Method of depositing silicon oxide films

Abstract

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority under 35 U.S.C. §119(a) to and the benefit of Korean Patent Application No. 10-2007-0080581 filed in the Korean Intellectual Property Office on Aug. 10, 2007, the entire disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to deposition of thin films. More particularly, the present invention relates to a method of depositing silicon oxide films.[0004]2. Description of the Related Art[0005]In depositing silicon oxide films for semiconductor devices, chemical vapor deposition (CVD) methods, such as low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), and plasma-enhanced CVD (PECVD), have been widely used. In LPCVD or APCVD, two or more source gases can be simultaneously supplied and deposited at a relatively high temperature (for example, about 500° C. to about 850° C.) to form a silicon oxide film over a ...

AI Technical Summary

Benefits of technology

"The patent describes methods and apparatus for depositing silicon oxide films over a substrate. The methods involve supplying pulses of silicon source gas and an oxygen-containing gas into a reactor where the substrate is loaded. The resulting silicon oxide film has a specific atomic ratio of silicon to oxygen and a refractive index. The methods also involve supplying a vapor phase silicon precursor and purging it from the substrate before depositing a thin film using ozone gas. The technical effects of the patent include improved deposition of silicon oxide films with controlled properties and a simplified process for forming thin films over a substrate."

Problems solved by technology

Silicon oxide films deposited by a high temperature CVD process, such as LPCVD or APCVD, tend to have defects, such as interface oxidation and dopant diffusion.

Such defects may degrade electrical characteristics of devices that include the silicon oxide films.

Such hydrogen and nitrogen atoms in the films may adversely affect the processing of the films, and result in a deviated refractive index (RI) and inconsistent etch selectivity.

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