4532results about "Active medium material" patented technology

An apparatus generates femtosecond pulses from laser amplifiers by nonlinear frequency conversion. The implementation of nonlinear frequency-conversion allows the design of highly nonlinear amplifiers at a signal wavelength (SW), while still preserving a high-quality pulse at an approximately frequency-doubled wavelength (FDW). Nonlinear frequency-conversion also allows for limited wavelength tuning of the FDW. As an example, the output from a nonlinear fiber amplifier is frequency-converted. By controlling the polarization state in the nonlinear fiber amplifier and by operating in the soliton-supporting dispersion regime of the host glass, an efficient nonlinear pulse compression for the SW is obtained. The generated pulse width is optimized by utilizing soliton compression in the presence of the Raman-self-frequency shift in the nonlinear fiber amplifier at the SW. High-power pulses are obtained by employing fiber amplifiers with large core-diameters. The efficiency of the nonlinear fiber amplifier is optimized by using a double clad fiber (i.e., a fiber with a double-step refractive index profile) and by pumping light directly into the inner core of this fiber. Periodically poled LiNbO3 (PPLN) is used for efficient conversion of the SW to a FDW. The quality of the pulses at the FDW can further be improved by nonlinear frequency conversion of the compressed and Raman-shifted signal pulses at the SW. The use of Raman-shifting further increases the tuning range at the FDW. For applications in confocal microscopy, a special linear fiber amplifier is used.

Organic vertical-cavity surface-emitting lasers ("OVCSELs"), in which a thin layer of organic material is disposed between highly reflective mirrors to thereby form a vertical cavity within a stacked arrangement. The lasers of the present invention each comprise a first mirror layer; a layer of active organic material over the first mirror layer; and a second mirror layer over the layer of first active organic material. The active organic material lases when pumped to thereby produce laser light. The present invention provides for optical semiconductor lasers with desired properties such as narrow bandwidth emission, the minimal use of active organic materials, and the facilitation of wavelength tuning and electrical pumping.

There is provided a beam homogenizer which can unify the energy distribution of a linear laser beam in a longitudinal direction. In the beam homogenizer including cylindrical lens groups for dividing a beam, and a cylindrical lens and a cylindrical lens group for condensing the divided beams, the phases, in the longitudinal direction, of linear beams passing through individual cylindrical lenses of the cylindrical lens group for condensing the divided beams are shifted, and then, the beams are synthesized, so that the intensity of interference fringes of the linear beam on a surface to be irradiated is made uniform.

A laser light source device includes a pump light source which emits transverse-multimode light; a plurality of resonator mirrors which define a resonator, at least part of the resonator mirrors outputting light to the outside, where the output light having plural wavelengths; a laser medium arranged in the resonator, the laser medium being pumped with the transverse-multimode light emitted from the pump light source; and a wavelength conversion element arranged in the resonator, the wavelength conversion element being irradiated with a transverse-multimode line beam of fundamental wave obtained by oscillation at the laser medium and outputting a line beam of converted wave.

In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

A laser-based system for processing target material within a microscopic region without causing undesirable changes in electrical or physical characteristics of at least one material surrounding the target material, the system includes a seed laser, an optical amplifier, and a beam delivery system. The seed laser for generating a sequence of laser pulses having a first pre-determined wavelength. The optical amplifier for amplifying at least a portion of the sequence of pulses to obtain an amplified sequence of output pulses. The beam delivery system for delivering and focusing at least one pulse of the amplified sequence of pulses onto the target material. The at least one output pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond. The pulse duration being within a thermal processing range. The at least one focused output pulse having sufficient power density at a location within the target material to reduce the reflectivity of the target material and efficiently couple the focused output into the target material to remove the target material.

An optical spectroscopy apparatus determines the concentration of analyte in a specimen that utilizes a single radiation source which is hybrid laser comprising a semiconductor pump laser and small-cavity rare earth fiber laser where laser cavities of both lasers are butt coupled or otherwise optically coupled to form a plurality of laser cavities that produce a plurality of emission wavelengths, one which may be the pump laser emission wavelength at the output of the fiber laser thereby forming a multi-wavelength combined output where the wavelengths substantially match distinguishing spectral characteristic features along at least a portion of a characteristic optical spectrum of the analyte under examination. In lieu of complex data analysis of these wavelengths to determine values representing the concentration of the analyte in an examined specimen, the semiconductor pump laser or lasers are modulated as a plurality of tone frequencies, where at least a first of the modulation frequencies is below the maximum frequency response of the fiber laser so that the first modulation effectively modulates the pump emission wavelength and a first emission wavelength of the fiber laser in the hybrid laser combined output, and at least a second of modulation frequencies is above the maximum frequency response of the fiber laser so that the second modulation effectively modulates the pump emission wavelength but not the first emission wavelength of the fiber laser in the hybrid laser combined output. Further, one or more additional modulation frequencies may be applied to the pump laser which are intermediate of the first and second modulation frequencies where it is at least responsive to at least one further emission wavelength of the fiber laser and also provided in the hybrid laser combined output.

