112 results about "Plate electrode" patented technology

The invention belongs to the technical field of electrical experiments, and particularly relates to an insulating material charge accumulation and flashover device and method under different tangent and normal electric fields, an insulating sample wafer of the device is arranged on a surface flashover assembly, and the surface flashover assembly is provided with an electrode assembly with an adjustable inclination angle; a lower plate electrode is arranged in the middle of an insulating support, a supporting rod assembly vertically penetrates through a middle through hole of the lower plate electrode to make contact with a polytetrafluoroethylene insulating plate, an insulating sample piece is arranged above the polytetrafluoroethylene insulating plate, the polytetrafluoroethylene insulating plate is hinged to the lower plate electrode, and the lower end of the supporting rod assembly is connected with a rotary driving mechanism. The rotary driving mechanism drives the supporting rod assembly to move to incline the insulating sample, and the lifting driving mechanism drives the supporting rod assembly to vertically move to enable the insulating sample to be in contact with the electrode assembly; the device has the capabilities of charge injection and charge measurement of the insulation sample wafer and measurement of flashover voltage and initial voltage along the surface of the insulation material under different tangential and normal electric fields.

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The invention provides an electrode device, and relates to the field of vacuum imaging, and the electrode device comprises two supporting assemblies which are oppositely arranged in a first direction, and each supporting assembly is provided with a first installation groove and a second installation groove which are arranged at an interval in a second direction orthogonal to the first direction; two ends of one plate electrode are respectively inserted into the two first mounting grooves, and two ends of the other plate electrode are respectively inserted into the two second mounting grooves; wherein the parallelism of the first mounting groove and the second mounting groove is configured to be lt; the flatness of the inner walls, opposite to each other in the second direction, of the first mounting groove and / or the second mounting groove is configured to be lt; the thickness of the two plate electrodes is 0.005 mm, so that a uniform electric field can be generated between the two plate electrodes after the two plate electrodes are electrified, and the uniform electric field is used for regulating and controlling the quantum state of quantum bits between the two plate electrodes.

The invention relates to a method and a system for testing explosion characteristics of metal dust in an SF6 gas environment. The system comprises the following steps: acquiring a metal dust sample with preset mass; plate electrodes are arranged at the top and the bottom in a gas insulation test cavity respectively, and the metal dust sample is flatly laid on the plate electrode at the bottom of the gas insulation test cavity; the gas insulation test cavity is vacuumized and then filled with SF6 insulation gas; voltage is applied to the plate electrode in a preset mode, so that a controllable electric field is formed in a dust space concentration area, and a physical signal representing discharge is synchronously monitored; and iterating the process by increasing the mass of the metal dust sample until a physical signal indicating explosion or breakdown is monitored, stopping iteration, and recording the current voltage value and the corresponding concentration of the metal dust sample to obtain the explosion triggering critical condition of the metal dust in the insulating gas environment.

To provide a chip resistor having lower electric resistance and more stable quality.SOLUTION: The chip resistor 1 includes a metallic resistor 10, a first plated electrode 21, and a second plated electrode 22. The metal resistor 10 includes a first bottom plate portion 11, a second bottom plate portion 12, a top plate portion 13, a first inclined leg portion 14, and a second inclined leg portion 15. The first plating electrode 21 is disposed on the bottom surface of the first bottom plate portion 11, the bottom surface of the first inclined leg portion 14, and the bottom surface of the top plate portion 13. The second plating electrode 22 is disposed on the bottom surface of the second bottom plate portion 12, the bottom surface of the second inclined leg portion 15, and the bottom surface of the top plate portion 13.SELECTED DRAWING: Figure 3

To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.

