359 results about "Plate electrode" patented technology

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The invention discloses an electricity testing measuring device for power equipment. The invention relates to the field of space electric field measurement, and solves the problems of unsafety and low anti-interference capability of an existing electricity testing scheme. The electric field sensor collects the electric field intensity in a non-contact manner, and the distance sensor synchronously collects the detection distance, so that a conventional contact type electroscope does not need to contact equipment through a telescopic insulating rod. The signal processing circuit preprocesses electric field intensity information and distance information respectively to obtain effective analog signals representing the electric field to be measured, and the defect that a traditional non-contact plate electrode sensor induces stray electric fields indifferentially is overcome. Besides, the judgment control circuit judges the electrification state according to the preset electric field threshold value corresponding to the current distance analog signal instead of a single fixed threshold value of a traditional device instead of adopting a fixed threshold value, the electric field distribution characteristics of equipment with different voltage grades are adapted, manual intervention is not needed, and personal safety is guaranteed. And the occurrence rate of production accidents caused by abnormal electrification of equipment is reduced.

The invention relates to the field of three-dimensional packaging, and discloses a printing glass adapter plate RDL and metalized TGV integrated manufacturing method, which adopts a single-plate electrode electric field to drive a multi-nozzle spray deposition micro-nano 3D printing technology, and performs 3D printing according to optimized printing process parameters and a set printing path. And carrying out high-efficiency defect-free metallization on the high-aspect-ratio glass through hole and printing a conductive mask pattern on the metal layer on the surface of the glass adapter plate. The seed layer which is rapidly formed and precisely electroplated through etching is adopted, and efficient and low-cost batch manufacturing of the glass adapter plate RDL is achieved.

The invention relates to a test device and method for detecting the permeability of a polar plate, and the device comprises a mold which is used for bearing and sealing a sample and is provided with an air inlet and an air outlet; the gas supply source is communicated with the gas inlet of the mold through a gas inlet pipeline and is used for providing gas for testing for the mold; the pressure regulating filter is arranged on the gas inlet pipeline and is used for regulating the gas pressure of the gas supply source and filtering the gas; the differential pressure gauge is used for detecting upper and lower end pressure difference of the sample; and the gas flow meter is arranged on a gas outlet pipeline communicated with the gas outlet and is used for detecting the flow of gas penetrating through the sample. The device quantitatively detects the permeability of the lead-acid storage battery pole plate based on the gas pressure difference, can also be used for detecting the permeability of other porous materials, and is wide in application range.

A filter device includes a laminate body, plate electrodes, resonators, and shield conductors. The plate electrodes are provided in the laminate body and are spaced apart from each other in a lamination direction. The resonators are between the plate electrodes and extend in a first direction. The shield conductors are on respective side surfaces of the laminate body, and connected to the plate electrodes. The resonators are within the laminate body and aligned in a second direction. The resonators each include a first end connected to the shield conductor and a second end spaced apart from the shield conductor. The resonator includes conductors laminated in the lamination direction. When the resonator is viewed in plan from the first direction, the conductors each include a first region including an end portion of the conductor and having a thickness greater than other portions of the conductor.

The invention provides a double-sided patterning method for a hemispherical resonance plate electrode and a plate electrode, and the method comprises the steps: clamping the side surface of an electrode body by adopting an annular clamp with grids, placing the electrode body in a film plating machine, and plating metal films on the front and back surfaces of the electrode body, meanwhile, the side face of the electrode body is plated with a grid metal strip film by adjusting the magnetron sputtering angle and the grid-shaped clamp; the metal films on the front and back surfaces of the electrode body are communicated through the grid metal strip films on the side surfaces; spraying glue on the surface of the coated electrode; the electrode is placed on a suction cup of a photoetching machine, the T-shaped mark on the suction cup is aligned with the grid metal strip on the side face of the electrode, and first alignment is completed; pushing the suction cup into the photoetching machine, and aligning the T-shaped mark on the mask with the T-shaped mark on the suction cup to complete secondary alignment; and developing and corroding to finish the double-sided patterning for the hemispherical resonance plate electrode. According to the technical scheme, an original porous electrode scheme needing a pin cap lead can be simplified.

