240 results about "Indium tin oxide" patented technology

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) manufacturing process etching processes, in particular to a silver etching solution for an OLED manufacturing process as well as a preparation method and application of the silver etching solution. The silver etching liquid comprises nitric acid, phosphoric acid, a buffer agent, a metal ion chelating agent and an ionic liquid inhibitor, the ionic liquid inhibitor comprises 1-butyl-3-methylimidazole phosphate, the metal ion chelating agent is selected from at least one of pyromellitic acid, diethylenetriamine pentaacetic acid and ethylenediamine tetramethylene phosphoric acid, and the buffer agent is selected from at least one of sodium chloride, sodium chloride and sodium chloride. The buffering agent comprises acetic acid, and all the components are prepared according to a specific mass ratio. The etching solution can balance the etching rate of silver and indium tin oxide, avoid silver residues and black spot defects, prolong the service life of the solution, reduce the use of a volatile buffer agent, adapt to the OLED fine manufacturing process, improve the product yield and reduce the production cost, and is suitable for etching of a metal substrate in the OLED manufacturing process.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

The invention relates to the technical field of PVB heat-insulating films, in particular to a PVB heat-insulating film based on indium tin oxide and bronze cesium tungsten compounding and a preparation method thereof.The PVB heat-insulating film is prepared from, by weight, 80-120 parts of PVB resin, 20-50 parts of oily plasticizer, 0.1-2.0 parts of silane coupling agent, 0.1-1.0 part of antioxidant, 0.1-1.0 part of ultraviolet light absorber, 1-5 parts of polyethylene glycol derivative and 1-5 parts of compound dispersion slurry, the weight ratio of the indium tin oxide powder to the bronze cesium tungsten powder in the compound dispersed slurry is (5: 5)-(7: 3). According to the PVB heat-insulating film based on indium tin oxide and cesium tungsten bronze compounding and the preparation method, the prepared PVB heat-insulating film has high visible light transmittance and excellent near-infrared light rejection rate, meanwhile, the Faraday cage effect can be effectively avoided, and the signal shielding problem is avoided.

The invention relates to the technical field of optical functional film manufacturing, in particular to a multi-layer structure of a high-light-transmittance composite brightness enhancement film and a processing method of the multi-layer structure, and the multi-layer structure sequentially comprises a surface hardening layer, a high-refractive-index composite layer, a light diffusion layer, a conductive functional layer, a microstructure layer and a bonding layer from a light incident side to a light emergent side; the surface hardening layer is composed of fluorine-containing modified polyethylene glycol terephthalate (PET), the high-refractive-index composite layer comprises a composite layer of rutile type nano titanium oxide particles and methyl phenyl silicone resin, and the light diffusion layer is a cross-linked layer formed by mixing bisphenol A type epoxy acrylate and trimethylolpropane triacrylate according to the mass ratio of 4.2: 1. The conductive functional layer is an indium tin oxide (ITO) thin film, the microstructure layer is a prism array layer formed by nickel template imprinting, the optical performance of the film is remarkably improved, and the light transmittance of the wavelength of 550 nm reaches 93.5%-93.8% through the optical matching design of the composite structure and is improved by 3-5% compared with similar products.

The invention belongs to the technical field of textile materials, and relates to an environment-adaptive multi-spectrum camouflage cloak and a preparation method thereof. Comprising a cloak body, the cloak body is made of composite fabric, the composite fabric sequentially comprises a wear-resistant layer, a waterproof layer and a close-fitting layer from outside to inside, and the surface of the wear-resistant layer is sequentially coated with a thermochromic dye layer, a far infrared plating layer and a visible light hiding layer from bottom to top; the thermochromic dye layer is formed by compounding disperse dye and bistable thermochromic microcapsules, and the visible light stealth layer is prepared from photonic crystal gel; and the far infrared plating layer is prepared from an indium tin oxide film. The desert camouflage is switched below 5 DEG C, the woodland camouflage is switched above 60 DEG C, and different regional environments are matched; according to efficient multi-spectrum camouflage, the color difference between the visible light band and the background is smaller than or equal to 1.95, three emissivity levels are formed in the infrared band, and the thermal imaging detection probability is reduced.

