1161results about "Active medium material" patented technology

A passive mode-locked polarized laser including an oscillator, the oscillator including: a cavity; a pump source coupled to the cavity; an optical output coupler, and an optical output isolator. Also, a method for generating polarized pulsed light having a wavelength of about 2 μm using the passive mode-locked polarized laser.

A flight path clearing system comprising a laser beam system in an aircraft and a controller. The controller is configured to select a number of characteristics for a laser beam based on an object type. The controller is configured to control the laser beam system to emit the laser beam with the number of characteristics in a direction relative to a flight path of the aircraft. The controller is configured to control the laser beam system to move the laser beam with the number of characteristics selected for the object type to scan an area using a pattern that is based on a sequence of locations in the pattern being nearest to a center of the area, wherein a number of objects of the object type hit by the laser beam is cleared from the flight path.

A bismuth-doped (BI) fiber (BIDF) and a bismuth-doped fiber amplifier (BIDFA) are shown and described. The BiDF includes a gain band and an auxiliary band. The gain band has a first center wavelength (λ1) and a first six decibel (6 dB) gain bandwidth. The auxiliary band has a second center wavelength (λ2), λ2<λ1. The system also includes a signal source and a pump source optically coupled to the BiDF. The signal source provides an optical signal at λ1, and the pump source provides pump light at a pump wavelength (λ3).

The invention provides a near-infrared perovskite laser and a preparation method thereof. The near-infrared perovskite laser includes: a substrate; the perovskite gain dielectric layer is arranged on the substrate, a microcrystalline structure is formed on the perovskite gain dielectric layer, and the microcrystalline structure is a resonant cavity of the perovskite gain dielectric layer. The near-infrared perovskite laser provided by the invention can realize lasing under optical pumping at room temperature without adopting an additional resonant cavity, so that the device structure is greatly simplified, and the integration of the laser is improved; by regulating and controlling the components and the preparation process, the regulation of the lasing peak can be realized, the regulation precision is high, and the use requirements of multiple wavelengths can be met; a full-solution method can be adopted for preparation, the process is simple, and the cost is low.

A laser apparatus includes: a laser oscillator that includes a mirror and emits a laser beam; and an external resonator that includes a nonlinear optical crystal that functions as a phase conjugate mirror. The phase conjugate mirror reflects the laser beam and produces a phase conjugate wave that reaches the mirror of the laser oscillator, and the mirror of the laser oscillator and the phase conjugate mirror cause laser oscillation such that a wavelength and a phase of the laser beam oscillated by the laser oscillation are automatically fixed.

An electrodeless laser-driven light source includes a laser that generates a CW sustaining light. A pump laser generates pump light. A Q-switched laser crystal receives the pump light generated by the pump laser and generates pulsed laser light at an output in response to the generated pump light. A first optical element projects the pulsed laser light along a first axis to a breakdown region in a gas-filled bulb comprising an ionizing gas. A second optical element projects the CW sustaining light along a second axis to a CW plasma region in the gas-filled bulb comprising the ionizing gas. A detector detects plasma light generated by a CW plasma and generates a detection signal at an output. A controller generates control signals that control the pump light to the Q-switched laser crystal so as to extinguish the pulsed laser light within a time delay after the detection signal exceeds a threshold level.

The invention relates to an intermediate infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal as well as a preparation method and application thereof, and belongs to the technical field of single crystals or uniform polycrystalline materials with certain structures. The mid-infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal comprises a host crystal, active ions, de-active ions and auxiliary ions, the host crystal is a gadolinium gallium garnet crystal, the activating ion is Ho < 3 + >, the deactivating ion is Pr < 3 + >, and the auxiliary ions at least comprise Ca < 2 + >, Mg < 2 + > and Zr < 4 + >; the doping concentration of Pr < 3 + > is greater than or equal to 0.05 at%. The mid-infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal has the advantages of low laser threshold and high laser output power and efficiency.

