37 results about "Nitrogen plasma" patented technology

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure which comprises a substrate, and a graphene composite nano layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially stacked on the substrate. The graphene composite nano layer comprises a modified graphene layer and a ZnO sub-layer which are stacked in sequence, the modified graphene layer is arranged on the substrate, and the ZnO sub-layer is arranged on the modified graphene layer; the modified graphene layer is subjected to nitrogen plasma treatment, and the thickness of the modified graphene layer is 10-100 nm; and the thickness of the ZnO sub layer is 20 nm to 200 nm. According to the invention, lattice mismatch dislocation, residual stress and thermal mismatch of the epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, the probability of radiation recombination of the heterogeneous epitaxial material is improved, and the requirement of heterogeneous epitaxy is relaxed at the same time.

The invention discloses a method for preparing an ultrahigh-conductivity graphene / copper composite material through nitrogen plasma ball milling, and relates to the technical field of metal-based composite material preparation. The preparation method of the composite material comprises the steps that copper powder and graphene are mixed and placed in plasma ball milling equipment, a plasma generator and a high-energy ball milling device are started for mixing treatment in the nitrogen atmosphere, and composite powder is obtained; and the composite powder is densified through a spark plasma sintering technology, and the block composite material is obtained. Through the synergistic effect of plasma stripping, nitrogen doping and mechanical compounding, high-quality stripping, controllable doping and uniform dispersion of graphene are achieved in one step, interface bonding of graphene and copper is remarkably improved, and the interface electron transmission capacity is effectively enhanced. The graphene / copper composite material prepared by the preparation method disclosed by the invention shows extremely high conductivity while keeping high density.

The invention relates to the technical field of permanent magnet materials, in particular to a method for increasing resistance of a permanent magnet, which comprises the following steps of: (1) weighing raw materials, smelting and refining to obtain alloy melt; (2) the alloy melt is subjected to cooling, powdering, forming, sintering treatment and aging treatment, cooling is conducted, and a samarium cobalt blank is obtained; (3) the samarium cobalt blank is subjected to machining grinding, slicing, end face grinding, cleaning and drying, and a plurality of flaky magnets are prepared; sequentially performing argon plasma treatment and nitrogen plasma treatment on each end surface of the flaky magnet, and sputtering a boron nitride layer and a silicon dioxide layer on the end surface of the flaky magnet by adopting a magnetron sputtering method; and carrying out annealing treatment, bonding and curing treatment to obtain the high-resistance permanent magnet. According to the method for increasing the resistance of the permanent magnet, the resistance of the rotor magnet can be effectively increased, and eddy current generated by the motor rotor magnet is further reduced.

This invention relates to the field of plasma surface treatment technology and discloses a plasma nitrogen oxidation composite treatment process for hydraulic cylinder piston rods. The process includes: low-temperature pulsed nitrogen-containing plasma treatment to form a non-porous metastable nitrogen solid solution substrate, during which the pulse timing is clamped to control the process temperature using an endogenous closed-loop rule; subsequently, a dense oxide film is grown in situ on this substrate. This invention reliably constructs a non-porous metastable nitrogen solid solution substrate by precisely controlling the low-temperature process window and suppressing parasitic heating through an endogenous thermal management closed loop, thus avoiding brittle phase precipitation defects. The in-situ grown oxide film is dense and firmly bonded, improving the corrosion resistance and service reliability of the piston rod.

