798 results about "Indium tin oxide" patented technology

The invention relates to the technical field of flexible pressure sensors, in particular to a preparation method and application of a capacitance flexible pressure sensor with an adjustable gradient random micro-cone structure, and the sensor comprises an upper electrode and a lower electrode which are transparent indium tin oxide conductive films (PET / ITO); the packaging layer is a polyimide (PI) adhesive tape and covers the outer side of the electrode; the flexible isolation layer is polydimethylsiloxane (PDMS) with a hollow structure, and is positioned between the upper electrode and the lower electrode; the dielectric layer of a gradient random micro-cone structure is located in the flexible isolation layer and is formed by compounding polyvinyl alcohol (PVA) and phosphoric acid (H3PO4) according to the mass ratio of 1: 1; the gradient micro-cone structure and the ionization effect are combined, the electric double layer effect grading phenomenon occurs, and the gradient micro-cone sensor has the advantages of being high in sensitivity, wide in detection range, capable of keeping linearity under large pressure, short in response time and good in cycling stability.

The invention discloses an automobile heat-insulating film and a preparation method thereof, and belongs to the technical field of heat-insulating films, and the heat-insulating film is prepared by introducing nanometer indium tin oxide, nanometer tungsten oxide, nanometer titanium oxide, nanometer zinc oxide and other nanometer oxides and combining with a modified material. The preparation method comprises the following steps: mixing nano oxide with water, performing ultrasonic dispersion, adding a coupling agent and a modified material to form composite slurry, mixing the composite slurry with polymers such as polyethylene glycol terephthalate and a plasticizer, coating the surface of glass with the mixture, and drying. Compared with the prior art, the obtained heat insulation film not only has excellent optical transparency and heat insulation effect, but also shows good mechanical property and environmental erosion resistance, and meets the strict requirements of modern automobiles on heat insulation and protection performance.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention relates to the technical field of materials adaptive to extreme environments, and discloses cross-scale gradient co-doped multifunctional composite aerogel as well as a preparation method and application of the cross-scale gradient co-doped multifunctional composite aerogel. The multifunctional composite aerogel is co-doped with ultraviolet light-screening agent nano-particles, infrared light-screening agent nano-particles and functional nano-particles in a cross-scale gradient manner, and is used for performing selective filtration and full-spectrum regulation and control on sunlight penetrating through the transparent aerogel; the ultraviolet light-screening agent particles are titanium dioxide nano particles; the infrared opacifying agent particles are indium tin oxide nanoparticles; and the functional nanoparticles are silver nanorods. The composite aerogel provided by the invention improves the anti-ultraviolet performance and high-temperature heat insulation performance of the aerogel and provides a function of enhancing photosynthesis of plants, and meanwhile, the transmittance of the transparent aerogel in the visible light band of sunlight is not obviously reduced.

The invention relates to the technical field of electronic devices, in particular to a synaptic memristive device with a vertical structure and a preparation method and application of the synaptic memristive device. The invention provides a synaptic memristor with a vertical structure. The synaptic memristor structurally comprises a substrate, a bottom electrode, an active layer, an electrolyte layer and a top electrode which are stacked in sequence. Wherein the active layer is a vanadium pentoxide film which is excellent in electrical property and optical response, and the sensitivity and plasticity of the device can be improved; the electrolyte layer adopts polyethylene oxide ionic glue, so that the resistance change characteristic of the active layer can be adjusted, the reaction between the active layer and the top electrode can be prevented, and the service life of the device is prolonged; the bottom electrode is an indium tin oxide thin film, has good compatibility with an active layer interface, can promote oxygen vacancy migration, and optimizes the resistance switching performance. Through mutual coordination of the materials, the device can generate microampere-level current under millivolt-level stimulation, shows high-sensitivity synaptic plasticity, and is suitable for a high-performance neuromorphic computing system.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention relates to an embedded rolling bearing with a source end parameter acquisition system and a manufacturing method of the embedded rolling bearing. The embedded rolling bearing comprises a bearing body, and a containing groove is formed in the peripheral face of the bearing body; the thin film sensor assembly is formed in the accommodating groove, and comprises a PDC-ITO (Poly (Propylene Diene Monomer-Indium Tin Oxide)) strain element, a PDC-Pt (Poly (Propylene Diene Monomer)-Pt) temperature element, a PDC-PZT (Poly (Poly (Propylene Diene Monomer)-PZT) piezoelectric thin film and a plurality of bonding pads which are respectively matched with the PDC-ITO strain element, the PDC-Pt temperature element and the PDC-PZT piezoelectric thin film; the acquisition microstructure is arranged in the accommodating groove and comprises a PCB (Printed Circuit Board) and a functional chip which is formed on the PCB and is electrically connected with the plurality of bonding pads through a plurality of electrical interconnection sockets; the heat insulation pouring sealant is poured into the accommodating groove; and a metal cover. Normal installation of the bearing is achieved to the maximum extent, and the defect that the appearance and the size of a traditional external sensor and a traditional collector are limited is overcome.

