43 results about "Vertical channel" patented technology

The invention provides a multichannel SIW filtering jumper and a communication device, and belongs to the technical field of filtering jumpers. The multichannel SIW filtering jumper comprises m * n SIW rectangular dual-mode resonant cavities which are arranged in m rows and n columns and work in a TE102 and TE201 orthogonal degenerate mode, m > 0, and n > 0; each row of SIW rectangular dual-mode resonant cavities corresponds to a horizontal channel, each column of SIW rectangular dual-mode resonant cavities corresponds to a vertical channel, two adjacent SIW rectangular dual-mode resonant cavities are coupled through a common wall, and a coupling window is located in a weakest electric field area of any one of the SIW rectangular dual-mode resonant cavities. According to the multichannel SIW filtering jumper, the number of channels and the working center frequency, the working bandwidth, the working order and the transmission zero point of each channel can be independently set.

The disclosure provides a kind of high viscosity microdroplet generation device and method based on three-dimensional microchannel structure, which is T-shaped, including first straight channel, vertical channel, second straight channel and third straight channel in turn;A group of boss structures are symmetrically provided inside the second straight channel near the two sides of the inner wall of the main channel, and the outer end face of the microtube can abut with the outer end face of the boss structure after extending into the vertical channel, so that high viscosity microdroplet generation channel is formed between the two boss structures;The connecting part of high viscosity microdroplet generation channel and third straight channel also forms a tapered channel, and high viscosity microdroplets are stably output from the third straight channel through the tapered channel;The present application designs a new tip mode, realizes the high monodispersity and uniformity of high viscosity microdroplets, size controllable, improves the stability of high viscosity microdroplet generation, and can be repeatedly used based on the detachable design of three-dimensional microchannel structure, which expands the application range of the technology.

The present disclosure is directed to semiconductor packages incorporating composite or hybrid bridges that include first and second interconnect bridges positioned on a substrate and a power corridor with a plurality of vertical channels positioned on the substrate between the first and second interconnect bridges, wherein the power corridor integrally joins the first interconnect bridge to the second interconnect bridge.

Semiconductor device (200), comprising: a first plurality of GAA devices (250), gate-all-around devices, in a first device surface (10), each of the first plurality of GAA devices (250) comprising: a first vertical stack of channel elements (239-1) extending along a first direction, and a first plurality of inner spacers (230) which are nested with the first vertical stack of channel elements (239-1), a first gate structure (224A, 244B) above and around the first vertical stack of channel elements (239-1); and a second plurality of GAA devices (260) in a second device surface (20), each of the second plurality of GAA devices (260) comprising: a second vertical stack of channel elements (239-2) extending along a second direction, and a second plurality of inner spacers (230) which are nested with the second vertical stack of channel elements (239-2), a second gate structure (224C, 244D) above and around the second vertical stack of channel elements (239-2), wherein each of the first plurality of GAA devices (250) has a first channel length, wherein each of the second set of GAA devices (260) has a second channel length that is smaller than the first channel length, wherein the first plurality of inner spacers (230) and the second plurality of inner spacers (230) extend inwards to substantially the same extent; where each of the first gate structures (224A, 244B) has: a first upper gate feature (244A) arranged above a topmost channel element (239) of the first vertical stack of channel elements (239-1), and a plurality of first lower gate features (244B) arranged between two adjacent channel elements (239) of the first vertical stack of channel elements (239-1), where each of the second gate structures (224C, 244D) has: a second upper gate feature (244C) arranged above a topmost channel element (239) of the second vertical stack of channel elements (239-2), and a plurality of second lower gate features (244D) arranged between two adjacent channel elements (239) of the second vertical stack of channel elements (239-2), wherein the first upper gate feature (244A) has a first length (L1) along the first direction, wherein the second upper gate feature (244C) has a second length (L3) along the second direction, where the first length (L1) and the second length (L3) are essentially identical.

