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38results about How to "Reduce inductance" patented technology

Vehicle-mounted capacitor

The utility model discloses a vehicle-mounted capacitor, which comprises an insulating layer, a capacitor inner core, an input busbar and an output busbar, the output busbar comprises a positive busbar and a negative busbar which are stacked, the positive busbar comprises a positive welding pole plate and a positive alternating current leading-out end, and the negative busbar comprises a negative welding pole plate and a negative alternating current leading-out end; the input busbar comprises a positive direct-current bus end and a negative direct-current bus end, the positive direct-current bus end and the negative direct-current bus end are located on a positive welding pole plate and a negative welding pole plate respectively, the positive welding pole plate and the negative welding pole plate are arranged in a stacked mode, and the positive direct-current bus end and the negative direct-current bus end are arranged in a stacked mode; a first concave groove and a second concave groove are formed in the two opposite sides of the insulating layer respectively, so that the positive pole alternating current leading-out end and the negative pole alternating current leading-out end are arranged in the first concave groove and the second concave groove in the two opposite sides of the insulating layer in a stacked mode respectively. And the riding experience of the user is improved.
Owner:ZHEJIANG HONGFA WUFENG CAPACITOR CO LTD

Electric power shovel, and method of assembling drive unit for driving motor of electric power shovel

The present application provides an electric working machine, and a method of assembling a drive unit for driving a motor of the electric working machine, one aspect of which relates to an electric working machine provided with a motor, a circuit substrate, a first semiconductor switch, a second semiconductor switch, a first conductive line, a second conductive line, and a solid metal member. The circuit substrate has a first circuit surface, a second circuit surface, and a through hole. The first semiconductor switch is mounted on the first circuit surface and has a first terminal. The second semiconductor switch is mounted on the second circuit surface and has a second terminal. The first conductive line is disposed on the first circuit surface and electrically connected to the first terminal. The second conductive line is disposed on the second circuit surface and electrically connected to the second terminal. The solid metal member is inserted into the through hole and electrically connected to the first conductive line and the second conductive line.
Owner:MAKITA CORP

Method for measuring low-voltage direct current resistance of three-phase transformer bank

The invention provides a method for measuring low-voltage direct-current resistance of a three-phase transformer bank, and belongs to the technical field of transformer measurement. The invention provides a method for measuring low-voltage direct-current resistance of a three-phase transformer bank. The method comprises the following steps of: connecting all phases of windings on a high-voltage side together; connecting the high-voltage side three-phase winding with the low-voltage side three-phase winding; direct current is introduced into the high-voltage side three-phase winding; measuring the voltage of the corresponding high-voltage side winding and the corresponding low-voltage side winding to be measured and the current of the corresponding high-voltage side winding or the corresponding low-voltage side winding; and calculating the direct current resistance of the to-be-measured phase according to the measured voltage and current. The three-phase transformer bank low-voltage direct-current resistance measuring method provided by the invention has the advantages that during measurement, direct current is introduced into the high-voltage side three-phase windings, so that the current in the three high-voltage side windings forms a loop, the number of excitation ampere turns of the three-phase iron core columns is increased, the three iron core columns are magnetically saturated, the inductance of coils is reduced, and the measurement accuracy is improved. And the test time is shortened.
Owner:BAODING TIANWEI GROUP TEBIAN ELECTRIC

Deep trench field effect transistor and method of manufacturing the same

ActiveCN121218681BGood process compatibilityIon implantation process is simpleField effectField-effect transistor
The application provides a deep trench field effect transistor and a preparation method thereof, which comprises the following steps: forming a P-type layer and an N-type layer in an N-type substrate; forming a gate trench and a terminal trench; forming an N-type source region by ion implantation; forming a gate oxide layer in the trench; forming a first polysilicon layer, a thick oxide layer and a second polysilicon layer in the trench; depositing a dielectric layer; forming a drain contact region, a source contact region, a gate contact region and a terminal contact region; forming a source electrode, a gate electrode and a drain electrode, wherein the source electrode is connected with the N-type source region and the terminal contact region simultaneously. The source electrode, the gate electrode and the drain electrode can be attached to a heat dissipation substrate simultaneously, the heat dissipation path is greatly optimized, and the source path inductance is reduced; the source contact region of the application is arranged in the terminal region, and the source contact region is realized by directly etching the dielectric layer and the substrate below the dielectric layer, the process controllability is high, the steps are simple, and the etching process of the source contact region has high stability.
Owner:深圳市创飞芯源半导体有限公司

