236 results about "Nitrogen treatment" patented technology

The invention discloses a method for continuously preparing an Si-B-N-O fiber by using a PCS fiber, which comprises the following steps of: after air curing treatment is carried out on the PCS fiber, firstly carrying out nitrogen treatment on a PCS curing fiber and then carrying out boronization treatment or firstly carrying out the boronization treatment and then carrying out the nitrogen treatment; then sintering the PCS curing fiber after the nitrogen treatment and the boronization treatment under the high temperature condition of 1200-1400 DEG C under the protection of high-purity N2 gas or argon atmosphere to prepare the Si-B-N-O fiber. Compared with an Si-N-O fiber, the prepared Si-B-N-O fiber has better temperature resistance, lower dielectric performance and simpler preparation process and is easy to realize industrialized batch preparation.

The invention relates to a manufacturing method of a connecting bar of a diesel engine, which comprises the following processing steps: (1) roughly milling an upper end surface (3); (2) taking the upper end surface (3) as a positioning benchmark, correcting circular processing lines of a large hole (11) and a small hole (13); roughly milling a lower end surface (4); expanding the large hole (11) and the small hole (13), and the like. The manufacturing method is characterized in that in the step (10), the rough and precise counterboring of the flush socket (7) and the drilling, the expanding and the reaming of the bolt hole (6) are finished in one step; in the step (2) and the step (12), the large hole (11) and the small hole (13) are simultaneously half precisely bored, the sequential processing is positioned by the large hole (11), the small hole (13) and the upper end surface (3); in the step 22), plating protective layers positioned on the inner surfaces of the large hole (11) and the small hole (13) are chromium plating layers; in the step (23), the surface chemistry treatment adopts nitrogen treatment; and in the step (28), the surface layer strengthening treatment adopts shot blasting. The manufacturing method of a connecting bar of a diesel engine provided by the invention has reasonable step arrangement and can effectively enhance the quality and the efficiency of the processing of the connecting bar.

The invention provides a method for preparing graphene by epitaxy of an ultrathin hexagonal phase silicon carbide film on an insulating substrate. The method is characterized by comprising the following steps: step one, taking the insulating substrate; step two, carrying out high-temperature etching pretreatement on the insulating substrate by hydrogen to remove surface scratch and other deficiencies so as to obtain flat surface; step three, carrying out high-temperature nitrogen treatment on the insulating substrate to activate the epitaxial surface so as to ensure that subsequent silicon carbide can be easily adhered on the surface of the substrate and maintain the same crystallographic orientation relationship with the substrate; step four, extending the hexagonal phase monocrystal silicon carbide on the insulating substrate; and step five, vaporizing silicon ions in the silicon carbide to complete preparation of the graphene on the insulating substrate.

The invention relates to a salt-bath heat treatment technology of a piston rod, which comprises the following steps of primary processing of the piston rod and surface heat treatment of the piston rod, wherein the surface heat treatment technology of the piston rod puts emphasis on first nitrogen treatment and second oxidation treatment, thus realizing the combination of wearing resistance and corrosion resistance and the combination of heat treatment technique and aseptic technique. The heat treatment technology is simple in operation, easy for realization and low in cost; the piston rod produced by the method has smooth surface, strong corrosion resistance and wearing resistance, low rejection rate, long service life, and no air leakage. The technology accomplishes the heat treatment and anti-corrosion treatment at one time, has low treatment temperature, short time, and ability for improving the hardness, wearing resistance, corrosion resistance and fatigue strength of the surfaces of the parts simultaneously, reduces friction coefficient and lowers the brittleness of the piston rod, leads to small deformation, is nuisanceless and obviously expands the range of materials suitable to nitrocarburizing, namely the treatments of all materials have good effects, thus having the advantages of optimizing processing procedures, shortening production period and lowering production cost.

A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method also includes forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure. Further, the method includes removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen and performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate. Further, the method also includes forming a metal gate structure in the trench.

The invention discloses a biological nitrogen removal method based on anaerobic Feammox and application thereof. The biological nitrogen removal method comprises the following steps that sludge containing Feammox microorganisms is added into an anaerobic reactor, ammonia containing wastewater is led into the reactor, NH4 + in the Fe (III) NTA oxidized wastewater is utilized to generate NO2-, and then nitrogen treatment is performed. The biological nitrogen removal method comprises the specific steps that 1, the Feammox enriched microorganisms are cultivated: the sludge is pretreated and the Feammox microorganisms are cultivated; 2, the Feammox microorganisms are utilized to perform wastewater treatment; 3, nitrogen removal treatment is performed by using the liquid collected after anaerobic Feammox treatment. The method has the advantages of lower power consumption, few carbon source demands, less greenhouse gas emissions, less produced NO3- and the like, is lower in investment and operating costs and wide in application prospect.

