69 results about "Nitrogen plasma" patented technology

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure which comprises a substrate, and a graphene composite nano layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially stacked on the substrate. The graphene composite nano layer comprises a modified graphene layer and a ZnO sub-layer which are stacked in sequence, the modified graphene layer is arranged on the substrate, and the ZnO sub-layer is arranged on the modified graphene layer; the modified graphene layer is subjected to nitrogen plasma treatment, and the thickness of the modified graphene layer is 10-100 nm; and the thickness of the ZnO sub layer is 20 nm to 200 nm. According to the invention, lattice mismatch dislocation, residual stress and thermal mismatch of the epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, the probability of radiation recombination of the heterogeneous epitaxial material is improved, and the requirement of heterogeneous epitaxy is relaxed at the same time.

The invention discloses a nitrogen plasma vapor deposition modified metal oxide catalyst and a preparation method and application thereof.The preparation method of the catalyst comprises the steps that tin salt, CTAB and ammonia water serve as raw materials, SnO2 is prepared through a solution gel method, then the preliminarily-prepared SnO2 is calcined in the air atmosphere, purer SnO2 is prepared, and the catalyst is used for preparing the metal oxide catalyst. And finally, carrying out chemical vapor deposition modification on SnO2 by utilizing high-energy-state N * plasma to prepare the catalyst. The nitrogen-doped tin dioxide catalyst is synthesized on the basis of a chemical vapor deposition method strategy, and the catalyst shows extraordinary performance of electrocatalytic oxygen reduction for synthesis of hydrogen peroxide in an alkaline medium, has good stability and a wide potential window, and has potential application prospects in the field of electrochemical preparation of hydrogen peroxide.

The invention discloses a method for preparing an ultrahigh-conductivity graphene / copper composite material through nitrogen plasma ball milling, and relates to the technical field of metal-based composite material preparation. The preparation method of the composite material comprises the steps that copper powder and graphene are mixed and placed in plasma ball milling equipment, a plasma generator and a high-energy ball milling device are started for mixing treatment in the nitrogen atmosphere, and composite powder is obtained; and the composite powder is densified through a spark plasma sintering technology, and the block composite material is obtained. Through the synergistic effect of plasma stripping, nitrogen doping and mechanical compounding, high-quality stripping, controllable doping and uniform dispersion of graphene are achieved in one step, interface bonding of graphene and copper is remarkably improved, and the interface electron transmission capacity is effectively enhanced. The graphene / copper composite material prepared by the preparation method disclosed by the invention shows extremely high conductivity while keeping high density.

The invention relates to the technical field of permanent magnet materials, in particular to a method for increasing resistance of a permanent magnet, which comprises the following steps of: (1) weighing raw materials, smelting and refining to obtain alloy melt; (2) the alloy melt is subjected to cooling, powdering, forming, sintering treatment and aging treatment, cooling is conducted, and a samarium cobalt blank is obtained; (3) the samarium cobalt blank is subjected to machining grinding, slicing, end face grinding, cleaning and drying, and a plurality of flaky magnets are prepared; sequentially performing argon plasma treatment and nitrogen plasma treatment on each end surface of the flaky magnet, and sputtering a boron nitride layer and a silicon dioxide layer on the end surface of the flaky magnet by adopting a magnetron sputtering method; and carrying out annealing treatment, bonding and curing treatment to obtain the high-resistance permanent magnet. According to the method for increasing the resistance of the permanent magnet, the resistance of the rotor magnet can be effectively increased, and eddy current generated by the motor rotor magnet is further reduced.

This invention relates to the field of plasma surface treatment technology and discloses a plasma nitrogen oxidation composite treatment process for hydraulic cylinder piston rods. The process includes: low-temperature pulsed nitrogen-containing plasma treatment to form a non-porous metastable nitrogen solid solution substrate, during which the pulse timing is clamped to control the process temperature using an endogenous closed-loop rule; subsequently, a dense oxide film is grown in situ on this substrate. This invention reliably constructs a non-porous metastable nitrogen solid solution substrate by precisely controlling the low-temperature process window and suppressing parasitic heating through an endogenous thermal management closed loop, thus avoiding brittle phase precipitation defects. The in-situ grown oxide film is dense and firmly bonded, improving the corrosion resistance and service reliability of the piston rod.