Compact Marx generator based on impact ionization semiconductor device

PendingCN122001340AMeet safe conduction conditionsSmall equivalent capacitancePulse generation by energy-accumulating elementCapacitancePower semiconductor device
The invention discloses a compact Marx generator based on an impact ionization semiconductor device, and relates to the field of a pulse power technology and a power semiconductor device crossing technology. Comprising N stages of sub Marx generators which are cascaded in sequence, and each sub Marx generator comprises an impact ionization semiconductor device, a first charging isolation element, a second charging isolation element, an energy storage unit, a first ground capacitor and a second ground capacitor; for any stage of sub Marx generator, the first end of the impact ionization semiconductor device is connected with the first end of the first charging isolation element, the first end of the first ground capacitor and the first end of the energy storage unit, the second end of the first ground capacitor is grounded, the second end of the impact ionization semiconductor device is connected with the first end of the second charging isolation element, and the second end of the second charging isolation element is grounded. The second end of the second charging isolation element is connected with the second end of the energy storage unit and the first end of the second ground capacitor, and the second end of the second ground capacitor is grounded. According to the compact Marx generator, the conduction safety is improved.
Owner:XI AN JIAOTONG UNIV

Electronic device comprising a semiconductor module

An electronic device (100) applied to an electric motor includes a wiring substrate (101), an electric connection wiring (150) disposed at a substantially center of the wiring substrate and connected to a power source, a plurality of motor connection wirings (114-116) disposed at a periphery side of the wiring substrate compared to the electric connection wiring and connected to the electric motor, and a plurality of semiconductor modules (120) each including a plurality of semiconductor elements (123b, 124b) and a resin mold (125) integrally sealing the plurality of semiconductor elements. The plurality of semiconductor modules are disposed on the electric connection wiring or at a position at the periphery side of the wiring substrate compared to the electric connection wiring and at a center side of the wiring substrate compared to the motor connection wirings, and electrodes of at least a part of the plurality of semiconductor modules are mounted on the electric connection wiring.
Owner:DENSO CORP

Aluminum nickel iron magnetic powder core and its preparation method and application

The present application relates to the field of magnetic material technology, and more specifically, to an aluminum-nickel-iron magnetic powder core and its preparation method and application. An aluminum-nickel-iron magnetic powder core comprises the following components in parts by weight: 30-85 parts of modified aluminum-nickel-iron magnetic powder, 11-55 parts of resin composition, 2-10 parts of diluent, 0.3-1.2 parts of curing agent and 0.5-2.5 parts of accelerator, wherein the resin composition comprises polyetherimide modified epoxy resin, phenolic resin and hyperbranched polyimide resin. An aluminum-nickel-iron magnetic powder core of the present application improves the problems of insufficient magnetic properties, high eddy current loss, poor high-frequency performance of existing magnetic powder cores, and difficulty in meeting some market demands, so that the obtained aluminum-nickel-iron magnetic powder core has high effective magnetic permeability, large magnetic flux density, and low eddy current loss, meeting the market demand for magnetic powder core performance.
Owner:HUACUI MICROMAG ELECTRONICS (JIANGSU) CO LTD

Power conversion device

A power conversion device includes: a first power circuit portion and a second power circuit portion each having a power semiconductor element and a plurality of conductor portions sandwiching the power semiconductor element and connected to an emitter and a collector of the power semiconductor element, respectively; and a flow path forming body accommodating the first and second power circuit portions and allowing a refrigerant to flow, the conductor portions on the emitter side of the first power circuit portion being arranged opposite to the conductor portions on the collector side of the second power circuit portion, and the conductor portions on the emitter side of the first power circuit portion and the conductor portions on the collector side of the second power circuit portion being connected by a plurality of electrically conductive fins in contact with the refrigerant.
Owner:HITACHI LTD

Electrical connector, electrical system comprising such a connector and rail vehicle comprising such a system