The application relates to a molecular beam epitaxy preparation method of epitaxial high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the following steps: S1, obtaining a substrate, performing infrared lamp baking on the substrate, performing high-temperature deoxidization after heating pretreatment, and obtaining a pretreated substrate; S2, adopting a molecular beam epitaxy method to pre-deposit an Al layer on the pretreated substrate; S3, adopting the molecular beam epitaxy method to grow an AlN epitaxial layer on the pre-deposited Al layer; and S4, continuously introducing a nitrogen plasma post-treatment, and cooling to a wafer transfer temperature to obtain an epitaxial wafer. In the technical scheme, the pre-deposited Al layer can inhibit the reaction between the substrate and N in the AlN layer, the formation of amorphous particles is avoided, the AlN morphology is improved, meanwhile, the pre-deposited Al layer not only relieves the lattice mismatch problem between the substrate material and the AlN, but also improves the Al atom migration rate for the growth of the subsequent AlN layer, promotes two-dimensional growth, and thus the AlN crystal quality is improved.

The invention relates to the technical field of batteries, in particular to a lithium electrode and a preparation method thereof, a lithium battery and a lithium electrode preparation system. The preparation method of the lithium electrode comprises the following steps: bombarding at least one surface of a metal lithium layer by adopting first plasma and second plasma in sequence, and forming a first lithium nitride layer and a second lithium nitride layer on the surface of the metal lithium layer in sequence, wherein the first plasma comprises nitrogen plasma, and the second plasma comprises nitrogen plasma and inert gas plasma; the ratio of the bombardment time of the first plasma to the bombardment time of the second plasma is 1: (3-30); the ratio of the bombardment energy of the first plasma to the bombardment energy of the second plasma is (3-10): 1. According to the preparation method of the lithium battery provided by the invention, the compact lithium nitride layer with high ionic conductivity can be formed on the surface of the metal lithium layer, so that the electrochemical performance of the battery is improved.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention discloses a continuous production line for an aramid cord fabric of an aircraft tire, and belongs to the technical field of aramid cord fabric production. The surface of the aramid cord fabric is vertically and uniformly activated through a rotary nitrogen plasma torch to form a micro-nano rough structure, so that the permeation uniformity of RFL glue liquid is improved, and the yellow core defect of a traditional process is eliminated; a PLC intelligent linkage system of a magnetic stirrer and an ultrasonic vibrator is adopted, dynamic and stable control over the viscosity of the glue solution is achieved, and the problem of static gum dipping sedimentation layering is solved; a high-pressure spray gun driven by an electric guide rail is integrated in a drying oven to dynamically spray silane modified nano silicon dioxide suspension liquid, a three-layer composite structure composed of a closed isocyanate pretreatment layer, an RFL gum dipping layer and a nano-particle reinforcing layer is formed, nano-particles are embedded into fiber microcracks and extend outwards in a protruding mode, and the stripping strength of a cord fabric / rubber interface is improved; the product has a high strength retention rate at a brake high temperature of 300 DEG C, passes 500,000 times of dynamic impact tests, and meets the extreme requirements of the aircraft tire in the whole life cycle.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

This invention relates to a microfluidic chip driven by acoustically excited droplet-shaped microbubbles and its fabrication process. A droplet-shaped microbubble array is obtained through microfluidic chip structure design. Under acoustic excitation, the microbubbles oscillate, generating asymmetric acoustic-flow vortices, which in turn directionally drive the microfluidic fluid within the microchannels. The flow rate can be linearly controlled by adjusting the driving voltage, offering advantages such as non-contact, pollution-free, and highly efficient directional driving. The fabrication process is based on MEMS technology, employing nitrogen plasma bonding and soft lithography, resulting in low cost and suitability for mass production. This invention solves the problem of the lack of directionality in traditional symmetrical acoustic-flow vortices and can be widely applied in fields such as biomedicine, drug delivery, and chemical analysis.

An exhaust gas treatment apparatus for decomposing or treating exhaust gases such as PFCs is disclosed. Exhaust gas flowing from a vacuum chamber is introduced into a first exhaust gas decomposition unit and a second exhaust gas decomposition unit. Nitrogen gas supplied within the treatment space of the inner wall of the exhaust gas decomposition unit rotates along the inner wall. Nitrogen plasma concentrated at the center of the treatment space effectively decomposes the exhaust gas, preventing powder or radicals within the exhaust gas from being adhered onto the inner wall.

