23results about How to "Reduce inductance" patented technology

The present application provides an electric working machine, and a method of assembling a drive unit for driving a motor of the electric working machine, one aspect of which relates to an electric working machine provided with a motor, a circuit substrate, a first semiconductor switch, a second semiconductor switch, a first conductive line, a second conductive line, and a solid metal member. The circuit substrate has a first circuit surface, a second circuit surface, and a through hole. The first semiconductor switch is mounted on the first circuit surface and has a first terminal. The second semiconductor switch is mounted on the second circuit surface and has a second terminal. The first conductive line is disposed on the first circuit surface and electrically connected to the first terminal. The second conductive line is disposed on the second circuit surface and electrically connected to the second terminal. The solid metal member is inserted into the through hole and electrically connected to the first conductive line and the second conductive line.

The application provides a deep trench field effect transistor and a preparation method thereof, which comprises the following steps: forming a P-type layer and an N-type layer in an N-type substrate; forming a gate trench and a terminal trench; forming an N-type source region by ion implantation; forming a gate oxide layer in the trench; forming a first polysilicon layer, a thick oxide layer and a second polysilicon layer in the trench; depositing a dielectric layer; forming a drain contact region, a source contact region, a gate contact region and a terminal contact region; forming a source electrode, a gate electrode and a drain electrode, wherein the source electrode is connected with the N-type source region and the terminal contact region simultaneously. The source electrode, the gate electrode and the drain electrode can be attached to a heat dissipation substrate simultaneously, the heat dissipation path is greatly optimized, and the source path inductance is reduced; the source contact region of the application is arranged in the terminal region, and the source contact region is realized by directly etching the dielectric layer and the substrate below the dielectric layer, the process controllability is high, the steps are simple, and the etching process of the source contact region has high stability.

The invention discloses a compact Marx generator based on an impact ionization semiconductor device, and relates to the field of a pulse power technology and a power semiconductor device crossing technology. Comprising N stages of sub Marx generators which are cascaded in sequence, and each sub Marx generator comprises an impact ionization semiconductor device, a first charging isolation element, a second charging isolation element, an energy storage unit, a first ground capacitor and a second ground capacitor; for any stage of sub Marx generator, the first end of the impact ionization semiconductor device is connected with the first end of the first charging isolation element, the first end of the first ground capacitor and the first end of the energy storage unit, the second end of the first ground capacitor is grounded, the second end of the impact ionization semiconductor device is connected with the first end of the second charging isolation element, and the second end of the second charging isolation element is grounded. The second end of the second charging isolation element is connected with the second end of the energy storage unit and the first end of the second ground capacitor, and the second end of the second ground capacitor is grounded. According to the compact Marx generator, the conduction safety is improved.

An electronic device (100) applied to an electric motor includes a wiring substrate (101), an electric connection wiring (150) disposed at a substantially center of the wiring substrate and connected to a power source, a plurality of motor connection wirings (114-116) disposed at a periphery side of the wiring substrate compared to the electric connection wiring and connected to the electric motor, and a plurality of semiconductor modules (120) each including a plurality of semiconductor elements (123b, 124b) and a resin mold (125) integrally sealing the plurality of semiconductor elements. The plurality of semiconductor modules are disposed on the electric connection wiring or at a position at the periphery side of the wiring substrate compared to the electric connection wiring and at a center side of the wiring substrate compared to the motor connection wirings, and electrodes of at least a part of the plurality of semiconductor modules are mounted on the electric connection wiring.

A power conversion device includes: a first power circuit portion and a second power circuit portion each having a power semiconductor element and a plurality of conductor portions sandwiching the power semiconductor element and connected to an emitter and a collector of the power semiconductor element, respectively; and a flow path forming body accommodating the first and second power circuit portions and allowing a refrigerant to flow, the conductor portions on the emitter side of the first power circuit portion being arranged opposite to the conductor portions on the collector side of the second power circuit portion, and the conductor portions on the emitter side of the first power circuit portion and the conductor portions on the collector side of the second power circuit portion being connected by a plurality of electrically conductive fins in contact with the refrigerant.

The electrical connector (10) includes a pair of plates (20) having a first conductive plate (12) and a second conductive plate (14), each plate having a central portion (24) and two connecting lugs (32, 34). The connecting lugs of each plate extend longitudinally from opposite edges (28, 30) of the central portion and are laterally offset from each other. The first and second plates are stacked on top of each other, with the central portions overlapping and separated by a gap (36). The connecting lugs of the first and second plates on each of the opposite edge sides are laterally offset from each other. The electrical connector further includes an insulating structure comprising a sandwich of electrically insulating material accommodated in the gap (36) between the central portions of the first and second plates.

