2532 results about "CMOS" patented technology

The invention discloses an unmanned aerial vehicle edge intelligent analysis terminal based on a single Beidou, and relates to the technical field of satellite navigation and unmanned aerial vehicles, and the terminal comprises an edge calculation unit which is in communication connection with a high-definition image collection module, a high-precision positioning module, a Beidou short message communication module and a ground control station; the high-definition image acquisition module is used for acquiring high-definition image data through a CMOS (Complementary Metal Oxide Semiconductor) sensor; the high-precision positioning module is used for acquiring centimeter-level positioning data in the flight process of the unmanned aerial vehicle through an RTK technology and an INS system; the edge calculation unit is used for carrying out target recognition through a lightweight convolutional neural network in combination with a YOLOv5 target detection algorithm; the Beidou short message communication module is used for realizing short message communication between the unmanned aerial vehicle and a ground control station by using RDSS service; and the ground control station is used for creating a user interface by using Qt, carrying out data visualization through Tableau and adopting a security protocol. According to the scheme, remote control, remote information transmission and high-precision positioning functions in a complex environment of the unmanned aerial vehicle are realized.

The invention discloses a hot air type qPCR instrument, a multi-channel detection optical system and a detection method, and relates to the field of molecular biological detection. The problems that an optical detection system adopted by an existing qPCR instrument mostly depends on a single-channel or double-channel design, sample hole sites need to be switched one by one and detected in a time-sharing mode in the detection process, namely, the efficiency is low in the face of a high-throughput requirement scene are solved, and the system combines multiple LED light sources with an optical filter to generate excitation wavelengths to form a light source module; after the multi-stage dichroscope is utilized to form a light combination module, the light combination module is transmitted to a reaction hole through one branch of the forked optical fiber to excite fluorescent substances, a fluorescent signal is collected through a common end of the forked optical fiber, the other branch of the forked optical fiber outputs a fluorescent signal, and the fluorescent signal is split by the reflection grating to form a light splitting module. And the array CMOS is combined with a spectrum unmixing algorithm to form a detection module for synchronous receiving, so that multi-channel simultaneous high-sensitivity detection is realized. The method is also suitable for the field of multi-pathogen detection and gene expression analysis.

A vehicular camera includes a camera housing having a front housing portion and a rear housing portion. The front housing portion includes a plurality of optical elements, a CMOS imager, and an imager printed circuit board. The CMOS imager is at a first side of the imager printed circuit board. The plurality of optical elements is held in position relative to the CMOS imager by an adhesive, whereby the imaging array at the outer side of the CMOS imager is devoid of the adhesive. The adhesive is formed by curing an adhesive material that is curable via exposure of the adhesive material to ultraviolet (UV) light. The adhesive maintains the position of the plurality of optical elements with respect to the CMOS imager during use of the vehicular camera assembly on a vehicle equipped with the vehicular camera assembly. The back housing portion is joined at the front housing portion.

An example described herein is a circuit including a dynamic complementary metal-oxide-semiconductor (CMOS) inverter level translator circuit and a capacitor. The dynamic CMOS inverter level translator circuit is electrically connected to a first power domain and has a first input node configured to receive a first trigger signal generated in the first power domain. The dynamic CMOS inverter level translator circuit has a second input node configured to receive a second trigger signal generated in a second power domain different from the first power domain. The capacitor is electrically coupled to an output node of the dynamic CMOS inverter level translator circuit. The capacitor selectively charges to the first power domain through the dynamic CMOS inverter level translator circuit based on the first trigger signal. The capacitor selectively discharges to provide a negative coupling voltage to a write assist supply node.

