductivity, good acid resistance and structural stability, and is an ideal support for the Pt single-atom catalyst used in the electrocatalytic oxidation reaction of hydrogen. Moreover, due to the strong interaction between Pt atoms and the large specific surface area of the prepared CrN, the atomic-level uniform distribution of Pt and the improvement of the loading amount are ensured, so that the catalyst not only has high catalytic performance but also has the ability to resist CO poisoning. The problem of particle agglomeration during the formation of CrN is effectively alleviated by the method of silica coating. This method has universality and can be used to prepare various nanomaterials of small-sized transition metal nitrides, providing conditions for improving the performance of the catalyst after loading single-atom Pt.

The invention relates to the technical field of material protection, in particular to a lead-bismuth-resistant coating and a preparation method thereof.The coating is composed of a metal bonding layer, a functional transition layer and a corrosion-resistant layer, the metal bonding layer is formed by compounding a high-entropy alloy and a medium-entropy alloy, a component gradient transition structure is formed, the high-entropy alloy is a near-equal-atomic-ratio alloy of Fe, Co, Ni, Cr and Al, and the medium-entropy alloy is a near-equal-atomic-ratio alloy of Fe, Co, Ni, Cr and Al. %, and the medium-entropy alloy is a FeCoNiCr system quaternary alloy, and the content of the Al element is 5-10 at. The functional transition layer is a transition metal nitride layer; and the corrosion-resistant layer is an eutectic composite layer of rare earth oxide and stabilized oxide. Therefore, the problems of insufficient bonding strength, limited corrosion resistance, poor process stability and the like in the prior art are solved.

The invention relates to the technical field of cables, in particular to fire-resistant silicone rubber, a preparation method thereof and a cable, and the fire-resistant silicone rubber is composed of a matrix resin composite system, a composite flame-retardant system, a nanometer enhancement and smoke suppression system and an interface and vulcanization system, the matrix resin composite system comprises methyl vinyl silicone rubber, vinyl silicone rubber and macromolecular polyethylene, the composite flame-retardant system comprises nano aluminum hydroxide, zinc borate and transition metal nitride, and the nano enhancement and smoke suppression system comprises modified nano silicon dioxide, organic montmorillonite and zinc molybdate. The interface and vulcanization system comprises a silane coupling agent, dicumyl peroxide and a platinum catalyst. Therefore, the problems that in the prior art, fire resistance is insufficient, toxic gas is released during combustion, the mechanical property is poor, machining is complex, and environment friendliness is low are solved.

A semiconductor device includes a gate structure. The gate structure, form bottom to top, includes a gate insulating layer, a first barrier layer and a gate conductive layer. The gate insulating layer is disposed on a substrate. The first barrier layer is disposed on the gate insulating layer. The first barrier layer includes a transition metal nitride, and a concentration of nitrogen atom of a portion of the first barrier layer adjacent to the gate insulating layer is higher than a concentration of nitrogen atom of a portion of the first barrier layer away from the gate insulating layer. The gate conductive layer is disposed on the first barrier layer.

This invention discloses a high-entropy transition metal nitride ceramic material and its preparation method. The preparation method includes the following steps: mixing n kinds of transition metal nitride powders and m kinds of transition metal powders, vacuum drying to obtain a precursor; placing the precursor in a mold and performing pre-pressing treatment to obtain a pre-pressed sample; sintering the pre-pressed sample in a sealed environment at a temperature of 500–3500℃ and a pressure of 2–28 GPa to obtain the high-entropy transition metal nitride ceramic material; wherein n≥1, m≥0, and the total number of transition metal elements in the precursor is four or more. This invention improves the stability of the precursor and reduces the size and distance of particles within the precursor through two pressure treatments, achieving for the first time the synthesis of high-density, high-purity high-entropy transition metal nitride ceramic materials via solid-state reaction.

The invention provides a temperature sensor and a preparation method thereof, and the method comprises the steps: introducing displacement cations into a transition metal nitride film to form a displacement doped transition metal nitride film, the displacement cations being equivalent to transition metal cations; the crystal structure and the energy band structure of the thin film are regulated and controlled by regulating and controlling the concentration of the displacement cations, so that the conductivity of the thin film is regulated and controlled, and the displacement doped transition metal nitride thin film is obtained; and processing the displacement doped transition metal nitride film through an MEMS technology to obtain the temperature sensor. According to the invention, the high-sensitivity temperature zone of the temperature sensor based on the doped transition metal nitride film can be regulated and controlled in a range from low temperature to room temperature, and the temperature range of the high-sensitivity temperature zone of the temperature sensor is widened.

