372 results about "Indium tin oxide" patented technology

The invention relates to the technical field of flexible pressure sensors, in particular to a preparation method and application of a capacitance flexible pressure sensor with an adjustable gradient random micro-cone structure, and the sensor comprises an upper electrode and a lower electrode which are transparent indium tin oxide conductive films (PET / ITO); the packaging layer is a polyimide (PI) adhesive tape and covers the outer side of the electrode; the flexible isolation layer is polydimethylsiloxane (PDMS) with a hollow structure, and is positioned between the upper electrode and the lower electrode; the dielectric layer of a gradient random micro-cone structure is located in the flexible isolation layer and is formed by compounding polyvinyl alcohol (PVA) and phosphoric acid (H3PO4) according to the mass ratio of 1: 1; the gradient micro-cone structure and the ionization effect are combined, the electric double layer effect grading phenomenon occurs, and the gradient micro-cone sensor has the advantages of being high in sensitivity, wide in detection range, capable of keeping linearity under large pressure, short in response time and good in cycling stability.

The invention relates to the technical field of electronic devices, in particular to a synaptic memristive device with a vertical structure and a preparation method and application of the synaptic memristive device. The invention provides a synaptic memristor with a vertical structure. The synaptic memristor structurally comprises a substrate, a bottom electrode, an active layer, an electrolyte layer and a top electrode which are stacked in sequence. Wherein the active layer is a vanadium pentoxide film which is excellent in electrical property and optical response, and the sensitivity and plasticity of the device can be improved; the electrolyte layer adopts polyethylene oxide ionic glue, so that the resistance change characteristic of the active layer can be adjusted, the reaction between the active layer and the top electrode can be prevented, and the service life of the device is prolonged; the bottom electrode is an indium tin oxide thin film, has good compatibility with an active layer interface, can promote oxygen vacancy migration, and optimizes the resistance switching performance. Through mutual coordination of the materials, the device can generate microampere-level current under millivolt-level stimulation, shows high-sensitivity synaptic plasticity, and is suitable for a high-performance neuromorphic computing system.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention discloses a single-layer liquid crystal reflection type liquid crystal color display module and a preparation method thereof. The display module comprises a light absorption layer, a lower substrate, a red-green-blue three-primary-color reflection type cholesteric liquid crystal layer and an upper substrate which are sequentially arranged. The lower substrate is provided with a TFT electrode, the upper substrate is provided with a conductive indium tin oxide layer, the face, containing the TFT electrode, of the lower substrate is arranged upwards, the red-green-blue three-primary-color reflective cholesteric liquid crystal layer comprises a plurality of polyimide separating walls, and a micron-sized thin-wall container is formed between every two adjacent polyimide separating walls. And three adjacent micron-sized thin-wall containers form a group of pixel strips. Through formula improvement and process upgrading, the reflectivity of the display module is remarkably enhanced, color reflection is brighter, the visual angle characteristic of a display device is improved, the sensitivity to the observation angle is reduced, the display brightness and the light utilization rate are improved, and systematic optimization of reflection efficiency is achieved.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) manufacturing process etching processes, in particular to a silver etching solution for an OLED manufacturing process as well as a preparation method and application of the silver etching solution. The silver etching liquid comprises nitric acid, phosphoric acid, a buffer agent, a metal ion chelating agent and an ionic liquid inhibitor, the ionic liquid inhibitor comprises 1-butyl-3-methylimidazole phosphate, the metal ion chelating agent is selected from at least one of pyromellitic acid, diethylenetriamine pentaacetic acid and ethylenediamine tetramethylene phosphoric acid, and the buffer agent is selected from at least one of sodium chloride, sodium chloride and sodium chloride. The buffering agent comprises acetic acid, and all the components are prepared according to a specific mass ratio. The etching solution can balance the etching rate of silver and indium tin oxide, avoid silver residues and black spot defects, prolong the service life of the solution, reduce the use of a volatile buffer agent, adapt to the OLED fine manufacturing process, improve the product yield and reduce the production cost, and is suitable for etching of a metal substrate in the OLED manufacturing process.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

To provide an electrophotographic apparatus and a process cartridge each suppressing the occurrence of image smearing in an output image under a high-temperature and high-humidity environment, provided are the following electrophotographic apparatus and process cartridge. That is, provided are an electrophotographic apparatus including: an electrophotographic photosensitive member; a charging unit; an image exposing unit; a developing unit; and a transferring unit, wherein the electrophotographic photosensitive member includes a surface layer containing indium tin oxide particles and a (meth)acrylic resin, and wherein the toner contains strontium titanate particles as an external additive, and a process cartridge.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

