98 results about "Nitrogen plasma" patented technology

The invention discloses a ceramic rock plate with a decorative effect and a production process thereof, and belongs to the technical field of ceramics. The rock plate is composed of a green body layer, a ground glaze layer, a cover glaze layer and an ink jet pattern layer, and after firing, a micro-nano rough and low-surface-energy synergistic protection layer is formed through oxygen-nitrogen plasma activation, a hydrothermal reaction of aluminum salt and an ammonia source compound, high-temperature calcination and silane derivative dipping and curing. The green body takes wollastonite, quartz sand and the like as raw materials, and the ground glaze and the cover glaze adopt a feldspar-quartz-nepheline system; after firing, performing plasma treatment and hydrothermal treatment to generate needle-shaped aluminum oxide, and introducing a silane derivative to realize double functions of super-hydrophobicity and wear resistance. Compared with the prior art, the anti-fouling and wear-resistant coating reaches the national standard 5 level, the process is simple, and the coating can be directly connected to an existing production line and is suitable for high-end wall floor decoration.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention provides a high-performance nitrogen vacancy color center diamond material under yttrium oxide protection and a preparation method and application thereof, and belongs to the technical field of quantum materials. The preparation method comprises the following steps: firstly carrying out electron irradiation and cleaning on a diamond substrate, then processing by adopting nitrogen plasma, then depositing an yttrium oxide coating, and annealing the diamond substrate deposited with the yttrium oxide coating under a vacuum condition to obtain the high-performance nitrogen vacancy color center diamond material. According to the method, the diamond is treated through the nitrogen plasma, so that the displacement nitrogen concentration in the diamond can be increased, and the NV-color center concentration can be increased in the subsequent annealing treatment process; meanwhile, the yttrium oxide coating is deposited on the diamond substrate, so that defects on the surface of the diamond can be reduced, the NV-color center concentration is increased, and the prepared diamond material has excellent corrosion resistance. The diamond material prepared by the preparation method can be used for preparing quantum sensors used under extreme conditions.

The invention discloses a cleaning method and a cleaning system for a deposition chamber. The cleaning method comprises the following steps that dissociated NF3 is introduced from the top of a cavity so as to at least clean tungsten residues in the upper half area in the cavity for one time; stopping introducing the dissociated NF3, and introducing dissociated O2 from the top of the chamber so as to at least clean the carbon residues in the upper half area for one time; and dissociated NF3 is introduced from the top and the bottom of the cavity at the same time, so that the tungsten residues and the carbon residues in the upper half area and the lower half area in the cavity are subjected to secondary cleaning. By executing the steps, the problem that the cleaning effect on the carbon residues in the chamber is poor due to combination of nitrogen plasma and oxygen plasma caused by simultaneous dissociation and introduction of NF3 and O2 into the chamber can be solved, so that the cleaning effect on the carbon residues is improved, the cleaning time is shortened, and the cleaning efficiency is improved. And the process effect and the process stability of the tungsten carbide thin film in the chamber are further improved.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure which comprises a substrate, and a graphene composite nano layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially stacked on the substrate. The graphene composite nano layer comprises a modified graphene layer and a ZnO sub-layer which are stacked in sequence, the modified graphene layer is arranged on the substrate, and the ZnO sub-layer is arranged on the modified graphene layer; the modified graphene layer is subjected to nitrogen plasma treatment, and the thickness of the modified graphene layer is 10-100 nm; and the thickness of the ZnO sub layer is 20 nm to 200 nm. According to the invention, lattice mismatch dislocation, residual stress and thermal mismatch of the epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, the probability of radiation recombination of the heterogeneous epitaxial material is improved, and the requirement of heterogeneous epitaxy is relaxed at the same time.

