GaN high voltage HFET with passivation plus gate dielectric multilayer structure
A technology of multi-layer structure and passivation layer, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems affecting the voltage-current characteristics and frequency response of IC devices
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[0012] In the ensuing description, several specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one of ordinary skill in the art that these specific details need not be employed to practice the invention. In other instances, well-known materials or methods have not been described in detail so as not to obscure the invention.
[0013] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described with respect to the embodiment or example is included in this specification. In at least one embodiment of the invention. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment. or example. Additionally, the particular features, structu...
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