The invention discloses a high-tolerance synchronous dual-band pulse laser, and relates to the field of lasers, and the laser comprises a first resonant cavity and a second resonant cavity; the first resonant cavity comprises a first pumping source and an optical annular cavity formed by sequentially connecting a first wavelength division multiplexer, a first thulium-doped optical fiber, a first optical coupler, a first isolator, a second wavelength division multiplexer, a high-nonlinearity saturable absorber, a third wavelength division multiplexer and a first polarization controller; the second resonant cavity comprises a second pumping source and an optical annular cavity which is formed by sequentially connecting a fifth wavelength division multiplexer, a second erbium-doped fiber, a second optical coupler, a second wavelength division multiplexer, a high-nonlinearity saturable absorber, a third wavelength division multiplexer, an electric control adjustable delay line, a fourth wavelength division multiplexer, a second polarization controller and a second isolator, and the fifth wavelength division multiplexer, the second erbium-doped fiber, the second optical coupler, the high-nonlinearity saturable absorber, the third wavelength division multiplexer, the electric control adjustable delay line, the fourth wavelength division multiplexer, the second polarization controller and the second isolator; and the first optical coupler and the second optical coupler respectively output synchronization pulses in the wave bands of 2 microns and 1.5 microns. The device is compact in structure, low in manufacturing cost, convenient to operate and capable of covering the mid-infrared band of 2 microns.

The present invention provides a laser glass with higher thermal conductivity and lower linear expansion coefficient. The laser glass, whose components are expressed in molar percentage, contains: P2O5: 50.0-59.0%; B2O3: 7.8-20.0%; Al2O3: 5.0-12.0%; Na2O: 0.5-9.0%; MgO: 0.5-6.0%; Yb2O3: 5.0-9.6%; Er2O3: 0.03-0.6%; Cr2O3: 0.04-0.5%. Through reasonable component design, the laser glass obtained by the present invention has a lower linear expansion coefficient and higher thermal conductivity, and at the same time has a longer radiation life, which is beneficial to the improvement of laser gain performance, can improve the thermal properties of laser glass, reduce or avoid damage and cracking of laser glass during operation, and optimize the equipment stability and laser quality of laser glass in high-power or continuous output scenarios.

The invention provides a holmium and ytterbium co-doped mid-infrared microsphere Raman laser and a preparation method thereof, and relates to the technical field of laser preparation, the holmium and ytterbium co-doped mid-infrared microsphere Raman laser comprises an infrared transmission optical fiber, a pump light source, holmium and ytterbium co-doped tellurate glass microspheres and passive tellurate glass microspheres, pump light emitted by the pump light source is guided to a conical region through the infrared transmission optical fiber, and the holmium and ytterbium co-doped tellurate glass microspheres and the passive tellurate glass microspheres are arranged in the conical region; sequentially carrying out optical coupling with holmium and ytterbium co-doped tellurate glass microspheres and passive tellurate glass microspheres; in the holmium and ytterbium co-doped tellurate glass microspheres, the doping amount of the holmium element is 0.3%, and the doping amount of the ytterbium element is 0.45% according to the mass percentage. Compared with the prior art, through the cascade structure of the holmium-ytterbium co-doped microspheres and the passive microspheres, three-step wavelength conversion of pump light-rare earth ion lasing-Raman frequency shift is realized in a single system for the first time, and the wavelength limitation that a traditional single microsphere depends on a rare earth ion fixed energy level is broken through.

An electrodeless laser-driven light source includes a laser source that generates a CW sustaining light and a pump laser that generates a pump. An optical beam combiner combines the CW sustaining light and the pump such that the CW sustaining light and the pump propagate co-linearly. A Q-switched laser crystal generates pulsed light in response to the pump. A gas-filled bulb is configured such that the pulsed light ignites a pulse plasma in a breakdown region of the gas bulb and the sustaining light sustains a CW plasma in a CW plasma region of the gas bulb, thereby emitting a high brightness light from the gas bulb, where the gas-filled bulb is positioned between the output of the pump laser and the pump input of the Q-switched laser crystal such that the CW plasma absorbs the pump light quenching the pulsed light generated by the Q-switched laser crystal.

The invention provides a near-infrared perovskite laser without an external cavity and a preparation method thereof. The preparation method of the near-infrared perovskite laser without the external cavity comprises the following steps: dropwise adding a perovskite precursor solution on a substrate; covering a flexible thin film on the substrate, so that the perovskite precursor solution is uniformly distributed between the substrate and the flexible thin film; after the substrate is subjected to standing treatment, the flexible thin film is removed, the perovskite gain dielectric layer is obtained, the flexible thin film is used for inducing the perovskite precursor solution to grow a microcrystalline structure in the process of forming the perovskite gain dielectric layer, and the microcrystalline structure is a resonant cavity of the perovskite gain dielectric layer. According to the preparation method provided by the invention, high-temperature treatment such as heating or thermal annealing is not needed, the preparation process is simple, the cost is low, large-area preparation of the near-infrared perovskite laser without an external resonant cavity can be realized, and adjustment of the emission peak of the laser can be realized by regulating and controlling the components of the perovskite gain material and preparation process parameters.