A retention substrate includes: a plate-shaped member having a first surface and a second surface and containing a ceramic material as a main component, the first surface for retaining an object, the second surface disposed opposite to the first surface; a gas channel formed in the plate-shaped member; and a gas-permeable porous body filling part of the gas channel and containing a ceramic material as a main component. The gas channel including a vertical channel section and a horizontal channel section. The vertical channel section having a gas outlet opening in the first surface and extending from the gas outlet toward the second surface. The horizontal channel section connected to the vertical channel section and extending parallel to the first surface. The porous body filling the vertical channel section and forming a space adjacent to the second surface and inside the horizontal channel section.

A microelectronic device includes a memory array structure, an additional memory array structure, and a control circuitry structure. The memory array structure includes memory cells respectively including a vertical channel access device and a storage node device coupled to the vertical channel access device. The additional memory array structure vertically overlies the memory array structure and includes additional memory cells respectively including an additional vertical channel access device and an additional storage node device coupled to the additional vertical channel access device. The control circuitry structure vertically overlies and is bonded to one or more of the memory array structure and the additional memory array structure. The control circuitry structure includes control logic circuitry coupled to the memory cells of the memory array structure and the additional memory cells of the additional memory array structure. Related memory devices and electronic systems are also described.

The utility model discloses a winding chuck and clamping equipment. The winding chuck comprises a base, a pushing assembly, a jacking head assembly and a limiting piece. The base is provided with a channel penetrating through the two opposite ends of the base and a sliding way in the axial direction perpendicular to the channel, and the sliding way is communicated with the channel and penetrates through the side wall of the base. The propelling assembly is assembled in the channel and is in sliding connection with the base; the ejector head assembly is assembled in the slide way, slidably connected with the base and contacted with the propelling assembly, and the propelling assembly is used for pushing the ejector head assembly to slide and extend out of the slide way; the limiting piece is connected with the base and blocks the end, close to the ejector head assembly, of the channel. The pushing assembly does not need to be broken due to the fact that the pushing force of the driving piece is too large. The pushing assembly and the top head assembly are in direct contact pushing and are convenient to replace and maintain. The limiting piece at the bottom of the base can limit further movement of the propelling assembly, and therefore the situation that the propelling assembly breaks away from the channel, and the clamping function of the winding chuck fails is prevented.

A frame structure for an electronic equipment enclosure includes vertical frame members and horizontal frame members arranged to form rear and front frames connected together via horizontal front-to-back members. At least one of the vertical frame members includes a closed profile and a vertical channel extending a length thereof for providing access to an adjustment assembly of a leveling foot. The adjustment assembly is positioned within the vertical channel and outside of the closed profile. At least one of the horizontal frame or front-to-back members is a structural member having a closed profile that includes at least one T-slot channel and at least one recessed groove extending a length thereof. The at least one recessed groove includes a row of mounting apertures arranged therein.

The invention discloses a control method, a base station, a storage medium and a computer program product, the base station comprises an active antenna unit (AAU), the AAU comprises a first antenna array plane used for communication and perceptual emission and a second antenna array plane used for perceptual reception, the first antenna array plane and the second antenna array plane are respectively provided with a plurality of vertical channels, and the vertical channels are communicated with the AAU. The arrangement number of the vertical channels is set based on a communication scene demand and / or a perception control demand, and the method comprises the step of controlling the opening number of the vertical channels in the first antenna array plane and the second antenna array plane based on a perception receiving signal-to-noise ratio when working in a perception continuous wave mode.

The invention provides a laser radar satellite inversion method and system for optical parameters of background aerosol, and the method comprises the steps: carrying out the preprocessing of satellite-borne laser radar calibration data, and obtaining a vertical channel signal, a parallel channel signal and a hyperspectral channel signal of the background aerosol; performing day and night backscattering coefficient inversion on the vertical channel signal, the parallel channel signal and the hyperspectral channel signal by adopting different denoising strategies to obtain a night backscattering coefficient and a final backscattering coefficient; performing noise reduction processing on the accumulated atmospheric optical thickness corresponding to the night signal to obtain a night extinction coefficient; constructing a laser radar ratio climate field according to the night backscattering coefficient and the night extinction coefficient; and multiplying the climate field by the final backscattering coefficient through the laser radar to obtain a final extinction coefficient. By introducing an innovative multi-scale denoising and systematic deviation correction technology, the low signal-to-noise ratio challenge is effectively overcome, and the inversion precision is remarkably improved.