The present disclosure is directed to freestanding films for a lithium-metal-anode comprising a 2D arrays of nanocrystals of a transition metal nitride, carbide, or mixture and optionally a MXene as a conductive binder, and methods of making and using the same.

This invention discloses a lithium manganese iron phosphate composite material modified by a transition metal nitride and amorphous carbon composite coating, its preparation method, and its application, belonging to the field of lithium-ion battery technology. This invention uses vanadium nitride / amorphous carbon to composite-coat lithium manganese iron phosphate material, making the composite cathode material structure more stable. The use of vanadium nitride reduces the amount of carbon coating, avoiding the thickening of the coating layer and the decrease in tap density of the active material caused by high carbon content, which would hinder the lithium iron phosphate process. + The issue of diffusion. Vanadium nitride not only has good electrical conductivity, but also good Li... + Conductive transport properties enable rapid realization of Li + The insertion and extraction of Li not only improves the conductivity of the material, but also further opens up and increases the Li content on the surface of the cathode material. + The diffusion channels reduce the capacity loss of the modified material.

The invention discloses a composite material and a preparation method thereof, a positive pole piece, a secondary battery and an electric device, and belongs to the technical field of batteries. The composite material comprises a lithium-containing compound, a catalyst and a conductive agent, and the lithium-containing compound comprises a lithium element, a carbon element and an oxygen element; the catalyst comprises one or more of transition metal oxides, transition metal carbides, transition metal nitrides or transition metal phosphides; the total pore volume V of the composite material is more than or equal to 0.02 cm < 3 > / g and less than or equal to 1cm < 3 > / g, and the average pore size D of the composite material is more than or equal to 2nm and less than or equal to 50nm. According to the technical scheme, the capacity of the battery can be improved.

The invention discloses a preparation method of a nano tungsten nitride powder material, and belongs to the technical field of preparation of transition metal nitride materials. The preparation method comprises the following steps: by taking tungsten powder as a tungsten source and sodium azide and melamine as nitrogen sources, grinding and mixing the tungsten powder and the sodium azide according to a mass ratio of 5: 1, and tabletting the mixture and the melamine by using a hydraulic machine respectively, so as to obtain the composite material. The method comprises the following steps: preparing a cylindrical shape by wrapping a cylindrical sheet formed by pressing a mixture of tungsten powder and sodium azide with two pieces of melamine according to the size of a synthesis cavity, putting the cylindrical raw material into a heating container, putting the heating container into the synthesis cavity, keeping the temperature and pressure for 10 minutes at the pressure of 3.0-5.0 GPa and the temperature of 1500-1800 DEG C, cooling and relieving the pressure, and finally putting a sample into diluted hydrochloric acid for cleaning, and preparing the nano tungsten nitride powdery material. The technological process is simple, and the preparation period and the sintering time are shortened; air pollution and resource waste are avoided; the prepared nano powdery material has the characteristics of high purity, easiness in impurity removal and the like.

The invention relates to a flexible single-crystal nanostructure array film and a preparation method and application thereof, and belongs to the technical field of single-crystal nanometers.The flexible single-crystal nanostructure array film comprises a fluorine crystal mica single-crystal substrate, a single-crystal seed layer and a single-crystal nanostructure array which are sequentially arranged from bottom to top, the single-crystal seed layer, the single-crystal nano-structure array and the fluorine crystal mica single-crystal substrate have an epitaxial relationship, the single-crystal seed layer is composed of TiN, the single-crystal nano-structure array is composed of transition metal nitride, the thickness of the fluorine crystal mica single-crystal substrate is smaller than or equal to 20 microns, the thickness of the single-crystal seed layer is 2-50 nm, and the thickness of the single-crystal nano-structure array is 5-5000 nm. By adopting a three-layer epitaxial structure of the fluorine crystal mica single-crystal substrate, the single-crystal seed layer and the single-crystal nanostructure array, high-quality integration of a single-crystal material on the flexible substrate is realized, and the problem that a traditional flexible substrate and an inorganic nanostructure are not matched in the aspects of thermal expansion coefficient and crystal symmetry is solved.

