189 results about "Plate electrode" patented technology

The invention discloses an electricity testing measuring device for power equipment. The invention relates to the field of space electric field measurement, and solves the problems of unsafety and low anti-interference capability of an existing electricity testing scheme. The electric field sensor collects the electric field intensity in a non-contact manner, and the distance sensor synchronously collects the detection distance, so that a conventional contact type electroscope does not need to contact equipment through a telescopic insulating rod. The signal processing circuit preprocesses electric field intensity information and distance information respectively to obtain effective analog signals representing the electric field to be measured, and the defect that a traditional non-contact plate electrode sensor induces stray electric fields indifferentially is overcome. Besides, the judgment control circuit judges the electrification state according to the preset electric field threshold value corresponding to the current distance analog signal instead of a single fixed threshold value of a traditional device instead of adopting a fixed threshold value, the electric field distribution characteristics of equipment with different voltage grades are adapted, manual intervention is not needed, and personal safety is guaranteed. And the occurrence rate of production accidents caused by abnormal electrification of equipment is reduced.

The invention relates to an electrolytic copper foil anode plate electrode and a preparation process thereof, and belongs to the technical field of electrolytic copper foil production. The electrolytic copper foil anode plate electrode sequentially comprises a titanium substrate, an Ir-Ta oxide transition layer and an IrO2-RuO2-SnO2 oxide composite coating from inside to outside. The preparation process comprises the following steps: firstly, forming a micron-sized rough surface by utilizing acetone and ethanol ultrasonic cleaning and oxalic acid etching; the transition layer is subjected to sol dispersion and sintering treatment through polyethylene glycol, so that the balance of low porosity and high bonding strength is realized; the composite coating adopts an acetylacetone-ethylene glycol monomethyl ether solvent system, and a nanocrystalline structure is formed through step-by-step sintering; and an Ir-rich passivation layer is generated through electrochemical activation, and the finally obtained anode plate electrode has more excellent electrochemical activity and longer service life.

The invention belongs to the technical field of electrical experiments, and particularly relates to an insulating material charge accumulation and flashover device and method under different tangent and normal electric fields, an insulating sample wafer of the device is arranged on a surface flashover assembly, and the surface flashover assembly is provided with an electrode assembly with an adjustable inclination angle; a lower plate electrode is arranged in the middle of an insulating support, a supporting rod assembly vertically penetrates through a middle through hole of the lower plate electrode to make contact with a polytetrafluoroethylene insulating plate, an insulating sample piece is arranged above the polytetrafluoroethylene insulating plate, the polytetrafluoroethylene insulating plate is hinged to the lower plate electrode, and the lower end of the supporting rod assembly is connected with a rotary driving mechanism. The rotary driving mechanism drives the supporting rod assembly to move to incline the insulating sample, and the lifting driving mechanism drives the supporting rod assembly to vertically move to enable the insulating sample to be in contact with the electrode assembly; the device has the capabilities of charge injection and charge measurement of the insulation sample wafer and measurement of flashover voltage and initial voltage along the surface of the insulation material under different tangential and normal electric fields.

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The invention provides an electrode device, and relates to the field of vacuum imaging, and the electrode device comprises two supporting assemblies which are oppositely arranged in a first direction, and each supporting assembly is provided with a first installation groove and a second installation groove which are arranged at an interval in a second direction orthogonal to the first direction; two ends of one plate electrode are respectively inserted into the two first mounting grooves, and two ends of the other plate electrode are respectively inserted into the two second mounting grooves; wherein the parallelism of the first mounting groove and the second mounting groove is configured to be lt; the flatness of the inner walls, opposite to each other in the second direction, of the first mounting groove and / or the second mounting groove is configured to be lt; the thickness of the two plate electrodes is 0.005 mm, so that a uniform electric field can be generated between the two plate electrodes after the two plate electrodes are electrified, and the uniform electric field is used for regulating and controlling the quantum state of quantum bits between the two plate electrodes.

1. The name of the design product: hemispherical resonator gyro flat plate electrode. 2. The use of the design product: inertial measurement. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The invention relates to a method and a system for testing explosion characteristics of metal dust in an SF6 gas environment. The system comprises the following steps: acquiring a metal dust sample with preset mass; plate electrodes are arranged at the top and the bottom in a gas insulation test cavity respectively, and the metal dust sample is flatly laid on the plate electrode at the bottom of the gas insulation test cavity; the gas insulation test cavity is vacuumized and then filled with SF6 insulation gas; voltage is applied to the plate electrode in a preset mode, so that a controllable electric field is formed in a dust space concentration area, and a physical signal representing discharge is synchronously monitored; and iterating the process by increasing the mass of the metal dust sample until a physical signal indicating explosion or breakdown is monitored, stopping iteration, and recording the current voltage value and the corresponding concentration of the metal dust sample to obtain the explosion triggering critical condition of the metal dust in the insulating gas environment.