The present application relates to the technical field of target material, in particular to a preparation method of high-density tin-zinc-zirconium oxide target material. The preparation method comprises the following steps: preparing tin oxide powder, zirconium oxide powder and zinc oxide powder into a mixed slurry, and then performing sand milling, granulation, molding, sintering to obtain the high-density tin-zinc-zirconium oxide target material, wherein the mass ratio of the tin oxide powder, the zirconium oxide powder and the zinc oxide powder is 100:0.1-0.5:9-11. The high-density tin-zinc-zirconium oxide target material prepared by the preparation method has high relative density and low resistivity, and the sputtered film thereof has high transmittance in the visible light range, can replace the traditional indium tin oxide target material, and can be widely applied in the fields of semiconductor integrated circuits, LEDs, displays, touch screens, solar photovoltaics and chemical industry.

The invention provides an indium tin oxide mechanical property simulation method and device and electronic equipment, and relates to the technical field of indium tin oxide simulation, and the indium tin oxide mechanical property simulation method comprises the following steps: carrying out proton irradiation simulation on an indium tin oxide material virtual model according to obtained proton environment parameters to obtain primary recoil atomic characteristic data; carrying out atom collision simulation according to the primary recoil atom characteristic data and the obtained cell expansion model of the indium tin oxide to obtain defect atom concentration; constructing a defect indium tin oxide model according to the defect atom concentration; and performing a tensile test on the defective indium tin oxide model to obtain defect stress-strain data. According to the method, the accuracy of mechanical property simulation of the indium tin oxide can be improved.

The application belongs to the technical field of lead-free tin paste, and particularly relates to high-performance lead-free tin paste, a preparation method and application thereof; the high-performance lead-free tin paste comprises lead-free alloy powder, carbon nanotube composite and fluxing agent in a mass ratio of 12-15:0.5-1:84.5-87; the carbon nanotube composite comprises carbon nanotubes, carbon nanohorns, nano indium tin oxide, quaternary ammonium salt surfactant and liquid rosin; the fluxing agent comprises, in terms of mass percentage, hydrogenated rosin 30-40%, activating agent 5-10%, thixotropic agent 4-8%, stabilizer 1-5% and solvent to make up the balance to 100%; the high-performance lead-free tin paste provided by the application has low welding point cavity rate, high shear strength and good temperature cycle impact resistance.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

The invention belongs to the technical field of zinc ion batteries, and particularly relates to a zinc metal negative electrode and a zinc ion battery. The zinc metal negative electrode comprises a zinc metal substrate and a coating covering the surface of the zinc metal substrate, the coating comprises a conductive metal oxide; the coating is formed on the zinc metal substrate in a manner independent of an organic polymer binder. According to the scheme, the use of an insulating organic polymer adhesive is avoided, so that the conductivity of the coating is improved, and the structural controllability of the coating is improved. The high-conductivity indium tin oxide (ITO) nanorod is prepared through cooperation of microwave solvothermal synthesis and high-temperature calcination, and a protective layer which is free of a binder and controllable in structure is constructed on the surface of the zinc foil through the electrophoretic deposition technology.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The application discloses a water-soluble polymer-based proton-type memristor and a preparation method thereof. The memristor has a sandwich structure and is sequentially composed of a top electrode, an inorganic resistive switching functional layer, an organic resistive switching functional layer and a bottom electrode. The top electrode is a metal active electrode, the bottom electrode is indium tin oxide (ITO), the inorganic resistive switching functional layer is a metal oxide film, and the organic resistive switching functional layer is a doping system composed of a water-soluble polymer and a doping material. The preparation process of the proton-type memristor is reliable and stable. The obtained memristor has the characteristics of high biocompatibility and green environmental protection. The device performance consistency and environmental dependence are improved, and the simulation of bionic synaptic plasticity is greatly improved. The device can be controlled by using a low voltage, has low power consumption, and has a good bidirectional current modulation effect, so that the device provides a possibility for further enriching synaptic functions and designing flexible wearable devices.