The invention discloses an intermediate layer power supply network wiring method and system. The method comprises the following steps: determining each grid of a connection layer; constructing a plurality of first connecting lines along the first direction and a plurality of second connecting lines along the second direction; combining the adjacent pins in the first direction and the second direction into a group of communicated pins in each grid; dividing each grid into a plurality of groups of grids; establishing a connection relationship between the first connecting lines and each group of grids, so that the pins in each group of grids are correspondingly connected with the first connecting lines or all the first connecting lines are distributed to the corresponding grids; establishing a connection relationship between the second connecting lines and each group of grids, so that the pins in each group of grids are correspondingly connected with the second connecting lines or all the second connecting lines are distributed to the corresponding grids; and performing wiring according to the pins or the grids connected with the first connecting lines and the second connecting lines respectively. According to the invention, the performance of the corresponding chip integration system can be improved.

The utility model relates to a VGA male socket connector in the connector technical field, which comprises a hardware shell, a plastic main body and a hardware terminal, the surface of the plastic main body is provided with hardware, one end of the hardware terminal in the horizontal direction is connected with a conductor of a cylindrical structure, one end of the hardware terminal in the vertical direction is in a flat structure, and the other end of the hardware terminal in the vertical direction is connected with the plastic main body. A groove for reducing the surface volume of the hardware terminal is formed in one end of the hardware terminal, which is of a flat structure; the limiting structure is a convex point which is bulged towards one end; according to the utility model, two salient points are respectively stamped on two sides of the hardware shell of the connector through stamping, so that when the connector is assembled with an external mechanism, the distance between the control panel and the connector can be regulated and controlled through the heights of the salient points between the mechanism panel and the connector, that is, when the mechanism panel is locked with the connector, the control panel is locked with the connector through the salient points. And the panel is pressed by the salient points after being contacted with the salient points, so that the panel cannot move forwards any more, and the distance between the panel and the connector is accurately ensured.

This utility model relates to the field of current transformer technology and discloses an environmentally friendly anti-interference current transformer, including two current transformer housings. Current transformer assemblies are disposed inside the two current transformer housings, and bases are installed on the bottom surfaces of both current transformer housings. This environmentally friendly anti-interference current transformer facilitates disassembly of the current transformer housings by setting a fixing plate on the upper surface of the housings and connecting them with bolts, while also using a snap-fit ​​mechanism between the two housings. This facilitates the recycling of the internal components. During use, the secondary winding coil is spirally and uniformly wound, reducing the distributed capacitance and inductance of the winding and enhancing the overall anti-interference capability. As the cable passes through the middle area of ​​the current transformer housing, it is guided by a limiting rope to be as close as possible to the center of the iron core, reducing the problem of uneven magnetic field distribution within the iron core caused by eccentricity and improving the anti-interference capability.

The embodiment of the utility model discloses a filter and vehicle-mounted equipment. The filter comprises a noise sensing module used for sensing a noise signal on a power line, and the noise sensing module and the power line are electrically isolated through a magnetic core assembly; and the signal generation module is electrically connected with the noise sensing module and is used for receiving and processing the noise signal, generating a compensation signal opposite to the noise signal in phase and injecting the compensation signal into the power line. Through the above mode, the embodiment of the utility model can effectively reduce electromagnetic interference, reduce the number of common-mode chokes or necessary common-mode chokes, so that the noise reduction performance of the filter is fully exerted, the hardware cost is reduced, and the size of the filter is greatly reduced.

A semiconductor device having a connection mechanism capable of reducing inductance is provided. A capacitor has a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet provided between the first connection terminal and the second connection terminal, the first connection terminal, the second insulating sheet, and the second connection terminal extending outward from the case. A semiconductor module has a terminal stack portion in which a first power terminal, a first insulating sheet, and a second power terminal are overlaid in this order. The first power terminal has a first bonding region electrically connected to the first connection terminal, the second power terminal has a second bonding region electrically connected to the second connection terminal, and the first insulating sheet has a platform portion extending in a direction from the second bonding region toward the first bonding region in plan view.

