11 results about "Nitrogen plasma" patented technology

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

This invention relates to a microfluidic chip driven by acoustically excited droplet-shaped microbubbles and its fabrication process. A droplet-shaped microbubble array is obtained through microfluidic chip structure design. Under acoustic excitation, the microbubbles oscillate, generating asymmetric acoustic-flow vortices, which in turn directionally drive the microfluidic fluid within the microchannels. The flow rate can be linearly controlled by adjusting the driving voltage, offering advantages such as non-contact, pollution-free, and highly efficient directional driving. The fabrication process is based on MEMS technology, employing nitrogen plasma bonding and soft lithography, resulting in low cost and suitability for mass production. This invention solves the problem of the lack of directionality in traditional symmetrical acoustic-flow vortices and can be widely applied in fields such as biomedicine, drug delivery, and chemical analysis.

This invention discloses a method for manufacturing a semiconductor device, comprising: Step 1, providing a wafer; Step 2, introducing a titanium source gas, wherein the titanium source gas forms a titanium source precursor under thermal decomposition, and a titanium source precursor layer is adsorbed and deposited at least on the sidewalls and bottom of the contact vias of the wafer; Step 3, introducing a hydrogen-containing gas and a nitrogen-containing gas, generating hydrogen-containing plasma and nitrogen-containing plasma under the action of a radio frequency source, wherein the hydrogen-containing plasma and nitrogen-containing plasma react with the titanium source precursor layer to form a titanium nitride layer; Step 4, filling the contact vias with conductive metal to form ohmic contacts; and performing Step 2 and Step 3 alternately N times until the thickness of the titanium nitride layer reaches a set thickness, where N is a positive integer. This invention, by employing a technique of repeatedly alternating Step 2 and Step 3, significantly improves the formation quality of the barrier layer, thereby increasing the yield of CIS products.

The application discloses wafer-level two-dimensional graphite-phase carbon nitride and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a pretreatment cavity after cleaning and drying; performing degassing and vacuum annealing on the substrate until an atomic level step appears on the surface of the substrate, and then cooling to a first temperature; controlling a growth table to be heated to the first temperature, transferring the substrate to the growth table, and heating to a second temperature; controlling the growth table to rotate, introducing nitrogen into the growth cavity, and controlling a nitrogen plasma generating device and an electron beam device to start working; synchronously opening a nitrogen plasma generating device shutter and an electron beam device shutter; and cooling to room temperature after growth is completed. The wafer-level two-dimensional graphite-phase carbon nitride film is directly prepared based on a method of plasma-assisted molecular beam epitaxy, the prepared two-dimensional graphite-phase carbon nitride has good uniformity and high crystallization quality, the size and thickness of the prepared graphite-phase carbon nitride film can be adjusted based on actual requirements, and different research or working condition requirements can be met.

The present application relates to the field of nanomaterial preparation and plasma chemical engineering, and particularly relates to a method and device for preparing carbon black by cracking low-carbon hydrocarbons using high-temperature nitrogen plasma. The method comprises: introducing nitrogen into a cracking zone of a reaction furnace to form high-temperature nitrogen plasma by ionization via a plasma generator; injecting low-carbon hydrocarbon raw materials into the high-temperature nitrogen plasma to perform a cracking reaction under oxygen-free conditions at a temperature of 1400-1800 DEG C, to generate a mixed gas stream comprising carbon, nitrogen and hydrogen plasma; introducing the mixed gas stream into a reaction zone to complete carbon particle growth at 1000-1600 DEG C, and to generate ammonia by combining nitrogen and hydrogen; and subsequently rapidly cooling, cooling down and gas-solid separating the gas stream to obtain carbon black products. The present application uses nitrogen as a working gas, and has the advantages of simple process, low energy consumption, small electrode loss, no carbon deposition problem, and the ability to efficiently prepare high-purity, high-structure conductive carbon black, while simultaneously producing ammonia gas, which is safe and environmentally friendly, and suitable for industrial production.

This application provides a trench filling method. First, a first high-dielectric-constant oxide layer and a second high-dielectric-constant oxide layer are formed sequentially. Then, nitrogen plasma is used to bombard the surface of the epitaxial layer and the surface of the top layer in the deep trench. An isolation oxide layer of a certain thickness is then formed on the top layer using an ALD process. This process is repeated at least ten times until the stacked isolation oxide layer fills all remaining spaces in the deep trench. By bombarding the surface of the epitaxial layer and the surface of the top layer in the deep trench with nitrogen plasma before each cycle of ALD deposition of the isolation oxide layer, this application reduces the active sites of precursor adsorption while nitriding the surface of the top layer, thereby inhibiting the growth of the top layer at the opening of the deep trench and avoiding void defects during deep trench filling.