ActiveCN114944575Breduce lossesReduce skin effect
The electrical connector (10) includes a pair of plates (20) having a first conductive plate (12) and a second conductive plate (14), each plate having a central portion (24) and two connecting lugs (32, 34). The connecting lugs of each plate extend longitudinally from opposite edges (28, 30) of the central portion and are laterally offset from each other. The first and second plates are stacked on top of each other, with the central portions overlapping and separated by a gap (36). The connecting lugs of the first and second plates on each of the opposite edge sides are laterally offset from each other. The electrical connector further includes an insulating structure comprising a sandwich of electrically insulating material accommodated in the gap (36) between the central portions of the first and second plates.
Owner:ALSTOM HOLDINGS SA

Power module and electronic device

The invention discloses a power module and electronic equipment. The power module comprises a power chip; the driving integrated circuit is electrically connected with the power chip; the heat dissipation substrate is provided with a first surface and a second surface which are oppositely arranged, a first side and a second side which are opposite in the length direction of the heat dissipation substrate, and a third side close to the driving integrated circuit, the power chip is arranged on the first surface of the heat dissipation substrate, and the heat dissipation substrate comprises an insulating layer, a first conductive layer and a second conductive layer, the second conductive layer comprises a main body part and an extension part connected with the main body part, the extension part extends towards the outer side of the insulating layer, and the extension part is arranged on at least one of the first side, the second side and the third side; at least one core-pulling pinhole is formed in the side, opposite to the second face of the heat dissipation substrate, of the packaging resin, the projection, in the thickness direction of the packaging resin, of the core-pulling pinhole is partially overlapped with the corresponding extending part, and the core-pulling pinhole is located on the outer side of the insulating layer.
Owner:HISENSE HOME APPLIANCES GRP CO LTD

Interposer power network routing method and system

The invention discloses an intermediate layer power supply network wiring method and system. The method comprises the following steps: determining each grid of a connection layer; constructing a plurality of first connecting lines along the first direction and a plurality of second connecting lines along the second direction; combining the adjacent pins in the first direction and the second direction into a group of communicated pins in each grid; dividing each grid into a plurality of groups of grids; establishing a connection relationship between the first connecting lines and each group of grids, so that the pins in each group of grids are correspondingly connected with the first connecting lines or all the first connecting lines are distributed to the corresponding grids; establishing a connection relationship between the second connecting lines and each group of grids, so that the pins in each group of grids are correspondingly connected with the second connecting lines or all the second connecting lines are distributed to the corresponding grids; and performing wiring according to the pins or the grids connected with the first connecting lines and the second connecting lines respectively. According to the invention, the performance of the corresponding chip integration system can be improved.
Owner:ZHUHAI SILICON CORE TECHNOLOGY CO LTD

VGA male socket connector

The utility model relates to a VGA male socket connector in the connector technical field, which comprises a hardware shell, a plastic main body and a hardware terminal, the surface of the plastic main body is provided with hardware, one end of the hardware terminal in the horizontal direction is connected with a conductor of a cylindrical structure, one end of the hardware terminal in the vertical direction is in a flat structure, and the other end of the hardware terminal in the vertical direction is connected with the plastic main body. A groove for reducing the surface volume of the hardware terminal is formed in one end of the hardware terminal, which is of a flat structure; the limiting structure is a convex point which is bulged towards one end; according to the utility model, two salient points are respectively stamped on two sides of the hardware shell of the connector through stamping, so that when the connector is assembled with an external mechanism, the distance between the control panel and the connector can be regulated and controlled through the heights of the salient points between the mechanism panel and the connector, that is, when the mechanism panel is locked with the connector, the control panel is locked with the connector through the salient points. And the panel is pressed by the salient points after being contacted with the salient points, so that the panel cannot move forwards any more, and the distance between the panel and the connector is accurately ensured.
Owner:DONGGUAN YANDA ELECTRONIC TECH CO LTD

Environment-friendly anti-interference mutual inductor

This utility model relates to the field of current transformer technology and discloses an environmentally friendly anti-interference current transformer, including two current transformer housings. Current transformer assemblies are disposed inside the two current transformer housings, and bases are installed on the bottom surfaces of both current transformer housings. This environmentally friendly anti-interference current transformer facilitates disassembly of the current transformer housings by setting a fixing plate on the upper surface of the housings and connecting them with bolts, while also using a snap-fit ​​mechanism between the two housings. This facilitates the recycling of the internal components. During use, the secondary winding coil is spirally and uniformly wound, reducing the distributed capacitance and inductance of the winding and enhancing the overall anti-interference capability. As the cable passes through the middle area of ​​the current transformer housing, it is guided by a limiting rope to be as close as possible to the center of the iron core, reducing the problem of uneven magnetic field distribution within the iron core caused by eccentricity and improving the anti-interference capability.
Owner:XINXIANG ZHONGKAIKE ELECTRIC POWER TECHNOLOGY CO LTD