The invention discloses transparent conducting layer glass, a preparation method thereof, a perovskite solar cell and application. The transparent conducting layer glass comprises a glass substrate, a GZO layer and an ITZO layer, wherein the GZO layer and the ITZO layer are sequentially deposited on the glass substrate; wherein the GZO layer comprises a zinc oxide layer doped with at least one of aluminum, gallium, boron or indium; the ITZO layer is an indium tin zinc oxide layer; and the number of the ITZO layers is greater than or equal to 1. The transparent conducting layer glass has both high light transmittance and high conductivity. The GZO layer and the ITZO layer are combined, the GZO layer and the ITZO layer are combined, the GZO layer and the ITZO layer are combined, interface energy level matching with a hole transport layer is effectively optimized, interface carrier recombination is reduced, and open-circuit voltage (Voc) and short-circuit current density (Jsc) of the perovskite solar cell are greatly improved. Therefore, the efficiency of the perovskite solar cell is improved.

Method and apparatus for generating pulses in a light detection and ranging (LiDAR) system. In some embodiments, a resonance chamber is provided to recirculate electromagnetic radiation from a light source between a base mirror and an active laminated structure characterized as a Bragg grating structure and having interleaved passive and active layers. A Q-switch control circuit applies a voltage profile to the active layers to transition the active laminated structure between a charging state in which the electromagnetic radiation recirculates within the resonance chamber and a release state in which the electromagnetic radiation is transmitted through the active laminated structure as an emitted light pulse. The passive layers may be formed of a dielectric material. The active layers may be formed of a metal material such but not limited to Indium Tin Oxide (ITO), Lithium Niobate (LiNbO3), Barium Titanate (BaTiO3), doped Silicon (Si), or doped Germanium (Ge).

The embodiment of the invention relates to an electrochromic device and a preparation method and application thereof, and the electrochromic device comprises a heat sealing film frame body, first indium tin oxide (ITO) conductive glass, an electron blocking layer, second indium tin oxide (ITO) conductive glass and an electrochromic layer; a solution injection hole is reserved in the heat sealing film frame body; the first indium tin oxide (ITO) conductive glass is positioned on one side of the heat-sealing film frame body; the electron blocking layer and the second indium tin oxide I-TO conductive glass are located on the other side of the heat sealing film frame, and the electron blocking layer and the first indium tin oxide I-TO conductive glass are oppositely arranged, so that a containing cavity is formed between the electron blocking layer and the first indium tin oxide I-TO conductive glass; the component of the electrochromic layer is a tungsten oxide quantum dot solution of metal perchlorate, and the solution is injected into the containing cavity through the solution injection hole.

A transparent glazing article, comprising at least one glass substrate equipped, on at least one of its faces, with a coating consisting of a stack of thin layers, the coating comprising the following sequence of layers, with reference to the surface of the substrate: - a first layer comprising niobium nitride, - a layer comprising a transparent conductive oxide, - a second layer comprising niobium nitride, wherein the first and second layers comprising niobium nitride are in direct contact with the layer comprising a transparent conductive oxide.

The application discloses a PC / ABS alloy and a preparation method and application thereof, and belongs to the technical field of high polymer engineering plastics; the PC / ABS alloy provided by the application comprises the following components in parts by mass: 63-78 parts of PC, 8-22 parts of ABS, 5-13 parts of titanium white, 1-6 parts of bisphenol A-bis(diphenyl phosphate), 0.5-5.5 parts of indium tin oxide, 0.1-1.2 parts of carbon black and 0-8 parts of an auxiliary agent; the average particle size of the titanium white is 140-310 nm; and the average particle size of the carbon black is less than or equal to 22 nm. The product prepared by the application has excellent light-shielding high-reflecting white effect and good appearance, and excellent laser welding performance; thereby, the product can be widely applied to the preparation of paint-sprayed parts of automobile interiors and exteriors. Moreover, the preparation method of the PC / ABS alloy is simple in operation and is beneficial to actual production.

The utility model relates to the technical field of photovoltaic cells, in particular to a flexible perovskite photovoltaic cell which comprises a cell, the cell is composed of a transparent light-emitting layer, a conductive layer, an absorption layer, a back reflection layer, a flexible substrate layer and an elastic sheet, the transparent light-emitting layer is arranged at the top of the cell, the conductive layer is arranged at the bottom of the transparent light-emitting layer, and the absorption layer is arranged on the back reflection layer. The absorption layer is arranged at the bottom of the conductive layer, the flexible substrate layer is arranged at the bottom of the battery, the elastic sheet is arranged on the surface of the battery, the transparent light-emitting layer is a thin film formed by indium tin oxide and silver-based nano patterns, the indium tin oxide and the silver-based nano patterns are woven in a staggered mode, the conductive layer is composed of zinc oxide and a conductive polymer, and the transparent light-emitting layer is a transparent light-emitting layer. Compared with a conventional flexible perovskite photovoltaic cell, the flexible perovskite photovoltaic cell provided by the utility model has the advantages that through the design of the flexible substrate layer, the flexibility of the photovoltaic cell can be rapidly and greatly improved, and the overall practicability is greatly improved.