The invention belongs to the technical field of digital holographic measurement, and particularly relates to an optical element stress measurement and defect identification method based on a digital holographic photoelastic method. The method is realized based on a transmission-type off-axis digital holographic light path system; light beams emitted by the laser assembly are divided into reference light and object light, the object light is reflected by the surface of a sample and carries sample information, the object light and the reference light intersect in front of the CMOS camera to generate interference, the CMOS converts an interference light intensity signal into an electric signal, and holographic image processing is performed by the computer; the hologram before and after external force loading is reconstructed to obtain surface topography distribution, and the reconstruction precision is improved through the steps of positive first-order spectrum extraction, angular spectrum reconstruction automatic focusing and the like; the phase difference before and after external force loading is calculated through reconstruction complex amplitude phase extraction, and then the direction and size distribution of the principal stress of the sample are measured and calculated based on a digital photoelastic method and a stress optical law; and the defect of the optical element is identified by measuring the stress value change under the same external force loading, so that the method has important practical significance.

The invention belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a thin-film lithium niobate heterogeneous integrated chip configuration for a fiber-optic gyroscope. The thin-film lithium niobate hybrid photon integrated chip is utilized to realize on-chip heterogeneous integration of functional devices of the fiber-optic gyroscope. The discrete optical path device of the gyroscope is monolithic integrated and integrally packaged, the size and cost of the optical path are greatly reduced, optical fiber interconnection is reduced, the complexity of the assembly process is obviously reduced, and the long-term reliability of the performance of the gyroscope is effectively improved. By means of the CMOS technology with mature silicon photons, low-cost and large-scale batch production of the miniature fiber-optic gyroscope can be achieved, and the requirements for miniaturization and light weight of a future weapon system are met.

A system and a method for single-shot compressed optical-streaking ultra-high-speed imaging, the system comprising a spatial encoding module spatially encoding the transient event with a binary pseudo-random pattern into spatially encoded frames; a galvanometer scanner temporally shearing the spatially encoded frames; and a CMOS camera receiving the temporally sheared spatially encoded frames, during one exposure time of the camera, for reconstructing the transient event. The method comprises spatial encoding a transient event; temporal shearing resulting spatially encoded frames of the event, spatio-temporal integration, and reconstruction.

The invention relates to the technical field of refrigeration heat exchanger surface frost treatment, in particular to a machine vision and ultrasonic wave combined frost identifying and removing method. The method comprises the following steps: S1, deploying CCD / CMOS cameras at key points on the surface of the refrigeration heat exchanger to obtain data; s2, processing the data acquired in the step S1; and S3, cooperatively calculating the frosting thickness and area by adopting a Zhang-Suen skeletonization algorithm and an adaptive threshold segmentation algorithm, and judging the frosting level. According to the frost identifying and removing method combining machine vision and ultrasonic waves, ultrasonic defrosting and intelligent control are combined, the defrosting effect is monitored in real time through machine vision, ultrasonic wave parameters are dynamically adjusted, efficient and accurate defrosting is achieved, and the frost identifying and removing method combining machine vision and ultrasonic waves is achieved through multi-technology fusion. The full-automatic process from intelligent frost recognition and accurate positioning to efficient removal is achieved, the intelligent operation and maintenance level of the refrigeration system is greatly improved, manual intervention is reduced, and the operation reliability and stability are improved.

The invention discloses an edge real-time analysis-oriented sensing and calculation integrated spectrum camera processor system. Efficient edge calculation is realized through collaborative innovation of hardware, an algorithm and an accelerator. A hardware system adopts a three-level board card framework; a core board integrates a programmable logic unit and a processing system, and processes spectral data acquired by a CMOS board in real time; and the interface board accurately controls the power supply time sequence. In the lightweight classification network, the SSFE branch converts frequency domain filtering into cyclic matrix multiplication; carrying out normalization on the HFViT branch by using a batch normalization substitution layer; and an 8-bit full integer quantization strategy compression model is matched, and input spectrum identification characteristics are reserved. Time overlapping scheduling is designed for the accelerator, and SSFE matrix multiplication is executed in parallel in the HFViT calculation window period; the outer product pulsation architecture improves the matrix operation efficiency; and non-linear kernel multiplexing computing resources are unified. The system supports real-time classification of push-scan spectrum data, results are directly connected with sorting equipment, and the edge end embedded deployment requirement is met.