The invention provides a semiconductor element and a preparation method thereof. The semiconductor device includes a bit line extending along a first direction; the first word line extends along a second direction and is arranged above the bit line; and a second word line extending along the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.

This invention provides a memory device including a stacked structure, a vertical channel post, a first plug, and a second plug. The stacked structure includes multiple insulating layers and multiple conductive layers stacked alternately. The vertical channel post extends vertically through the stacked structure, and each vertical channel post includes an insulating post, a channel layer surrounding the insulating post, and a charge storage structure surrounding the channel layer. The first plug and the second plug are disposed on opposite sides of the insulating post and are connected to the channel layer. In a top view, the distance between the center of the first plug and the center of the second plug is greater than the radius of the vertical channel post.

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having vertically oriented access devices having a first source / drain region and a second source drain region vertically separated by a channel region, and gates opposing the channel region, vertically oriented access lines coupled to the gates and separated from a channel region by a gate dielectric. The memory cells have horizontally oriented storage nodes coupled to the first source / drain region and horizontally oriented digit lines coupled to the second source / drain regions.

The application discloses a sole cushioning support structure and a sole. The support assembly in the sole cushioning support structure is arranged with a plurality of support layers in the up-down direction. For each support layer, a mutually perpendicular arrangement direction and a channel direction are defined. Each support layer is provided with a plurality of support channels arranged in sequence along the arrangement direction. Each support channel in the same support layer extends along the channel direction. Adjacent support layers are in communication with each other, and the corresponding arrangement directions of each other are mutually perpendicular, and the channel directions are also mutually perpendicular. The top middle position of the support assembly is formed with a protruding support platform by the support layers, and a cushioning platform lower than the support platform is formed on the peripheral side of the support platform. An outer wall covers the outer periphery of the support assembly to enclose the support assembly and form a sealed air chamber. The sole cushioning support structure can provide better cushioning effect and improve wearing comfort.

The invention provides a nanosheet lithium ion sieve electrode with a vertical channel structure, a membrane capacitor assembly and a preparation method and application of the nanosheet lithium ion sieve electrode and the membrane capacitor assembly, and belongs to the technical field of lithium extraction. The preparation method comprises the following steps: synthesizing a precursor by adopting a hydrothermal method, carrying out ion exchange treatment, carrying out one-way freezing treatment and carrying out a programmed temperature control freeze-drying process to construct the electrode. According to the method, controllable preparation of a nanosheet vertical channel structure is successfully realized, and the problems that in the prior art, the specific recognition capability of an electrode material on lithium ions is insufficient, the lithium ions cannot be effectively separated from a complex system containing interference ions such as high-concentration sodium, magnesium and calcium, the material utilization rate is low, and the separation efficiency is low are solved; the method is applied to industrial recovery of complex low-concentration lithium resources such as salt lake raw brine and waste battery leachate.

This invention relates to the technical field of winch drum processing, and discloses a drying device and its control system and process for digital processing of winch drums. The device includes a guide frame assembly, which consists of vertical columns, horizontal columns, and L-shaped columns, forming vertical and horizontal channels. The device also includes a swing assembly, a buffer assembly, a tilting mechanism, and an intelligent drying control system. The swing assembly drives the drum to swing up and down via an irregular turntable, promoting the ejection of cutting fluid and the penetration of hot air. The tilting mechanism synchronously tilts the drum during descent. The intelligent drying control system includes a central control unit, various sensors, an adjustable hot air generator, and a touchscreen display, enabling real-time monitoring and parameter optimization. The process flow includes placing the drum on top of the vertical columns, allowing it to automatically fall into the vertical channel, initiating hot air drying, passing through the vertical channel into the horizontal channel, and finally being positioned within a positioning groove.

The invention provides a DRAM (Dynamic Random Access Memory) storage unit structure and a preparation method thereof. The DRAM storage unit structure comprises a substrate, a word line, a bit line, a plurality of vertical channel transistors and capacitor units positioned below the vertical channel transistors, the capacitor unit is located on the substrate and vertically extends into the substrate; a source region, a gate region and a drain region of the vertical channel transistor are sequentially arranged from top to bottom, and the capacitor unit is connected below the drain region; the word line is connected with the gate regions of the at least two vertical channel transistors, and the bit line is connected with the source regions of the at least two vertical channel transistors. According to the invention, the fringe effect is reduced to the greatest extent, subsequent integration with peripheral circuits is facilitated, and the overall performance of the device is improved.