The invention provides a preparation method and device of a composite electrode. Under the supercritical fluid condition, the first mixture is subjected to degreasing treatment, and a degreased product is obtained; mixing the degreased product with a composite activator to obtain a second mixture; performing graded heat treatment on the second mixture to obtain derived hierarchical porous carbon; the preparation method comprises the following steps: sequentially carrying out oxygen-containing plasma treatment and nitrogen-containing plasma treatment on a graphite felt substrate, forming an etching structure on the surface of the graphite felt substrate, and introducing an active functional group to obtain an activated graphite felt; mixing the derived hierarchical porous carbon with a bonding component to form a dispersion system, and applying the dispersion system to the surface of the activated graphite felt by adopting a multi-gradient loading process to obtain a loaded intermediate; and carrying out heat treatment on the loaded intermediate to fix the derived hierarchical porous carbon on the surface of the activated graphite felt to obtain the composite electrode. Therefore, the interfacial activity and the long-acting stability of the composite electrode are remarkably improved.

This invention discloses a method for manufacturing a semiconductor device, comprising: Step 1, providing a wafer; Step 2, introducing a titanium source gas, wherein the titanium source gas forms a titanium source precursor under thermal decomposition, and a titanium source precursor layer is adsorbed and deposited at least on the sidewalls and bottom of the contact vias of the wafer; Step 3, introducing a hydrogen-containing gas and a nitrogen-containing gas, generating hydrogen-containing plasma and nitrogen-containing plasma under the action of a radio frequency source, wherein the hydrogen-containing plasma and nitrogen-containing plasma react with the titanium source precursor layer to form a titanium nitride layer; Step 4, filling the contact vias with conductive metal to form ohmic contacts; and performing Step 2 and Step 3 alternately N times until the thickness of the titanium nitride layer reaches a set thickness, where N is a positive integer. This invention, by employing a technique of repeatedly alternating Step 2 and Step 3, significantly improves the formation quality of the barrier layer, thereby increasing the yield of CIS products.

The invention relates to the technical field of carbon black preparation, in particular to a method for preparing carbon black through thermal plasma fluidization, application and a preparation device. The preparation method comprises the following steps: respectively preheating a reaction furnace and a fluidized bed reactor by adopting a direct-current arc plasma discharge mode; spraying atomized raw oil from an inlet of the reaction furnace, and carrying out primary pyrolytic reaction on the raw oil under the action of nitrogen plasma to form a primary carbon black aggregate; conveying the primary carbon black aggregate and the carbon dioxide plasma into a fluidized bed reactor for secondary activation reaction to generate a carbon black product; and cooling and carrying out gas-solid separation to obtain the high-structure carbon black. According to the invention, the plasma technology is creatively combined with the fluidized bed reactor, so that one-step preparation of the high-structure carbon black is realized.

The invention discloses a process for strengthening flotation of cuprite through nitrogen plasma surface reconstruction, which comprises the following steps of: crushing high-calcium and high-silicon cuprite, performing dry ball milling, and screening to obtain cuprite powder; the cuprite powder is evenly placed in a plasma reaction chamber, nitrogen is introduced, and high-activity nitrogen plasma selectively acts on the surface of cuprite; pulp mixing and sulfuration treatment: adding ultrapure water into the cuprite powder, uniformly stirring, then adjusting the pH value of the pulp, and then carrying out sulfuration treatment; and flotation separation and product collection are conducted, specifically, a collecting agent and a foaming agent are sequentially added into the cuprite ore pulp, flotation operation is conducted, and efficient separation of cuprite and gangue minerals is achieved. According to the method, selective surface reconstruction is conducted on the cuprite powder through the nitrogen plasma, the floatability difference between the cuprite and gangue minerals is enlarged, targeted strengthening of the vulcanization reaction activity and the adsorption capacity of the collecting agent is achieved, and the cuprite vulcanization flotation recovery rate and the concentrate Cu grade are improved.

