901 results about "Film capacitor" patented technology

An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mu m thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer includes of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mu m for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

The invention relates to a thin film capacitor with a carrier substrate, at least two interdigitated electrodes, and a dielectric. A staggered arrangement of at least one interdigitated electrode below the dielectric with respect to an interdigitated electrode above the dielectric results in a breakdown-resistant thin film capacitor which can be manufactured in the same production process as a standard monolayer capacitor.

An excitation circuit for a flux switching motor. The circuit includes a low-value film capacitor across the DC side of a bridge rectifier. A plurality of electronic switches are arranged in an H-bridge configuration for switching current flow through an armature winding of the motor in accordance with a PWM control scheme and single-pulse control scheme controlled by a microcontroller. A start-up diode is placed across the field winding of the motor and is electronically switched out of the circuit after a startup phase of the motor has completed. The circuit implements armature energy recirculation through the field winding during startup to promote more uniform and quicker startup of the motor. The use of a film capacitor improves the power factor of the circuit, helps to eliminate the introduction of harmonics into the AC voltage source, and helps in mitigating EMI. Reverse commutation is used to bring the motor to a quick stop when it is powered off.

The invention provides a film capacitor and its manufacturing method suited to car-mount application, excellent in heat cycle tolerance and humidity resistance, and high in productivity, while maintaining low heat generation and low inductance characteristic.

A film capacitor comprises a film capacitor element 1, a bus bar 3 as metal terminal connected to electrode 2 of this film capacitor element 1, and a case 8 for containing them, in which the film capacitor element 1 and bus bar 3 are packed within the case 8 by plural layers of epoxy resin compositions 6, 7, and the plural layers of epoxy resin compositions 6, 7 are formed in layers, and are composed so that the coefficient of linear expansion may be smallest in the epoxy resin composition 7 disposed in the uppermost layer, and therefore resin cracks can be prevented at the time of heat cycle, and a film capacitor of high reliability excellent inhumidity resistance is obtained.

A method of fabricating an integrated circuit package, comprising prefabricating a film capacitor including forming a first conductive layer, depositing a dielectric layer on the first conductive layer, and depositing a second conductive layer on the dielectric layer; forming a substrate; and laminating the prefabricated film capacitor to the substrate.

A capacitor and a dynamic random access memory (DRAM) incorporating such a capacitor, includes a first layer of conducting, doped perovskite material, a second layer of another conducting, doped perovskite of opposite polarity in contact with the first layer, and a depletion layer formed at an interface between the first and second layers of conducting perovskite materials, the depletion layer being an insulating layer of the capacitor. Another capacitor and DRAM incorporating such a capacitor, includes a first electrode, a second electrode opposing the first electrode, and a thin-film of high dielectric constant perovskite material sandwiched between the first and second electrodes. At least one of the first and second electrodes is formed from substantially the same perovskite material, as the thin-film, in conducting, doped form.

Examples of the present invention include high electric energy density polymer film capacitors with high dielectric constant, low dielectric dissipation tangent, and low leakage current in a broad temperature range. More particularly, examples include a polymer film capacitor in which the dielectric layer comprise a copolymer of a first monomer (such as tetrafluoroethylene) and a second polar monomer. The second monomer component may be selected from vinylidene fluoride, trifluoroethylene or their mixtures, and optionally other monomers may be included to adjust the mechanical performance. The capacitors can be made by winding metallized films, plain films with metal foils, or hybrid construction where the films comprise the new compositions. The capacitors can be used in DC bus capacitors and energy storage capacitors in pulsed power systems.

Examples of the present invention relate generally to high electric energy density polymer film capacitors with high charge-discharge efficiency and fast discharge speed. For example, a high energy density polymer capacitor may be fabricated using a polymer blend comprising one or more high dielectric constant PVDF-based polymers (including homopolymers, copolymers and/or terpolymers) and one or more other polymer with low dielectric loss and high volume resistivity compared to the one or more PVDF-based polymers. An example film capacitor may comprise a high temperature fluoropolymer with dielectric loss lower than 0.2% and good film manufacturability. Polymer films can be stretched and orientated at least in one direction to make thinner films with improved performance. Film capacitors can be made by winding metallized films, plain films with metal foils, or using a hybrid construction where the dielectric films comprise the new compositions. Capacitors can also have a multilayer construction where the films are metallized.