The invention relates to a low-temperature-resistant epoxy resin adhesive and a preparation method thereof, and belongs to the technical field of high polymer materials. The modified epoxy resin adhesive comprises the following components in parts by weight: 90-120 parts of epoxy resin, 8-24 parts of a curing agent, 1-3 parts of a diluent, 0.5-5 parts of a curing accelerator, 4-18 parts of graphite, 1-4 parts of a hyperbranched polymerization flexibilizer and 10-30 parts of conductive filler, polyimide in the hyperbranched polymerization flexibilizer is difficult to crystallize, has no interchain winding, and cooperates with a flexible Si-O-Si chain segment with high bond energy and large bond angle to enhance low-temperature tensile strength and toughness, and chloroprene rubber effectively improves impact resistance and bending resistance; according to the low-temperature-resistant epoxy resin adhesive disclosed by the invention, a conductive network is constructed by indium tin oxide, good conductivity and chemical corrosion resistance are given to a matrix, a polyaniline layer is used for modifying a structural body and enhancing interface adhesion, and the prepared low-temperature-resistant epoxy resin adhesive not only has good low-temperature-resistant toughening and conductive effects, but also has excellent corrosion-resistant and flame-retardant effects.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The utility model discloses a hardened anti-blue-light resin car room lens, which comprises a resin substrate, an anti-blue-light resin layer and an anti-blue-light resin layer, the composite hardened film layer group is dip-coated on the surface of the resin substrate and comprises an organic silicon bottom layer, a silicon-zirconium mixed layer and an organic silicon outer layer; the anti-blue-light film layer is plated on the surface of the composite hardened film layer group and comprises a silicon dioxide layer, a titanium dioxide layer, a silicon dioxide layer, a titanium dioxide layer, a silicon dioxide layer and an indium tin oxide layer from inside to outside; the ultraviolet light curing protective layer is spin-coated on the surface of the blue light preventing film layer; and the silicon fluoride layer is arranged on the surface of the ultraviolet curing protective layer. By arranging the composite hardened film layer group consisting of the organic silicon bottom layer, the silicon-zirconium mixed layer and the organic silicon outer layer, the hardness of the resin substrate is improved, and meanwhile, the blue-light-proof film layer is plated on the outer side, so that the blue-light-proof effect is enhanced by combining the six layers of films.

The invention provides a preparation method of an ETFE fluorofilm plate with excellent comprehensive performance, and belongs to the technical field of manufacturing of high-performance building materials. According to the preparation method, a metal plate plated with an aluminum-zinc alloy film layer serves as a substrate, and the upper surface and the lower surface of the substrate are each provided with a composite plating layer. The composite coating comprises a silicon dioxide-carbon tube coating, an indium tin oxide coating, a wear-resistant layer, an ETFE fluorine film layer and a wear-resistant hydrophobic layer. The ETFE fluorine diaphragm plate prepared by the method not only has excellent corrosion resistance and excellent heat insulation performance, but also has good scratch-resistant protection and weather resistance, and particularly, the coated wear-resistant hydrophobic layer effectively reduces the adhesion of moisture on the surface of the diaphragm plate, improves the self-cleaning performance of the diaphragm plate, reduces the maintenance cost, and is suitable for large-scale popularization and application. The introduction of the layer not only protects the surface of the film, but also enhances the stability of the film in the long-term use process. The ETFE fluorine film plate prepared by the method is suitable for various high-performance building requirements, and shows a wide application prospect.

The invention discloses a fluidized collision type bioelectric reaction device suitable for high-carbon sewage treatment. The device comprises a reactor body, a capacitive electroactive biofilm carrier, an anode plate and a cathode plate. The reactor body is a cylinder, the bottom of the reactor body is provided with a water impeller, and the areas are separated by grids; the capacitive electroactive biofilm carrier is a sphere formed by stacking round sheets and is made of polyethylene plated with an ITO (Indium Tin Oxide) film, and stainless steel spikes are arranged on the surface of the capacitive electroactive biofilm carrier; the cathode plate is made of graphite and is cylindrical; the anode plate is made of stainless steel compounded by lauryl sodium sulfate and graphene-multi-walled carbon nanotubes and is cylindrical, the plate wall is hollow, and the anode and the cathode are connected through a circuit. Electron transfer is completed through flowing and collision of the capacitive electroactive biofilm carrier, the mass transfer efficiency and activity of the electroactive biofilm are enhanced, the high-carbon wastewater treatment capacity is improved, and meanwhile the device has the advantages of being high in impact load resistance and low in site area requirement.