A modular ultrafast pulse laser system is constructed of individually pre-tested components manufactured as modules. The individual modules include an oscillator, pre-amplifier and power amplifier stages, a non-linear amplifier, and a stretcher and compressor. The individual modules can typically be connected by means of simple fiber splices.

Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

The present relates in general to upconversion luminescence ("UCL") materials and methods of making and using same and more particularly, but not meant to be limiting, to Mn2+ doped semiconductor nanoparticles for use as UCL materials. The present invention also relates in general to upconversion luminescence including two-photon absorption upconversion, and potential applications using UCL materials, including light emitting diodes, upconversion lasers, infrared detectors, chemical sensors, temperature sensors and biological labels, all of which incorporate a UCL material.

Three dimensional optical structures are described that can have various integrations between optical devices within and between layers of the optical structure. Optical turning elements can provide optical pathways between layers of optical devices. Methods are described that provide for great versatility on contouring optical materials throughout the optical structure. Various new optical devices are enabled by the improved optical processing approaches.

The present invention provides new compositions containing colloidal nanocrystals with high photoluminescence quantum yields, new synthetic methods for the preparation of highly luminescent colloidal nanocrystals, as well as methods to control the photoluminescent properties of colloidal nanocrystals. The new synthetic methods disclosed herein allow photoemission brightness (quantum yield) to be correlated with certain adjustable nanocrystal growth parameters associated with a given synthetic scheme.

A display apparatus for producing colored pixelated light includes a backlight unit for providing a pump-beam light. The apparatus also includes a microcavity light-producing array responsive to pump-beam light and having pixels wherein each pixel including a transparent substrate, a bottom dielectric stack reflective to light over a predetermined range of wavelengths, an active region responsive to pump-beam light for producing display light, and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. The apparatus further includes a light shutter for permitting selected display light from the microcavity light-producing array to pass therethrough, a polarizing layer disposed between the microcavity light-producing array and the light shutter, and a beam expander disposed over the light shutter for increasing the angular cone of view of the display light.

There is provided an optical system for reducing faint interference observed when laser annealing is performed to a semiconductor film. The faint interference conventionally observed can be reduced by irradiating the semiconductor film with a laser beam by the use of an optical system using a mirror of the present invention. The optical system for transforming the shape of the laser beam on an irradiation surface into a linear or rectangular shape is used. The optical system may include an optical system serving to convert the laser beam into a parallel light with respect to a traveling direction of the laser beam. When the laser beam having passed through the optical system is irradiated to the semiconductor film through the mirror of the present invention, the conventionally observed faint interference can be reduced. Besides, the optical system which has been difficult to adjust can be simplified.

Disclosed is an amplifying optical fiber having a central core and an optical cladding surrounding the central core. The central core is based on a silica matrix that includes nanoparticles, which are composed of a matrix material that includes doping ions of at least one rare earth element. The amplifying optical fiber can be employed, for example, in an optical amplifier and an optical laser.

A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques applied to a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography.

An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.

The invention is directed to a method and an arrangement for the efficient generation of intensive short-wavelength radiation based on a plasma. The object of the invention is to find a novel possibility for the generation of intensive short-wavelength electromagnetic radiation, particularly EUV radiation, which permits the excitation of a radiation-emitting plasma with economical gas lasers (preferably CO₂ lasers). This object is met, according to the invention, in that a first prepulse for reducing the target density is followed by at least a second prepulse which generates free electrons in the target by multiphoton ionization after a virtually complete recombination of free electrons generated by the first prepulse has taken place due to a long-lasting expansion of the target for reducing the target density, and the main pulse of a gas laser with a low critical electron density typical for its wavelength is directed to the target immediately after the second prepulse when the second prepulse in the expanded target, whose ion density corresponds to the critical electron density of the gas laser, has created enough free electrons so that an efficient avalanche ionization is triggered by the main pulse of the gas laser until reaching the ionization level for the desired radiation emission of the plasma.