3633 results about "CMOS" patented technology

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of forming a plurality of epitaxial layers for optical elements on an epitaxial growth substrate, wherein the epitaxial layers are based on a material system different from complementary metal-oxide-semiconductor, CMOS; providing a handle wafer; performing a first dielectric bonding between the epitaxial growth substrate and the handle wafer such that an order of the epitaxial layers for the optical elements is reversed on the handle wafer compared to on the epitaxial growth substrate; removing the epitaxial growth substrate to expose one of the epitaxial layers on the handle wafer; processing the exposed one of the epitaxial layers for providing a common electrode layer for a first contact of each of the optical elements in the optoelectronic device; providing a CMOS integrated circuit, IC, wafer comprising a driver circuit for the optoelectronic device; and performing a second dielectric bonding between the handle wafer and the IC wafer such that an order of the epitaxial layers for the optical elements is reversed on the IC wafer compared to on the handle wafer.

The current invention offers a method for preparing an electronic integrated circuit (EIC) for the assembly of an optical engine. The method involves stacking a CMOS-based EIC wafer onto a short loop / interposer wafer through face-to-back bonding. This stacked configuration serves as a carrier for the thin CMOS wafers. Subsequently, the stacked wafers are thinned down to the desired height and undergo a via last process. In this process, the thick metal layer from the short loop / interposer wafer acts as an etch stop. The stacked EIC wafers can then be diced and attached to a photonic integrated circuit (PIC) wafer, resulting in the formation of an optical engine.

The invention discloses an unmanned aerial vehicle edge intelligent analysis terminal based on a single Beidou, and relates to the technical field of satellite navigation and unmanned aerial vehicles, and the terminal comprises an edge calculation unit which is in communication connection with a high-definition image collection module, a high-precision positioning module, a Beidou short message communication module and a ground control station; the high-definition image acquisition module is used for acquiring high-definition image data through a CMOS (Complementary Metal Oxide Semiconductor) sensor; the high-precision positioning module is used for acquiring centimeter-level positioning data in the flight process of the unmanned aerial vehicle through an RTK technology and an INS system; the edge calculation unit is used for carrying out target recognition through a lightweight convolutional neural network in combination with a YOLOv5 target detection algorithm; the Beidou short message communication module is used for realizing short message communication between the unmanned aerial vehicle and a ground control station by using RDSS service; and the ground control station is used for creating a user interface by using Qt, carrying out data visualization through Tableau and adopting a security protocol. According to the scheme, remote control, remote information transmission and high-precision positioning functions in a complex environment of the unmanned aerial vehicle are realized.

The invention discloses a hot air type qPCR instrument, a multi-channel detection optical system and a detection method, and relates to the field of molecular biological detection. The problems that an optical detection system adopted by an existing qPCR instrument mostly depends on a single-channel or double-channel design, sample hole sites need to be switched one by one and detected in a time-sharing mode in the detection process, namely, the efficiency is low in the face of a high-throughput requirement scene are solved, and the system combines multiple LED light sources with an optical filter to generate excitation wavelengths to form a light source module; after the multi-stage dichroscope is utilized to form a light combination module, the light combination module is transmitted to a reaction hole through one branch of the forked optical fiber to excite fluorescent substances, a fluorescent signal is collected through a common end of the forked optical fiber, the other branch of the forked optical fiber outputs a fluorescent signal, and the fluorescent signal is split by the reflection grating to form a light splitting module. And the array CMOS is combined with a spectrum unmixing algorithm to form a detection module for synchronous receiving, so that multi-channel simultaneous high-sensitivity detection is realized. The method is also suitable for the field of multi-pathogen detection and gene expression analysis.

The invention discloses a real-time multi-target detection system based on ZYNQ. The real-time multi-target detection system comprises an upper computer, an image acquisition module and a ZYNQ board card, the image acquisition module is used for finishing Bayer interpolation processing by using an ISP module of the CMOS camera and outputting original video stream data in an RGB565 format after color restoration; the ZYNQ board card comprises an FPGA (Field Programmable Gate Array) end and an ARM (Advanced RISC Machines) end, wherein the FPGA end comprises a pixel filtering enhancement module, a self-adaptive threshold calculation module, a connected domain marking module and an AXI uplink module; the pixel filtering enhancement module is respectively connected with the adaptive threshold calculation module and the connected domain marking module, the adaptive threshold calculation module is connected with the connected domain marking module, and the connected domain marking module is connected with the AXI uplink module; and the ZYNQ board card outputs surrounding frame position information and effective area information. The method is low in resource consumption, high in real-time performance, high in flexibility and high in stability.

