62results about How to "Reduce peak voltage" patented technology

For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

A voltage boost power converter circuit, having an input inductor, active switch, and a transformer having primary, secondary and auxiliary windings. A clamping capacitor and a first passive switch are in series across the primary winding. The auxiliary winding and a second passive switch are in series, connected to the node between the clamping capacitor and first passive switch. The active switch is connected between ground the primary winding. A bulk capacitor forms a series loop including the active switch and primary winding. The method efficiently resets a the transformer, by transferring power to a load through the primary winding, and discharging a clamping capacitor through a separate inductively linked winding of the transformer during an ON state; and clamping the active switch voltage with the clamping capacitor, charging the clamping capacitor with a leakage inductance of the transformer, and charging the bulk capacitor during an OFF state.

Switching of parallel capacitors in an HID bi-level lighting control system is accomplished through use of transient voltage suppression across an electronic relay for discharge of residual charge from a switched capacitor when combined peak voltage exceeds clamping voltage, thereby allowing maximum switch voltage rating to be lower than is possible through the use of conventional switching methods and circuitry. The invention contemplates method and apparatus permitting capacitive switching at voltage levels higher than are possible in conventional capacitive switching arrangements including capacitive switching arrangements used in lighting control systems.

A bi-phase modulator for Ultra Wideband (UWB) waveforms uses a symmetrical transformation device and a selector device to produce bi-phase modulated UWB waveforms in response to an information signal. The symmetrical transformation device receives an input UWB waveform and produces equal but opposite polarity output waveforms. The selector device determines whether an inverted or non-inverted UWB waveform is output in response to the information signal.

The invention provides an electromagnetic resonance control circuit, an electromagnetic heating device and a method for controlling a transistor. The electromagnetic resonance control circuit comprises a power module, a resonance circuit, the transistor and a controller, the resonance circuit is connected to the power module, the transistor is arranged between the resonance circuit and the ground, and used for executing the power-on or power-off operation according to pulse width modulation signals sent by the controller to control the work state of the resonance circuit, and the controller is connected to the power module and the control end of the transistor, and used for adjusting the duty ratio of the pulse width modulation signals sent to the transistor according to the change condition of voltages output to the resonance circuit by the power module to control the power-on time of the transistor. According to the technical scheme, the power-on time of the transistor can be controlled according to the voltages output to the resonance circuit, power output is increased in a low-voltage area, power output is reduced in a high-voltage area, the peak voltage and the peak current of the transistor are reduced under the condition of identical power, and therefore the transistor is effectively protected.

Depth of a termination p base region provided in a termination portion of an active region close to an edge termination structure portion is more than depth of a p-type base region provided inside the termination p base region. An n-type high-concentration region is provided from one main surface of the semiconductor substrate in the entire surface layer of one surface of a semiconductor substrate within a depth of 20 μm or less below the bottom of the termination p base region. Ratio of the impurity concentration n₁ of the n-type high-concentration region (1c) to the impurity concentration n₂ of an n⁻ drift region satisfies 1.0<n₁/n₂≦5.0. Reverse leakage current when operation temperature of an element is high can be reduced and trade-off between on-state voltage and switching loss can be improved. Rising peak voltage of collector voltage when a semiconductor device is off is reduced.

The invention relates to a producer device for preparing ozone, which comprises of high voltage electrode, tubular dielectric body, earth electrode, left and right insulation end cap, and middle insulation loop; inside or outside the two tubular dielectric bodies being separately equipped with the coaxial high voltage electrode and earth electrode, the two high voltage electrodes connecting separately to the two high voltage carry-in terminal of the electrical source, the two high voltage electrode and the two tubular dielectric bodies being separated by insulation loop made up of insulation material, and the insulation loop being equipped with locator cards, for fixing tubular dielectric body and discharging gap exhaust passage; the earth electrode being outside of the tubular dielectric body while the high voltage electrode is inside of the tubular dielectric body, vice versa; the discharging gap being controlled between 0.2-5.0mm by locator card slot in insulation loop, and being uniform. The invention is characterized in that it decreases the device manufacture difficulty and production cost, the electrode is easy to cool down, and the device is compact.

An ESD protection device includes opposed electrodes in a ceramic base material and a discharge auxiliary electrode in contact with each of the opposed electrodes which is arranged so as to provide a bridge from the opposed electrode on one side to the opposed electrode on the other side, the discharge auxiliary electrode includes metallic particles, semiconductor particles, and a vitreous material, and bonding is provided through the vitreous material between the metallic particles, between the semiconductor particles, and between the metallic particles and the semiconductor particles. The metallic particles have an average particle diameter X of about 1.0 μm or more, and the relationship between the thickness Y of the discharge auxiliary electrode and the average particle diameter X of the metallic particles satisfies about 0.5≦Y/X≦ about 3.

An ESD suppressor is configured including first and second discharge electrodes arranged as separated from each other, and a discharge inducing portion kept in contact with the first and second discharge electrodes so as to connect mutually opposed portions of the first and second discharge electrodes to each other. The discharge inducing portion contains metal particles. The first and second discharge electrodes are located on the coil side with respect to the discharge inducing portion when viewed in a stack direction of a plurality of insulator layers. An element body has a cavity portion located so as to cover the whole of the discharge inducing portion when viewed in the stack direction from the coil side. The cavity portion is in contact with the mutually opposed portions of the first and second discharge electrodes and with the discharge inducing portion.

