506 results about "Indium tin oxide" patented technology

The invention relates to the technical field of flexible pressure sensors, in particular to a preparation method and application of a capacitance flexible pressure sensor with an adjustable gradient random micro-cone structure, and the sensor comprises an upper electrode and a lower electrode which are transparent indium tin oxide conductive films (PET / ITO); the packaging layer is a polyimide (PI) adhesive tape and covers the outer side of the electrode; the flexible isolation layer is polydimethylsiloxane (PDMS) with a hollow structure, and is positioned between the upper electrode and the lower electrode; the dielectric layer of a gradient random micro-cone structure is located in the flexible isolation layer and is formed by compounding polyvinyl alcohol (PVA) and phosphoric acid (H3PO4) according to the mass ratio of 1: 1; the gradient micro-cone structure and the ionization effect are combined, the electric double layer effect grading phenomenon occurs, and the gradient micro-cone sensor has the advantages of being high in sensitivity, wide in detection range, capable of keeping linearity under large pressure, short in response time and good in cycling stability.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention relates to the technical field of materials adaptive to extreme environments, and discloses cross-scale gradient co-doped multifunctional composite aerogel as well as a preparation method and application of the cross-scale gradient co-doped multifunctional composite aerogel. The multifunctional composite aerogel is co-doped with ultraviolet light-screening agent nano-particles, infrared light-screening agent nano-particles and functional nano-particles in a cross-scale gradient manner, and is used for performing selective filtration and full-spectrum regulation and control on sunlight penetrating through the transparent aerogel; the ultraviolet light-screening agent particles are titanium dioxide nano particles; the infrared opacifying agent particles are indium tin oxide nanoparticles; and the functional nanoparticles are silver nanorods. The composite aerogel provided by the invention improves the anti-ultraviolet performance and high-temperature heat insulation performance of the aerogel and provides a function of enhancing photosynthesis of plants, and meanwhile, the transmittance of the transparent aerogel in the visible light band of sunlight is not obviously reduced.

The invention relates to the technical field of electronic devices, in particular to a synaptic memristive device with a vertical structure and a preparation method and application of the synaptic memristive device. The invention provides a synaptic memristor with a vertical structure. The synaptic memristor structurally comprises a substrate, a bottom electrode, an active layer, an electrolyte layer and a top electrode which are stacked in sequence. Wherein the active layer is a vanadium pentoxide film which is excellent in electrical property and optical response, and the sensitivity and plasticity of the device can be improved; the electrolyte layer adopts polyethylene oxide ionic glue, so that the resistance change characteristic of the active layer can be adjusted, the reaction between the active layer and the top electrode can be prevented, and the service life of the device is prolonged; the bottom electrode is an indium tin oxide thin film, has good compatibility with an active layer interface, can promote oxygen vacancy migration, and optimizes the resistance switching performance. Through mutual coordination of the materials, the device can generate microampere-level current under millivolt-level stimulation, shows high-sensitivity synaptic plasticity, and is suitable for a high-performance neuromorphic computing system.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention discloses a single-layer liquid crystal reflection type liquid crystal color display module and a preparation method thereof. The display module comprises a light absorption layer, a lower substrate, a red-green-blue three-primary-color reflection type cholesteric liquid crystal layer and an upper substrate which are sequentially arranged. The lower substrate is provided with a TFT electrode, the upper substrate is provided with a conductive indium tin oxide layer, the face, containing the TFT electrode, of the lower substrate is arranged upwards, the red-green-blue three-primary-color reflective cholesteric liquid crystal layer comprises a plurality of polyimide separating walls, and a micron-sized thin-wall container is formed between every two adjacent polyimide separating walls. And three adjacent micron-sized thin-wall containers form a group of pixel strips. Through formula improvement and process upgrading, the reflectivity of the display module is remarkably enhanced, color reflection is brighter, the visual angle characteristic of a display device is improved, the sensitivity to the observation angle is reduced, the display brightness and the light utilization rate are improved, and systematic optimization of reflection efficiency is achieved.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The utility model discloses a heterojunction cell and a photovoltaic module, and relates to the technical field of photovoltaics. The heterojunction cell comprises a first transparent conductive layer, an n-type microcrystalline silicon layer, a first intrinsic amorphous silicon layer, an n-type monocrystalline silicon layer, a second intrinsic amorphous silicon layer, a p-type microcrystalline silicon layer and a second transparent conductive layer which are stacked in sequence. The heterojunction cell also includes a first electrode connected to the first transparent conductive layer and a second electrode connected to the second transparent conductive layer. Wherein the first transparent conductive layer comprises a first zinc oxide layer, a first indium tin oxide layer and a first titanium oxide layer which are stacked in sequence. The transparent conductive layer is arranged to be a composite layer structure made of three materials, so that the use amount of expensive indium tin oxide can be remarkably reduced, and the cost is reduced. The first conductive film with the composite layer structure can also relieve the problem of ultraviolet-induced degradation of the heterojunction cell, improve the performance stability of the cell and prolong the service life of the cell.