The invention belongs to the technical field of optical glass. The invention relates to an electrochromic glass device, in particular to a preparation method of the electrochromic glass device. The preparation method comprises the following specific preparation steps: cleaning the surface of a glass substrate, and depositing an indium tin oxide transparent conductive layer on the surface of the glass substrate by adopting magnetron sputtering; the preparation method comprises the following steps: by taking nano spherical silicon dioxide as a template, dispersing the nano spherical silicon dioxide in an ethanol solution, then adding a sodium tungstate solution, then adjusting the pH value to 2-3, carrying out a stirring reaction, and then cleaning with a sodium hydroxide solution to remove the template so as to obtain a hollow spherical precursor dispersion liquid; coating the hollow spherical precursor dispersion liquid on the surface of the transparent conductive layer in a spin coating mode, drying and annealing; preparing a liquid electrolyte: taking propylene carbonate as a solvent, and taking lithium perchlorate as an electrolyte lithium salt; niO is deposited on the surface of the WO3 electrochromic layer to serve as a counter electrode through magnetron sputtering; epoxy resin is adopted to package the edge, after liquid electrolyte is injected, internal residual bubbles are removed through hot pressing, and the product is obtained.

The invention belongs to the technical field of solar cells, and discloses a preparation method of a high-efficiency and low-cost copper electroplating heterojunction solar cell. The preparation method of the efficient low-cost copper electroplating heterojunction solar cell comprises the steps of texturing and cleaning, amorphous silicon thin film deposition, transparent conductive thin film deposition, surface patterning, copper grid line electroplating and the like. According to the preparation method, the usage amount of the indium tin oxide thin film can be effectively reduced, the optical absorption of the TCO thin film is reduced by using the laminated structure, and the conversion efficiency and the corrosion resistance of the cell are improved.

The invention provides a wide-spectrum dual-photoelectrode-based photoelectrochemical sensor and a preparation method and application thereof, and belongs to the technical field of photoelectrochemical sensors. According to the photoelectrochemical sensor provided by the invention, a BCN / ITO electrode is used as a photoanode, a CuInS2 / ITO electrode is used as a photocathode, BCN is Bi2S3 / C3N4, and ITO is indium tin oxide. The sensor is used for detecting enrofloxacin and ciprofloxacin pollution. According to the present invention, the surface is modified with the aptamer having the specific recognition function, the specific binding effect of the aptamer with the enrofloxacin and the ciprofloxacin is utilized to form the complex of the aptamer and the target object, and the influence of the caused steric hindrance effect on the photoelectric signal and the dual-channel strategy are utilized to achieve the simultaneous detection of the residual marker; the linear ranges for detecting enrofloxacin and ciprofloxacin are 0.1 nM to 1 mu M and 50 pM to 0.5 mu M respectively, the detection limits are 24 pM and 15.5 pM respectively, and the method is successfully applied to simultaneous detection of residual markers in water. The method has the advantages of greenness, environmental protection, wide detection range, high sensitivity, good selectivity and high stability.

The invention relates to the technical field of PVB heat-insulating films, in particular to a PVB heat-insulating film based on indium tin oxide and bronze cesium tungsten compounding and a preparation method thereof.The PVB heat-insulating film is prepared from, by weight, 80-120 parts of PVB resin, 20-50 parts of oily plasticizer, 0.1-2.0 parts of silane coupling agent, 0.1-1.0 part of antioxidant, 0.1-1.0 part of ultraviolet light absorber, 1-5 parts of polyethylene glycol derivative and 1-5 parts of compound dispersion slurry, the weight ratio of the indium tin oxide powder to the bronze cesium tungsten powder in the compound dispersed slurry is (5: 5)-(7: 3). According to the PVB heat-insulating film based on indium tin oxide and cesium tungsten bronze compounding and the preparation method, the prepared PVB heat-insulating film has high visible light transmittance and excellent near-infrared light rejection rate, meanwhile, the Faraday cage effect can be effectively avoided, and the signal shielding problem is avoided.

The invention relates to the technical field of optical functional film manufacturing, in particular to a multi-layer structure of a high-light-transmittance composite brightness enhancement film and a processing method of the multi-layer structure, and the multi-layer structure sequentially comprises a surface hardening layer, a high-refractive-index composite layer, a light diffusion layer, a conductive functional layer, a microstructure layer and a bonding layer from a light incident side to a light emergent side; the surface hardening layer is composed of fluorine-containing modified polyethylene glycol terephthalate (PET), the high-refractive-index composite layer comprises a composite layer of rutile type nano titanium oxide particles and methyl phenyl silicone resin, and the light diffusion layer is a cross-linked layer formed by mixing bisphenol A type epoxy acrylate and trimethylolpropane triacrylate according to the mass ratio of 4.2: 1. The conductive functional layer is an indium tin oxide (ITO) thin film, the microstructure layer is a prism array layer formed by nickel template imprinting, the optical performance of the film is remarkably improved, and the light transmittance of the wavelength of 550 nm reaches 93.5%-93.8% through the optical matching design of the composite structure and is improved by 3-5% compared with similar products.