The invention relates to the technical field of semiconductor display, and discloses a Micro-LED micro display chip and a manufacturing process thereof. A bonding metal layer is arranged at the top of the lower substrate; a metal reflector is arranged at the top of the bonding metal layer; a distributed Bragg reflector is arranged at the top of the metal reflector; a first indium tin oxide layer is laid on the top of the distributed Bragg reflector; an LED epitaxial assembly is arranged at the top of the first indium tin oxide layer; and a second indium tin oxide layer is laid on the other side of the LED epitaxial assembly. The middle parts of the metal reflector, the distributed Bragg reflector, the first indium tin oxide layer and the LED epitaxial assembly are respectively provided with an optical resonance region and an MESA region. By arranging the composite reflection structure and the LED epitaxial assembly to form an optical resonant cavity, light emission in the vertical direction is enhanced, and the light output power of the chip is remarkably improved; meanwhile, the passivation layer on the side wall effectively inhibits the surface leakage current.

This invention discloses a method and system for detecting the strongest Rayleigh acoustic current in immobilized microdroplets. Specifically, it involves: calculating the acoustic current suppression coefficient through experimental quantitative testing to establish a quantitative mapping relationship between acoustic current intensity and droplet contact angle; utilizing an electrowetting structure composed of interdigitated electrodes, a dielectric layer, and a hydrophobic layer to actively regulate the droplet contact angle through an applied voltage; and dynamically adjusting the applied voltage in real time by monitoring the droplet vibration amplitude, particle velocity, and contact angle through a collaborative control program to maintain the acoustic current intensity at its strongest. This invention also provides a detection system for implementing the above method, including an indium tin oxide transparent interdigitated electrode substrate, a lead zirconate titanate piezoelectric transducer, a laser Doppler vibrometer, a microscope, and a collaborative control module. This invention can maximize and dynamically maintain the Rayleigh acoustic current intensity in immobilized microdroplets, significantly accelerating the solid-liquid interface mass transfer process, and is applicable to biochemical analysis fields such as rapid immunoassay and biological particle mixing.

This invention provides an antistatic pipe and its preparation method, comprising an inner layer, a middle layer, and an outer layer arranged sequentially from the inside out. The middle layer is a porous thin-walled steel pipe, and both the inner and outer layers are made of composite materials. By weight, the composite material comprises the following raw materials: 55-65 parts heat-resistant polyethylene, 6-10 parts high-density polyethylene, 5-15 parts ethylene-ethyl acrylate copolymer, 6-10 parts sulfonated polyolefin, 2-6 parts titanate-modified vermiculite powder, 3-7 parts phosphorus-nitrogen composite flame retardant, 2-4 parts nano-indium tin oxide, 1-1.5 parts zinc stearate, 0.5-0.7 parts antioxidant, and 1.5-2.5 parts maleic anhydride-grafted polyethylene. The synergistic effect of the multiple components in this invention enables the prepared antistatic pipe to achieve breakthroughs in antistatic, mechanical, and flame-retardant properties, making it suitable for high-risk environments.

The invention relates to the technical field of multi-layer solar film preparation, in particular to a nano titanium nitride solar film and a preparation method thereof.The nano titanium nitride solar film comprises a release film layer, an adhesive layer, a substrate layer, a functional core layer, an ultraviolet-proof layer and a wear-resistant explosion-proof layer which are sequentially compounded from bottom to top; the release film layer is a polyethylene glycol terephthalate release film with the thickness of 25-30 [mu] m, and the surface of the release film layer is coated with an organic silicon release agent with the thickness of 3-5 [mu] m. According to the nano titanium nitride solar film, a nano titanium nitride and indium tin oxide composite system is adopted, a double-target synchronous sputtering process is combined, high infrared reflection efficiency is guaranteed, nano titanium nitride dispersion liquid and an anti-aging compound are further introduced, aging of an adhesive layer is remarkably delayed, degumming and color fading are avoided, meanwhile, the rheological property and bonding strength are optimized, and the service life of the solar film is prolonged. The coating is suitable for large-area spraying to be attached to curved glass, the construction hollowing rate is lower than 0.3%, the edge warping risk is remarkably reduced, and dependence on manual operation is reduced.