The invention relates to an electrolytic copper foil anode plate electrode and a preparation process thereof, and belongs to the technical field of electrolytic copper foil production. The electrolytic copper foil anode plate electrode sequentially comprises a titanium substrate, an Ir-Ta oxide transition layer and an IrO2-RuO2-SnO2 oxide composite coating from inside to outside. The preparation process comprises the following steps: firstly, forming a micron-sized rough surface by utilizing acetone and ethanol ultrasonic cleaning and oxalic acid etching; the transition layer is subjected to sol dispersion and sintering treatment through polyethylene glycol, so that the balance of low porosity and high bonding strength is realized; the composite coating adopts an acetylacetone-ethylene glycol monomethyl ether solvent system, and a nanocrystalline structure is formed through step-by-step sintering; and an Ir-rich passivation layer is generated through electrochemical activation, and the finally obtained anode plate electrode has more excellent electrochemical activity and longer service life.

The invention belongs to the technical field of memristors, and particularly relates to a preparation method of a high-stability heterojunction material memristor, and the method comprises the following steps: S1, making a sample, and employing a conductive material as a substrate and a bottom electrode; s2, preparing a Cs3Bi2Br9 solution, and preparing the Cs3Bi2Br9 solution by mixing CsBr powder, BiBr3 powder, DMSO (Dimethylsulfoxide) and DMF (Dimethyl Formamide); s3, mixing and stirring the Cs3Bi2Br9 solution in the S2, adding HBr after 1 hour, and then continuously stirring and mixing; s4, performing plasma treatment on the sample in the S1, and spin-coating the sample with a Cs3Bi2Br9 solution; s5, sputtering a ZnO thin film on the sample subjected to spin coating in the step S4 for end sealing; s6, plating a top electrode on the sample subjected to ZnO film end sealing; by using the ZnO thin film to seal the end, the challenge brought by the traditional solution method for constructing the active layer of the perovskite memristor at present can be overcome, the preparation repetition rate of the memristor is effectively improved, the stability of the perovskite and the reliability of the device are effectively improved, and the problem that the stability of the existing preparation method of the perovskite thin film memristor is relatively poor is solved.

The invention discloses a processing method of a surface crystal wafer, and relates to the field of surface crystal wafer production. The whole surface crystal wafer is cut from the front side and the back side of the wafer by using a sand blasting and ultrasonic cutting method, and the cut section is arc-shaped based on the sand blasting and ultrasonic cutting method, so that the area of a plated electrode is increased, and the quality of a surface crystal oscillator is improved. The electrode plating operation is carried out based on the whole plate surface crystal wafer, and the essential wet etching step in the traditional processing technology is omitted in the scheme. The invention further discloses a processing method of the surface crystal oscillator based on the whole-board surface crystal wafers, after the whole-board surface crystal wafers are subjected to quality inspection and the positions of defective products are marked, information is uploaded to the server, the whole surface crystal wafers are integrally positioned on the tool, and then the whole-board surface crystal oscillator is processed on the basis of the accurate position of each surface crystal wafer on the whole-board surface crystal wafers recorded by the server and the positions of the defective products. According to the method, the surface crystal wafers are taken one by one by the mechanical arm and fed to the whole plate base, coordinate switching from a regular matrix to a matrix is achieved, the calculation process is simple and accurate, and the step of repositioning in the machining process of the single surface crystal wafer is omitted.