Provided are a feature encoding / decoding method and device, a recording medium on which a bitstream generated by the feature encoding method is stored, and a method for transmitting the bitstream. The feature decoding method according to the present disclosure comprises the steps of obtaining vertical channel information related to vertical-direction channels and horizontal channel information related to horizontal-direction channels in a feature map; identifying channel boundaries in the feature map on the basis of the vertical channel information and the horizontal channel information; and decoding the feature map on the basis of the channel boundaries, wherein the vertical channel information includes either first information related to the boundaries of the vertical-direction channels or second information related to the number of vertical-direction channels, and the horizontal channel information can include either third information related to the boundaries of the horizontal-direction channels or fourth information related to the number of horizontal-direction channels.

The utility model relates to the technical field of material distribution equipment, and discloses a multi-path branch bunker coal bucket which comprises a coal bucket body, the coal bucket body is of a big-end-up bucket-shaped structure, the lower end face of the coal bucket body is provided with a first discharge port, the first discharge port is divided into N areas, and N sub discharge ports are formed; and the N sub discharge ports are connected with coal bucket split bodies in a one-to-one correspondence mode, second discharge ports are formed in the lower end faces of the coal bucket split bodies, and the second discharge ports are located in the middles of projection coverage areas of the corresponding sub discharge ports, so that the coal bucket split bodies are vertically arranged in the gravity direction. The coal bucket is vertically arranged along the gravity direction, the internal channel of the coal bucket is consistent with the natural falling direction of materials, and gravitational potential energy can be effectively utilized to realize self-flow conveying of the materials. According to the vertical channel structure, the friction contact area between the materials and the inner walls of the split bodies is reduced, the phenomenon that the materials are detained or slide insufficiently due to angle deviation of a traditional inclined material distributing structure is avoided, and therefore the overall conveying efficiency is improved.

The invention relates to a vertical channel structure of a low-voltage drawer cabinet, and belongs to the technical field of electrical equipment. According to the structure, a function plate is arranged on the face, facing the interior of the cabinet, of a vertical row set, splicing modules for isolating adjacent vertical rows are fixed between a vertical row cover plate and the function plate, and the vertical row cover plate, the function plate and the splicing modules are combined to form an isolation body for isolating the periphery of each vertical row. At least two groups of isolators which are vertically arranged are fixed on the vertical row, the length of the isolator group is matched with the length of the vertical row, a bottom sealing plate is arranged on the bottom surface of the isolator at the bottom of the vertical row, and the bottom sealing plate is fixedly connected with a bottom support between side plates of the vertical row; and the vertical row side plate is provided with a reinforcing support for limiting the displacement of the vertical row cover plate. According to the invention, complete isolation between phases of the vertical copper bars is realized through a specific structural form, and a heat dissipation channel is reserved, so that the temperature rise of the vertical copper bars is controlled within an allowable range, thereby improving the reliability and safety of the use of the drawer cabinet.

The utility model relates to the technical field of valves, and provides a three-way ball valve which comprises a valve body, and a horizontal channel and a vertical channel which communicate with each other are formed in the valve body; the ball core is rotatably positioned at the joint of the horizontal channel and the vertical channel and is provided with an L-shaped channel communicated with the horizontal channel and the vertical channel; a rotatable inner pipe assembly is arranged in the valve body; the rotatable inner pipe assembly comprises an inner pipe arranged in the horizontal channel in a radial clearance fit mode; the sealing structure is arranged in a gap between the fluid inlet end of the valve body and the inner pipe; the rotating operation structure is used for rotating the inner pipe relative to the valve body; the limiting structure is used for limiting displacement of the inner pipe in the axial direction of the horizontal channel. According to the three-way ball valve, sediments can be reduced by rotating the inner pipe, maintenance is facilitated by combining the detachable design, and the technical problems that a traditional three-way ball valve is serious in sediment accumulation and difficult to clean are effectively solved.

