2031 results about "Film capacitor" patented technology

An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mu m thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer includes of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mu m for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

The invention relates to a thin film capacitor with a carrier substrate, at least two interdigitated electrodes, and a dielectric. A staggered arrangement of at least one interdigitated electrode below the dielectric with respect to an interdigitated electrode above the dielectric results in a breakdown-resistant thin film capacitor which can be manufactured in the same production process as a standard monolayer capacitor.

An excitation circuit for a flux switching motor. The circuit includes a low-value film capacitor across the DC side of a bridge rectifier. A plurality of electronic switches are arranged in an H-bridge configuration for switching current flow through an armature winding of the motor in accordance with a PWM control scheme and single-pulse control scheme controlled by a microcontroller. A start-up diode is placed across the field winding of the motor and is electronically switched out of the circuit after a startup phase of the motor has completed. The circuit implements armature energy recirculation through the field winding during startup to promote more uniform and quicker startup of the motor. The use of a film capacitor improves the power factor of the circuit, helps to eliminate the introduction of harmonics into the AC voltage source, and helps in mitigating EMI. Reverse commutation is used to bring the motor to a quick stop when it is powered off.

A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

The invention provides a film capacitor and its manufacturing method suited to car-mount application, excellent in heat cycle tolerance and humidity resistance, and high in productivity, while maintaining low heat generation and low inductance characteristic.

A film capacitor comprises a film capacitor element 1, a bus bar 3 as metal terminal connected to electrode 2 of this film capacitor element 1, and a case 8 for containing them, in which the film capacitor element 1 and bus bar 3 are packed within the case 8 by plural layers of epoxy resin compositions 6, 7, and the plural layers of epoxy resin compositions 6, 7 are formed in layers, and are composed so that the coefficient of linear expansion may be smallest in the epoxy resin composition 7 disposed in the uppermost layer, and therefore resin cracks can be prevented at the time of heat cycle, and a film capacitor of high reliability excellent inhumidity resistance is obtained.

A method of fabricating an integrated circuit package, comprising prefabricating a film capacitor including forming a first conductive layer, depositing a dielectric layer on the first conductive layer, and depositing a second conductive layer on the dielectric layer; forming a substrate; and laminating the prefabricated film capacitor to the substrate.

A capacitor and a dynamic random access memory (DRAM) incorporating such a capacitor, includes a first layer of conducting, doped perovskite material, a second layer of another conducting, doped perovskite of opposite polarity in contact with the first layer, and a depletion layer formed at an interface between the first and second layers of conducting perovskite materials, the depletion layer being an insulating layer of the capacitor. Another capacitor and DRAM incorporating such a capacitor, includes a first electrode, a second electrode opposing the first electrode, and a thin-film of high dielectric constant perovskite material sandwiched between the first and second electrodes. At least one of the first and second electrodes is formed from substantially the same perovskite material, as the thin-film, in conducting, doped form.

Examples of the present invention include high electric energy density polymer film capacitors with high dielectric constant, low dielectric dissipation tangent, and low leakage current in a broad temperature range. More particularly, examples include a polymer film capacitor in which the dielectric layer comprise a copolymer of a first monomer (such as tetrafluoroethylene) and a second polar monomer. The second monomer component may be selected from vinylidene fluoride, trifluoroethylene or their mixtures, and optionally other monomers may be included to adjust the mechanical performance. The capacitors can be made by winding metallized films, plain films with metal foils, or hybrid construction where the films comprise the new compositions. The capacitors can be used in DC bus capacitors and energy storage capacitors in pulsed power systems.

Examples of the present invention relate generally to high electric energy density polymer film capacitors with high charge-discharge efficiency and fast discharge speed. For example, a high energy density polymer capacitor may be fabricated using a polymer blend comprising one or more high dielectric constant PVDF-based polymers (including homopolymers, copolymers and/or terpolymers) and one or more other polymer with low dielectric loss and high volume resistivity compared to the one or more PVDF-based polymers. An example film capacitor may comprise a high temperature fluoropolymer with dielectric loss lower than 0.2% and good film manufacturability. Polymer films can be stretched and orientated at least in one direction to make thinner films with improved performance. Film capacitors can be made by winding metallized films, plain films with metal foils, or using a hybrid construction where the dielectric films comprise the new compositions. Capacitors can also have a multilayer construction where the films are metallized.

In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO₂, HfO₂, (Zr_x, Hf_1-x)O₂ (0<x<1), (Zr_y, Ti_1-y)O₂ (0<y<1), (Hf_z, Ti_1-z)O₂ (O<z<l), (Zr_k, Ti_l, Hf_m)O₂ (0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.

A method of embedding thick-film capacitors includes covering capacitor layers with a protective coating prior to etching to prevent etching solutions from coming in contact with and damaging the capacitor layers.

An intermediate substrate includes a substrate core formed by a main core body portion constructed of a sheet of polymer material and having a subsidiary core accommodation portion formed therein. A ceramic subsidiary core portion, which is constructed of a ceramic sheet, is accommodated in the subsidiary core accommodation portion and is of a thickness matching that of the main core body portion. A thin film capacitor is formed on a first main surface side of a plate-like base of the core portion and includes first and second thin film electrodes separated from each other by a thin film dielectric layer so as to provide direct current isolation between the electrodes. First and second direct current isolated terminals of a first terminal array are electrically connected to the first and second thin film electrodes.

A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)<2+>(Am-1BmO3m+1)<2->, or Bi2Am-1BmO3m+3 wherein "m" is an even number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

A capacitor strap that is applied to a security tag coil or antenna to form and properly tune an EAS or an RFID security tag. The capacitor strap is a thin film capacitor formed of two metal foils in between which is a dielectric material having ends that are electrically coupled to different points of a security tag coil or antenna. The capacitor strap may include an RFID integrated circuit, either in series or in parallel with the capacitor, which is then applied to security tag coil at a particular location to tune the tag to a predetermined frequency.

The invention provides an online monitoring method for a DC-link capacitor of a three-phase system. The method comprises that voltage of the DC-link capacitor is collected, and a voltage drop curve of the DC-link capacitor is obtained; three-phase output current is collected, and capacitive current is reconstructed according to the three-phase output current; and the capacitance (C) and equivalent serial resistance (ESR) of the DC-link capacitor are obtained according to the voltage drop curve and the capacitive current of the DC-link capacitor. The voltage drop curve and the three-phase output current of the DC-link capacitor as well as control signals of a semiconductor switch are monitored in the process that power equipment as a three-phase frequency converter is switched off, so that the C and ESR of the DC-link capacitor are calculated accurately, and non-invasive online monitoring for the DC-link capacitor of the AC/DC/AC system is realized. The method can be applied to online monitoring for an aluminum electrolytic capacitor, other capacitors as a film capacitor as well as other three-phase systems including a wind power converter, a photovoltaic AC/DC/AC system and a three-phase aviation power system.