The invention discloses a nitrogen plasma vapor deposition modified metal oxide catalyst and a preparation method and application thereof.The preparation method of the catalyst comprises the steps that tin salt, CTAB and ammonia water serve as raw materials, SnO2 is prepared through a solution gel method, then the preliminarily-prepared SnO2 is calcined in the air atmosphere, purer SnO2 is prepared, and the catalyst is used for preparing the metal oxide catalyst. And finally, carrying out chemical vapor deposition modification on SnO2 by utilizing high-energy-state N * plasma to prepare the catalyst. The nitrogen-doped tin dioxide catalyst is synthesized on the basis of a chemical vapor deposition method strategy, and the catalyst shows extraordinary performance of electrocatalytic oxygen reduction for synthesis of hydrogen peroxide in an alkaline medium, has good stability and a wide potential window, and has potential application prospects in the field of electrochemical preparation of hydrogen peroxide.

The invention discloses a method for preparing an ultrahigh-conductivity graphene / copper composite material through nitrogen plasma ball milling, and relates to the technical field of metal-based composite material preparation. The preparation method of the composite material comprises the steps that copper powder and graphene are mixed and placed in plasma ball milling equipment, a plasma generator and a high-energy ball milling device are started for mixing treatment in the nitrogen atmosphere, and composite powder is obtained; and the composite powder is densified through a spark plasma sintering technology, and the block composite material is obtained. Through the synergistic effect of plasma stripping, nitrogen doping and mechanical compounding, high-quality stripping, controllable doping and uniform dispersion of graphene are achieved in one step, interface bonding of graphene and copper is remarkably improved, and the interface electron transmission capacity is effectively enhanced. The graphene / copper composite material prepared by the preparation method disclosed by the invention shows extremely high conductivity while keeping high density.

The invention relates to the technical field of permanent magnet materials, in particular to a method for increasing resistance of a permanent magnet, which comprises the following steps of: (1) weighing raw materials, smelting and refining to obtain alloy melt; (2) the alloy melt is subjected to cooling, powdering, forming, sintering treatment and aging treatment, cooling is conducted, and a samarium cobalt blank is obtained; (3) the samarium cobalt blank is subjected to machining grinding, slicing, end face grinding, cleaning and drying, and a plurality of flaky magnets are prepared; sequentially performing argon plasma treatment and nitrogen plasma treatment on each end surface of the flaky magnet, and sputtering a boron nitride layer and a silicon dioxide layer on the end surface of the flaky magnet by adopting a magnetron sputtering method; and carrying out annealing treatment, bonding and curing treatment to obtain the high-resistance permanent magnet. According to the method for increasing the resistance of the permanent magnet, the resistance of the rotor magnet can be effectively increased, and eddy current generated by the motor rotor magnet is further reduced.

This invention relates to the field of plasma surface treatment technology and discloses a plasma nitrogen oxidation composite treatment process for hydraulic cylinder piston rods. The process includes: low-temperature pulsed nitrogen-containing plasma treatment to form a non-porous metastable nitrogen solid solution substrate, during which the pulse timing is clamped to control the process temperature using an endogenous closed-loop rule; subsequently, a dense oxide film is grown in situ on this substrate. This invention reliably constructs a non-porous metastable nitrogen solid solution substrate by precisely controlling the low-temperature process window and suppressing parasitic heating through an endogenous thermal management closed loop, thus avoiding brittle phase precipitation defects. The in-situ grown oxide film is dense and firmly bonded, improving the corrosion resistance and service reliability of the piston rod.

The application relates to a molecular beam epitaxy preparation method of epitaxial high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the following steps: S1, obtaining a substrate, performing infrared lamp baking on the substrate, performing high-temperature deoxidization after heating pretreatment, and obtaining a pretreated substrate; S2, adopting a molecular beam epitaxy method to pre-deposit an Al layer on the pretreated substrate; S3, adopting the molecular beam epitaxy method to grow an AlN epitaxial layer on the pre-deposited Al layer; and S4, continuously introducing a nitrogen plasma post-treatment, and cooling to a wafer transfer temperature to obtain an epitaxial wafer. In the technical scheme, the pre-deposited Al layer can inhibit the reaction between the substrate and N in the AlN layer, the formation of amorphous particles is avoided, the AlN morphology is improved, meanwhile, the pre-deposited Al layer not only relieves the lattice mismatch problem between the substrate material and the AlN, but also improves the Al atom migration rate for the growth of the subsequent AlN layer, promotes two-dimensional growth, and thus the AlN crystal quality is improved.

