61 results about "Vertical channel" patented technology

The invention belongs to the technical field of gravity energy storage, and particularly relates to a high-channel-utilization-rate gravity energy storage system based on vertical circulation operation, which comprises at least one energy conversion shaft, at least one empty return shaft, a top shaft transfer section and a bottom shaft transfer section, the top hoistway transfer section is communicated with the upper part of the energy conversion hoistway or the empty return hoistway through reciprocating translational motion, and the bottom hoistway transfer section is communicated with the lower part of the energy conversion hoistway or the empty return hoistway through reciprocating translational motion; racks are arranged on the inner walls of the hoistways, gears are arranged on the elevator, and the racks and the gears are meshed to achieve movement of the elevator in the circulating hoistways. Compared with an existing steel wire rope or chain annular conveying chain scheme, the conveying load is transferred to different heights of the vertical channel well wall in a distributed mode, the bottom and top horizontal transverse moving mechanism and the vertical load are transferred to a horizontal wheel rail, the conveying capacity is higher, the service life is longer and more reliable compared with a traditional circulating conveying chain cable, and the later operation and maintenance cost is reduced.

A plurality of supporting layers are arranged on a supporting assembly in a sole buffering supporting structure in the vertical direction, an arrangement direction and a channel direction which are perpendicular to each other are defined for each supporting layer, and each supporting layer is provided with a plurality of supporting channels which are sequentially arranged in the arrangement direction. The supporting channels located in the same supporting layer extend in the channel direction. The adjacent supporting layers are communicated with each other, the corresponding arrangement directions of the supporting layers are perpendicular to each other, and the channel directions are also perpendicular to each other; a protruding supporting platform is formed in the middle of the top of the supporting assembly through a supporting layer, and a cushioning table top lower than the supporting platform is formed on the peripheral side of the supporting platform. The outer wall covers the periphery of the supporting assembly so as to seal the supporting assembly to form a closed air cavity. The sole buffering and supporting structure can provide a better buffering effect and improve the wearing comfort.

The invention provides a multichannel SIW filtering jumper and a communication device, and belongs to the technical field of filtering jumpers. The multichannel SIW filtering jumper comprises m * n SIW rectangular dual-mode resonant cavities which are arranged in m rows and n columns and work in a TE102 and TE201 orthogonal degenerate mode, m > 0, and n > 0; each row of SIW rectangular dual-mode resonant cavities corresponds to a horizontal channel, each column of SIW rectangular dual-mode resonant cavities corresponds to a vertical channel, two adjacent SIW rectangular dual-mode resonant cavities are coupled through a common wall, and a coupling window is located in a weakest electric field area of any one of the SIW rectangular dual-mode resonant cavities. According to the multichannel SIW filtering jumper, the number of channels and the working center frequency, the working bandwidth, the working order and the transmission zero point of each channel can be independently set.

The disclosure provides a kind of high viscosity microdroplet generation device and method based on three-dimensional microchannel structure, which is T-shaped, including first straight channel, vertical channel, second straight channel and third straight channel in turn;A group of boss structures are symmetrically provided inside the second straight channel near the two sides of the inner wall of the main channel, and the outer end face of the microtube can abut with the outer end face of the boss structure after extending into the vertical channel, so that high viscosity microdroplet generation channel is formed between the two boss structures;The connecting part of high viscosity microdroplet generation channel and third straight channel also forms a tapered channel, and high viscosity microdroplets are stably output from the third straight channel through the tapered channel;The present application designs a new tip mode, realizes the high monodispersity and uniformity of high viscosity microdroplets, size controllable, improves the stability of high viscosity microdroplet generation, and can be repeatedly used based on the detachable design of three-dimensional microchannel structure, which expands the application range of the technology.

The present disclosure is directed to semiconductor packages incorporating composite or hybrid bridges that include first and second interconnect bridges positioned on a substrate and a power corridor with a plurality of vertical channels positioned on the substrate between the first and second interconnect bridges, wherein the power corridor integrally joins the first interconnect bridge to the second interconnect bridge.