PCB circuit board with overclocking characteristic

The invention relates to the technical field of PCB design, and discloses a PCB with an overclocking characteristic, the PCB comprises a bare board, a BGA array, a graphics card golden finger, a differential line and an RAM golden finger, the differential line is arranged on the upper surface of the bare board, the BGA array, the graphics card golden finger and the RAM golden finger are all installed on the top of the bare board, and the BGA array is arranged on the upper surface of the bare board. The RAM golden finger is communicated with the BGA array through a single-sided board, the BGA array is communicated with the graphics card golden finger through the differential lines, the differential lines are obliquely arranged relative to the BGA array, the differential lines are parallel to each other, and the BGA array is used for being connected with a CPU (Central Processing Unit); the graphics card golden finger accords with a high-speed communication protocol and is used for connecting a graphics card; and the RAM golden finger is used for connecting a memory bank. According to the invention, crosstalk can be reduced, skew effect of the glass fiber is reduced, and parasitic capacitance and inductance of the residual end of the via hole are reduced, so that time difference is reduced, and overclocking failure is avoided.
Owner:AOSHIKANG TECH CO LTD +1

Single-tooth punching sheet structure of sectional type permanent magnet motor

The utility model discloses a single-tooth punching sheet structure of a sectional type permanent magnet motor, a plurality of single-tooth punching sheets are stacked in sequence to form a single-tooth iron core, a plurality of single-tooth iron cores are assembled along the circumferential direction to form a stator iron core, each single-tooth punching sheet comprises a stator tooth and magnet yokes, the magnet yokes respectively protrude from the front end part of the stator tooth to two sides, and the magnet yokes are arranged on the stator tooth. And the free end of the magnet yoke is provided with a reinforcing part protruding towards the circle center direction of the stator iron core. According to the utility model, the two adjacent single-tooth punching sheets are correspondingly matched and spliced to form the reinforcing convex parts, so that the splicing contact area between the single-tooth punching sheets can be increased, and the stability of the spliced stator iron core is improved; the air gap magnetic resistance of the motor can be reduced, the inductance of the motor is reduced, and the electrical time constant is reduced, so that the response speed of the motor is improved; and moreover, the increased contact surface is also beneficial to dispersing over-concentrated magnetic flux density of the yoke part of the motor, reducing local heating of the motor and reducing the size of the motor. And meanwhile, the service life of the stator punching sheet processing die can be prolonged.
Owner:DINGXINGXIAN RUCLEN DC TORQUE MOTOR MFG CO LTD

Filter and vehicle-mounted equipment

The embodiment of the utility model discloses a filter and vehicle-mounted equipment. The filter comprises a noise sensing module used for sensing a noise signal on a power line, and the noise sensing module and the power line are electrically isolated through a magnetic core assembly; and the signal generation module is electrically connected with the noise sensing module and is used for receiving and processing the noise signal, generating a compensation signal opposite to the noise signal in phase and injecting the compensation signal into the power line. Through the above mode, the embodiment of the utility model can effectively reduce electromagnetic interference, reduce the number of common-mode chokes or necessary common-mode chokes, so that the noise reduction performance of the filter is fully exerted, the hardware cost is reduced, and the size of the filter is greatly reduced.
Owner:ZHUONENG AUTOMOTIVE TECHNOLOGY (SHENZHEN) CO LTD