The invention provides a washing method after etching openings. The method comprises the steps of providing a semiconductor substrate with a dielectric layer, etching openings to form at least one opening in the dielectric layer, carrying out a nitrogen treatment process to wash C-F polymer residue in the opening and finally carrying out a wet washing process.

The invention relates to a red fluorescent powder used by a white light LED and a preparation method thereof. The chemical composition formula of the fluorescent powder is A2-x-2mYmLimSi5-nAlnN8-pFp: XEu, wherein A is one or more of Ca, Ma, Sr and Ba; x is more than or equal to 0.01 but less than or equal to 0.1; m is more than or equal to 0.001 but less than or equal to 1; and p is more than or equal to 0 but less than or equal to n/2+3m. When metals are used as the raw materials, the nitrogen treatment is required. The preparation method thereof comprises the steps of: accurately weighting various nitride raw materials according to the chemometry, adding a given mass of fluxing agent, ball-milling the mixture for 2 hours, combining at high temperature by using a tubular resistor furnace, burning for 2 to 5 hours at 500 to 1650 DEG C, taking out after naturally cooling to lower than 100 DEG C, and then processing by using a grinding screen so as to acquire the finished product of the fluorescent powder. In the whole process, the ammonia is blown into and is used as the protecting, reducing and nitriding gas. The fluorescent powder can be efficiently aroused by the blue light and can emit the red light which has a peak value close to 620 nm.

The invention belongs to the technical field of plant cultivation and breeding and discloses a method for screening a variety with the highest nitrogen use ratio from various cut-flower chrysanthemum varieties, wherein the method comprises the following steps: a) acquiring a water planting seedling; b) performing the sandy culturing primary screening: dividing the water planting seedling into two groups, performing the low-nitrogen treatment on one group while performing the normal nitrogen treatment on the other group, respectively measuring the screening indexes of each variety containing the relative dry weight, relative nitrogen content and relative chlorophyll content, and then screening 2 to 6 varieties with higher nitrogen use ratio and 2 to 6 varieties with lower nitrogen use ratio for the purpose of performing comparison; and c) performing the nutrient solution cultivating repeated screening: cultivating the varieties screened from the step b) in the nutrient solution, and repeatedly screening one variety with the highest nitrogen use ratio and one variety with the lowest nitrogen use ratio. The cut-flower chrysanthemum variety which is finally screened by using the method is used for further improving the existing cut-flower chrysanthemum variety and providing the material for researching the biological characteristics and the physiologic biochemical system of the cut-flower chrysanthemum variety.

The invention discloses a metal substrate vertical GaN-based LED (Light-Emitting Diode) chip and a manufacturing method of the metal substrate vertical GaN-based LED chip. The LED chip is formed by compounding and depositing a metal substrate, an AlxGayIn1-x-yN buffer layer, an undoped AlxGayIn1-x-yN layer, an n-type doped AlxGayIn1-x-yN layer, an InxGa1-xN/GaN multi-quantum well (MQW) layer, a p-type AlxGa1-x-N layer, a p-type doped AlxGayIn1-x-yN layer, an n+ heavy doping type AlxGayIn1-x-yN layer and an indium tin oxide (ITO) layer, wherein an Ni/Au electrode layer is formed on the surface of the ITO layer. The method for manufacturing the metal substrate vertical GaN-based LED chip sequentially comprises the following steps of: arranging materials, performing plasma cleaning, performing nitrogen treatment, manufacturing a buffer layer, manufacturing an undoped layer, manufacturing an n-type doping layer, manufacturing a MQW layer, manufacturing a p-type doping layer, manufacturing a second p-type doping layer, and manufacturing an n+ heavy doping layer, the ITO layer and the electrode layer. The chip has the advantages of reasonable structure, wide spectrum range and the like, and the manufacturing method has the advantages of reasonable process, low temperature, environment friendliness, high quality of finished product, low manufacturing cost and the like.

A method for making a gate medium layer comprises the following steps that: a semiconductor substrate is provided; nitrogen treatment of the surface of the semiconductor substrate is carried out; and oxidation process of the surface of the semiconductor substrate is carried out after the nitrogen treatment so as to form an oxygenous medium layer. The invention also provides a method for making a grid electrode. The gate medium layer formed through the method has thinner thickness and better thickness evenness.

The invention discloses a cement-free in-situ silicon nitride combined silicon carbide prefabricated member and a preparation method thereof. The cement-free in-situ silicon nitride combined silicon carbide prefabricated member is formed by taking silicon carbide, metallic silicon powder, alumina micro powder, silicon dioxide micro powder and hydraulic alumina as materials and additionally adding dispersing agent, water or silica sol. The prefabricated member is formed by adopting a vibration pouring method, is cured and dried and subjected to high-temperature nitrogen treatment in a high-purity flowing nitrogen gas. The prefabricated member has the advantages of easy construction, low cost, flexible product shape, high hot strength, strong corrosion resistance, high wear resistance and the like and is widely applied to parts strictly requiring the hot-state performance, such as a wind-force pipeline of a cement kiln, a blast-furnace throat, an air port, a delivery pipeline of melt metal, a garbage incinerator and the like.

