The invention belongs to the technical field of memristors, and particularly relates to a preparation method of a high-stability
heterojunction material
memristor, and the method comprises the following steps: S1, making a sample, and employing a conductive material as a substrate and a bottom
electrode; s2, preparing a Cs3Bi2Br9 solution, and preparing the Cs3Bi2Br9 solution by mixing CsBr
powder, BiBr3
powder, DMSO (Dimethylsulfoxide) and DMF (
Dimethyl Formamide); s3, mixing and stirring the Cs3Bi2Br9 solution in the S2, adding HBr after 1 hour, and then continuously stirring and mixing; s4, performing
plasma treatment on the sample in the S1, and spin-
coating the sample with a Cs3Bi2Br9 solution; s5,
sputtering a ZnO thin film on the sample subjected to
spin coating in the step S4 for end sealing; s6, plating a top
electrode on the sample subjected to ZnO film end sealing; by using the ZnO thin film to seal the end, the challenge brought by the traditional solution method for constructing the
active layer of the
perovskite memristor at present can be overcome, the preparation repetition rate of the
memristor is effectively improved, the stability of the
perovskite and the reliability of the device are effectively improved, and the problem that the stability of the existing preparation method of the
perovskite thin film memristor is relatively poor is solved.