31634 results about "High density" patented technology

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Network architecture, computer system and/or server, circuit, device, apparatus, method, and computer program and control mechanism for managing power consumption and workload in computer system and data and information servers. Further provides power and energy consumption and workload management and control systems and architectures for high-density and modular multi-server computer systems that maintain performance while conserving energy and method for power management and workload management. Dynamic server power management and optional dynamic workload management for multi-server environments is provided by aspects of the invention. Modular network devices and integrated server system, including modular servers, management units, switches and switching fabrics, modular power supplies and modular fans and a special backplane architecture are provided as well as dynamically reconfigurable multi-purpose modules and servers. Backplane architecture, structure, and method that has no active components and separate power supply lines and protection to provide high reliability in server environment.

The present invention relates generally to methods for activating and expanding cells, and more particularly, to a novel method to activate and/or stimulate cells that maximizes the expansion of such cells to achieve dramatically high densities. In the various embodiments, cells are activated and expanded to very high densities in a short period of time. In certain embodiments, cells are activated and expanded to very high numbers of cells in a short period of time. Compositions of cells activated and expanded by the methods herein are further provided.

A microsphere-based analytic chemistry system and method for making the same is disclosed in which microspheres or particles carrying bioactive agents may be combined randomly or in ordered fashion and dispersed on a substrate to form an array while maintaining the ability to identify the location of bioactive agents and particles within the array using an optically interrogatable, optical signature encoding scheme. A wide variety of modified substrates may be employed which provide either discrete or non-discrete sites for accommodating the microspheres in either random or patterned distributions. The substrates may be constructed from a variety of materials to form either two-dimensional or three-dimensional configurations. In a preferred embodiment, a modified fiber optic bundle or array is employed as a substrate to produce a high density array. The disclosed system and method have utility for detecting target analytes and screening large libraries of bioactive agents.

A compact and efficient optical illumination system featuring planar multi-layered LED light source arrays concentrating their polarized or un-polarized output within a limited angular range. The optical system manipulates light emitted by a planar array of electrically-interconnected LED chips positioned within the input apertures of a corresponding array of shaped metallic reflecting bins using at least one of elevated prismatic films, polarization converting films, micro-lens arrays and external hemispherical or ellipsoidal reflecting elements. Practical applications of the LED array illumination systems include compact LCD or DMD video image projectors, as well as general lighting, automotive lighting, and LCD backlighting.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

The present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method; and, 4) providing a means of improved radical generation and delivery. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. [37 C.F.R. § 1.72(b)].

Polymeric delivery devices have been developed which combine high loading/high density of molecules to be delivered with the option of targeting. As used herein, “high density” refers to microparticles having a high density of ligands or coupling agents, which is in the range of 1000-10,000,000, more preferably between 10,000 and 1,000,000 ligands per square micron of microparticle surface area. A general method for incorporating molecules into the surface of biocompatible polymers using materials with an HLB of less than 10, more preferably less than 5, such as fatty acids, has been developed. Because of its ease, generality and flexibility, this method has widespread utility in modifying the surface of polymeric materials for applications in drug delivery and tissue engineering, as well other other fields. Targeted polymeric microparticles have also been developed which encapsulate therapeutic compounds such as drugs, cellular materials or components, and antigens, and have targeting ligands directly bound to the microparticle surface. Preferred applications include use in tissue engineering matrices, wound dressings, bone repair or regeneration materials, and other applications where the microparticles are retained at the site of application or implantation. Another preferred application is in the use of microparticles to deliver anti-proliferative agents to the lining of blood vessels following angioplasty, transplantation or bypass surgery to prevent or decrease restenosis, and in cancer therapy. In still another application, the microparticles are used to treat or prevent macular degeneration when administered to the eye, where agents such as complement inhibitors are administered.

The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

A fiber distribution frame (10) includes a fixture (26) having a plurality of modules (58) mounted side-by-side within said fixture with each of the modules being individually mounted in a line of travel. Each of the modules (58) can be locked in any one of a plurality of discrete positions within the line of travel. Each of the modules (58) contains a plurality of adapters (90) for receiving and retaining fiber optic connectors. Further, the fixture (26) may be tilted downwardly to provide access to the rear of the fixture.

A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads. The method obviates issues such as processability and thermal stability associated with low dielectric constant materials by avoiding their use. Since air, which has the lowest dielectric constant, is used as the intralevel dielectric the structure created by this method would possess a very low capacitance and hence fast propagation speeds. Such structure is ideally suitable for high density interconnects required in high performance microelectronic device chips.

A high density plasma chemical vapor deposition apparatus includes an upper gas supply nozzle which includes a nozzle body, a gas supply passage formed vertically in the nozzle body, a nozzle cover attached to a lower surface of the horizontal portion of the nozzle body, and a plurality of gas inlets formed through the nozzle cover to uniformly supply the processing gas towards a semiconductor wafer within the processing chamber.

A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed p+ region to form a p-n diode in the substrate underlying the gate of the transistor. Further, the wordline is formed from a buried diffusion N+ layer while the column bitline is formed from a counterdoped polysilicon layer.

A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

A method of forming a dielectric layer is described. The method first deposits an initially-flowable layer on a substrate. The initially-flowable layer is then densified by exposing the substrate to a high-density plasma (HDP). Essentially no additional material is deposited on the initially-flowable layer, in embodiments, but the impact of the accelerated ionic species serves to condense the layer and increase the etch tolerance of the processed layer.

An atomic layer deposition system and method utilizing radicals generated from a high-density mixed plasma for deposition is disclosed. A high-quality oxide or oxynitride can be deposited by exposing a substrate to a first precursor which is adsorbed onto the substrate during a first phase of one deposition cycle. After purging the deposition chamber, the substrate is exposed to a second precursor which includes oxygen radicals and krypton ions formed from the high-density mixed plasma. The ions and radicals are formed by introducing a radical generating feed gas (e.g., O₂) and an ion generating feed gas into a plasma chamber and exciting the gases to form the high-density mixed plasma. The radicals and ions are then introduced to the substrate where they react with the first precursor to deposit a layer of the desired film. Krypton is preferably used as the ion generating feed gas because the metastable states of krypton lead to an efficient dissociation of oxygen into oxygen radicals when compared with other inert gases.

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.