The present disclosure discloses a galvanometer unit, a preparation method thereof, a scanning mirror and a radar system. The galvanometer unit comprises a first substrate and a second substrate which are bonded, the second substrate comprises a galvanometer structure accommodated in a cavity structure, the galvanometer structure has a rotation axis, the first substrate comprises an electrostatic driving structure and a flat plate electrode which is arranged to face the second substrate and is insulated from the electrostatic driving structure, the electrostatic driving structure drives the flat plate electrode to reciprocate in a first direction, the flat plate electrode comprises a first main electrode and a second main electrode which are located on different sides of the rotation axis, and during the reciprocation of the flat plate electrode driven by the electrostatic driving structure, the overlapping area of the first main electrode and the second main electrode with the galvanometer structure changes, so that the electrostatic attraction force acting on the galvanometer structure changes, and the galvanometer structure is driven to rotate along the rotation axis.

The utility model discloses a projection welding device for a nut plate and a plate electrode, which belongs to the technical field of projection welding electrodes, and comprises a nut electrode holder and a nut electrode cover, and a conical compression spring and a KCF positioning pin are arranged in the nut electrode holder and the nut electrode cover. According to the utility model, through differentiated electrode structure design, one side of a thinner welding workpiece is contacted by a smaller electrode, and one side of a thicker welding workpiece is contacted by a larger electrode, so that current can be concentrated on the thin plate side as required, accurate deviation of nuggets is realized, the welding precision is improved, and the production efficiency is improved. Meanwhile, the depth of fusion and nugget at the projection welding spot of the workpiece are obviously increased due to the increase of the current density and the concentration of heat, and the welding strength and reliability are enhanced; the electrode material is changed on the basis of changing the electrode structure, and the beryllium copper electrode with larger resistance is adopted on one side of the thin plate, so that the welding heat on the side of the thin plate is increased.

The utility model discloses a kind of hemispherical resonator gyroscopes and flat plate electrodes, flat plate electrode includes quartz sheet, its upper surface is equipped with by the frame pattern with set line width is separated GND film layer and multiple electrode film layers, multiple electrode film layers are arranged in circumferential interval, GND film layer is extended from quartz upper surface edge to surround multiple electrode film layers by inside;Multiple grooves are equipped on the lateral wall surface of quartz sheet, groove extends to the lower surface of quartz sheet and is penetrated, groove includes a ground groove and multiple electrode grooves, multiple electrode grooves and multiple electrode film layers one-to-one correspondence, each electrode film layer extends to the groove wall of corresponding electrode groove by inside, ground groove is located between two adjacent electrode grooves, the region corresponding to GND film layer and ground groove extends to the groove wall layer covering ground groove by inside.The utility model can solve the problem that hemispherical resonator gyroscope assembly reverse welding is difficult, vibration is easy to fall off.

The application provides a high-Q value MEMS ring gyroscope structure with external electrodes, which comprises a ring, a mass block arranged outside the ring and connected through a circumferential decoupling beam, a comb electrode arranged inside the mass block and a flat plate electrode arranged inside the ring. The MEMS gyroscope is connected through a radial connecting beam and an anchor point at the outermost side, the main working mode is a displacement amplification mode in which the inner multi-ring and the outer mass move in phase, the degeneration of the working mode and the detection mode can be realized, and the principle of the Coriolis effect is met. In addition, the external electrode of the application is an innovative stiffness-mass decoupling design, which optimizes the mode distribution of the ring gyroscope and improves the driving / detection capacitance of the gyroscope, so that the gyroscope has good dynamic characteristics and higher mechanical-electrical interface sensitivity.

The spark plug electrode comprises a grounding electrode, a central electrode and a plurality of precious metal plate electrodes are arranged at the central position of the grounding electrode, the precious metal plate electrodes are arranged on the periphery of the central electrode in the circumferential direction, and gaps between the precious metal plate electrodes and the central electrode are communicated with each other. The distances between the precious metal plate electrodes and the central electrode are the same, the grounding electrode is provided with a plurality of round holes, and the spark plug electrode is long in service life and easy to manufacture.

