Semiconductor memory device
a memory device and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problem of higher leakage curren
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[0043]FIG. 1 is a sectional view of one embodiment of a DRAM device. In this embodiment, the DRAM device includes a logic region 20 and memory cell region 10 which are carried by a semiconductor substrate 100. Specifically, a memory cell region 10 is carried by the logic region20. The logic region 20 on the semiconductor substrate 100 includes logic devices. The memory cell region 10 is spaced apart from the semiconductor substrate 100, and includes switching devices and storage devices. In other embodiments, the logic region can be positioned on the memory cell region 10.
[0044]The semiconductor substrate 100 can include bulk silicon, bulk silicon-germanium, or semiconductor substrate with silicon or silicon-germanium epitaxial layer formed on the substrate. Also, the semiconductor substrate 100 can include silicon-on-sapphire(SOS), silicon-on-insulator(SOI), thin film transistor(TFT), dope or undoped semiconductors, silicon epitaxial layer formed on base semiconductor substrate.
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