The invention relates to the technical field of batteries, in particular to a lithium electrode and a preparation method thereof, a lithium battery and a lithium electrode preparation system. The preparation method of the lithium electrode comprises the following steps: bombarding at least one surface of a metal lithium layer by adopting first plasma and second plasma in sequence, and forming a first lithium nitride layer and a second lithium nitride layer on the surface of the metal lithium layer in sequence, wherein the first plasma comprises nitrogen plasma, and the second plasma comprises nitrogen plasma and inert gas plasma; the ratio of the bombardment time of the first plasma to the bombardment time of the second plasma is 1: (3-30); the ratio of the bombardment energy of the first plasma to the bombardment energy of the second plasma is (3-10): 1. According to the preparation method of the lithium battery provided by the invention, the compact lithium nitride layer with high ionic conductivity can be formed on the surface of the metal lithium layer, so that the electrochemical performance of the battery is improved.

The invention relates to a method for preparing a substrate activation-assisted aerosol deposition film, which comprises the following steps of: activating a substrate before the aerosol deposition film, namely sequentially performing plasma activation treatment of argon, oxygen and nitrogen at 25 + / -1 DEG C and under the pressure of 50-100Pa, removing organic matters on the surface by argon plasma activation, and removing organic matters on the surface by nitrogen plasma activation. A weak boundary layer is removed to form a certain rough structure, so that the surface area is increased; oxygen plasma generates a large number of polar groups such as hydroxyl on the surface of the substrate; nitrogen plasma nitrides the base material to generate Al-N bonds, so that the surface energy is improved, and a strong interface is formed; experiments prove that compared with an unactivated base material, the bonding strength of the coating subjected to aerosol deposition and the surface of the base material is improved to 33.5 MPa from 17.2 MPa, and an SEM pattern shows that the interface between the activated base material and the coating is clear, the coating is uniform, and the porosity is low.

The invention discloses a titanium nitride film atomic layer deposition method and atomic layer deposition equipment, and relates to the technical field of semiconductors. The method for depositing the titanium nitride thin film on the atomic layer comprises the steps that S100, a semiconductor substrate is placed in a reaction cavity of atomic layer deposition equipment; s200, the temperature of the reaction cavity is increased to a preset temperature, and the pressure of the reaction cavity is adjusted to a preset pressure; s300, C8H24N4Ti serving as a precursor source is conveyed into the reaction cavity, Ti (N (CH3) 2) x is generated on the surface of the semiconductor substrate, and x is larger than or equal to 1 and smaller than or equal to 2; s400, nitrogen plasma is provided to serve as active nitrogen free radicals to be conveyed into the reaction cavity, the active nitrogen free radicals react with Ti (N (CH3) 2) x, TiNy is generated on the surface of the semiconductor substrate through deposition, and y is larger than or equal to 0.75 and smaller than or equal to 0.85; and S500, hydrogen plasma serves as a reducing agent to be conveyed into the reaction cavity, TiNy is subjected to a reduction reaction through the hydrogen plasma, and the TiN film is deposited and generated on the surface of the semiconductor substrate. Compared with the prior art, C8H24N4Ti serves as a precursor source, the problem of Cl residue is solved, and the electrical property of the TiN film is improved.