Photonic particles and methods of using particles in biological samples are disclosed. The particles are configured to emit laser light when stimulated by, for example, pump source energy. The particles may include: a gain medium having an inorganic material, an optical cavity having a high refractive index, and a coating having an organic material. The particles may be less than 3 microns along their longest axis. The particles may be attached to each other to form, for example, doublets and triplets. The particles may be injection locked by coupling an injection beam into the particles during pumping, so that the injection seeds are amplified to develop into laser oscillations. The microscope system may include a pump source, a beam scanner, a spectrometer having a resolution of less than 1 nanometer and an acquisition rate of greater than 1 kilohertz, and a spectrum analyzer configured to distinguish the spectral peaks output by the laser from a broadband background.

The invention relates to a microsphere laser and a preparation method thereof, the microsphere laser comprises an optical fiber, microspheres and a pump light source, the microspheres are erbium-ytterbium co-doped microspheres containing erbium ions and ytterbium ions, the number of the microspheres is two, the microspheres are respectively a first microsphere and a second microsphere, the diameter of the first microsphere is smaller than that of the second microsphere, and the pump light source is arranged between the optical fiber and the pump light source. A conical area which is gradually shrunk from the two ends to the middle is arranged at the position, close to the center, of the optical fiber, the first end of the conical area is close to the pump light source, the second end of the conical area is far away from the pump light source, and the two microspheres are located on the upper side and the lower side of the conical area of the optical fiber respectively. The first microsphere is disposed proximate a first end of the tapered region to couple with a first end of the optical fiber, and the second microsphere is disposed proximate a second end of the tapered region to couple with a second end of the optical fiber. Through the arrangement form of the two microspheres, the optical fiber and the pump light source, the threshold value is reduced.

A device for generating laser with ultra-narrow-linewidth includes an optical self-injection locking loop and an ultra-stable cavity phase-locked loop. The optical self-injection locking loop improves the quality factor of the laser resonator to narrow the linewidth. The ultra-stable cavity phase-locked loop locks the phase of the optical signal in the optical self-injection, synchronizing the laser frequency with the optical resonator. Through feedback control of the laser's driving current, it further reduces the laser's frequency noise and enhances the linewidth narrowing rate. Additionally, the ultra-stable cavity phase-locked loop provides stable control of the laser frequency, preventing mode hopping caused by laser frequency drift, thereby improving system stability. Therefore, this device can provide a stable narrow-linewidth laser source for applications in fiber optic communication, lidar, industrial device processing, and medical fields.

A grain-oriented electrical steel sheet according to an embodiment of the present disclosure includes: an electrical steel sheet substrate; and an insulating film layer that is disposed on the electrical steel sheet substrate. At least one deformation portion having a linear shape is formed on a surface of the electrical steel sheet substrate, and a natural corrosion potential value of the electrical steel sheet is -350 mV or more.

The invention discloses a dual-wavelength microsphere laser based on tri-doped rare earth ions and a preparation method thereof, the dual-wavelength microsphere laser based on tri-doped rare earth ions comprises a silica fiber, the middle part of the silica fiber is provided with a conical region; the pump light source is arranged at one end of the silica fiber; the erbium, holmium and ytterbium tri-doped tellurate glass microspheres are arranged in the conical region; pump light emitted by the pump light source is guided to the conical region through the single-mode optical fiber and is optically coupled with the erbium-holmium-ytterbium tri-doped tellurate glass microsphere; in the erbium-holmium-ytterbium triple-doped tellurate glass microspheres, infrared-transmitting tellurate glass is used as a matrix, and the doping amount of an erbium element is 0.11%, the doping amount of a holmium element is 0.22%, and the doping amount of an ytterbium element is 0.80% in percentage by mass. According to the dual-wavelength microsphere laser based on the three-doped rare earth ions, efficient and stable dual-wavelength laser output is achieved.