A circuit can include a transistor coupled to a resistor or a diode. In an embodiment, the circuit can include a pair of transistors arranged in a cascode configuration, and each of the transistors can have a corresponding component connected in parallel. In a particular embodiment, the components can be resistors, and in another particular, embodiment, the components can be diodes. The circuit can have less on-state resistance as compared to a circuit in which only one of the components is used, and reduces the off-state voltage on the gate of a high-side transistor. An integrated circuit can include a high electron mobility transistor structure and a resistor, a diode, a pair of resistors, or a pair of diodes.

A computer room heat-pipe air conditioning system with an emergency cooling control method. The system comprises a phase-change energy storage module, a phase-change material packaging body, a condenser housing, a condenser, a cold releasing pump, evaporators, evaporation fans, four three-way valves, a cooling unit, standby power generators and storage batteries. The three-way valves are opened and closed based on a preset heat-pipe cooling criteria in combination with phase-change energy storage technology.

An electrical apparatus for limiting the peak voltage across a recttifying member (23) of a current valve arranged in a circuit having a substantial inductance (24) and having at least one controllable semiconductor device (22) and at least one said rectifying member (23) connected in anti-parallel therewith when the rectifying member is turning off, comprises means (28, 29) adapted to control the semiconductor device so as to increase the conductivity thereof during turning off of the rectifying member.

The invention provides a DC/DC converter capable of automatically adjusting the minimum fixed output current in a semi-control state, wherein the characteristic that the cathode voltage of an integrated circuit TL431 can jump is utilized, and the DC/DC converter can achieve a new function. In a multi-output semi-control secondary loop of the DC/DC converter, the change in the voltage of a divider resistor is monitored, so that the cathode voltage of the integrated circuit TL431 is changed, the working state of fixed power resistors and PNP triodes, which are connected between positive outputs and negative outputs in series, is changed, and the requirement that the minimum fixed output current in the semi-control state can be adjusted automatically is met. The DC/DC converter capable of automatically adjusting the minimum fixed output current in the semi-control state overcomes the shortcoming that in the prior art, only one or two aspects instead of all the aspects of precision, stability, complexity, efficiency, user-friendliness and the like can be taken into account in an output voltage instability solution for the multi-output semi-control secondary loop of the DC/DC converter, and all the aspects are integrated while the requirements that the size be small and technical indexes be met are met.

This invention relates to current-fed resonant inverters for electrical power applications to change direct current (DC) into alternating current (AC). One application of the invention is to power supplies for inductive power transfer (IPT) systems. There is provided a resonant inverter including an input for supply of current from a DC power source, a resonant circuit including two coupled inductive elements and a tuning capacitance, the inductive elements being arranged to split current from the power source; a first switching means comprising two switching devices operable in substantially opposite phase to alternately switch current from the power source into the inductive elements; and a second switching means to selectively switch one or more control capacitances into or out of the resonant circuit dependent on a power factor of the resonant circuit.

The invention relates to the technical field of diodes, especially a resonant tunneling diode based on an InGaAs/AlAs material. InGaAs with different In components is prepared on an InP substrate layer, and a graded transmission layer structure is formed. The diode can reduce the transit time of electrons in a diode, and improves the working speed. The diode employs InxGal-xAs (x=0.8) as a potential well material, and can reduce a start voltage and a peak voltage. Non-doped InGaAs layers are respectively deposited between a transmission layer and a first barrier layer, and between a collection region and a second barrier layer, and an isolation region is formed, thereby preventing foreign matters in a heavily-doped region from diffusing towards a DBS region. According to the invention, an apparent negative differential resistance phenomenon can be observed under the room temperature, and the diode is very high in frequency and working speed. The diode can be applied to a high-speed digital circuit, a high-frequency oscillation device and the assembly of a high-quality display more effectively.

The invention relates to the technical field of diodes, especially a resonant tunneling diode based on an InGaAs/AlAs material. An In0.53AlxGa0.47-xAs/InP composite current collection structure is employed in a composite current collection region, thereby reducing the transit time of electrons in the diode, and improving the working speed. Strain InxGal-xAs is employed as a potential well material, and the In0.53AlyGa0.47-yAs serves as a transmission layer, thereby reducing the start voltage and the peak voltage. Non-doped InAlGaAs and InGaAs layers are respectively deposited between the transmission layer and a first barrier layer, and between the composite current collection region and a second barrier layer, and an isolation region is formed, thereby preventing foreign matters in a heavily-doped region from diffusing towards a DBS region. The diode can be applied to a high-speed digital circuit, a high-frequency oscillation device and the assembly of a high-quality display more effectively.

A pair of first electrodes (2) arranged on the upper surface of an alumina substrate (1) are constituted to have a large film thickness by using a material having a small specific resistance. A second electrode (3), which is arranged between the pair of first electrodes (2) and is composed of a high melting point material, is arranged to have a small film thickness. A gap (4) is formed on the second electrode (3). Heat and damages of the first electrode (2) constituting an extraction electrode are reduced, and the gap on the second electrode (3) is highly accurately formed to have a narrow gap width. Thus, a static electricity resistant component, which has resistance characteristics against repeated application of static electricity, a low peak voltage applied to the component and stable electrostatic discharge suppressing characteristics, is provided.