The invention discloses a photoelectric thin film capable of strengthening the adhesive force. A thin film structure comprises a substrate, one, two or multiple interface modification layers and a metal thin film layer, wherein the interface modification layers are the same or different in material; the substrate is a glass, quartz, lead-containing glass, ceramic, zirconium oxide, aluminum oxide, silicon wafer, mica or plastic substrate; the interface modification layers are made of silicon oxide, aluminum oxide, zirconium oxide, titanium oxide or a compound of two or more of the silicon oxide, the aluminum oxide, the zirconium oxide and the titanium oxide; and the metal thin film layer is made of aluminum, silver, copper, gold and various metal alloys. Each interface modification layer is prepared by CVD, PVD or a chemical method such as a sol-gel method; and the metal thin film layer is prepared by the methods of PVD, CVD or chemical plating and the like. After the interface modification layers are adopted, the adhesion properties of the substrate and the metal thin film layer are obviously improved; the disadvantage that the metal thin film layer easily falls off on the substrate is well overcome; and the photoelectric thin film can be applied to the fields of a photoelectric device electrode, a light reflector or an anti-electromagnetic interference protective layer and the like.