The application relates to a molecular beam epitaxy preparation method of epitaxial high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the following steps: S1, obtaining a substrate, performing infrared lamp baking on the substrate, performing high-temperature deoxidization after heating pretreatment, and obtaining a pretreated substrate; S2, adopting a molecular beam epitaxy method to pre-deposit an Al layer on the pretreated substrate; S3, adopting the molecular beam epitaxy method to grow an AlN epitaxial layer on the pre-deposited Al layer; and S4, continuously introducing a nitrogen plasma post-treatment, and cooling to a wafer transfer temperature to obtain an epitaxial wafer. In the technical scheme, the pre-deposited Al layer can inhibit the reaction between the substrate and N in the AlN layer, the formation of amorphous particles is avoided, the AlN morphology is improved, meanwhile, the pre-deposited Al layer not only relieves the lattice mismatch problem between the substrate material and the AlN, but also improves the Al atom migration rate for the growth of the subsequent AlN layer, promotes two-dimensional growth, and thus the AlN crystal quality is improved.

The invention relates to the technical field of batteries, in particular to a lithium electrode and a preparation method thereof, a lithium battery and a lithium electrode preparation system. The preparation method of the lithium electrode comprises the following steps: bombarding at least one surface of a metal lithium layer by adopting first plasma and second plasma in sequence, and forming a first lithium nitride layer and a second lithium nitride layer on the surface of the metal lithium layer in sequence, wherein the first plasma comprises nitrogen plasma, and the second plasma comprises nitrogen plasma and inert gas plasma; the ratio of the bombardment time of the first plasma to the bombardment time of the second plasma is 1: (3-30); the ratio of the bombardment energy of the first plasma to the bombardment energy of the second plasma is (3-10): 1. According to the preparation method of the lithium battery provided by the invention, the compact lithium nitride layer with high ionic conductivity can be formed on the surface of the metal lithium layer, so that the electrochemical performance of the battery is improved.

The invention relates to a method for preparing a substrate activation-assisted aerosol deposition film, which comprises the following steps of: activating a substrate before the aerosol deposition film, namely sequentially performing plasma activation treatment of argon, oxygen and nitrogen at 25 + / -1 DEG C and under the pressure of 50-100Pa, removing organic matters on the surface by argon plasma activation, and removing organic matters on the surface by nitrogen plasma activation. A weak boundary layer is removed to form a certain rough structure, so that the surface area is increased; oxygen plasma generates a large number of polar groups such as hydroxyl on the surface of the substrate; nitrogen plasma nitrides the base material to generate Al-N bonds, so that the surface energy is improved, and a strong interface is formed; experiments prove that compared with an unactivated base material, the bonding strength of the coating subjected to aerosol deposition and the surface of the base material is improved to 33.5 MPa from 17.2 MPa, and an SEM pattern shows that the interface between the activated base material and the coating is clear, the coating is uniform, and the porosity is low.