The present invention relates to a plant centered on a thermal plasma torch that generates hydrogen, argon, and nitrogen plasma as a heat source for melting and smelting minerals and industrial by-products containing the metals, in order to secure rare earth elements (REE) and platinum group metals (PGM) and rare metals such as cobalt and nickel, which are essential for the development of the information and communication industry, in an environmentally friendly and high-efficiency manner, and a method of applying different operating parameters depending on the raw materials using the same.

The application discloses a core-shell structure powder preparation system and a core-shell structure powder based on hydrogen / nitrogen plasma jet transient heat treatment and atmosphere regulation and a preparation method thereof, and belongs to the technical field of material preparation and surface modification. The application solves the problem that a heterogeneous coating layer on the surface of a powder material is difficult to realize complete, uniform, thickness-controllable and firm interface bonding. In the application, metal droplets or metal vapor are injected into a receiving unit, oxide particles or metal droplets formed by the metal vapor react in a controllable reaction chamber, a surface layer is formed on the surface, is stabilized through a buffer zone, is quenched by a high-speed quenching and collecting unit, and core-shell structure powder is collected, when the metal vapor is used, the core is an oxide, and the shell layer is a metal element; when the metal droplet is used, the core is a metal element, and the shell layer is a nitride. The application realizes rapid surface reaction, maintains the original structure of the core phase, forms metallurgical bonding or strong chemical bonding between the shell layer and the core, and the coating of the shell layer is complete and uniform.

The invention provides a phosphorene material, a processing method, a device structure, a preparation method and manufacturing equipment, and the processing method comprises the steps: placing the phosphorene material in a plasma processing cavity, introducing nitrogen to generate nitrogen plasma, and processing the phosphorene material through the nitrogen plasma. The prepared surface nitrogen modified two-dimensional phosphorene nanosheet has high air stability, and the stability in air can reach 60 days or above. The surface-nitrogen-modified two-dimensional phosphorene nanosheet prepared by the method has an atomic-scale flat surface, and the atomic-scale flat surface can be kept in the air for more than 60 days.

Interconnect structure of a multilayer interconnect feature of an integrated circuit device, wherein the interconnect structure comprises the following: a first interlayer dielectric layer, ILD layer (210); a second ILD layer (270) arranged above the first ILD layer (210); a first copper interconnect (230) located in the first ILD layer (210); a second copper interconnect (290) arranged in the second ILD layer (270); and an aluminum nitride contact etch stop layer, aluminum nitride-CESL (250), arranged between a section of the first copper interconnect (230) and the second ILD layer (270) and between the first ILD layer (210) and the second ILD layer (270), wherein the second copper interconnect (290) extends through the aluminum nitride-CESL (250) to physically contact the first copper interconnect (230), and wherein a surface nitrogen concentration at an interface between the aluminum nitride-CESL (250) and the first copper interconnect (230) is approximately 20 at% or higher, which further exhibits the following: an oxygen-doped silicon carbide CESL (260) arranged above the aluminum nitride CESL (250); and an aluminum oxide CESL (262) arranged above the oxygen-doped silicon carbide CESL (260), wherein the second copper interconnect (290) extends through the oxygen-doped silicon carbide CESL (260) and the aluminum oxide CESL (262).

The application provides an electrochemical aptamer sensor for detecting streptomycin and a preparation method thereof, and the preparation method comprises the following steps: S1, pretreating a glassy carbon electrode; S2, preparing Cu-ZIF-8@AuNPs; performing nitrogen plasma treatment on the Cu-ZIF-8@AuNPs; S3, dropping the plasma modified Cu-ZIF-8@AuNPs suspension on the pretreated glassy carbon electrode and drying; S4, modifying the plasma modified Cu-ZIF-8@AuNPs / GCE composite electrode by using streptomycin aptamer to obtain a modified electrode; S5, performing blocking treatment by using BSA, and then performing washing and drying to obtain the electrochemical aptamer sensor; the plasma modified Cu-ZIF-8@AuNPs can significantly improve the electron transfer efficiency, and can enhance the streptomycin detection sensitivity, selectivity and stability of the electrochemical aptamer sensor.