Electroless deposition process on a silicon contact
a silicon contact and electroless technology, applied in the direction of liquid/solution decomposition chemical coating, coating, material nanotechnology, etc., can solve the problems of affecting the device yield of the fabricated substrate, the deposition process for storing these materials, and the displacement of voids from one layer to the nex
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[0033] Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, and alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
Metal-Containing Interconnect Proc...
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