The invention provides a titanium-based ceramic target material and a preparation method and application thereof.The titanium-based ceramic target material is prepared from, by mass, 96.4 wt%-98.3 wt% of titanium oxide and 1.7 wt%-3.6 wt% of doped oxide, and the doped oxide is prepared from, by mass, 0.8 wt%-1.5 wt% of niobium oxide, 0.5 wt%-1.0 wt% of tantalum oxide, 0.3 wt%-0.8 wt% of tungsten oxide and 0.1 wt%-0.3 wt% of aluminum oxide. According to the method, the high-performance titanium-based ceramic target material is prepared by adopting a normal-pressure sintering method through multi-element synergistic doping and dynamic regulation and control of the sintering atmosphere, the titanium-based thin film prepared by sputtering the titanium-based ceramic target material can form a laminated thin film structure with an indium tin oxide (ITO) thin film, and high conductivity, high visible light transmittance and high electron mobility are achieved; and the actual requirements in the field of silicon-based and perovskite solar cells are met.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) manufacturing process etching processes, in particular to a silver etching solution for an OLED manufacturing process as well as a preparation method and application of the silver etching solution. The silver etching liquid comprises nitric acid, phosphoric acid, a buffer agent, a metal ion chelating agent and an ionic liquid inhibitor, the ionic liquid inhibitor comprises 1-butyl-3-methylimidazole phosphate, the metal ion chelating agent is selected from at least one of pyromellitic acid, diethylenetriamine pentaacetic acid and ethylenediamine tetramethylene phosphoric acid, and the buffer agent is selected from at least one of sodium chloride, sodium chloride and sodium chloride. The buffering agent comprises acetic acid, and all the components are prepared according to a specific mass ratio. The etching solution can balance the etching rate of silver and indium tin oxide, avoid silver residues and black spot defects, prolong the service life of the solution, reduce the use of a volatile buffer agent, adapt to the OLED fine manufacturing process, improve the product yield and reduce the production cost, and is suitable for etching of a metal substrate in the OLED manufacturing process.

The invention provides high-temperature-resistant indium tin oxide (ITO) conductive glass and a preparation method thereof, and relates to the field of transparent conductive materials.The preparation method of the ITO conductive glass comprises the steps that firstly, a glass substrate is cleaned, and the clean glass substrate is placed on a magnetron sputtering preparation table; meanwhile, an ITO ceramic target material, a SnO2 ceramic target material and a Si3N4 ceramic target material are installed on different fixed targets of magnetron sputtering equipment respectively, then a bottom layer SnO2 thin film, an ITO thin film, a middle SnO2 thin film, a Si3N4 thin film and a top layer SnO2 thin film are sequentially deposited on the glass substrate through the magnetron sputtering technology, and a SnO2 / ITO / SnO2 / Si3N4 / SnO2 composite thin film structure is formed on the surface of the glass substrate; the conductive glass prepared by the method disclosed by the invention can still keep stable electrical properties and relatively high light transmittance in a high-temperature environment, meets the strict requirements on materials in the fields of semiconductor device manufacturing, solar cells and the like, and promotes the development of related industries.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

To provide an electrophotographic apparatus and a process cartridge each suppressing the occurrence of image smearing in an output image under a high-temperature and high-humidity environment, provided are the following electrophotographic apparatus and process cartridge. That is, provided are an electrophotographic apparatus including: an electrophotographic photosensitive member; a charging unit; an image exposing unit; a developing unit; and a transferring unit, wherein the electrophotographic photosensitive member includes a surface layer containing indium tin oxide particles and a (meth)acrylic resin, and wherein the toner contains strontium titanate particles as an external additive, and a process cartridge.