A vehicular camera includes a camera housing having a front housing portion and a rear housing portion. The front housing portion includes a plurality of optical elements, a CMOS imager, and an imager printed circuit board. The CMOS imager is at a first side of the imager printed circuit board. The plurality of optical elements is held in position relative to the CMOS imager by an adhesive, whereby the imaging array at the outer side of the CMOS imager is devoid of the adhesive. The adhesive is formed by curing an adhesive material that is curable via exposure of the adhesive material to ultraviolet (UV) light. The adhesive maintains the position of the plurality of optical elements with respect to the CMOS imager during use of the vehicular camera assembly on a vehicle equipped with the vehicular camera assembly. The back housing portion is joined at the front housing portion.

An example described herein is a circuit including a dynamic complementary metal-oxide-semiconductor (CMOS) inverter level translator circuit and a capacitor. The dynamic CMOS inverter level translator circuit is electrically connected to a first power domain and has a first input node configured to receive a first trigger signal generated in the first power domain. The dynamic CMOS inverter level translator circuit has a second input node configured to receive a second trigger signal generated in a second power domain different from the first power domain. The capacitor is electrically coupled to an output node of the dynamic CMOS inverter level translator circuit. The capacitor selectively charges to the first power domain through the dynamic CMOS inverter level translator circuit based on the first trigger signal. The capacitor selectively discharges to provide a negative coupling voltage to a write assist supply node.

The invention belongs to the technical field of digital holographic measurement, and particularly relates to an optical element stress measurement and defect identification method based on a digital holographic photoelastic method. The method is realized based on a transmission-type off-axis digital holographic light path system; light beams emitted by the laser assembly are divided into reference light and object light, the object light is reflected by the surface of a sample and carries sample information, the object light and the reference light intersect in front of the CMOS camera to generate interference, the CMOS converts an interference light intensity signal into an electric signal, and holographic image processing is performed by the computer; the hologram before and after external force loading is reconstructed to obtain surface topography distribution, and the reconstruction precision is improved through the steps of positive first-order spectrum extraction, angular spectrum reconstruction automatic focusing and the like; the phase difference before and after external force loading is calculated through reconstruction complex amplitude phase extraction, and then the direction and size distribution of the principal stress of the sample are measured and calculated based on a digital photoelastic method and a stress optical law; and the defect of the optical element is identified by measuring the stress value change under the same external force loading, so that the method has important practical significance.

The invention belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a thin-film lithium niobate heterogeneous integrated chip configuration for a fiber-optic gyroscope. The thin-film lithium niobate hybrid photon integrated chip is utilized to realize on-chip heterogeneous integration of functional devices of the fiber-optic gyroscope. The discrete optical path device of the gyroscope is monolithic integrated and integrally packaged, the size and cost of the optical path are greatly reduced, optical fiber interconnection is reduced, the complexity of the assembly process is obviously reduced, and the long-term reliability of the performance of the gyroscope is effectively improved. By means of the CMOS technology with mature silicon photons, low-cost and large-scale batch production of the miniature fiber-optic gyroscope can be achieved, and the requirements for miniaturization and light weight of a future weapon system are met.

A radio frequency to direct current (RF-DC) converter for harvesting radio frequency energy includes an antenna circuit, and a plurality of cross-coupled differential-drive (CCDD) rectifier stage. The antenna circuit receives RF signals and outputs a positive signal at a positive RF terminal and outputs a negative signal output at a negative RF terminal. Each CCDD rectifier stage includes a first NMOS transistor, a first PMOS transistor, a second NMOS transistor and a second PMOS transistor. Each CCDD rectifier stage further includes two flying capacitors and two body capacitors. An input terminal is connected to a connection point between a source terminal of the first NMOS transistor and a source terminal of the second NMOS transistor. An output terminal is connected to a connection point between a source terminal of the first PMOS transistor and a source terminal of the second PMOS transistor.

A system and a method for single-shot compressed optical-streaking ultra-high-speed imaging, the system comprising a spatial encoding module spatially encoding the transient event with a binary pseudo-random pattern into spatially encoded frames; a galvanometer scanner temporally shearing the spatially encoded frames; and a CMOS camera receiving the temporally sheared spatially encoded frames, during one exposure time of the camera, for reconstructing the transient event. The method comprises spatial encoding a transient event; temporal shearing resulting spatially encoded frames of the event, spatio-temporal integration, and reconstruction.