The application discloses a kind of ceramic rock plate with decorative effect and production process thereof, belong to ceramic technical field.The rock plate is composed of body layer, bottom glaze layer, face glaze layer and inkjet pattern layer, after firing, through oxygen nitrogen plasma activation, aluminum salt and ammonia source compound hydrothermal reaction, high temperature calcination and silane derivative impregnation solidification, form micro-nano rough and low surface energy synergistic protective layer.Body is with wollastonite, quartz sand and the like as raw material, bottom glaze and face glaze adopt feldspar-quartz-nepheline system;After firing, after plasma treatment and hydrothermal generation acicular alumina, then introduce silane derivative to realize super-hydrophobic and wear-resistant double function.Compared with prior art, the application is anti-fouling, wear-resistant, and reaches national standard 5 level, process is simple, can be directly connected to existing production line, suitable for high-end wall and floor decoration.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention discloses a continuous production line for an aramid cord fabric of an aircraft tire, and belongs to the technical field of aramid cord fabric production. The surface of the aramid cord fabric is vertically and uniformly activated through a rotary nitrogen plasma torch to form a micro-nano rough structure, so that the permeation uniformity of RFL glue liquid is improved, and the yellow core defect of a traditional process is eliminated; a PLC intelligent linkage system of a magnetic stirrer and an ultrasonic vibrator is adopted, dynamic and stable control over the viscosity of the glue solution is achieved, and the problem of static gum dipping sedimentation layering is solved; a high-pressure spray gun driven by an electric guide rail is integrated in a drying oven to dynamically spray silane modified nano silicon dioxide suspension liquid, a three-layer composite structure composed of a closed isocyanate pretreatment layer, an RFL gum dipping layer and a nano-particle reinforcing layer is formed, nano-particles are embedded into fiber microcracks and extend outwards in a protruding mode, and the stripping strength of a cord fabric / rubber interface is improved; the product has a high strength retention rate at a brake high temperature of 300 DEG C, passes 500,000 times of dynamic impact tests, and meets the extreme requirements of the aircraft tire in the whole life cycle.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

This invention relates to a microfluidic chip driven by acoustically excited droplet-shaped microbubbles and its fabrication process. A droplet-shaped microbubble array is obtained through microfluidic chip structure design. Under acoustic excitation, the microbubbles oscillate, generating asymmetric acoustic-flow vortices, which in turn directionally drive the microfluidic fluid within the microchannels. The flow rate can be linearly controlled by adjusting the driving voltage, offering advantages such as non-contact, pollution-free, and highly efficient directional driving. The fabrication process is based on MEMS technology, employing nitrogen plasma bonding and soft lithography, resulting in low cost and suitability for mass production. This invention solves the problem of the lack of directionality in traditional symmetrical acoustic-flow vortices and can be widely applied in fields such as biomedicine, drug delivery, and chemical analysis.

To provide a technology capable of controlling a film shape in forming a film on a surface with an uneven structure.SOLUTION: A film formation method according to an embodiment of the present disclosure comprises: preparing a substrate having an uneven structure; forming a first film containing carbon on the surface of the uneven structure; supplying a nitrogen-containing plasma to the substrate and forming, on a portion of the surface of the first film, a low-carbon region in which the concentration of carbon is reduced; and supplying a halogen-containing material to the substrate and etching the low-carbon region.SELECTED DRAWING: Figure 1

The invention relates to a molecular beam epitaxy preparation method for epitaxy of high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the steps: S1, obtaining a substrate, carrying out infrared lamp baking and heating pretreatment on the substrate, and then carrying out high-temperature deoxidation to obtain a pretreated substrate; s2, pre-paving an Al layer on the pretreated substrate by adopting a molecular beam epitaxy method; s3, growing an AlN epitaxial layer on the pre-paved Al layer by adopting a molecular beam epitaxy method; and S4, continuously introducing nitrogen plasma for post-treatment, and cooling to a wafer transfer temperature to obtain the epitaxial wafer. According to the technical scheme, the reaction between the substrate and N in the AlN layer can be inhibited through the pre-laid Al layer, the formation of amorphous particles is avoided, so that the morphology of the AlN is improved, meanwhile, the pre-laid Al layer not only relieves the lattice mismatch problem of the substrate material and the AlN, but also improves the Al atom mobility and promotes the two-dimensional growth for the subsequent growth of the AlN layer, and thus the quality of the AlN crystal is improved.