This invention relates to the field of semiconductor device technology and discloses an aluminum-based copper-plated electrode for integrated circuits and its preparation method. The electrode includes an aluminum substrate. A first copper plating layer and a first aluminum plating layer are disposed on the surface of the aluminum substrate, forming a first composite coating layer. The first copper plating layer and the first aluminum plating layer are separated. A second copper plating layer and a second aluminum plating layer are disposed on the upper surface of the first copper plating layer and the first aluminum plating layer, forming a second composite coating layer. The first copper plating layer and the second copper plating layer correspond to each other, and the first aluminum plating layer and the second aluminum plating layer correspond to each other. This aluminum-based copper-plated electrode for integrated circuits and its preparation method, through the oblique corrugated structure design of the aluminum substrate surface and the design of the blocky composite coating layers arranged perpendicularly to each other of the same material, disperse and release the interlayer shear stress caused by the thermal expansion difference between aluminum and copper, thus solving the problem of coating delamination and peeling.

The application discloses a processing technology of a tuning fork crystal, which comprises glass beads, tuning fork pieces arranged on the glass beads, shells arranged on the tuning fork pieces and lead wires arranged at the bottom of the glass beads, the tuning fork pieces are ST cut type, silver-plated electrodes are arranged on the tuning fork pieces, and the silver-plated electrodes are designed in a rotary mode. The unique ST cut type is adopted instead of the traditional DT cut type, so that a higher frequency range can be obtained. Since the vibration mode of the ST cut type is a torsional vibration mode, the electrodes are designed in a rotary mode, so as to conform to the oscillation mode of the ST cut type, thereby ensuring that the crystal piece can work stably after starting to vibrate. By adopting the unique ST cut type, the traditional tuning fork structure is retained, the rotary electrodes are utilized to promote the crystal piece to start to vibrate smoothly, and the torsional vibration mode maximally realizes the frequency which cannot be reached by the conventional tuning fork crystal.

A semiconductor device includes a bit line structures on a substrate, extending in a first direction, and being spaced apart from each other in a second direction; channels contacting upper surfaces of the bit line structures and being spaced apart from each other in the first and second directions; upper gate structures extending in the second direction and surrounding the channels disposed in the second direction, the upper gate structures being spaced apart in the first direction; and a capacitor structure including first capacitor electrodes respectively on the channels; a dielectric layer on the first capacitor electrodes, the dielectric layer including a ferroelectric material or an anti-ferroelectric material; a second capacitor electrode layer on the dielectric layer; and capacitor plate electrodes on the second capacitor electrode layer, the capacitor plate electrodes each extending in the second direction and being spaced apart from each other in the first direction.

The utility model provides a kind of electrochemical reduction circulating water hardness treatment equipment, it is related to processing equipment technical field, including processing jar, the inner wall of processing jar is fixedly installed with round leakage plate, the top of round leakage plate is equipped with electrochemical component, and the electrochemical component includes honeycomb metal plate, and the top of honeycomb metal plate is fixedly installed with conical expansion port.The utility model, by setting electrochemical component, the honeycomb metal plate design of equipment, cooperate the thread groove of inner wall, make water flow form rotating vortex, increase more than 30% contact area of flat plate electrode, substantially improve the electrolytic conversion efficiency of calcium, magnesium ion.Simultaneously, the local low pressure area formed by venturi effect of conical structure accelerates precipitated particle to separate from electrode surface, avoids electrode incrustation, guarantees electrochemical reaction to continue efficiently, can quickly reduce circulating water hardness, effectively solve the scale formation problem, improve the operation efficiency of circulating water system.

This application provides a lightning transient electric field observation device, relating to the field of meteorological observation. The device comprises a hemispherical induction electrode and a grounding reference plate, which are spaced apart and insulated from each other by a mounting column. Compared to a flat electrode with an equal projected area, the electric field concentration effect of the convex surface of the hemispherical conductor generates a higher equivalent charge collection efficiency. The signal preprocessing module is located on the mounting column near the hemispherical induction electrode and is directly electrically connected to it, structurally minimizing the signal path and avoiding excessive parasitic capacitance. Thus, without increasing the physical size, it improves the response capability to weak electric field changes and enhances the high-frequency response effect.