The present invention relates to a method for deamination and denitrification of residential quarter sewage, belonging to the field of sewage treatment technology. It is characterized by that after the sewage is passed through anaerobic filter tank, contact oxidation tank and precipitation tank to obtain treatment, then sewage can upwards flow and be fed into two parallel modified zeolite adsorption regeneration columns to implement ammonia and nitrogen adsorption at twice successively, so that said invention can obtain high ammonia and nitrogen treatment efficiency. Said invention also provides the regeneration method of the above-mentioned zeolite adsorption regeneration column by using backflush process.

A GaN/beta-Ga2O3 compound substrate material and its preparation method, it is equipped with one GaN overburden layer constituted on beta-Ga2O3 single crystal. This compound substrate material preparation method is: Forming the GaN overburden layer with the use of perfect vacuum nitrogen treatment stove on beta-Ga2O3 single crystal substrate, then through anneal processing, obtaining the crystallized GaN thin film on beta-Ga2O3 single crystal substrate. The advantages are simple technology easy operation, suitable for the extension growth of high grade GaN.

The invention relates to preparation of a high-energy density and long-lived MnO2/TiO(1-x)Nx supercapacitor material, which comprises the steps of: (1) preparing a titanium dioxide nanotube by using an anodic oxidation method, that is, a titanium foil with the thickness being 50+/-10 micrometers and the purity being 99.8% is taken as an anode, wherein one side of the titanium foil is contacted with an ethylene glycol electrolyte solution, and cathode is also made of the titanium foil; the stability of the electrolyte solution is kept at constant 20+/-5 DEG C, voltage between the anode and the cathode is kept at 50+/-8V, and a TiO2 nanotube array is acquired; (2) carrying out thermal insulation nitrogen treatment on the TiO2 nanotube at a temperature of 600 DEG C-900 DEG C for 35+/-15 minutes in a tubular furnace to acquire a TiO(1-x)Nx nanotube array, wherein 0.6>=x>0; and (3) depositing a manganese dioxide nanolayer on the surface of the TiO(1-x)Nx nanotube array, thereby acquiring the flexible supercapacitor material.

The invention provides a nitrogen treatment and destressing process and adopts a technical scheme which is characterized by comprising the following steps of: placing a blank of a cylinder sleeve into a tempering furnace after rough machining of an inner bore and rough turning of an excircle; heating to 240 DEG C at a speed of not more than 50 DEG C per hour and keeping warm for 1 hour; uniformly heating to 460 DEG C and keeping warm for 1 hour; uniformly heating to 560 DEG C and keeping warm for 2 hours; taking the blank of the cylinder sleeve out from the tempering furnace after cooling to about 260 DEG C at a speed of less than 30 DEG C/H per hour; putting the machined cylinder sleeve, which passes an inspection, into a nitriding furnace after being cleaned and introducing ammonia into the nitriding furnace; slowly heating the nitriding furnace at the speed of less than 50 DEG C/H and emptying air in the nitriding furnace at 200 DEG C; heating to 510-510 DEG C at the speed of not more than 50 DEG C/H; keeping warm for 4 hours in the condition that the ammonia resolution ratio is 60-70%; keeping warm for 3 hours at a temperature of 510-520 DEG C in the condition that the ammonia resolution ratio is 70-80%; and cooling to 180 DEG C at the speed of not more than 50 DEG C/H and taking the cylinder sleeve out of the nitriding furnace.

The invention discloses a method for low-laser-power preparation of a TiN gradient coating on a titanium alloy surface. The high-hardness and good-abrasion-performance TiN coating is obtained through the technological steps of titanium alloy base pretreatment, air supply treatment and laser nitrogen treatment. The TiN coating prepared through the method and a titanium alloy base layer are subject to metallurgical bonding, the coating is compact, and gaps and cracks are avoided; the hardness of the TiN coating is greatly improved compared with a titanium alloy base, and the hardness is gradually increased from an interface to the coating and is increased by 4 times to 5 times to the greatest extent; and compared with a traditional nitriding technological process, the preparing environment is under the normal temperature atmosphere scope, an air sealing device is not needed, powder or a pre-coating material is not needed, requirements for the base material, specification and size are avoided, local nitriding on the base material can be carried out, other materials are not needed except for nitrogen, cost is low, the technology is simple, efficiency is high, and industrialization is easy to achieve.