To provide a chip resistor having lower electric resistance and more stable quality.SOLUTION: The chip resistor 1 includes a metallic resistor 10, a first plated electrode 21, and a second plated electrode 22. The metal resistor 10 includes a first bottom plate portion 11, a second bottom plate portion 12, a top plate portion 13, a first inclined leg portion 14, and a second inclined leg portion 15. The first plating electrode 21 is disposed on the bottom surface of the first bottom plate portion 11, the bottom surface of the first inclined leg portion 14, and the bottom surface of the top plate portion 13. The second plating electrode 22 is disposed on the bottom surface of the second bottom plate portion 12, the bottom surface of the second inclined leg portion 15, and the bottom surface of the top plate portion 13.SELECTED DRAWING: Figure 3

To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.

The present disclosure discloses a galvanometer unit, a preparation method thereof, a scanning mirror and a radar system. The galvanometer unit comprises a first substrate and a second substrate which are bonded, the second substrate comprises a galvanometer structure accommodated in a cavity structure, the galvanometer structure has a rotation axis, the first substrate comprises an electrostatic driving structure and a flat plate electrode which is arranged to face the second substrate and is insulated from the electrostatic driving structure, the electrostatic driving structure drives the flat plate electrode to reciprocate in a first direction, the flat plate electrode comprises a first main electrode and a second main electrode which are located on different sides of the rotation axis, and during the reciprocation of the flat plate electrode driven by the electrostatic driving structure, the overlapping area of the first main electrode and the second main electrode with the galvanometer structure changes, so that the electrostatic attraction force acting on the galvanometer structure changes, and the galvanometer structure is driven to rotate along the rotation axis.

The application discloses a kind of pipe plate structure aerosol electric charging device, including variable diameter metal pipe, insulating box, variable diameter pipe, variable diameter metal pipe is the variable diameter structure of thick lower thin, the outer wall of thin end of variable diameter metal pipe is equipped with the insulating object of cylindrical shape, and the opening of lower end of variable diameter metal pipe is provided with pipe discharge electrode. Insulating box is cylindrical, including upper insulating plate, insulating ring, lower insulating plate, the top surface of insulating ring is connected with the bottom surface of upper insulating plate, and the bottom surface of insulating ring is connected with the top surface of lower insulating plate. The center of upper insulating plate is provided with inlet, and the lower end of variable diameter metal pipe is located in the inner cavity of insulating box by penetrating inlet, and variable diameter metal pipe is coaxially installed with upper insulating plate by insulating object. The top surface of lower insulating plate is provided with flat plate electrode at the center, and a plurality of round hole outlets are evenly provided along the circumferential direction of flat plate electrode. Variable diameter pipe is circumferentially connected with the bottom edge of lower insulating plate. The device uses pipe plate structure, utilizes the edge of pipe and negative plate to generate gas discharge, and improves the charging efficiency.

The utility model discloses a projection welding device for a nut plate and a plate electrode, which belongs to the technical field of projection welding electrodes, and comprises a nut electrode holder and a nut electrode cover, and a conical compression spring and a KCF positioning pin are arranged in the nut electrode holder and the nut electrode cover. According to the utility model, through differentiated electrode structure design, one side of a thinner welding workpiece is contacted by a smaller electrode, and one side of a thicker welding workpiece is contacted by a larger electrode, so that current can be concentrated on the thin plate side as required, accurate deviation of nuggets is realized, the welding precision is improved, and the production efficiency is improved. Meanwhile, the depth of fusion and nugget at the projection welding spot of the workpiece are obviously increased due to the increase of the current density and the concentration of heat, and the welding strength and reliability are enhanced; the electrode material is changed on the basis of changing the electrode structure, and the beryllium copper electrode with larger resistance is adopted on one side of the thin plate, so that the welding heat on the side of the thin plate is increased.