The invention provides an EDA automatic wiring method and system, and relates to the technical field of electronic automation, and the method comprises the steps: S1, dividing the horizontal channel of each level, and storing the availability of the horizontal channel of each level through a bitmap; s2, on the basis of the bitmaps of the multi-level horizontal channels, longitudinal coordinates penetrating through the multi-level horizontal sections are determined through bit operation; s3, longitudinal coordinates of the two ends of the vertical section are determined in combination with the longitudinal coordinates of the connecting port of the vertical section and the longitudinal coordinates of the horizontal section; s4, storing the vertical sections into different queues according to the directions of the ports connected with the vertical sections and the longitudinal coordinates of the ports, and distributing vertical channels for the vertical sections according to a preset sequence; s5, according to the number of the vertical channels and the left-right distance between the adjacent level instances, the distance between the vertical channels and the transverse coordinates of the vertical sections are determined; and S6, connecting the turning point of the vertical section with the to-be-connected port, and drawing a horizontal section connected with the port. According to the invention, the time complexity can be optimized to guarantee the real-time performance.

Portable sheet stacker storage system configured to receive and store flat sheets, and process. The system includes a base including four corners. At least two corners each is including a corner post extending vertically upwardly from the base. Each corner post is including a vertical channel configured to receive and locate a corner of a flat sheet in the vertical channel. At least one pin down bar is located along a side of the base connected thereto and extending vertically upward and between two of the corner posts. The pin down bar is removably rotatably connectable to the base via a rod slot and rotatable relative to the rod slot while seated in the rod slot. An angle nut is joined with the pin down bar and selectively adjustable relative to the pin down bar. The angle nut is configured to secure in place the flat sheet relative.

The application discloses a kind of unmanned aerial vehicle guidance methods, device, equipment and medium based on recursive sliding mode, it is related to unmanned aerial vehicle flight control technical field, including: the guidance channel of unmanned aerial vehicle is decomposed into horizontal channel and vertical channel;Target recursive sliding surface is respectively constructed in horizontal channel and vertical channel, and equivalent control item is constructed according to target recursive sliding surface, and switch compensation item of sliding mode controller is generated according to external disturbance;In vertical channel, the gravity compensation item of unmanned aerial vehicle is determined, and the angle of descent bias control amount is calculated according to the angle of descent constraint of unmanned aerial vehicle;Equivalent control item, switch compensation item, gravity compensation item and angle of descent bias control amount are superposed to obtain target guidance instruction, and target guidance instruction is used to guide unmanned aerial vehicle.By generating switch compensation item according to external disturbance, dynamic robust suppression to target maneuver and environmental disturbance is realized, and the precision of unmanned aerial vehicle guidance is improved.

The utility model relates to a four-layer egg pigeon cage which comprises a pigeon cage frame, the pigeon cage frame is provided with four layers, each layer is provided with a plurality of pigeon cage grooves, pigeon cages are arranged in the pigeon cage grooves, pigeon cage doors are arranged on the pigeon cages, inclined baffles are arranged in the pigeon cages, and pigeon nests are arranged at the bottoms of the baffles. Conveying devices are arranged at the bottom of the first layer and the bottom of the third layer of the pigeon cage frame; a transverse conveying device is arranged at the tail end of the conveying device arranged at the bottom of the first layer, a vertical channel is arranged at the tail end of the conveying device arranged at the bottom of the third layer in a connected mode, and an outlet of the vertical channel is formed above the transverse conveying device. The pigeon cage has the beneficial effects that through the arrangement of the pigeon cage frame, more pigeons can be accommodated in a limited space; the inclined baffles can reduce the influence of pigeon droppings in the upper layer pigeon cage on the lower layer environment, and the conveying devices are arranged every two layers, so that the breeding cost can be effectively reduced.