The invention discloses a single-layer liquid crystal reflection type liquid crystal color display module and a preparation method thereof. The display module comprises a light absorption layer, a lower substrate, a red-green-blue three-primary-color reflection type cholesteric liquid crystal layer and an upper substrate which are sequentially arranged. The lower substrate is provided with a TFT electrode, the upper substrate is provided with a conductive indium tin oxide layer, the face, containing the TFT electrode, of the lower substrate is arranged upwards, the red-green-blue three-primary-color reflective cholesteric liquid crystal layer comprises a plurality of polyimide separating walls, and a micron-sized thin-wall container is formed between every two adjacent polyimide separating walls. And three adjacent micron-sized thin-wall containers form a group of pixel strips. Through formula improvement and process upgrading, the reflectivity of the display module is remarkably enhanced, color reflection is brighter, the visual angle characteristic of a display device is improved, the sensitivity to the observation angle is reduced, the display brightness and the light utilization rate are improved, and systematic optimization of reflection efficiency is achieved.

The transparent conducting film comprises a base material layer, a first resin layer, a base layer and a composite conducting layer which are sequentially arranged in a stacked mode, and the composite conducting layer comprises a first ITO conducting layer and a second ITO conducting layer arranged on the face, away from the base layer, of the first ITO conducting layer. The mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the first ITO conducting layer is 90: 10, and the mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the second ITO conducting layer is 93: 7; the first ITO conducting layer and the second ITO conducting layer are both prepared through a magnetron sputtering process, the bombardment gas during magnetron sputtering is krypton, and the direct-current sputtering voltage is 350-400 v. The transparent conductive film provided by the invention has good conductivity and light transmission, and is low in cost.

A multiplexed display panel and device and a driving method for the multiplexed display panel are provided. At the moment when a switching switch is turned on, a potential of a fanout line corresponding to a data line connected to sub-pixels, into which an data signal is input, is adjusted to the same level as a potential of the data line as much as possible, and a potential difference between each fanout line and the corresponding data line is relatively small at the moment when the switching switch is turned on, so that an instantaneous current at this moment is greatly reduced without causing relatively large jump of the potential of the data line, a common electrode and back-plated indium tin oxide (ITO) greatly fluctuate, and then the surface noise generated by the display panel is turned on is greatly reduced.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The embodiment of the invention discloses a bipolar electrochemical luminescence micro-fluidic chip and application thereof. The bipolar electrochemical luminescence micro-fluidic chip comprises an ITO (Indium Tin Oxide) electrode 1, a PDMS (Polydimethylsiloxane) chip main body and an ITO electrode 2 from top to bottom. According to the invention, horseradish peroxidase (HRP) is used as a signal label to be coupled with a labeled antibody (Ab2), magnetic beads are coupled with a coated antibody (Ab1), during detection, a coupled reagent and a sample to be detected are injected into the chip through an injection pump at the same time, the antibody and a detection substance AFP are mixed in the chip through a spiral microchannel to form an immune sandwich compound, and the immune sandwich compound is used for detecting the AFP in the chip. The electrochemical luminescence sensor is used for detecting the AFP, then is captured on the surface of the ITO electrode in the detection cavity under the action of the electromagnet, and finally outputs an electrochemical luminescence signal through electrical stimulation to realize detection, so that the AFP can be rapidly and simply detected at low cost, and the electrochemical luminescence sensor can be widely applied to the screening and diagnosis process of HCC.

The utility model discloses a heterojunction cell and a photovoltaic module, and relates to the technical field of photovoltaics. The heterojunction cell comprises a first transparent conductive layer, an n-type microcrystalline silicon layer, a first intrinsic amorphous silicon layer, an n-type monocrystalline silicon layer, a second intrinsic amorphous silicon layer, a p-type microcrystalline silicon layer and a second transparent conductive layer which are stacked in sequence. The heterojunction cell also includes a first electrode connected to the first transparent conductive layer and a second electrode connected to the second transparent conductive layer. Wherein the first transparent conductive layer comprises a first zinc oxide layer, a first indium tin oxide layer and a first titanium oxide layer which are stacked in sequence. The transparent conductive layer is arranged to be a composite layer structure made of three materials, so that the use amount of expensive indium tin oxide can be remarkably reduced, and the cost is reduced. The first conductive film with the composite layer structure can also relieve the problem of ultraviolet-induced degradation of the heterojunction cell, improve the performance stability of the cell and prolong the service life of the cell.