The invention relates to the technical field of refrigeration heat exchanger surface frost treatment, in particular to a machine vision and ultrasonic wave combined frost identifying and removing method. The method comprises the following steps: S1, deploying CCD / CMOS cameras at key points on the surface of the refrigeration heat exchanger to obtain data; s2, processing the data acquired in the step S1; and S3, cooperatively calculating the frosting thickness and area by adopting a Zhang-Suen skeletonization algorithm and an adaptive threshold segmentation algorithm, and judging the frosting level. According to the frost identifying and removing method combining machine vision and ultrasonic waves, ultrasonic defrosting and intelligent control are combined, the defrosting effect is monitored in real time through machine vision, ultrasonic wave parameters are dynamically adjusted, efficient and accurate defrosting is achieved, and the frost identifying and removing method combining machine vision and ultrasonic waves is achieved through multi-technology fusion. The full-automatic process from intelligent frost recognition and accurate positioning to efficient removal is achieved, the intelligent operation and maintenance level of the refrigeration system is greatly improved, manual intervention is reduced, and the operation reliability and stability are improved.

The invention discloses a method for optimizing ion implantation process parameters of an integrated circuit, which comprises the following steps of: simulating a front-end process of a CMOS (Complementary Metal Oxide Semiconductor) device by utilizing Sensor Process of Sensor TCAD (Technology Computer Aided Design) software, and changing process parameters in a Halo ion implantation step to obtain a simulated CMOS device; then, carrying out numerical solution on the electrical property of the simulation CMOS device by utilizing a Sensor Device in the software, so as to obtain electrical data; and training, verifying and testing the residual neural network model by using the process parameters and the electrical data, optimizing parameters of the residual neural network model, and finally obtaining optimized process parameters. The method not only improves the optimization efficiency and precision of the ion implantation process parameters, but also realizes the automation and intelligence of process optimization through the combination of the deep learning algorithm and the TCAD simulation technology.

The invention discloses an edge real-time analysis-oriented sensing and calculation integrated spectrum camera processor system. Efficient edge calculation is realized through collaborative innovation of hardware, an algorithm and an accelerator. A hardware system adopts a three-level board card framework; a core board integrates a programmable logic unit and a processing system, and processes spectral data acquired by a CMOS board in real time; and the interface board accurately controls the power supply time sequence. In the lightweight classification network, the SSFE branch converts frequency domain filtering into cyclic matrix multiplication; carrying out normalization on the HFViT branch by using a batch normalization substitution layer; and an 8-bit full integer quantization strategy compression model is matched, and input spectrum identification characteristics are reserved. Time overlapping scheduling is designed for the accelerator, and SSFE matrix multiplication is executed in parallel in the HFViT calculation window period; the outer product pulsation architecture improves the matrix operation efficiency; and non-linear kernel multiplexing computing resources are unified. The system supports real-time classification of push-scan spectrum data, results are directly connected with sorting equipment, and the edge end embedded deployment requirement is met.

The invention relates to a circuit with a CMOS inverter and a variable resistor (R). fb ), where the variable resistance (R fb ) the entrance (V in ) of the CMOS inverter with the output (V out ) electrically connects the CMOS inverter. The invention also relates to a camera with such a circuit. This makes it possible to realize a circuit that can function both like an analog camera and like a digital camera.

The present application belongs to the technical field of wireless communications and radar systems. Disclosed are a dual-band fusion and multiplexing frequency source, chips, a radio-frequency transceiver, a system, and a device. The system comprises: a full-function millimeter-wave CMOS 4+1 phased array chip, which is connected to an antenna end, and is used for realizing signal processing and frequency conversion between a millimeter-wave signal and a C-band intermediate-frequency signal, performing phase control and gain adjustment on the millimeter-wave signal, and providing an internal frequency source and a calibration function; a C-band front end, which is connected to the antenna end, and is used for receiving or transmitting a C-band signal; a C-band / intermediate-frequency transceiver multiplexing chip, which is used for performing frequency conversion between a C-band or intermediate-frequency signal and a baseband signal in a multiplexing manner, and performing signal processing and gain control on the C-band intermediate-frequency signal; a dual-band fusion and multiplexing frequency source, which is used for providing a local oscillator signal; and an all-digital control logic circuit, which is used for providing a control instruction. The present application improves the efficiency and performance of dual-band joint communications.