The invention discloses a diamond on-chip integrated laser and a preparation method thereof, and relates to the technical field of integrated optics, and the on-chip integrated laser comprises a high-power semiconductor laser, a diamond substrate and a waveguide. Wherein the same diamond substrate is divided into a laser integration area and a waveguide integration area; the high-power semiconductor laser is integrated in the laser integration area of the diamond substrate through a thin film circuit; the waveguide is integrated in the waveguide integration area and comprises a waveguide material layer, diamond films are evenly plated on the upper portion and the lower portion of the waveguide material layer and the surfaces of the two sides, in non-laser coupling with the high-power semiconductor laser, of the waveguide material layer, and the end, not plated with the diamond films, of the waveguide material layer is aligned with a light outlet of the high-power semiconductor laser. According to the invention, the luminous efficiency of the integrated optical chip is improved, the thermal crosstalk problem of the chip is solved, and the stable output of the whole laser is ensured.

Consolidated Master Oscillator Power Amplifier (MOPA) laser modules and method of fabrication thereof. A MOPA comprises a prefabricated chassis, comprising a plurality of surfaces, a master oscillator laser (MO), enduringly affixed to at least one first surface out of the plurality of surfaces, a power amplifier (PA), enduringly affixed to at least one second surface out of the plurality of surfaces, wherein a spatial relationship between the at least one first surface and the at least one second surface determines an alignment between the MO and the PA, and a beam transfer system (BTS), enduringly affixed to the prefabricated chassis, the BTS comprising a plurality of optical elements for transferring light outputted from the MO to the PA for amplification.

The utility model discloses a relaxation oscillation suppression high-power quasi-continuous thulium-doped fiber laser. The relaxation oscillation suppression high-power quasi-continuous thulium-doped fiber laser comprises a multi-wavelength hybrid pump, a wavelength division multiplexer, a first fiber bragg grating, a thulium-doped fiber, a second fiber bragg grating and a cladding stripper which are connected in sequence, the multi-wavelength hybrid pump comprises a bias pump source and a plurality of pulse pump sources; the output ends of the plurality of pulse pumping sources are connected with the input end of the wavelength division multiplexer; the bias pumping source is connected with one end of the third fiber bragg grating, the other end of the third fiber bragg grating is connected with one end of the erbium-ytterbium co-doped fiber, the other end of the erbium-ytterbium co-doped fiber is connected with one end of the fourth fiber bragg grating, and the other end of the fourth fiber bragg grating is connected with the input end of the wavelength division multiplexer. The laser provided by the utility model not only can stably suppress relaxation oscillation, but also can greatly reduce the power of the bias continuous substrate required in a light path, thereby reducing the power consumption and heat productivity of the laser, and avoiding destructive influence on a processing environment and acting substances.

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

The present invention proposes a high-power nanosecond ultraviolet laser, which relates to the technical field of solid lasers, including a first pump source, a first pump mirror, a first gain crystal, a second gain crystal, a second pump mirror and a second pump source arranged in sequence along the light-emitting direction of the first pump source; the first pump light emitted by the first pump source is transmitted to the first gain crystal, the second gain crystal and the second pump mirror in sequence through the first pump mirror, the first pump light is reflected by the second pump mirror, so that the reflected light of the second pump mirror is transmitted to the Q-switched device and the first reflector in sequence, the second pump light emitted by the second pump source is transmitted to the second gain crystal, the first gain crystal and the first pump mirror in sequence through the second pump mirror, the second pump light is reflected by the first pump mirror, so that the reflected light of the first pump mirror is reflected to the second reflector; the reflected light of the second reflector is transmitted to the triple frequency crystal, the double frequency crystal and the third reflector in sequence, so that the triple frequency crystal outputs ultraviolet laser close to the end face of the second reflector. The present invention is helpful to improve the output power of ultraviolet laser.

A method of exciting light emission includes using a single mode sapphire optical waveguide as a gain medium, and a sapphire optic including an optical gain medium, the optical gain medium including the single mode sapphire optical waveguide.

The invention discloses an unequal-arm Mach-Zehnder interferometer and micro-ring cascaded multi-channel output wavelength tunable laser. The unequal-arm Mach-Zehnder interferometer and micro-ring cascaded multi-channel output wavelength tunable laser comprises a chip; the spot size converter is arranged on the chip; the composite resonant cavity is connected with the spot size converter; the composite resonant cavity comprises a phase modulation arm connected with the spot size converter; the first unequal-arm Mach-Zehnder interferometer is connected with the phase modulation arm; a second unequal-arm Mach-Zehnder interferometer and a third unequal-arm Mach-Zehnder interferometer; and the annular resonant cavity is connected with the output end of the second unequal-arm Mach-Zehnder interferometer and the output end of the third unequal-arm Mach-Zehnder interferometer through waveguides. The invention is used for providing a laser with selectable output channel number and tunable output wavelength, the tuning range of the laser can reach 30nm, and the laser can be used for a dense wavelength division multiplexing system and can be used as a frequency modulated continuous wave laser radar light source.