The invention provides a preparation method of high-entropy nitride ceramic, and belongs to the technical field of special ceramic. The preparation method of the high-entropy nitride ceramic provided by the invention comprises the following steps: mixing TiN0.3 and more than three non-titanium transition metal nitrides, and sintering to obtain the high-entropy nitride ceramic, the sintering temperature ranges from 1300 DEG C to 1400 DEG C, and the pressure ranges from 4.5 GPa to 5.5 GPa. The high-entropy effect of the high-entropy ceramic is utilized, and high pressure is applied in the sintering process, so that raw materials are contacted more tightly, diffusion is easier to occur, the compactness of the material is improved, and the hardness of the material is improved; meanwhile, by adding a non-stoichiometric compound TiN0.3, material interface diffusion is promoted, so that the high-entropy nitride ceramic with a face-centered cubic structure is prepared at a relatively low sintering temperature.

The invention provides a super-stable core-shell nano array electrolyzed water catalyst and a preparation method thereof. The material is a core-shell nano array, the component of a core layer is a transition metal nitride nanosheet array loaded on foamed nickel, and transition metal nitride is obtained by high-temperature nitridation of transition metal oxide nanosheets which are synthesized by a hydrothermal method and loaded on the foamed nickel. The shell layer component is nitrogen-doped carbon, and the nitrogen-doped carbon is obtained by carrying out in-situ solution polymerization on pyrrole on the core layer structure and then carrying out high-temperature nitridation. The catalyst is applied to hydrogen production by alkaline electrolysis of water, the overpotential of alkaline hydrogen evolution reaction can be remarkably reduced, and the catalytic activity is not obviously reduced when the catalyst stably operates for one month under the current density of 1A cm <-2 >. The technology is simple in preparation process, low in cost and environment-friendly, and has a good application prospect.

The invention discloses a microwave crystallization preparation method of a transition metal nitride ultrathin nanosheet, which comprises the following steps: (1) dissolving a transition metal salt and Li3N in an o-xylene solution, then adding an ethylenediamine solution, fully stirring, heating the solution, and carrying out microwave crystallization to obtain a precursor solution; and carrying out centrifugal collection, washing and vacuum drying to obtain the amorphous transition metal nitride nanosheet. The transition metal salt is WCl < 6 >, VCl < 3 > or MoCl < 5 >; and (2) in a nitrogen atmosphere, the amorphous transition metal nitride nanosheet is subjected to rapid microwave heating, and the highly crystallized transition metal nitride nanosheet is obtained. The preparation process of the TMN nanosheet with the surface-enhanced Raman effect, provided by the invention, has very strong controllability, the thickness of the prepared nanosheet is about 1-2nm, the phenomenon of sintering or aggregation is avoided, and the TMN nanosheet with the surface-enhanced Raman effect has an outstanding surface-enhanced Raman spectrum effect.

According to the preparation method and application of the petal-shaped transition metal nitride material, low-cost and controllable preparation of the petal-shaped Ti3CN material is achieved through the step-by-step etching-structure reconstruction-directional nitriding technology, the conductivity and chemical stability of the petal-shaped Ti3CN material are remarkably improved by means of the highly-open lamella and nitriding toughening characteristics of the petal-shaped Ti3CN material, and the petal-shaped transition metal nitride material can be used for preparing the petal-shaped Ti3CN material. The application bottleneck of the traditional material is broken through, the problems of difficult morphology regulation and control and limited conductivity in the traditional nitride synthesis are solved, the material can be applied to high-conductivity scenes such as electronic devices, sensors and energy storage equipment, and the application of the material in the fields of electronic devices and energy is expanded.

The present disclosure provides a catalyst for the production of percarboxylic acids which includes a co-catalyst 1 being either a transition metal oxide or carbonaceous compound and a second co-catalyst 2, distinct from co-catalyst 1 and being comprised of at least one transition metal, transition metal oxide, transition metal carbide or transition metal nitride. The combination of these co-catalysts provides the necessary kinds of catalytic active sites for both the chemisorption and activation of formic acid as well as active sites for the generation of surface active oxygen species. The combination of these co-catalyst materials results in the synergistic benefits of enhancement in catalytic activity for the production of the peracid as well as improved catalyst stability.