The application discloses a kind of ceramic rock plate with decorative effect and production process thereof, belong to ceramic technical field.The rock plate is composed of body layer, bottom glaze layer, face glaze layer and inkjet pattern layer, after firing, through oxygen nitrogen plasma activation, aluminum salt and ammonia source compound hydrothermal reaction, high temperature calcination and silane derivative impregnation solidification, form micro-nano rough and low surface energy synergistic protective layer.Body is with wollastonite, quartz sand and the like as raw material, bottom glaze and face glaze adopt feldspar-quartz-nepheline system;After firing, after plasma treatment and hydrothermal generation acicular alumina, then introduce silane derivative to realize super-hydrophobic and wear-resistant double function.Compared with prior art, the application is anti-fouling, wear-resistant, and reaches national standard 5 level, process is simple, can be directly connected to existing production line, suitable for high-end wall and floor decoration.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention discloses a continuous production line for an aramid cord fabric of an aircraft tire, and belongs to the technical field of aramid cord fabric production. The surface of the aramid cord fabric is vertically and uniformly activated through a rotary nitrogen plasma torch to form a micro-nano rough structure, so that the permeation uniformity of RFL glue liquid is improved, and the yellow core defect of a traditional process is eliminated; a PLC intelligent linkage system of a magnetic stirrer and an ultrasonic vibrator is adopted, dynamic and stable control over the viscosity of the glue solution is achieved, and the problem of static gum dipping sedimentation layering is solved; a high-pressure spray gun driven by an electric guide rail is integrated in a drying oven to dynamically spray silane modified nano silicon dioxide suspension liquid, a three-layer composite structure composed of a closed isocyanate pretreatment layer, an RFL gum dipping layer and a nano-particle reinforcing layer is formed, nano-particles are embedded into fiber microcracks and extend outwards in a protruding mode, and the stripping strength of a cord fabric / rubber interface is improved; the product has a high strength retention rate at a brake high temperature of 300 DEG C, passes 500,000 times of dynamic impact tests, and meets the extreme requirements of the aircraft tire in the whole life cycle.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

This invention relates to a microfluidic chip driven by acoustically excited droplet-shaped microbubbles and its fabrication process. A droplet-shaped microbubble array is obtained through microfluidic chip structure design. Under acoustic excitation, the microbubbles oscillate, generating asymmetric acoustic-flow vortices, which in turn directionally drive the microfluidic fluid within the microchannels. The flow rate can be linearly controlled by adjusting the driving voltage, offering advantages such as non-contact, pollution-free, and highly efficient directional driving. The fabrication process is based on MEMS technology, employing nitrogen plasma bonding and soft lithography, resulting in low cost and suitability for mass production. This invention solves the problem of the lack of directionality in traditional symmetrical acoustic-flow vortices and can be widely applied in fields such as biomedicine, drug delivery, and chemical analysis.

To provide a technology capable of controlling a film shape in forming a film on a surface with an uneven structure.SOLUTION: A film formation method according to an embodiment of the present disclosure comprises: preparing a substrate having an uneven structure; forming a first film containing carbon on the surface of the uneven structure; supplying a nitrogen-containing plasma to the substrate and forming, on a portion of the surface of the first film, a low-carbon region in which the concentration of carbon is reduced; and supplying a halogen-containing material to the substrate and etching the low-carbon region.SELECTED DRAWING: Figure 1

The invention relates to the technical field of antennas, in particular to an OBD (On-Board Diagnostic) integrated multi-band antenna manufacturing method based on an LDS (Laser Direct Structuring) process, which comprises the following steps of: carrying out injection molding on an OBD shell substrate by adopting a modified composite material containing a copper-nickel metal organic matter; cooperative processing is carried out through a 532nm and 1064nm dual-wavelength laser; treating in a chemical copper plating solution containing graphene quantum dots for 25-35 minutes; during treatment in a chemical nickel plating solution with the pH value of 8.5-9.5, pulse electroplating is synchronously carried out; local gold plating is assisted by femtosecond laser; processing an impedance gradient transition region in a nitrogen plasma environment; and S7, monitoring the components of the plating layer in real time through an online mass spectrometer, dynamically adjusting the parameters of the plating solution, and controlling the atomic ratio of Cu to Ni within the range of 3: 1 to 5: 1. Compared with the prior art, the method for manufacturing the OBD integrated multi-band antenna based on the LDS process can realize the structural integration of the antenna and the OBD shell, saves the internal space occupied by a traditional independent antenna, and facilitates the miniaturization of OBD equipment.