An exhaust gas treatment apparatus for decomposing or treating exhaust gases such as PFCs is disclosed. Exhaust gas flowing from a vacuum chamber is introduced into a first exhaust gas decomposition unit and a second exhaust gas decomposition unit. Nitrogen gas supplied within the treatment space of the inner wall of the exhaust gas decomposition unit rotates along the inner wall. Nitrogen plasma concentrated at the center of the treatment space effectively decomposes the exhaust gas, preventing powder or radicals within the exhaust gas from being adhered onto the inner wall.

The invention provides a preparation method and device of a composite electrode. Under the supercritical fluid condition, the first mixture is subjected to degreasing treatment, and a degreased product is obtained; mixing the degreased product with a composite activator to obtain a second mixture; performing graded heat treatment on the second mixture to obtain derived hierarchical porous carbon; the preparation method comprises the following steps: sequentially carrying out oxygen-containing plasma treatment and nitrogen-containing plasma treatment on a graphite felt substrate, forming an etching structure on the surface of the graphite felt substrate, and introducing an active functional group to obtain an activated graphite felt; mixing the derived hierarchical porous carbon with a bonding component to form a dispersion system, and applying the dispersion system to the surface of the activated graphite felt by adopting a multi-gradient loading process to obtain a loaded intermediate; and carrying out heat treatment on the loaded intermediate to fix the derived hierarchical porous carbon on the surface of the activated graphite felt to obtain the composite electrode. Therefore, the interfacial activity and the long-acting stability of the composite electrode are remarkably improved.

This invention discloses a method for manufacturing a semiconductor device, comprising: Step 1, providing a wafer; Step 2, introducing a titanium source gas, wherein the titanium source gas forms a titanium source precursor under thermal decomposition, and a titanium source precursor layer is adsorbed and deposited at least on the sidewalls and bottom of the contact vias of the wafer; Step 3, introducing a hydrogen-containing gas and a nitrogen-containing gas, generating hydrogen-containing plasma and nitrogen-containing plasma under the action of a radio frequency source, wherein the hydrogen-containing plasma and nitrogen-containing plasma react with the titanium source precursor layer to form a titanium nitride layer; Step 4, filling the contact vias with conductive metal to form ohmic contacts; and performing Step 2 and Step 3 alternately N times until the thickness of the titanium nitride layer reaches a set thickness, where N is a positive integer. This invention, by employing a technique of repeatedly alternating Step 2 and Step 3, significantly improves the formation quality of the barrier layer, thereby increasing the yield of CIS products.

The application relates to a nitrogen plasma cleaning machine and a cleaning method, which comprise a nitrogen plasma cleaning machine body, the inner part of which is respectively provided with a chamber wall cleaning mechanism and an auxiliary cleaning mechanism; the auxiliary cleaning mechanism is cooperated with a first screw rod, a transmission rack, a transmission gear, a connecting rod and a bearing plate and the like, a motor is driven to drive a sliding support to stably slide along a guide rail, the transmission rack is engaged with the transmission gear to drive the connecting rod to overturn the bearing plate, the most upper layer and the most lower layer of glass sheets and the middle layer of glass sheets can be cyclically and interchangeably positioned, the self-weight limiting action provided by a counterweight limiting block guarantees the stable barycenter of the bearing plate in the overturning process, the glass sheets are prevented from shaking or deviating during the position changing, the reliability and the safety of the overturning action are remarkably improved, and the mechanism effectively overcomes the problem that the cleaning effect of the upper and lower layers of glass sheets is poor due to uneven plasma distribution in the existing nitrogen plasma cleaning equipment.

A method is used to fabricate a structure comprising a thin layer bonded to a carrier by way of a dielectric layer, the carrier comprising a charge-trapping layer placed on the surface of a base substrate. The method includes applying a surface treatment to an exposed surface of the main face of the carrier and / or to an exposed surface of the main face of the donor substrate to form thereon a layer that acts as a barrier to the diffusion of certain atomic species. This surface treatment involves exposing the exposed surface to an oxygen-containing plasma, and then exposing the exposed surface to a nitrogen-containing plasma.