This invention discloses a low-RF-loss silicon-based gallium nitride (GaN) high-electron-mobility transistor, primarily addressing the problems of leakage current at the interface between GaN material and silicon substrate and high RF loss in existing devices. From bottom to top, it comprises a silicon substrate, an RF-loss suppression layer, a channel layer, an AlN insertion layer, and a barrier layer. An insulating gate dielectric layer and a gate electrode are sequentially disposed on the barrier layer, with source and drain electrodes on either side. The RF-loss suppression layer is a composite stacked structure of AlN and transition metal nitride (ScYAlN), with the transition metal nitride layer composition gradually changing from AlN along the growth direction to a composition matching the lattice constant within the channel layer. This invention avoids the remelting etching of aluminum atoms against the silicon substrate during high-temperature MOCVD growth of the AlN nucleation layer on the silicon substrate, suppresses leakage current at the heteroepitaxial interface and RF power loss in the device, and improves the breakdown voltage and reliability of silicon-based GaN devices. It can be used in microwave and millimeter-wave RF integrated circuits and high-efficiency power switches.

A buffered negative electrode-electrolyte assembly includes: a porous negative electrode comprising a metal, a transition metal nitride, or a combination thereof; a solid-state electrolyte; and a buffer layer between the porous negative electrode and the solid-state electrolyte. The buffer layer comprising a buffer composition according to Formula (1) MmNnZzHhXx. The buffer composition has an electronic conductivity that is less than or equal to 1×10−2 times an electronic conductivity of the solid-state electrolyte, and the buffer composition has an ionic conductivity less than or equal to 1×10−6 times an ionic conductivity of the solid-state electrolyte.

The invention provides a fourth subgroup transition metal nitride solid solution strain sensitive film with an ultralow resistance temperature coefficient and a preparation method, and belongs to the field of resistive film pressure sensors and film strains.The fourth subgroup transition metal nitride solid solution strain sensitive film comprises a substrate and a functional sensitive film deposited on the substrate, the material has a low resistance temperature coefficient and a stable complete solid solution crystal structure; the binary A-B and binary A-C transition metal nitride solid solution strain sensitive film with proper resistivity, ultralow TCR and uniformly distributed components is obtained by adopting a double-target magnetron co-sputtering or alloying single-target magnetron sputtering mode; and the ternary A-B-C transition metal nitride solid solution strain sensitive film is obtained by adopting a three-target magnetron co-sputtering or alloying single-target magnetron sputtering mode. The multi-component composite film prepared by the invention is of a single-phase solid solution structure; the process is simple and easy to adjust, and the structure is stable; the method can be widely popularized in the fields of resistance-type film pressure sensors, film strain gauges and the like.

The present invention belongs to the field of photoelectrochemistry and sensor detection technology, and discloses a preparation method and application of an acceptor-donor type photoelectrode of a transition metal nitride modified carbon nitride. The present invention compounds a class of transition metal nitrides with g-C3N4. On the one hand, transition metal nitrides have a strong electron absorption ability and can be used as an electron acceptor. Once the acceptor-donor type material based on g-C3N4 is photoexcited, the excited electrons are rapidly extracted from the basal plane (electron donor) of g-C3N4 to the transition metal nitride (electron acceptor), which reduces charge accumulation by accelerating charge separation. On the other hand, it has a smaller band gap and a wider light response range, which is conducive to the extraction of photogenerated charges, thereby obtaining excellent photoelectric performance and realizing the amplification of photoelectrode material photoelectric signals. The present invention not only provides an efficient photoelectric signal amplification strategy for constructing a carbon nitride-based photoelectrochemical aptamer sensor, but also effectively improves the sensitivity of detection of pesticide residues in aquatic environments.

The application relates to the technical equipment field of sintering furnaces, and provides a sintering furnace high-temperature repairing system and a repairing method.The system comprises a sintering furnace unit, an optical fiber monitoring unit and a cooling unit, the sintering furnace unit comprises a sintering furnace base body, a functional coating, the functional coating comprises a first functional layer, a second functional layer and a third functional layer, the first functional layer comprises a ternary transition metal nitride ceramic material, the second functional layer comprises a mullite fiber material, and the third functional layer comprises an ultrahigh-temperature ceramic composite material.The design of the three-layer gradient functional coating of the sintering furnace high-temperature repairing system improves stress buffering capacity and crack blocking capacity, the optical fiber monitoring unit significantly improves micro-crack detection, and the cooling unit and the sintering furnace unit are cooperatively matched to realize self-repairing of sintering furnace cracks, improve the overall performance of the sintering furnace, and have good commercial application prospects.