The invention relates to a molecular beam epitaxy preparation method for epitaxy of high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the steps: S1, obtaining a substrate, carrying out infrared lamp baking and heating pretreatment on the substrate, and then carrying out high-temperature deoxidation to obtain a pretreated substrate; s2, pre-paving an Al layer on the pretreated substrate by adopting a molecular beam epitaxy method; s3, growing an AlN epitaxial layer on the pre-paved Al layer by adopting a molecular beam epitaxy method; and S4, continuously introducing nitrogen plasma for post-treatment, and cooling to a wafer transfer temperature to obtain the epitaxial wafer. According to the technical scheme, the reaction between the substrate and N in the AlN layer can be inhibited through the pre-laid Al layer, the formation of amorphous particles is avoided, so that the morphology of the AlN is improved, meanwhile, the pre-laid Al layer not only relieves the lattice mismatch problem of the substrate material and the AlN, but also improves the Al atom mobility and promotes the two-dimensional growth for the subsequent growth of the AlN layer, and thus the quality of the AlN crystal is improved.

The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.

An exhaust gas treatment apparatus for decomposing or treating exhaust gases such as PFCs is disclosed. Exhaust gas flowing from a vacuum chamber is introduced into a first exhaust gas decomposition unit and a second exhaust gas decomposition unit. Nitrogen gas supplied within the treatment space of the inner wall of the exhaust gas decomposition unit rotates along the inner wall. Nitrogen plasma concentrated at the center of the treatment space effectively decomposes the exhaust gas, preventing powder or radicals within the exhaust gas from being adhered onto the inner wall.

The invention provides a preparation method and device of a composite electrode. Under the supercritical fluid condition, the first mixture is subjected to degreasing treatment, and a degreased product is obtained; mixing the degreased product with a composite activator to obtain a second mixture; performing graded heat treatment on the second mixture to obtain derived hierarchical porous carbon; the preparation method comprises the following steps: sequentially carrying out oxygen-containing plasma treatment and nitrogen-containing plasma treatment on a graphite felt substrate, forming an etching structure on the surface of the graphite felt substrate, and introducing an active functional group to obtain an activated graphite felt; mixing the derived hierarchical porous carbon with a bonding component to form a dispersion system, and applying the dispersion system to the surface of the activated graphite felt by adopting a multi-gradient loading process to obtain a loaded intermediate; and carrying out heat treatment on the loaded intermediate to fix the derived hierarchical porous carbon on the surface of the activated graphite felt to obtain the composite electrode. Therefore, the interfacial activity and the long-acting stability of the composite electrode are remarkably improved.

The invention belongs to the field of semiconductors, and discloses a preparation method of a p-type gallium oxide material, which comprises the following steps: 1) depositing a doping layer on the surface of gallium oxide; 2) placing the gallium oxide deposited with the doping layer in a protective gas atmosphere, and heating to a processing temperature; (3) after the treatment temperature is reached, nitrogen plasma is introduced, and gallium oxide is irradiated with one-dimensional line-shaped laser; and 4) after the laser irradiation treatment is finished, closing the nitrogen plasma, and carrying out annealing treatment in a protective gas atmosphere. Preparation of the p-type gallium oxide material is realized in a laser-induced doping mode, and the preparation method is simple in preparation process, low in production cost and beneficial to popularization and application of gallium oxide devices.