The invention belongs to the technical field of electrochromic devices, and relates to a flexible electrochromic device for heat management of a curved transparent enclosure structure. The electrode is formed by assembling flexible polyethylene glycol terephthalate-indium tin oxide as transparent conductive electrodes on the two sides to clamp a silver-based gel electrolyte. The device is simple in preparation method, controllable in composition and structure and easy to expand; the deposition quality of silver ions is improved through electrode surface plasma cleaning and modification; by applying and removing voltage, the device has reversible dual working modes: an initial state is a solar heating mode, and at the moment, the device has high sunlight transmissivity; voltage is applied to the device to excite deposition of silver on the outer side electrode, at the moment, a radiation cooling mode is adopted, and at the moment, the device has high sunlight reflectivity and high and medium far infrared emissivity; the device has excellent sunlight modulation capability and mechanical stability, and has great application prospects in the aspect of all-season dynamic thermal management of curved transparent enclosure structures such as buildings and automobiles.

The invention provides a titanium-based ceramic target material and a preparation method and application thereof.The titanium-based ceramic target material is prepared from, by mass, 96.4 wt%-98.3 wt% of titanium oxide and 1.7 wt%-3.6 wt% of doped oxide, and the doped oxide is prepared from, by mass, 0.8 wt%-1.5 wt% of niobium oxide, 0.5 wt%-1.0 wt% of tantalum oxide, 0.3 wt%-0.8 wt% of tungsten oxide and 0.1 wt%-0.3 wt% of aluminum oxide. According to the method, the high-performance titanium-based ceramic target material is prepared by adopting a normal-pressure sintering method through multi-element synergistic doping and dynamic regulation and control of the sintering atmosphere, the titanium-based thin film prepared by sputtering the titanium-based ceramic target material can form a laminated thin film structure with an indium tin oxide (ITO) thin film, and high conductivity, high visible light transmittance and high electron mobility are achieved; and the actual requirements in the field of silicon-based and perovskite solar cells are met.

The invention discloses a preparation method and application of a micron-sized quantum dot light-emitting diode array device, and the method comprises the steps: sequentially forming a hole injection layer, a hole transmission layer, a patterned insulating layer, a quantum dot light-emitting layer, an electron transmission layer and a top electrode on an indium tin oxide substrate, and preparing the patterned insulating layer through photoresist; quantum dots are spin-coated to form a process route of an array light-emitting layer, electron leakage generated at pixel gaps is inhibited through photoresist, high resolution is achieved, and meanwhile the performance of a recorded Micro-QLED array device is achieved; a novel cross-linked hole transport layer PF8Cz-X is adopted to verify and solve the problem that a photoacid generator component in the photoresist generates strong oxidizing photoacid, and a triphenylamine structure hole transport layer in the QLED device is damaged by a reaction in a free radical coordination binding mode; and physical dissolution of a developing solution in a micro-nano processing technology is avoided by designing a thermal crosslinking group, and a photoetching system which is compatible with a solution processing technology and lossless to the Micro-QLED array device is constructed.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) manufacturing process etching processes, in particular to a silver etching solution for an OLED manufacturing process as well as a preparation method and application of the silver etching solution. The silver etching liquid comprises nitric acid, phosphoric acid, a buffer agent, a metal ion chelating agent and an ionic liquid inhibitor, the ionic liquid inhibitor comprises 1-butyl-3-methylimidazole phosphate, the metal ion chelating agent is selected from at least one of pyromellitic acid, diethylenetriamine pentaacetic acid and ethylenediamine tetramethylene phosphoric acid, and the buffer agent is selected from at least one of sodium chloride, sodium chloride and sodium chloride. The buffering agent comprises acetic acid, and all the components are prepared according to a specific mass ratio. The etching solution can balance the etching rate of silver and indium tin oxide, avoid silver residues and black spot defects, prolong the service life of the solution, reduce the use of a volatile buffer agent, adapt to the OLED fine manufacturing process, improve the product yield and reduce the production cost, and is suitable for etching of a metal substrate in the OLED manufacturing process.