The invention discloses a preparation method of a nitride semiconductor LED with high wavelength stability, and belongs to the field of semiconductor luminescent devices. The lattice mismatch stress of the sapphire substrate and the nitride semiconductor is effectively reduced through two-dimensional material auxiliary epitaxy, a polarization electric field in a quantum structure is weakened, and therefore the wavelength stability of the large-size GaN-based red light or LED epitaxial wafer is remarkably improved. Nitrogen is emitted by the nitrogen plasma source for irradiation treatment, so that interlayer combination of graphene is enhanced, and self-separation of an epitaxial layer is prevented; the quantum limited stark effect is weakened through stress regulation and control, so that the change of the wavelength along with the current and the temperature is extremely small; the method is high in process compatibility, is applied to heterogeneous integration and chip manufacturing of red, green and blue three-primary-color LEDs with high wavelength stability in the same material system, promotes the development of a micro-LED full-color display technology, is high in material quality and low in cost, and has a wide application prospect.

The invention relates to the technical field of carbon black preparation, in particular to a method for preparing carbon black through thermal plasma fluidization, application and a preparation device. The preparation method comprises the following steps: respectively preheating a reaction furnace and a fluidized bed reactor by adopting a direct-current arc plasma discharge mode; spraying atomized raw oil from an inlet of the reaction furnace, and carrying out primary pyrolytic reaction on the raw oil under the action of nitrogen plasma to form a primary carbon black aggregate; conveying the primary carbon black aggregate and the carbon dioxide plasma into a fluidized bed reactor for secondary activation reaction to generate a carbon black product; and cooling and carrying out gas-solid separation to obtain the high-structure carbon black. According to the invention, the plasma technology is creatively combined with the fluidized bed reactor, so that one-step preparation of the high-structure carbon black is realized.

The invention discloses a process for strengthening flotation of cuprite through nitrogen plasma surface reconstruction, which comprises the following steps of: crushing high-calcium and high-silicon cuprite, performing dry ball milling, and screening to obtain cuprite powder; the cuprite powder is evenly placed in a plasma reaction chamber, nitrogen is introduced, and high-activity nitrogen plasma selectively acts on the surface of cuprite; pulp mixing and sulfuration treatment: adding ultrapure water into the cuprite powder, uniformly stirring, then adjusting the pH value of the pulp, and then carrying out sulfuration treatment; and flotation separation and product collection are conducted, specifically, a collecting agent and a foaming agent are sequentially added into the cuprite ore pulp, flotation operation is conducted, and efficient separation of cuprite and gangue minerals is achieved. According to the method, selective surface reconstruction is conducted on the cuprite powder through the nitrogen plasma, the floatability difference between the cuprite and gangue minerals is enlarged, targeted strengthening of the vulcanization reaction activity and the adsorption capacity of the collecting agent is achieved, and the cuprite vulcanization flotation recovery rate and the concentrate Cu grade are improved.

A method for decontaminating residual halogen species m a processed metal-containing layer without breaking vacuum includes processing a metal-containing layer (such as a metal oxide layer) using a halogen-containing process gas to form a processed metal-containing layer that includes residual halogen species, and chemically modifying the residual halogen species to form modified residual species using a reactive gas to decontaminate the residual halogen species. Decontamination may include neutralization and / or removal of the residual halogen species. The metal-containing layer may be an organometal oxide photoresist and processing with the halogen-containing process gas may form a patterned photoresist layer contaminated with the residual halogen species. The modified residual species may be further treated using dinitrogen plasma (pure or with additional gases) and / or additional reactive gases, both of which may be combined with maintaining and higher or lower temperature during the treatment.