The present application belongs to the technical field of wireless communications and radar systems. Disclosed are a dual-band fusion and multiplexing frequency source, chips, a radio-frequency transceiver, a system, and a device. The system comprises: a full-function millimeter-wave CMOS 4+1 phased array chip, which is connected to an antenna end, and is used for realizing signal processing and frequency conversion between a millimeter-wave signal and a C-band intermediate-frequency signal, performing phase control and gain adjustment on the millimeter-wave signal, and providing an internal frequency source and a calibration function; a C-band front end, which is connected to the antenna end, and is used for receiving or transmitting a C-band signal; a C-band / intermediate-frequency transceiver multiplexing chip, which is used for performing frequency conversion between a C-band or intermediate-frequency signal and a baseband signal in a multiplexing manner, and performing signal processing and gain control on the C-band intermediate-frequency signal; a dual-band fusion and multiplexing frequency source, which is used for providing a local oscillator signal; and an all-digital control logic circuit, which is used for providing a control instruction. The present application improves the efficiency and performance of dual-band joint communications.

Provided is a display device including a CMOS wafer and a light emitting diode disposed on a first area of the CMOS wafer. The light emitting diode includes a first electrode member, an emission layer disposed on the first electrode member, and a second electrode member disposed on a semiconductor junction member. The first electrode member includes a metal layer, a reflective layer disposed on the metal layer, and a first transparent conductive layer disposed on the reflective layer.

The invention discloses a hyper-spectral imaging chip, device and system based on an adjustable and reconfigurable metasurface, the chip comprises a metasurface unit array, a metasurface reconstruction module, a metasurface adjustment module, a CMOS image sensor and a spectrum reconstruction and identification module, the metasurface unit array comprises a plurality of metasurface units arranged on a silicon layer; the metasurface reconstruction module is used for adjusting the number of metasurface units included in the reconfigurable metasurface unit array; the metasurface adjusting module is used for being connected with the silicon layer of the metasurface unit array through a wire and changing the spectral response of the metasurface unit by adjusting the voltage of the wire; the CMOS image sensor is used for detecting optical signals modulated by the reconfigurable metasurface unit array; and the spectrum reconstruction and identification module is used for performing hyper-spectrum reconstruction and imaging according to the optical signal detected by the CMOS image sensor. The system is adjustable in spectral response, and has ultrahigh spectral resolution, real-time dynamic monitoring capability and adaptive imaging capability.

The invention provides intelligent code reading equipment based on AI, and relates to the technical field of Internet. The equipment is provided with a shell which is made of an aluminum alloy material and is used for protecting internal vulnerable components; a light source module is arranged at the front end of the device and internally provided with multiple LED lamps with different wavelengths, and the illumination mode can be actively adjusted according to the actual environment requirement. A high-definition CMOS image sensor is used as an image acquisition module to complete image acquisition of a target area; the image processing module is integrated with a high-performance DSP chip, analyzes the original image acquired by the image acquisition module based on an AI algorithm, and outputs a decoding result; the environment sensor detects environment light information in real time and is used for optimizing light source brightness; the control module integrates the functions of each internal module, can command the brightness of the LED lamp according to environmental data, controls the image acquisition and processing process, and finally achieves the quick and accurate decoding of the identification code. According to the scheme, the equipment can intelligently adapt to environment change, and the image quality is improved, so that effective decoding is realized.

The invention relates to the technical field of optical elements, systems or instruments, in particular to a temperature field testing method based on combination of colorimetric temperature measurement and multispectral imaging, and solves the technical problems of low temperature field temperature measurement reconstruction precision and low temporal-spatial resolution of an existing temperature measurement method. The method comprises the following steps: determining a spectral range and a temperature measurement range of a temperature field of a solid engine combustion chamber by utilizing an LIBS (Laser-induced Breakdown Spectroscopy) technology, coupling and packaging a multispectral optical filter and a CMOS (Complementary Metal Oxide Semiconductor) sensor, calibrating a multispectral camera by utilizing a blackbody furnace, and acquiring a spectral image of the temperature field by utilizing the multispectral camera. And obtaining a two-dimensional temperature field of the combustion chamber of the solid engine by using a colorimetric temperature measurement method, and performing comprehensive evaluation. According to the invention, multispectral information of the solid propellant combustion chamber flame can be obtained, and high space-time resolution detection of the two-dimensional temperature field of the solid engine combustion chamber is realized.