This invention discloses a method for manufacturing a semiconductor device, comprising: Step 1, providing a wafer; Step 2, introducing a titanium source gas, wherein the titanium source gas forms a titanium source precursor under thermal decomposition, and a titanium source precursor layer is adsorbed and deposited at least on the sidewalls and bottom of the contact vias of the wafer; Step 3, introducing a hydrogen-containing gas and a nitrogen-containing gas, generating hydrogen-containing plasma and nitrogen-containing plasma under the action of a radio frequency source, wherein the hydrogen-containing plasma and nitrogen-containing plasma react with the titanium source precursor layer to form a titanium nitride layer; Step 4, filling the contact vias with conductive metal to form ohmic contacts; and performing Step 2 and Step 3 alternately N times until the thickness of the titanium nitride layer reaches a set thickness, where N is a positive integer. This invention, by employing a technique of repeatedly alternating Step 2 and Step 3, significantly improves the formation quality of the barrier layer, thereby increasing the yield of CIS products.

The application relates to a nitrogen plasma cleaning machine and a cleaning method, which comprise a nitrogen plasma cleaning machine body, the inner part of which is respectively provided with a chamber wall cleaning mechanism and an auxiliary cleaning mechanism; the auxiliary cleaning mechanism is cooperated with a first screw rod, a transmission rack, a transmission gear, a connecting rod and a bearing plate and the like, a motor is driven to drive a sliding support to stably slide along a guide rail, the transmission rack is engaged with the transmission gear to drive the connecting rod to overturn the bearing plate, the most upper layer and the most lower layer of glass sheets and the middle layer of glass sheets can be cyclically and interchangeably positioned, the self-weight limiting action provided by a counterweight limiting block guarantees the stable barycenter of the bearing plate in the overturning process, the glass sheets are prevented from shaking or deviating during the position changing, the reliability and the safety of the overturning action are remarkably improved, and the mechanism effectively overcomes the problem that the cleaning effect of the upper and lower layers of glass sheets is poor due to uneven plasma distribution in the existing nitrogen plasma cleaning equipment.

A semiconductor device using a group III nitride semiconductor and a method for manufacturing the semiconductor device. The method includes a first oxide film forming step of forming a first oxide film with an insulation property on or above a semiconductor layer made of a group III nitride semiconductor, a nitrogen plasma treatment step of irradiating the first oxide film with nitrogen plasma, thereby injecting nitrogen into the first oxide film, a first heat treatment step of performing first heat treatment on the first oxide film to nitride the first oxide film, thereby forming an oxynitride film, a second oxide film forming step of forming a second oxide film with an insulation property on or above the oxynitride film, and a second heat treatment step of performing second heat treatment on the second oxide film. In the nitrogen plasma treatment step, a microwave output is set to 300 W or less.

A method is used to fabricate a structure comprising a thin layer bonded to a carrier by way of a dielectric layer, the carrier comprising a charge-trapping layer placed on the surface of a base substrate. The method includes applying a surface treatment to an exposed surface of the main face of the carrier and / or to an exposed surface of the main face of the donor substrate to form thereon a layer that acts as a barrier to the diffusion of certain atomic species. This surface treatment involves exposing the exposed surface to an oxygen-containing plasma, and then exposing the exposed surface to a nitrogen-containing plasma.

The invention discloses a preparation method of a nitride semiconductor LED with high wavelength stability, and belongs to the field of semiconductor luminescent devices. The lattice mismatch stress of the sapphire substrate and the nitride semiconductor is effectively reduced through two-dimensional material auxiliary epitaxy, a polarization electric field in a quantum structure is weakened, and therefore the wavelength stability of the large-size GaN-based red light or LED epitaxial wafer is remarkably improved. Nitrogen is emitted by the nitrogen plasma source for irradiation treatment, so that interlayer combination of graphene is enhanced, and self-separation of an epitaxial layer is prevented; the quantum limited stark effect is weakened through stress regulation and control, so that the change of the wavelength along with the current and the temperature is extremely small; the method is high in process compatibility, is applied to heterogeneous integration and chip manufacturing of red, green and blue three-primary-color LEDs with high wavelength stability in the same material system, promotes the development of a micro-LED full-color display technology, is high in material quality and low in cost, and has a wide application prospect.