The application discloses wafer-level two-dimensional graphite-phase carbon nitride and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a pretreatment cavity after cleaning and drying; performing degassing and vacuum annealing on the substrate until an atomic level step appears on the surface of the substrate, and then cooling to a first temperature; controlling a growth table to be heated to the first temperature, transferring the substrate to the growth table, and heating to a second temperature; controlling the growth table to rotate, introducing nitrogen into the growth cavity, and controlling a nitrogen plasma generating device and an electron beam device to start working; synchronously opening a nitrogen plasma generating device shutter and an electron beam device shutter; and cooling to room temperature after growth is completed. The wafer-level two-dimensional graphite-phase carbon nitride film is directly prepared based on a method of plasma-assisted molecular beam epitaxy, the prepared two-dimensional graphite-phase carbon nitride has good uniformity and high crystallization quality, the size and thickness of the prepared graphite-phase carbon nitride film can be adjusted based on actual requirements, and different research or working condition requirements can be met.

The present application is a method for depositing a metal conductive layer on a glass substrate, comprising the following steps: cleaning a glass substrate and forming a titanium metal thin film on the surface of the glass substrate. The titanium metal thin film is surface treated by a reaction plasma to become an intermediate layer, wherein the reaction plasma includes an oxygen plasma, a nitrogen plasma, a fluorine plasma or a chlorine plasma, and the intermediate layer includes a titanium oxide thin film, a titanium nitride thin film, a titanium fluoride thin film or a titanium chloride thin film. A titanium metal conductive layer is formed on the intermediate layer of the glass substrate. The titanium metal conductive layer is connected to the glass substrate through the intermediate layer, which can increase the adhesion between the titanium metal conductive layer and the glass substrate, and is conducive to improving the yield and reliability of subsequent packaging processes.

The present application relates to the field of nanomaterial preparation and plasma chemical engineering, and particularly relates to a method and device for preparing carbon black by cracking low-carbon hydrocarbons using high-temperature nitrogen plasma. The method comprises: introducing nitrogen into a cracking zone of a reaction furnace to form high-temperature nitrogen plasma by ionization via a plasma generator; injecting low-carbon hydrocarbon raw materials into the high-temperature nitrogen plasma to perform a cracking reaction under oxygen-free conditions at a temperature of 1400-1800 DEG C, to generate a mixed gas stream comprising carbon, nitrogen and hydrogen plasma; introducing the mixed gas stream into a reaction zone to complete carbon particle growth at 1000-1600 DEG C, and to generate ammonia by combining nitrogen and hydrogen; and subsequently rapidly cooling, cooling down and gas-solid separating the gas stream to obtain carbon black products. The present application uses nitrogen as a working gas, and has the advantages of simple process, low energy consumption, small electrode loss, no carbon deposition problem, and the ability to efficiently prepare high-purity, high-structure conductive carbon black, while simultaneously producing ammonia gas, which is safe and environmentally friendly, and suitable for industrial production.

The application relates to the field of textile dyeing and finishing, and discloses a water-free plasma-assisted dyeing method for cotton blended fabric; the method comprises the following steps: performing carbon dioxide dry cleaning on the cotton blended fabric; sequentially performing oxygen and carbon dioxide mixed gas plasma first activation treatment and nitrogen plasma second activation treatment on the cleaned cotton blended fabric; transferring the activated cotton blended fabric into a supercritical carbon dioxide dyeing cavity in a carbon dioxide atmosphere; adding active disperse dyes, and performing pressure circulation between a first pressure condition and a second pressure condition to complete supercritical carbon dioxide variable-density dyeing; then, the pressure is reduced to a low-pressure carbon dioxide gas state, and a tertiary amine type fixing accelerator is added to perform fixing; after the fixing is completed, carbon dioxide is used for blowing and recycling un-fixed active disperse dyes and the tertiary amine type fixing accelerator.

The invention discloses application of plasma in preparation of a product for relieving ischemia reperfusion injury. Based on the application, nitrogen plasma is adopted to directly treat myocardial ischemia parts and ischemia peripheral areas, and in the process, plasma active substances act on heart tissue cells to activate damage resistance of heart tissues and promote protection of related passages, so that reperfusion injury is reduced, the infarct area is reduced, and the heart function is protected.