The utility model discloses a kind of hemispherical resonator gyroscopes and flat plate electrodes, flat plate electrode includes quartz sheet, its upper surface is equipped with by the frame pattern with set line width is separated GND film layer and multiple electrode film layers, multiple electrode film layers are arranged in circumferential interval, GND film layer is extended from quartz upper surface edge to surround multiple electrode film layers by inside;Multiple grooves are equipped on the lateral wall surface of quartz sheet, groove extends to the lower surface of quartz sheet and is penetrated, groove includes a ground groove and multiple electrode grooves, multiple electrode grooves and multiple electrode film layers one-to-one correspondence, each electrode film layer extends to the groove wall of corresponding electrode groove by inside, ground groove is located between two adjacent electrode grooves, the region corresponding to GND film layer and ground groove extends to the groove wall layer covering ground groove by inside.The utility model can solve the problem that hemispherical resonator gyroscope assembly reverse welding is difficult, vibration is easy to fall off.

The utility model discloses a ceramic substrate damage detection device, which relates to the technical field of damage detection, and comprises a shell, an internal frame is arranged in the shell, a pin electrode is arranged on the internal frame, a camera module is arranged on one side of the internal frame, a limiting carrier plate is slidably mounted at the front end of the shell, and the limiting carrier plate is connected with the pin electrode. A limiting support plate is arranged in the shell, a plate electrode is fixedly installed on the limiting support plate, an adjustable light window is formed in one side of the shell, a power interface is formed in the other side of the shell, the camera module comprises a camera body and a sliding support, the camera body is movably installed on the sliding support, and the inner frame comprises an exoskeleton frame. According to the ceramic substrate damage detection device, weak light spots on the surface of the ceramic substrate can be detected to judge whether the substrate is damaged or not, and the illumination intensity of the internal test environment can be finely controlled through the adjustable light window to determine the optimal imaging condition, so that the weak light spots on the surface of the ceramic substrate can be clearly presented.

The application provides a high-Q value MEMS ring gyroscope structure with external electrodes, which comprises a ring, a mass block arranged outside the ring and connected through a circumferential decoupling beam, a comb electrode arranged inside the mass block and a flat plate electrode arranged inside the ring. The MEMS gyroscope is connected through a radial connecting beam and an anchor point at the outermost side, the main working mode is a displacement amplification mode in which the inner multi-ring and the outer mass move in phase, the degeneration of the working mode and the detection mode can be realized, and the principle of the Coriolis effect is met. In addition, the external electrode of the application is an innovative stiffness-mass decoupling design, which optimizes the mode distribution of the ring gyroscope and improves the driving / detection capacitance of the gyroscope, so that the gyroscope has good dynamic characteristics and higher mechanical-electrical interface sensitivity.

The spark plug electrode comprises a grounding electrode, a central electrode and a plurality of precious metal plate electrodes are arranged at the central position of the grounding electrode, the precious metal plate electrodes are arranged on the periphery of the central electrode in the circumferential direction, and gaps between the precious metal plate electrodes and the central electrode are communicated with each other. The distances between the precious metal plate electrodes and the central electrode are the same, the grounding electrode is provided with a plurality of round holes, and the spark plug electrode is long in service life and easy to manufacture.

This invention relates to the field of semiconductor device technology and discloses an aluminum-based copper-plated electrode for integrated circuits and its preparation method. The electrode includes an aluminum substrate. A first copper plating layer and a first aluminum plating layer are disposed on the surface of the aluminum substrate, forming a first composite coating layer. The first copper plating layer and the first aluminum plating layer are separated. A second copper plating layer and a second aluminum plating layer are disposed on the upper surface of the first copper plating layer and the first aluminum plating layer, forming a second composite coating layer. The first copper plating layer and the second copper plating layer correspond to each other, and the first aluminum plating layer and the second aluminum plating layer correspond to each other. This aluminum-based copper-plated electrode for integrated circuits and its preparation method, through the oblique corrugated structure design of the aluminum substrate surface and the design of the blocky composite coating layers arranged perpendicularly to each other of the same material, disperse and release the interlayer shear stress caused by the thermal expansion difference between aluminum and copper, thus solving the problem of coating delamination and peeling.

The present application relates to the technical field of photoelectric functional crystal materials, in particular to a preparation method of tetragonal transparent potassium tantalum niobate crystal, comprising the following steps: (1) plating electrodes on the surface of the crystal; (2) controlling the temperature of the potassium tantalum niobate crystal with plated electrodes to be within the range of 2-6 ℃ below the Curie point and keeping it constant all the time; (3) polarizing the crystal by applying an alternating electric field under ultraviolet laser irradiation to obtain the tetragonal transparent potassium tantalum niobate crystal. The potassium tantalum niobate crystal prepared by the method can maintain a transparent state for a long time without a large thermal shock, solving the problem that the tetragonal potassium tantalum niobate crystal cannot be applied in the field of electro-optical modulation due to low light transmittance, and also solving the problem of light scattering caused by micro-domain walls of the cubic potassium tantalum niobate crystal near the Curie point.