Length self-sensing artificial muscle

The invention discloses a length self-sensing artificial muscle, and relates to an inductance type length sensor technology and an artificial muscle technology. A fluid-driven artificial muscle is seamlessly integrated with an inductance type length sensor, the artificial muscle is a fluid-driven elastic telescopic unit, and the inductance type length sensor is a wire winding which is wound outside the artificial muscle and is formed by connecting a plurality of groups of coils in series. The mutual inductance between the wire windings is reduced or increased along with the stretching of the artificial muscle, so that the inductance of the coil is monotonically reduced along with the increase of the length of the artificial muscle. The length of the artificial muscle can be detected in real time by measuring the inductance of the coil, and the resolution is up to the submillimeter level and is not influenced by factors such as load size and deformation speed. The length self-sensing artificial muscle provided by the scheme can be widely applied to various robot systems driven by the artificial muscle, such as an earthworm crawling imitating robot capable of body sensing, a rigid-flexible hybrid bionic arm capable of realizing accurate position control and interactive response, a complex humanoid robot system and the like.
Owner:UNIV OF SCI & TECH OF CHINA

A low-inductance packaging structure and packaging method for a power semiconductor module

ActiveCN113035847BReduce electromagnetic oscillationImprove reliabilitySemiconductor/solid-state device detailsSolid-state devices
The present invention relates to the technical field of power semiconductor modules, and proposes a low-inductance packaging structure of a power semiconductor module, comprising a substrate and a power semiconductor module unit arranged on the substrate, the power semiconductor module unit is used to form a dual-switch circuit structure capable of reducing inductance, the power semiconductor module unit comprises a plurality of lining plates arranged at intervals on the substrate, adjacent lining plates are connected by a first bonding wire, two connected lining plates are connected with a power terminal group extending out of an outer tube shell, the power terminal group comprises two sub-power terminals which are partially overlapped but not in contact with each other, and are used to generate electromagnetic coupling when the two sub-power terminals conduct currents in different directions to reduce inductance; a low-inductance packaging method of a power semiconductor module is also proposed, which is used to manufacture the low-inductance packaging structure of a power semiconductor module proposed by the present invention. The present invention has the advantages of high reliability, high power density and low inductance.
Owner:ZHUZHOU CRRC TIMES SEMICON CO LTD

Thermal ultrasonic spherical gold wire bonded gold bump preparation method, flip-chip bonding structure and chip

The invention discloses a gold bump preparation method for thermal ultrasonic spherical gold wire bonding, a flip-chip bonding structure and a chip, and relates to the field of chips. According to the mass fraction, the method comprises the following steps that a plurality of gold protruding points are formed on a flip-chip bonding pad through hot ultrasonic spherical gold wire bonding, and the width of the flip-chip bonding pad is larger than or equal to 150 micrometers. A plurality of gold bumps are formed through thermal ultrasonic spherical gold wire bonding, so that the plurality of gold bumps can support a flip-chip bonding pad with the width greater than or equal to 150 [mu] m for a large-size chip. Based on the specific requirements of gold wires with different diameters and the sizes of the bonding pads, combined preparation of various gold bumps is performed, the contact area of the bonding pads on the flip chip and the bonding pads on the substrate is increased, electrical signal interconnection between the bonding pads is completed, the gold bump process replaces micro gold bumps and copper columns which are high in cost and complex in process, the cost can be reduced, and the production efficiency is improved. The efficiency is improved.
Owner:WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENT CO LTD

Power semiconductor module and power conversion device

Provided are a power semiconductor module and a power conversion device that have an internal wiring structure that can reduce electrical vibration that occurs in internal wiring. This power semiconductor module comprises: an upper arm that has a first substrate upon which at least one power semiconductor chip including a first switching element is mounted, and a second substrate upon which at least one power semiconductor chip including a second switching element connected in parallel to the first switching element is mounted; and a lower arm that has a third substrate upon which at least one power semiconductor chip including a third switching element is mounted, and a fourth substrate upon which at least one power semiconductor chip including a fourth switching element connected in parallel to the third switching element is mounted. The power semiconductor module is characterized in that: the upper arm has first wiring that connects the first substrate and the second substrate and connects an emitter or source for the first switching element to an emitter or source for the second switching element; and the first wiring is disposed at a position further away from the lower arm in comparison to the end portion on the far side away from the lower arm of the power semiconductor chip positioned furthest from the lower arm from among the power semiconductor chips of the upper arm.
Owner:MINEBEA POWER SEMICON DEVICE INC