Semiconductor device (200), comprising: a first plurality of GAA devices (250), gate-all-around devices, in a first device surface (10), each of the first plurality of GAA devices (250) comprising: a first vertical stack of channel elements (239-1) extending along a first direction, and a first plurality of inner spacers (230) which are nested with the first vertical stack of channel elements (239-1), a first gate structure (224A, 244B) above and around the first vertical stack of channel elements (239-1); and a second plurality of GAA devices (260) in a second device surface (20), each of the second plurality of GAA devices (260) comprising: a second vertical stack of channel elements (239-2) extending along a second direction, and a second plurality of inner spacers (230) which are nested with the second vertical stack of channel elements (239-2), a second gate structure (224C, 244D) above and around the second vertical stack of channel elements (239-2), wherein each of the first plurality of GAA devices (250) has a first channel length, wherein each of the second set of GAA devices (260) has a second channel length that is smaller than the first channel length, wherein the first plurality of inner spacers (230) and the second plurality of inner spacers (230) extend inwards to substantially the same extent; where each of the first gate structures (224A, 244B) has: a first upper gate feature (244A) arranged above a topmost channel element (239) of the first vertical stack of channel elements (239-1), and a plurality of first lower gate features (244B) arranged between two adjacent channel elements (239) of the first vertical stack of channel elements (239-1), where each of the second gate structures (224C, 244D) has: a second upper gate feature (244C) arranged above a topmost channel element (239) of the second vertical stack of channel elements (239-2), and a plurality of second lower gate features (244D) arranged between two adjacent channel elements (239) of the second vertical stack of channel elements (239-2), wherein the first upper gate feature (244A) has a first length (L1) along the first direction, wherein the second upper gate feature (244C) has a second length (L3) along the second direction, where the first length (L1) and the second length (L3) are essentially identical.

A retention substrate includes: a plate-shaped member having a first surface and a second surface and containing a ceramic material as a main component, the first surface for retaining an object, the second surface disposed opposite to the first surface; a gas channel formed in the plate-shaped member; and a gas-permeable porous body filling part of the gas channel and containing a ceramic material as a main component. The gas channel including a vertical channel section and a horizontal channel section. The vertical channel section having a gas outlet opening in the first surface and extending from the gas outlet toward the second surface. The horizontal channel section connected to the vertical channel section and extending parallel to the first surface. The porous body filling the vertical channel section and forming a space adjacent to the second surface and inside the horizontal channel section.

A microelectronic device includes a memory array structure, an additional memory array structure, and a control circuitry structure. The memory array structure includes memory cells respectively including a vertical channel access device and a storage node device coupled to the vertical channel access device. The additional memory array structure vertically overlies the memory array structure and includes additional memory cells respectively including an additional vertical channel access device and an additional storage node device coupled to the additional vertical channel access device. The control circuitry structure vertically overlies and is bonded to one or more of the memory array structure and the additional memory array structure. The control circuitry structure includes control logic circuitry coupled to the memory cells of the memory array structure and the additional memory cells of the additional memory array structure. Related memory devices and electronic systems are also described.

The utility model discloses a winding chuck and clamping equipment. The winding chuck comprises a base, a pushing assembly, a jacking head assembly and a limiting piece. The base is provided with a channel penetrating through the two opposite ends of the base and a sliding way in the axial direction perpendicular to the channel, and the sliding way is communicated with the channel and penetrates through the side wall of the base. The propelling assembly is assembled in the channel and is in sliding connection with the base; the ejector head assembly is assembled in the slide way, slidably connected with the base and contacted with the propelling assembly, and the propelling assembly is used for pushing the ejector head assembly to slide and extend out of the slide way; the limiting piece is connected with the base and blocks the end, close to the ejector head assembly, of the channel. The pushing assembly does not need to be broken due to the fact that the pushing force of the driving piece is too large. The pushing assembly and the top head assembly are in direct contact pushing and are convenient to replace and maintain. The limiting piece at the bottom of the base can limit further movement of the propelling assembly, and therefore the situation that the propelling assembly breaks away from the channel, and the clamping function of the winding chuck fails is prevented.

A frame structure for an electronic equipment enclosure includes vertical frame members and horizontal frame members arranged to form rear and front frames connected together via horizontal front-to-back members. At least one of the vertical frame members includes a closed profile and a vertical channel extending a length thereof for providing access to an adjustment assembly of a leveling foot. The adjustment assembly is positioned within the vertical channel and outside of the closed profile. At least one of the horizontal frame or front-to-back members is a structural member having a closed profile that includes at least one T-slot channel and at least one recessed groove extending a length thereof. The at least one recessed groove includes a row of mounting apertures arranged therein.

The present invention discloses a semiconductor structure. The semiconductor structure includes a channel element. The channel element includes a substrate portion and a vertical channel portion. The vertical channel portion is adjacent to the substrate portion. Both the substrate portion and the vertical channel portion include single crystal silicon.