The invention relates to the technical field of plate electrodes, in particular to a plate electrode based on a polymer and a conductive micro-nano material and a preparation method of the plate electrode, the plate electrode comprises the polymer and the conductive micro-nano material, the polymer is one or two of a polymer plate and a polymer emulsion, and the particle size of the conductive micro-nano material is one or more of 40 nm to 10 [mu] m. According to the plate electrode based on the polymer and the conductive micro-nano material and the preparation method of the plate electrode, the plate electrode prepared from the conductive micro-nano materials with different particle sizes has relatively low surface resistivity and relatively high oxygen evolution potential, and can meet application requirements of specific places such as water treatment, electrochemical preparation of graphene and the like.

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The invention belongs to the technical field of electrical experiments, and particularly relates to an insulating material charge accumulation and flashover device and method under different tangent and normal electric fields, an insulating sample wafer of the device is arranged on a surface flashover assembly, and the surface flashover assembly is provided with an electrode assembly with an adjustable inclination angle; a lower plate electrode is arranged in the middle of an insulating support, a supporting rod assembly vertically penetrates through a middle through hole of the lower plate electrode to make contact with a polytetrafluoroethylene insulating plate, an insulating sample piece is arranged above the polytetrafluoroethylene insulating plate, the polytetrafluoroethylene insulating plate is hinged to the lower plate electrode, and the lower end of the supporting rod assembly is connected with a rotary driving mechanism. The rotary driving mechanism drives the supporting rod assembly to move to incline the insulating sample, and the lifting driving mechanism drives the supporting rod assembly to vertically move to enable the insulating sample to be in contact with the electrode assembly; the device has the capabilities of charge injection and charge measurement of the insulation sample wafer and measurement of flashover voltage and initial voltage along the surface of the insulation material under different tangential and normal electric fields.

According to the preparation method of the vacuum device, the vacuum device and the electronic equipment provided by the invention, the carrier plate groove is formed in the outer side of the bonding groove, and the carrier plate electrode is arranged outside the cavity structure, so that the influence of the carrier plate electrode on the vacuum effect of the cavity structure is avoided, and the vacuum effect of the cavity structure is improved. Moreover, the arrangement of the bonding groove not only can avoid the influence on the vacuum effect of the cavity structure due to the overflow of the solder bump to the periphery during the subsequent substrate bonding, but also can avoid the influence on the bonding effect of the substrate due to the projection of the solder bump, thereby further improving the vacuum effect of the cavity structure, and improving the bonding effect of the substrate. Besides, a carrier exposed groove is formed in the second substrate in advance, and a vacuum device formed after bonding can be directly ground to expose a carrier electrode and an alignment mark, so that the possibility of damage to the cavity structure is avoided, and the vacuum effect of the cavity structure is further improved.

The invention discloses a molten salt dielectric heat conduction chemical preparation method of a flat wood carbon electrode substrate material, a wood carbon electrode precursor is covered with molten salt, the molten salt dielectric heat conduction chemical synthesis is carried out according to the heating-heat preservation-cooling process, and the molten salt is a mixture formed by mixing inert molten salt and active molten salt; and removing condensed fused salt on the surface of the synthetic product, polishing the surface, and drying to obtain the wood carbon electrode substrate material. According to the preparation method, the problems of high cost, high energy consumption, narrow application range and the like in preparation of a high-performance plate electrode substrate carbon material aiming at integral wood with a specific size are solved, and the self-supporting electrode material substrate which is low in cost, has a hierarchical pore structure and has comprehensive performance is obtained. The obtained wood carbon electrode substrate material can be used as a plate electrode substrate carbon material; alternatively, a high surface capacitance plate electrode is directly used for capacitive deionization or supercapacitors.