The invention relates to a dual-band silver-based electrochromic device for dynamically regulating and controlling sun and mid-infrared radiation and application thereof.The device comprises two transparent conductive electrodes, silver-based gel electrolyte and a transparent packaging material, the two transparent conductive electrodes serve as a working electrode and a counter electrode respectively, the transparent conductive electrodes are indium tin oxide-quartz glass electrodes, and the silver-based gel electrolyte is arranged between the two transparent conductive electrodes. The working electrode is made of single-sided indium tin oxide-quartz glass, the counter electrode is made of double-sided indium tin oxide-quartz glass, the working electrode and the counter electrode are arranged in parallel and in a staggered manner and are bonded and fixed through a transparent packaging material, and then a silver-based gel electrolyte is injected between the two transparent conductive electrodes, so that the silver-based gel electrolyte is formed. And an electrode-electrolyte-electrode three-layer structure is formed. Compared with the prior art, the device has excellent sunlight and mid-infrared dual-band radiation modulation capability, is controllable in composition and structure and easy to expand, and has great application prospects in the aspect of all-season dynamic thermal management of transparent enclosure structures such as buildings and automobiles.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

The invention belongs to the technical field of optical glass. The invention relates to an electrochromic glass device, in particular to a preparation method of the electrochromic glass device. The preparation method comprises the following specific preparation steps: cleaning the surface of a glass substrate, and depositing an indium tin oxide transparent conductive layer on the surface of the glass substrate by adopting magnetron sputtering; the preparation method comprises the following steps: by taking nano spherical silicon dioxide as a template, dispersing the nano spherical silicon dioxide in an ethanol solution, then adding a sodium tungstate solution, then adjusting the pH value to 2-3, carrying out a stirring reaction, and then cleaning with a sodium hydroxide solution to remove the template so as to obtain a hollow spherical precursor dispersion liquid; coating the hollow spherical precursor dispersion liquid on the surface of the transparent conductive layer in a spin coating mode, drying and annealing; preparing a liquid electrolyte: taking propylene carbonate as a solvent, and taking lithium perchlorate as an electrolyte lithium salt; niO is deposited on the surface of the WO3 electrochromic layer to serve as a counter electrode through magnetron sputtering; epoxy resin is adopted to package the edge, after liquid electrolyte is injected, internal residual bubbles are removed through hot pressing, and the product is obtained.

The invention belongs to the technical field of solar cells, and discloses a preparation method of a high-efficiency and low-cost copper electroplating heterojunction solar cell. The preparation method of the efficient low-cost copper electroplating heterojunction solar cell comprises the steps of texturing and cleaning, amorphous silicon thin film deposition, transparent conductive thin film deposition, surface patterning, copper grid line electroplating and the like. According to the preparation method, the usage amount of the indium tin oxide thin film can be effectively reduced, the optical absorption of the TCO thin film is reduced by using the laminated structure, and the conversion efficiency and the corrosion resistance of the cell are improved.

The utility model relates to the field of laser processing, in particular to a novel silicon-based liquid crystal spatial light modulator, which is characterized by sequentially comprising a complementary metal oxide semiconductor (CMOS) silicon-based back plate (100), a central symmetry aluminum pixel electrode layer (101), a medium reflecting layer (102), a lower orientation layer (103), a liquid crystal molecular layer (104), an upper orientation layer (105), an indium tin oxide (ITO) electrode layer (106), a glass substrate (107) and an anti-reflecting layer (108) from bottom to top. According to the utility model, the reflectivity, the diffraction efficiency and the phase flatness of the silicon-based liquid crystal spatial light modulation device are improved, the electric field is uniformly distributed, the fringe field effect is reduced, the switching speed of phase modulation is effectively improved, the laser processing efficiency and quality are greatly improved, and more laser processing modes are realized. The technical scheme provided by the utility model can be applied to multiple fields of invisible cutting, laser marking, laser welding and the like.

The invention provides a wide-spectrum dual-photoelectrode-based photoelectrochemical sensor and a preparation method and application thereof, and belongs to the technical field of photoelectrochemical sensors. According to the photoelectrochemical sensor provided by the invention, a BCN / ITO electrode is used as a photoanode, a CuInS2 / ITO electrode is used as a photocathode, BCN is Bi2S3 / C3N4, and ITO is indium tin oxide. The sensor is used for detecting enrofloxacin and ciprofloxacin pollution. According to the present invention, the surface is modified with the aptamer having the specific recognition function, the specific binding effect of the aptamer with the enrofloxacin and the ciprofloxacin is utilized to form the complex of the aptamer and the target object, and the influence of the caused steric hindrance effect on the photoelectric signal and the dual-channel strategy are utilized to achieve the simultaneous detection of the residual marker; the linear ranges for detecting enrofloxacin and ciprofloxacin are 0.1 nM to 1 mu M and 50 pM to 0.5 mu M respectively, the detection limits are 24 pM and 15.5 pM respectively, and the method is successfully applied to simultaneous detection of residual markers in water. The method has the advantages of greenness, environmental protection, wide detection range, high sensitivity, good selectivity and high stability.

