75977 results about "Alloy" patented technology

To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

The present invention provides a surgical implant which can be made of a metal that corrodes while implanted in the tissue of a patient. The surgical implant can include a electrical insulator for reducing the conductivity of the implant. The surgical implant can be in the form of a staple, and insulator can be in the form of an anodized surface layer.

An antimicrobial composition comprising (a) a cationic surfactant derived from the condensation of fatty acids and esterified dibasic amino acids, such as lauric arginate, and (b) an antimicrobial metal, such as elemental silver or alloys thereof or silver compounds. The composition may be used as a stand alone antimicrobial formulation, or in combination with medical articles or medical devices.

A closure element is disclosed. The closure element includes a body. The body includes a plurality of tissue engaging portions extending from the body. The body is movable from a compressed state to a deployed state. The body includes a material. Silver or alloys thereof are included as a component of a coating over and/or a mixture with the material of at least a portion of the body.

Described herein are semiconductor structures comprising (i) a Si substrate; (ii) a buffer region formed directly over the Si substrate, wherein the buffer region comprises (a) a Ge layer having a threading dislocation density below about 10⁵ cm⁻²; or (b) a Ge_1-xSn_x layer formed directly over the Si substrate and a Ge_1-x-ySi_xSn_y layer formed over the Ge_1-xSn_x layer; and (iii) a plurality of III-V active blocks formed over the buffer region, wherein the first III-V active block formed over the buffer region is lattice matched or pseudomorphically strained to the buffer region. Further, methods for forming the semiconductor structures are provided and novel Ge_1-x-ySi_xSn_y, alloys are provided that are lattice matched or pseudomorphically strained to Ge and have tunable band gaps ranging from about 0.80 eV to about 1.4O eV.

Metal foils, wires, and seamless tubes with increased mechanical strength are provided. As opposed to wrought materials that are made of a single metal or alloy, these materials are made of two or more layers forming a laminate structure. Laminate structures are known to increase mechanical strength of sheet materials such as wood and paper products and are used in the area of thin films to increase film hardness, as well as toughness. Laminate metal foils have not been used or developed because the standard metal forming technologies, such as rolling and extrusion, for example, do not lend themselves to the production of laminate structures. Vacuum deposition technologies can be developed to yield laminate metal structures with improved mechanical properties. In addition, laminate structures can be designed to provide special qualities by including layers that have special properties such as superelasticity, shape memory, radio-opacity, corrosion resistance etc. Examples of articles which may be made by the inventive laminate structures include implantable medical devices that are fabricated from the laminated deposited films and which present a blood or body fluid and tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of a laminated film material deposited and etched into regions of structural members and web regions subtending interstitial regions between the structural members. An endoluminal graft is also provided which is made of a biocompatible metal or metal-like material. The endoluminal stent-graft is characterized by having controlled heterogeneities in the stent material along the blood flow surface of the stent and the method of fabricating the stent using vacuum deposition methods.

The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that the source region in the source and drain regions comprises GeSn alloy, and a tunnel dielectric layer is optionally comprised between the GeSn alloy of the source region and the channel region. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn alloy having a narrow band gap is formed by implanting precursors and performing a laser rapid annealing, the on-state current of TFET is effectively enhanced, accordingly it has an important application prospect in a high performance low power consumption application.

A method for forming germanium tin layers and the resulting embodiments are described. A germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer of germanium tin is formed on the substrate. The germanium tin layer is selectively deposited on the semiconductor regions of the substrate and can include thickness regions of varying tin and dopant concentrations. The germanium tin layer can be selectively deposited by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.

Compositions, apparatus incorporating a composition, and methods of use are described, one composition embodiment consisting essentially of one or more reactive metals in major proportion, and one or more alloying elements in minor proportion, with the provisos that the composition is high-strength, controllably reactive, and degradable under defined conditions. Compositions of the invention may exist in a variety of morphologies, including a reactive metal or degradable alloy processed into an alloy of crystalline, amorphous or mixed structure that may constitute the matrix of other composition, for instance a composite. Methods of using apparatus comprising a composition, particularly in oilfield operations are also described (e.g. flow and displacement control, sensors, actuators). This abstract allows a searcher or other reader to quickly ascertain the subject matter of the disclosure. It will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

A nanostructured composite material comprising semiconductor nanocrystals in a crystalline semiconductor matrix. Suitable nanocrystals include silicon, germanium, and silicon-germanium alloys, and lead salts such as PbS, PbSe, and PbTe. Suitable crystalline semiconductor matrix materials include Si and silicon-germanium alloys. A process for making the nanostructured composite materials. Devices comprising nanostructured composite materials.

Disclosed are a transition metal dichalcogenide alloy and a method of manufacturing the same. A method of manufacturing a transition metal dichalcogenide alloy according to an embodiment of the present disclosure includes a step of depositing transition metal dichalcogenide on a substrate using atomic layer deposition (ALD); and a step of forming a transition metal dichalcogenide alloy by thermally treating the transition metal dichalcogenide with a sulfur compound.

A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, the third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.

A substrate supporting apparatus includes a plate member of an aluminum alloy having a flat upper surface, bottomed pits formed in the plate member, and spacer members held in the pits, individually. The spacer members are sapphire spheres. The diameter of each spacer member is a little smaller than that of each pit. The upper end of each spacer member projects from the upper surface of the plate member. A spot facing is formed in a region that includes the open edge portion of the pit. A bending portion which is obtained by plastically deforming the open edge portion of the pit toward the spacer member is formed on a bottom surface of the spot facing. A V-shaped groove is formed behind the bending portion.

A non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side wall. The electrode is manufactured with a predetermined thickness and juxtaposed against a side wall of the chalcogenide alloy structure, wherein at least one of the side walls is substantially perpendicular to a planar surface of the substrate. The thickness of the electrode is used to control the size of the active region created within the chalcogenide alloy structure. Additional memory cells can be created along rows and columns to form a memory matrix. The individual memory cells are accessed through address lines and address circuitry created during the formation of the memory cells. A computer can thus read and write data to particular non-volatile memory cells within the memory matrix.

The electrode material for a lithium secondary battery according to the present invention includes particles of a solid state alloy having silicon as a main component, wherein the particles of the solid state alloy have a microcrystal or amorphous material including an element other than silicon, dispersed in microcrystalline silicon or amorphized silicon. The solid state alloy preferably contains a pure metal or a solid solution. The composition of the alloy preferably has an element composition in which the alloy is completely mixed in a melted liquid state, whereby the alloy has a single phase in a melted liquid state without presence of two or more phases. The element composition can be determined by the kind of elements constituting the alloy and an atomic ratio of the elements.

A method is disclosed for utilizing a deformable article of manufacture formed at least partly of a shape memory alloy. The method includes the steps of deforming the article from a first predetermined configuration to a second predetermined configuration while the shape memory alloy is, at least partially, in its stable martensitic state and at a first temperature. A resisting force is applied to the deformed article of manufacture using a restraining means and the article is heated from the first temperature to a second temperature in the presence of the resisting force. The stable martensitic state is transformed to a metastable stress-retained martensitic state. The resisting force is then removed allowing the alloy to transform to its austenitic state and the shape of the article to be restored substantially to its first configuration. Devices primarily medical devices operative by employing this method are also disclosed.