The invention relates to a novel method for carrying out low-temperature surface catalysis and nitriding on alloy cast iron, belongs to the technical field of the surface chemical heat treatment application of metal materials and is suitable for low-temperature and rapid surface nitrogen treatment (in the strengthening nitriding process, the temperature is less than 480 DEG C and the time is less than 10 hours; and in the corrosion-resisting nitriding process, the temperature is between 500 and 520 DEG C and the time is less than 4 hours) of an alloy cast iron cylinder sleeve and an alloy cast iron piston ring. Based on the surface catalysis theory, the invention designs an active catalyst component, utilizes an adjustable bidirectional pulse power supply to form a catalytic film, i.e. a surface catalyst, on the surface of the alloy cast iron, improves the activity that the metal surface carries out catalytic decomposition on ammonia at the low temperature and also effectively adsorbs the decomposed free nitrogen to form a nitrogen adsorption layer. Moreover, the catalyst can permeate into a substrate to form solid solution so as to promote the diffusion rate of nitrogen. Compared with the conventional gas nitriding method, the process increases a working procedure of adjustable bidirectional pulse surface deposition treatment. The working procedure has the advantages of stable conditioning fluid and short processing time. The novel process is suitable for the existing gas nitriding equipment.

The invention discloses a manufacturing method for a semiconductor device. The manufacturing method for the semiconductor device comprises: a) a semiconductor substrate is provided, wherein the semiconductor substrate comprises a P-type transistor area and an N-type transistor area, and a gate dielectric layer and a covering layer are sequentially formed on the semiconductor substrate; b) a photoresist layer which exposes the P-type transistor area is formed on the covering layer; c) nitrogen treatment process is carried out, and nitrogen is mixed in the gate dielectric layer and the covering layer of the P-type transistor area; d) the photoresist layer is removed. By the fact that the nitrogen-atoms are mixed in the gate dielectric layer and the covering layer of the P-type transistor area to replace oxygen atoms at the interface, effective work function value of the covering layer in the P-type transistor area is increased, threshold voltage of a P-type transistor is reduced, so that the covering layer can be matched with work function layers of the P-type transistor area and the N-type transistor area at the same time.

The invention provides a method for manufacturing cutter shafts of longitudinally-shearing disc scissors. The method includes the steps of material selection, rough machining, thermal treatment, center hole lapping, external circle accurate grinding, polishing and combination of a reasonable thermal treatment procedure (quenching and tempering, high-temperature tempering, low-temperature tempering and oil boiling), surface nitrogen treatment, a three-time center hole lapping and grinding technology (rough grinding, semi-accurate grinding, rounding, accurate grinding and fine grinding) and a grinding and polishing technology, so that the longitudinally-shearing disc scissors is in a high accuracy state in the process of production, a machining and manufacturing technical method without deformation and abrasion is conducted, through technological innovation of a measurement method and bold development of a measurement instrument in the manufacturing process, the high-accuracy cutter shafts of the longitudinally-shearing disc scissors are measured through a pneumatic measurement instrument according to the comparative measurement method, and the error of the two cutter shafts with the diameter absolute error within 0.002 mm is measured. By the adoption of the high-accuracy cutter shafts manufactured through the method and the technological process, key indexes such as the diameter tolerance and the roundness of the cutter shafts can reach and even exceed technical indexes of cutter shafts of import disc scissors.

The invention discloses a laser microscopy processing method of a porous surface structure. Firstly, adopting a laser gas nitrogen treatment mode to perform surface treatment to a processed surface; then, performing laser microscopy processing. The invention has the advantages that the method can obtain an omega-shaped porous surface structure with wide application range, the porous surface structure can form certain array form or other arrangement forms satisfying using requirements, and the depth, ratio between depth and diameter, distribution density and the like of holes can be designed and adjusted according to using requirements. The invention has favourable characteristics of satisfying using requirements in medical fields and the like and has foreseeable huge economic value and social value.

The invention relates to a preparation method of titanium nitride-ferrous metal ceramics. The preparation method comprises the steps of preparing a titanium-ferrous (Ti-Fe) alloy cast ingot with a vacuum melting method to enable Fe to exist in Ti in a form of solid solution and TiFe intermediate phase; carrying out hydrogenation embrittlement, ball-milling crushing and dehydrogenation and nitrogen treatment on the Ti-Fe alloy cast ingot to obtain titanium nitride-ferrous (TiN-Fe) metal-ceramic composite powder; sintering the composite powder subjected to green compacting to obtain a TiN-Fe metal-ceramic material. The TiN-Fe metal-ceramic composite powder prepared by the method provided by the invention consists of two phases, i.e. TiN and Fe, and is uniform in powder size and good in fluidity, the TiN-Fe block metal-ceramic material obtained by sintering the TiN-Fe metal-ceramic composite powder subjected to green compacting is uniform in phase distribution and relatively high in density, and the average microscopy Vickers hardness of the materials reaches 1023 HV.