In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO₂, HfO₂, (Zr_x, Hf_1-x)O₂ (0<x<1), (Zr_y, Ti_1-y)O₂ (0<y<1), (Hf_z, Ti_1-z)O₂ (O<z<l), (Zr_k, Ti_l, Hf_m)O₂ (0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.

A method of embedding thick-film capacitors includes covering capacitor layers with a protective coating prior to etching to prevent etching solutions from coming in contact with and damaging the capacitor layers.

An intermediate substrate includes a substrate core formed by a main core body portion constructed of a sheet of polymer material and having a subsidiary core accommodation portion formed therein. A ceramic subsidiary core portion, which is constructed of a ceramic sheet, is accommodated in the subsidiary core accommodation portion and is of a thickness matching that of the main core body portion. A thin film capacitor is formed on a first main surface side of a plate-like base of the core portion and includes first and second thin film electrodes separated from each other by a thin film dielectric layer so as to provide direct current isolation between the electrodes. First and second direct current isolated terminals of a first terminal array are electrically connected to the first and second thin film electrodes.

A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)<2+>(Am-1BmO3m+1)<2->, or Bi2Am-1BmO3m+3 wherein "m" is an even number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

A capacitor strap that is applied to a security tag coil or antenna to form and properly tune an EAS or an RFID security tag. The capacitor strap is a thin film capacitor formed of two metal foils in between which is a dielectric material having ends that are electrically coupled to different points of a security tag coil or antenna. The capacitor strap may include an RFID integrated circuit, either in series or in parallel with the capacitor, which is then applied to security tag coil at a particular location to tune the tag to a predetermined frequency.

The invention provides an online monitoring method for a DC-link capacitor of a three-phase system. The method comprises that voltage of the DC-link capacitor is collected, and a voltage drop curve of the DC-link capacitor is obtained; three-phase output current is collected, and capacitive current is reconstructed according to the three-phase output current; and the capacitance (C) and equivalent serial resistance (ESR) of the DC-link capacitor are obtained according to the voltage drop curve and the capacitive current of the DC-link capacitor. The voltage drop curve and the three-phase output current of the DC-link capacitor as well as control signals of a semiconductor switch are monitored in the process that power equipment as a three-phase frequency converter is switched off, so that the C and ESR of the DC-link capacitor are calculated accurately, and non-invasive online monitoring for the DC-link capacitor of the AC/DC/AC system is realized. The method can be applied to online monitoring for an aluminum electrolytic capacitor, other capacitors as a film capacitor as well as other three-phase systems including a wind power converter, a photovoltaic AC/DC/AC system and a three-phase aviation power system.

Disclosed is a thin film capacitor which can improve the uniformity of the capacitance while keeping a high capacitance. The thin film capacitor has a lower electrode serving as a trench forming layer where a trench pattern is to be formed, a dielectric film so provided as to cover the lower electrode, and an upper electrode laminated in order on the entire top surface of a substrate. The trench pattern is configured to have a first pattern and a second pattern separate from the first pattern. The first pattern has a plurality of protrusions provided upright at predetermined intervals, and the second pattern has a plurality of recesses provided at predetermined intervals. Trenches are each defined by the outer wall of each protrusion and the inner wall of each recess.

The present invention is to provide a metallized film capacitor having a compact size, a large capacitance and a low inductance whereas number of parts is reduced. The metallized film capacitor comprises: a plurality of capacitor elements (1) provided with metallized contact electrodes (2) on both ends in the width direction; a bus-bar (3) to connect each of a plurality of electrodes (2) on one end; and a capacitor case (5) to house a plurality of capacitor elements (1), wherein a plurality of capacitor elements (1) are arranged in the capacitor case such that one side of electrodes (2) faces the opening surface of capacitor case (1) and each electrode (2) of one of both ends of each capacitor element (1) are positioned generally coplanarly.

There is provided a coating composition comprising (A) a thermoplastic non-fluorine-containing polymer, (B) inorganic ferroelectric particles, (C) an affinity-improving agent comprising at least one of a coupling agent, a surfactant and an epoxy group-containing compound, and (D) a solvent, and there is provided a film formed using the coating composition which has highly dielectric property and low dielectric loss, can be made thin, is excellent in winding property (flexibility) and is suitable as a highly dielectric film for a film capacitor.