The present invention relates to the technical field of green energy, and discloses a normal pressure liquid ammonia synthesis system, which comprises: a catalyst module, which comprises a transition metal-nitride composite catalyst, the active component of which is Fe-Co-Mo ternary alloy nanoparticles, and which is loaded on a porous boron nitride carrier; the reactor module adopts a multi-stage gradient temperature control structure; the gas circulation module is used for integrating a membrane separation assembly and a pressure swing adsorption unit; according to the pressure control system, the system pressure is maintained to be 0.1-0.5 MPa through inert gas dynamic compensation, and a pressure fluctuation suppression device is arranged. The Fe-Co-Mo ternary alloy optimizes a nitrogen dissociation path through an electron synergistic effect, a boron nitride carrier provides high specific surface area and anti-sintering performance, the conversion per pass reaches 15% or above, the activity attenuation is only 0.03% / h after the catalyst continuously operates for 2000 hours, the service life is prolonged by 3 times, and the raw material consumption and maintenance cost are remarkably reduced.

The invention discloses a lithium supplement agent and a preparation method thereof, a positive pole piece, a battery and a power utilization device, the lithium supplement agent is of a porous structure, the lithium supplement agent comprises an inner core, a catalyst and a conductive agent, and the inner core comprises an organic lithium supplement agent; the catalyst comprises at least one of transition metal oxide, transition metal carbide, transition metal nitride, transition metal sulfide and transition metal phosphide. Therefore, the decomposition voltage of the lithium supplement agent can be effectively reduced, so that the lithium supplement agent gives full play to the lithium supplement capacity, and meanwhile, the influence on other components in the battery is also reduced.

MXenes are nanostructures with unique characteristics for bioanalytical applications, such as hydrophilicity, large surface area, strong metallic conductivity, strong ion transport capabilities, biocompatibility, minimal diffusion barrier, and easy functionalization. These materials are formed of transition metallic nitrides, carbides, or carbonitrides. This invention is the innovative of using MXenes in electrochemical and optical biosensors, identifying future requirements and potential in this sector, particularly in the development of wearable sensors and platforms with integrated biomolecule detection.

This invention discloses a transition metal non-stoichiometric compound-reinforced and toughened high-entropy nitride ceramic and its preparation method. The raw materials for preparing this nitride ceramic include a transition metal non-stoichiometric compound and a transition metal nitride. The chemical formula of the transition metal non-stoichiometric compound in the raw material is MXy, where M is selected from Cr, V, Mo, W, Ti, Nb, Ta, Hf, and Zr metals; and X is selected from C, B, or N nonmetals. The chemical formula of the transition metal nitride in the raw material is TMN. x TM is selected from at least one of Cr, V, Mo, W, Ti, Nb, Ta, Hf, and Zr. The core innovation of this invention lies in using non-stoichiometric compounds as the reinforcing phase of nitride ceramics to construct a "defect-driven" toughening mechanism, which can achieve rapid densification of the material at a lower sintering temperature and effectively improve the fracture toughness of the material.

The invention discloses a semiconductor element and a manufacturing method thereof. The semiconductor element comprises a gate structure, and the gate structure comprises a gate insulating layer, a first barrier layer and a gate conductive layer from bottom to top. The gate insulating layer is arranged on a substrate, the first barrier layer is arranged on the gate insulating layer, the first barrier layer comprises a transition metal nitride, and the nitrogen atom concentration of the part, adjacent to the gate insulating layer, of the first barrier layer is higher than that of the part, away from the gate insulating layer, of the first barrier layer. The gate conductive layer is disposed on the first barrier layer.

The invention relates to a method for manufacturing a light-emitting diode comprising: having a sapphire substrate; depositing an epitaxial intermediate layer on the substrate made of transition metal nitride selected from: TiN, ZrN, HfN, NbN, TaN, VN, MoN, WN, CrN; depositing a buffer layer on the intermediate layer so as to obtain an epitaxial layer, the buffer layer being made of AlxGa1-xN with 0