Semiconductor device

ActiveCN113053843Breduce inductanceDevice materialLow inductance
A semiconductor device having a connection mechanism capable of reducing inductance is provided. A capacitor has a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet provided between the first connection terminal and the second connection terminal, the first connection terminal, the second insulating sheet, and the second connection terminal extending outward from the case. A semiconductor module has a terminal stack portion in which a first power terminal, a first insulating sheet, and a second power terminal are overlaid in this order. The first power terminal has a first bonding region electrically connected to the first connection terminal, the second power terminal has a second bonding region electrically connected to the second connection terminal, and the first insulating sheet has a platform portion extending in a direction from the second bonding region toward the first bonding region in plan view.
Owner:FUJI ELECTRIC CO LTD

High temperature resistant triaxial high voltage vacuum feedthrough structure

ActiveCN115279007Befficient releasereduce inductanceElectrical conductorLow inductance
The present invention relates to a high-temperature baking resistant triaxial high-voltage vacuum feed-in structure, comprising: an inner conductor column, a first end of which is a magnet terminal, the magnet terminal is used to connect the internal excitation coil of the magnet, and a second end of which is a transmission cable inner core terminal, the transmission cable inner core terminal is used to connect the power transmission line; an insulating cylinder, which is sleeved outside the inner conductor column, and its inner wall is fixedly connected to the outer wall of the inner conductor column, and the insulating cylinder is used to withstand high voltage and insulate the inner conductor column and the outer conductor; an outer conductor, which is sleeved outside the insulating cylinder, and its inner side is fixedly connected to the outer wall of the insulating cylinder, and the outer conductor is used to lead out the current loop. The present invention has the characteristics of high temperature resistance, low inductance, high insulation, high voltage resistance, and simple structure.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

Electrical connection assembly of a power module, power module and motor controller

ActiveCN224418046Ueasy to useAvoid Voltage Stress IncreasesElectric machineElectrical connection
The embodiment of the application provides a kind of power module electric connection component, power module and motor controller, belong to power electronics technical field.The electric connection component of the power module includes first electric conductor and second electric conductor, and at least two connecting parts and at least one accommodating part are included on the first electric conductor, the accommodating part is located between two adjacent connecting parts, the accommodating part is recessed towards the direction away from the connecting part, one end of each connecting part is used to be electrically connected with the power chip of power module, and the other end of the connecting part is used to be electrically connected with one of the positive electrode connecting end and the negative electrode connecting end of direct current power supply part;Second electric conductor is arranged on the accommodating part, and the second electric conductor is insulated from the accommodating part, one end of the second electric conductor is used to be electrically connected with the power chip, and the other end of the second electric conductor is used to be electrically connected with the other of the positive electrode connecting end and the negative electrode connecting end.The electric connection component of the power module of the application, by arranging the second electric conductor on the accommodating part, is conducive to reducing parasitic inductance.
Owner:SUZHOU INOSA UNITED POWER SYST CO LTD

Hybrid Intermediate Layer and Its Formation Method

PendingCN122094515Aimplement the buildBreak through the size limitSilicon interposerInterconnection density
This application discloses a hybrid interposer and a method for forming the same. The method includes: providing a glass interposer, the glass interposer including a plurality of discrete functional regions and a cut-out region located between adjacent functional regions, the glass interposer including opposing first and second surfaces; forming a first bonding layer on the first surface of the glass interposer; providing a plurality of silicon interposers, each silicon interposer including opposing third and fourth surfaces, the third surface having a second bonding layer; bonding at least one silicon interposer to each functional region of the glass interposer, such that the second bonding layer and the first bonding layer are mixed-bonded; and forming a molding compound covering the silicon interposers on the first surface of the glass interposer, the molding compound exposing the fourth surface of the silicon interposers. This method improves the size and interconnect density of the interposer and reduces the warpage of the interposer.
Owner:JCET GROUP CO LTD

High-density optoelectronic co-packaged module and method of making same, vertically scaled network

PendingCN122506699Ahigh densityImplement array integration
The embodiment of the present application relates to a kind of high-density optoelectronic co-packaging module and its preparation method, longitudinal extension network, the high-density optoelectronic co-packaging module, comprising: bare chip integrated circuit;Multiple optical communication chips, each of the optical communication chip at least shares a semiconductor functional layer, and the semiconductor functional layer is bonded with the bare chip integrated circuit by a bonding layer, each of the optical communication chip is configured to independently / collectively emit target modulation laser under the driving of the bare chip integrated circuit.The high-density optoelectronic co-packaging architecture provided in the application can solve the bottleneck problem of existing optoelectronic co-packaging technology in high-density integration, signal integrity, thermal management and manufacturing cost, etc., and provides a high-energy efficient, high-density, high-reliability optical communication solution for next-generation AI computing and data center interconnection.
Owner:HANGZHOU KAIKAI TECHNOLOGY CO LTD +1

