15179 results about "Ozone" patented technology

Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a process cycle, containing an intermediate treatment step and a predetermined number of ALD cycles, is repeated until the deposited material has a desired thickness. The chamber and substrates may be exposed to an inert gas, an oxidizing gas, a nitriding gas, a reducing gas or plasmas thereof during the treatment processes. In some examples, the treatment gas contains ozone, water, ammonia, nitrogen, argon or hydrogen. In one example, a process for depositing a hafnium oxide material within a batch process chamber includes a pretreatment step, an intermediate step during an ALD process and a post-treatment step.

An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a pretreatment process, exposing the substrates sequentially to a precursor and a second oxidizing gas during an ALD cycle and repeating the ALD cycle to form a material on the substrates. In a preferred example, a hafnium precursor is used during the ALD process to form a hafnium-containing material, such as hafnium oxide. In one example, the first and second oxidizing gases are the same oxidizing gases. In a preferred example, the first and second oxidizing gases are different oxidizing gases, such that the pretreatment process contains ozone and the ALD process contains water vapor.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.

The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.

One ozone concentrating chamber is provided therein with a part of a cooling temperature range where ozone can be selectively condensed or an oxygen gas can be selectively removed by transmission from an ozonized oxygen gas, and a part of a temperature range where condensed ozone can be vaporized, and condensed ozone is vaporized by moving condensed ozone with flow of a fluid or by gravitation to the part where condensed ozone can be vaporized, whereby the ozonized oxygen gas can be increased in concentration. Such a constitution is provided that a particle material 13 for condensation and vaporization filled in the ozone concentrating chambers 11 and 12 has a spherical shape of a special shape with multifaceted planes on side surfaces, or an oxygen transmission membrane 130 capable of selectively transmitting an oxygen gas in an ozone gas is provided.

Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where the mandrels are formed of amorphous carbon and the spacer material is silicon oxide, the silicon oxide is first deposited by a plasma enhanced deposition process and then by a thermal chemical vapor deposition process. Oxygen gas and plasma-enhanced tetraethylorthosilicate (TEOS) are used as reactants in the plasma enhanced process, while ozone and TEOS are used as reactants in the thermal chemical vapor deposition process. The oxygen gas is less reactive with the amorphous carbon than ozone, thereby minimizing deformation of the mandrels caused by oxidation of the amorphous carbon.

Electrically conductive noble metal oxide films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Re, Ru, Os and Ir oxides are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor and an oxygen source. The noble metal precursor is preferably a betadiketonate compound and the oxygen source is preferably ozone or oxygen plasma. The deposition temperature may be less than about 200° C.

The present invention is an industrial waste water microwave electrodeless ultraviolet photocatalysis-dual membrane separation coupling treatment device, the device mainly consists of a reactor (1), a membrane separation system (2), a microwave electrodeless ultraviolet light source system (4), an aeration system, and an ozone tail gas decomposition device (7) connected to the reactor, and an inlet and outlet water system, wherein: the upper and lower parts of the reactor are respectively the reaction zone and the aeration zone, which are separated by a water distribution plate (5); the membrane separation system The microwave electrodeless ultraviolet light source system is located in the reaction zone and is separated by a corrugated partition (3); the aeration system is composed of a microporous aeration head (6) and a blower (8), and the microporous aeration head is located in the aeration At the bottom of the zone, the blower sends air to the aeration zone through the air duct. The invention has the characteristics of high reaction rate, complete degradation of organic matter, long-term operation and the like, and has strong operability and high safety. It is suitable for the treatment of refractory organic industrial wastewater, and it is also suitable for sterilization and disinfection in the field of water supply.

Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where the mandrels are formed of amorphous carbon and the spacer material is silicon oxide, the silicon oxide is first deposited by a plasma enhanced deposition process and then by a thermal chemical vapor deposition process. Oxygen gas and plasma-enhanced tetraethylorthosilicate (TEOS) are used as reactants in the plasma enhanced process, while ozone and TEOS are used as reactants in the thermal chemical vapor deposition process. The oxygen gas is less reactive with the amorphous carbon than ozone, thereby minimizing deformation of the mandrels caused by oxidation of the amorphous carbon.