The embodiment of the application provides a kind of power module electric connection component, power module and motor controller, belong to power electronics technical field.The electric connection component of the power module includes first electric conductor and second electric conductor, and at least two connecting parts and at least one accommodating part are included on the first electric conductor, the accommodating part is located between two adjacent connecting parts, the accommodating part is recessed towards the direction away from the connecting part, one end of each connecting part is used to be electrically connected with the power chip of power module, and the other end of the connecting part is used to be electrically connected with one of the positive electrode connecting end and the negative electrode connecting end of direct current power supply part;Second electric conductor is arranged on the accommodating part, and the second electric conductor is insulated from the accommodating part, one end of the second electric conductor is used to be electrically connected with the power chip, and the other end of the second electric conductor is used to be electrically connected with the other of the positive electrode connecting end and the negative electrode connecting end.The electric connection component of the power module of the application, by arranging the second electric conductor on the accommodating part, is conducive to reducing parasitic inductance.

This application discloses a hybrid interposer and a method for forming the same. The method includes: providing a glass interposer, the glass interposer including a plurality of discrete functional regions and a cut-out region located between adjacent functional regions, the glass interposer including opposing first and second surfaces; forming a first bonding layer on the first surface of the glass interposer; providing a plurality of silicon interposers, each silicon interposer including opposing third and fourth surfaces, the third surface having a second bonding layer; bonding at least one silicon interposer to each functional region of the glass interposer, such that the second bonding layer and the first bonding layer are mixed-bonded; and forming a molding compound covering the silicon interposers on the first surface of the glass interposer, the molding compound exposing the fourth surface of the silicon interposers. This method improves the size and interconnect density of the interposer and reduces the warpage of the interposer.

The embodiment of the present application relates to a kind of high-density optoelectronic co-packaging module and its preparation method, longitudinal extension network, the high-density optoelectronic co-packaging module, comprising: bare chip integrated circuit;Multiple optical communication chips, each of the optical communication chip at least shares a semiconductor functional layer, and the semiconductor functional layer is bonded with the bare chip integrated circuit by a bonding layer, each of the optical communication chip is configured to independently / collectively emit target modulation laser under the driving of the bare chip integrated circuit.The high-density optoelectronic co-packaging architecture provided in the application can solve the bottleneck problem of existing optoelectronic co-packaging technology in high-density integration, signal integrity, thermal management and manufacturing cost, etc., and provides a high-energy efficient, high-density, high-reliability optical communication solution for next-generation AI computing and data center interconnection.

The utility model relates to the technical field of electric connector manufacturing, in particular to a high-frequency flexible flat cable (FFC) and a flat cable plug-in mounting structure. For the high-frequency FFC, a plurality of signal conductors are arranged in a concentrated manner, and the power conductors are arranged in the areas on the two sides of the high-frequency FFC. And the long insulating layer, the non-metal reinforcing plate and the signal conductor are retracted in equal length so as to form a stub removing gap in the wire port area. Thus, on one hand, electromagnetic interference between the signal conductors is reduced, adverse effects on electric signal transmission caused by a magnetic field generated in the current transmission process of the power conductors are weakened, and the transmission quality of high-frequency signals can be improved; and on the other hand, the problems of poor signal conduction contact, overlarge resistance and the like caused by the stub effect are avoided, it is ensured that the FFC high-frequency flat cable has excellent electrical performance and mechanical performance, and the poor signal transmission problems of signal reflection, attenuation, distortion, delay, mode coupling and the like are solved.

The application provides an isolated three-phase AC-DC multi-port single-stage converter, which can be used as an AC-DC multi-port access power router. The core of the converter is composed of three tap transformers, primary / secondary three-phase conversion bridges, inductors and bus capacitors, and the converter has two AC ports and two DC ports and supports bidirectional power transmission between the ports. The topology can adapt to multiple power conversion scenarios: a single-phase AC application can be adapted by deleting a group of components; the topology is converted into an isolated three-phase AC-DC bidirectional single-stage converter by removing the secondary AC inductor; and the topology becomes a unidirectional converter by replacing the secondary switch with a diode and adding a filter inductor. The conversion bridges on both sides of the converter are controlled by SPWM or SVM, and the driving pulses can be synchronized, staggered or phase-shifted, so that AC and DC voltage decoupling control can be achieved. The application adopts a single-stage conversion architecture, which is simple, efficient, cost-reducing, quantity-reducing, dynamic response-improving and reliability-improving, and the control strategy is mature and easy to realize digitally.

This utility model relates to the field of circuit equipment technology and discloses a busbar copper bus structure for improving parasitic inductance. It includes an improved busbar copper bus and a non-improved busbar copper bus. The improved busbar copper bus has a copper busbar substrate in the middle, a bent portion fixedly connected to the top of the substrate, a connecting portion fixedly connected to the top of the bent portion, and wiring extension plates fixedly connected to the lower sides of both sides of the substrate. A bent plate is fixedly connected to the other end of each wiring extension plate, and a wiring plate is fixedly connected to the other end of each bent plate. This busbar copper bus structure for improving parasitic inductance has a short distance of 17.5mm from the positive terminal of the positive busbar copper bus to the positive capacitor terminal, resulting in a shorter current path and better overall performance. It achieves the following technical effects: 1. Reduced parasitic inductance; 2. Improved dynamic response; 3. Optimized current sharing and thermal performance; 4. Suppression of electromagnetic interference (EMI); 5. Maximized capacitor efficiency.