The application discloses a nerve synapse biomimetic photoelectric slowly-varying memristor and a preparation method thereof, and belongs to the field of organic electronics and photoelectric information technology. The device structure of the slowly-varying memristor is a cross structure, and comprises a bottom electrode, a functional layer and a top electrode from bottom to top on a conductive glass. The functional layer is a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] MEH-PPV layer. The bottom electrode is indium tin oxide ITO, and the top electrode is Ag. The MEH-PPV layer is a continuous and smooth amorphous thin film. The MEH-PPV layer is prepared by a solution spin coating method, and has the advantages of good sustainability, good solubility, simple preparation, excellent photoelectric performance and the like. The prepared nerve synapse biomimetic photoelectric slowly-varying memristor can perform various nerve morphological simulation and has different responses to light with different wavelengths and different intensities. The application has low cost, good repeatability and can be used in an artificial nerve morphological computing system, and provides more possibilities for constructing a visual perception system.

The invention relates to the technical field of liquid crystal display devices, and particularly discloses a nanofiber-stabilized double-color liquid crystal coating display device which comprises five layers of structures sequentially arranged, the first layer of structure is a polyethylene glycol terephthalate film with the single side loaded with indium tin oxide; the second layer structure is a first color liquid crystal coating, the first color liquid crystal coating comprises an electrostatic spinning network A and a mixed coating A coating one side of the electrostatic spinning network A, and the mixed coating A is located between the electrostatic spinning network A and the polyethylene glycol terephthalate film; the third layer structure is an ultrathin film; the fourth layer structure is a second color liquid crystal coating, the second color liquid crystal coating comprises an electrostatic spinning network B and a mixed coating B coating one side of the electrostatic spinning network B, and the mixed coating B is located between the electrostatic spinning network B and the ultrathin film; and the fifth layer structure is a glass substrate applying a TFT technology. The display device has the advantages of being low in cost, suitable for large-scale mass production and high in color gamut.

The invention provides a thermodynamic simulation method and device for a composite structure and electronic equipment, and relates to the technical field of composite structure simulation, and the thermodynamic simulation method for the composite structure comprises the following steps: carrying out proton irradiation simulation on a mesoscale model according to a preset proton irradiation condition, primary recoil atomic data of indium tin oxide and primary recoil atomic data of polyimide are obtained; performing cascade collision simulation according to the indium tin oxide primary recoil atomic data and the polyimide primary recoil atomic data to obtain an indium tin oxide material defect rate and a polyimide material defect rate; combining and modeling defect models respectively constructed according to the indium tin oxide material defect rate and the polyimide material defect rate to obtain a composite structure defect model; and performing energy transmission simulation on the composite structure defect model to obtain a temperature gradient curve. The accuracy of thermodynamic simulation of the composite structure can be improved.

The invention discloses a high-sensitivity biosensor for enhancing photoelectric response based on multi-exciton effect, which is of a layered stacking structure along the vertical direction and sequentially comprises an ITO (indium tin oxide) conductive glass substrate, an HQ-CdS hierarchical quantum structure homojunction photoelectrode and a 5-HT aptamer modification layer from bottom to top, wherein the HQ-CdS photoelectrode is composed of a B-CdS film and an in-situ grown C-modified CdS two-dimensional nanosheet and forms a homojunction structure, the preparation method of the sensor comprises the steps of preparing the B-CdS photoelectrode through chemical bath deposition and annealing treatment, constructing the HQ-CdS photoelectrode through in-situ photoelectrochemical treatment, and then completing sensor assembly through aptamer fixation and target molecule combination. According to the invention, the multi-exciton effect is used as a core signal amplification strategy, and the problem of insufficient resolution of the existing PEC aptamer sensor is solved.