An ozone generator for generating ozone by applying a specified process to oxygen by discharge includes a first raw material gas supply unit for supplying the oxygen as a first raw material gas, and a second raw material gas supply unit for supplying an oxide compound gas as a second raw material gas, in which, by excited light, excited and generated by a discharge in the oxygen and the oxide compound gas, the oxide compound gas is dissociated, or the oxide compound gas is excited accelerating dissociation of the oxygen, and ozone is generated. In this way, ozone generation efficiency is raised.

The present invention provides a method and apparatus for sterilizing articles using an ozone-containing gas, where condensation of water from the sterilization atmosphere during the sterilization process is substantially prevented. The inventive sterilization method includes providing a sterilization chamber and placing an article into the sterilization chamber. The sterilization chamber is sealed prior to equalizing the temperature of the article and the atmosphere in the sterilization chamber. A vacuum is applied to achieve a preselected vacuum pressure in the sterilization chamber. Once the vacuum pressure is set, water vapour is supplied to the sterilization chamber. Ozone-containing gas is then supplied to the sterilization chamber and the sterilization chamber remains sealed for a preselected treatment period, where the sterilization chamber remains sealed throughout the whole process. Finally, vacuum in the sterilization chamber is released.

A combustion analyzer apparatus and method for combustion analysing a sample, the analyzer comprising a combustion chamber (82) for receiving a sample for combustion therein to form combustion products, and a fluid supply apparatus for supplying fluid(s) into the chamber. The fluid supply apparatus (130-140) comprises a nitrogen oxides (NO_x) generating apparatus (140,190,210,240) and is arranged to supply NO_x into the combustion chamber. A yield of sulphur dioxide in the combustion products may thereby be improved. The NO_x generating apparatus may be operated at a raised working temperature. The NO_x generating apparatus may be provided by an ozonator with a supply of nitrogen and oxygen. A Venturi tube arrangement (246) may draw the generated NO_x into a (carrier or oxygen) gas line to the combustion chamber. Ozone may be supplied to the combustion products to convert nitrogen monoxide therein to nitrogen dioxide. The NO_x and ozone may be supplied by a single device (210,240).

An ozone gas concentration measurement method that can easily measure the concentration of ozone gas. A process gas containing ozone gas is produced from a raw gas containing oxygen gas. The number of moles of gas molecules contained in the process gas is measured. The concentration of the ozone gas contained in the process gas is calculated based on the number of moles of gas molecules contained in the process gas.

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

The invention discloses a reactor for catalytically oxidizing wastewater through ozone and an application method thereof. The reactor comprises a reaction chamber, a water inlet, a water outlet, a gasoutlet and a circulating water outlet, wherein a separation plate in the reaction chamber is used for separating the lower part of the reaction chamber into a jet flow reaction chamber and a tower type reaction chamber; the jet flow reaction chamber is internally provided with a first catalysis bed layer and an ejector; the circulating water outlet is connected with a working fluid inlet of the ejector; the gas outlet is connected with a sucked liquid inlet of the ejector through a gas circulating pipe; the water inlet is arranged at the bottom of the jet flow reaction chamber; the tower typereaction chamber is internally provided with a tower plate and a second catalysis bed layer; the water outlet is arranged at the bottom of the tower type reaction chamber; a gas inlet is communicatedwith the lower side of the tower plate and the gas circulating pipe; the gas circulating pipe is connected with a tail gas outlet. The reactor has the advantages of high mass transfer efficiency, rapid reaction speed, high ozone utilization rate, high COD (Chemical Oxygen Demand) removal rate and the like.

Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises an oxidation unit to which an oxygen-containing gas such as ozone may be added, with input of energy (e.g., thermal, radio frequency, electrical, microwave, etc.), to effect oxidation of oxidizable species in the effluent, such as halocompounds (e.g., chlorofluorocarbons, perfluorocarbons), CO, NF3, nitrogen oxides, and sulfur oxides). The effluent gas stream treatment system may include a wet scrubber associated with the oxygen-containing gas source, so that the gas stream is contacted with the oxygen-containing gas during the wet scrubbing operation, to enhance removal of oxidizable species in the gas stream during treatment.