An antenna module (100) is provided with a dielectric substrate (130), a flat plate-shaped radiating element (121), a ground electrode (GND) facing a main surface of the radiating element (121), and a flat plate electrode (151). The flat plate electrode (151) is electrically connected to the ground electrode (GND). The radiating element (121) includes a rectangular body portion (1211), and a protruding portion (1212) in a first direction from a side along a second direction of the body portion (1211). A high-frequency signal is supplied to a power supply point (SP1) offset in the first direction from the center of the radiating element (121). An end portion of the radiating element (121) in the first direction has a region (RG1) having the protruding portion (1212) and a region (RG2) not having the protruding portion (1212). When viewed in a plan view from a normal direction of the dielectric substrate (130), the flat plate electrode (151) is disposed at a position in the first direction from the region (RG2) and in the second direction from the protruding portion (1212).

The application discloses a motor anti-corona material corona resistance performance test device, system and method, relates to the high-voltage motor insulation technical field, and the test device comprises a plate electrode assembly and a blade electrode, the plate electrode assembly is used for bearing a sample to be tested, and a grounding electrode is fixed to the lower surface of the plate electrode assembly; the bottom of the blade electrode has a straight line blade with a length of 50 mm+ / -0.1 mm, the main body curvature radius of the blade cross-section profile is 0.22 mm+ / -0.008 mm, the straight line blade is formed by the intersection of two inclined sides, the blade included angle is 53.14 DEG, and the corner at the length direction end has a roundness with a diameter of 3 mm+ / -0.2 mm; during the test, a uniform and spacing-adjustable discharge gap is formed between the surface of the straight line blade and the surface of the sample to be tested on the upper surface of the plate electrode assembly. The application solves the problems that the existing test device cannot simulate a real non-uniform electric field and is difficult to produce standardized corona erosion, and realizes efficient and repeatable quantitative evaluation of the corona resistance performance of the anti-corona material.

To facilitate connection between a gate electrode of a charge transfer section and wiring. The semiconductor apparatus includes a connection region, a photoelectric conversion section, a charge holding section, and a charge transfer section. The connection region is on the surface of the semiconductor substrate and to which wiring is connected. The photoelectric conversion section and the charge holding section are in the semiconductor substrate. The charge transfer section includes a MOS transistor including a gate electrode including a vertical electrode section disposed in the semiconductor substrate and a flat plate electrode section embedded in a surface of the semiconductor substrate and having a size in a plane direction of the semiconductor substrate different from that of the vertical electrode section and having wiring connected to an upper surface, and transfers a charge of the photoelectric conversion section to the charge holding section.

A semiconductor device having excellent reliability is provided, and includes, from the bottom, a first nitride semiconductor layer, a second nitride semiconductor layer having a larger band gap than the first nitride semiconductor layer, a first electrode electrically connected to the first nitride semiconductor layer, a second electrode above the first nitride semiconductor layer and electrically connected thereto, a gate electrode between the first electrode and the second electrode, a gate field plate electrode above the gate electrode and electrically connected thereto, a first field plate electrode between the gate field plate electrode and the second electrode, electrically connected to the first electrode, and a second field plate electrode between the first field plate electrode and the gate field plate electrode, electrically connected to the first electrode. A bottom surface of the second field plate electrode is closer to the first nitride semiconductor layer than a bottom surface of a portion of the gate field plate electrode that protrudes most toward the second electrode, and is closer to the first nitride semiconductor layer than a bottom of an end surface of the first field plate electrode on the first electrode side.

The present disclosure discloses a vertical stack-type memory device may including a word line extending in a horizontal direction and having a vertical through-hole region, a vertical bit line arranged vertically to pass through the through-hole region, a channel layer pattern arranged to surround the vertical bit line inside the through-hole region, a body insulating layer disposed between the vertical bit line and a remaining portion except for the one end of the channel layer pattern, an electrode member arranged to surround an outer peripheral surface of the channel layer pattern at a height higher than the word line, a dielectric layer pattern disposed between the word line and the channel layer pattern and having a structure surrounding the electrode member, and a plate electrode in contact with the dielectric layer pattern above the word line.