The embodiment of the invention provides a manufacturing method of a semiconductor structure, the semiconductor structure and a CMOS (Complementary Metal Oxide Semiconductor) circuit. The manufacturing method of the semiconductor structure comprises the following steps: providing a semiconductor substrate; wherein the semiconductor substrate comprises a semiconductor substrate, and a buffer layer and a stress layer which cover the semiconductor substrate; the semiconductor substrate comprises an NMOS region and a PMOS region; a PMOS gate structure is formed on the surface of the PMOS region; the buffer layer covering the side surface of the PMOS gate structure and the buffer layer covering the surface of the semiconductor substrate form an adjacent region; removing a part of the stress layer covering the PMOS region in the semiconductor substrate, and forming a stress layer residual part on the surface, far away from the semiconductor substrate, of the adjacent region of the buffer layer; executing an ion implantation process in the PMOS region; wherein the region for executing the ion implantation process comprises a stress layer residual part, so that the etching rate of etching the stress layer residual part is increased; and etching to remove the residual part of the stress layer. According to the embodiment of the invention, the overall electrical performance of the CMOS circuit is improved.

Provided is a display device including a CMOS wafer and a light emitting diode disposed on a first area of the CMOS wafer. The light emitting diode includes a first electrode member, an emission layer disposed on the first electrode member, and a second electrode member disposed on a semiconductor junction member. The first electrode member includes a metal layer, a reflective layer disposed on the metal layer, and a first transparent conductive layer disposed on the reflective layer.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.

The invention relates to the technical field of CMOS image training, in particular to a CMOS image data training method, which comprises low-frequency CMOS image data training and high-frequency CMOS image data training. According to low-frequency CMOS image data training, a local clock in an imaging controller is used for carrying out double-edge sampling of a double-edge sampler, the sampling range of a sampling clock on serial image data is widened, and the optimal sampling position is obtained; different sampling point positions are set for the situation that the sampling area is discontinuous due to incomplete coverage of the sampling area in a low-frequency sampling state, so that the influence of temperature drift can be avoided; for high-frequency CMOS image data training, an accompanying clock with the same delay characteristic as serial image data in an imaging detector is used for sampling, and different sampling point positions are set for different sampling states, so that the stability and reliability of system work are ensured.

The invention discloses a hyper-spectral imaging chip, device and system based on an adjustable and reconfigurable metasurface, the chip comprises a metasurface unit array, a metasurface reconstruction module, a metasurface adjustment module, a CMOS image sensor and a spectrum reconstruction and identification module, the metasurface unit array comprises a plurality of metasurface units arranged on a silicon layer; the metasurface reconstruction module is used for adjusting the number of metasurface units included in the reconfigurable metasurface unit array; the metasurface adjusting module is used for being connected with the silicon layer of the metasurface unit array through a wire and changing the spectral response of the metasurface unit by adjusting the voltage of the wire; the CMOS image sensor is used for detecting optical signals modulated by the reconfigurable metasurface unit array; and the spectrum reconstruction and identification module is used for performing hyper-spectrum reconstruction and imaging according to the optical signal detected by the CMOS image sensor. The system is adjustable in spectral response, and has ultrahigh spectral resolution, real-time dynamic monitoring capability and adaptive imaging capability.

The invention provides intelligent code reading equipment based on AI, and relates to the technical field of Internet. The equipment is provided with a shell which is made of an aluminum alloy material and is used for protecting internal vulnerable components; a light source module is arranged at the front end of the device and internally provided with multiple LED lamps with different wavelengths, and the illumination mode can be actively adjusted according to the actual environment requirement. A high-definition CMOS image sensor is used as an image acquisition module to complete image acquisition of a target area; the image processing module is integrated with a high-performance DSP chip, analyzes the original image acquired by the image acquisition module based on an AI algorithm, and outputs a decoding result; the environment sensor detects environment light information in real time and is used for optimizing light source brightness; the control module integrates the functions of each internal module, can command the brightness of the LED lamp according to environmental data, controls the image acquisition and processing process, and finally achieves the quick and accurate decoding of the identification code. According to the scheme, the equipment can intelligently adapt to environment change, and the image quality is improved, so that effective decoding is realized.

Polymers synthesized by solid-phase synthesis are selectively released from a solid support by reversing the bias of spatially addressable electrodes. Change in the current and voltage direction at one or more of the spatially addressable electrodes changes the ionic environment which triggers cleavage of linkers that leads to release of the attached polymers. The spatially addressable electrodes may be implemented as CMOS inverters embedded in an integrated circuit (IC). The IC may contain an array of many thousands of spatially addressable electrodes. Control circuity may independently reverse the bias on any of the individual electrodes in the array. This provides fine-grained control of which polymers are released from the solid support. Examples of polymers that may be synthesized on this type of array include oligonucleotides and peptides.