The invention provides high-temperature-resistant indium tin oxide (ITO) conductive glass and a preparation method thereof, and relates to the field of transparent conductive materials.The preparation method of the ITO conductive glass comprises the steps that firstly, a glass substrate is cleaned, and the clean glass substrate is placed on a magnetron sputtering preparation table; meanwhile, an ITO ceramic target material, a SnO2 ceramic target material and a Si3N4 ceramic target material are installed on different fixed targets of magnetron sputtering equipment respectively, then a bottom layer SnO2 thin film, an ITO thin film, a middle SnO2 thin film, a Si3N4 thin film and a top layer SnO2 thin film are sequentially deposited on the glass substrate through the magnetron sputtering technology, and a SnO2 / ITO / SnO2 / Si3N4 / SnO2 composite thin film structure is formed on the surface of the glass substrate; the conductive glass prepared by the method disclosed by the invention can still keep stable electrical properties and relatively high light transmittance in a high-temperature environment, meets the strict requirements on materials in the fields of semiconductor device manufacturing, solar cells and the like, and promotes the development of related industries.

The invention discloses an anti-reflection temperature-control photovoltaic panel coating and a preparation method thereof. The anti-reflection temperature-control photovoltaic panel coating is prepared from the following components: 146 to 156 parts of segmented copolymer, 230 to 245 parts of double-layer shell hollow nano particles and 15 to 17 parts of aminopropyl trimethoxy silane, the block copolymer is a triblock copolymer of 48-52 parts of thiolactone acrylamide, 90-94 parts of perfluorooctyl ethyl acrylate and 8-10 parts of methyl methacrylate, the inner layer of the double-layer shell hollow nanoparticle is indium tin oxide, and the outer layer of the double-layer shell hollow nanoparticle is silicon dioxide. The coating provided by the invention can improve the light transmittance, also significantly enhances the heat dissipation performance of the photovoltaic panel, and significantly improves the power generation efficiency of the photovoltaic panel.

The invention discloses a preparation method of a transparent conductive oxide ITO (Indium Tin Oxide) film, which comprises the following steps of: A1, selecting a silicon wafer, and depositing ITO transparent conductive layers on microcrystalline silicon layers on two surfaces of the silicon wafer; a2, after the ITO transparent conductive layer in the step A1 is prepared, the silicon wafer is placed in a microwave environment to be subjected to microwave treatment under the conditions that the frequency ranges from 1 GHz to 3 GHz, the power ranges from 500 W to 1200 W, the treatment time ranges from 30 seconds to 100 seconds, and then the transparent conductive oxide ITO thin film is prepared. The invention further discloses application of the transparent conductive oxide ITO thin film, and the application comprises the step of applying the transparent conductive oxide ITO thin film to preparation of a heterojunction solar cell so as to improve the electrical performance and the optical performance of the heterojunction solar cell. The transparent conductive oxide ITO thin film has high light transmittance and low sheet resistance, is applied to the heterojunction solar cell, and improves the photoelectric conversion efficiency and stability of the cell.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

To provide an electrophotographic apparatus and a process cartridge each suppressing the occurrence of image smearing in an output image under a high-temperature and high-humidity environment, provided are the following electrophotographic apparatus and process cartridge. That is, provided are an electrophotographic apparatus including: an electrophotographic photosensitive member; a charging unit; an image exposing unit; a developing unit; and a transferring unit, wherein the electrophotographic photosensitive member includes a surface layer containing indium tin oxide particles and a (meth)acrylic resin, and wherein the toner contains strontium titanate particles as an external additive, and a process cartridge.

The invention relates to a dual-band silver-based electrochromic device for dynamically regulating and controlling sun and mid-infrared radiation and application thereof.The device comprises two transparent conductive electrodes, silver-based gel electrolyte and a transparent packaging material, the two transparent conductive electrodes serve as a working electrode and a counter electrode respectively, the transparent conductive electrodes are indium tin oxide-quartz glass electrodes, and the silver-based gel electrolyte is arranged between the two transparent conductive electrodes. The working electrode is made of single-sided indium tin oxide-quartz glass, the counter electrode is made of double-sided indium tin oxide-quartz glass, the working electrode and the counter electrode are arranged in parallel and in a staggered manner and are bonded and fixed through a transparent packaging material, and then a silver-based gel electrolyte is injected between the two transparent conductive electrodes, so that the silver-based gel electrolyte is formed. And an electrode-electrolyte-electrode three-layer structure is formed. Compared with the prior art, the device has excellent sunlight and mid-infrared dual-band radiation modulation capability, is controllable in composition and structure and easy to expand, and has great application prospects in the aspect of all-season dynamic thermal management of transparent enclosure structures such as buildings and automobiles.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.