A method for decontaminating residual halogen species m a processed metal-containing layer without breaking vacuum includes processing a metal-containing layer (such as a metal oxide layer) using a halogen-containing process gas to form a processed metal-containing layer that includes residual halogen species, and chemically modifying the residual halogen species to form modified residual species using a reactive gas to decontaminate the residual halogen species. Decontamination may include neutralization and / or removal of the residual halogen species. The metal-containing layer may be an organometal oxide photoresist and processing with the halogen-containing process gas may form a patterned photoresist layer contaminated with the residual halogen species. The modified residual species may be further treated using dinitrogen plasma (pure or with additional gases) and / or additional reactive gases, both of which may be combined with maintaining and higher or lower temperature during the treatment.

The application discloses wafer-level two-dimensional graphite-phase carbon nitride and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a pretreatment cavity after cleaning and drying; performing degassing and vacuum annealing on the substrate until an atomic level step appears on the surface of the substrate, and then cooling to a first temperature; controlling a growth table to be heated to the first temperature, transferring the substrate to the growth table, and heating to a second temperature; controlling the growth table to rotate, introducing nitrogen into the growth cavity, and controlling a nitrogen plasma generating device and an electron beam device to start working; synchronously opening a nitrogen plasma generating device shutter and an electron beam device shutter; and cooling to room temperature after growth is completed. The wafer-level two-dimensional graphite-phase carbon nitride film is directly prepared based on a method of plasma-assisted molecular beam epitaxy, the prepared two-dimensional graphite-phase carbon nitride has good uniformity and high crystallization quality, the size and thickness of the prepared graphite-phase carbon nitride film can be adjusted based on actual requirements, and different research or working condition requirements can be met.

The present application relates to the field of nanomaterial preparation and plasma chemical engineering, and particularly relates to a method and device for preparing carbon black by cracking low-carbon hydrocarbons using high-temperature nitrogen plasma. The method comprises: introducing nitrogen into a cracking zone of a reaction furnace to form high-temperature nitrogen plasma by ionization via a plasma generator; injecting low-carbon hydrocarbon raw materials into the high-temperature nitrogen plasma to perform a cracking reaction under oxygen-free conditions at a temperature of 1400-1800 DEG C, to generate a mixed gas stream comprising carbon, nitrogen and hydrogen plasma; introducing the mixed gas stream into a reaction zone to complete carbon particle growth at 1000-1600 DEG C, and to generate ammonia by combining nitrogen and hydrogen; and subsequently rapidly cooling, cooling down and gas-solid separating the gas stream to obtain carbon black products. The present application uses nitrogen as a working gas, and has the advantages of simple process, low energy consumption, small electrode loss, no carbon deposition problem, and the ability to efficiently prepare high-purity, high-structure conductive carbon black, while simultaneously producing ammonia gas, which is safe and environmentally friendly, and suitable for industrial production.

The invention discloses application of plasma in preparation of a product for relieving ischemia reperfusion injury. Based on the application, nitrogen plasma is adopted to directly treat myocardial ischemia parts and ischemia peripheral areas, and in the process, plasma active substances act on heart tissue cells to activate damage resistance of heart tissues and promote protection of related passages, so that reperfusion injury is reduced, the infarct area is reduced, and the heart function is protected.

This invention discloses an aluminum nitride thin film and its preparation method. The preparation method includes the following steps: taking an aluminum source and washing it for later use; placing the washed aluminum source in a radio frequency plasma system and pretreating it with ammonium salt plasma; then further treating the aluminum source with nitrogen plasma; after treatment, introducing an inert gas and cooling to room temperature to obtain the aluminum nitride thin film. The aluminum nitride thin film prepared by this method has the advantages of simple preparation method and high preparation efficiency, and can effectively solve the problems of high equipment requirements, high requirements for preparation parameters, and complex preparation processes in the prior art.