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The invention belongs to the technical field of mass spectrum ionization sources, provides an online detection mass spectrum ionization source for gas components at an outlet of a combustion chamber of an aero-engine, and solves the problem that an existing ionization source is difficult to be applied to a field test for measuring the concentration of components at the outlet of a combustion chamber of a real aero-engine. According to the technical scheme, the device comprises an ionization source cavity and a radio frequency windowless discharge lamp, a plate electrode, a taper hole electrode, a lamp holder electrode, a direct current transmission electrode, a radio frequency transmission electrode and a differential electrode are sequentially arranged in the ionization source cavity in the axis direction, and a discharge gas inlet is formed in the ionization source cavity. One end of the radio frequency windowless discharge lamp is connected to the discharge gas inlet, and the other end of the radio frequency windowless discharge lamp extends into the lamp holder electrode; the taper hole electrode enables fuel gas to be fed in a molecular beam mode, efficient transmission of stable components and active components in the fuel gas is guaranteed, efficient transmission of ions is achieved in the mode that the direct-current transmission electrode and the radio-frequency transmission electrode are combined, and full-spectrum online analysis of the components of the fuel gas at the outlet of a combustion chamber of an aero-engine can be achieved.

An LC filter includes a multilayer body, plate electrodes, capacitor electrodes, and inductor vias. The capacitor electrodes each define a capacitor between the plate electrode and a corresponding one of the capacitor electrodes. A first inductor via is connected between a first capacitor electrode and a first plate electrode. A second inductor via is connected between a second capacitor electrode and the first plate electrode. A third inductor via is connected between a third capacitor electrode and the first plate electrode. A fourth capacitor electrode faces the first and second capacitor electrodes. A fifth capacitor electrode faces the second and third capacitor electrodes. A sixth capacitor electrode faces the first and third capacitor electrodes.

The invention provides an electrode device, and relates to the field of vacuum imaging, and the electrode device comprises two supporting assemblies which are oppositely arranged in a first direction, and each supporting assembly is provided with a first installation groove and a second installation groove which are arranged at an interval in a second direction orthogonal to the first direction; two ends of one plate electrode are respectively inserted into the two first mounting grooves, and two ends of the other plate electrode are respectively inserted into the two second mounting grooves; wherein the parallelism of the first mounting groove and the second mounting groove is configured to be lt; the flatness of the inner walls, opposite to each other in the second direction, of the first mounting groove and / or the second mounting groove is configured to be lt; the thickness of the two plate electrodes is 0.005 mm, so that a uniform electric field can be generated between the two plate electrodes after the two plate electrodes are electrified, and the uniform electric field is used for regulating and controlling the quantum state of quantum bits between the two plate electrodes.

The utility model discloses an electrode plate, an electrolytic bath, an electrolytic hydrogen production system and a hydrogen production station, and belongs to the technical field of water electrolysis hydrogen production. The electrode plate of the electrolytic cell comprises an electrode plate, an electrode frame and at least one separator. The pole frame surrounds the outer ring of the pole plate, and defines an electrolysis area with the pole plate; the two ends of the separator are connected with the electrode frame, so that the electrolysis area is divided into at least two electrolysis sub-areas; wherein the electrode frame is provided with a plurality of groups of liquid inlet and outlet channels, and each electrolytic sub-region is communicated with the corresponding liquid inlet and outlet channel. Through the combination of the polar plates, the polar frames, the separators and the multiple groups of liquid inlet and outlet channels, the electrode plates can be divided into at least two areas, so that the circulating flow of electrolyte is realized, the uniform distribution of the electrolyte in the electrolysis process is ensured, the overtemperature problem of the electrolytic bath is improved, the retention time of bubbles in the electrolytic bath is shortened, the bubbles can be timely eliminated, and the service life of the electrolytic bath is prolonged. And the electrolytic reaction solution resistance caused by bubbles is reduced to the maximum extent, so that the electrolytic efficiency is improved.