The invention discloses a control method, a base station, a storage medium and a computer program product, the base station comprises an active antenna unit (AAU), the AAU comprises a first antenna array plane used for communication and perceptual emission and a second antenna array plane used for perceptual reception, the first antenna array plane and the second antenna array plane are respectively provided with a plurality of vertical channels, and the vertical channels are communicated with the AAU. The arrangement number of the vertical channels is set based on a communication scene demand and / or a perception control demand, and the method comprises the step of controlling the opening number of the vertical channels in the first antenna array plane and the second antenna array plane based on a perception receiving signal-to-noise ratio when working in a perception continuous wave mode.

The invention provides a laser radar satellite inversion method and system for optical parameters of background aerosol, and the method comprises the steps: carrying out the preprocessing of satellite-borne laser radar calibration data, and obtaining a vertical channel signal, a parallel channel signal and a hyperspectral channel signal of the background aerosol; performing day and night backscattering coefficient inversion on the vertical channel signal, the parallel channel signal and the hyperspectral channel signal by adopting different denoising strategies to obtain a night backscattering coefficient and a final backscattering coefficient; performing noise reduction processing on the accumulated atmospheric optical thickness corresponding to the night signal to obtain a night extinction coefficient; constructing a laser radar ratio climate field according to the night backscattering coefficient and the night extinction coefficient; and multiplying the climate field by the final backscattering coefficient through the laser radar to obtain a final extinction coefficient. By introducing an innovative multi-scale denoising and systematic deviation correction technology, the low signal-to-noise ratio challenge is effectively overcome, and the inversion precision is remarkably improved.

The invention provides a semiconductor element and a preparation method thereof. The semiconductor device includes a bit line extending along a first direction; the first word line extends along a second direction and is arranged above the bit line; and a second word line extending along the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.

This invention provides a memory device including a stacked structure, a vertical channel post, a first plug, and a second plug. The stacked structure includes multiple insulating layers and multiple conductive layers stacked alternately. The vertical channel post extends vertically through the stacked structure, and each vertical channel post includes an insulating post, a channel layer surrounding the insulating post, and a charge storage structure surrounding the channel layer. The first plug and the second plug are disposed on opposite sides of the insulating post and are connected to the channel layer. In a top view, the distance between the center of the first plug and the center of the second plug is greater than the radius of the vertical channel post.

The invention discloses a freezing crystallization system, relates to the technical field of freezing crystallization, and aims to solve the technical problem that seed crystal sinks to the bottom during freezing crystallization. Seed crystal is input into a sowing sheet through a transmission assembly and a torsion assembly, and is thrown out by an inclined ramp through a vertical channel due to centrifugal force; in this way, the seed crystal can be more uniformly dispersed in the solution, and the contact area between the seed crystal and a solute in the solution is greatly increased, so that the nucleation process of crystallization is effectively promoted, and the crystallization efficiency is remarkably improved. Meanwhile, when the sowing sheet is immersed into a solution, the floating ball in the ball cavity floats upwards, the floating ball is firstly thrown into the inclined ramp by centrifugal force, and the narrow opening is blocked by the floating ball, so that seed crystal is prevented from sinking to the bottom. The seed crystal is ensured to be always located at a proper position in the solution, the effect of promoting crystallization is continuously exerted, the stability of the crystallization process is ensured, and the product quality is further improved.

A temporary building or structure includes one or more wall segments. The one or more wall segments include a first upright post, a second upright post, a first channel member on the first upright post and defining a first vertical channel, and a second channel member on the second upright post and defining a second vertical channel. The wall segment additionally includes a first horizontal row extending between the first and second vertical channels and including a first wall panel and a plenum. The wall segment includes a second horizontal row above or below the first horizontal row and extending between the first and second vertical channels. The second horizontal row includes a second wall panel.

A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.

A semiconductor memory device may be provided. The semiconductor memory device may include a bit line, a channel pattern on the bit line, the channel pattern including a horizontal channel portion, which is provided on the bit line, and a vertical channel portion, which is vertically extended from the horizontal channel portion, a word line provided on the channel pattern to cross the bit line, the word line including a horizontal portion, which is provided on the horizontal channel portion, and a vertical portion, which is vertically extended from the horizontal portion to face the vertical channel portion, and a gate insulating pattern provided between the channel pattern and the word line.