The invention relates to the technical field of optical elements, systems or instruments, in particular to a temperature field testing method based on combination of colorimetric temperature measurement and multispectral imaging, and solves the technical problems of low temperature field temperature measurement reconstruction precision and low temporal-spatial resolution of an existing temperature measurement method. The method comprises the following steps: determining a spectral range and a temperature measurement range of a temperature field of a solid engine combustion chamber by utilizing an LIBS (Laser-induced Breakdown Spectroscopy) technology, coupling and packaging a multispectral optical filter and a CMOS (Complementary Metal Oxide Semiconductor) sensor, calibrating a multispectral camera by utilizing a blackbody furnace, and acquiring a spectral image of the temperature field by utilizing the multispectral camera. And obtaining a two-dimensional temperature field of the combustion chamber of the solid engine by using a colorimetric temperature measurement method, and performing comprehensive evaluation. According to the invention, multispectral information of the solid propellant combustion chamber flame can be obtained, and high space-time resolution detection of the two-dimensional temperature field of the solid engine combustion chamber is realized.

The invention relates to a method for mechanically regulating and controlling a nerve cell calcium ion signal by using an Airy beam to control an optical bullet, which comprises the following steps: firstly preparing the optical bullet and culturing HT-22 cells, then dynamically regulating and controlling the cell calcium ion signal, and finally monitoring and recording an image in the regulation and control process in real time through a CMOS (Complementary Metal Oxide Semiconductor) camera. According to the method, non-contact mechanical stimulation on nerve cells can be realized. The spatial resolution limitation of the traditional nerve regulation and control technology is broken through, and a non-invasive and high-biocompatibility nerve signal regulation and control means is provided. Besides, in combination with a real-time fluorescence monitoring technology, the regulation and control effect can be intuitively evaluated, and a brand new tool is provided for neuroscience research and clinical application.

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

The invention belongs to the technical field of semiconductor devices, and discloses a diamond-based CMOS (complementary metal oxide semiconductor) inverter and a preparation method thereof. The diamond-based CMOS inverter comprises a diamond substrate, a monocrystalline diamond film, a hydrogen terminal region, a mesa isolation region, an n-type oxide semiconductor layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a first gate dielectric layer, a first gate electrode, a second gate dielectric layer and a second gate electrode. The first drain electrode and the second drain electrode are in metal interconnection; the first gate electrode and the second gate electrode are metal-interconnected. The diamond-based CMOS phase inverter is prepared by combining the p-type hydrogen terminal diamond and the n-type oxide semiconductor, so that the technical problem that an n-type MOS device is difficult to realize by the diamond at present is effectively avoided, respective advantages of the diamond and the n-type oxide semiconductor are fully exerted, and the high-performance diamond-based monolithic integrated CMOS phase inverter is realized.

Provided is a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes: a 1st source / drain region connected to a 1st channel structure; a 2nd source / drain region, above the 1st source / drain region, connected to a 2nd channel structure above the 1st channel structure; a backside contact structure on a bottom surface of the 1st source / drain region; and a backside isolation structure surrounding the backside contact structure, wherein the bottom surface of the 1st source / drain region is at a level below a top surface of the backside isolation structure.

The invention relates to a system and a method for making a colored low-light image. The system for making the color low-light-level image comprises a high-sensitivity CMOS imaging module which is used for enhancing the photon collection capability and reducing the noise level to complete imaging; the image enhancement processing module adopts a histogram equalization algorithm and comprises the steps of calculating a gray histogram of the original image, calculating a cumulative distribution function according to the gray histogram and performing gray mapping to obtain an enhanced gray value; the image noise reduction processing module is used for carrying out noise reduction on the image after enhancement processing, and filtering is carried out by adopting a night image noise reduction technology, a bilateral filtering method including spatial domain noise reduction and a band-pass filter including frequency domain noise reduction; and the colorful low-light-level image generation module obtains a colorful low-light-level night vision image by adopting an interpolation algorithm and makes a colorful low-light-level image. According to the system and the method for manufacturing the colored low-light-level image, special equipment is not depended on, the imaging quality of the colored low-light-level image can be improved, and the colored low-light-level image can be manufactured.

The invention relates to a laser galvanometer detection system with temperature drift self-detection and correction functions. The laser galvanometer detection system comprises an error judgment module and an error calibration module, the error judgment module comprises a CMOS image sensing module, a visual detection module and a storage module; the error calibration module comprises a calibration module and a laser marking module; the CMOS image sensing module is used for shooting a high-definition image, and the visual detection module can generate a prediction image and perform deviation identification on the image shot by the CMOS image sensing module. According to the invention, the temperature drift error is automatically detected through real-time detection of the position drift error of each visual single detection area in the galvanometer processing breadth, and each visual single detectable area is detected one by one to form an adjacent array, so that the temperature drift error detection of the whole processing breadth is realized; and comparing the difference between'theoretical due 'and'actual existing' through an intelligent algorithm so as to detect, compensate and correct the error in real time.