The invention discloses a hydrogen fuel stack structure, which comprises a plurality of fuel cell monomers arranged in a laminated manner, each fuel cell monomer comprises a polar plate, the front surface of each polar plate is provided with an air flow channel groove, the back surface of each polar plate is provided with a hydrogen flow channel groove, and each polar plate is provided with a plurality of cooling holes. The cooling holes penetrate through the front surface and the back surface of the polar plate, and the plurality of cooling holes are distributed in the peripheral sides of the hydrogen flow channel groove and the air flow channel groove. The hydrogen flow channel grooves and the air flow channel grooves are formed in the front faces and the back faces of the polar plates, the polar plates are directly provided with the cooling holes for cooling, the single-plate three-channel structural design is achieved, the overall structure is simple, the weight of the hydrogen fuel stack structure can be obviously reduced, and the lightweight development of the battery is facilitated.

The present application relates to the field of semiconductor equipment technology, and provides an insulating coating defect detection method and detection system, the method comprising: contacting the conductive surface of the substrate to be detected that is opposite to the coating surface with the lower electrode to form a flat electrode; arranging the coating surface of the substrate to be detected relative to the upper electrode according to a preset spacing; applying a preset voltage to the upper electrode so that the upper electrode can form a tip discharge; starting a motion control module, clamping the upper electrode to move according to a preset detection path, and being able to cover the coating surface of the substrate to be detected, wherein the detection path is generated according to the shape of the substrate to be detected and the characteristics of the coating surface; checking whether there is a position on the coating surface where a tip discharge is generated, and the position where a tip discharge is generated indicates that the porosity of this position exceeds the set standard, and the position where a tip discharge is not generated indicates that the porosity of this position meets the set standard. The present application performs defect detection through tip discharge without damaging the coating, thereby improving the defect detection efficiency.

The invention discloses an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and a preparation method thereof. The LDMOS device comprises a semiconductor layer; the body region and the drift region are located in the semiconductor layer; a source region in the body region; the first isolation structure and the drain region are located in the drift region, the drain region and the source region are arranged in the target direction, and the first isolation structure is located on the side, close to the source region, of the drain region; the gate structure is located between the source region and the drain region on the surface of the semiconductor layer; the field plate structure is located on the surface of the first isolation structure and comprises a field plate dielectric layer covering the surface of the first isolation structure and a field plate electrode layer located on the surface of the field plate dielectric layer, and the field plate electrode layer is connected with the gate structure; wherein the field plate electrode layer is arranged at the central position of the surface of the first isolation structure along the target direction, and the length of the field plate electrode layer in the target direction is 1 / 2-3 / 4 of the length of the surface of the first isolation structure. According to the invention, high voltage resistance of the device can be realized under the condition that the on resistance and the process cost of the device are not obviously improved.

The utility model provides an alkaline etching solution electrolysis cathode plate. The alkaline etching liquid electrolysis cathode plate comprises a cathode plate body and a cathode plate electrode, the cathode plate body and the cathode plate electrode are connected and fixed through a dismounting mechanism, a first jack is formed in the cathode plate body, a second jack is formed in the cathode plate electrode, and the first jack is communicated with the second jack; the disassembling and assembling mechanism comprises a hollow inserting cylinder, a fixing ring, a plurality of limiting stopping blocks and an elastic column, the hollow inserting cylinder penetrates through the second inserting hole and extends into the first inserting hole, and the hollow inserting cylinder is matched with the second inserting hole and the first inserting hole. According to the alkaline etching solution electrolysis cathode plate provided by the utility model, the structure is simple by arranging the dismounting mechanism, and the cathode plate body and the cathode plate electrode can be dismounted and fixed without a tool, so that the dismounting difficulty can be reduced.

The invention relates to a device which is formed by organically combining numerous devices capable of implementing same or different operations on charges, and periodically charges and discharges staggered variable plate capacitors by utilizing direct-current electric energy. The plate electrode is periodically driven to move in parallel by the electric field gravitation which is formed by the periodically stored electric energy and is parallel to the plate electrode, so that the electric energy is periodically, efficiently and cheaply converted into kinetic energy to be continuously output, or a variable plate capacitor device is periodically charged; and the periodically stored electric energy interacts with power formed by kinetic energy converted from wind energy, water energy, potential energy, chemical energy, nuclear energy and the like due to electric field gravitation parallel to a plate electrode formed by dislocation of the plate electrode, so that the kinetic energy is periodically, efficiently and cheaply converted into the electric energy to be continuously output.