The invention discloses a CrFeCoNiCuZnS six-membered single-phase high-entropy sulfide photocatalytic material, a preparation method thereof and application of the photocatalytic material in treatment of uranium-containing wastewater, the preparation method of the photocatalytic material comprises the following steps: (1) adding metal salts into a solvent, and stirring to form a uniform metal salt solution, the metal salts comprising a chromium salt, an iron salt, a cobalt salt, a nickel salt, a copper salt and a zinc salt; (2) adding a sulfur source and other additives into the metal salt solution, and stirring to form a mixed solution; and (3) carrying out nitrogen plasma treatment on the mixed solution to obtain a precursor solution, then heating the precursor solution, and after heating, naturally cooling, washing and drying to obtain the composite material. According to the invention, the CrFeCoNiCuZnS six-element high-entropy system is constructed to realize division and cooperation of active site functions and series coupling of an adsorption-catalysis process, so that efficient, high-selectivity and stable photocatalytic separation of uranyl ions in a complex water environment is realized.

The present disclosure relates, for example, to a hybrid bonding method in which an organic insulating film is used as an insulating film. In hybrid bonding methods in which an organic insulating film is used, heating at the time of bonding sometimes results in a thermal expansion difference between the organic insulating film and a terminal electrode that is formed of a metal or the like, and it is necessary to provide, in advance, a specific level difference D between the tip surface of the terminal electrode and the surface of the organic insulating film. In the present disclosure, in order to provide such a level difference D, the surface of a semiconductor substrate 100 is irradiated with nitrogen plasma. With this nitrogen plasma irradiation, an organic insulating film 102 of the semiconductor substrate 100 is etched by the nitrogen plasma so that a surface 102a of the organic insulating film 102 is positioned further back than a tip surface 103a of an electrode 103.

The invention belongs to the technical field of metal protection structures and surface engineering, and particularly relates to a manufacturing method of a wear-resistant and corrosion-resistant metal fan cover. The fan cover is prepared by compounding a steel-based material synergistically modified by nitrogen plasma, N-phenyl vinyl amide, a heat-resistant stabilizer, an antioxidant, a curing agent, a flexibilizer and a surfactant. Through synergistic modification of nitrogen plasma, acetylene gas, yttrium oxide and gamma-aminopropyltriethoxysilane, a compact carbon nitrogen-rare earth composite strengthening layer is formed on the surface of a steel base, and then the high-binding-force protective film is formed through crosslinking and curing of small organic molecules. The surface hardness of the obtained fan housing reaches 900 HV, the wear rate is only 1.2 * 10 mm / N.m, the fan housing is free of corrosion after salt spray for 72 hours, and the bonding strength reaches 25 MPa. According to the synergistic modification system, the wear resistance and corrosion resistance of the metal fan cover are remarkably improved, and the metal fan cover is suitable for protection application in high-temperature, high-humidity and corrosive industrial environments.

This application provides a trench filling method. First, a first high-dielectric-constant oxide layer and a second high-dielectric-constant oxide layer are formed sequentially. Then, nitrogen plasma is used to bombard the surface of the epitaxial layer and the surface of the top layer in the deep trench. An isolation oxide layer of a certain thickness is then formed on the top layer using an ALD process. This process is repeated at least ten times until the stacked isolation oxide layer fills all remaining spaces in the deep trench. By bombarding the surface of the epitaxial layer and the surface of the top layer in the deep trench with nitrogen plasma before each cycle of ALD deposition of the isolation oxide layer, this application reduces the active sites of precursor adsorption while nitriding the surface of the top layer, thereby inhibiting the growth of the top layer at the opening of the deep trench and avoiding void defects during deep trench filling.