The invention relates to the technical field of PVB heat-insulating films, in particular to a PVB heat-insulating film based on indium tin oxide and bronze cesium tungsten compounding and a preparation method thereof.The PVB heat-insulating film is prepared from, by weight, 80-120 parts of PVB resin, 20-50 parts of oily plasticizer, 0.1-2.0 parts of silane coupling agent, 0.1-1.0 part of antioxidant, 0.1-1.0 part of ultraviolet light absorber, 1-5 parts of polyethylene glycol derivative and 1-5 parts of compound dispersion slurry, the weight ratio of the indium tin oxide powder to the bronze cesium tungsten powder in the compound dispersed slurry is (5: 5)-(7: 3). According to the PVB heat-insulating film based on indium tin oxide and cesium tungsten bronze compounding and the preparation method, the prepared PVB heat-insulating film has high visible light transmittance and excellent near-infrared light rejection rate, meanwhile, the Faraday cage effect can be effectively avoided, and the signal shielding problem is avoided.

The invention relates to the technical field of optical functional film manufacturing, in particular to a multi-layer structure of a high-light-transmittance composite brightness enhancement film and a processing method of the multi-layer structure, and the multi-layer structure sequentially comprises a surface hardening layer, a high-refractive-index composite layer, a light diffusion layer, a conductive functional layer, a microstructure layer and a bonding layer from a light incident side to a light emergent side; the surface hardening layer is composed of fluorine-containing modified polyethylene glycol terephthalate (PET), the high-refractive-index composite layer comprises a composite layer of rutile type nano titanium oxide particles and methyl phenyl silicone resin, and the light diffusion layer is a cross-linked layer formed by mixing bisphenol A type epoxy acrylate and trimethylolpropane triacrylate according to the mass ratio of 4.2: 1. The conductive functional layer is an indium tin oxide (ITO) thin film, the microstructure layer is a prism array layer formed by nickel template imprinting, the optical performance of the film is remarkably improved, and the light transmittance of the wavelength of 550 nm reaches 93.5%-93.8% through the optical matching design of the composite structure and is improved by 3-5% compared with similar products.

The invention belongs to the technical field of textile materials, and relates to an environment-adaptive multi-spectrum camouflage cloak and a preparation method thereof. Comprising a cloak body, the cloak body is made of composite fabric, the composite fabric sequentially comprises a wear-resistant layer, a waterproof layer and a close-fitting layer from outside to inside, and the surface of the wear-resistant layer is sequentially coated with a thermochromic dye layer, a far infrared plating layer and a visible light hiding layer from bottom to top; the thermochromic dye layer is formed by compounding disperse dye and bistable thermochromic microcapsules, and the visible light stealth layer is prepared from photonic crystal gel; and the far infrared plating layer is prepared from an indium tin oxide film. The desert camouflage is switched below 5 DEG C, the woodland camouflage is switched above 60 DEG C, and different regional environments are matched; according to efficient multi-spectrum camouflage, the color difference between the visible light band and the background is smaller than or equal to 1.95, three emissivity levels are formed in the infrared band, and the thermal imaging detection probability is reduced.

A low-absorption and high-emission thermal control coating resistant to high-dose ionizing radiation and its preparation method, which relates to the field of spacecraft thermal control coatings. The thermal control coating includes a bottom coating, a middle coating, and a top coating sequentially arranged on the surface of a substrate; the bottom coating includes barium sulfate, cerium oxide, and a binder; the middle coating includes hollow glass microspheres, a binder, and an inorganic dispersant; the top coating includes indium tin oxide and a binder. It greatly increases the scattering ability of different spectral energies of sunlight and the tolerance to vacuum ionizing radiation, enabling it to meet the design requirements of high precision and long life of modern new spacecraft.