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

The invention relates to a system and a method for making a colored low-light image. The system for making the color low-light-level image comprises a high-sensitivity CMOS imaging module which is used for enhancing the photon collection capability and reducing the noise level to complete imaging; the image enhancement processing module adopts a histogram equalization algorithm and comprises the steps of calculating a gray histogram of the original image, calculating a cumulative distribution function according to the gray histogram and performing gray mapping to obtain an enhanced gray value; the image noise reduction processing module is used for carrying out noise reduction on the image after enhancement processing, and filtering is carried out by adopting a night image noise reduction technology, a bilateral filtering method including spatial domain noise reduction and a band-pass filter including frequency domain noise reduction; and the colorful low-light-level image generation module obtains a colorful low-light-level night vision image by adopting an interpolation algorithm and makes a colorful low-light-level image. According to the system and the method for manufacturing the colored low-light-level image, special equipment is not depended on, the imaging quality of the colored low-light-level image can be improved, and the colored low-light-level image can be manufactured.

The invention relates to a laser galvanometer detection system with temperature drift self-detection and correction functions. The laser galvanometer detection system comprises an error judgment module and an error calibration module, the error judgment module comprises a CMOS image sensing module, a visual detection module and a storage module; the error calibration module comprises a calibration module and a laser marking module; the CMOS image sensing module is used for shooting a high-definition image, and the visual detection module can generate a prediction image and perform deviation identification on the image shot by the CMOS image sensing module. According to the invention, the temperature drift error is automatically detected through real-time detection of the position drift error of each visual single detection area in the galvanometer processing breadth, and each visual single detectable area is detected one by one to form an adjacent array, so that the temperature drift error detection of the whole processing breadth is realized; and comparing the difference between'theoretical due 'and'actual existing' through an intelligent algorithm so as to detect, compensate and correct the error in real time.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.

The present invention discloses a device and method for semiconductor grain double-sided simultaneous fully equal optical path confocal imaging detection based on polarization separation imaging method. The device includes a CMOS or CCD polarization camera, a telecentric imaging lens, a polarization cube beam splitter, a right-angle image rotation prism, a semiconductor grain, and a transparent glass stage for placing the semiconductor grain, which are sequentially arranged in the optical path direction. The advantages of the device and method of the present invention are as follows: It can achieve double-sided simultaneous fully equal optical path confocal polarization imaging detection of the object to be measured, that is, △ = 0, without the need to use a large-depth-of-field telecentric lens to compensate for the optical path difference of double-sided imaging; the double-sided simultaneous polarization imaging detection device has a simple and compact structure and is easy to assemble and debug.

The invention discloses a time domain compression femtosecond holographic microscopy reconstruction method based on spatial domain and frequency domain joint learning. Constructing a time domain compression femtosecond holographic microscopy system for carrying out multi-moment information time domain compression coding on a measured sample and generating a single-frame snapshot measurement graph; constructing a joint spatial domain-frequency domain learning end-to-end reconstruction model comprising a spatial frequency domain interaction module; training the model by taking a dynamic micro-nano structure hologram sequence generated by simulation as a training set until the joint spatial frequency domain loss function is converged; inputting a single-frame snapshot measurement image generated by a microscopic system into the model for processing to obtain a reconstructed hologram frame sequence; and performing frequency spectrum extraction and phase unwrapping processing to generate a dynamic three-dimensional scene video so as to realize time domain compression femtosecond holographic microscopy reconstruction. According to the invention, both the hardware imaging rate and the algorithm reconstruction precision are considered, and high-speed, high-resolution and low-cost four-dimensional holographic microscopic imaging can be realized under the conditions of extremely low data bandwidth and a common CMOS camera.