The invention discloses a vertical channel structure of a magnetic suspension rail transit bridge, and relates to the technical field of magnetic suspension bridge accessory engineering, the vertical channel structure comprises a channel foundation, a curtain board and an evacuation staircase, the channel foundation comprises a plurality of pile foundations and a foundation, and the pile foundations are jointly connected with the foundation; the foundation is connected with two symmetrically-distributed separating type stand columns in the transverse bridge direction through embedded steel bars, embedded parts are arranged in the separating type stand columns, a space is reserved between the two separating type stand columns in advance, evacuation stairs are installed in the reserved space, and a magnetic levitation uplink and a magnetic levitation downlink are arranged at the top ends of the two separating type stand columns respectively. Rail structures are arranged in the maglev ascending line and the maglev descending line, under the daily condition, maintainers can reach the bridge floor through the evacuation stairs to conduct maintenance operation, passengers can reach the vertical channel from the interval evacuation platform to rapidly get off the bridge in the emergency condition, and on the basis that passenger evacuation and maintainer passing are met, the maintenance efficiency is greatly improved. And the arrangement requirements of maglev trains and equipment can also be met.

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having vertically oriented access devices having a first source / drain region and a second source drain region vertically separated by a channel region, and gates opposing the channel region, vertically oriented access lines coupled to the gates and separated from a channel region by a gate dielectric. The memory cells have horizontally oriented storage nodes coupled to the first source / drain region and horizontally oriented digit lines coupled to the second source / drain regions.

The application discloses a sole cushioning support structure and a sole. The support assembly in the sole cushioning support structure is arranged with a plurality of support layers in the up-down direction. For each support layer, a mutually perpendicular arrangement direction and a channel direction are defined. Each support layer is provided with a plurality of support channels arranged in sequence along the arrangement direction. Each support channel in the same support layer extends along the channel direction. Adjacent support layers are in communication with each other, and the corresponding arrangement directions of each other are mutually perpendicular, and the channel directions are also mutually perpendicular. The top middle position of the support assembly is formed with a protruding support platform by the support layers, and a cushioning platform lower than the support platform is formed on the peripheral side of the support platform. An outer wall covers the outer periphery of the support assembly to enclose the support assembly and form a sealed air chamber. The sole cushioning support structure can provide better cushioning effect and improve wearing comfort.

The invention provides a nanosheet lithium ion sieve electrode with a vertical channel structure, a membrane capacitor assembly and a preparation method and application of the nanosheet lithium ion sieve electrode and the membrane capacitor assembly, and belongs to the technical field of lithium extraction. The preparation method comprises the following steps: synthesizing a precursor by adopting a hydrothermal method, carrying out ion exchange treatment, carrying out one-way freezing treatment and carrying out a programmed temperature control freeze-drying process to construct the electrode. According to the method, controllable preparation of a nanosheet vertical channel structure is successfully realized, and the problems that in the prior art, the specific recognition capability of an electrode material on lithium ions is insufficient, the lithium ions cannot be effectively separated from a complex system containing interference ions such as high-concentration sodium, magnesium and calcium, the material utilization rate is low, and the separation efficiency is low are solved; the method is applied to industrial recovery of complex low-concentration lithium resources such as salt lake raw brine and waste battery leachate.

This invention relates to the technical field of winch drum processing, and discloses a drying device and its control system and process for digital processing of winch drums. The device includes a guide frame assembly, which consists of vertical columns, horizontal columns, and L-shaped columns, forming vertical and horizontal channels. The device also includes a swing assembly, a buffer assembly, a tilting mechanism, and an intelligent drying control system. The swing assembly drives the drum to swing up and down via an irregular turntable, promoting the ejection of cutting fluid and the penetration of hot air. The tilting mechanism synchronously tilts the drum during descent. The intelligent drying control system includes a central control unit, various sensors, an adjustable hot air generator, and a touchscreen display, enabling real-time monitoring and parameter optimization. The process flow includes placing the drum on top of the vertical columns, allowing it to automatically fall into the vertical channel, initiating hot air drying, passing through the vertical channel into the horizontal channel, and finally being positioned within a positioning groove.