The invention relates to a solar cell piece and a preparation method of the solar cell piece, and belongs to the field of photovoltaic technology, the solar cell piece at least comprises a substrate, a tunneling oxide layer, a tin oxide layer and a doped polycrystalline silicon layer, the tunneling oxide layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the tin oxide layer is arranged on the surface of the substrate along the thickness direction of the substrate. The tin oxide layer is arranged on the surface of the tunneling oxide layer in the thickness direction of the substrate, and the doped polycrystalline silicon layer is arranged on the surface of the tin oxide layer in the thickness direction of the substrate, so that the tin oxide layer is located between the tunneling oxide layer and the doped polycrystalline silicon layer. The ratio F of the number of oxygen atoms to the number of tin atoms in the tin oxide layer is larger than or equal to 1.9 and smaller than or equal to 2.1. The tin oxide layer is arranged between the tunneling oxide layer and the doped polycrystalline silicon layer, and the tin oxide layer has excellent conductivity and light transmission, so that parasitic absorption can be reduced, more light can be absorbed by the substrate, and the photoelectric conversion efficiency of the solar cell is improved.

The invention discloses an ultra-large octave antenna based on an organic photoconductive material, and belongs to the field of metamaterials and antennas. Comprising an organic photoconductor film electromagnetic surface and a digital light processing module capable of projecting different patterns on the surface of the organic photoconductor film electromagnetic surface, the organic photoconductor film electromagnetic surface can change conductivity distribution through light control, and the digital light processing module can dynamically adjust the size and shape of the patterns projected on the organic photoconductor film electromagnetic surface. Therefore, a reconfigurable antenna array is generated, and cross-multi-octave ultra-wideband electromagnetic wave signal receiving and transmitting are realized. The electromagnetic surface of the organic photoconductor film sequentially comprises a photoconductive material layer, a first light-transmitting glass layer, an indium tin oxide microstrip line feed layer, a second light-transmitting glass layer and a substrate indium tin oxide layer according to a lamination sequence. According to the invention, the problems of narrow bandwidth, slow response and high cost of a traditional reconfigurable antenna are solved.

The present invention relates to the field of intelligent sensing technology, and in particular to a method for preparing a photoelectric memristor array and an application of the photoelectric memristor array. The photoelectric memristor device array comprises a substrate layer NSTO and a top electrode layer ITO from bottom to top; the substrate layer is an NSTO oxide semiconductor, a laser direct writing technology is used to define the pattern of the memristor device on the substrate layer, and then a pulsed laser deposition technology PLD is used to deposit transparent indium tin oxide ITO thereon, and the photoelectric memristor device array achieves low latency, low energy efficiency and high working efficiency.

The utility model relates to an LCM (liquid crystal module) touch color display screen, which comprises lower glass and upper glass, the lower glass is single-sided ITO (indium tin oxide) glass, the upper glass is double-sided ITO glass, a display circuit is arranged on a binding surface of the lower glass and the upper glass, and the display circuit comprises a group of control display patterns and a group of state display patterns. The upper end face of the upper glass sheet is provided with a group of touch frame-shaped lines, one side of the upper glass sheet is provided with a group of touch pins, each touch frame-shaped line corresponds to one touch pin, and a touch conduction wire is arranged between the touch frame-shaped lines and the touch pins; and each touch frame-shaped circuit covers one control display graph. The problem that an existing touch display screen is high in production cost can be solved.

The invention relates to the technical field of solar cells, and particularly discloses a functional film layer structure for a solar cell, the solar cell and a preparation method of the solar cell. The functional film layer structure comprises a dielectric passivation layer and an ultraviolet light absorption layer which are sequentially arranged on the surface of a cell substrate, the ultraviolet light absorption layer is at least one of a zinc oxide layer, a gallium nitride layer and an indium tin oxide layer, and the thickness of the ultraviolet light absorption layer is 0.5-3 nm. Through the cooperation of the dielectric passivation layer and the ultraviolet light absorption layer, on the premise that the absorption of the functional film layer structure on 300-1200 nm wave band light is reduced as much as possible, the functional film layer structure can better absorb and filter out ultraviolet light in natural light, the ultraviolet resistance of the solar cell is improved, ultraviolet induced attenuation is reduced, sintering abnormity does not occur, and the service life of the solar cell is prolonged. The series resistance is not obviously increased, and the passivation effect of the solar cell can be improved, so that the functional film layer structure is beneficial to improving the electrical property of the solar cell and prolonging the service life of the solar cell.