The invention belongs to the technical field of textile materials, and relates to an environment-adaptive multi-spectrum camouflage cloak and a preparation method thereof. Comprising a cloak body, the cloak body is made of composite fabric, the composite fabric sequentially comprises a wear-resistant layer, a waterproof layer and a close-fitting layer from outside to inside, and the surface of the wear-resistant layer is sequentially coated with a thermochromic dye layer, a far infrared plating layer and a visible light hiding layer from bottom to top; the thermochromic dye layer is formed by compounding disperse dye and bistable thermochromic microcapsules, and the visible light stealth layer is prepared from photonic crystal gel; and the far infrared plating layer is prepared from an indium tin oxide film. The desert camouflage is switched below 5 DEG C, the woodland camouflage is switched above 60 DEG C, and different regional environments are matched; according to efficient multi-spectrum camouflage, the color difference between the visible light band and the background is smaller than or equal to 1.95, three emissivity levels are formed in the infrared band, and the thermal imaging detection probability is reduced.

A low-absorption and high-emission thermal control coating resistant to high-dose ionizing radiation and its preparation method, which relates to the field of spacecraft thermal control coatings. The thermal control coating includes a bottom coating, a middle coating, and a top coating sequentially arranged on the surface of a substrate; the bottom coating includes barium sulfate, cerium oxide, and a binder; the middle coating includes hollow glass microspheres, a binder, and an inorganic dispersant; the top coating includes indium tin oxide and a binder. It greatly increases the scattering ability of different spectral energies of sunlight and the tolerance to vacuum ionizing radiation, enabling it to meet the design requirements of high precision and long life of modern new spacecraft.

The utility model relates to an LCM (liquid crystal module) touch color display screen, which comprises lower glass and upper glass, the lower glass is single-sided ITO (indium tin oxide) glass, the upper glass is double-sided ITO glass, a display circuit is arranged on a binding surface of the lower glass and the upper glass, and the display circuit comprises a group of control display patterns and a group of state display patterns. The upper end face of the upper glass sheet is provided with a group of touch frame-shaped lines, one side of the upper glass sheet is provided with a group of touch pins, each touch frame-shaped line corresponds to one touch pin, and a touch conduction wire is arranged between the touch frame-shaped lines and the touch pins; and each touch frame-shaped circuit covers one control display graph. The problem that an existing touch display screen is high in production cost can be solved.

The present application relates to the technical field of target material, in particular to a preparation method of high-density tin-zinc-zirconium oxide target material. The preparation method comprises the following steps: preparing tin oxide powder, zirconium oxide powder and zinc oxide powder into a mixed slurry, and then performing sand milling, granulation, molding, sintering to obtain the high-density tin-zinc-zirconium oxide target material, wherein the mass ratio of the tin oxide powder, the zirconium oxide powder and the zinc oxide powder is 100:0.1-0.5:9-11. The high-density tin-zinc-zirconium oxide target material prepared by the preparation method has high relative density and low resistivity, and the sputtered film thereof has high transmittance in the visible light range, can replace the traditional indium tin oxide target material, and can be widely applied in the fields of semiconductor integrated circuits, LEDs, displays, touch screens, solar photovoltaics and chemical industry.

The invention discloses a novel organic electrochromic material, and relates to the technical field of organic electrochromic materials, and the novel organic electrochromic material has excellent coloring efficiency and rich color changes. An electrochromic device based on the material adopts a multi-layer structural design, and specifically comprises a coating substrate, an ITO (Indium Tin Oxide) layer, an electrochromic layer PDINH, an ion conductive electrolyte layer AlPO4 and an ITO layer. The preparation method comprises the following steps: preparing the electrochromic layer PDINH on the coated substrate / ITO layer through a wet chemical method, and then preparing the ionic conductive electrolyte layer AlPO4 and the ITO layer on the electrochromic layer in sequence through a magnetron sputtering method. The device has the advantages of rich color change, quick response, long cycle life and the like, and can be widely applied to the fields of intelligent windows, energy-saving displays, glass curtain walls and the like. The invention provides a new thought and technical scheme for the development of high-performance organic electrochromic materials.