The invention provides a DRAM (Dynamic Random Access Memory) storage unit structure and a preparation method thereof. The DRAM storage unit structure comprises a substrate, a word line, a bit line, a plurality of vertical channel transistors and capacitor units positioned below the vertical channel transistors, the capacitor unit is located on the substrate and vertically extends into the substrate; a source region, a gate region and a drain region of the vertical channel transistor are sequentially arranged from top to bottom, and the capacitor unit is connected below the drain region; the word line is connected with the gate regions of the at least two vertical channel transistors, and the bit line is connected with the source regions of the at least two vertical channel transistors. According to the invention, the fringe effect is reduced to the greatest extent, subsequent integration with peripheral circuits is facilitated, and the overall performance of the device is improved.

Provided are a feature encoding / decoding method and device, a recording medium on which a bitstream generated by the feature encoding method is stored, and a method for transmitting the bitstream. The feature decoding method according to the present disclosure comprises the steps of obtaining vertical channel information related to vertical-direction channels and horizontal channel information related to horizontal-direction channels in a feature map; identifying channel boundaries in the feature map on the basis of the vertical channel information and the horizontal channel information; and decoding the feature map on the basis of the channel boundaries, wherein the vertical channel information includes either first information related to the boundaries of the vertical-direction channels or second information related to the number of vertical-direction channels, and the horizontal channel information can include either third information related to the boundaries of the horizontal-direction channels or fourth information related to the number of horizontal-direction channels.

The utility model relates to the technical field of material distribution equipment, and discloses a multi-path branch bunker coal bucket which comprises a coal bucket body, the coal bucket body is of a big-end-up bucket-shaped structure, the lower end face of the coal bucket body is provided with a first discharge port, the first discharge port is divided into N areas, and N sub discharge ports are formed; and the N sub discharge ports are connected with coal bucket split bodies in a one-to-one correspondence mode, second discharge ports are formed in the lower end faces of the coal bucket split bodies, and the second discharge ports are located in the middles of projection coverage areas of the corresponding sub discharge ports, so that the coal bucket split bodies are vertically arranged in the gravity direction. The coal bucket is vertically arranged along the gravity direction, the internal channel of the coal bucket is consistent with the natural falling direction of materials, and gravitational potential energy can be effectively utilized to realize self-flow conveying of the materials. According to the vertical channel structure, the friction contact area between the materials and the inner walls of the split bodies is reduced, the phenomenon that the materials are detained or slide insufficiently due to angle deviation of a traditional inclined material distributing structure is avoided, and therefore the overall conveying efficiency is improved.

Provided is a memory device with a vertical channel structure. The memory device includes a memory cell array including a plurality of memory cells and a plurality of string selection lines, a negative charge pump configured to generate a bias voltage of a negative level, to be applied to at least one of the plurality of string selection lines, and a control logic circuit configured to apply, for a first period, a prepulse voltage to at least one unselected string selection line among the plurality of string selection lines excluding a selected string selection line to which a memory cell selected from among the plurality of memory cells is connected and thereafter apply the bias voltage to the at least one unselected string selection line so as to perform a read operation on the selected memory cell.

The utility model discloses a tool type connecting node for a vertical channel wall connecting piece of a steel structure outer wall, which comprises a back plate, a grab hook piece, a conversion piece and a round pipe connecting piece which are sequentially arranged from the inner side of the steel structure outer wall to the outside, the conversion piece is used as a wall penetrating part, the section size is small, damage to an original metal wall body plate can be reduced as much as possible, the later repair difficulty is low, and the service life is long. Every two adjacent components are connected through bolts, mounting and dismounting are convenient, the material turnover utilization rate is improved, long-circle-shaped mounting holes are formed in the back plate, the positions, aligned with the mounting holes, of circular holes of the grabbing hook pieces are adjusted according to the widths of different steel columns and the mounting requirements, and therefore the unfolding widths of the grabbing hook pieces on the two sides of the back plate are adjusted, and then the grabbing hook pieces are fastened through first bolts; the new distance between the hook grooves in the two sides of the fixed vertical plate can be suitable for different project structure types and adapt to more application scenes.

A three-dimensional semiconductor device may include a substrate including a cell array region and a contact region, a stack structure including interlayer dielectric layers and gate electrodes, a source structure, and a mold structure between the substrate and the stack structure. First vertical channel structures are on the cell array region in vertical channel holes. Each of the first vertical channel structures may include a first barrier pattern, a data storage pattern, and a vertical semiconductor pattern, which are sequentially layered on an inner side surface of one of the vertical channel holes. The mold structure may include a first buffer insulating layer, a first semiconductor layer, a second buffer insulating layer, and a second semiconductor layer sequentially stacked on the substrate. The source structure may be in physical contact with a portion of a side surface of the vertical semiconductor pattern.