Superconducting coil over-current protection device and circuit based on superconducting current-limiting cable

The invention relates to the technical field of superconducting coil over-current protection devices, in particular to a superconducting coil over-current protection device and circuit based on a superconducting current-limiting cable, and the device comprises a low-temperature Dewar box body which is filled with liquid nitrogen; the superconducting current-limiting cable is positioned in the low-temperature Dewar box body; and the cable joint is connected with the tail end of the superconducting current limiting cable, and the top extends out of the low-temperature Dewar box body. The superconducting current-limiting cable comprises a framework and a superconducting strip which is spirally wound on the periphery of the framework. The round core type superconducting current-limiting cable has the characteristics of high critical current, low inductance and high thermal stability, and can quickly respond within a few milliseconds at the moment when a short-circuit fault occurs, so that the short-circuit current is limited at a relatively low level.
Owner:JIANGXI LIANOVATION SUPERCONDUCTOR APPL CO LTD +1

High-frequency flexible flat cable (FFC) and flat cable plug-in mounting structure

The utility model relates to the technical field of electric connector manufacturing, in particular to a high-frequency flexible flat cable (FFC) and a flat cable plug-in mounting structure. For the high-frequency FFC, a plurality of signal conductors are arranged in a concentrated manner, and the power conductors are arranged in the areas on the two sides of the high-frequency FFC. And the long insulating layer, the non-metal reinforcing plate and the signal conductor are retracted in equal length so as to form a stub removing gap in the wire port area. Thus, on one hand, electromagnetic interference between the signal conductors is reduced, adverse effects on electric signal transmission caused by a magnetic field generated in the current transmission process of the power conductors are weakened, and the transmission quality of high-frequency signals can be improved; and on the other hand, the problems of poor signal conduction contact, overlarge resistance and the like caused by the stub effect are avoided, it is ensured that the FFC high-frequency flat cable has excellent electrical performance and mechanical performance, and the poor signal transmission problems of signal reflection, attenuation, distortion, delay, mode coupling and the like are solved.
Owner:CVILUX TECH SUZHOU

Inspection jig and inspection device

The invention provides an inspection jig and an inspection device which can easily reduce inductance generated in a wiring path for electrical inspection. An inspection jig (3) according to the present invention is provided with: a first probe (P1) that comes into contact with a first terminal (T1) of an object to be inspected (DUT); a second probe P2 for contacting a second terminal T2 of the inspection object DUT; and a cable (7) including a planar first conductor (71) for supplying current to the first probe (P1) and a planar second conductor (72) for supplying current to the second probe (P2), the first conductor (71) and the second conductor (72) being disposed facing each other with an insulator (73) therebetween, and the first conductor (71) and the second conductor (72) being disposed such that the overlap of the first conductor (71) and the second conductor (72) is maximized when viewed from the facing direction. The first conductor 71 and the second conductor 72 are disposed.
Owner:NIDEC PRECISION TESTING TECH CO LTD

An isolated three-phase ac-dc multi-port single-stage converter

The application provides an isolated three-phase AC-DC multi-port single-stage converter, which can be used as an AC-DC multi-port access power router. The core of the converter is composed of three tap transformers, primary / secondary three-phase conversion bridges, inductors and bus capacitors, and the converter has two AC ports and two DC ports and supports bidirectional power transmission between the ports. The topology can adapt to multiple power conversion scenarios: a single-phase AC application can be adapted by deleting a group of components; the topology is converted into an isolated three-phase AC-DC bidirectional single-stage converter by removing the secondary AC inductor; and the topology becomes a unidirectional converter by replacing the secondary switch with a diode and adding a filter inductor. The conversion bridges on both sides of the converter are controlled by SPWM or SVM, and the driving pulses can be synchronized, staggered or phase-shifted, so that AC and DC voltage decoupling control can be achieved. The application adopts a single-stage conversion architecture, which is simple, efficient, cost-reducing, quantity-reducing, dynamic response-improving and reliability-improving, and the control strategy is mature and easy to realize digitally.
Owner:张丽娜