The application discloses a kind of medical catheter surface superlubricity coating and preparation method thereof, belong to medical instrument field, coating solution is coated on the medical catheter surface after nitrogen plasma treatment, further ultraviolet light curing and heat curing obtain the medical catheter surface superlubricity coating of described;The coating solution includes polyurethane acrylate, acrylic acid, ultraviolet light initiator, thermal crosslinking agent, functional polymer and solvent, wherein, the mass ratio of polyurethane acrylate, acrylic acid and functional polymer is 3-8:1:1-3, the mass fraction of acrylic acid is 1.6-2.4wt%, and functional polymer is at least one of polyvinylpyrrolidone, polyethylene glycol, hydroxypropyl methyl cellulose, hyaluronic acid, chitosan.The superlubricity coating and the binding force of medical catheter are good, stability and friction performance are excellent, and its single-layer structure is simple, curing time is short, and market application prospect is widely.

Methods used in electronic device manufacturing and, more particularly, to methods used for forming metal containing interconnect features in a semiconductor device. In one aspect, a method of forming a boron nitride layer on a metal surface is provided. The method includes exposing a surface of a metal layer to a nitrogen-containing plasma to form a metal nitride layer on the surface. The method further includes performing a chemical vapor deposition (CVD) soak process in which the metal nitride layer is exposed to a boron (B)-containing precursor gas, form a boron nitride monolayer.

A method for decontaminating residual halogen species in a processed metal-containing layer without breaking vacuum includes processing a metal-containing layer (such as a metal oxide layer) using a halogen-containing process gas to form a processed metal-containing layer that includes residual halogen species, and chemically modifying the residual halogen species to form modified residual species using a reactive gas to decontaminate the residual halogen species. Decontamination may include neutralization and / or removal of the residual halogen species. The metal-containing layer may be an organometal oxide photoresist and processing with the halogen-containing process gas may form a patterned photoresist layer contaminated with the residual halogen species. The modified residual species may be further treated using dinitrogen plasma (pure or with additional gases) and / or additional reactive gases, both of which may be combined with maintaining and higher or lower temperature during the treatment.

The present invention relates to a plant centered on a thermal plasma torch that generates hydrogen, argon, and nitrogen plasma as a heat source for melting and smelting minerals and industrial by-products containing the metals, in order to secure rare earth elements (REE) and platinum group metals (PGM) and rare metals such as cobalt and nickel, which are essential for the development of the information and communication industry, in an environmentally friendly and high-efficiency manner, and a method of applying different operating parameters depending on the raw materials using the same.

The invention discloses a FeCoNiCuZnS pentabasic single-phase high-entropy sulfide photocatalytic material and a preparation method and application thereof in treatment of uranium-containing wastewater, the preparation method of the photocatalytic material comprises the following steps: (1) adding metal salt into a solvent, and stirring to form a uniform metal salt solution, the metal salt including ferric salt, cobalt salt, nickel salt, copper salt and zinc salt; (2) adding a sulfur source and other additives into the metal salt solution, and stirring to form a mixed solution; and (3) carrying out nitrogen plasma treatment on the mixed solution to obtain a precursor solution, then heating the precursor solution, and after heating, naturally cooling, washing and drying to obtain the composite material. According to the invention, through unique five-component cooperation and an innovative composite sulfur source / structure-directing agent synthesis strategy, multiple bottlenecks of a traditional high-entropy photocatalyst in the aspects of efficiency, stability, spectral response and practical applicability are successfully solved; the system verifies the comprehensive performance of selective capture, deep removal and cycle durability on UO2 < 2 + > under visible light.

Methods used in electronic device manufacturing and, more particularly, to methods used for forming metal containing interconnect features in a semiconductor device. In one aspect, a method of forming a boron nitride layer on a metal surface is provided. The method includes exposing a surface of a metal layer to a nitrogen- containing plasma to form a metal nitride layer on the surface. The method further includes performing a chemical vapor deposition (CVD) soak process in which the metal nitride layer is exposed to a boron (B)-containing precursor gas, form a boron nitride monolayer.