The invention discloses a broadband full-Stokes polarization imaging device based on non-orthogonal four-channel polarization beam splitting, which comprises a dielectric substrate, a non-orthogonal polarization beam splitting metasurface and a focal plane detection array, and is characterized in that the non-orthogonal polarization beam splitting metasurface is composed of a plurality of sub-wavelength unit structures; the sub-wavelength unit structure is a single-layer anisotropic medium nano-column array and is configured to perform intrinsic-loss-free non-orthogonal four-channel beam splitting on incident light and form four spatially separated focuses on the same focal plane, and polarization states corresponding to the four channels form a regular tetrahedron measurement base on a Poincare sphere; therefore, full Stokes parameter measurement is completed by four pixels; the sub-wavelength unit structure forms a super-pixel unit, and the super-pixel unit is aligned and integrated with a focal plane detection array in a two-dimensional array form to form a compact polarization camera facing focal plane segmentation. The device is simple in structure, easy to integrate with the CMOS front end, small in device size, low in power consumption and high in mass production feasibility.

The invention discloses a low-temperature CMOS carrier MFP and microscopic parameter extraction method and system, which are corresponding schemes, in the scheme, a carrier MFP extraction model for eliminating a microscopic unknown quantity is constructed by utilizing a geometric scaling rule of quasi-ballistic transport and an existing effective mobility extraction technology, and an MFP extraction model for eliminating the microscopic unknown quantity is constructed by utilizing the geometric scaling rule of quasi-ballistic transport and the existing effective mobility extraction technology; the MFP extracted by the carrier MFP extraction model is ensured to be a pure experiment observation value on the basis that effective quality, Fermi velocity and scattering time do not need to be predicted based on the self-consistency of macroscopic current and voltage data along with the change of channel length; meanwhile, on the basis, the microcosmic parameters are decoupled, so that the decoupled microcosmic parameters are extracted one by one; compared with an existing scheme, the method can be directly applied to a standard wafer-level test board in the industry, MFP distribution of hundreds of devices can be rapidly counted, and a feasible engineering scheme is provided for low-temperature process monitoring.

In an example, the present invention provides a micro-speaker device. The device has a movable diaphragm device comprising a thickness of silicon or graphene material which has a first surface and a second surface opposite of the first surface and sensor to track position of the diaphragm. The device has a housing enclosing the movable diaphragm device, the electrode device and an encapsulation device. The electrode device can be part of a CMOS device with electronics integrated on to the device that converts input audio signal in to signal that electrostatically actuates the micro-speaker from one or more surfaces.

The invention provides an optical detection device, a soil element detector and a soil element detection method. The device is characterized in that a laser beam expanding and collimating system performs beam expanding and collimating on laser emitted by a laser and inputs the laser into a multiplexing folding light path system; the multiplexing folding light path system carries out light beam folding on the laser subjected to beam expansion and collimation to obtain folding system emergent laser, and the folding system emergent laser is input into the surface scanning light path system; the surface scanning light path system focuses laser emitted by the folding system on a surface scanning target surface window to generate plasma; the spectral signal acquisition light path system acquires signal light radiated by the plasma; and the imaging system is used for imaging the window of the surface scanning target surface window on the CMOS camera. According to the device, through the design of a multi-stage optical system, the functions of laser beam expanding, collimation, folding, focusing, signal acquisition and the like are modularized, and each module is independently optimized to improve the stability of the whole device, so that the stability of data is improved, rapid and accurate scanning type detection on a to-be-detected surface is realized, and the anti-disturbance capability is improved.

The invention belongs to the field of hardware neural network design, and particularly discloses a CMOS-based attractor recurrent neural network system and an implementation method thereof.A neuron calculation module receives an external input high-level signal and generates an initial synaptic high-level signal; integration and activation calculation are carried out based on the current output by the synaptic calculation module, and whether a synaptic high-level signal is generated or not is determined according to an activation state; the synaptic storage module writes the non-zero weight into a synaptic weight SRAM (Static Random Access Memory) array; the synaptic calculation module performs product operation on the synaptic high-level signal and the synaptic weight in the synaptic weight SRAM array, and outputs current; when the STDP updating module is in a neuron training mode, the STDP updating module updates the synaptic weight SRAM array according to the synaptic high-level signal; and the group state module outputs a neuron sequence number corresponding to the maximum activation frequency. A cyclic connection structure of the attractor neural network is formed, and the real-time cognitive behavior requirement of the brain is met.