To provide a particle classification device and a particle classification method.SOLUTION: A particle classification device comprises: a supply chamber 51 which supplies a suspension solution 11 in which particles are dispersed; a filtration chamber 52 which allows fine particle components in the solution to pass therethrough by an electric-field filtration action and retains a concentrated liquid of coarse particle components; and a filtrate chamber 53 which discharges, to the outside, a filtrate including the fine particle components that have passed through. The filtration chamber 52 includes: a plate-shaped anode electrode 14 disposed on a supply chamber side and having through holes; and a cathode filter plate electrode 14 disposed on a filtrate chamber 53 side, including a diaphragm 13 having pores that block negatively-charged coarse particle components and having pores.SELECTED DRAWING: Figure 1

The application discloses a processing technology of a tuning fork crystal, which comprises glass beads, tuning fork pieces arranged on the glass beads, shells arranged on the tuning fork pieces and lead wires arranged at the bottom of the glass beads, the tuning fork pieces are ST cut type, silver-plated electrodes are arranged on the tuning fork pieces, and the silver-plated electrodes are designed in a rotary mode. The unique ST cut type is adopted instead of the traditional DT cut type, so that a higher frequency range can be obtained. Since the vibration mode of the ST cut type is a torsional vibration mode, the electrodes are designed in a rotary mode, so as to conform to the oscillation mode of the ST cut type, thereby ensuring that the crystal piece can work stably after starting to vibrate. By adopting the unique ST cut type, the traditional tuning fork structure is retained, the rotary electrodes are utilized to promote the crystal piece to start to vibrate smoothly, and the torsional vibration mode maximally realizes the frequency which cannot be reached by the conventional tuning fork crystal.

A semiconductor device includes a bit line structures on a substrate, extending in a first direction, and being spaced apart from each other in a second direction; channels contacting upper surfaces of the bit line structures and being spaced apart from each other in the first and second directions; upper gate structures extending in the second direction and surrounding the channels disposed in the second direction, the upper gate structures being spaced apart in the first direction; and a capacitor structure including first capacitor electrodes respectively on the channels; a dielectric layer on the first capacitor electrodes, the dielectric layer including a ferroelectric material or an anti-ferroelectric material; a second capacitor electrode layer on the dielectric layer; and capacitor plate electrodes on the second capacitor electrode layer, the capacitor plate electrodes each extending in the second direction and being spaced apart from each other in the first direction.

The utility model provides a kind of electrochemical reduction circulating water hardness treatment equipment, it is related to processing equipment technical field, including processing jar, the inner wall of processing jar is fixedly installed with round leakage plate, the top of round leakage plate is equipped with electrochemical component, and the electrochemical component includes honeycomb metal plate, and the top of honeycomb metal plate is fixedly installed with conical expansion port.The utility model, by setting electrochemical component, the honeycomb metal plate design of equipment, cooperate the thread groove of inner wall, make water flow form rotating vortex, increase more than 30% contact area of flat plate electrode, substantially improve the electrolytic conversion efficiency of calcium, magnesium ion.Simultaneously, the local low pressure area formed by venturi effect of conical structure accelerates precipitated particle to separate from electrode surface, avoids electrode incrustation, guarantees electrochemical reaction to continue efficiently, can quickly reduce circulating water hardness, effectively solve the scale formation problem, improve the operation efficiency of circulating water system.

This application provides a lightning transient electric field observation device, relating to the field of meteorological observation. The device comprises a hemispherical induction electrode and a grounding reference plate, which are spaced apart and insulated from each other by a mounting column. Compared to a flat electrode with an equal projected area, the electric field concentration effect of the convex surface of the hemispherical conductor generates a higher equivalent charge collection efficiency. The signal preprocessing module is located on the mounting column near the hemispherical induction electrode and is directly electrically connected to it, structurally minimizing the signal path and avoiding excessive parasitic capacitance. Thus, without increasing the physical size, it improves the response capability to weak electric field changes and enhances the high-frequency response effect.