Systems and methods of in situ pressure control at an anatomical environment during a procedure are disclosed. An exemplary irrigation and suction system comprises a user input configured to receive from a user a desired pressure to be applied to the anatomical environment, or a desired flow condition corresponding to the desired pressure. The system comprises a pressure sensor to sense a pressure at or near the anatomical environment, and a control module to adjust one or more of an irrigation flow rate or a suction flow rate of at least one working channel of a medical device to maintain the pressure of the anatomical environment at substantially a level of the desired pressure, or to maintain the desired flow condition in the working channel during the procedure.

The invention provides a high-power wide-spectrum long-wave infrared femtosecond laser generation method, and relates to the technical field of infrared ultrafast laser. According to the method, the 1.5 [mu] m pumping BGSe crystal is adopted, compared with a traditional 1 [mu] m pumping BGSe crystal, the heat accumulation effect is greatly reduced, and the operation stability of the system is remarkably improved in combination with a water-cooling heat dissipation device. Through crystal cutting angle optimization and phase matching design, 10-16 [mu] m wide-spectrum long-wave infrared femtosecond laser output is achieved, the power reaches 100 mW, and the application requirements in the fields of molecular spectrum recognition, environment monitoring and the like are met.

Systems and methods of in situ unclogging a working channel in a medical device during a procedure are disclosed. An exemplary unclogging system comprises a flow sensor to sense a flow rate through a working channel, and a control module to detect a channel state indicating a presence or absence of clogging based on the flow rate. In the presence of channel clogging, the control module can control one or more of an irrigation source or a suction source to provide respectively irrigation fluid or suction pressure to unclog the obstructed channel. The control module can adjust one or more of an irrigation flow rate or a suction flow rate through the working channel to maintain a desired pressure of the anatomical environment at the anatomical site, or to maintain a desired flow condition in the working channel, during the procedure.

The present invention relates to a method for preparing a composite crystal, comprising: providing a crucible, the shape of which matches the preset shape of the composite crystal; arranging a seed crystal for growing the crystal at one end of the crucible; arranging a matrix raw material and a doping raw material for growing the crystal in the crucible according to the step-by-step situation of the matrix crystal and the doping crystal in the composite crystal; placing the crucible horizontally, heating the crucible, so that the raw material in the crucible starts to melt from the end where the seed crystal is arranged, and the rest of the raw material remains in an unmelted state; and moving the crucible horizontally, so that the region where the raw material in the crucible is melted gradually moves from one end of the seed crystal to the other end until the crystal growth is completed. The method for preparing the composite crystal of the present invention has low cost, convenient observation, high crystal utilization, and can directly grow a complete and high-quality large-sized composite crystal.

The invention relates to a high-power dual-wavelength erbium-doped solid laser, and belongs to the technical field of laser. The high-power dual-wavelength erbium-doped solid laser comprises a pumping source, a pumping cavity, a diamond, a heat sink, a first resonant cavity and a second resonant cavity, the first resonant cavity comprises a first erbium-doped YAG slice crystal, and the second resonant cavity comprises a second erbium-doped YAG slice crystal. The first erbium-doped YAG sheet crystal is used for generating 1.64 [mu] m laser which oscillates back and forth in a back-and-forth light path provided by the first resonant cavity; and the second erbium-doped YAG sheet crystal is used for generating 2.94 [mu] m laser which oscillates back and forth in a back-and-forth light path provided by the second resonant cavity. According to the high-power dual-wavelength erbium-doped solid laser provided by the invention, synchronous output of 1.64 mu m and 2.94 mu m dual-wavelength laser is realized, the multifunctionality and medical adaptability of the laser are enhanced, and multi-type treatment requirements of soft tissues and hard tissues can be met at the same time.

A polystyrene-based chalcone including units of a 1-(2H-1,3-benzodioxol-5-yl)-3-[4-(dimethylamino)phenyl]-(2E)-propane-1-one and units of a 2-hydroxyethyl methacrylate. The units of the 1-(2H-1,3-benzodioxol-5-yl)-3-[4-(dimethylamino)phenyl]-(2E)-propane-1-one and the units of the 2-hydroxyethyl methacrylate are in a matrix of a polystyrene. A process for preparing the polystyrene-based chalcone and application as a laser medium with fine coating characteristics.