The invention provides a simulation system and method for online monitoring and assisting arc additive manufacturing. The method comprises the steps that S1, online monitoring equipment is used for obtaining process data of arc additive manufacturing; s2, extracting process data and preprocessing the process data; s3, performing secondary processing on the preprocessed data, and importing the processed data into simulation software; and S4, adjusting each parameter in the simulation software to a preset range, and completing the simulation process. The online monitoring technology is utilized, the temperature and morphology characteristics in the electric arc additive manufacturing process are obtained through thermal imaging, the laser contourgraph, the CMOS camera and the like, simulation model parameters are adjusted in real time, and high-precision, efficient and rapid electric arc additive manufacturing simulation can be achieved.

Disclosed is a reset semiconductor integrated circuit that outputs a reset signal in response to a power supply voltage of a monitoring target becoming lower than a predetermined level, the reset semiconductor integrated circuit including: a voltage detection circuit; an output stage including a CMOS circuit that generates and outputs a signal according to a detection result of the voltage detection circuit; a monitored voltage input terminal to which the power supply voltage of the monitoring target is input; a reference potential terminal to which a voltage as a reference potential of a circuit is applied; an external voltage terminal which is connected to a power supply voltage terminal of the output stage to allow a power supply voltage as an operation voltage of the output stage to be applied from outside; and an output terminal to output the signal generated by the output stage.

The invention discloses a data sampling timing error evaluation method based on an evaluation model, relates to the technical field of timing error evaluation, and solves the problem that timing error evaluation is not accurate enough. Wherein the sampling module realizes undistorted receiving and clock signal frequency output of a clock signal through a CMOS clock input circuit, a third-order digital phase-locked loop circuit and a DSP digital signal processing chip, and a Fourier phase difference algorithm removes harmonic interference to solve a phase difference between the clock signal and an ideal clock signal; the clock signal feature recognition unit adopts a convolutional neural network to carry out iterative training on a training set of the timing error evaluation module to obtain an error evaluation module, the error evaluation module and the time migration algorithm module realize accurate calculation of a timing error value, and the timing error value calculation accuracy is greatly improved.

The invention provides a process integration method of a high-voltage CMOS device and a semiconductor device.In the process integration method, before a floating gate material layer is formed, a high-voltage gate dielectric layer and a high-voltage well region of a high-voltage MOS device region are formed, and after the floating gate material layer is formed, the floating gate material layer and an ONO dielectric layer of the high-voltage MOS device region are reserved; the combination of the floating gate material layer, the ONO dielectric layer and the control gate material layer is used as a high-voltage gate structure of the high-voltage MOS device region, so that the thickness of the high-voltage gate structure is increased, and the thickness of the side wall structure of the high-voltage MOS device region is the same as that of the side wall structure of the flash memory device region, so that the thickness of the side wall structure of the high-voltage MOS device region is increased in a disguised manner; according to the invention, the ion implantation energy of the subsequent lightly-doped drain region can be correspondingly increased according to requirements, and a more slowly-changing LDD junction can be formed in a high-voltage MOS device region in a device integration process, so that the breakdown voltage of a high-voltage device is improved.

The invention belongs to the technical field of analog switches, and particularly relates to a double-channel single-pole double-throw analog switch circuit which comprises two turn-off leakage compensation modules, two ISO isolation circuits, two turn-on leakage compensation modules, eight MOS tubes M5-M12 and a current source. All the devices are correspondingly connected according to a circuit diagram to form an analog switch circuit; the invention designs a dual-channel single-pole double-throw analog switch, a 0.25 [mu] m BCD process is adopted, two groups of completely consistent single-pole double-branch CMOS switches are arranged in a chip, the normal temperature interval is-40 DEG C to 125 DEG C, the analog switch can normally work under three power supply conditions of + / -15V, 12V, 0V and + / -5V, and the analog switch has the advantages of low on-resistance, high switching speed, high reliability and the like. And conduction electric leakage and turn-off electric leakage are small.