The application discloses a multifunctional intelligent photovoltaic window which is assembled by a multifunctional variable color unit and a silicon solar cell, and has the characteristics of wide wave adjustment, self-driving and self-cleaning. The laminated structure multifunctional variable color unit mainly comprises a vanadium dioxide / silicon dioxide / polyurethane nanocomposite film, a polymer stable liquid crystal with a near-crystal-cholesteric phase transition, an indium tin oxide and a silicon dioxide coating, which are respectively used as a near-infrared light adjusting layer, a visible light adjusting layer, an electrothermal layer and a super-hydrophobic layer. Based on the above design, the intelligent photovoltaic window can realize dynamic adjustment of the transmittance in the wavelength range of 380-2500 nm, so that the ideal energy-saving effect is achieved. In combination with the high output power of the silicon cell and the excellent direct current heating effect of the indium tin oxide, the self-driving characteristic of the intelligent photovoltaic window is realized, and the energy-saving effect is further improved. In addition, the silicon dioxide super-hydrophobic coating with a contact angle of 150-160 degrees effectively solves the environmental dependence of the intelligent photovoltaic window, and the intelligent photovoltaic window also has a good vision under complex weather conditions such as rain and snow. The application can widen the application of the intelligent photovoltaic window in the fields of energy-saving buildings, automobiles and flexible photoelectric devices.

The invention provides an indium tin oxide mechanical property simulation method and device and electronic equipment, and relates to the technical field of indium tin oxide simulation, and the indium tin oxide mechanical property simulation method comprises the following steps: carrying out proton irradiation simulation on an indium tin oxide material virtual model according to obtained proton environment parameters to obtain primary recoil atomic characteristic data; carrying out atom collision simulation according to the primary recoil atom characteristic data and the obtained cell expansion model of the indium tin oxide to obtain defect atom concentration; constructing a defect indium tin oxide model according to the defect atom concentration; and performing a tensile test on the defective indium tin oxide model to obtain defect stress-strain data. According to the method, the accuracy of mechanical property simulation of the indium tin oxide can be improved.

The application belongs to the technical field of lead-free tin paste, and particularly relates to high-performance lead-free tin paste, a preparation method and application thereof; the high-performance lead-free tin paste comprises lead-free alloy powder, carbon nanotube composite and fluxing agent in a mass ratio of 12-15:0.5-1:84.5-87; the carbon nanotube composite comprises carbon nanotubes, carbon nanohorns, nano indium tin oxide, quaternary ammonium salt surfactant and liquid rosin; the fluxing agent comprises, in terms of mass percentage, hydrogenated rosin 30-40%, activating agent 5-10%, thixotropic agent 4-8%, stabilizer 1-5% and solvent to make up the balance to 100%; the high-performance lead-free tin paste provided by the application has low welding point cavity rate, high shear strength and good temperature cycle impact resistance.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

The invention belongs to the technical field of zinc ion batteries, and particularly relates to a zinc metal negative electrode and a zinc ion battery. The zinc metal negative electrode comprises a zinc metal substrate and a coating covering the surface of the zinc metal substrate, the coating comprises a conductive metal oxide; the coating is formed on the zinc metal substrate in a manner independent of an organic polymer binder. According to the scheme, the use of an insulating organic polymer adhesive is avoided, so that the conductivity of the coating is improved, and the structural controllability of the coating is improved. The high-conductivity indium tin oxide (ITO) nanorod is prepared through cooperation of microwave solvothermal synthesis and high-temperature calcination, and a protective layer which is free of a binder and controllable in structure is constructed on the surface of the zinc foil through the electrophoretic deposition technology.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The invention provides a middle-infrared-band low-infrared-emissivity material and a preparation method thereof. The middle-infrared-band low-infrared-emissivity material comprises a low-emissivity composite layer, an anti-rust paint layer and a base layer which are sequentially connected. The low-emissivity composite layer is one of a first low-emissivity layer, a second low-emissivity layer and a second low-emissivity layer; the raw material of the first low-emissivity layer is one or more of polyurethane resin, fluorocarbon resin and epoxy resin; the raw material of the second low-emissivity layer is one of a conductive film and compound slurry; the conductive thin film is one or more of antimony-doped tin oxide, fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide and a silver nanowire transparent thin film. The polyurethane resin provided by the invention can reduce the introduction of oxygen-containing functional groups, so that the polyurethane resin has lower emissivity and good light transmittance in the wave band of 8-14 microns, and the low emissivity of the material can be controlled by regulating and controlling the thickness of the polyurethane resin layer.

The application discloses a water-soluble polymer-based proton-type memristor and a preparation method thereof. The memristor has a sandwich structure and is sequentially composed of a top electrode, an inorganic resistive switching functional layer, an organic resistive switching functional layer and a bottom electrode. The top electrode is a metal active electrode, the bottom electrode is indium tin oxide (ITO), the inorganic resistive switching functional layer is a metal oxide film, and the organic resistive switching functional layer is a doping system composed of a water-soluble polymer and a doping material. The preparation process of the proton-type memristor is reliable and stable. The obtained memristor has the characteristics of high biocompatibility and green environmental protection. The device performance consistency and environmental dependence are improved, and the simulation of bionic synaptic plasticity is greatly improved. The device can be controlled by using a low voltage, has low power consumption, and has a good bidirectional current modulation effect, so that the device provides a possibility for further enriching synaptic functions and designing flexible wearable devices.