This application provides a three-dimensional NAND-type oxide ferroelectric memory, its fabrication method, and its operation method. The three-dimensional NAND-type oxide ferroelectric memory includes: a substrate layer; a word line layer disposed on the substrate layer; a stacked layer disposed on the word line layer, including multiple isolation layers and multiple gate electrode layers, with the isolation layers and gate electrode layers alternately disposed; multiple vertical channel structures, each vertical channel structure penetrating the stacked layer; and a bit line layer disposed above the vertical channel structures. The inner walls of the vertical channel structures are sequentially provided with a ferroelectric dielectric layer, an oxide semiconductor layer, and a filling layer. The thickness of the ferroelectric dielectric layer is 3-7 nm, and the thickness of the oxide semiconductor layer is 0.5-5 nm. The ferroelectric dielectric layer and the oxide semiconductor layer are in direct contact, forming a metal-ferroelectric-semiconductor structure without an interface layer. The device of this application has excellent performance characteristics such as ultra-low operating voltage, high durability, ultra-fast write speed, and multi-level storage.

The invention provides a sorting and purifying method for down feathers, which comprises the following steps of: suspending and dispersing pretreated down feathers in a vertical channel by using horizontal laminar flow, synchronously detecting the form, color and chemical composition multi-dimensional characteristics of the down feathers falling down through machine vision and near infrared spectrum, and identifying the types of the down feathers in real time according to a preset model. An airflow nozzle array composed of piezoelectric ceramic high-speed valves is controlled, precise pulse airflow is emitted to blow non-target down feather away from a main track, and after branch collection, system parameters are fed back and adjusted through online purity detection. Multi-dimensional perception and fixed-point airflow removal are fused, the problems that traditional winnowing precision is low, the labor efficiency is poor, and internal quality cannot be identified through single photoelectric sorting are solved, and high-purity, high-efficiency and low-damage intelligent sorting of down feather is achieved.

The invention relates to the technical field of rectifying towers, and discloses an efficient energy-saving rectifying tower which comprises a tower body, tower plate assemblies are arranged in the tower body, the tower plate assemblies are fixed to the inner wall of the tower body in a left-right staggered mode in the vertical direction, and each tower plate assembly comprises a plate body, an overflow weir, a downcomer and a liquid receiving tank. A plurality of vertical channels which are uniformly distributed are formed in the surface of the plate body, a transverse mass transfer layer is fixedly connected to the lower part of the plate body through a flow guide heat transfer assembly, and a guide plate is fixedly connected to the lower part of the plate body; the liquid leakage problem is converted into a secondary mass transfer and temperature regulation mode, the liquid leakage direction and the gas flow direction are switched into a vertical state again, the transverse mass transfer efficiency is improved, gas rises, efficient fast-passing gas flow large-stroke temperature regulation and composite-stroke slow-passing temperature rise are achieved, and it is ensured that after gas in all areas is adjusted according to the position, the temperature of the gas flow is adjusted. The temperature error entering the liquid level layer on the top surface of the plate body is small; and the plate body surface liquid mass transfer requirement is met.

A three-dimensional flash memory includes a substrate, a stack structure, a stop layer, two slit trenches, a plurality of vertical channel structures, and a plurality of slit openings. The stack structure is disposed on the substrate. The stack structure includes a plurality of dielectric layers and a plurality of conductor layers alternately stacked. The stop layer is disposed between the substrate and the stack structure. The two slit trenches penetrate the stack structure to expose the stop layer. The plurality of vertical channel structures are disposed between the two slit trenches and penetrate the stack structure and the stop layer. The plurality of slit openings are discretely disposed between the plurality of vertical channel structures and penetrate the stack structure to expose the stop layer. A method of forming a three-dimensional NAND flash memory is also provided.

A vertical duct is to be provided for the circulation of air through rooms on the upper and lower floors of a building. This duct is capable of keeping the air clean while maintaining an appropriate temperature and humidity throughout the building. A photocatalyst 102, 105 is sprayed onto an inner wall surface of a vertical duct 44, 47, and baffle plates 202 are arranged at regular intervals along the length of a long shaft 201 of the same. Each baffle plate 202 is circular in shape, and an LED light 101, 104 is provided on the inner wall surface of the vertical duct 44, 47 to emit light towards the photocatalyst 102, 105. An axial fan 51, 55 can be a vertical duct fan 51' with a HEPA filter 51c and a sirocco fan 51d.