An antenna module (100) is provided with a dielectric substrate (130), a flat plate-shaped radiating element (121), a ground electrode (GND) facing a main surface of the radiating element (121), and a flat plate electrode (151). The flat plate electrode (151) is electrically connected to the ground electrode (GND). The radiating element (121) includes a rectangular body portion (1211), and a protruding portion (1212) in a first direction from a side along a second direction of the body portion (1211). A high-frequency signal is supplied to a power supply point (SP1) offset in the first direction from the center of the radiating element (121). An end portion of the radiating element (121) in the first direction has a region (RG1) having the protruding portion (1212) and a region (RG2) not having the protruding portion (1212). When viewed in a plan view from a normal direction of the dielectric substrate (130), the flat plate electrode (151) is disposed at a position in the first direction from the region (RG2) and in the second direction from the protruding portion (1212).

The application discloses a motor anti-corona material corona resistance performance test device, system and method, relates to the high-voltage motor insulation technical field, and the test device comprises a plate electrode assembly and a blade electrode, the plate electrode assembly is used for bearing a sample to be tested, and a grounding electrode is fixed to the lower surface of the plate electrode assembly; the bottom of the blade electrode has a straight line blade with a length of 50 mm+ / -0.1 mm, the main body curvature radius of the blade cross-section profile is 0.22 mm+ / -0.008 mm, the straight line blade is formed by the intersection of two inclined sides, the blade included angle is 53.14 DEG, and the corner at the length direction end has a roundness with a diameter of 3 mm+ / -0.2 mm; during the test, a uniform and spacing-adjustable discharge gap is formed between the surface of the straight line blade and the surface of the sample to be tested on the upper surface of the plate electrode assembly. The application solves the problems that the existing test device cannot simulate a real non-uniform electric field and is difficult to produce standardized corona erosion, and realizes efficient and repeatable quantitative evaluation of the corona resistance performance of the anti-corona material.

The invention belongs to the technical field of electrochemistry, and discloses a distributor structure for a flat plate type electrode, which comprises a base as a support base of an electrolytic bath; the plate electrode is arranged at the top of the base; the distribution net is arranged at the top of the plate electrode, and a capillary distribution channel is arranged in the distribution net; the cover plate is arranged at the top of the distribution net; the base is internally provided with a solution distribution assembly, the solution distribution assembly comprises a cathode chamber, a liquid inlet pipe and a branch pipe which are communicated with the cathode chamber, and a liquid collecting tank and a flow direction changing structure which are arranged in the cathode chamber, and an inlet / outlet liquid collecting tank and a capillary distribution channel are arranged in the base, so that uniform distribution of a solution on the surface of an electrode is ensured; in addition, through structural optimization, the purposes of greatly shortening the cell spacing, ensuring the maximum flow rate and reducing the cell voltage are achieved, and therefore the purposes that the solution is evenly distributed on the surface of the electrode plate and flows through the electrode plate rapidly are achieved.

A semiconductor device includes a peripheral circuit pattern on a substrate including first and second regions, a bit line structure on the peripheral circuit pattern electrically connected to the peripheral circuit pattern on the first region of the substrate, a channel on and electrically connected to the bit line structure, a word line at a side of the channel, a capacitor on and electrically connected to the channel, a plate electrode on an upper surface and a sidewall of the capacitor, an etch stop pattern on the second region of the substrate, and a first through via on and electrically connected to the peripheral circuit pattern on the second region of the substrate. A lower surface of the etch stop pattern is coplanar with a lower surface of the channel, and the first through via extends through the etch stop pattern in a vertical direction, and contacts the plate electrode.

A method of fabricating a device includes forming a multi-layer stack comprising a plurality of electrode layers and a first dielectric layer comprising a non-linear polar material. The method further comprises forming a second dielectric layer on the multi-layer stack, annealing the multi-layer stack, and forming a transistor above a second substrate. A third dielectric layer is formed above the transistor. The second dielectric layer can be bonded with the third dielectric layer and the multi-layer stack can be etched to form a capacitor and a plate electrode connected with the capacitor. An electrode structure can be formed, where at least a portion of the electrode structure extends through the plate electrode and couples with a terminal of the transistor.

To facilitate connection between a gate electrode of a charge transfer section and wiring. The semiconductor apparatus includes a connection region, a photoelectric conversion section, a charge holding section, and a charge transfer section. The connection region is on the surface of the semiconductor substrate and to which wiring is connected. The photoelectric conversion section and the charge holding section are in the semiconductor substrate. The charge transfer section includes a MOS transistor including a gate electrode including a vertical electrode section disposed in the semiconductor substrate and a flat plate electrode section embedded in a surface of the semiconductor substrate and having a size in a plane direction of the semiconductor substrate different from that of the vertical electrode section and having wiring connected to an upper surface, and transfers a charge of the photoelectric conversion section to the charge holding section.