This power conversion device is provided with: a semiconductor package having a built-in semiconductor element and having a connection terminal protruding to the outside; and a wiring substrate on which the semiconductor package is mounted, in which the terminal has a bent portion bent in a plane parallel to the wiring substrate and a terminal connection portion provided closer to the tip side than the bent portion. The wiring substrate has a first wiring portion and another second wiring portion which are provided on the surface of the substrate and which are joined to the terminal, the first wiring portion extending from a connection region to which the terminal is connected in the direction of the semiconductor package in which the terminal faces the first wiring portion, and the second wiring portion being connected to an end portion on the extension side.

One embodiment of this application provides an electro-optic modulator and an optical quantum computer with a ground electrode assembly. The electro-optic modulator with the ground electrode assembly includes a signal electrode assembly, a ground electrode assembly, and a matching resistor assembly. The signal electrode assembly is used to transmit electrical signals. The ground electrode assembly includes a first ground electrode and a second ground electrode, with the signal electrode assembly located between the first and second ground electrodes. The matching resistor assembly is connected between the signal electrode assembly and the ground electrode assembly. The first ground electrode includes a first protrusion, which is disposed close to the matching resistor assembly to reduce the area of ​​the first region where the matching resistor assembly is located. This adds a boundary to the first region where the matching resistor assembly is located, reducing the total inductance of the system, so that the equivalent impedance of the matching resistor assembly is close to the characteristic impedance of the electrode, reducing return loss, and ensuring that the energy of the electrical signal reaching the end of the transmission line is substantially absorbed by the matching resistor assembly.

The utility model discloses a low inductance capacitor, including core element and electrode lead-out subassembly, electrode lead-out subassembly includes first conductive sheet, second conductive sheet, insulating part and electric property connection band, first conductive sheet is attached to the top end face of core element, is equipped with first electrode connecting column on first conductive sheet, insulating part is attached to the end face of first conductive sheet, second conductive sheet is attached to insulating part, and electric property connection band both ends are electrically connected with second conductive sheet and core element respectively, and is equipped with second electrode connecting column on second conductive sheet. The capacitor when assembling, first conductive sheet is attached to the top end of core element, and second conductive sheet is laminated on first conductive sheet through insulating part, and is connected to the bottom end of core element through electric property connection band. So that the connecting area of first electrode connecting column and second electrode connecting column and core element increases, and the current is dispersed, and the local inductance is reduced, simultaneously, through laminated structure, the loop area is reduced, and the path inductance is reduced.

One embodiment of this application provides an electro-optic modulator with a terminating matching resistor and an optical quantum computer. The electro-optic modulator with the terminating matching resistor includes a differential electrode assembly, a ground electrode assembly, a first matching resistor, and a second matching resistor. The differential electrode assembly includes a positive signal electrode and a negative signal electrode for transmitting electrical signals. The ground electrode assembly includes a first ground electrode and a second ground electrode. The first matching resistor is connected between the positive signal electrode and the first ground electrode. The second matching resistor is connected between the negative signal electrode and the second ground electrode. Along a direction perpendicular to the first ground electrode, the first ground electrode has a first protrusion. The first protrusion is used to reduce the area of ​​a first region where the first matching resistor and the second matching resistor are located, thereby reducing the area of ​​the first region where the first matching resistor and the second matching resistor are located, and making the equivalent impedance of the first matching resistor and the second matching resistor closer to the characteristic impedance of the electrode.

The invention discloses a gallium nitride power device and a packaging method thereof. The packaging method comprises the steps of wafer pretreatment and chip packaging, wherein a copper-titanium-nickel-molybdenum metal layer is grown through electroplating / sputtering in pretreatment, a welding column is formed through etching, an air channel is reserved, and a single chip is obtained through scribing; the heat stress is relieved through the copper-titanium-nickel-molybdenum buffer layer, cavities are eliminated through the welding columns and the bottom partition design, the bonding cost is reduced through the copper connecting structure, meanwhile, the parasitic inductance can be reduced, and the heat dissipation efficiency is improved by combining the diamond cooling fins; finally, current uniformity improvement, reliability enhancement and cost optimization of gallium nitride device packaging are realized, and technical support is provided for large-scale industrial application.