A semiconductor device is disclosed. The semiconductor device includes a ground pad on a substrate, a lower electrode on the ground pad, the lower electrode electrically connected to the ground pad, a dielectric layer on the lower electrode, the dielectric layer extending along a contour of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including a first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.

A semiconductor device includes a first structure including a substrate, and a second structure overlapping the first structure and including a peripheral circuit. The first structure includes a device isolation structure in the substrate, channel structures spaced apart from each other, an insulating pattern between the channel structures, bitlines extending in a vertical direction and contacting the channel structures, a gate electrode surrounding the channel structures, data storage structures contacting the channel structures, and a plate electrode connected to the data storage structures. The device isolation structure includes a first device isolation pattern overlapping the bitlines in the vertical direction, a second device isolation pattern overlapping the plate electrode in the vertical direction, and third device isolation patterns overlapping the insulating pattern in the vertical direction, and at least one of the first, second, and third device isolation patterns penetrates the substrate.

The application discloses an array substrate and a display panel. The array substrate comprises a substrate, a plurality of back plate electrodes located on a first surface side of the substrate, and a protective layer located on the first surface side and covering the back plate electrodes. The thermal conductivity of the protective layer is greater than or equal to 400 W / (m*k). The protective layer is provided with an opening corresponding to the position of each back plate electrode. The area of the back plate electrode exposed from the opening is used for bonding connection with a light-emitting chip. In this way, the heat dissipation path of the light-emitting chip is prolonged, and the heat dissipation performance of the light-emitting chip is effectively improved.

The invention relates to an electric-wet combined aging simulation system and an aging simulation method of oiled paper. The system comprises a sealed cavity, an electrode module and a humidity control module, wherein the electrode module and the humidity control module are mounted in the sealed cavity; wherein the electrode module comprises a rod electrode fixed at the top of the sealed cavity and a plate electrode fixed at the bottom of the sealed cavity; the plate electrode is used for placing an oiled paper sample; the electrode module is used for performing halo discharge on the oiled paper sample so as to simulate the electrical aging process of the oiled paper sample; and the humidity control module is used for adjusting the relative humidity in the sealed cavity in the process of simulating the electrical aging of the oiled paper sample so as to simulate the electrical aging process of the oiled paper sample in a damp state. By adopting the method, electric field stress and humidity effects are considered simultaneously.

To provide a semiconductor device capable of suppressing ringing.SOLUTION: The semiconductor device includes a semiconductor layer having a first plane and a second plane and including a first trench provided on a side of the first plane, a first field plate electrode in the first trench, a gate electrode in a gate trench, a first electrode provided on a side of the first plane with respect to the semiconductor layer and electrically connected to the first field plate electrode, a second electrode provided on a side of the second plane with respect to the semiconductor layer, and a connection portion provided between the first electrode and the first field plate electrode, electrically connected to the first electrode and the first field plate electrode, and having an electric resistance higher than an electric resistance of the first field plate electrode.SELECTED DRAWING: Figure 1

The invention provides a hemispherical resonator gyroscope base high-uniformity welding device and method.The device comprises a vacuum cavity, welding flux, an upper layer heating device, a lower layer heating device, an annular heating device, a first thermocouple, a second thermocouple and a control unit, the upper layer heating device is arranged at the top in the vacuum cavity, and the lower layer heating device is arranged at the bottom in the vacuum cavity; the lower layer heating device is arranged at the bottom in the vacuum chamber, the annular heating device is arranged on the side wall of the vacuum chamber in a surrounding mode, the base is arranged in the vacuum chamber, the welding flux is arranged between the ceramic base contact pin and the plate electrode, the first thermocouple is arranged at the top end of the ceramic base contact pin, and the second thermocouple is arranged on the bottom face of the plate electrode. By applying the technical scheme, the technical problem of low welding strength caused by non-uniform heating of the welding flux in the prior art is solved.