A capacitor capable of being incorporated into a packaging substrate, characterized in that the capacitor comprises a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

The invention relates to a potting wax composition for metalized film capacitors, which comprises petroleum wax, synthetic wax, malthene and a tackiffer. The invention provides a potting wax composition for metalized film capacitors with suitable properties, and the defect of prior art that no special product exists in the field is made up. The invention is suitable for the potting of low voltage self-recover metalized polypropylene film power capacitors, CBB series capacitors and other metalized film capacitors. The invention has the advantages of good electrical properties, good moistureproof property, good fluidity, good heat resistant, good cold tolerance, suitable physical and chemical properties and processing property, innocuity, no corrosion, no impurity, and other advantages.

Start capacitor assemblies and methods for operating electric motors are described. In one example, a start capacitor assembly for connection to an electric motor includes a film capacitor and a resistor. The film capacitor has a first terminal and a second terminal. The resistor is coupled to the film capacitor in parallel with the first terminal and the second terminal of the film capacitor

A multi-layered unit according to the present invention includes a support substrate formed of a material which has conductivity and on which a dielectric material containing a bismuth layer structured compound can be epitaxially grown, at least the surface thereof being oriented in the [001] direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the [001] direction. Since the thus constituted multi-layered unit includes the dielectric layer containing a bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic.

An embedded passive structure, its method of formation, and its intergration onto a substrate during fabrication are disclosed, In one embodiment the embedded passive structure is a thin film capacitor (TFC) formed using a thin film laminate that has been mounted onto a substrate. The TFC's capacitor dielectric and/or lower electrode layers are patterned in such a way as to reduce damage and improve cycle time. In one embodiment, the capacitor dielectric has a high dielectric constant and the substrate is an organic packaging substrate.

Ferroelectric PbZrxT1-xO3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350° C., followed by thermal treatment at 620° C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal beta-diketonate adducts of the formula M(beta-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

A film capacitor element including a base dielectric film layer 12, a vapor-deposition metal film layer 14 formed on the base dielectric film layer 12 and consisting of a first film portion 20 and a second film portion 22 that are spaced apart from each other by a margin portion 18, and a dielectric covering film layer 16 which is formed integrally on the second film portion 22 by vapor-deposition polymerization or coating and which has a covering portion 30 which fills the margin portion 18 and covers an entire area of an end face of the second film portion 22 on the side of the margin portion 18. The first film portion 20 including a non-covered portion 34 which is not covered by the dielectric covering film layer 16.

The present invention is RE containing Zn-Al alloy wire and its preparation process, and the RE containing Zn-Al alloy is used as the end spraying material for metallized film capacitor. The RE containing Zn-Al alloy contains Al 4-16 wt%, RE mixture with light RE as main components 0.01-0.12 wt%, and impurity not more than 0.025 wt% except Zn. The preparation process includes pouring Al molt into Zn molt, raising the temperature for melting while stirring, adding intermediate RE alloy, and smelting while stirring to obtain the RE containing Zn-Al alloy. The RE containing Zn-Al alloy wire of the RE containing Zn-Al alloy has compact structure, improved machining performance and use performance, and improved welding condition.

A capacitor comprises a substrate layer, a first electrode layer disposed on the substrate layer, and a first dielectric layer disposed on the electrode layer. The dielectric layer comprises inorganic ferroelectric or antiferroelectric particles, and a polymeric material having an elongation less than or equal to about 5 percent.

A metallized plastic film is formed by winding two sheets of film vapor-deposited with an electrode metal as one group and a film capacitor, comprising; three individual splittings of electrode metal by predetermined width and length and then adjoining of splitting parts. Accordingly, self-heating of the film capacitor can be restrained and a capacitance reduction rate caused by the operation of the fuse parts can be reduced.

A Terahertz wave radiation source belongs to the technical field of Terahertz wave. The basic structure comprises a microwave source, a connecting wave guide and a Terahertz wave generator. The Terahertz wave generator works in a vacuum state in a tube, and mainly comprises a cathode for emitting electrons, a focusing electrode, a microwave input wave guide, a microwave cavity, an electron beam drifting and bunching pipe, an extraction electrode, a thick film capacitor, a thin film radiating antenna, an electron beam focusing magnet and a pole shoe. The invention has a simple structure, the output power and efficiency greatly exceeding that of the prior Terahertz wave generator, is suitable for large-scaled production, and has wide application prospect in the fields, such as material detection, human body imaging, component analysis, and the like.

The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.