5results about How to "Reduce peak" patented technology

This invention discloses a composite-terminated vertical Schottky diode combining a BaTiO3 / Si3N4 dielectric field plate and ion implantation. A composite dielectric layer composed of Si3N4 and BaTiO3 layers is used, with an anode field plate disposed on the composite dielectric layer. Fluorine ions are implanted into a drift layer below the anode to form a fluorine implantation region. Part of the fluorine implantation region is located below the anode, and another part is located below the composite dielectric layer, forming a composite termination. This composite termination structure effectively modulates the electric field distribution on the device surface and within the device bulk, ultimately effectively reducing the electric field strength at the anode edge and achieving a higher breakdown voltage. This provides an effective solution for the termination design of high-performance high-voltage Schottky diode power devices.

The application relates to a medical image processing method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring a sample artifact image set; each sample artifact image in the sample artifact image set is obtained by performing magnetic resonance scanning on each scanning sample by using an echo imaging sequence; a template magnetic resonance image corresponding to each scanning sample is determined by using a reference echo scanning method; a neural network to be trained is trained according to the sample artifact image corresponding to each scanning sample and the corresponding template magnetic resonance image, so as to obtain a trained image artifact elimination model; and the image artifact elimination model is used for performing peak correction on a magnetic resonance image to be eliminated. The method can improve the artifact removal efficiency of the magnetic resonance image.

This invention relates to the field of integrated circuit technology, specifically to a Class F series resonant voltage-controlled oscillator, which consists of four identical unit circuits connected end to end to form a closed loop structure. Each unit circuit includes an active circuit and an LC series resonant network. The LC series resonant network includes a main resonant cavity and an auxiliary resonant cavity. This invention achieves a systematic improvement in phase noise performance through the series resonant topology and harmonic shaping mechanism.

The invention discloses a micro light emitting diode dynamic control system, control method and control device based on a multi-core heterogeneous chip. A task management and light field analysis unit TMU writes an analyzed light field descriptor set into an on-chip shared memory and sends a doorbell signal to a neural mimicry computing cluster NPU; a neural mimicry computing cluster NPU receives the light field descriptor from a task management and light field analysis unit TMU, reads historical data from a distributed shared memory, writes a processing result into the distributed shared memory, and triggers a high-precision driving computing cluster HPU and a distributed pixel driving network DPS; the high-precision driving calculation cluster HPU receives the instruction and the data, reads accurate parameters from the distributed shared memory and issues a final driving micro instruction to the distributed pixel driving network DPS; and the distributed pixel driving network DPS is used for receiving microinstructions and local parameters from the high-precision driving calculation cluster HPU. And inherent contradictions among power consumption, bandwidth, service life and display quality are solved.

The application provides a super-high-voltage junction field-effect tube device with high lightning surge tolerance and a manufacturing method thereof. The super-high-voltage junction field-effect tube device comprises a substrate, the substrate has a first deep well, a second deep well, a first high-doped well and a second high-doped well, the second high-doped well is in communication with the first deep well and the second deep well; the substrate has a one-well connected with the first high-doped well, the one-well has a first body region formed therein; the substrate has a two-well connected with the second high-doped well, the two-well has a second body region formed therein; the first deep well has a source electrode formed therein, the second deep well has a drain electrode formed therein, the second deep well has an isolation layer formed thereon, and the isolation layer has a gate electrode formed thereon; the first body region is in communication with the gate electrode through a contact hole, the source electrode and the drain electrode each has a contact hole, and the second body region has no contact hole. The application removes the contact hole of the second body region, adds a high-doped well, increases the length of the lightning current path, and improves the lightning surge performance.