1. The name of the design product: hemispherical resonator gyro flat plate electrode. 2. The use of the design product: inertial measurement. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The invention relates to a method and a system for testing explosion characteristics of metal dust in an SF6 gas environment. The system comprises the following steps: acquiring a metal dust sample with preset mass; plate electrodes are arranged at the top and the bottom in a gas insulation test cavity respectively, and the metal dust sample is flatly laid on the plate electrode at the bottom of the gas insulation test cavity; the gas insulation test cavity is vacuumized and then filled with SF6 insulation gas; voltage is applied to the plate electrode in a preset mode, so that a controllable electric field is formed in a dust space concentration area, and a physical signal representing discharge is synchronously monitored; and iterating the process by increasing the mass of the metal dust sample until a physical signal indicating explosion or breakdown is monitored, stopping iteration, and recording the current voltage value and the corresponding concentration of the metal dust sample to obtain the explosion triggering critical condition of the metal dust in the insulating gas environment.

To provide a chip resistor having lower electric resistance and more stable quality.SOLUTION: The chip resistor 1 includes a metallic resistor 10, a first plated electrode 21, and a second plated electrode 22. The metal resistor 10 includes a first bottom plate portion 11, a second bottom plate portion 12, a top plate portion 13, a first inclined leg portion 14, and a second inclined leg portion 15. The first plating electrode 21 is disposed on the bottom surface of the first bottom plate portion 11, the bottom surface of the first inclined leg portion 14, and the bottom surface of the top plate portion 13. The second plating electrode 22 is disposed on the bottom surface of the second bottom plate portion 12, the bottom surface of the second inclined leg portion 15, and the bottom surface of the top plate portion 13.SELECTED DRAWING: Figure 3

To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.

The present disclosure discloses a galvanometer unit, a preparation method thereof, a scanning mirror and a radar system. The galvanometer unit comprises a first substrate and a second substrate which are bonded, the second substrate comprises a galvanometer structure accommodated in a cavity structure, the galvanometer structure has a rotation axis, the first substrate comprises an electrostatic driving structure and a flat plate electrode which is arranged to face the second substrate and is insulated from the electrostatic driving structure, the electrostatic driving structure drives the flat plate electrode to reciprocate in a first direction, the flat plate electrode comprises a first main electrode and a second main electrode which are located on different sides of the rotation axis, and during the reciprocation of the flat plate electrode driven by the electrostatic driving structure, the overlapping area of the first main electrode and the second main electrode with the galvanometer structure changes, so that the electrostatic attraction force acting on the galvanometer structure changes, and the galvanometer structure is driven to rotate along the rotation axis.

The embodiment of the invention provides an electrowetting display device. The electrowetting display device comprises an upper cover plate, a lower cover plate and a fluid chamber arranged between the upper cover plate and the lower cover plate. A first space is defined in the fluid cavity through a plurality of pixel walls, the pixel walls are arranged on the side face, close to the lower cover plate, of the fluid cavity, the space, except for the first space, in the fluid cavity is a second space, oily fluid is contained in the first space, and water-based fluid is contained in the second space; the upper cover plate comprises an upper cover plate electrode and a fluorine-containing upper hydrophobic dielectric layer which are sequentially arranged from top to bottom; the lower cover plate comprises a fluorine-containing lower hydrophobic dielectric layer and a lower cover plate electrode which are sequentially arranged from top to bottom; and an alternating current driving power supply is connected between the upper cover plate electrode and the lower cover plate electrode. According to the embodiment of the invention, the condition that the polarity of the aperture ratio of the electrowetting display device is asymmetric during alternating current driving can be improved, and the problem of flicker caused by the asymmetric phenomenon is solved.